[go: up one dir, main page]

WO1999060673A2 - Laser dope - Google Patents

Laser dope Download PDF

Info

Publication number
WO1999060673A2
WO1999060673A2 PCT/US1999/010513 US9910513W WO9960673A2 WO 1999060673 A2 WO1999060673 A2 WO 1999060673A2 US 9910513 W US9910513 W US 9910513W WO 9960673 A2 WO9960673 A2 WO 9960673A2
Authority
WO
WIPO (PCT)
Prior art keywords
laser
zone
crystal
pumping
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/010513
Other languages
English (en)
Other versions
WO1999060673A3 (fr
Inventor
Yusong Yin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photonics Industries International Inc
Original Assignee
Photonics Industries International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photonics Industries International Inc filed Critical Photonics Industries International Inc
Publication of WO1999060673A2 publication Critical patent/WO1999060673A2/fr
Publication of WO1999060673A3 publication Critical patent/WO1999060673A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0407—Liquid cooling, e.g. by water
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0612—Non-homogeneous structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0816—Configuration of resonator having 4 reflectors, e.g. Z-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping

Definitions

  • the field of the invention relates to end pumped lasers.
  • an end pumped laser the radiation from a single laser, a laser diode or a laser array is focussed on the end of a laser rod.
  • Prior art end pumped lasers have been developed using doped crystals such as NdrYAG crystals which can be end pumped from both ends.
  • thermal distortion and crystal fracture have been problems which result in limiting the pumping power from the pumping lasers.
  • an end pumped laser is provided.
  • the device includes at least one pumping laser or laser array in optical communication with one end of a lasing material.
  • a second pumping laser or second laser array in optical communication with the other end of the lasing material is also provided so the laser can be pumped from both ends.
  • the lasing material is composed of a host material doped with a laser active ion.
  • the host material is a crystal or glass.
  • the lasing material is preferably formed into a rod desirably a rectangular or cylindrical rod.
  • the lasing material has a preselected lower doping level at the end or ends adjacent to the pumping laser. The doping level increased as the distance from the pump lasers is increased.
  • the lasing material has at least two zones having different levels of doped laser active ion in the two zones.
  • the first zone has a preselected level of doped laser active ions.
  • the second zone located between the first zone and first pumping laser has a lower doped level of laser active ions than the first zone. Desirably the level of doping in the second zone is from 5% to 70% of the level of doping in the first zone.
  • the lasing material preferably includes a third zone located between the first zone and the second pumping laser.
  • the third zone has a lower level of doped laser active ions than the first zone. Desirably the level of doping in the third zone is from 5% to 70% of the level of doping in the first zone.
  • the lasing material has a plurality of zones of doped laser active ions.
  • the doping level within the lasing material increases from zone to zone as the distance of the zone from the pumping laser increases.
  • the lasing material is a unitary crystal rod formed by diffusion bonding two or more separate crystals of different doping levels to form a laser crystal according to the invention eg. a cylindrical or rectangular rod, having two or more zones.
  • the lasing material is composed of two or more separate crystals of preselected doping levels.
  • the crystals are mounted in close proximity to one another on a base and aligned on the laser's optic axis so the EMR propagating from one crystal is directed across the adjacent crystal.
  • a multi-zone lasing material will be formed with two or more zones and desirable 3 to 5 zones or more having preselected doping levels in each zone.
  • the doping levels increase as the distance of crystal from a pumping laser increases .
  • a lasing material desirably a laser rod having multiple doped zones of laser active ions is pumped by a pumping laser preferable pumping lasers located adjacent to the both ends of the laser rod.
  • more of the energy from the pumping laser will pass to the interior zone of the laser where additional laser active ions will be excited than in lasers with uniform high doping levels.
  • the ends of the laser rod therefore will not be heated to the same degree as if the high level of the doping of the first zone was extended to the zone adjacent to the ends of the rod adjacent to pumping lasers.
  • the lasing material is subject to reduced thermal stress and will be less likely to crack when subjected to high power pumping lasers. Desirably there will be a more uniform absorption rate of energy across the crystal.
  • Fig. 1 is a diagrammatic view of an end pumped laser according to the invention.
  • Fig. 2 is a diagrammatic view of an alternative embodiment of the laser according to the invention.
  • Fig. 3 is a diagrammatic view of a laser rod according to the invention.
  • Fig. 4 is a diagrammatic view of an alternative embodiment of a laser rod according to the invention having a heat exchanger .
  • Fig. 5 is graph showing the absorption rate of the crystal according to the invention.
  • Fig. 6 is partial perspective view of a water cooled laser housing according to the invention.
  • an end pumped laser having an improved resistance to laser crystal fracture at high power output and more uniform thermal load along the lasing material.
  • the end pumped laser is pumped from at least one end and preferably from both ends.
  • a pumping laser desirably a diode or diode array, or optionally other pump source preferably a NdrYLF or NdrYAG pump laser is provided on at least one and preferably on each end of the end pumped laser.
  • the pumped laser includes a lasing material having at least two zones and preferably three zones or more. Desirably a laser crystal, optionally a crystal rod is used as the lasing material. Optionally a glass laser rod can be used.
  • Each zone has a preselected amount of doping in the lasing material.
  • the pumped laser has at least two zones when one end only is pumped and at least three zone when both ends are pumped.
  • the lasing material will have two zones of differing doping levels.
  • the first zone has a high doping level of lasing ions in the host material as is typical for the type of host material.
  • the crystal host materials is YLF, YAG or YVO, .
  • the doping ions are Nd, Er or Ho.
  • other lasing material can be employed for example Ti: Sapphire, Cr : LiSAF wherein the doping ions are Ti and Cr .
  • the doping level for zone 1 for NdrYLF crystals is about .8% to about 1.8% (Atomic %) .
  • a second zone having a lower doping level is located between the first zone and the pumping laser. The doping level in the second zone is lower than the that of the first zone.
  • the second zone desirably has a doping level of 5% to 70% of the first zone and preferably from 30% to 60% of that of the first zone.
  • a third zone is provided between the first zone and the second pumping laser.
  • the third zone has a doping level of from 5% to 70% and preferable from 30% to 60% of the doping level in the first zone.
  • a plurality of zones in the lasing material can be provided.
  • the zone of the lasing material nearest a pumping laser has the lowest doping level.
  • the zone of the lasing material furthest from a pumping laser has the highest doping level.
  • the central zone, zone 1 has the highest doping level.
  • Zones 4 and zone 5 will have a lower doping level 5% to 70% preferably 30% to 60% of that of zone 1 and are located on either side of zone 1.
  • Zones 2 and zone 3 which are located nearest to where the energy from the pumping lasers enter the lasing material will have the lowest doping level, 5% to 70% preferably 30% to 60% of the level of zone 4 and zone 5.
  • a Nd: YLF crystal has a central zone 1 with a Nd doping of 1.5% (Atomic %) .
  • a second zone Z2 located adjacent to the first pumping laser, having Nd doping level of .375% and a third zone adjacent to the second pumping laser having a doping level of .375% are provided.
  • a fourth zone Z4 with has a doping level of .75% and is located between the second zone and first zone.
  • a optional fifth zone Z5 having a Nd doping level of .75% is located between the third zone and the first zone.
  • a crystal that has a multiplicity of zones of ascending doping levels from the end of the crystal adjacent a pumping laser is used.
  • the doping level is at a minimum at either end and gradually increases to a maximum near the center of the rod.
  • a unitary crystal is formed by diffusion bonding two or more separate crystal of different doping levels to form a laser crystal according to the invention eg. a rod either rectangular or cylindrical having two or more zones.
  • the lasing material is composed of two or more separate crystals of preselected doping levels.
  • the crystals are mounted in close proximity to one another on a base in the laser's optical cavity.
  • the crystals are aligned on the laser's optic axis so that the EMR propagating from one crystal is directed across the adjacent crystal.
  • a multi-zone lasing material will be formed with two or more zones and desirably 3 to 5 zones or more having preselected doping levels in each zone.
  • a pumped laser according to the invention having a lasing material desirably crystal or glass, preferable crystal rod LR is provided.
  • the lasing material desirably has an increasing level of doping as the distance from an end pumped laser increases.
  • multiple doped zones are provided in lasing rod LR.
  • three zones, Zl, Z2 and Z3 are provided.
  • five or more zones can be provided.
  • Zl is centrally located in the interior of the lasing material.
  • Z2 and Z3 are located on the left and right ends of the lasing material.
  • the lasing material LR is a crystal rod selected from a number of laser crystal host materials, for example, YLF, YAG and YV0 4 .
  • the crystal can be doped with a number of laser active ions such as Nd (Neodymium) , Er (Erbium) and Ho (Holmium) , preferably Nd.
  • laser active ions such as Nd, Er, Ho, Yb (Ytterbium) , and Tm (Thulium) are provided.
  • other lasing materials can be employed for example Ti: Sapphire, Cr:LiSAF crystals wherein the doping ions are Ti (Titanium) and Cr (Chromium) .
  • NdrYAG, NdrYLF or NdrYV04 crystals are used.
  • a pumping laser is provided to supply power to the lasing material as shown in Fig. 2.
  • pumping lasers are provided at either end of the lasing material LR preferably laser diodes LD1 and LD2.
  • the laser diodes have a power output of greater than 16 watts each and preferably 20 watts or higher and desirably 20 to 60 watts. Most preferably the power output of LD1 and LD2 is 20 to 30 watts.
  • Focussing optics preferably lens LI and lens L2 are provided between pumping laser LD1 and LD2 and lasing material LR to focus the beam propagating from pumping laser LD1 and LD2 on lasing material LR.
  • a laser cavity is formed around LR by mirrors desirably four mirrors Ml, M2 , M3 and M4.
  • Mirror Ml is located between LI and LR along the path of the pumping beam from LDl.
  • Mirror Ml is coated to highly transmit the wavelength of the beam propagating from LDl and highly reflect the beam propagating from LR.
  • LR When the pumping beam propagating from LDl and LD2 has a wavelength of about 806 nm and LR is a NdrYLF laser rod, LR will lases at about 1053nm or 1047nm depending on designer choice.
  • Mirror Ml is coated to highly transmit at a wavelength of about 806 nm ( ⁇ 15nm) and highly reflect at a wavelength of 1053 nm ( ⁇ 15nm) .
  • Mirror M2 is coated to transmit the wavelength of the beam propagating from LD2 and reflect the beam propagating from LR.
  • M2 is similar to Ml and is coated to highly transmit at about 806 nm and highly reflective at about 1053 nm.
  • Mirror M3 which is highly reflect at 1053 nm is located in optical communication with Mirror M2 along the optic axis of the pumped laser.
  • An optional Q-Switch QS and optional polarizer PL are provided between M3 and M2 along the optic axis.
  • Mirror M4 is an output coupler which is partially transmissive and partially reflective at 1053 nm desirably from about 5% to 30% preferably about 12% transmissive and about 70% to 95% preferably about 88% reflective.
  • Laser rod LR preferably a NdrYLF laser rod desirably includes three zones Zl, Z2 and Z3 having predetermined doping levels. Central Zone Zl has the highest doping level.
  • Zones 2 and 3 have a lower doping level of 5% to 70% of the doping level of the zone 1 and preferably 30% to 60% of the doping level of Zone 1 for example for a NdrYLF rod approximately .5% Nd doping for a 1.1 doping level in zone 1.
  • a pumping laser beam propagates from laser diodes LDl and LD2 respectively.
  • the pumping beam propagating from LDl having a wavelength of about 806 nm is directed through focussing optics LI and is transmitted through Mirror Ml to incident on lasing material LR at zone Z2.
  • the beam propagating from LD2 is focussed by focussing optics L2 through mirror M2 which transmits beams having a wavelength of about 806.
  • the focussed beam incidents on lasing material LR at zone Z3.
  • Zones Z2 and Z3 are first excited and absorb a portion of the energy of the pumping beams prior to their incedenting on Zone Zl.
  • LR then lases at a wavelength of about 1053nm.
  • the beam propagating from LR is reflected by M2 to M3 where it is reflected back to M2.
  • the beam is reflected for a second pass through the lasing material LR to be amplified and then reflected by Mirror Ml to mirror M4.
  • Mirror 4 is output coupler which partially transmits the beam outside the cavity and reflects the untransmitted beam back to Ml for amplification through another pass through the lasing material LR.
  • An optional Q- switch QS and polarizer PL can be provided in the cavity adjacent desirably a mirror M3.
  • LR is a NdrYAG, NdrYLF or NdrYV04
  • pumping laser LDl and LD2 desirably have a power output of greater than 16 watts and most preferably 20 watts or higher and desirably 20 to 60 watts.
  • LDl and LD2 supply of 30 watts at each end of the rod for a total input of 60 watts.
  • the resulting output of the pumped laser from the laser cavity at M4 has a power of 15 to 25 watts at TMoo mode.
  • Zone 2 and zone 3 absorb some of the energy prior to the pumping laser beam reaching zone 1 which has a higher level of doping. As a result, the thermal stress in zone 2 and 3 is lower than would be encountered if the zones 2 and 3 were doped to the same degree as zone 1.
  • Fig. 5 shows that for a pumped laser according to the invention a more uniform energy absorption is achieved across the length of the laser rod than where the laser rod has a uniform doping level of the prior art.
  • Fig. 2 shows another embodiment of the invention.
  • Fig. 2 shows an end pumped laser pumped from just one end.
  • Pump laser LP is desirably an NdrYAG or Nd:YLF pumping laser desirably Nd:YLF.
  • the pumping laser beam has a wavelength of about 527 nm.
  • the beam propagating from LP is directed across focussing optics, lens L3 through Mirror M5 across lasing material LR1 which is desirably a Ti: Sapphire laser rod having two zones Zll and Z12. Zone Zll has a higher doping level than zone Z12.
  • the Ti doping in the Ti: Sapphire laser LR1 in zone Z12 is 30% to 60% percent of the doping level in Zll.
  • the doping level in Zll is approximately 0.1% (by atomic weight) and the doping level of Z12 is for example approximately .04%.
  • the optical cavity is defined by mirrors M5 and M6.
  • Laser rod LR1 is located between mirror M5 and M6.
  • Mirror M6 is an output coupler which is approximately 15% transmissive at 800 nm and 85% reflective at 800 nm.
  • Mirror M5 is highly reflective at about 800 nm and highly transmissive at about 527 nm which is the wavelength of the Nd:YLF second harmonic pumping laser shown herein.
  • Fig. 4 shows another embodiment of a material according to the invention which includes a heat exchanger to cool the laser rod.
  • a laser rod LR2 is provided, having a first zone Zl of a high doping level, for example an Nd:YLF crystal having a 1.1% atomic percent doping. Zones Z2 and Z3 are provided having a lower doping, from 5% to 70% of Zl and preferably 30% to 60% of the doping level of Zl .
  • the laser rod is formed by diffusion bonding three laser crystals having preselected doping levels and two undoped crystals to form a unitary crystal rod having undoped zone Z0 at either end.
  • the rod LR2 includes a high doped zone Zl in the middle and two low doped zones Z2 and Z3 between the high doped zone Zl and undoped zones Z0.
  • the two undoped ends Z0 provide a convenient mounting platform for the heat exchanger, desirably a direct contact liquid cooling, HE.
  • Fig. 5 is a graphically representation of the absorption rate for a crystal of the prior art and a crystal according the invention plotted against the distance along the crystal. It can be seen that the absorption rate of the three zone crystal according to the invention is more uniform across the length of the crystal. As a result a more uniform thermal load can be expected along the lasing material and improved resistance of the lasing material to laser rod fracture is expected.
  • a water cooled crystal housing is provided.
  • a lasing material is formed by mounting two or more separate crystals in close proximity to one another. As shown in Fig. 6 three crystals of varying doping levels are mounted in a water cooled copper mounting base. Crystals CR1 , CR2 and CR3 are provided.
  • the crystals can be provided by any suitable crystal material as described above for example an Nd:YAG or NdrYLF crystals.
  • the crystals are positioned on a mounting base preferably a copper mounting base. Desirably releasable thermal adhesive is applied to the base in the position in which the crystals are to be placed to releasable secure the crystal in their desired location.
  • the crystals are mounted closely adjoining one another with a spacing of preferably less than a millimeter.
  • the crystals CR1 has the highest doping level with CR2 and CR3 having a doping level from 5% to 70% of the doping level CR1 preferably 30% to 60%.
  • the releasable thermal adhesive serves several purposes. It secures the crystal in their desired position. It prevents the crystals from dislodging in the copper container and thus being damaged. It allows the crystal to be realigned if necessary. It provides a thermal conductivity between the copper base and the crystals. Water cooling channels are provided in the copper base to dissipate heat from the crystals.
  • a water cooled crystal housing is provided.
  • the crystal housing includes a top cover 10 a left base side 12 and a right base side 14.
  • a three piece lasing crystal is provided having a central crystal CR1 which has the highest doping level and left crystal CR3 and right crystal CR2 which are in alignment with central CR1.
  • the doping level in CR2 and CR3 is from 5% to 70% of the doping level of CR1.
  • Water cooling channels are provided through the housing.
  • Water inlet 18 is provided for the entry of the water through channels in the housing.
  • Water outlet 20 are provided for the water to exit after having cooled the crystal.
  • the left base side and right base side are held together by mounting screws not shown which are inserted through mounting holes 22 and 24.
  • the crystal is laid on the assembly left and right base sides which have been pre-coated with a releasable adhesive at the points where the crystal is contacted by the base so that the crystal is held in the appropriate position.
  • Mounting holes 26 are provided in the top cover for alignment with mounting holes 28 in the left and right said base so that when assembled the crystal housing can be secured together by mounting screws not shown.
  • the entire assembly is mounted to a base plate (not shown) by mounting screws through mounting holes 30 and 32.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un laser à pompage longitudinal comportant un milieu actif à base de cristal ou de verre. On utilise au moins un laser de pompage en communication optique avec une extrémité du milieu actif pour pomper le laser. Le milieu actif est composé d'un matériau siège de l'effet laser, qui est dopé à l'aide d'un ion à activité laser. Le milieu actif comporte une première zone qui se caractérise par un niveau prédéfini d'ions à activité laser. Le milieu actif comporte une deuxième zone, située entre la première zone et le laser de pompage. Cette deuxième zone se caractérise par un niveau d'ions à activité laser inférieur à celui de la première zone.
PCT/US1999/010513 1998-05-15 1999-05-12 Laser dope Ceased WO1999060673A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8032898A 1998-05-15 1998-05-15
US09/080,328 1998-05-15

Publications (2)

Publication Number Publication Date
WO1999060673A2 true WO1999060673A2 (fr) 1999-11-25
WO1999060673A3 WO1999060673A3 (fr) 2000-02-24

Family

ID=22156699

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/010513 Ceased WO1999060673A2 (fr) 1998-05-15 1999-05-12 Laser dope

Country Status (1)

Country Link
WO (1) WO1999060673A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10241984A1 (de) * 2002-09-11 2004-03-25 Tui Laser Ag Optisch gepumpter Festkörperlaser
EP1717914A1 (fr) * 2005-04-28 2006-11-02 Compagnie Industrielle des Lasers Cilas Elément actif pour source laser et source laser comportant un tel élément actif
FR2885267A1 (fr) * 2005-04-28 2006-11-03 Cie Ind Des Lasers Cilas Sa Element actif pour source laser et source laser comportant un tel element actif.
WO2017205851A1 (fr) * 2016-05-26 2017-11-30 Compound Photonics Ltd Systèmes laser à solide

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563899A (en) * 1988-08-30 1996-10-08 Meissner; Helmuth E. Composite solid state lasers of improved efficiency and beam quality
US5287373A (en) * 1992-08-17 1994-02-15 Alliedsignal Inc. Gradient doped solid state laser gain media
US5321711A (en) * 1992-08-17 1994-06-14 Alliedsignal Inc. Segmented solid state laser gain media with gradient doping level
US5651020A (en) * 1994-02-04 1997-07-22 Spectra-Physics Lasers, Inc. Confocal-to-concentric diode pumped laser
US5675595A (en) * 1996-01-29 1997-10-07 Science And Technology Corporation Composite multiple wavelength laser material and multiple wavelength laser for use therewith

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10241984A1 (de) * 2002-09-11 2004-03-25 Tui Laser Ag Optisch gepumpter Festkörperlaser
WO2004027943A1 (fr) * 2002-09-11 2004-04-01 Tui Laser Ag Laser a solide a pompage optique
EP1717914A1 (fr) * 2005-04-28 2006-11-02 Compagnie Industrielle des Lasers Cilas Elément actif pour source laser et source laser comportant un tel élément actif
FR2885266A1 (fr) * 2005-04-28 2006-11-03 Cie Ind Des Lasers Cilas Sa Element actif pour source laser comportant un tel element actif
FR2885267A1 (fr) * 2005-04-28 2006-11-03 Cie Ind Des Lasers Cilas Sa Element actif pour source laser et source laser comportant un tel element actif.
WO2017205851A1 (fr) * 2016-05-26 2017-11-30 Compound Photonics Ltd Systèmes laser à solide

Also Published As

Publication number Publication date
WO1999060673A3 (fr) 2000-02-24

Similar Documents

Publication Publication Date Title
Dominic et al. 110 W fibre laser
EP1160940B1 (fr) Amplificateur optique comprenant un matériaux de gain en plaque zig-zag pompé longitudinalement
US6134258A (en) Transverse-pumped sLAB laser/amplifier
EP0973236B1 (fr) Matériau actif pour laser en plaque "zig-zag" pompée à une extrémité
EP0953220B1 (fr) Puits thermique optiquement transparent pour le refroidissement d'un element d'un laser dans le sens de la longueur
US5485482A (en) Method for design and construction of efficient, fundamental transverse mode selected, diode pumped, solid state lasers
USRE43421E1 (en) Single-mode operation and frequency conversions for solid-state lasers
US20020105997A1 (en) Multipass geometry and constructions for diode-pumped solid-state lasers and fiber lasers, and for optical amplifier and detector
US5761233A (en) Monolithic pump cavity and method
US20030138021A1 (en) Diode-pumped solid-state thin slab laser
EP0742963B1 (fr) Laser pompe a diode dont le cristal presente une lentille thermique puissante
US5181223A (en) High-efficiency mode-matched transversely-pumped solid state laser amplifier
US5623510A (en) Tunable, diode side-pumped Er: YAG laser
US6667999B2 (en) Cooling of high power laser systems
US7388895B2 (en) Corner-pumping method and gain module for high power slab laser
JP2004527101A (ja) ファイバレーザ
US7369582B2 (en) High-power fiber laser amplifier and fiber laser oscillator
KR101857751B1 (ko) 슬랩 고체 레이저 증폭장치
US20020181534A1 (en) Diode-pumped slab solid-state laser
WO1999060673A2 (fr) Laser dope
WO2003043144A2 (fr) Laser solide a plaque mince a pompe par diode
JPH11284257A (ja) 半導体レーザ励起固体レーザ装置
JP3967754B2 (ja) 側面ポンピングレーザー
Golla et al. High power operation of Nd: YAG rod lasers pumped by fiber-coupled diode lasers
JP5007799B2 (ja) ３次元ディスクレーザ

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CA JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): CA JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase