WO1998014824A1 - Miroir electrochrome et procede de production d'un miroir electrochrome - Google Patents
Miroir electrochrome et procede de production d'un miroir electrochrome Download PDFInfo
- Publication number
- WO1998014824A1 WO1998014824A1 PCT/DE1997/002241 DE9702241W WO9814824A1 WO 1998014824 A1 WO1998014824 A1 WO 1998014824A1 DE 9702241 W DE9702241 W DE 9702241W WO 9814824 A1 WO9814824 A1 WO 9814824A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrochromic mirror
- electrochromic
- mirror according
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R1/00—Optical viewing arrangements; Real-time viewing arrangements for drivers or passengers using optical image capturing systems, e.g. cameras or video systems specially adapted for use in or on vehicles
- B60R1/02—Rear-view mirror arrangements
- B60R1/08—Rear-view mirror arrangements involving special optical features, e.g. avoiding blind spots, e.g. convex mirrors; Side-by-side associations of rear-view and other mirrors
- B60R1/083—Anti-glare mirrors, e.g. "day-night" mirrors
- B60R1/088—Anti-glare mirrors, e.g. "day-night" mirrors using a cell of electrically changeable optical characteristic, e.g. liquid-crystal or electrochromic mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
Definitions
- the invention relates to an electrochromic mirror, consisting of at least the following solid thin layers: a transparent support, in particular a glass support; a transparent electrode layer; an ion storage layer; a transparent ion conducting layer made of an inorganic material; a cathodic electrochromic layer and a reflection layer, the ions causing the coloring / decoloring process being protons (H + ).
- the order of the ion storage layer and the cathodic electrochromic layer is interchangeable.
- the ion storage layer can act as a pure storage layer without any noteworthy coloring when the ions are stored or extracted. However, it can also be an anodically coloring electro-chrome layer.
- solid thin layers encompasses thin layers applied by chemical or physical coating processes in the solid state.
- WO x (x 3) is generally used for the cathodically coloring layer.
- the inorganic ion-conducting layer is electronically insulating, but has good conductivity for the ions causing the coloring or decolorization process. Such ions are in particular lithium ions (Li + ) and protons (H + ).
- silicon dioxide (Si0 2 ) has proven to be particularly suitable for ion-conducting layers in the solid materials.
- the reflection layer typically consists of aluminum, but other metals such as gold or silver are also mentioned. The electrical connections are made to the reflection layer and to the transparent electrode layer.
- JP-A 61-241 733 it is proposed, inter alia, in JP-A 61-241 733 to use the oxide or hydroxide of a transition metal, for example Ir, Ni, Cr, V, Ru, Rh, as the material for the ion storage layer.
- a transition metal for example Ir, Ni, Cr, V, Ru, Rh
- Such layers are particularly intended to achieve a high response speed and desired side reactions can be prevented.
- US Pat. No. 4,878,743 also recognizes the transition metals as advantageous and preferably Cr 2 0 3 , NiO or Ir0 2 as anodically coloring materials.
- the electrochromic elements described there are used as rear-view mirrors for motor vehicles.
- WO 91/02282 discloses an electrochromic element which works with an ion storage layer based on cerium oxide.
- the cerium atoms are partially replaced by those with a smaller ion radius, for example titanium atoms, tin atoms and germanium atoms, which is intended to improve the diffusion kinematics of the lithium ions used exclusively there.
- (Ce 05 Ti 05 ) O 2 is given.
- a further element is used as an additive, for example niobium or tantalum, which is intended to increase the electronic line by inducing valences.
- the transparent electrode layer consists, for example, of tin-doped In 2 0 3 or fluorine-doped Sn0 2 or ZnO. Sputtering or vacuum evaporation from the corresponding oxide is specified as a suitable method for producing the ion storage layer.
- a similar system, also working with lithium ions, with a (Ce x Ti y ) O z layer is known from DE 41 16 059 AI. Electrochromic mirrors working with polymer-based ion guide layers are complex to manufacture and often not sufficiently UV-resistant.
- an electrochromic element is to be used for mirrors, which are used in particular as glare-free rear-view mirrors in motor vehicles, it must be able to change its reflectivity quickly and uniformly over its surface in order to be able to offer the desired protection against glare from headlights of other vehicles with otherwise high light reflection .
- the reflection stroke namely the difference between the reflection maximum and the reflection minimum, should be as high as possible.
- the mirror must survive a large number of switching cycles and function properly in a wide temperature range and for many years. In addition, it should be possible to manufacture it as inexpensively as possible.
- the layer structure according to the invention can be used to produce an electrochromic mirror which can be switched sufficiently quickly, which does not require any expensive preconditioning or doping with ions, and which has a high reflection stroke.
- the mirror according to the invention can be produced inexpensively by means of magnetron sputtering.
- the protons causing the system's switching ability are built into the layer system in the course of the coating, so that a functional electrochromic mirror is available immediately after manufacture and after a few start switching cycles.
- Vanadium and / or chromium are preferably used as the alloy material, that is to say as component Me in the material for the ion storage layer made of (Ni x Me y ) O z .
- the Ni-Me mixed oxides according to the invention are distinguished from the unalloyed nickel oxide by a higher stability of the mirror, a more homogeneous coloring and a higher storage capacity than would be expected with an arithmetic averaging of the corresponding values of the individual oxides. In addition, they are much easier to produce than NiO using magnetron cathode reinforcement.
- the proportion of vanadium is advantageously set so that 0.05 ⁇ . y ⁇ _ 0.35 and preferably y is approximately 0.07. If chromium is used, its proportion should be set so that 0.10 ⁇ _ y ⁇ _ 0.30 and preferably y is approximately 0.20.
- the thickness of the ion storage layer is preferably approximately 40 to 300 nm, the layer consisting of (Ce x Ti y ) O z having a thickness of approximately 100 to 300 nm and the layer consisting of (Ni x Me y ) O z having a thickness of approximately 40 to 150 nm.
- the cathodic electrochromic layer of W0 X can typically be 50 to 250 nm, preferably about 110 nm thick.
- the transparent electrode layer consists of a transparent metal oxide, in particular of fluorine-doped tin oxide or ITO, and is produced in such a way that a surface resistance of at most 20 ohms is achieved.
- the transparent ion conducting layer consists of silicon oxide, silicon nitride, tantalum oxide, aluminum oxide, zirconium oxide, titanium oxide and / or magnesium fluoride. It is within the scope of the invention to use mixtures of these materials instead of a single-layer homogeneous layer made of one of the specified materials, or to construct the ion-conducting layer in multiple layers from these materials or their mixtures.
- Silicon nitride has the advantage of a higher refractive index than silicon oxide, which avoids or at least reduces disruptive interference effects.
- the transparent ion-conducting layer should have a thickness of approximately 150 to 450 nm and should be produced as error-free as possible to reduce leakage currents.
- the reflection layer made of aluminum or an aluminum alloy.
- silver, gold and NiCr are fundamentally also suitable as materials for the reflection layer, tests have occasionally shown a slight deterioration in properties, in particular due to higher leakage currents, presumably due to a higher diffusion of metal atoms into the layer system. The best results were achieved with aluminum or high-aluminum alloys for the reflective layer. This should have a thickness of approximately 70 to 300 nm.
- the mirror according to the invention is preferably coated by means of (magnetron) cathode sputtering (sputtering), it being advantageous to produce the transparent electrode layer in another way.
- sputtering cathode sputtering
- a particular advantage of sputtering the ion storage layer according to the invention is that the required target materials are not ferromagnetic. It is therefore possible to work with conventional systems and with a high coating rate, which helps to reduce the production costs of the mirror.
- a particularly preferred method for producing an electrochromic mirror of the construction described above has the following steps:
- step (b) to step (d) contains water vapor with a partial pressure of 10 "6 to 10 " 5 mbar and the process from step (b) to step (e) is carried out without ventilation.
- At least four layers are thus applied in succession and without intermediate ventilation in a vacuum.
- the hydrogen from the residual gas, which is required for coloring, is built into the layer system.
- the mirror is surprisingly functional after coating and a few switching cycles with high voltages and does not need to be conditioned in a lengthy and complex manner.
- the ion conducting layer made of SiO 2 or the like is preferably produced by means of a double magnetron using the medium-frequency sputtering method if particularly low leakage currents are to be achieved. Layers produced in this way are surprisingly distinguished, despite their relatively high density, by a particularly high conductivity for protons with extremely low electronic conductivity.
- a problem with most prior art mirrors is the high leakage current through the system, which is approximately 0.1 A per volt of applied voltage in the range of 1 V to 10 V. is what corresponds to 0.1 to 1 A current through the system.
- This problem can be caused by defects in the ion-conducting layer, for which Si0 2 is generally used.
- Si0 2 is generally used.
- the system produced according to the invention which preferably also uses silicon dioxide, but also silicon nitride or mixtures of the two as material for the ion-conducting layer, these leakage currents do not appear.
- the electrical contact is made via the transparent electrode layer and the reflection layer.
- a resilient contact strip encompassing the edge of the electrochromic mirror can be used for contacting. Other methods of contacting are possible.
- the entire system is closed, as is known per se, by a protective coating, e.g. a protective varnish, and an edge seal against environmental influences.
- a protective coating e.g. a protective varnish
- the drawing figure shows a schematic, perspective view of the basic structure of an electrochromic mirror according to the invention.
- a transparent electrode layer 12 which consists of indium tin oxide, tin oxide doped with fluorine or the like, is applied to a transparent carrier 10, usually a glass carrier.
- This transparent electrode layer 12 is connected to an electrical contact strip 24 which extends along one of the sides of the mirror on the transparent electrode layer 12.
- the layers 14 and 18 are the two electrochromic functional layers of the electrochromic mirror.
- the layer 18 consists of a cathodically coloring material, for example WO x , MoO x , TiO x or mixtures thereof.
- Layers 14 and 18 are through a transparent ion conducting layer 16 is separated, which preferably consists of silicon oxide and / or silicon nitride or the like.
- This transparent ion-conducting layer 16 is not electronically conductive, but shows a low resistance for protons, which serve as charge carriers in the dyeing / decolorization process.
- the ion storage layer 14, which may be anodically electrochromic or non-coloring, consists of one of the cerium-titanium or nickel-transition metal (Me) mixed oxides according to the invention; a reflection layer 20 is applied to it, which preferably consists of aluminum.
- This reflection layer 20 also carries the second of the electrical contacts 26, which again extends over a long side of the electrochromic mirror, diametrically opposite the first electrical contact 24.
- This electrochromic mirror is produced according to a preferred method as follows:
- the transparent electrode layer 12 is first applied to a glass carrier 10, for example by pyrolysis, hydrolysis, sol-gel technology, sputtering or other customary coating processes.
- the ion storage layer 14 is applied to the glass substrate coated in such a conductive manner under vacuum by means of magnetron sputtering, then the transparent ion conducting layer 16, the cathodic electrochromic layer 18 and the reflection layer 20, without venting between the individual application steps.
- the system is provided with contacts and a protective coating made of a suitable paint.
- the ion storage layer and the cathodic electrochromic layer must have a sufficient thickness in order to achieve the desired reflection stroke.
- the layer thicknesses of the cathodic electrochromic layer, the ion storage layer, the transparent ion-conducting layer and the transparent electrode layer must be coordinated with one another in such a way that the highest possible reflection can be achieved in the decolored state. Interference effects can be used for this.
- the thicknesses of the ion storage layer and the cathodic electrochromic layer must be matched to one another, so that they have appropriate capacities to accommodate the protons which effect the coloring / decolorization process.
- SiO x 200 to 450 nm
- SiO x 200 to 450 nm
- glass was used as the support, coated with ITO as the electrode layer, the surface resistance of which was 10 ohms.
- the dimensions of the carrier were 10 cm x 10 cm or 20 cm x 5 cm.
- the substrate thus obtained was cleaned in an ultrasonic bath. An edge strip for later contacting the ITO layer (after the coating) was masked with vacuum-compatible adhesive tape. The substrate was then fed to the coating process by magnetron sputtering.
- the coating system was evacuated so that a water vapor partial pressure of 10 6 - 10 5 mbar was established.
- a Ce (50) Ti (50) alloy was used as the target for the sputtering process to apply a (Ce 05 Ti 05 ) O z layer (z ⁇ 1.75) as the ion storage layer 14.
- Argon was set at a flow of 300 ml / min as sputter gas and oxygen at a flow of 33 ml / min as reactive gas.
- a (Ce 05 Ti 05 ) O z layer with a thickness of 125 nm was produced.
- Si0 2 layer was then applied to the (Ce 05 Ti 05 ) O z layer as a transparent ion-conducting layer 16.
- the targets of the double cathode operated with medium frequency consisted of silicon.
- Argon was used as sputtering gas with Flow of 380 ml / min, oxygen set as a reactive gas with a flow of 47 ml / min.
- An Si0 2 layer with a thickness of 220 nm was produced.
- Tungsten was used as a target for the sputtering process to apply a W0 3 layer as the cathodic electrochromic layer 18.
- Argon was set at a flow of 190 ml / min as sputtering gas and oxygen at a flow of 200 ml / min as reactive gas.
- a W0 3 layer with a thickness of 110 nm was produced.
- a reflection layer 20 with aluminum as a target was applied.
- Argon was set as the sputtering gas at a flow of 60 ml / min.
- An aluminum layer with a thickness of 200 nm was produced.
- contact springs were clamped onto the ITO layer and the aluminum layer. After contacting, the electrochromic reflective layer system was switched with different voltages. Its reflection and switching time were measured.
- Ni (Ni 0 8 Cr 02 ) O z layer As the ion storage layer 14, a Ni (80) Cr (20) alloy was used as the target for the sputtering process.
- a (Ni 0 8 Cr 0 2 ) O z layer with a thickness of 100 nm was produced.
- a Si0 were then incubated with the process parameters as in Example 1 on the z (Ni Cr 0 8 0 2) O layer 2 layer of 220 nm thickness, a W0 3 - layer 50 nm thick and a Alumini ⁇ um harsh with 100 nm Thickness generated.
- the cathodic electrochromic layer 18 was first applied to the substrate, specifically a WO 3 layer with a thickness of 50 nm.
- the process parameters corresponded to those of the Example 1.
- an SiO 2 layer with a thickness of 225 nm was produced.
- Ni (93) V (7) alloy was used as the target for the sputtering process.
- An argon-hydrogen mixture of 90% by volume argon and 10% by volume hydrogen (H 2 ) and with a flow of 200 ml / min was set as the sputter gas, and oxygen as the reactive gas with a flow of 100 ml / min.
- a (Ni 0 93 Cr 0 07 ) O z layer with a thickness of 70 nm was produced.
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Multimedia (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU47713/97A AU4771397A (en) | 1996-10-01 | 1997-09-30 | Electrochromic mirror and method for producing an electrochromic mirror |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19640515A DE19640515A1 (de) | 1996-10-01 | 1996-10-01 | Elektrochromer Spiegel und Verfahren zum Herstellen eines elektrochromen Spiegels |
| DE19640515.7 | 1996-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998014824A1 true WO1998014824A1 (fr) | 1998-04-09 |
Family
ID=7807587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE1997/002241 Ceased WO1998014824A1 (fr) | 1996-10-01 | 1997-09-30 | Miroir electrochrome et procede de production d'un miroir electrochrome |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU4771397A (fr) |
| DE (1) | DE19640515A1 (fr) |
| WO (1) | WO1998014824A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7604717B2 (en) | 1999-05-20 | 2009-10-20 | Saint-Gobain Glass France | Electrochemical device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2793888B1 (fr) * | 1999-05-20 | 2002-06-28 | Saint Gobain Vitrage | Dispositif electrochimique |
| EP1739476A1 (fr) | 2005-07-01 | 2007-01-03 | Flabeg GmbH & Co. KG | Elément électrochromique |
| DE102006017356B4 (de) * | 2006-04-11 | 2015-12-17 | Flabeg Deutschland Gmbh | Verfahren zur Herstellung eines Mehrschichtsystems auf einem Träger, insbesondere in einem elektrochromen Element |
| JP5764098B2 (ja) * | 2012-07-17 | 2015-08-12 | 株式会社ホンダロック | 防眩ミラー、車両および防眩ミラーの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3123697A1 (de) * | 1980-06-19 | 1982-02-11 | Nippon Kogaku K.K., Tokyo | "elektrochromes ganzfestkoerper-anzeigebauelement" |
| JPS5843431A (ja) * | 1981-09-10 | 1983-03-14 | Toppan Printing Co Ltd | エレクトロクロミツク表示素子 |
| JPS59228630A (ja) * | 1983-06-10 | 1984-12-22 | Canon Inc | 全固体型エレクトロクロミツク素子 |
| JPS59228629A (ja) * | 1983-06-10 | 1984-12-22 | Canon Inc | 全固体型エレクトロクロミツク素子 |
| WO1992021052A1 (fr) * | 1991-05-16 | 1992-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Valve de lumiere electrochromique, son procede de production et son utilisation |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119331A (ja) * | 1982-12-25 | 1984-07-10 | Canon Inc | エレクトロクロミツク素子 |
| JP2512880B2 (ja) * | 1987-04-03 | 1996-07-03 | 株式会社ニコン | 第3電極層から電極取出しを行なつたec素子 |
| US5241411A (en) * | 1987-07-02 | 1993-08-31 | Saint-Gobain Vitrage | Electrochromic variable transmission glazing |
| DE3802852A1 (de) * | 1988-02-01 | 1989-08-03 | Leybold Ag | Einrichtung fuer die beschichtung eines substrats mit einem material, das aus einem plasma gewonnen wird |
| CA1313562C (fr) * | 1988-08-17 | 1993-02-09 | Nikon Corporation | Dispositif electrochromique |
| US5442478A (en) * | 1990-10-30 | 1995-08-15 | The Regents, University Of California | Electrochromic device using mercaptans and organothiolate compounds |
| US5111328A (en) * | 1990-12-12 | 1992-05-05 | Ford Motor Company | Electromagnetic radiation modulating device |
| AU675822B2 (en) * | 1992-12-24 | 1997-02-20 | Sun Active Glass Electrochromics, Inc. | Electrochromic devices with optical tuning layers |
| DE4417220A1 (de) * | 1994-05-17 | 1995-11-23 | Flachglas Ag | Elektrochrome Scheibenanordnung |
| JPH09152634A (ja) * | 1995-03-03 | 1997-06-10 | Canon Inc | エレクトロクロミック素子及びその製造方法 |
-
1996
- 1996-10-01 DE DE19640515A patent/DE19640515A1/de not_active Ceased
-
1997
- 1997-09-30 AU AU47713/97A patent/AU4771397A/en not_active Abandoned
- 1997-09-30 WO PCT/DE1997/002241 patent/WO1998014824A1/fr not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3123697A1 (de) * | 1980-06-19 | 1982-02-11 | Nippon Kogaku K.K., Tokyo | "elektrochromes ganzfestkoerper-anzeigebauelement" |
| JPS5843431A (ja) * | 1981-09-10 | 1983-03-14 | Toppan Printing Co Ltd | エレクトロクロミツク表示素子 |
| JPS59228630A (ja) * | 1983-06-10 | 1984-12-22 | Canon Inc | 全固体型エレクトロクロミツク素子 |
| JPS59228629A (ja) * | 1983-06-10 | 1984-12-22 | Canon Inc | 全固体型エレクトロクロミツク素子 |
| WO1992021052A1 (fr) * | 1991-05-16 | 1992-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Valve de lumiere electrochromique, son procede de production et son utilisation |
Non-Patent Citations (4)
| Title |
|---|
| AZENS A ET AL: "Optical and electrochemical properties of dc magnetron sputtered Ti-Ce oxide films", APPLIED PHYSICS LETTERS, vol. 68, no. 26, 24 June 1996 (1996-06-24), pages 3701 - 3703, XP000599586 * |
| MACEDO M A ET AL: "Sol-gel electrochromic device; Code: F8", JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, vol. 2, no. 1/02/03, 1 January 1994 (1994-01-01), pages 667 - 671, XP000463623 * |
| PATENT ABSTRACTS OF JAPAN vol. 007, no. 125 (P - 200) 31 May 1983 (1983-05-31) * |
| PATENT ABSTRACTS OF JAPAN vol. 009, no. 105 (P - 354) 9 May 1985 (1985-05-09) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7604717B2 (en) | 1999-05-20 | 2009-10-20 | Saint-Gobain Glass France | Electrochemical device |
Also Published As
| Publication number | Publication date |
|---|---|
| AU4771397A (en) | 1998-04-24 |
| DE19640515A1 (de) | 1998-04-09 |
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