WO1998008239A1 - Electrets utilises comme source d'energie - Google Patents
Electrets utilises comme source d'energie Download PDFInfo
- Publication number
- WO1998008239A1 WO1998008239A1 PCT/US1997/014670 US9714670W WO9808239A1 WO 1998008239 A1 WO1998008239 A1 WO 1998008239A1 US 9714670 W US9714670 W US 9714670W WO 9808239 A1 WO9808239 A1 WO 9808239A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electret
- electronic circuit
- charge
- means according
- transduction means
- Prior art date
Links
- 230000026683 transduction Effects 0.000 claims abstract description 14
- 238000010361 transduction Methods 0.000 claims abstract description 14
- 230000015654 memory Effects 0.000 claims description 35
- 230000003068 static effect Effects 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 230000006872 improvement Effects 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 238000013500 data storage Methods 0.000 claims 3
- 229920002313 fluoropolymer Polymers 0.000 claims 1
- 229920000592 inorganic polymer Polymers 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
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- 210000004027 cell Anatomy 0.000 description 5
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
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- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- LFULEKSKNZEWOE-UHFFFAOYSA-N propanil Chemical compound CCC(=O)NC1=CC=C(Cl)C(Cl)=C1 LFULEKSKNZEWOE-UHFFFAOYSA-N 0.000 description 1
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- 229920001169 thermoplastic Polymers 0.000 description 1
- 229940070527 tourmaline Drugs 0.000 description 1
- 229910052613 tourmaline Inorganic materials 0.000 description 1
- 239000011032 tourmaline Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
Definitions
- the present invention relates to improved electronic circuits or transduction means which use an electret to realize a nearly permanent charge and potential source or state.
- a permanent magnet exhibits a permanent external magnetic field.
- An electret exhibits a permanent external electric field. In both cases, the external field is not permanent. However, the fields, either magnetic or electric persist for a very long time.
- a single material can exhibit both a permanent external electric field and a permanent external magnetic field.
- the field associated with a physical condition or structure and the behavior of such field is a complex set.
- the complex set will be called “Field Set” or “Field State” to allow all to keep in mind the complexity and interaction of the complex set.
- Field set does not imply static condition. Field set or state may be time variant.
- DRAM dynamic RAM
- SRAM static RAM
- Dynamic RAM uses a storage cell based on a transistor and capacitor combination in which the digital information is represented by a charge stored on each of the capacitors in the memory array.
- the memory is stored on each of the capacitors in the memory array.
- the memory is "dynamic" in that capacitors are imperfect and will lose their charge unless the charge is repeatedly refreshed every few microseconds.
- Computer circuits repeatedly poll each capacitor. If an individual capacitor is not charged, the circuit leaves it alone and moves on to the next capacitor. If a capacitor is charged, the circuit recharges it and moves on to the next capacitor. As long as the capacitors are continuously refreshed, the information in memory will remain until intentionally changed or the power to the memory is shut off.
- the main advantage of present day RAM is maturity, acceptance and high density due to the need for only a few transistors to realize memory cell.
- RAM needs to be 'refreshed' for retention of memory and needs electricity for retention.
- Static memories in contrast, do not use a charge-storage technique. Instead, they use several transistors to form a flip-flop for each cell in the array. Once data are loaded into the flip-flop storage elements, the flip-flop will indefinitely remain in that state until the information is intentionally changed or the power to the memory circuit is shut off.
- SRAM In SRAM, more transistors are needed but SRAM does not need the constant attention or refresh. SRAM needs electricity.
- Non-volatile memories are semiconductor memories in which the information stays even if power is shut off.
- UV EPROMs ultraviolet- erasable programmable read-only memories
- EEPROMs electrically alterable programmable read-only memories
- NV RAM a memory that combines a static RAM with a non-volatile (NV) memory array, so that for every stored bit there are two memory cells, one of which is volatile and the other non-volatile.
- NV RAM uses the volatile memory array, but when it receives a special signal information held in the RAM area is transferred into the non-volatile section.
- RAM section provides unlimited read and write operations, while the non-volatile section provides backup when power is removed.
- Some SRAM have been combined with some power control circuitry and a button-type long-life battery in a single package.
- this form of NV RAM operates with the characteristics of a static RAM when the system supplies power - fast access times and unlimited reads and writes.
- the control circuitry in the memory package detects the drop, disables the memory's ability to store new data and then switches over the built-in battery to keep the stored data alive until main power returns.
- button-type batteries are relatively large and have a limited life.
- Power sources in general can be thermal, chemical, radiation, such as solar cells, nuclear or run from prime movers. All have advantages and disadvantages.
- a small internal or small external source such as an electret has advantage of being long term and non polluting. No moving parts, reusable.
- the unique discovery of this invention is the use of an electret as the means for realizing a simple reusable non polluting nearly permanent charge state source, charge source or potential source or combination of same.
- An electret can be used to operate many things electronic from displays to oscillators to light sources to amplifiers filters and other electronic circuits as well as used for standby potential or charge source for a non-volatile memory element that can perform equivalent function of static RAM.
- An electret is a solid dielectric with a quasipermanent electric moment.
- Real-charge electrets which similar to a battery hold a charge of one polarity at or near one side of the dielectric and charges of opposite polarity at or near the other side, can store practical charge densities for 20 or more years. While these charge densities are not as large as possible from batteries at the present time, they are more than sufficient to serve as the power source, or charge source, for ultralow-power-consumption static RAMs such as CMOs SRAMs and other low power circuits and can be used in any device which are charges state source, charge source or potential source can benefit.
- Such a circuit can be used in non-volatile random access memory (RAM) device or non-random memory devices.
- RAM non-volatile random access memory
- This purpose is achieved by an improved standby charge source for a non-volatile semiconductor memory including but not limited to static random access memory device. It should be clear many methods are available to those skilled in the art of electronics to exploit such a long term charge, potential charge state source.
- ultralow-power-consu ption static RAMs with a standby current of just l microampere or less) or are easily supplied by electret. If electret is integral then as few as 2 transistors can form cell. It is of course possible some clever designed could do this with one transistor, or with some other type of element.
- FIG. 1 shows a simplified schematic view of an example electret powered RAM, memory location.
- Circuit element 10 is a memory unit such as a CMOS STAM. Element 10 is set to either one of two possible states by SET input 12 and RESET input 14. Element 16 represents an electret power source which powers element 10 whenever its regular power source is shut off or removed.
- An electret power source for an NV RAM can be made in a variety of different ways. For example, and perhaps the simplest configuration, a suitable electret material can be applied to one face of an NV RAM. Another example is to add the electret during manufacture of the integrated circuit (IC) memory. As an IC is built-up layer by layer, layers of a suitable electret material can be included as part of the conventional IC manufacturing process. Of course it should be recognized that those skilled realize that there are various configurations possible to exploit the advantageous properties of field state.
- An electret backup power source for an NV RAM IS both smaller and longer lasting than presently available alternatives. Because the electret power source can be easily made an integral part of the NV RAM, it will simplify the circuity needed for NV RAMs.
- electret power sources need not be limited to NV RAMs, but can be used in any IC device where long lasting power sources are used and where backup power sources are currently not used because of the deficiencies of the present art.
- electrets can be used to bias circuits and transduction devices such as Geiger Counters, proportional radiation counters, and other similar radiation counters, provide operation bias and power to night vision tubes and other micro channel plate devices, bias for x-ray film detectors and x-ray film enhancement, bias and operation for LCDs, electroluminescent, nearly all luminescent, charge center, non linear and other crystal and ceramic structures.
- the permanent external electric field can be used to control materials' formation and separation, and can and has run electrostatic motors. Large and small units in series and parallel can provide spark for ignition and other purposes, provide charge state for particle analysis, for mono atomic gas generation.
- While the electret is useful in standard well known and mature semiconductor work it is also very useful in non standard semiconductor work.
- Some non standard semiconductors include the class of non silicon, non gallium arsenide and the various sensors types. It is important to realize the use of the permanent external electric field of the electret in the growing class of polymeric, mettalo organic and similar semiconductors.
- the electrets useful in the present invention can be made from various inorganic, organic or metalloorganic materials. Any dielectric material including, for example, a thermoplastic polymer resin can be employed. Useful plastics include polyethylene, polypropylene, polytetrafluoroethylene (TEFLON) , etc. Non uniform surfaces can greatly enhance effects. An oriented material can greatly enhance electret effects. More than one oriented or non oriented material can be combined. A single type of material, in different layers of difference or same orientation can greatly enhance effects. Inorganic, organic or metalloorganic materials can be used individually or in admixture. Useful exemplary inorganic materials include barium titanate, lead zirconium titanate and pyroelectric crystals such as tourmaline. Various waxes are exemplary of organic materials.
- the external electric field of an electret provides charge.
- the charge is used to turn on a semiconductor such as a CMOS FET of the type used in modern day circuitry.
- a very small charge is all that is required to cause a CMOS FET to conduct.
- the charge from an electret, being continuous, can be exploited in lieu of the charge provided by a battery.
- a charge is deposited on a floating capacitor and the dielectric can function as an electret. Substantial voltage or duration of voltage is required to establish the charge. By the same token if a memory site so written as a logical "1" is to be set to the other logical value, or "0", then substantial voltage or duration of voltage of the opposite polarity is required.
- a more useful application of the electret is to provide a continuous charge or field which would in other methods be provided by a battery or primary power source.
- the permanent charge can be shunted to be turned off for logical "0" and the shunting removed to return to logical "1".
- An improved electronic circuit method is realized because an electret provides charge all the time and is shunted or shorted if not needed. This differs from a battery which is depleted when used.
- the electret source of charge is not depleted by shorting or shunting.
- An electret of organic polymer is produced by well known methods.
- an organic polymer electret is made with two types of polymer being hydrocarbon and fluorocarbon to take advantage or desirable and complementary properties of both.
- the charge state is impressed on the hybrid electret by means of two different charging methods used at the same time, those being a corona method coupled with controlled breakdown method. Again this is to take advantage of the strengths of both methods.
- the electret is provided with electrodes and is part of a circuit which employs a standard CMOS Fet technology.
- the long term external charge causes the gate to conduct and for the purposes of testing the gate is loaded with capacitance equivalent to the capacitance exhibited by the input nodes of a 4 megabit CMOS SRAM. No battery is required to maintain state of the gate conduction.
- An organic hydrocarbon electret is charged by the dual method used in the example above.
- the hydrocarbon electret is of one chemical type but the material is realized in multiple layer types of differing orientations.
- the different orientations provide a type of composite realized with a single chemical compound type.
- a Liquid Crystal Display (LCD) is placed in proximity with the electret and the external charge causes the liquid crystal to actuate and the display segments become visible.
- the electret is simple shorted or shunted to ground with no significant impact on the longevity of the electret.
- a further classical application the electret material is intentionally made smooth. Many electret applications benefit from an air or dielectric gap or displacement for space charge effects between one or more of the electrodes.
- the "hills and valleys" may be physical or a variable property of the material. Small feature effects such as point discharge and field concentration and fringing effects can be exploited.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Semiconductor Memories (AREA)
Abstract
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2419496P | 1996-08-20 | 1996-08-20 | |
| US60/024,194 | 1996-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998008239A1 true WO1998008239A1 (fr) | 1998-02-26 |
| WO1998008239A8 WO1998008239A8 (fr) | 2001-06-21 |
Family
ID=21819345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1997/014670 WO1998008239A1 (fr) | 1996-08-20 | 1997-08-20 | Electrets utilises comme source d'energie |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1998008239A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833687B2 (en) | 2003-04-18 | 2004-12-21 | Agilent Technologies, Inc. | Electromechanical power converter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5590014A (en) * | 1995-03-16 | 1996-12-31 | Lockheed Martin Corporation | Method and apparatus for supplying electric power |
-
1997
- 1997-08-20 WO PCT/US1997/014670 patent/WO1998008239A1/fr active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5590014A (en) * | 1995-03-16 | 1996-12-31 | Lockheed Martin Corporation | Method and apparatus for supplying electric power |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833687B2 (en) | 2003-04-18 | 2004-12-21 | Agilent Technologies, Inc. | Electromechanical power converter |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998008239A8 (fr) | 2001-06-21 |
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