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WO1999054993A1 - Amplificateur - Google Patents

Amplificateur Download PDF

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Publication number
WO1999054993A1
WO1999054993A1 PCT/CN1998/000063 CN9800063W WO9954993A1 WO 1999054993 A1 WO1999054993 A1 WO 1999054993A1 CN 9800063 W CN9800063 W CN 9800063W WO 9954993 A1 WO9954993 A1 WO 9954993A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
output
stage
transformer
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN1998/000063
Other languages
English (en)
Chinese (zh)
Inventor
Shaofu Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to AU69173/98A priority Critical patent/AU6917398A/en
Priority to PCT/CN1998/000063 priority patent/WO1999054993A1/fr
Publication of WO1999054993A1 publication Critical patent/WO1999054993A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3061—Bridge type, i.e. two complementary controlled SEPP output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices

Definitions

  • the present invention relates to an amplifier, and more particularly, to an amplifier composed of a coupled boost transformer and a symmetrical source complementary source follower.
  • An object of the present invention is to provide an amplifier that can greatly simplify a circuit, reduce manufacturing costs, and has perfect sound quality and excellent electrical performance.
  • the amplifier according to the present invention comprises: as input stage and output stage of the amplifier, two symmetrical power source complementary source followers using a depletion type field effect tube and a step-up transformer, which are characterized as:
  • the two gates of the depletion FET are directly connected to the input signal source at the same time, and only connected to the input signal source.
  • the two gates of the depletion-type FET are directly connected to the secondary of the step-up transformer at the same time, and are only connected to the secondary of the step-up transformer.
  • a depletion type FET is used.
  • the amplifier input and output stage FETs have no biased gates, which eliminates the influence of the power supply circuit on the gates of the FETs and improves the sound quality.
  • FIG. 1 is a detailed circuit diagram of the first embodiment of the present invention.
  • FIG 2 is an equivalent circuit diagram of a second embodiment of the present invention.
  • Figure 3 is an equivalent circuit diagram of the third embodiment of the present invention.
  • Figure 4 is an equivalent circuit diagram of a fourth embodiment of the present invention.
  • FIG. 5 a, 5b is an equivalent circuit diagram of a fifth embodiment of the present invention.
  • FIG. 6 is an equivalent circuit diagram of a sixth embodiment of the present invention.
  • FIG. I is an equivalent circuit diagram of a seventh embodiment of the present invention.
  • Ri and R2 are input resistances, where R2 is grounded.
  • the input stage 1 uses a symmetrical source complementary source follower, of which T and T 2 are depletion field effect transistors.
  • T and T 2 are depletion field effect transistors.
  • the role of the audio transformer 2 is to couple the boost.
  • the boost (transformation) ratio of the transformer determines the voltage gain of the entire amplifier. Boosting ratio is usually 2 - 40 to choose between.
  • Audio transformers 2 should use high-quality products (such as the transformer described in the utility model patent with the patent number 97200573.0 and the "new-type iron-core structure transformer").
  • the secondary winding of the audio transformer 2 is directly connected to the output stage 3.
  • R5 can adjust the Q value of the transformer.
  • the output stage 3 also uses a symmetrical source complementary source follower. Among them, T 3 and T 4 use depletion field effect transistors.
  • R9 and R10 are the midpoint potential adjustment resistors of the output stage. By adjusting resistors R9 and R10 accordingly, the static midpoint potential of the output stage is 0V, which can be directly connected to the external load 4.
  • RL is the load resistance, and R6, R7, R8, and R11 are decoupling resistors.
  • the input impedance of the above amplifier is relatively high (up to 200K), so the input end can be directly connected to a high-quality signal source such as a laser record player or a preamplifier.
  • the FETs in the input stage and output stage can be connected in parallel with multiple tubes to increase the current output capability.
  • the gate bias resistor is eliminated. Therefore, the influence of the gate bias circuit on the useful signal is eliminated, thereby improving fidelity and simplifying the circuit.
  • FIG. 2 An equivalent circuit diagram of the second embodiment of the present invention is shown in FIG. 2 .
  • the input stage and output stage in the figure are the same as the first embodiment described above, except that two coupled boost transformers are used.
  • the input ends of these two transformers are connected in parallel and the output ends are connected in series to improve Output voltage amplitude.
  • the equivalent circuit diagram of the third embodiment of the present invention is shown in Figure 3.
  • the input stage and coupling transformer in the figure are the same as the first embodiment described above, except that the output stage continuously uses two symmetrical power supplies to complement each other.
  • the source follower, and the latter symmetrical source complementary source follower can use a high-power enhanced field effect tube to further improve the current output capability.
  • FIG. 4 An equivalent circuit diagram of the fourth embodiment of the present invention is shown in FIG. 4 .
  • the coupling transformer in the figure uses two transformers. The primary of these two transformers are connected in parallel, and the secondary of one transformer is Inverting output. In the output stage, two identical continuous two-stage connected symmetrical source complementary source followers with high-power enhanced field effect tubes are used as the bridge output to increase the output power.
  • the equivalent circuit diagrams of the fifth embodiment of the present invention are shown in Figs. 5a and 5b.
  • the amplifier of the present invention can also be used in two or more stages. When the two stages are used in combination, as shown in FIG. 5a, the amplifier of the present invention can be composed of three symmetrical source complementary source followers and two transformers, which has the advantage that the circuit is relatively simple. Further, when the two may be used in conjunction with FIG. 5 b as shown in direct conjunction, the advantage that the current supply capability can be improved to promote the intermediate stage.
  • FIG. 6 An equivalent circuit diagram of a sixth embodiment of the present invention is shown in FIG. 6.
  • a field effect transistor may adopt two or more tubes in parallel according to the requirements of use (as shown in the figure). n tubes in parallel) to improve current output capability.
  • FIG. 7 An equivalent circuit diagram of a seventh embodiment of the present invention is shown in Figure 7.
  • the primary and secondary coils of the above-mentioned transformers have intermediate ground taps, and the input stage and the output stage of the amplifier are respectively connected to the same two symmetrical power sources described above.
  • Complementary source follower The output ends of the two symmetric power complementary source followers in the input stage are connected to both ends of the transformer primary line ⁇ , and the inputs of the two symmetric power complementary source followers in the output stage are respectively connected to the transformer secondary The two ends of the coil are connected to make the amplifier perform balanced input and balanced output.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un amplificateur comprenant un transformateur couplé et des montages à source complémentaires connectés à la borne d'entrée et de sortie du transformateur et à la puissance symétrique. L'étage d'entrée et sortie de l'amplificateur utilise un transistor à effet de champ MOS, omission faite de la résistance de polarisation de grille. On peut donc annuler les effets de la résistante de polarisation de grille sur le signal en vue d'une amélioration de la haute fidélité et d'une simplification du circuit. L'amplificateur est un circuit simple, performant, présente un bas coût et une stabilité opérationnelle. Par ailleurs, il peut trouver une application dans le secteur des HI-FI et d'autres produits électroacoustiques.
PCT/CN1998/000063 1998-04-17 1998-04-17 Amplificateur Ceased WO1999054993A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU69173/98A AU6917398A (en) 1998-04-17 1998-04-17 Amplifier
PCT/CN1998/000063 WO1999054993A1 (fr) 1998-04-17 1998-04-17 Amplificateur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN1998/000063 WO1999054993A1 (fr) 1998-04-17 1998-04-17 Amplificateur

Publications (1)

Publication Number Publication Date
WO1999054993A1 true WO1999054993A1 (fr) 1999-10-28

Family

ID=4575048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN1998/000063 Ceased WO1999054993A1 (fr) 1998-04-17 1998-04-17 Amplificateur

Country Status (2)

Country Link
AU (1) AU6917398A (fr)
WO (1) WO1999054993A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140976A (en) * 1977-09-22 1979-02-20 David Wartofsky Thermally stable push-pull amplifier
US4159450A (en) * 1978-05-22 1979-06-26 Rca Corporation Complementary-FET driver circuitry for push-pull class B transistor amplifiers
US4194165A (en) * 1978-06-28 1980-03-18 Skulski Peter J Miniature guitar amplifier
CN2096845U (zh) * 1991-07-01 1992-02-19 胡秋野 超线性晶体管音频功率放大器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140976A (en) * 1977-09-22 1979-02-20 David Wartofsky Thermally stable push-pull amplifier
US4159450A (en) * 1978-05-22 1979-06-26 Rca Corporation Complementary-FET driver circuitry for push-pull class B transistor amplifiers
US4194165A (en) * 1978-06-28 1980-03-18 Skulski Peter J Miniature guitar amplifier
CN2096845U (zh) * 1991-07-01 1992-02-19 胡秋野 超线性晶体管音频功率放大器

Also Published As

Publication number Publication date
AU6917398A (en) 1999-11-08

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