[go: up one dir, main page]

WO1998034280B1 - Dispositif a effet de champ a dissipation de charge - Google Patents

Dispositif a effet de champ a dissipation de charge

Info

Publication number
WO1998034280B1
WO1998034280B1 PCT/US1998/000129 US9800129W WO9834280B1 WO 1998034280 B1 WO1998034280 B1 WO 1998034280B1 US 9800129 W US9800129 W US 9800129W WO 9834280 B1 WO9834280 B1 WO 9834280B1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
charge
charge dissipation
dielectric layer
field emission
Prior art date
Application number
PCT/US1998/000129
Other languages
English (en)
Other versions
WO1998034280A1 (fr
Filing date
Publication date
Priority claimed from US08/794,559 external-priority patent/US5847407A/en
Application filed filed Critical
Priority to EP98901180A priority Critical patent/EP0901689A4/fr
Priority to KR1019980707932A priority patent/KR100301603B1/ko
Priority to JP52913098A priority patent/JP3999276B2/ja
Publication of WO1998034280A1 publication Critical patent/WO1998034280A1/fr
Publication of WO1998034280B1 publication Critical patent/WO1998034280B1/fr

Links

Abstract

L'invention porte sur un dispositif (200, 300, 400) à effet de champ à dissipation de charge comportant un substrat support (210, 310, 410), une cathode (215, 315, 415) formée sur le substrat, une couche diélectrique (240, 340, 440) formée sur la cathode (215, 315, 415), et comportant des puits émetteurs (260, 360, 460) et un puits de dissipation de charge (252, 352, 452, 453) exposant une surface de recueil de charges (248, 348, 448, 449) servant à purger les charges gazeuses positives produites pendant le fonctionnement du dispositif (200, 300, 400), un émetteur d'électrons (270, 370, 470) formé dans chacun des puits émetteurs (260, 360, 460), et une anode (280, 380, 480) distante de la couche diélectrique (240, 340, 440) et servant à recueillir les électrons émis par les émetteurs d'électrons (270, 370, 470).
PCT/US1998/000129 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge WO1998034280A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98901180A EP0901689A4 (fr) 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge
KR1019980707932A KR100301603B1 (ko) 1997-02-03 1998-01-05 전하소모전계방출디바이스
JP52913098A JP3999276B2 (ja) 1997-02-03 1998-01-05 電荷散逸型電界放射デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/794,559 1997-02-03
US08/794,559 US5847407A (en) 1997-02-03 1997-02-03 Charge dissipation field emission device

Publications (2)

Publication Number Publication Date
WO1998034280A1 WO1998034280A1 (fr) 1998-08-06
WO1998034280B1 true WO1998034280B1 (fr) 1998-10-29

Family

ID=25162991

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/000129 WO1998034280A1 (fr) 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge

Country Status (7)

Country Link
US (1) US5847407A (fr)
EP (1) EP0901689A4 (fr)
JP (1) JP3999276B2 (fr)
KR (1) KR100301603B1 (fr)
CN (1) CN1114955C (fr)
TW (1) TW385467B (fr)
WO (1) WO1998034280A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929560A (en) * 1996-10-31 1999-07-27 Motorola, Inc. Field emission display having an ion shield
US6075323A (en) * 1998-01-20 2000-06-13 Motorola, Inc. Method for reducing charge accumulation in a field emission display
FR2784225B1 (fr) * 1998-10-02 2001-03-09 Commissariat Energie Atomique Source d'electrons a cathodes emissives comportant au moins une electrode de protection contre des emissions parasites
US6992698B1 (en) * 1999-08-31 2006-01-31 Micron Technology, Inc. Integrated field emission array sensor, display, and transmitter, and apparatus including same
US6905683B2 (en) * 2000-05-03 2005-06-14 Novo Nordisk Healthcare A/G Human coagulation factor VII variants
US6459206B1 (en) 2000-05-31 2002-10-01 Sri International System and method for adjusting the orbit of an orbiting space object using an electrodynamic tether and micro-fabricated field emission device
US6577130B1 (en) 2000-05-31 2003-06-10 Sri International System and method for sensing and controlling potential differences between a space object and its space plasma environment using micro-fabricated field emission devices
WO2001092897A2 (fr) * 2000-05-31 2001-12-06 Sri International Systemes et procedes mettant en application des dispositifs d'emission de champ microfabriques afin de detecter et de controler des differences potentielles entre un objet spatial et son environnement plasmatique spatial, d'emettre une charge depuis un objet spatial et s'utilisant avec un filin electrodynamique pour regler
US6653625B2 (en) * 2001-03-19 2003-11-25 Gyros Ab Microfluidic system (MS)
TW541561B (en) * 2001-06-29 2003-07-11 Au Optronics Corp Field emission display structure
WO2003010555A2 (fr) * 2001-07-24 2003-02-06 Case Western Reserve University Regulation de la dose de rayons x en fonction de la taille du patient
US7071603B2 (en) 2002-02-20 2006-07-04 Cdream Corporation Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US7053538B1 (en) 2002-02-20 2006-05-30 Cdream Corporation Sectioned resistor layer for a carbon nanotube electron-emitting device
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
AU2003304452A1 (en) * 2003-08-20 2005-03-10 Cdream Display Corporation Patterned resistor layer suitable for a carbon nano-tube electron-emitting device, and associated fabrication method
EP2392655A3 (fr) 2003-09-09 2012-02-29 Novo Nordisk Health Care AG Polypeptides de facteur VII à coagulation
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
US20060066217A1 (en) * 2004-09-27 2006-03-30 Son Jong W Cathode structure for field emission device
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
ATE515052T1 (de) * 2007-12-28 2011-07-15 Selex Sistemi Integrati Spa Feldemissionsbauelement des hochfrequenz- triodentyps und herstellungsprozess dafür
US8260174B2 (en) * 2008-06-30 2012-09-04 Xerox Corporation Micro-tip array as a charging device including a system of interconnected air flow channels
KR20130001931A (ko) * 2011-06-28 2013-01-07 삼성전자주식회사 전계방출패널
KR20130100630A (ko) 2012-03-02 2013-09-11 삼성전자주식회사 전자 방출 소자 및 이를 포함한 엑스선 발생 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874981A (en) * 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
US5063323A (en) * 1990-07-16 1991-11-05 Hughes Aircraft Company Field emitter structure providing passageways for venting of outgassed materials from active electronic area
US5163328A (en) * 1990-08-06 1992-11-17 Colin Electronics Co., Ltd. Miniature pressure sensor and pressure sensor arrays
US5329207A (en) * 1992-05-13 1994-07-12 Micron Technology, Inc. Field emission structures produced on macro-grain polysilicon substrates
US5374868A (en) * 1992-09-11 1994-12-20 Micron Display Technology, Inc. Method for formation of a trench accessible cold-cathode field emission device
FR2702869B1 (fr) * 1993-03-17 1995-04-21 Commissariat Energie Atomique Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
JPH07111868B2 (ja) * 1993-04-13 1995-11-29 日本電気株式会社 電界放出冷陰極素子
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
US5635791A (en) * 1995-08-24 1997-06-03 Texas Instruments Incorporated Field emission device with circular microtip array
US5693235A (en) * 1995-12-04 1997-12-02 Industrial Technology Research Institute Methods for manufacturing cold cathode arrays
US5698942A (en) * 1996-07-22 1997-12-16 University Of North Carolina Field emitter flat panel display device and method for operating same

Similar Documents

Publication Publication Date Title
WO1998034280B1 (fr) Dispositif a effet de champ a dissipation de charge
AU621001B2 (en) Switched anode field emission device
US5528099A (en) Lateral field emitter device
US5663608A (en) Field emission display devices, and field emisssion electron beam source and isolation structure components therefor
US5173634A (en) Current regulated field-emission device
JP4056226B2 (ja) 半導体装置
EP1326264A3 (fr) Dispositif d'affichage à émission de champ avec émetteur à base de carbone
KR100301603B1 (ko) 전하소모전계방출디바이스
EP0957503A3 (fr) Procédé de fabrication d'une cathode à émission par effet de champ
WO1999063614A8 (fr) Procede servant a fabriquer une cellule photoelectrique et semiconducteur a l'oxyde pour cellule photoelectrique
US5345141A (en) Single substrate, vacuum fluorescent display
CN1181613A (zh) 一种场致发射器件
WO2006062622A3 (fr) Afficheur a emission de champ a mise en forme des champs de trajectoires d'electrons
US5420054A (en) Method for manufacturing field emitter array
US6012958A (en) Field emission device micropoint with current-limiting resistive structure and method for making same
US5804909A (en) Edge emission field emission device
WO2002089167A3 (fr) Emetteur par effet tunnel
JPH10208649A5 (fr)
TW356552B (en) Improved field emission device having a charge bleed-off barrier
CA1249011A (fr) Cathode semiconductrice a stabilite accrue
JP3200105B2 (ja) サイリスタの製造方法
EP1308980A3 (fr) Emetteur à effet tunnel et procédé de fabrication
KR20020051592A (ko) 카본 나노튜브 캐소드를 가진 삼극형 전계 방출 소자 및이를 이용한 삼극형 고주파 진공 장치와 전계 방출디스플레이 장치
WO2002089168A3 (fr) Emetteur a effet tunnel avec couche dielectrique a base de silicium
US20050275336A1 (en) Field emission device and method for making same