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WO1999042892A1 - Reflecteur omnidirectionnel a cristal photonique - Google Patents

Reflecteur omnidirectionnel a cristal photonique Download PDF

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Publication number
WO1999042892A1
WO1999042892A1 PCT/US1999/003590 US9903590W WO9942892A1 WO 1999042892 A1 WO1999042892 A1 WO 1999042892A1 US 9903590 W US9903590 W US 9903590W WO 9942892 A1 WO9942892 A1 WO 9942892A1
Authority
WO
WIPO (PCT)
Prior art keywords
range
frequencies
reflector
photonic band
electromagnetic energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/003590
Other languages
English (en)
Other versions
WO1999042892A9 (fr
Inventor
John D. Joannopoulos
Shanhui Fan
Joshua N. Winn
Yoel Fink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Priority to DE69923292T priority Critical patent/DE69923292T2/de
Priority to CA002320257A priority patent/CA2320257C/fr
Priority to JP2000532769A priority patent/JP3654836B2/ja
Priority to EP99909516A priority patent/EP1057072B1/fr
Publication of WO1999042892A1 publication Critical patent/WO1999042892A1/fr
Publication of WO1999042892A9 publication Critical patent/WO1999042892A9/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like

Definitions

  • the invention relates to the field of photonic crystals, and in particular to a dielectric
  • electromagnetic energy e.g., light
  • electromagnetic energy e.g., light
  • a photonic crystal can be a perfect mirror for light from any direction, with any polarization, within a specified frequency range.
  • a photonic crystal can be a perfect mirror for light from any direction, with any polarization, within a specified frequency range.
  • the photonic crystal exhibit a complete three-dimensional photonic band-gap, i.e., a
  • crystal structure such as multi-layer films, that can exhibit complete reflection of radiation in a
  • the invention provides a reflector, a of producing same and a method of creating high omnidirectional reflection for a predetermined range of frequencies of incident
  • the reflector includes a structure with a surface and a refractive index variation along the direction perpendicular to the surface while remaining nearly uniform along the surface.
  • the structure is configured such that i) a range of frequencies exists defining a photonic band gap for electromagnetic energy
  • the reflector is configured as a photonic crystal.
  • FIG. 1 is a schematic block diagram of an exemplary embodiment of a high omnidirectional reflector in accordance with the invention
  • FIG. 2 is a graph of the first three bands of an exemplary multilayer film quarter-wave
  • FIG. 3 is a graph showing the projected band structure for a quarter-wave stack with
  • FIG. 4 is a graph showing the projected band structure for a quarter-wave stack with
  • FIG. 6 is a contour plot of the range-midrange ratio for the frequency range of high
  • FIG. 1 is a schematic block diagram of an exemplary embodiment of a high
  • the omnidirectional reflector 100 in accordance with the invention.
  • the reflector 100 is a one- dimensionally periodic photonic crystal having an index of refraction that is periodic in the y-
  • n,d[ n 2 d 2 .
  • the stacks are fabricated in a conventional manner on a substrate 106, e.g., silicon.
  • FIG. 1 also shows two orthogonal polarizations of incident light.
  • a p-polarized wave has an electric field E perpendicular to the plane of incidence.
  • a p-polarized wave has an electric field E perpendicular to the plane of incidence.
  • the electromagnetic modes can be characterized in Bloch form by a
  • k y is restricted to the first Brillouin zone - ⁇ /a ⁇ k y ⁇ ⁇ /a, and k x
  • the continuous functions ⁇ n (k), for each n, are the photonic bands.
  • FIG. 2 is a graph of the first three bands of an exemplary multilayer film quarter- wave
  • Any one-dimensional photonic crystal as defined by a varying index function n(y) that
  • polarized modes are plotted to the right of the origin, and the p-polarized modes to the left.
  • the shape of the projected band structure for a multilayer film can be understood intuitively.
  • the normal-incidence bandgap of FIG. 2 is recovered. This range of frequencies is enclosed by dashed lines. As k x > 0, the bands curve upwards in frequency, as
  • FIG. 3 One obvious feature of FIG. 3 is that there is no complete bandgap.
  • the normal-incidence bandgap 300 (enclosed by the dashed lines) is crossed by modes with k x > 0. This is a general feature of one-dimensional photonic crystals.
  • the criterion is not that there be no propagating states within the crystal; rather, the criterion is that there be no propagating states that may couple to an incident propagating
  • the zone is bounded above by the normal-incidence bandgap, and below
  • the ambient medium by raising the indices of refraction of the dielectric films.
  • the electromagnetic modes are lowered by the same factor .
  • FIG. 4 is a graph showing the projected band structure for an exemplary quarter-wave
  • the invention can be fabricated with other materials systems.
  • the stop band shifts to higher frequencies with more
  • FIG. 5 is a graph of the calculated spectra for a quarter- wave stack of ten films
  • the illustrated embodiment describes the characteristics of a structure having a ten-layer film of silicon and silicon dioxide, it will be appreciated that a reflector of the invention can be
  • the criterion for high omnidirectional reflection (the non-overlap of the projected bands
  • the graphical criterion for high omnidirectional reflection is that
  • ⁇ pn (k x , k y ) is the p-polarized band structure function for the multilayer film. It will be
  • the dispersion relation ⁇ n (k x ,k y ) may be derived by computing the
  • the frequency range has been calculated (when it exists) for a comprehensive set
  • the "range-midrange ratio" is defined as ( ⁇ 2 - ⁇ ,)/[(l/2)( ⁇ 1 -l- ⁇ 2 )].
  • FIG. 6 is a contour plot of the
  • range-midrange ratio for the frequency range of high omnidirectional reflection as n, and n 2 /n ⁇
  • the dashed curve is the 0%
  • omnidirectional reflection may be derived:
  • the index ratio should be reasonably high (n ln 2 > ⁇ .5) and the indices themselves be somewhat higher (n,/i_o>
  • the materials should also have a long absorption length for
  • midrange ratio is about 24% .
  • contour for quarter-wave stacks is plotted in FIG. 6 as a dashed line, which is very close to the
  • the invention demonstrates that, even though it is not possible for a one-dimensional
  • index ratio be reasonably high (n 2 /n j > 1.5) and the indices themselves be somewhat higher
  • optical response of a particular dielectric multilayer film can be predicted using the
  • This matrix represents a mapping of the field components from one side of the layer to
  • the form of the characteristic matrix for the j m layer is
  • n. is the index of refraction
  • h. is the thickness of the j* layer
  • ⁇ 0 is the angle
  • n 0 is the index of the initial
  • the matrices are then multiplied to give the film's characteristic matrix
  • p B o contains information about the index of the medium and angle of incidence on one
  • n(y) dielectric function
  • reflectors could serve as a frequency-selective mirrors for laser beams or highly-reflective coatings on focusing instruments. These would be effective for light that is incident from any
  • the invention can also be utilized in coatings with infrared mirrors to keep heat in or
  • the mirrors can be cut into small
  • the reflector of the invention could be used in improving thermo-photovoltaic cells that trap waste heat and convert it into energy.
  • the reflector of the invention can also be made to

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polarising Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Aerials With Secondary Devices (AREA)

Abstract

L'invention concerne un réflecteur, un procédé de fabrication connexe et un procédé relatif à la création d'une réflexion omnidirectionnelle élevée pour une gamme de fréquences prédéterminée correspondant à une énergie électromagnétique délivrée selon un angle d'incidence et une polarisation quelconques. Le réflecteur a une structure comprenant une surface, avec variation de l'indice de réfraction le long de la direction perpendiculaire à ladite surface, et uniformité de cet indice le long de la même surface. La structure considérée est telle i) que l'on ait une gamme de fréquences définissant une bande neutre photonique pour l'énergie électromagnétique incidente le long de la direction perpendiculaire à la surface décrite, ii) que l'on ait aussi une gamme de fréquences définissant une bande neutre photonique pour l'énergie électromagnétique incidente le long d'une direction formant un angle d'environ 90° avec la direction perpendiculaire par rapport à ladite surface, et iii) que l'on ait en outre une gamme de fréquences commune aux deux bandes neutres photoniques. Selon une variante, le réflecteur se présente dans la configuration d'un cristal photonique.
PCT/US1999/003590 1998-02-19 1999-02-19 Reflecteur omnidirectionnel a cristal photonique Ceased WO1999042892A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE69923292T DE69923292T2 (de) 1998-02-19 1999-02-19 Omnidirektionaler reflektor aus photonischem kristall
CA002320257A CA2320257C (fr) 1998-02-19 1999-02-19 Reflecteur omnidirectionnel elevee
JP2000532769A JP3654836B2 (ja) 1998-02-19 1999-02-19 光子結晶の全方向反射体
EP99909516A EP1057072B1 (fr) 1998-02-19 1999-02-19 Reflecteur omnidirectionnel a cristal photonique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7522398P 1998-02-19 1998-02-19
US60/075,223 1998-02-19

Publications (2)

Publication Number Publication Date
WO1999042892A1 true WO1999042892A1 (fr) 1999-08-26
WO1999042892A9 WO1999042892A9 (fr) 1999-11-18

Family

ID=22124348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/003590 Ceased WO1999042892A1 (fr) 1998-02-19 1999-02-19 Reflecteur omnidirectionnel a cristal photonique

Country Status (6)

Country Link
US (3) US6130780A (fr)
EP (1) EP1057072B1 (fr)
JP (1) JP3654836B2 (fr)
CA (1) CA2320257C (fr)
DE (1) DE69923292T2 (fr)
WO (1) WO1999042892A1 (fr)

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US7854505B2 (en) 2006-03-15 2010-12-21 The Board Of Trustees Of The University Of Illinois Passive and active photonic crystal structures and devices
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US9658375B2 (en) 2012-08-10 2017-05-23 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirectional high chroma red structural color with combination metal absorber and dielectric absorber layers
US9664832B2 (en) 2012-08-10 2017-05-30 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirectional high chroma red structural color with combination semiconductor absorber and dielectric absorber layers
US9678260B2 (en) 2012-08-10 2017-06-13 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirectional high chroma red structural color with semiconductor absorber layer
US9739917B2 (en) 2007-08-12 2017-08-22 Toyota Motor Engineering & Manufacturing North America, Inc. Red omnidirectional structural color made from metal and dielectric layers
US9810824B2 (en) 2015-01-28 2017-11-07 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirectional high chroma red structural colors
US10048415B2 (en) 2007-08-12 2018-08-14 Toyota Motor Engineering & Manufacturing North America, Inc. Non-dichroic omnidirectional structural color
US10690823B2 (en) 2007-08-12 2020-06-23 Toyota Motor Corporation Omnidirectional structural color made from metal and dielectric layers
US10788608B2 (en) 2007-08-12 2020-09-29 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures
US10870740B2 (en) 2007-08-12 2020-12-22 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures and protective coatings thereon
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JP2002504711A (ja) 2002-02-12
CA2320257A1 (fr) 1999-08-26
US6130780A (en) 2000-10-10
US6903873B1 (en) 2005-06-07
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WO1999042892A9 (fr) 1999-11-18
EP1057072A1 (fr) 2000-12-06

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