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WO1998011460A1 - Production method of waveguide type optical device - Google Patents

Production method of waveguide type optical device Download PDF

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Publication number
WO1998011460A1
WO1998011460A1 PCT/JP1996/002631 JP9602631W WO9811460A1 WO 1998011460 A1 WO1998011460 A1 WO 1998011460A1 JP 9602631 W JP9602631 W JP 9602631W WO 9811460 A1 WO9811460 A1 WO 9811460A1
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WO
WIPO (PCT)
Prior art keywords
optical
waveguide
substrate
manufacturing
type
Prior art date
Application number
PCT/JP1996/002631
Other languages
French (fr)
Japanese (ja)
Inventor
Hideaki Takano
Tatemi Ido
Mari Koizumi
Toshinori Hirataka
Hiroaki Inoue
Masakazu Sagawa
Ryoji Inaba
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to JP51347198A priority Critical patent/JP3644037B2/en
Priority to PCT/JP1996/002631 priority patent/WO1998011460A1/en
Publication of WO1998011460A1 publication Critical patent/WO1998011460A1/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4249Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/30Optical coupling means for use between fibre and thin-film device

Definitions

  • the present invention relates to a waveguide type optical element used for optical communication, and more particularly, to an optical coupling between an optical waveguide unit made of an organic material and an optical component having a function of injecting or emitting light to or from the optical waveguide unit. For easily realizing the above.
  • the input or output interface needs to be an optical fiber. That is, it is necessary to mount the waveguide type optical element and the optical fiber. There are almost no exceptions in currently marketed waveguide-type optical elements, and the above mounting is performed by a method called active alignment.
  • a case of a semiconductor laser will be described.
  • a semiconductor laser is fixed to a table, and a current is applied to emit light.
  • an optical fiber serving as an input or output interface is brought close to the end face of the semiconductor laser.
  • the light intensity of the light emitted from the semiconductor laser, which is incident on the optical fiber, is monitored, and the position of the optical fiber is finely adjusted forward, backward, left, right, up and down so that the light intensity is maximized.
  • the agent is poured in to fix the position of the optical fiber.
  • the optical power puller is an optical component that splits the light energy passing through one optical fiber into two or more optical fibers. Typically, it consists of a waveguide that is Y-shaped in the light propagation direction.
  • the procedure of the optical power blur is the same as that of the semiconductor laser, except that the optical power blur does not emit light. That is, it is a passive element. Therefore, first, one optical fiber is moved closer to the waveguide so that light enters the waveguide, and two optical fibers are moved closer to the output side.
  • the intensity of the light entering the two optical fibers on the emission side is monitored, and the positions of a total of three optical fibers, including the one on the incident side, as well as the two optical fibers, are located in front, back, left and right.
  • the light intensity is maximized while finely adjusting it up and down, and the adhesive is poured into the optical fiber. Fix the position.
  • passive alignment refers to a method in which the optical fiber and the waveguide are fixed only by simple alignment. In other words, instead of causing the element itself to emit light or directing light, as in the case of active alignment, it is a method of fixing only the mutual positional relationship in the structure.
  • a V-groove is formed in advance on the Si substrate by anisotropic etching so that the position of the optical fiber can be determined precisely, and this is used as a fiber guide groove.
  • the fiber guide groove has a depth of several tens of microns, even if an optical waveguide is to be provided as it is, most of the optical waveguide material flows into the fiber guide groove, and a precise light guide is provided near the groove. Waveguide cannot be created. Therefore, the substrate having the fiber guide groove is flattened by the following method.
  • a Si02 film is formed on another Si substrate surface by thermal oxidation, the Si02 film side is superimposed on the substrate surface provided with the fiber guide groove, and a high-frequency electric field is applied to bond the two substrates. Fit together. Subsequently, a heat treatment at a temperature of about 100 ° C. is performed to increase the adhesive strength. Thereafter, the Si substrate on the side provided with the thermal oxide film is ground, and the thickness of the Si substrate is reduced to the thickness of the thermal oxide film. After that, the remaining Si on the Si substrate side is immersed in the selective etchant to completely dissolve it, and the surface is planarized by allowing Si02 to appear on the surface.
  • an organic optical waveguide is provided using a normal process, and the organic optical waveguide and Si 02 in the groove portion are removed by reactive ion etching to expose the groove.
  • An optical fiber is inserted into the groove and solidified with the adhesive as it is to complete the optical device.
  • the optical element itself is not particularly devised. Therefore, the optical element itself can be easily manufactured, but there is a problem that it takes time to assemble the optical element with the optical fiber. That is, when fine adjustment of the position of a plurality of optical fibers is required, as in the case of the optical power blur shown in another example of the above conventional method, there is a problem that the assembling time significantly increases. For example, split ⁇ signal light into two If we call a Y-branch element with a function of 1: 2 force, the difficulty of mounting the above optical fiber becomes more severe as the number of input / output devices increases. With a 1:16 force bra, it is almost impossible to make a fine adjustment of the position of a total of 17 optical fibers. For this reason, from 1: 2 force blur to 1:16, there is a problem that the output variation increases and the device characteristics are degraded, and the cost of the optical device becomes high.
  • the mounting with the optical fiber is easy, and the assembly time in the active alignment does not increase remarkably; the substrate having the fiber guide groove is flattened. It has not been put into practical use because it takes time for the process of conversion. That is, the Si substrate on the side where the thermal oxide film is provided is ground, the thickness of the Si substrate is reduced to about the thickness of the thermal oxide film, and the remaining Si on the Si substrate side is immersed in a selective etchant. It takes a long time to completely dissolve and make the Si02 appear on the surface, which makes it difficult to implement optical fiber mounting by passive alignment.
  • an object of the present invention is to provide a method for simplifying a step of flattening a substrate having a fiber guide groove, and to realize easy optical fiber mounting by passive alignment.
  • a method is proposed in which a film made of an organic material is adhered to a substrate having a fiber guide groove, thereby making the surface of the substrate easier and flatter than before. I do.
  • a method is proposed in which a film made of the organic material is also used as a lower clad of an optical waveguide provided on the film.
  • FIG. 1 is an external perspective view showing one embodiment of the present invention.
  • FIG. 2 is a detailed explanatory view of a manufacturing method according to an embodiment of the present invention.
  • 3 to 8 are explanatory views of another manufacturing method according to the embodiment of the present invention.
  • 9 to 12 are explanatory diagrams of another embodiment according to the present invention.
  • FIG. 13 is an explanatory diagram of another manufacturing method according to one embodiment of the present invention.
  • FIG. 14 and FIG. 15 are explanatory diagrams of another embodiment according to the present invention.
  • FIG. 1 is an external perspective view showing an embodiment of the present invention. First, the components of the present invention and the outline of the manufacturing method are shown, and then the detailed manufacturing method is described.
  • the present invention includes a substrate 1, an optical fiber guide groove 2 provided on the surface of the substrate, a polyimide film 3, an organic optical waveguide 4, and an optical fiber 6.
  • the optical fiber guide groove 2 provided on the surface of the substrate 1 can be flattened much more easily than in the past. Once planarized by this method, it is easy to provide the organic optical waveguide 4 using a normal process. Thereafter, the removed portion 5 indicated by hatching is removed, the optical fiber 6 is inserted into the optical fiber guide groove 2, and the optical fiber 6 is solidified with an adhesive to complete the waveguide type optical element.
  • FIG. 2 illustrates the production method of the present invention in more detail.
  • FIG. 2 (a) shows a process T for attaching the film of the present invention.
  • the thickness of the Si substrate 10 is 1 mm.
  • V-grooves 20 are formed on the surface of the Si substrate 10 as optical fiber guide grooves.
  • the size of the V-groove 20 is such that when a single-mode optical fiber having an outer diameter of 125 ⁇ m fits into this V-groove 20, the height of the core of the optical fiber from the substrate surface becomes the organic optical waveguide.
  • the height of the V-groove 20 is about ⁇ 20 microns, and the depth is about 60 microns.
  • the length of the V-groove 20 was 4 mm so that the optical fiber could be sufficiently supported.
  • the method of forming the V-groove 20 is well known, but will be briefly described here.
  • Base A film made of an inorganic material is formed on the plate surface by a CVD method or the like, a rectangular hole is formed by a usual photoresist process, and only the inorganic material in the hole is selectively etched to produce a mask.
  • a K0H solution which is an anisotropic etchant of Si, only the surface of the Si substrate where holes are opened is etched into a V-groove type.
  • the organic waveguide material is applied on the Si substrate 10 with the V-groove 20 by a normal spin coating method, most of the material flows into the V-groove 20, and thus the vicinity of the V-groove 20 It is extremely difficult to produce an optical waveguide parallel to the substrate surface in the above. This is because the size of the core of the organic waveguide is about 10 microns, whereas the width and depth of the V-groove 20 are one digit larger.
  • a polyimide film 30 having a thickness of 10 ⁇ m is attached to the Si substrate 10 on which the V-groove 2 is formed by using an adhesive.
  • the V-groove 2 can be easily flattened as compared with the conventional method.
  • FIG. 2 (b) shows a step of providing an organic waveguide on a flattened substrate.
  • an organic waveguide use here is made of fluorinated polyimide with a relative refractive index difference of 0.3% between the core and clad on a flattened substrate, and the core is 8 microns in thickness and width.
  • a single-mode organic optical waveguide with a wavelength of 1.55 microns is provided.
  • Polyimide is one of the heat-resistant polymer materials, has a proven track record in electronic devices, etc., and is one of the reliable materials. Polyimide is a near-infrared light used in optical communications.
  • Fluorinated polyimide hardly absorbs near-infrared light by fluorinating part of the molecular structure of polyimid Kobayashi et al., “Single Mode Polyimide Optical Waveguide”, IEICE Technical Report, 0ME-95-52, 0PE95-93 (1995) See -10).
  • a lower cladding material (lower refractive index, for example, 1.540) is applied to the polyimide film by a spin coating method for a predetermined thickness (10 microns), and then is applied in a nitrogen atmosphere.
  • the lower clad is manufactured by applying a heat treatment of 80 degrees for 1 hour.
  • the core material (higher refractive index, For example, 1.5 4 5) is also manufactured by the spin coating method (thickness: 8 ⁇ m).
  • a metal mask such as a Ti thin film that can be adhered by EB vapor deposition is manufactured by a normal photoresist process, and reactive ion etching of oxygen gas or the like is performed. Perform anisotropic etching. Used Ti mask is removed with buffered hydrofluoric acid, etc., and the upper clad material (low refractive index, side, for example, 1.540) is again produced by the spin coating method (film thickness 10 Micron).
  • the organic film according to the present invention needs to withstand all heat treatments in the process of manufacturing the organic optical waveguide.
  • an organic optical waveguide after spin coating, for example, in the case of fluorinated polyimide, baking is performed at 380 ° C.
  • the problem is that the organic film in the flat crucified portion melted unevenly. This is because if the substrate is bent in this manner, an optical waveguide parallel to the substrate cannot be manufactured.
  • the present invention can be carried out as long as the organic film material is a polyimide film which is one of heat-resistant polymer materials. Cannot be implemented.
  • Tg the glass transition point
  • the organic film used in the present invention is a minimum condition
  • Tp, Tg, and Tf for organic materials tend to be one of the following two types.
  • A Organic material with Tp, Tg, Tf force of about 100 degrees to about 200 degrees
  • Group A includes, for example, polymethyl methacrylate, polycarbonate, Organic materials for optics such as styrene are included.
  • Tp is about 80 degrees
  • Tg is about 100 degrees
  • Tf is about 150 degrees.
  • the group B includes, for example, heat-resistant polymer materials having an aromatic ring or a crosslinked structure, such as polyimide and polysiloxane.
  • Tp is about 350 degrees and Tg and Tf are both 400 degrees or more.
  • the group B that is, the Tg and Tf are higher. This is because if the material having the higher Tg and Tf is used in the group B, an optical waveguide made of the material of the group A, an optical waveguide made of the material of the group B, or a combination thereof is formed on the film. This is because an optical waveguide consisting of the above also satisfies the above desirable conditions.
  • Fig. 2 (c) shows a metal mask 50 such as Ti with a hole in the removed portion immediately above the V-groove 20 to remove the organic optical waveguide and the film made of organic material directly above the V-groove 20.
  • FIG. 2 (d) shows a process in which the organic optical waveguide immediately above the V-groove 20 and the film made of an organic material are removed by reactive ion etching using oxygen plasma, and the V-groove 20 appears.
  • a single-mode optical fiber 60 having an outer diameter of 125 ⁇ m is inserted into the V-groove 20 that appears, the height of the core of the optical fiber 60 from the substrate surface becomes the center of the organic optical waveguide 40. Height from the substrate surface.
  • An optical element can be completed by fixing it with an adhesive.
  • the coupling loss increases by more than 10 dB when the core center is shifted by about 5 microns.
  • Ie multi-mode Single mode waveguides are more strict than the core center deviation.
  • the present invention since the core centers can be aligned by the simple method as described above, the present invention is particularly effective for a single-mode optical waveguide.
  • the present invention by providing a flattening method that is simpler than the conventional method, in which a film made of an organic substance is attached to a substrate having a fiber guide groove, light by passive alignment is provided. Facilitates fiber mounting.
  • each of the methods shown in FIG. 2 may use the following method.
  • FIG. 3 shows another method of attaching a film made of an organic material to a substrate. That is, the polyimide film 30 is temporarily attached to another substrate 7 (FIG. 3 (a)). Next, the above-mentioned separate substrate with a film is attached with the hollow film 30 facing the substrate 1 () (FIG. 3 (b)). At this time, the relationship between the adhesive force F7 of the polyimide film 30 to another substrate 7 and the adhesive force F10 to the substrate 10 is set so that F10> F7. Finally, using the difference in the adhesive strength of F10> F7, only the separate substrate 7 is peeled off (Fig. 3 (). With this method, the polyimide film 30 does not sag in the V-groove 20) There is an effect that it can be stuck flat.
  • adhesives having different adhesive forces may be used.
  • an extremely permeable solvent such as hydrofluoric acid
  • hydrofluoric acid By immersing the substrate with the film in an extremely permeable solvent such as hydrofluoric acid to weaken the adhesive strength with another substrate 7, it is possible to create an adhesive strength of F10> F7.
  • the same adhesive since the same adhesive may be used, it is effective when there are few kinds of adhesives that can be used.
  • an electron beam or ultraviolet light is selectively irradiated to cause a chemical change only in some organic materials, and a refractive index distribution is created using the refractive index change accompanying the change.
  • the end face may be formed by dicing.
  • FIG. 4 (a) shows a state in which an end face is formed by the dicing cut 71.
  • the organic optical waveguide 40 and the polyimide film 30 on the V-groove 20 are physically removed from the state of FIG. 4 (a) by tweezers or the like. I just need.
  • the organic optical waveguide 40 and the polyimide film 30 on the V-groove 20 have a smaller bonding area with the substrate 10 because of the V-groove type. This is because the adhesive strength is relatively weak.
  • This method is simpler than the end face formation by reactive etching. This is because, in any case, dicing is used to scribe a Si substrate of about 1 mm in the element fabrication process. That is, if the end face forming step and the element forming step are performed at the same time by dicing, one step can be omitted, and there is an effect that the process can be further simplified.
  • FIG. 5 (a) shows an external perspective view
  • FIG. 5 (b) shows a cross-sectional view taken along line A-— '.
  • the V-grooves 20 are all composed of Si (1 1 1) planes. I have.
  • Another position of the dicing cut 71 is a position where dicing is performed on the slope of the V-groove (FIG. 7 (a)).
  • the distance between the organic optical waveguide 40 and the optical fiber 60 can be reduced to zero if the thickness of the dicing blade is 63 ⁇ m or more above the slope. That is, the thickness of the dicing blade
  • the optical coupling loss can be minimized.
  • the present invention is effective for all passive devices that have been reported so far, such as optical power plugs and filters. This is because, in the case of the present invention, since the alignment with the fiber is completely passive, the passive element has no special meaning and the fiber can be mounted without any change. .
  • the present invention has a dramatic effect as compared with the conventional active alignment method, especially when the number of input / output optical fibers is large.
  • Figure 8 shows a 1: 4 force bra for reference. 1: From a two-stroke brush]: At the point of reaching 16, the variation of the output light depends only on the precision of the groove formation. Therefore, the deterioration of the element-characteristics does not occur because the number of input / output lines increases. .
  • the alignment with the fiber is completely passive, so it takes only a short time, and as a result, the dramatic increase in the number of input / output lines does not occur.
  • the present invention is effective for passive elements, particularly for passive elements having a large number of input / output lines.
  • the present invention is even more effective in active devices that utilize the energy from the electrodes to alter the physical properties of the waveguide. i
  • 1 in Figure 9 1 in Figure 9:
  • FIG. 2 shows a heat effect type optical switch of FIG.
  • an electrode 72 is provided on a waveguide, and a current flows through only one of the electrodes, so that a heater section 73 provided immediately above the waveguide heats only one of the electrodes.
  • the refractive index of the organic optical waveguide on one side of the 1: 2 configuration decreases, and light propagates only to the unheated waveguide (for example, GF is a heat effect type optical switch).
  • the input and output fibers must be fine-tuned and fixed so that the optical output is maximized by moving the active part of the device. For this reason, it is necessary to control the fine adjustment in addition to the total number of input and output fibers as well as the number of patterns to determine the type of electric energy to be applied to the electrodes. Become difficult.
  • the alignment with the fiber is completely passive in this case, it is sufficient regardless of the number of electric energy patterns. That is, since the present invention can be carried out in the same manner as in the case of the passive element, the alignment of the fiber of the optical element utilizing the effect of the electric energy by the electrodes can be easily carried out, and is more effective than the passive element.
  • the substrate is a Si substrate having excellent thermal conductivity and easy to mount the fiber, heat is not trapped, so that the switching beads are faster, which is more effective. is there.
  • the electrode is usually provided at the bottom of the organic waveguide, but may be formed below the organic waveguide. This is because if there is a step on the top of the organic waveguide, unevenness in the film thickness and blurring of the focus when applying the photoresist will occur, and precise pattern accuracy cannot be obtained. For example, if the step is about 3 microns, a pattern width error of about 3 microns occurs above and below the step. However, by forming the electrodes below the organic waveguide, it is possible to prevent a step from occurring at the time of forming the electrode pattern, so that the error in the pattern width can be reduced to 0.5 ⁇ m or less, which is a normal value.
  • FIG. 10 is an explanatory diagram of a manufacturing method for forming an electrode below an organic waveguide.
  • FIG. 10 (a) is a view in which after V grooves 20 are flattened with a polyimide film 30, an electrode material is deposited, and an electrode pattern is formed by ordinary photolithography. Since the thickness of the electrode material is as small as about 1 micron at most, the organic optical waveguide 40 can be manufactured without any problem (FIG. 10 (b)).
  • FIG. 10 (c) shows a metal mask made of a metal such as Ti with a hole in the removed part to remove the organic optical waveguide and the film made of an organic material directly above the V-groove 20 and near the electrode.
  • FIG. 10 (c) shows a metal mask made of a metal such as Ti with a hole in the removed part to remove the organic optical waveguide and the film made of an organic material directly above the V-groove 20 and near the electrode.
  • FIG. 0 (d) shows that the film made of the organic optical waveguide and the organic material immediately above the V-groove 20 and near the electrode is removed by reactive ion etching using oxygen plasma, and the V-groove 20 and the electrode 7 are removed. Step 2 appears.
  • the electrode itself becomes a metal mask, and the film made of organic material immediately below the electrode remains. An electrode pad is formed, but the part without the electrode pattern is etched and the substrate surface appears.
  • the polyimide film 30 plays a role not only as a substrate having a flat iU but also as a heat insulator between the substrate 10 and the lower heater of the optical waveguide.
  • the problem of film thickness unevenness and defocusing at the time of photo resist coating can be solved without increasing the number of processes by merely changing the order of fabrication, and the precision of the electrode can be improved. There is an effect that bang accuracy can be obtained.
  • a waveguide type semiconductor optical device as shown in FIG. 11 can be integrated by using the manufacturing method shown in FIG. That is, the waveguide type semiconductor optical device 76 can be passively mounted on the electrode pad 75 by reflow bonding.
  • the direction parallel to the substrate is Hashiki et al., “Installation of LL by passive alignment on PLC platform, mounting of monitor and PD” "Institute of Electronics, Information and Communication Engineers, General Conference, 1996, C-206, Ito et al.,” Passive line technology for optical devices ", Journal of Japan Institute of Circuit Packaging, vol. 10, No. 5 (1995), 302 302 See).
  • a transmission / reception optical circuit can be realized by using one of the optical elements 76 as a laser and the other as a photodetector.
  • M Transmit / Receive Optical Circuit ", IEICE Institute of Electronics, Information and Communication Engineers, University of Tokyo ⁇ , SC-2-5).
  • polyimide film 30 needs to be a heat-resistant polymer.
  • FIG. 12 (a) shows a conventional method.
  • semiconductor The element interval a of the optical element array 78 is designed to be the same as the interval b of the optical fiber array 61, and is usually at an interval of 25 microns.
  • FIG. 12 (b) illustrates the present invention.
  • 11 is different from FIG. 11 in that there is an organic optical waveguide array 41 having different waveguide intervals at the input / output ends, and an array-type semiconductor optical element 7 8 is provided on the side of the organic optical waveguide array 41 where the waveguide interval is smaller. There is a configuration.
  • the element interval a of the semiconductor optical element array can be made smaller than the interval b of the optical fiber array 61, and material saving of the array type optical element can be achieved.
  • the present embodiment proposes a device manufacturing method in which a film 31 made of an organic material to be attached for flattening a substrate is also used as a lower clad of an organic optical waveguide.
  • FIG. 13 (a) shows a step of attaching to a substrate
  • FIG. 13 (b) shows a step of manufacturing a waveguide.
  • the subsequent device fabrication process is the same as in the first embodiment.
  • the organic film 31 to be adhered to the substrate 10 has a refractive index equal to or smaller than the cladding material of the organic optical waveguide provided thereon.
  • the material of the organic film 31 is a film-like fluorinated polyimide (refractive index: 1.540).
  • One spin coating step can be reduced, and the organic optical waveguide 42 can be manufactured extremely easily.
  • the proposal according to the present embodiment has an effect that a buffer layer having a thickness of about 20 ⁇ m, which is usually provided to reduce propagation loss, can be manufactured much more easily than in the past.
  • the maximum film thickness per one time in which the in-plane distribution is excellent by the spin coating method is about 10 micron.
  • the film can be shared with the lower clad of the organic optical waveguide, for example, if a 20 micron film is attached, the thickness of the film itself will increase due to the increase in thickness, and there will be the advantage that the grooves can be flattened without sagging, while there is the advantage that a thicker buffer layer can be easily obtained. .
  • the present invention has the effect of facilitating the mounting on the optical fiber as compared with the related art since the present invention has the optical fiber guide groove. .
  • the present embodiment takes advantage of this effect to provide an unprecedented photon.
  • the configuration may be as shown in FIG. Therefore, the present invention is particularly useful for a system that requires a large-scale optical power puller, because the scale of the optical component can be easily increased.
  • the optical fiber becomes complicated. Also in this case, as shown in FIG. 15, when the optical waveguide group 101 is provided and functions as an optical connector, it is possible to simplify the mounting complexity.
  • the optical switch described in the fourth embodiment can be easily used for the following system.
  • a protection switch or an optical cross-connect device for example, a protection switch or an optical cross-connect device.
  • protection switch is a general term for a function in which a transmission line is given redundancy in advance so that the transmission line can be operated without trouble by switching the switch in the event of a failure, thereby improving the reliability of the entire transmission line.
  • low cost is desired for protection switches such as optical subscriber lines.
  • the use of the optical switch according to the present invention is effective in this respect.
  • a cross-connect device virtually divides the transmission bandwidth of an installed physical transmission path into several path capacities.
  • the difficulty with this cross-connect device is that it must be dropped to a 150 Mbps signal, for example, because the switch is an electrical switch. Therefore, especially for switching the path of the transmission line of the Gbps class, a DEMUX device for reducing the signal speed to that extent and a MUX device for increasing the switched signal to the Gbps class become huge.
  • the optical switch described in the fourth embodiment is used, switching can be performed at a signal speed of a pass class, and as a result, the DEMUX device and the MUX device are not required, and the overall size and size are reduced. Can be expected.
  • This system is called an optical cross-connect system.
  • the key to the cost reduction is the cost of the optical switch.
  • a 4-input 4-output optical switch or an 8-input 8-output optical switch is used.
  • Conventional optical switches have problems with fiber mounting, as described above, and could not be realized at low cost.
  • fiber mounting can be easily performed, so that it can be realized at low cost.
  • the configuration may be as shown in FIG. 14 or FIG. Therefore, the present invention is particularly effective for other optical switch application systems, because it is easy to increase the scale of optical components and to easily mount active elements with fibers.
  • the description has been made using the optical fiber as the optical component.
  • the optical component has a function of transmitting and receiving light parallel to the substrate.
  • the Si-V groove was used, but a glass material, an organic material, or the like in which the similar groove was precisely processed may be used.
  • an optical fiber mounting by passive alignment can be realized very easily by a simple flattening method of attaching a film made of an organic material, and the industrial applicability is great.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

A method of flattening a substrate, in which an organic film is bonded to the substrate having a fiber guide groove, and alternatively the organic film is used also as a lower cladding of an optical waveguide disposed on the film. As the process step for flattening the substrate having the fiber guide groove, this easy method of bonding an organic film facilitates the connection of optical fibers by passive alignment.

Description

明細書  Specification
導波路型光素子の製造方法  Manufacturing method of waveguide type optical element
技術分野 Technical field
本発明は光通信に用いられる導波路型光素子に係り、 特に有機材料からなる光 導波手段と、 前記光導波手段に光を入射または出射する機能を必須とする光部品 との、 光結合を容易に実現する手段に関する。  The present invention relates to a waveguide type optical element used for optical communication, and more particularly, to an optical coupling between an optical waveguide unit made of an organic material and an optical component having a function of injecting or emitting light to or from the optical waveguide unit. For easily realizing the above.
背景技術 Background art
光通信では、 信号が光ファイバ中を伝搬する。 そのため、 光信号の制御を目的 とした導波路型光素子は、 入射または出射インタ一フェイスが光ファイバである 必要がある。 すなわち、 導波路型光素子と光ファイバとの実装が必要である。 現在市販されている導波路型光素子はほとんど例外なく、 アクティブァライメ ン卜と呼ばれる方法で上記実装を行っている。  In optical communications, signals propagate through optical fibers. Therefore, in the waveguide type optical element for controlling an optical signal, the input or output interface needs to be an optical fiber. That is, it is necessary to mount the waveguide type optical element and the optical fiber. There are almost no exceptions in currently marketed waveguide-type optical elements, and the above mounting is performed by a method called active alignment.
アクティブァライメント方法の一例として半導体レーザの場合をとりあげる。 まず半導体レーザを台に固定し、 電流を与えて発光させる。 次に入射または出射 ィンタ一フェイスとなる光ファイバを前記半導体レーザの端面に近づける。 半導 体レーザから出てきた光のうち前記光ファイバ中に入射してくる光強度をモニタ し、 光フアイバの位置を前後左右上下に微調整しながら前記光強度が最大となる ようにし、 接着剤を流し込んで光ファイバの位置を固定するのである。  As an example of the active alignment method, a case of a semiconductor laser will be described. First, a semiconductor laser is fixed to a table, and a current is applied to emit light. Next, an optical fiber serving as an input or output interface is brought close to the end face of the semiconductor laser. The light intensity of the light emitted from the semiconductor laser, which is incident on the optical fiber, is monitored, and the position of the optical fiber is finely adjusted forward, backward, left, right, up and down so that the light intensity is maximized. The agent is poured in to fix the position of the optical fiber.
アクティブァライメント方法の他の例として、 光力ブラをとりあげる。 光力プ ラとは、 1本の光ファイバを通る光エネルギーを、 2本以上の光ファイバに分岐 する光部品のことをいう。 典型的なものとしては、 光の伝搬方向に Y字型をした 導波路で構成される。 前記光力ブラの場合も、 前記半導体レーザの場合と同様の 手順であるが、 異なる点は光力ブラ自体が発光しないことである。 すなわち受動 素子である。 したがって、 まず入射側に 1本の光ファイバを導波路に光が入射す るように大体近付け、 出射側に 2本の光ファイバも大体近付ける。 出射側の 2本 の光ファイバ中に入射してくる光強度をモニタし、 前記 2本の光ファイバのみな らず、 入射側の 1本も含めて合計 3本の光ファイバの位置を前後左右上下に微調 整しながら前記光強度が最大となるようにし、 接着剤を流し込んで光フアイバの 位置を固定するのである。 Another example of an active alignment method is a light bra. The optical power puller is an optical component that splits the light energy passing through one optical fiber into two or more optical fibers. Typically, it consists of a waveguide that is Y-shaped in the light propagation direction. The procedure of the optical power blur is the same as that of the semiconductor laser, except that the optical power blur does not emit light. That is, it is a passive element. Therefore, first, one optical fiber is moved closer to the waveguide so that light enters the waveguide, and two optical fibers are moved closer to the output side. The intensity of the light entering the two optical fibers on the emission side is monitored, and the positions of a total of three optical fibers, including the one on the incident side, as well as the two optical fibers, are located in front, back, left and right. The light intensity is maximized while finely adjusting it up and down, and the adhesive is poured into the optical fiber. Fix the position.
一方、 最近では、 パッシブァライメン トと呼ばれる方法も研究されている。 こ の方法は、 光ファイバと導波路との単純な位置合わせのみで固定する方法のこと をいう。 すなわちアクティブァライメン トの様に素 ί-自体を発光させたり、 光を 人射するのではなく、 構造上の相互位置関係のみで固定する方法である。  On the other hand, recently, a method called passive alignment has been studied. This method refers to a method in which the optical fiber and the waveguide are fixed only by simple alignment. In other words, instead of causing the element itself to emit light or directing light, as in the case of active alignment, it is a method of fixing only the mutual positional relationship in the structure.
パッシブァライメント方法の一例をあげる。 まず、 光ファイバの位置を精密に 決められるよう、 Si基板にあらかじめ異方性エッチングにより V溝を作製し、 フ アイバガイ ド溝とする。 しかし、 ファイバガイ ド溝は数十ミクロンの深さを有し ているために、 このまま光導波路を設けようとしても、 光導波路材料の大部分が ファィバガイ ド溝へ流れ込み、 前記溝近傍では精密な光導波路を作製することが できない。 そのため、 次の方法によりファイバガイ ド溝を有する基板を平坦化す る。 すなわち、 まず別の Si基板表面に熱酸化により Si02膜を作製し、 前記 Si02 膜側を、 ファイバガイ ド溝が設けられた基板表面に重ね合わせ、 高周波電界を印 加して 2つの基板を貼りあわせる。 続いて温度が〗 1 0 0度程度の熱処理を行い 接着力を高め、 さらにその後、 熱酸化膜が設けられた側の Si基板を研削し、 前記 Si基板の厚さを熱酸化膜の厚さ程度までにし、 前記 Si基板側の残りの S iを選択 エッチヤン卜に浸積して完全に溶解させ、表面に Si02が現れるようにすることで 平坦化するのである。 平坦化した後は、 通常のプロセスを用いて有機光導波路を 設け、 リアクティブイオンエッチングにより、 溝部分の有機光導波路および Si 02 を除去し、 溝を露出させる。 前記溝に光ファイバを挿入して、 そのまま接^剤に て固めて光素子が完成する (田淵ら、 1993年電子情報通信学会春季大会 C- 279、 および田淵ら、 「光ハイプリッ ド集積のための V溝付き Si基板の平坦化」 、 信学 技報、 0PE-94-62 (1994-09) ) 。  An example of a passive alignment method will be given. First, a V-groove is formed in advance on the Si substrate by anisotropic etching so that the position of the optical fiber can be determined precisely, and this is used as a fiber guide groove. However, since the fiber guide groove has a depth of several tens of microns, even if an optical waveguide is to be provided as it is, most of the optical waveguide material flows into the fiber guide groove, and a precise light guide is provided near the groove. Waveguide cannot be created. Therefore, the substrate having the fiber guide groove is flattened by the following method. That is, first, a Si02 film is formed on another Si substrate surface by thermal oxidation, the Si02 film side is superimposed on the substrate surface provided with the fiber guide groove, and a high-frequency electric field is applied to bond the two substrates. Fit together. Subsequently, a heat treatment at a temperature of about 100 ° C. is performed to increase the adhesive strength. Thereafter, the Si substrate on the side provided with the thermal oxide film is ground, and the thickness of the Si substrate is reduced to the thickness of the thermal oxide film. After that, the remaining Si on the Si substrate side is immersed in the selective etchant to completely dissolve it, and the surface is planarized by allowing Si02 to appear on the surface. After planarization, an organic optical waveguide is provided using a normal process, and the organic optical waveguide and Si 02 in the groove portion are removed by reactive ion etching to expose the groove. An optical fiber is inserted into the groove and solidified with the adhesive as it is to complete the optical device. (Tabuchi et al., 1993 IEICE Spring Conference C-279, and Tabuchi et al., "Integration of optical hybrids Planarization of V-grooved Si substrate ”, IEICE Technical Report, 0PE-94-62 (1994-09).
しかしながら従来方法のアクティブァライメントでは、 光素子側に特に工夫を するわけではなレ、ので光素子自体の作製は容易であるが、 光ファイバとの実装に 組立て時間を要する問題がある。 すなわち、 上記従来方法の別の例で示した光力 ブラなどのように、 複数本の光ファイバの位置微調整が必要な場合には、 組立て 時間の著しい増大が起こる問題がある。 たとえば、 〗本の信号光を 2本に分岐す る機能を有する Y分岐素子を 1 : 2力ブラと呼ぶことにすれば、 上記光ファイバ 実装の大変さは、 入出力本数の多い受動素子になればなるほど大変である。 1 : 1 6力ブラともなれば、 合計 1 7本の光ファイバの位置微調整を完全に行うこと はほとんど不可能である。 このため、 1 : 2力ブラから 1 : 1 6に至ると、 出力 ばらつきが増えて素子特性が劣化する問題、 さらに光素子のコス卜が割高になる 問題がある。 However, in the active alignment of the conventional method, the optical element itself is not particularly devised. Therefore, the optical element itself can be easily manufactured, but there is a problem that it takes time to assemble the optical element with the optical fiber. That is, when fine adjustment of the position of a plurality of optical fibers is required, as in the case of the optical power blur shown in another example of the above conventional method, there is a problem that the assembling time significantly increases. For example, split〗 signal light into two If we call a Y-branch element with a function of 1: 2 force, the difficulty of mounting the above optical fiber becomes more severe as the number of input / output devices increases. With a 1:16 force bra, it is almost impossible to make a fine adjustment of the position of a total of 17 optical fibers. For this reason, from 1: 2 force blur to 1:16, there is a problem that the output variation increases and the device characteristics are degraded, and the cost of the optical device becomes high.
一方、 従来方法のパッシブァライメン トでは、 光ファイバとの実装が容易であ り、 上 アクティブァライメン卜における組立て時間の著しい増大は起こらない 力;、 ファイバガイ ド溝を有する基板を平坦化する工程に時間を要するため、 実用 に至っていない。 すなわち、 熱酸化膜が設けられた側の Si 基板を研削し、 前記 Si基板の厚さを熱酸化膜の厚さ程度までにし、 前記 Si基板側の残りの Siを選択 エッチヤン卜に浸積して完全に溶解させ、表面に Si02が現れるようにする工程に 時間を要するため、 パッシブァライメン卜による光ファイバ実装の容易化を実現 できない問題がある。  On the other hand, in the passive alignment of the conventional method, the mounting with the optical fiber is easy, and the assembly time in the active alignment does not increase remarkably; the substrate having the fiber guide groove is flattened. It has not been put into practical use because it takes time for the process of conversion. That is, the Si substrate on the side where the thermal oxide film is provided is ground, the thickness of the Si substrate is reduced to about the thickness of the thermal oxide film, and the remaining Si on the Si substrate side is immersed in a selective etchant. It takes a long time to completely dissolve and make the Si02 appear on the surface, which makes it difficult to implement optical fiber mounting by passive alignment.
発明の開示 Disclosure of the invention
そこで本発明の目的は、 ファイバガイ ド溝を有する基板を平坦化する工程を簡 易にする方法を提供し、 パッシブァライメントによる光ファイバ実装の容易化を 実現することにある。  Therefore, an object of the present invention is to provide a method for simplifying a step of flattening a substrate having a fiber guide groove, and to realize easy optical fiber mounting by passive alignment.
本発明の他の目的は、 上記平坦化工程の簡易化のみならず、 前記平坦化工程後 に設けられる有機光導波路の作製工程をも簡易にする手段を提供することにある。 上記本発明の目的を達成するため、 ファイバガイ ド溝を有する基板に、 有機材 料からなるフィルムを貼付けることにより'、 前記基板表面を従来よりもずつと簡 易に平坦化する方法を提案する。  It is another object of the present invention to provide means for simplifying not only the above-described flattening step but also the step of manufacturing an organic optical waveguide provided after the flattening step. In order to achieve the object of the present invention, a method is proposed in which a film made of an organic material is adhered to a substrate having a fiber guide groove, thereby making the surface of the substrate easier and flatter than before. I do.
また、 上記本発明の他の目的を達成するため、 前記有機材料からなるフィルム を、 前記フィルム上部に設ける光導波路の下部クラッドと兼用する方法を提案す る。  In order to achieve another object of the present invention, a method is proposed in which a film made of the organic material is also used as a lower clad of an optical waveguide provided on the film.
図面の簡単な説明 BRIEF DESCRIPTION OF THE FIGURES
第 1図は、 本発明に係る実施の一形態を示す外観斜視図である。 第 2図は、 本発明に係る実施の一形態の製造方法の詳細説明図である。 FIG. 1 is an external perspective view showing one embodiment of the present invention. FIG. 2 is a detailed explanatory view of a manufacturing method according to an embodiment of the present invention.
第 3図乃至第 8図は、 本発明に係る実施の--形態の他の製造方法の説明図であ る。  3 to 8 are explanatory views of another manufacturing method according to the embodiment of the present invention.
第 9図乃至第 1 2図は、 本発明に係る他の実施の一形態の説明図である。  9 to 12 are explanatory diagrams of another embodiment according to the present invention.
第 1 3図は、 本発明に係る実施の一形態の他の製造方法の説明図である。  FIG. 13 is an explanatory diagram of another manufacturing method according to one embodiment of the present invention.
第 1 4図および第 1 5図は、 本発明に係る他の実施の一形態の説明図である。 発明を実施するための最良の形態  FIG. 14 and FIG. 15 are explanatory diagrams of another embodiment according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
(実施例 1 )  (Example 1)
第 1図は、 本発明の実施の一形態を示す外観斜視図である。 まず本発明の構成 要素と製造方法の概略を示し、 次に詳細な製造方法を述べる。  FIG. 1 is an external perspective view showing an embodiment of the present invention. First, the components of the present invention and the outline of the manufacturing method are shown, and then the detailed manufacturing method is described.
本発明は、 基板 1、 前記基板表面に設けられた光ファイバガイ ド溝 2、 ホリイ ミ ドフィルム 3、 有機光導波路 4、 および光ファイバ 6からなる。  The present invention includes a substrate 1, an optical fiber guide groove 2 provided on the surface of the substrate, a polyimide film 3, an organic optical waveguide 4, and an optical fiber 6.
本発明では、 ボリイミ ドフィルム 3を基板 1の表面に貼付けることにより、 基 板 1の表面に設けられた光ファイバガイ ド溝 2を、 従来に比べて極めて簡易に平 坦化できる。 本方法により平坦化してしまえば、 通常のブロセスを用いて有機光 導波路 4を設けるのは容易である。 その後、 ハッチングで示した除去部 5を除去 し、 光ファイバガイ ド溝 2に光ファイバ 6を挿入し、 接着剤で固めて導波路型光 素子が出来上がる。  In the present invention, by bonding the polyimide film 3 to the surface of the substrate 1, the optical fiber guide groove 2 provided on the surface of the substrate 1 can be flattened much more easily than in the past. Once planarized by this method, it is easy to provide the organic optical waveguide 4 using a normal process. Thereafter, the removed portion 5 indicated by hatching is removed, the optical fiber 6 is inserted into the optical fiber guide groove 2, and the optical fiber 6 is solidified with an adhesive to complete the waveguide type optical element.
第 2図は、 本発明の製造方法をより詳細に説明するものである。  FIG. 2 illustrates the production method of the present invention in more detail.
第 2図(a)は、 本発明であるフィルムを貼付ける T.程を示している。  FIG. 2 (a) shows a process T for attaching the film of the present invention.
Si基板 1 0の厚さは 1 ミリメートルである。 前記 Si 基板 1 0の表面には、 光 ファイバガイ ド溝として V溝 2 0が形成されている。 この V溝 2 0の大きさは、 外径 1 2 5ミクロンのシングルモ一ド光ファイバがこの V溝 2 0にはまった際、 光ファイバのコア中心の基板面からの高さが、 有機光導波路のコア中心の高さと 一致するように設定したものであり、 V 溝 2 0の幅は約〗 2 0ミクロン、 深さが 約 6 0ミクロンである。 V溝 2 0の長さは、 光ファイバの支持が十分できるよう、 4ミリメートルとした。  The thickness of the Si substrate 10 is 1 mm. V-grooves 20 are formed on the surface of the Si substrate 10 as optical fiber guide grooves. The size of the V-groove 20 is such that when a single-mode optical fiber having an outer diameter of 125 μm fits into this V-groove 20, the height of the core of the optical fiber from the substrate surface becomes the organic optical waveguide. The height of the V-groove 20 is about〗 20 microns, and the depth is about 60 microns. The length of the V-groove 20 was 4 mm so that the optical fiber could be sufficiently supported.
なお V溝 2 0の形成方法については周知であるが、 ここで簡単に説明する。 基 板表面に CVD法などにより無機材料からなる膜を形成し、 通常のホトレジス 卜ェ 程により矩形の孔を開け、 孔の部分の無機材料のみを選択的にエッチングして、 マスクを作製する。次に Siの異方性エツチャントである K0H溶液に浸積すること で、 穴の開いた部分の Si基板表面のみが V溝型にエッチングされる。 The method of forming the V-groove 20 is well known, but will be briefly described here. Base A film made of an inorganic material is formed on the plate surface by a CVD method or the like, a rectangular hole is formed by a usual photoresist process, and only the inorganic material in the hole is selectively etched to produce a mask. Next, by immersing in a K0H solution, which is an anisotropic etchant of Si, only the surface of the Si substrate where holes are opened is etched into a V-groove type.
もしも上記 V溝 2 0付の Si基板 1 0上へ通常の回転塗布法により有機導波路材 料を塗布したとすれば、 材料の多くが V溝 2 0中に流れ込むので、 V溝 2 0近傍 において基板面に平行な光導波路を作製することは極めて闲難である。 なぜなら ば有機導波路のコアの大きさは 1 0ミクロン程度だからであり、 これに対して V 溝 2 0の幅も深さも一桁大きいからである。  If the organic waveguide material is applied on the Si substrate 10 with the V-groove 20 by a normal spin coating method, most of the material flows into the V-groove 20, and thus the vicinity of the V-groove 20 It is extremely difficult to produce an optical waveguide parallel to the substrate surface in the above. This is because the size of the core of the organic waveguide is about 10 microns, whereas the width and depth of the V-groove 20 are one digit larger.
そこで本発明では、 上記のような V溝 2が形成された Si基板 1 0に、厚み 1 0 ミクロンのボリイミ ドフィルム 3 0を接着剤を用いて貼付ける。 これにより V溝 2は従来方法に比べて容易に平坦化できる。  Therefore, in the present invention, a polyimide film 30 having a thickness of 10 μm is attached to the Si substrate 10 on which the V-groove 2 is formed by using an adhesive. Thereby, the V-groove 2 can be easily flattened as compared with the conventional method.
第 2図(b)は、 平坦化した基板上へ有機導波路を設ける工程を示している。  FIG. 2 (b) shows a step of providing an organic waveguide on a flattened substrate.
有機導波路の一例として、 ここでは平坦化した基板上へコアとクラッドの比屈 折率差が 0 . 3 %、 コアの大きさが厚み、 幅とも 8 ミクロンの、 フッ素化ポリイミ ドからなる使用波長 1 . 5 5 ミクロンでシングルモード有機光導波路を設ける。 (ポリイミ ドは、 耐熱性高分子材料の一つであり、 すでに電子デバイス等に実績 があり、 信頼性がある材料の一つである。 一方ボリイミ ドは、 光通信に用いられ る近赤外光を吸収するため光導波路材料としてはこれまで用いられてこなかった。 フッ素化ポリイミ ドは、 ボリイミ ドの分子構造の一部をフッ素化することによつ て、 近赤外光をほとんど吸収しないようにしたものである。 その分子構造、 光吸 収特性、 製造プロセスについては、 小林ら、 「シングルモードポリイミ ド光導波 路」 、 信学技報、 0ME-95- 52,0PE95-93 (1995-10)を参照。 )  As an example of an organic waveguide, use here is made of fluorinated polyimide with a relative refractive index difference of 0.3% between the core and clad on a flattened substrate, and the core is 8 microns in thickness and width. A single-mode organic optical waveguide with a wavelength of 1.55 microns is provided. (Polyimide is one of the heat-resistant polymer materials, has a proven track record in electronic devices, etc., and is one of the reliable materials. Polyimide is a near-infrared light used in optical communications. Fluorinated polyimide hardly absorbs near-infrared light by fluorinating part of the molecular structure of polyimid Kobayashi et al., “Single Mode Polyimide Optical Waveguide”, IEICE Technical Report, 0ME-95-52, 0PE95-93 (1995) See -10).)
上記有機光導波路の作製方法は周知であるが、 本発明である有機フィルムの材 料限定条件が関係するため、 ここで説明する。 まずポリイミ ドフィルム上へ、 下 部クラッド材料 (屈折率が低い側、 たとえば 1 . 5 4 0 ) を回転塗布法にて所定の 膜厚分 (1 0ミクロン) 塗布し、 その後窒素雰囲気中で 3 8 0度の熱処理を 1時 問施して下部クラッドを作製する。 続いて、 コア材料 (屈折率が高い側、 たとえ ば 1 . 5 4 5 ) についても、 同様に回転塗布法にて作製する (膜厚 8 ミクロン) 。 次に、 導波路以外のコア材料を除去するため、 例えば EB蒸着法にて付着できる Ti薄膜などのメタルマスクを通常のホ 卜レジス ト工程にて作製し、酸素ガスのリ アクティブイオンエツチングなどの異方的ェッチングを行う。使用济み Tiマスク をバッファードフッ酸などで除去し、 再び上部クラッド材料 (屈折率が低レ、側、 たとえば 1 . 5 4 0 ) を同様に回転塗布法にて作製する (膜厚 1 0 ミクロン) 。 ここで、 本発明である有機フィルムは、 有機光導波路の作製プロセスの全熱処 に耐える必要がある。 すなわち、 有機光導波路の作製ブロセスの際、 回転塗布 後、 たとえばフッ素化ボリイミ ドの場合 3 8 0度でベークするが、 その問に. 平 坩化部分の有機フィルムが不均一に溶けた鲐のように曲がってしまっては、 基板 Ίこ平行な光導波路を作製できないためである。 フッ 化ボリイミ ドィ ί機導波路 の場合、 有機フィルム材料として、 耐熱性高分子材料の ·つであるポリイ ミ ドフ ィルムであれば、 本発明が実施できるが、 たとえばボリスチレンフィルムでは、 本発明が実施できない。 Although the method for producing the organic optical waveguide is well known, it will be described here because the material limitation condition of the organic film of the present invention is involved. First, a lower cladding material (lower refractive index, for example, 1.540) is applied to the polyimide film by a spin coating method for a predetermined thickness (10 microns), and then is applied in a nitrogen atmosphere. The lower clad is manufactured by applying a heat treatment of 80 degrees for 1 hour. Next, the core material (higher refractive index, For example, 1.5 4 5) is also manufactured by the spin coating method (thickness: 8 μm). Next, in order to remove the core material other than the waveguide, for example, a metal mask such as a Ti thin film that can be adhered by EB vapor deposition is manufactured by a normal photoresist process, and reactive ion etching of oxygen gas or the like is performed. Perform anisotropic etching. Used Ti mask is removed with buffered hydrofluoric acid, etc., and the upper clad material (low refractive index, side, for example, 1.540) is again produced by the spin coating method (film thickness 10 Micron). Here, the organic film according to the present invention needs to withstand all heat treatments in the process of manufacturing the organic optical waveguide. In other words, in the process of manufacturing an organic optical waveguide, after spin coating, for example, in the case of fluorinated polyimide, baking is performed at 380 ° C. However, the problem is that the organic film in the flat crucified portion melted unevenly. This is because if the substrate is bent in this manner, an optical waveguide parallel to the substrate cannot be manufactured. In the case of a polyimidide fluoride waveguide, the present invention can be carried out as long as the organic film material is a polyimide film which is one of heat-resistant polymer materials. Cannot be implemented.
このことについて、 もう少し詳しく述べる。 有機フィルムが不均一に溶けた飴 のように曲がってしま,うのは、一般的にはガラス転移点 Tg以ト.という目安がある。 さらに温度を Tg以ヒに上げていくと、 やがて熱分解開始温度 Tf に達する。 した がって、 Tpを有機材料のベークプロセス中の熱処理最^温度として  I will elaborate a little more on this. The organic film bends like a candy in which it is unevenly melted, and the general rule is that the glass transition point is Tg or less. When the temperature is further increased to above Tg, the temperature reaches the thermal decomposition onset temperature Tf. Therefore, Tp is defined as the maximum heat treatment temperature during the baking process for organic materials.
フィルムの Tg >有機導波路の Tp  Tg of film> Tp of organic waveguide
であることが望ましい。 「望ましい」 ではなく、 本発明で使用する有機フィルム は最低限の条件として、 It is desirable that Rather than "desirable", the organic film used in the present invention is a minimum condition,
Tf >Tp  Tf> Tp
を必ず満足する必要がある。 Must be satisfied.
有機材料の Tp、 Tg 、 Tf の具体的数値は、 次の 2種類のいずれかになる傾向が ある。  Specific values of Tp, Tg, and Tf for organic materials tend to be one of the following two types.
A: Tp、 Tg 、 Tf 力 1 0 0度から 2 0 0度程度である有機材料  A: Organic material with Tp, Tg, Tf force of about 100 degrees to about 200 degrees
B: TP、 Tg 、 Tf力 3 0 0度から 4 0 0度程度である有機材料 B: T P , Tg, Tf force Organic material with about 300 to 400 degrees
上記 A群には、 たとえばボリメチルメタクリレート、 ボリカーボネート、 ポリ スチレンなどの光学用有機材料が含まれる。 ポリメチルメタクリレー卜の場合、 Tpは約 8 0度、 Tgは約 1 0 0度、 Tf は約 1 5 0度である。 Group A includes, for example, polymethyl methacrylate, polycarbonate, Organic materials for optics such as styrene are included. In the case of polymethyl methacrylate, Tp is about 80 degrees, Tg is about 100 degrees, and Tf is about 150 degrees.
上記 B群には、 たとえばポリイミ ド、 ボリシロキサンなどの、 芳香環や架橋構 造など有する耐熱性高分子材料が含まれる。 ポリイミ ドの場合、 Tp は約 3 5 0 度、 Tg、 Tf は共に 4 0 0度以上である (ポリシロキサンの分子構造、 光吸収特性、 製造プロセスについては、 については、 碓氷ら、 「耐熱性に優れた低損失ボリマ 一光導波路」 、 信学技報、 0ME94- 47 (1994- 09)を参照) 。  The group B includes, for example, heat-resistant polymer materials having an aromatic ring or a crosslinked structure, such as polyimide and polysiloxane. In the case of polyimide, Tp is about 350 degrees and Tg and Tf are both 400 degrees or more. (For the molecular structure, light absorption characteristics, and manufacturing process of polysiloxane, see Usui et al. Excellent low-loss Bolima single optical waveguide ", IEICE Technical Report, 0ME94-47 (1994-09)).
本発明に用いる有機材料からなるフィルムとしては、 B群すなはち、 Tgおよび Tfが高い方がより好適である。 なぜならば、 B群すなはち、 Tgおよび Tf が高い 方の材料を用いれば、 前記フィルム上に、 A群の材料からなる光導波路でも、 B 群の材料からなる光導波路でも、 またはそれらの組み合わせからなる光導波路で も前記望ましい条件を満足するからである。  As the film made of the organic material used in the present invention, it is more preferable that the group B, that is, the Tg and Tf are higher. This is because if the material having the higher Tg and Tf is used in the group B, an optical waveguide made of the material of the group A, an optical waveguide made of the material of the group B, or a combination thereof is formed on the film. This is because an optical waveguide consisting of the above also satisfies the above desirable conditions.
ただし、 A群、 B群の分類傾向についてここで表記した理由は、 本発明の最低限 の条件、 ならびに望ましい条件につき理解しやすいように、 一例として示したに 過ぎない。 すなはち、 有機光導波路製造プロセスの問に、 平坦化部分の有機フィ ルムが不均一に溶けた飴のように曲がってしまわないようにフィルム材料と光導 波路材料を選択することが強調したい点である。  However, the reason why the classification tendency of the group A and the group B is described here is shown only as an example so that the minimum condition and the desirable condition of the present invention can be easily understood. In other words, in the question of the organic optical waveguide manufacturing process, it is important to emphasize the selection of the film material and the optical waveguide material so that the organic film in the flattened portion does not bend like unevenly melted candy. It is.
第 2図(c) は、 V 溝 2 0直上の有機光導波路ならびに有機材料からなるフィル ムを除去するために、 V溝 2 0直上の除去部に穴が開いた Ti などのメタルマス ク 5 0を形成する工程を示したものである。  Fig. 2 (c) shows a metal mask 50 such as Ti with a hole in the removed portion immediately above the V-groove 20 to remove the organic optical waveguide and the film made of organic material directly above the V-groove 20. FIG.
第 2図(d) は、 酸素プラズマによるリアクティブイオンエッチングにより、 V 溝 2 0直上の有機光導波路ならびに有機材料からなるフィルムを除去し、 V溝 2 0が現れる工程を示したものである。 現れた V溝 2 0に外径 1 2 5 ミクロンのシ ングルモ一ド光ファイバ 6 0をはめ込むと、 光ファイバ 6 0のコア中心の基板面 からの高さは、 有機光導波路 4 0のコア中心の基板面からの高さに一致する。 こ のまま接着剤で固定することで、 光素子ができあがる。  FIG. 2 (d) shows a process in which the organic optical waveguide immediately above the V-groove 20 and the film made of an organic material are removed by reactive ion etching using oxygen plasma, and the V-groove 20 appears. When a single-mode optical fiber 60 having an outer diameter of 125 μm is inserted into the V-groove 20 that appears, the height of the core of the optical fiber 60 from the substrate surface becomes the center of the organic optical waveguide 40. Height from the substrate surface. An optical element can be completed by fixing it with an adhesive.
シングルモードでは、 光ファイバと光導波路との光結合では、 そのコア中心が 5 ミクロン程度ずれると結合損失が 1 0 dB以上増大する。すなわちマルチモード のそれに比べて、 コア中心のズレ量に対してシングルモ一ドの導波路の方がより 厳しレ、。 本発明では、 上記に示したように簡易な方法でコア中心を合わせること ができるので、 特にシングルモ一ド光導波路の場合に効果がある。 In the single mode, in the optical coupling between the optical fiber and the optical waveguide, the coupling loss increases by more than 10 dB when the core center is shifted by about 5 microns. Ie multi-mode Single mode waveguides are more strict than the core center deviation. In the present invention, since the core centers can be aligned by the simple method as described above, the present invention is particularly effective for a single-mode optical waveguide.
以上述べたように、 本発明によれば、 ファイバガイ ド溝を有する基板に有機物 からなるフィルムを貼付けるという、 従来方法に比べて簡易な平坦化方法を提供 することによって、 パッシブァライメントによる光ファイバ実装の容易化を実現 できる。  As described above, according to the present invention, by providing a flattening method that is simpler than the conventional method, in which a film made of an organic substance is attached to a substrate having a fiber guide groove, light by passive alignment is provided. Facilitates fiber mounting.
なお、 上記第 2図にて示した各方法は、 次のような方法を用いてもよい。  In addition, each of the methods shown in FIG. 2 may use the following method.
有機材料からなるフィルムの基板への貼付け方法の別の方法を第 3図に示す。 すなわち、 ボリイミ ドフィルム 3 0を一旦別の基板 7に貼付ける (第 3図(a) ) 。 次に前記フィルム付別基板を、 ホリイミ ドフイルム 3 0を基板 1 ()側にして貼付 ける (第 3図(b) ) 。 この際、 ボリイミ ドフィルム 3 0の、 別の基板 7との接着力 F7と、 基板 1 0との接着力 F10 との関係が、 F10 > F7であるようにしておく。 最 後に、 F10〉F7の接着力の差を利用して、 別基板 7のみをはがす (第 3図( ) 。 この方法を用いれば、 V 溝 2 0部分でボリイミ ドフィルム 3 0がたるむことなく 平坦に貼付けることができる効果がある。  FIG. 3 shows another method of attaching a film made of an organic material to a substrate. That is, the polyimide film 30 is temporarily attached to another substrate 7 (FIG. 3 (a)). Next, the above-mentioned separate substrate with a film is attached with the hollow film 30 facing the substrate 1 () (FIG. 3 (b)). At this time, the relationship between the adhesive force F7 of the polyimide film 30 to another substrate 7 and the adhesive force F10 to the substrate 10 is set so that F10> F7. Finally, using the difference in the adhesive strength of F10> F7, only the separate substrate 7 is peeled off (Fig. 3 (). With this method, the polyimide film 30 does not sag in the V-groove 20) There is an effect that it can be stuck flat.
また、 上記 F10 >F7なる接着力の差を作り出すためには、 接着力の異なる接着 剤を用いてもよいが、 同一の接着剤であっても、 第 3図(a)の前に、 前記フィルム 付別基板をフッ酸などの浸透性の極めて高い溶剤に浸積し、 別の基板 7との接着 力を弱めることでも F10 > F7なる接着力の^を作り出すことができる。 この場合 には、 同一の接着剤を用いればよいので、 用いることのできる接着剤の種類が少 ないときに有効である。  Further, in order to create the difference in the adhesive force of F10> F7, adhesives having different adhesive forces may be used. However, even if the same adhesive is used, before the adhesive agent shown in FIG. By immersing the substrate with the film in an extremely permeable solvent such as hydrofluoric acid to weaken the adhesive strength with another substrate 7, it is possible to create an adhesive strength of F10> F7. In this case, since the same adhesive may be used, it is effective when there are few kinds of adhesives that can be used.
また、有機光導波路の作製には、電子ビームや紫外線などを選択的に照射して、 一部の有機材料のみ化学変化を起こさせ、 それに伴う屈折率変化を利用して屈折 率分布を作製する方法を用いてもよい (電子ビーム照射により屈折率変化利用に ついては、 たとえは、 Y. Tamada, et al. , "Limbeddod Channel Folyi mide Waveguide Fabrication by Direc t Electron Beam Wri ting Method", Journal of Lightwave Technology, vol. 13, page l718, 1995を参照) 0 さらに端面の形成工程については、 ダイシングによる形成でもよい。 第 4図(a) は、 ダイシング切り口 7 1により、 端面を形成する様子を示している。 第 4図(b) の状態にするには、第 4図(a)の状態から、 ピンセッ トなどにより物理的に V溝 2 0上の有機光導波路 4 0ならびにポリイミ ドフィルム 3 0を除去すればよい。 V 溝 2 0上の有機光導波路 4 0ならびにポリイミ ドフィルム 3 0は、 基板 1 0との 接着面積が、 V溝型となっている分、 他の筒所に比べて小さく、 その結果として、 相対的に接着力が弱くなつているからである。 本方法は、 リアクティブエツチン グによる端面形成よりも、 簡易である。 なぜならば、 いずれにしても素子化工程 において、 1 ミリ程度の S i基板をスクライブする際には、 ダイシングを用いて行 うからである。 すなわち、 端面形成工程並びに素子化工程をダイシングにて一度 にすませてしまえば、 1程が一つ省略でき、 より簡易化できる効果がある。 Also, when fabricating an organic optical waveguide, an electron beam or ultraviolet light is selectively irradiated to cause a chemical change only in some organic materials, and a refractive index distribution is created using the refractive index change accompanying the change. (Refer to Y. Tamada, et al., "Limbeddod Channel Folyi mide Waveguide Fabrication by Direct Electron Beam Writing Method", Journal of Lightwave Technology. , vol. 13, page l718, 1995) 0 Further, the end face may be formed by dicing. FIG. 4 (a) shows a state in which an end face is formed by the dicing cut 71. FIG. In order to obtain the state of FIG. 4 (b), the organic optical waveguide 40 and the polyimide film 30 on the V-groove 20 are physically removed from the state of FIG. 4 (a) by tweezers or the like. I just need. The organic optical waveguide 40 and the polyimide film 30 on the V-groove 20 have a smaller bonding area with the substrate 10 because of the V-groove type. This is because the adhesive strength is relatively weak. This method is simpler than the end face formation by reactive etching. This is because, in any case, dicing is used to scribe a Si substrate of about 1 mm in the element fabrication process. That is, if the end face forming step and the element forming step are performed at the same time by dicing, one step can be omitted, and there is an effect that the process can be further simplified.
ダイシングによる端面形成については、特に基板 1 0に Si基板を用い、光ファ ィバガイ ド溝として V溝 2 0が用いられている場合については、 V溝 2 0の K手 方向のどこでダイシングするかに次の二つの方法がある。第 5図(a)は外観斜視図 を示し、 A— Λ'で切った断面図を第 5図(b)に示す。 第 5図(b)に明示したように、 V溝 2 0は全て Si (1 1 1) 面で構成されているために、 A—A'で切った断面図では、 余 4めになっている。  Regarding the end face formation by dicing, particularly in the case where a Si substrate is used for the substrate 10 and the V groove 20 is used as the optical fiber guide groove, where to dice in the K direction of the V groove 20 There are two ways: FIG. 5 (a) shows an external perspective view, and FIG. 5 (b) shows a cross-sectional view taken along line A-— '. As clearly shown in Fig. 5 (b), the V-grooves 20 are all composed of Si (1 1 1) planes. I have.
ダイシング切り口 7 1の一つの位置は、 V溝 2 0手前である (第 6図(a) ) 。 こ の場合、 V溝 2 0上の有機光導波路 4 0およびボリイミ ドフィルム 3 0を剥がし て光ファイバ 6 0を固定しても、 有機光導波路 4 0と光ファイバ 6 0との間に、 V 溝の (111) 面の斜面分だけ距離が開いてしまう (第 6図(b) ) 。 この場合、 前 記距離は V溝深さと同じ約 6 3 ミクロンである。 そうするとここで光結合損失が 増えてしまう問題が起こる。 そのため、 光ファイバ側を V溝の (111) 面の斜面に 合わせて斜めに研磨する必要があり、 手間が掛かる。  One position of the dicing cut 71 is just before the V-groove 20 (FIG. 6 (a)). In this case, even if the organic optical waveguide 40 and the polyimide film 30 on the V-groove 20 are peeled off and the optical fiber 60 is fixed, the V optical gap between the organic optical waveguide 40 and the optical fiber 60 remains. The distance increases by the slope of the (111) plane of the groove (Fig. 6 (b)). In this case, the distance is about 63 microns, which is the same as the V-groove depth. Then, there is a problem that the optical coupling loss increases here. Therefore, it is necessary to polish the optical fiber side obliquely to match the slope of the (111) plane of the V-groove, which is troublesome.
ダイシング切り口 7 1のもう一つの位置は、 V 溝斜面ごとダイシングしてしま う位置である (第 7図(a) ) 。 この場合、 ダイシングブレードの厚さが上記斜面以 上の厚さ 6 3 ミクロン以上であれば、 原理的には有機光導波路 4 0と光ファイバ 6 0との距離をゼロにすることができる。 すなわち、 ダイシングブレードの厚さ と、 ダイシング切り口 7 1の位置を考慮するだけで、 光結合損失は最小限に抑え られる効果がある。 Another position of the dicing cut 71 is a position where dicing is performed on the slope of the V-groove (FIG. 7 (a)). In this case, the distance between the organic optical waveguide 40 and the optical fiber 60 can be reduced to zero if the thickness of the dicing blade is 63 μm or more above the slope. That is, the thickness of the dicing blade By simply considering the position of the dicing cut 71, the optical coupling loss can be minimized.
本発明は、 光力プラ、 フィルタなどこれまで報告されたことのある、 あらゆる 受動素子について効果がある。 なぜならば、 本発明の場合には、 ファイバとのァ ライメントは完全にパッシブに行うため、 受動素子であることが特別の意味をも たず、 なんら変わりなくファイバ実装を行うことができるからである。 本発明は 特に入出力光ファィバの本数が多ければ多いほど従来のァクティブァライメント 方法に比べて劇的な効果が上がる。 参考のため、 第 8図に 1 : 4力ブラの図を示 す。 1 : 2力ブラから】 : 1 6に至ったところで、 出力光のばらつきは溝の作製 精度のみに依存するので、 入出力本数が増えたからといつて素子-特性の劣化は起 こらなレ、。 ァライメントにかかる時問についても、 ファイバとのァライメントは 完全にパッシブに行うため、 短時間ですみ、 結果として入出力本数が増えたから といって劇的な時間増加はおこらない。 以ヒ述べたごとく、 本発明は受動素子、 特に入出力本数の多い受動素子については、 本発明は効果がある。  The present invention is effective for all passive devices that have been reported so far, such as optical power plugs and filters. This is because, in the case of the present invention, since the alignment with the fiber is completely passive, the passive element has no special meaning and the fiber can be mounted without any change. . The present invention has a dramatic effect as compared with the conventional active alignment method, especially when the number of input / output optical fibers is large. Figure 8 shows a 1: 4 force bra for reference. 1: From a two-stroke brush]: At the point of reaching 16, the variation of the output light depends only on the precision of the groove formation. Therefore, the deterioration of the element-characteristics does not occur because the number of input / output lines increases. . Regarding the time required for the alignment, the alignment with the fiber is completely passive, so it takes only a short time, and as a result, the dramatic increase in the number of input / output lines does not occur. As described above, the present invention is effective for passive elements, particularly for passive elements having a large number of input / output lines.
(実施例 2 )  (Example 2)
本発明がさらに効果があるのは、 電極からエネルギーを^て導波路の物理的特 性を変えることを利用する能動素子にっレ、てである。 i 本例として、第 9図に 1 : The present invention is even more effective in active devices that utilize the energy from the electrodes to alter the physical properties of the waveguide. i In this example, 1 in Figure 9:
2の熱効果型光スィッチを示す。 この素子は、 電極 7 2が導波路上に設けられて おり、 前記片方の電極のみに電流を流すことによって、 導波路直上に設けられた ヒータ部 7 3が片方だけ加熱する。 その結果、 1 : 2構成の片側の有機光導波路 の屈折率が下がり、 光は加熱されていない導波路だけに伝搬するようになる (熱 効果型光スィ ツチの例と しては例えば、 G. F. Lipscomb, et al . , "Packaged thermo-optic polymer 1x2 swi tch", OFC'95 Technical Di gest, WS10を参照) 0 このような能動素子においては、 前記の入出力ファイバを仮固定しながら、 そう したうえで、 素子能動部を動かし、 光出力が最大となるように、 入出力ファイバ を微調整し固定しなければならない。 このため、 微調整する際に制御しなければ ならないのは、 前記入出力ファイバ全本数に加え、 電極にどのような電気工ネル ギ一を加えるかのパタン数が増え、 位置微調整がますます困難になろ。 本発明では、この場合ファイバとのァライメントは完全にパッシブに行うため、 電気エネルギーパタン数にかかわらずに済む。 すなわち本発明は、 電極による電 気エネルギーの効果を利用する光素子のファイバのァライメントに関しても、 受 動素子と同様に行えるので、 簡単にァライメントでき、 受動素子に対してよりも さらに効果がある。 2 shows a heat effect type optical switch of FIG. In this element, an electrode 72 is provided on a waveguide, and a current flows through only one of the electrodes, so that a heater section 73 provided immediately above the waveguide heats only one of the electrodes. As a result, the refractive index of the organic optical waveguide on one side of the 1: 2 configuration decreases, and light propagates only to the unheated waveguide (for example, GF is a heat effect type optical switch). Lipscomb, et al., "Packaged thermo-optic polymer 1x2 switch", OFC'95 Technical Digest, WS10) 0 In such an active element, the input and output fibers were temporarily fixed. In addition, the input and output fibers must be fine-tuned and fixed so that the optical output is maximized by moving the active part of the device. For this reason, it is necessary to control the fine adjustment in addition to the total number of input and output fibers as well as the number of patterns to determine the type of electric energy to be applied to the electrodes. Become difficult. In the present invention, since the alignment with the fiber is completely passive in this case, it is sufficient regardless of the number of electric energy patterns. That is, since the present invention can be carried out in the same manner as in the case of the passive element, the alignment of the fiber of the optical element utilizing the effect of the electric energy by the electrodes can be easily carried out, and is more effective than the passive element.
上記のような熱効果型光スィッチにおいては、 基板が熱伝導性が優れ、 フアイ バ実装も容易な Si基板であると、熱がこもらないので、 スィツチングスビードが 速くなるので、 より効果的である。  In the thermal effect type optical switch as described above, if the substrate is a Si substrate having excellent thermal conductivity and easy to mount the fiber, heat is not trapped, so that the switching beads are faster, which is more effective. is there.
上記のような熱効果型光スィツチにおいては、 前記電極を有機導波路のヒ部に 設けるのが通常であるが、 有機導波路の下部に形成してもよい。 というのは有機 導波路上部に段差があると、 フォトレジスト塗布時の膜厚ムラ、 焦点ボケが起こ り、 精密なパタン精度を出すことができないからである。 たとえば段差が 3ミク ロン程度ある場合、 段差の上下で 3ミクロン程度のパタン幅誤差が生じる。 しか し、 電極を有機導波路の下部に形成することによって、 電極パタン形成時には段 差を生じないようにできるためノ タン幅誤差を通常時の 0 . 5ミクロン以下にす ることができる。  In the heat effect type optical switch as described above, the electrode is usually provided at the bottom of the organic waveguide, but may be formed below the organic waveguide. This is because if there is a step on the top of the organic waveguide, unevenness in the film thickness and blurring of the focus when applying the photoresist will occur, and precise pattern accuracy cannot be obtained. For example, if the step is about 3 microns, a pattern width error of about 3 microns occurs above and below the step. However, by forming the electrodes below the organic waveguide, it is possible to prevent a step from occurring at the time of forming the electrode pattern, so that the error in the pattern width can be reduced to 0.5 μm or less, which is a normal value.
第 1 0図は、 電極を有機導波路の下部に形成する作製方法の説明図である。 第 1 0図(a)は、 V溝 2 0をポリイミ ドフィルム 3 0で平坦化した後に、 電極材 料の蒸着し、 通常のフォトリソグラフィにより電極パタンを形成した図である。 電極材料の厚さは、 厚くても 1 ミクロン程度とわずかなので、 支障がなく有機光 導波路 4 0を作製することができる (第 1 0図(b) ) 。  FIG. 10 is an explanatory diagram of a manufacturing method for forming an electrode below an organic waveguide. FIG. 10 (a) is a view in which after V grooves 20 are flattened with a polyimide film 30, an electrode material is deposited, and an electrode pattern is formed by ordinary photolithography. Since the thickness of the electrode material is as small as about 1 micron at most, the organic optical waveguide 40 can be manufactured without any problem (FIG. 10 (b)).
第 1 0図(c) は、 V溝 2 0直上ならびに電極近傍上の、 有機光導波路および有 機材料からなるフィルムを除去するために、除去部に穴が開いた Tiなどのメタル マスク 7 4を形成する工程を示したものである。  FIG. 10 (c) shows a metal mask made of a metal such as Ti with a hole in the removed part to remove the organic optical waveguide and the film made of an organic material directly above the V-groove 20 and near the electrode. FIG.
第】 0図(d) は、酸素プラズマによるリアクティブイオンエッチングにより、 V 溝 2 0直上ならびに電極近傍上の、 有機光導波路および有機材料からなるフィル ムを除去し、 V溝 2 0ならびに電極 7 2が現れる工程を示したものである。 電極 自体がメタルマスクとなり、電極直下の部分の有機材料からなるフィルムは残り、 電極パッ ドとなるが、 電極パタンのない部分はエッチングされ、 基板表面が現れ る。 FIG. 0 (d) shows that the film made of the organic optical waveguide and the organic material immediately above the V-groove 20 and near the electrode is removed by reactive ion etching using oxygen plasma, and the V-groove 20 and the electrode 7 are removed. Step 2 appears. The electrode itself becomes a metal mask, and the film made of organic material immediately below the electrode remains. An electrode pad is formed, but the part without the electrode pattern is etched and the substrate surface appears.
ここで、 ヒータ部 7 3と基板 1 0との間にボリィミ ドフィルム 3 0がある力 、 これがあることが熱効果型光素子にとって重要である。 なぜならば、 Siの熱伝導 率は l48W/m. Kであり、 石英硝子は 14 W/m. Kである。 これらの値は有機材料に比 ベて各々 2桁、 1桁人きいため、 もしもボリイミ ドフィルム 3 0がないと、 ヒ一タ 部 7 3の熱はほとんど基板 1 0に逃げてしまい、 光素子が動かなくなるからであ る。 したがって、 ポリイミ ドフィルム 3 0は基板平 iU化のみならず、 光導波路下 部ヒータの基板 1 0との断熱材としての役割を果たしている。 Here, there is a force that the polyimide film 30 has between the heater unit 73 and the substrate 10, and it is important for the thermal effect type optical element that this is present. Because the thermal conductivity of Si is l 4 8W / m. K, quartz glass is 14 W / m. K. Since these values are two digits and one digit, respectively, higher than those of organic materials, if there is no polyimide film 30, almost all the heat of the heater 73 will escape to the substrate 10 and the optical element Will not work. Therefore, the polyimide film 30 plays a role not only as a substrate having a flat iU but also as a heat insulator between the substrate 10 and the lower heater of the optical waveguide.
このように本方法によれば、 作製の順番を変史するだけで、 プロセス数を増や すことなく、 フォ トレジス ト塗布時の膜厚ムラ、 焦点ボケの問題を解決し、 電極 の精密なバタン精度を出すことができる効果がある。  As described above, according to the present method, the problem of film thickness unevenness and defocusing at the time of photo resist coating can be solved without increasing the number of processes by merely changing the order of fabrication, and the precision of the electrode can be improved. There is an effect that bang accuracy can be obtained.
さらに第 1 0図の作製方法を用いて、 第 1 1図に示すような導波路型半導体光 素子を集積することもできる。 すなわち、 電極パッド 7 5に導波路型半導体光素 子 7 6をリフローボンディングすることでパッシブに実装することができる (半 導体素子のパッシブ実装方法の従来例としては、 基板 Ίこ平行な方向がマーカ一 法、 垂直な方向がリフ口一ボンディング法がある。 これらのより^しいことにつ いては、 橋木ら、 "PLCプラッ トフオーム上へのパッシブァライメントによる LL), モニタ一 PDの搭載"、 1 9 9 6年電子情報通信学会総合大会、 C-206や、伊藤ら、 " 光デバイスのパッシブァラィン技術 "、回路実装学会誌、 vol. 10, No. 5 (1995)、 302 Γίを参照) 。 たとえば、 光素子 7 6の片方をレーザー、 もう片方を受光器とする ことによって、 送受信光回路を実現できる (送受信光回路の従来例については、 山田ら、 "PLCブラットフオームを用いたフィルタ反射型 WI)M送受信光回路" 、 1 9 9 6年電子情報通信学会総合大^、 SC- 2-5を参照) 。 ただしポリイミ ドフィ ルム 3 0は耐熱性高分子である必要がある。 この方法を用いることで、 集積化に よる小型化、 光素子同士のァライメン卜の簡易化ができる効果がある。  Further, a waveguide type semiconductor optical device as shown in FIG. 11 can be integrated by using the manufacturing method shown in FIG. That is, the waveguide type semiconductor optical device 76 can be passively mounted on the electrode pad 75 by reflow bonding. (As a conventional example of the passive mounting method of the semiconductor device, the direction parallel to the substrate is Hashiki et al., “Installation of LL by passive alignment on PLC platform, mounting of monitor and PD” "Institute of Electronics, Information and Communication Engineers, General Conference, 1996, C-206, Ito et al.," Passive line technology for optical devices ", Journal of Japan Institute of Circuit Packaging, vol. 10, No. 5 (1995), 302 302 See). For example, a transmission / reception optical circuit can be realized by using one of the optical elements 76 as a laser and the other as a photodetector. (For a conventional example of a transmission / reception optical circuit, see Yamada et al., “Filter reflection type using PLC platform.” WI) M Transmit / Receive Optical Circuit ", IEICE Institute of Electronics, Information and Communication Engineers, University of Tokyo ^^, SC-2-5). However, polyimide film 30 needs to be a heat-resistant polymer. By using this method, there is an effect that downsizing due to integration and simplification of alignment between optical elements can be achieved.
また、 第 1 0図の作製方法を用いて、 第 1 2図に示すようなアレイ型光素子の 材料節約を図ることもできる。 第 1 2図(a)は従来方法を示すものである。 半導体 光素子アレイ 7 8の素子間隔 aは、 光ファイバアレイ' 6 1の間隔 bと同じ設計さ れ、 通常 2 5◦ミクロン間隔である。 第 1 2図(b)は本発明を示すものである。 第 1 1図と異なる点は、 入出射端で導波路間隔の異なる有機光導波路アレイ 4 1が あり、 前記有機光導波路ァレイ 4 1の導波路間隔の狭い側にァレイ型半導体光素 子 7 8がある構成となっている。 この結果、 半導体光素子アレイの素子間隔 a,は、 光ファイバアレイ 6 1の間隔 bよりも小さくでき、 アレイ型光素子の材料節約を 図ることができる。 たとえば a' : a == l : 2であれば、 前記半導体光素子アレイを 従来と同じ大きさのウェハから 2倍の数だけ得ることができ、 さらにァライメン トもパッシブで行えるので従来よりも短時間で光ファイバ実装ができる効果があ る。 Further, by using the manufacturing method shown in FIG. 10, the material of the array type optical element as shown in FIG. 12 can be saved. FIG. 12 (a) shows a conventional method. semiconductor The element interval a of the optical element array 78 is designed to be the same as the interval b of the optical fiber array 61, and is usually at an interval of 25 microns. FIG. 12 (b) illustrates the present invention. 11 is different from FIG. 11 in that there is an organic optical waveguide array 41 having different waveguide intervals at the input / output ends, and an array-type semiconductor optical element 7 8 is provided on the side of the organic optical waveguide array 41 where the waveguide interval is smaller. There is a configuration. As a result, the element interval a of the semiconductor optical element array can be made smaller than the interval b of the optical fiber array 61, and material saving of the array type optical element can be achieved. For example, if a ': a == l: 2, twice as many semiconductor optical element arrays can be obtained from a wafer of the same size as before, and the alignment can be made passively, which is shorter than before. The effect is that the optical fiber can be mounted in a short time.
(実施例 3 )  (Example 3)
本実施例では、基板平坦化のために貼付ける有機材料からなるフィルム 3 1を、 有機光導波路の下部クラッドと兼用にする素子作製方法を提案するものである。 第 1 3図(a)は基板に貼付ける工程、 第 1 3図(b)は導波路作製工程を示す。 こ の後の素子化プロセスは、 実施の形態 1と同様である。  The present embodiment proposes a device manufacturing method in which a film 31 made of an organic material to be attached for flattening a substrate is also used as a lower clad of an organic optical waveguide. FIG. 13 (a) shows a step of attaching to a substrate, and FIG. 13 (b) shows a step of manufacturing a waveguide. The subsequent device fabrication process is the same as in the first embodiment.
基板 1 0に貼付ける有機フィルム 3 1の屈折率を、 その上部に設ける有機光導 波路のクラッ ド材料と同じかそれより小さいものを用いる。 実施の形態 1の場合 には、 有機フィルム 3 1の材料は、 フィルム状のフッ素化ボリイミ ド (屈折率 1 . 5 4 0 ) を用いることにより、 有機光導波路作製工程のうち、 下部クラッ ドの回 転塗布工程を 1つ削減することができ、 極めて簡易に有機光導波路 4 2を作製す ることができる。  The organic film 31 to be adhered to the substrate 10 has a refractive index equal to or smaller than the cladding material of the organic optical waveguide provided thereon. In the case of the first embodiment, the material of the organic film 31 is a film-like fluorinated polyimide (refractive index: 1.540). One spin coating step can be reduced, and the organic optical waveguide 42 can be manufactured extremely easily.
さらに本実施の形態による提案では、 通常、 伝搬損失低減のために設ける、 厚 さ 2 0ミクロン程度のバッファ層を従来よりもはるかに簡易に作製することがで きる効果がある。  Further, the proposal according to the present embodiment has an effect that a buffer layer having a thickness of about 20 μm, which is usually provided to reduce propagation loss, can be manufactured much more easily than in the past.
通常、 回転塗布法による面内分布の優れた最大の 1回あたりの膜厚は、 1 0ミ クロン程度である。 このため、 上記 2 0ミクロン程度のバッファ層を作製するた めには 2度塗り、 3度塗り等の手間を掛ける必要がある。 しかし本実施の形態で 示したようにフィルムを有機光導波路の下部クラッドと共通にすることで、 例え ば 2 0ミクロンのフィルムを貼付ければ、 厚くなることでフィルム自体の強度は 増し、 かつ溝をたるみなく平坦化できる利点を有しつつ、 さらに厚いバッファ層 を容易に得ることができる利点がある。 Normally, the maximum film thickness per one time in which the in-plane distribution is excellent by the spin coating method is about 10 micron. For this reason, in order to produce the above buffer layer of about 20 microns, it is necessary to apply two or three coats. However, as shown in the present embodiment, the film can be shared with the lower clad of the organic optical waveguide, for example, For example, if a 20 micron film is attached, the thickness of the film itself will increase due to the increase in thickness, and there will be the advantage that the grooves can be flattened without sagging, while there is the advantage that a thicker buffer layer can be easily obtained. .
(実施例 4 )  (Example 4)
本発明は、 光ファイバガイ ド溝を有したものであるために、 従来に比べて光フ アイバとの実装が容易になる効果があるのは実施例 1、 2、 3で示したとおりで ある。 本実施の形態はこの効果を活かし、 従来にない光尜子を提供するものであ る。  As described in the first, second, and third embodiments, the present invention has the effect of facilitating the mounting on the optical fiber as compared with the related art since the present invention has the optical fiber guide groove. . The present embodiment takes advantage of this effect to provide an unprecedented photon.
本発明からなる光素子を複数集め、 1パッケージにすることの例である。 低規 模のカブラしか簡易にできなくとも、 それの組み合わせを簡易にできるので、 大 規模力ブラが容易に実現できる。その構成は第 1 4図にて示した様にすれば良い。 したがって、 本発明は特に光部品の大規模化が容易であるので、 大規模の光力プ ラが必要なシステムに特に有用である。  This is an example of collecting a plurality of optical elements according to the present invention into one package. Even if only a small-scale fogger can be simplified, the combination can be simplified, so that a large-scale power bra can be easily realized. The configuration may be as shown in FIG. Therefore, the present invention is particularly useful for a system that requires a large-scale optical power puller, because the scale of the optical component can be easily increased.
さらにこのような構成では、 低規模の光部品同士を多数結び付ける場合、 光フ アイバが煩雑になる。 この場合も、 第 1 5図に示すように、 光導波路群 1 0 1を 設け、 光のコネクタとして機能させると、 実装上の烺雑さを容易にすることが可 能である。  Further, in such a configuration, when connecting a large number of low-scale optical components, the optical fiber becomes complicated. Also in this case, as shown in FIG. 15, when the optical waveguide group 101 is provided and functions as an optical connector, it is possible to simplify the mounting complexity.
本実施の形態 4にて述べた光スィッチは、 次のようなシステムへ容易に用いるこ とができる。 例えばプロテクションスィッチ、 または光クロスコネク 卜装置であ る。 The optical switch described in the fourth embodiment can be easily used for the following system. For example, a protection switch or an optical cross-connect device.
プロテクションスィツチとは、 あらかじめ伝送路に冗長性をもたせることによ つて、 故障時に前記スィツチ切換えにより伝送路を支障なく運営できる機能の総 称であり、 伝送路全体の信頼性を高めるものである。 特に光加入者線などのプロ テクシヨンスィッチには、 低コストであることが望まれる。 この点において、 本 発明からなる光スィツチを用いると、 この点で効果がある。  The term "protection switch" is a general term for a function in which a transmission line is given redundancy in advance so that the transmission line can be operated without trouble by switching the switch in the event of a failure, thereby improving the reliability of the entire transmission line. In particular, low cost is desired for protection switches such as optical subscriber lines. In this regard, the use of the optical switch according to the present invention is effective in this respect.
クロスコネク ト装置とは、 敷設された物理的な伝送路の伝送帯域を、 いくつか のパス容量に仮想的に分割するものである。 このクロスコネク ト装置の難点は、 スィッチが電気スィッチであるために例えば 1 5 0 Mbps の信号に落とさねばな らず、そのために特に Gbpsクラスの伝送路のパスの切換えには信号速度をそこま で落とすための DEMUX装置、 切換え後の信号を Gbpsクラスまで上げるための MUX 装置が巨大になることである。 ここで、 本実施の形態 4にて示した光スィッチを 用いれば、 パスクラスの信号速度で切替えが可能であり、 その結果前記 DEMUX装 置並びに MUX装置が不要となり、 全体として小型化、 低コス ト化が期待できる。 このシステムを光クロスコネク 卜システムと呼ぶ。 A cross-connect device virtually divides the transmission bandwidth of an installed physical transmission path into several path capacities. The difficulty with this cross-connect device is that it must be dropped to a 150 Mbps signal, for example, because the switch is an electrical switch. Therefore, especially for switching the path of the transmission line of the Gbps class, a DEMUX device for reducing the signal speed to that extent and a MUX device for increasing the switched signal to the Gbps class become huge. Here, if the optical switch described in the fourth embodiment is used, switching can be performed at a signal speed of a pass class, and as a result, the DEMUX device and the MUX device are not required, and the overall size and size are reduced. Can be expected. This system is called an optical cross-connect system.
しかしながら、 前記低コスト化の鍵を握るのは光スィッチのコス トである。 こ の場合、 4入力 4出力光スィッチや、 8入力 8出力光スィッチが用いられる。 従 来型光スィツチは、 これまでに示してきたようにファイバ実装上の問題があり、 低コス トには実現できなかった。 しかし本発明では、 ファイバ実装が容易にでき るので、 安価に実現できる。 低規模の光スィッチしか簡易にできなくとも、 それ の組み合わせを簡易にできるので、 大規模スィッチが容易に実現できる。 その構 成は第 1 4図または第 1 5図にて示した様にすれば良い。 したがって、 本発明は 特に光部品の大規模化が容易であり、 さらに能動素子のファィバ実装も容易なの で、 他の光スィツチ応用システムに対して特に効果的である。  However, the key to the cost reduction is the cost of the optical switch. In this case, a 4-input 4-output optical switch or an 8-input 8-output optical switch is used. Conventional optical switches have problems with fiber mounting, as described above, and could not be realized at low cost. However, in the present invention, fiber mounting can be easily performed, so that it can be realized at low cost. Even if only a small-scale optical switch can be simplified, the combination can be simplified, so that a large-scale switch can be easily realized. The configuration may be as shown in FIG. 14 or FIG. Therefore, the present invention is particularly effective for other optical switch application systems, because it is easy to increase the scale of optical components and to easily mount active elements with fibers.
なお、 以上のすべての実施の形態においては、 光部品として光ファイバを用い て説明したが、 基板に平行な光を入出射する機能を有するものでありさえすれば よい。  In all of the above embodiments, the description has been made using the optical fiber as the optical component. However, it is only necessary that the optical component has a function of transmitting and receiving light parallel to the substrate.
また同様に、 基板材料としては、 Si— V 溝を用いたが、 同様の溝を精密に加工 された硝子材料や有機材料等でもよい。  Similarly, as the substrate material, the Si-V groove was used, but a glass material, an organic material, or the like in which the similar groove was precisely processed may be used.
以上述べたごとく本発明によれば、 有機材料からなるフィルムを貼付けるとい う簡易な平坦化方法によって、 パッシブァライメントによる光ファイバ実装を極 めて容易に実現できる効果がある。  As described above, according to the present invention, there is an effect that mounting of an optical fiber by passive alignment can be extremely easily realized by a simple flattening method of attaching a film made of an organic material.
産業上の利用可能性 Industrial applicability
本発明は有機材料からなるフィルムを貼付けるという簡易な平坦化方法によつ て、 パッシブァライメントによる光ファイバ実装を極めて容易に実現でき、 産業 上の利用可能性は大きい。  INDUSTRIAL APPLICABILITY According to the present invention, an optical fiber mounting by passive alignment can be realized very easily by a simple flattening method of attaching a film made of an organic material, and the industrial applicability is great.

Claims

請求の範囲 The scope of the claims
1 . 表面に光部品位置決め用凹みを有する基板と、  1. A substrate having an optical component positioning recess on its surface;
前記基板上に前記基板面に平行に光の伝搬方向をもつ有機材料からなる光導波 手段と、  Optical waveguide means made of an organic material having a light propagation direction parallel to the substrate surface on the substrate,
前記基板面に平行に光を入射または出射する機能を有し、 かつ前記位置決め用 凹みにはめ込まれた光部品とを有する導波路型光素子の製造方法において、 表面に光部品位置決め用凹みを有する基板に、 ^機材料からなるフィルムを貼 付ける工程を有することを特徴とする導波路型光素 の製造方法。  A method for manufacturing a waveguide-type optical element having a function of injecting or emitting light parallel to the substrate surface, and having an optical component fitted in the positioning recess, wherein the surface has an optical component positioning recess A method for producing a waveguide-type photoelement, comprising a step of attaching a film made of an organic material to a substrate.
2 . 前記有機材料からなる光導波手段が、 シングルモ一ドであることを特徴とす る請求 ¾ 1に記載の導波路型光素子の製造方法。  2. The method for manufacturing a waveguide-type optical element according to claim 1, wherein the optical waveguide means made of an organic material is a single mode.
3 . 前記有機材料からなるフィルムの直上に、 前記フィルムの屈折率よりも高い 有機材料があり、 且つ前記フィルムの屈折率よりも^い有機材料が光導波路のコ ァであることを特徴とする請求項 1または 2に記載の導波路型光素子の製造方法。  3. An organic material having a refractive index higher than that of the film is provided directly above the film made of the organic material, and the organic material having a refractive index higher than that of the film is a core of the optical waveguide. 3. The method for manufacturing a waveguide optical device according to claim 1 or 2.
4 . 前記光導波路が、 前記入出力端が 2つ以上ある受動素子であることを特徴と する請求項 1乃至 3のいずれか一つに記載の導波路型光素子の製造方法。 4. The method of manufacturing a waveguide-type optical device according to claim 1, wherein the optical waveguide is a passive device having two or more input / output ends.
5 . 前記光導波路の上部または下部に電極が設けられている構成を fTする導波路 型光素了-であって、 前記電極より電気エネルギーを^て光を制御することを特徴 とする請求項 1乃至 4のいずれか一つに記救の導波路 光素子の製造方法。  5. A waveguide-type light source for fT in which an electrode is provided above or below the optical waveguide, wherein light is controlled by applying electric energy from the electrode. The method for manufacturing a waveguide optical device according to any one of 1 to 4.
6 . 前,?己光導波路の上部または下部に電極が,没けられている構成を ^する導波路 型光素子であって、 前記基板が Si基板であり、 かつ前記電極を発熱させ、 それに よる物性変化を利用して光を制御する請求項 5に記載の導波路型光素子の製造方 法。  6. A waveguide-type optical device having a configuration in which electrodes are immersed in the upper or lower part of the optical waveguide, wherein the substrate is a Si substrate, and the electrodes generate heat. 6. The method for manufacturing a waveguide-type optical element according to claim 5, wherein light is controlled by utilizing the change in physical properties.
7 . 前記導波路型光素子であって、 fiii記有機材料からなるフィルムが耐熱性高分 子材料からなり、 かつ前記光導波路の入射または出射端 Mの近傍に設けられた電 極と、 半導体光素子の電極が、 前記光導波路に光学的に接続され、 かつ前記電極 に電気的に接続されたことを特徴とする請求項 ]乃至 4のレ、ずれか一つに記載の 導波路型光素子の製造方法。  7. The waveguide-type optical element, wherein the film made of the organic material fiii is made of a heat-resistant polymer material, and the electrode provided near the entrance or exit end M of the optical waveguide; The electrode of the optical element is optically connected to the optical waveguide, and is electrically connected to the electrode. Device manufacturing method.
8 . 前記光導波路の両端面の導波路間隔が異なる構造を有し、 かつ前記半導体光 素子がアレイ型の素子構造であることを特徴とする請求項 7に記載の導波路型光 素子の製造方法。 8. The optical waveguide has a structure in which both ends of the optical waveguide have different waveguide spacings, and the semiconductor light 8. The method for manufacturing a waveguide-type optical device according to claim 7, wherein the device has an array-type device structure.
9 . 請求項 1乃至 8のうちのいずれか一つの製造方法で製造された前記導波路型 光素子が複数個あり、前記光素子の入出力端が相互に光導波手段で結ばれており、 かつそれら全てが一つのパッケージになっていることを特徴とする導波路型光素 子。  9. A plurality of the waveguide-type optical elements manufactured by the manufacturing method according to any one of claims 1 to 8, wherein input / output ends of the optical elements are connected to each other by optical waveguide means, A waveguide-type photoelement, wherein all of them are in a single package.
1 0 .請求項 5に記載の製造方法で作成した光スィツチをブロテクションスィッ チとして用いることを特徴とする光伝送路システム。  10. An optical transmission line system using an optical switch produced by the manufacturing method according to claim 5 as a protection switch.
1 1 .請求項 5に記載の製造方法で作成した光スィッチを用いることを特徴とす る光クロスコネク ト装 。  11. An optical cross-connect device using an optical switch produced by the manufacturing method according to claim 5.
PCT/JP1996/002631 1996-09-13 1996-09-13 Production method of waveguide type optical device WO1998011460A1 (en)

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KR20040026989A (en) * 2002-09-27 2004-04-01 전자부품연구원 Package module of optical waveguide device by using passive alignment device and method of manufacturing the same
JP2009186979A (en) * 2008-01-07 2009-08-20 Hitachi Chem Co Ltd Method of manufacturing optical waveguide composite substrate
JP2010512016A (en) * 2006-12-05 2010-04-15 韓國電子通信研究院 Planar optical waveguide device, wavelength variable light source including the same, and wavelength division multiplexing based passive optical subscriber network using the light source
JP2011242218A (en) * 2010-05-17 2011-12-01 Advantest Corp Testing device, testing method, and device interface
US8095016B2 (en) 2007-01-30 2012-01-10 Nec Corporation Bidirectional, optical transmitting/receiving module, optical transmitting/receiving device, and bidirectional optical transmitting/receiving module manufacturing method
JP4951971B2 (en) * 2004-01-21 2012-06-13 日本電気株式会社 Photoelectric composite module
JP2014041189A (en) * 2012-08-21 2014-03-06 Fujitsu Ltd Optical connector and method of producing the same

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JPS5915225A (en) * 1982-07-15 1984-01-26 Omron Tateisi Electronics Co Optical switch
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JPH07287141A (en) * 1994-04-14 1995-10-31 Matsushita Electric Ind Co Ltd Optical circuit component and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040026989A (en) * 2002-09-27 2004-04-01 전자부품연구원 Package module of optical waveguide device by using passive alignment device and method of manufacturing the same
JP4951971B2 (en) * 2004-01-21 2012-06-13 日本電気株式会社 Photoelectric composite module
JP2010512016A (en) * 2006-12-05 2010-04-15 韓國電子通信研究院 Planar optical waveguide device, wavelength variable light source including the same, and wavelength division multiplexing based passive optical subscriber network using the light source
US8320763B2 (en) 2006-12-05 2012-11-27 Electronics And Telecommunications Research Institute Planar lightwave circuit (PLC) device wavelength tunable light source comprising the same device and wavelength division multiplexing-passive optical network (WDM-PON) using the same light source
US8095016B2 (en) 2007-01-30 2012-01-10 Nec Corporation Bidirectional, optical transmitting/receiving module, optical transmitting/receiving device, and bidirectional optical transmitting/receiving module manufacturing method
JP2009186979A (en) * 2008-01-07 2009-08-20 Hitachi Chem Co Ltd Method of manufacturing optical waveguide composite substrate
JP2011242218A (en) * 2010-05-17 2011-12-01 Advantest Corp Testing device, testing method, and device interface
JP2014041189A (en) * 2012-08-21 2014-03-06 Fujitsu Ltd Optical connector and method of producing the same

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