WO1998025313A1 - Radiation emitting devices - Google Patents
Radiation emitting devices Download PDFInfo
- Publication number
- WO1998025313A1 WO1998025313A1 PCT/GB1997/003356 GB9703356W WO9825313A1 WO 1998025313 A1 WO1998025313 A1 WO 1998025313A1 GB 9703356 W GB9703356 W GB 9703356W WO 9825313 A1 WO9825313 A1 WO 9825313A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- emitting device
- radiation emitting
- pattern
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/862—Resonant cavity structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Definitions
- This invention relates to radiation emitting devices and, in particular, to an improved manner of construction for light emitting diodes. More particularly, but not exclusively, the invention relates to a micro-cavity for use in light emitting diodes.
- Light emitting diodes comprise a light (radiation) emitting substance usually in the form of a thin film. This light emitting substance is usually positioned inside a mirrored cavity, sometimes called a micro-cavity. Two mirrors are used to form the micro-cavity and one of the mirrors is more reflective than the other. The less reflective of the two mirrors permits radiation to pass through it and escape from the micro-cavity, thus providing useful output light from the device.
- the efficiency of an LED is increased by improving coupling between radiation modes of the micro-cavity and the light emitting substance.
- One way of achieving this is to ensure that the separation between the mirrors is of the order of the wavelength of the desired output radiation.
- Metallic mirrors however are reflective over a wider range of incident angles, but have losses associated with the absorption of the metal. Because metallic mirrors are generally thinner than the wavelength of light they allow the fabrication of very compact devices.
- the inventors have realised that in order to improve the quantum efficiency of an LED it is desirable to remove the unwanted coupling between the emitters and the SPP modes. This applies particularly to micro-cavities formed from two metallic mirrors and those formed from one metallic mirror and one DBR mirror. Since the primary reason for the wasted energy is the generation of surface plasmon polaritons. removing this mode from the micro-cavity is required in order that the efficiency can be improved.
- a radiation emitting device including an optical micro-cavity bounded by first and second reflective boundaries wherein at least one of said reflective boundaries has associated therewith inhibiting means to inhibit the coupling of radiation from within the micro-cavity to predetermined propagation modes associated with at least one of said first and second reflect e boundaries.
- a radiation emitting device including an optical micro- cavity comprising first and second mirrors in which at least one of said mirrors has a substantially non-planar surface.
- a light emitting device e.g. LED
- first and second mirrors one or both of which are metallic, defining a micro-cavity and a light emitting substance disposed in the micro-cavity, wherein at least one of the mirrors has a substantially non-planar surface.
- a light emitting device comprising a light emitting substance interposed between a first and a second mirror, each mirror having a surface, the mirrors defining a micro-cavity, wherein means is provided for establishing a photonic band gap substantially to reduce the coupling of energy from within the micro-cavity, to modes associated with at least one mirror surface.
- a method of fabricating a radiation emitting device including a substrate with a repeating pattern comprising the steps of causing a master pattern to induce a first repeating pattern to be formed on the substrate, rotating the master pattern with respect to the substrate and inducing a second repeating pattern to be formed on the substrate, the two repeating patterns sharing a common region.
- the non-planar mirror(s) or reflector(s) may be fabricated according to the method hereinafter described and is/are preferably in the form of an array of "hillocks' " or "dimples", having a repeating pattern.
- the pattern may be generally rectangular, but is preferably, generally hexagonal.
- Portions of substrate may be selectively removed by etching techniques such as ion beam lithography, photo-lithography or chemical etching.
- a method of manufacturing a radiation emitting device incorporating a sub-micron, repeating pattern in or on a dielectric substrate comprising the steps of placing a pattern bearing mask between the surface of the substrate and an energy source, exposing the substrate to the energy source and forming a pattern rotating the mask with respect to the substrate, re-exposing the surface of the substrate to the energy source thereby forming another pattern and selectively removing portions of exposed or non-exposed substrate, so as to reveal a repeating pattern on or in the substrate.
- the pattern is in the form of a plurality of regularly spaced, undulating regions.
- these regions are in the form of raised circularly symmetric "hillocks" or “dimples” and the overall effect of such a surface approximates closely to a circular Brillouin zone.
- the substrate is fabricated by using a system of multiple exposures in a standard two beam interferometer.
- a standard two beam interferometer Preferably three exposures, with the substrate rotated by 60° between each exposure, is required in to obtain an hexagonal structure.
- this requires a high degree of precision by ensuring all three exposures are exactly in register. In practice this is difficult.
- two exposures may be made, followed by selective partial etching in order to achieve a desirable intensity profile of pattern across the substrate.
- Figure 1 shows a theoretical prediction in the form of a logarithmic scaled graph of the energy dissipated due to different causes, as a fraction of the total energy available for the production of radiation from an LED with metallic mirrors.
- Figure 2 shows a dispersion curve for a micro-cavity with metallic mirrors.
- Figure 3 is a schematic view of a micro-cavity used to demonstrate the prohibition of the SPP decay channel:
- Figure 4 is a graph of the measured dispersion curve for the micro-cavity depicted in Figure 3.
- Figure 5 is a schematic diagram of one possible LED structure that exhibits improved efficiency by incorporating a non-planar mirror for one of the mirrors that forms the micro-cavity;
- Figure 6 is a scanning electron micrograph (SEM) image of a non-planar metallic surface that exhibits photonic band gap for surface plasmon poiariton modes in the red part of the visible spectrum.
- Figure 7 is a theoretically produced intensity distribution for the exposure of photoresist to two grating patterns, oriented at 60 degrees with respect to each other;
- Figure 8 is a schematic of the prism coupling technique used to measure the SPP band gap (i.e. band structure) of a textured surface similar to that shown in Figure 5;
- Figure 9 is the measured dispersion curve for surface plasmon polarity modes propagating on a surface similar to the one shown in Figure 6.
- Figure 10 shows how the energy of the band gap edges.
- Figure 9. vary with propagation angle.
- FIG. 1 a graphical illustration of the relative importance of different decay channels is shown below in Figure 1, which depicts (on a logarithmic scale) relative amounts of energy, generated in a micro-cavity.
- the integrals under the different regions of the curve indicate the relative values of energy dissipated.
- Region 1 represents energy dissipated as potentially useful radiation.
- Region 2 represents energy dissipated coupling to SPP modes on all metal surfaces of mirrors.
- Region 3 represents energy losses due to the metal and are important only for emitters very close (i.e. less than approximately 1/60 the wavelength of the radiation) to the metal. It is apparent that the area in region 1 , which is potentially useful radiation, represents approximately 50% of the total theoretical energy available.
- micro-cavity (d) where d is the inter-mirror spacing and is less than approximately 20nm, the lifetime of a light emitting device rapidly drops as fluorescence is quenched.
- Blocking the propagation of modes in all directions requires a repeating pattern with a Brillouin zone that is as close to circular as possible.
- a surface with hexagonal symmetry is a reasonable approximation to this pattern.
- the desired effect of a non-planar mirror on the surface plasmon poiariton modes, i.e. prohibiting their propagation, is demonstrated with a simple micro-cavity structure as described below with reference to Figure 3.
- the allowed modes of the metallic mirrored micro-cavity are represented on a dispersion curve, in Figure 2.
- the frequency of allowed modes, as a function of in-plane wave vector, ⁇ is shown.
- the dipole emitters have a fixed frequency, but may couple to modes with any value of k at that frequency.
- the desired radiation mode of the micro-cavity is also indicated on Figure 2 as feature 1. It is seen from Figure 2 that another mode, indicated as feature 2 in Figure 2. is also present at the same frequency as feature 1.
- Feature 2 is a surface plasmon poiariton (SPP) mode of the metallic micro-cavity.
- SPP surface plasmon poiariton
- Figure 3 shows a cavity 31 between a planar silver layer 33 on a glass plate 35 provided with a glass prism 37 and a corrugated optically-thick silver layer 39 on a glass substrate 41.
- This is a schematic view of a micro-cavity used to demonstrate the prohibition of the SPP decay channel.
- Corrugation is preferably in the form of a repeating ("periodic " ) pattern.
- the pattern required is in the form of a non-planar surface and comprises an array of "hillocks” “ or “dimples” arranged so that the distance between "hillocks' " or “dimples' " , d. is given approximately by.
- the non-planar surface of one of the mirrors effectively generates a broad photonic band gap for surface plasmon polaritons (SPPs) and thereby reduces the overall loss of energy from the light emitting device which has hitherto occurred due to coupling between the light emitters and the SPP modes of the metallic mirrors.
- the radiation efficiency of the device is thus greatly improved.
- An optical or electrical pump source may be fabricated integrally with the light emitting device or it may added as a part finished device for subsequent use.
- Surface plasmon polaritons are non-radiative TM polarised modes that propagate at the interface between a metal and a dielectric.
- a wavelength scale periodicity has to be introduced.
- a surface plasmon poiariton this may be readily achieved by corrugating the metal/dielectric surface of a mirror defining the micro-cav .
- other ways of achieving this objective may be possible, including for example and without limitation, modulating the or each refractive index of the material(s) within the micro-cavity.
- a corrugated surface however, only blocks the propagation of surface plasmon polaritons over a narrow range of directions. In order to generate a full band gap.
- Figure 2 shows the dispersion curve for a micro-cavity with metallic mirrors.
- TE is the lowest order transverse electric mode of the micro-cavity.
- TM is normally the lowest order transverse magnetic mode of a micro-cavity, but, because the mirrors of the micro-cavity depicted are metallic, another mode exists, namely the surface plasmon poiariton mode. (SPP).
- SPP surface plasmon poiariton mode.
- a light emitting diode based on a micro-cavity may be operated on or around cut-off, i.e. at a frequency marked as f c . The presence of the SPP mode at this frequency provides an unwanted loss mechanism for the dipole emitters located within the micro-cavity.
- Figure 4 is a graph of the measured dispersion curve for the micro-cavity depicted in Figure 3.
- Feature 1 is the lowest order radiative mode, namely the one into which it is desired the emitters couple to produce a useful output from the device.
- the unwanted surface plasmon poiariton mode is depicted as being blocked by a band gap. (feature 2); contrast this with the dispersion curve of the planar cavity, Figure 3.
- this gap can be made to coincide with the frequency of the lowest order radiative mode, feature 1 of Figure 4. thus preventing or eliminating loss due to coupling between emitters and surface plasmon poiariton modes. This prevents or eliminates loss due to coupling between emitters and surface plasmon poiariton modes.
- This band gap pertains to only one direction of SPP mode propagation.
- An array of "hillocks "” or “dimples” produces a band gap in all propagation directions (as described below) and thus eliminates or prevents the wasteful SPP coupling in light emitting devices in all directions.
- Figure 5 is a schematic diagram of one possible light emitting diode structure that exhibits improved efficiency by incorporating a non-planar mirror for one of the mirrors that forms the micro-cavity. It has a substrate 51 which carries a textured lower metal mirror 53. An optical cavity 55 includes a light emitting substance. Useful optical radiation is emitted through a thin top mirror 59.
- Figure 6 is a scanning electron micrograph of such a surface with a periodicity suitable for work at optical frequencies.
- the "hillocks" or “dimples” are formed from a photoresist deposited onto a fused silica substrate.
- the whole surface is subsequently coated with a relatively thick silver film which is preferably in the region of 20-60nm and most preferably substantially more than 40nm thick.
- the silver film supports the propagation of surface plasmon polaritons. The fabrication and operation of this structure is described in greater detail below.
- Figure 7 shows an intensity map which does not have full hexagonal symmetry.
- This pattern is achieved by exposing the substrate only twice. There is. however, an hexagonal array of dark regions 71 that have received relatively low amounts of exposure. By making use of the fact that there is a threshold value of exposure needed to affect photoresist, it is possible to remove all the exposed parts of the substrate, leaving just the aforementioned unexposed regions.
- This technique subtly achieves the same effect as three exposures and only requires two exposures, whilst still revealing an hexagonal array of "hillocks" or “dimples " '.
- the advantage is that only two exposures are required and these are achieved with relative rotation of mask and substrate. The resultant effect is easier to attain because it is easier to expose a repeating linear pattern. rotate the pattern (with respect to the substrate) and re-expose the same pattern: than to try and ensure co-registration of three repeating linear patterns on a sub-microscopic scale.
- SPPs surface plasmon polaritons
- the surface modes are non- radiative, so that at a given energy SPPs have a larger wave vector than a photon of the same frequency.
- the wave vector of the photon has to be enhanced. This can be done using a standard prism coupling technique as shown for example in Figure 8.
- the uncoalcd face 81 of a fused silica substrate is brought into contact with a silica prism 83, by means of a matching fluid (not shown).
- Monochromatic radiation k () Monochromatic radiation
- the band structure was measured by recording reflected intensity as a function of the photon energy and k x .
- a white light source and a computer controlled spectrometer were used to produce a collimated TM polarised monochromatic beam in the wavelength range 400nm to 800nm.
- the angle of incidence was controlled by placing the sample on a computer controlled rotation stage capable of 0.01 ° resolution.
- Figure 9 shows a typical set of reflectively data recorded in this .
- the regions of low reflectivity are a result of photons that have been absorbed through the resonant excitation of surface plasmons. Since these photons match both the and the wave vector of the surface plasmon polaritons, the dark bands in Figure 9. directly map out the dispersion curve of the surface mode. There is a clear gap in the dispersion curve centred around 1.98eV.
- the reflectivity data is expressed as photon energy (eV) as a function of c v Lighter regions represent high reflectivity and darker regions correspond to low reflectivity.
- the dark triangle (Q) in the lo er right corner is an artefact of the measurement technique.
- the propagation direction ⁇ is defined with respect to one of the principal Bragg vectors. Experimentally this may be determined by diffracting a 457.9nm wavelength beam from an argon ion laser.
- An example of one method of fabricating a substrate having a repeating sub- micron hexagonal array is described in detail in IEEE Photonics Technology Letters 8 No. 1 1.
- An hexagonal array is made by first exposing the substrate twice to the same interference pattern, with the substrate rotated by 60° about its surface normal between exposures. For each exposure, the intensity profile in the interference pattern is sinusoidal.
- Figure 7 shows the sum of two such interference patterns and represents the total exposure at each point across the photoresist film. This pattern does not have hexagonal symmetry.
- hexagonal symmetry could be achieved by making a third exposure with the substrate rotated by a further 60° , but this would require setting the interference pattern exactly in register with the previous two. As this would mean aligning the sample accurately on a sub-micron scale, this is not generally practicable.
- An alternative approach is to make use of nonlincarities in the fabrication process to generate additional Fourier components in the surface topography of the substrate.
- the aim is to produce a strong component that is the sum of the two components present in the double exposure.
- True hexagonal symmetry requires that these three components have the same magnitude.
- the nonlinearities arise from the solubility response of the photoresist to exposure and the finite thickness of the film.
- the solubility response of photoresist as a function of exposure exhibits a threshold value below which the solubility is relatively unaffected, and a saturation level at very high exposures.
- a positive photoresist was used so that the regions exposed to less than the threshold value remain insoluble in the developer.
- Figure 7 there is an hexagonal array of points (dark) which receive a very low exposure. It is these points that form the "hillocks” or “dimples " in the final structure.
- By controlling the exposure level it is possible to ensure that all other regions of the film receive an above-threshold exposure and so will be soluble to some extent. Upon development, these regions begin to dissolve and become thinner, producing a surface texture that reflects the exposure pattern ( Figure 7). However, because the film is thin (typically 0.5 ⁇ m), the exposed regions will eventually completely dissolve to leave an hexagonal array of photoresist "hillocks" or “dimples” 71 on the substrate surface ( Figure 7).
- Figure 6 is an SEM of a structure fabricated with a positive resist.
- SI 805 photoresist was used, mixed 1 : 1 with Hoechst AZ thinners.
- the photoresist was spin-coated at 4000 rpm onto an optically flat glass substrate and baked at 95°C for 30 min to remove residual solvent.
- the film was exposed twice in the interferometer, the substrate being rotated by 60° between exposures. In each case, the film was exposed to around 3 Jem of 457.9nm wavelength radiation from an argon ion laser.
- the photoresist was subsequently developed for 4.5 min in a solution of MicropositTM developer diluted 1 : 1 with deionised water. It was found that control of the developer concentration was critical. If the developer was too concentrated then it removed all the photoresist. If it was too dilute then it failed to dissolve the film fully even in the most exposed regions.
- Figure 6 includes a schematic diagram showing the dimensions of the array, determined by measuring the diffraction of 457.9nm light. The uniformity of the array is very good with few defects and with "hillocks "' or ""dimples "" of very similar sizes, around l OOnm radius.
- the periodicity of the array is readily controlled by the angle of incidence ⁇ of the two beams in the interferometer.
- the radius of the "hillocks "' or '"dimples '" depend on the periodicitv of the interference pattern, the value of the threshold exposure, and on the total exposure used. For such small features, however, there are a number of other factors which may limit the size. These include the effect of surface tension, the dependence of the development rate on surface curvature, and on the size of the smallest particle that can be removed by the developer. With a pitch of 300nm. the smallest "hillocks" or “dimples" that have been fabricated have a radius of 50nm.
- Reproducibility may be improved by using a larger pitch which in turn would result in larger “hillocks' " or “dimples” which may be less prone to attack by the developer.
- micro-cavity may be incorporated into other optical or opto-electronic devices such as an interferometer.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Semiconductor Lasers (AREA)
Abstract
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51503998A JP2001507516A (en) | 1996-12-05 | 1997-12-04 | Radiation emitting device |
| EP97947782A EP0946994A1 (en) | 1996-12-05 | 1997-12-04 | Radiation emitting devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9625332.3 | 1996-12-05 | ||
| GBGB9625332.3A GB9625332D0 (en) | 1996-12-05 | 1996-12-05 | An improved micro-cavity, suitable for use in a led |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09325351 A-371-Of-International | 1999-06-04 | ||
| US09/983,713 Continuation US20020048304A1 (en) | 1996-12-05 | 2001-10-25 | Radiation emitting devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998025313A1 true WO1998025313A1 (en) | 1998-06-11 |
Family
ID=10804017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1997/003356 Ceased WO1998025313A1 (en) | 1996-12-05 | 1997-12-04 | Radiation emitting devices |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0946994A1 (en) |
| JP (1) | JP2001507516A (en) |
| GB (1) | GB9625332D0 (en) |
| WO (1) | WO1998025313A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000070691A1 (en) * | 1999-05-12 | 2000-11-23 | University Of Durham | Light emitting diode with improved efficiency |
| WO2006048660A1 (en) * | 2004-11-04 | 2006-05-11 | Mesophotonics Limited | Metal nano-void photonic crystal for enhanced raman spectroscopy |
| KR100899940B1 (en) * | 2007-01-18 | 2009-05-28 | 광주과학기술원 | Silicon quantum dot light emitting device and its manufacturing method |
| US7835006B2 (en) * | 2004-11-05 | 2010-11-16 | Nomadics, Inc. | Optical fiber sensors using grating-assisted surface plasmon-coupled emission (GASPCE) |
| US8129738B2 (en) | 2002-08-02 | 2012-03-06 | Qinetiq Limited | Optoelectronic device with periodic grating microstructure |
| RU2737725C1 (en) * | 2020-06-05 | 2020-12-02 | Федеральное государственное бюджетное учреждение науки Научно-технологический центр уникального приборостроения Российской академии наук (НТЦ УП РАН) | Method of rendering inhomogeneities of a flat semiconductor surface in terahertz radiation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5253262A (en) * | 1990-10-31 | 1993-10-12 | Kabushiki Kaisha Toshiba | Semiconductor laser device with multi-directional reflector arranged therein |
| EP0698951A1 (en) * | 1994-08-23 | 1996-02-28 | France Telecom | Optical, optoelectronic or photonic element with at least one laterally confined optical cavity and its method of fabrication |
-
1996
- 1996-12-05 GB GBGB9625332.3A patent/GB9625332D0/en active Pending
-
1997
- 1997-12-04 EP EP97947782A patent/EP0946994A1/en not_active Withdrawn
- 1997-12-04 JP JP51503998A patent/JP2001507516A/en active Pending
- 1997-12-04 WO PCT/GB1997/003356 patent/WO1998025313A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5253262A (en) * | 1990-10-31 | 1993-10-12 | Kabushiki Kaisha Toshiba | Semiconductor laser device with multi-directional reflector arranged therein |
| EP0698951A1 (en) * | 1994-08-23 | 1996-02-28 | France Telecom | Optical, optoelectronic or photonic element with at least one laterally confined optical cavity and its method of fabrication |
Non-Patent Citations (2)
| Title |
|---|
| ABRAM I ET AL: "NONGUIDING HALF-WAVE SEMICONDUCTOR MICROCAVITIES DISPLAYING THE EXCITON-PHOTON MODE SPLITTING", APPLIED PHYSICS LETTERS, vol. 65, no. 20, 14 November 1994 (1994-11-14), pages 2516 - 2518, XP000479890 * |
| ABRAM I ET AL: "Spontaneous emission in planar semiconductor microcavities displaying vacuum Rabi splitting", PHYSICAL REVIEW A (ATOMIC, MOLECULAR, AND OPTICAL PHYSICS), MAY 1995, USA, vol. 51, no. 5, ISSN 1050-2947, pages 4116 - 4122, XP002057206 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000070691A1 (en) * | 1999-05-12 | 2000-11-23 | University Of Durham | Light emitting diode with improved efficiency |
| US6967437B1 (en) | 1999-05-12 | 2005-11-22 | University Of Durham | Light emitting diode with improved efficiency |
| US8129738B2 (en) | 2002-08-02 | 2012-03-06 | Qinetiq Limited | Optoelectronic device with periodic grating microstructure |
| WO2006048660A1 (en) * | 2004-11-04 | 2006-05-11 | Mesophotonics Limited | Metal nano-void photonic crystal for enhanced raman spectroscopy |
| US7483130B2 (en) | 2004-11-04 | 2009-01-27 | D3 Technologies, Ltd. | Metal nano-void photonic crystal for enhanced Raman spectroscopy |
| US7864313B2 (en) | 2004-11-04 | 2011-01-04 | Renishaw Diagnostics Limited | Metal nano-void photonic crystal for enhanced raman spectroscopy |
| US7835006B2 (en) * | 2004-11-05 | 2010-11-16 | Nomadics, Inc. | Optical fiber sensors using grating-assisted surface plasmon-coupled emission (GASPCE) |
| KR100899940B1 (en) * | 2007-01-18 | 2009-05-28 | 광주과학기술원 | Silicon quantum dot light emitting device and its manufacturing method |
| RU2737725C1 (en) * | 2020-06-05 | 2020-12-02 | Федеральное государственное бюджетное учреждение науки Научно-технологический центр уникального приборостроения Российской академии наук (НТЦ УП РАН) | Method of rendering inhomogeneities of a flat semiconductor surface in terahertz radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0946994A1 (en) | 1999-10-06 |
| GB9625332D0 (en) | 1997-01-22 |
| JP2001507516A (en) | 2001-06-05 |
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