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WO1998005075A3 - Composant a semi-conducteur a caracteristiques courant/tension lineaires - Google Patents

Composant a semi-conducteur a caracteristiques courant/tension lineaires Download PDF

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Publication number
WO1998005075A3
WO1998005075A3 PCT/SE1997/001222 SE9701222W WO9805075A3 WO 1998005075 A3 WO1998005075 A3 WO 1998005075A3 SE 9701222 W SE9701222 W SE 9701222W WO 9805075 A3 WO9805075 A3 WO 9805075A3
Authority
WO
WIPO (PCT)
Prior art keywords
drift region
doped
gate
voltage characteristics
linear current
Prior art date
Application number
PCT/SE1997/001222
Other languages
English (en)
Other versions
WO1998005075A2 (fr
Inventor
Anders Soederbaerg
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Anders Soederbaerg
Andrej Litwin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M, Anders Soederbaerg, Andrej Litwin filed Critical Ericsson Telefon Ab L M
Priority to CA002261719A priority Critical patent/CA2261719A1/fr
Priority to EP97933940A priority patent/EP0958612A2/fr
Priority to AU37117/97A priority patent/AU3711797A/en
Priority to JP10508731A priority patent/JP2000516396A/ja
Publication of WO1998005075A2 publication Critical patent/WO1998005075A2/fr
Publication of WO1998005075A3 publication Critical patent/WO1998005075A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention porte sur un dispositif à semi-conducteur à caractéristiques courant/tension linéaires depuis l'origine des coordonnées et en outre combiné à une structure bidirectionnelle. Le dispositif type comporte une couche d'oxyde (20) recouvrant un substrat (10) à dopage p-. Au-dessus de la couche d'oxyde est créée une zone de migration de type n- (30) qui constitue une zone de migration de type n- longitudinale. Ladite zone comporte à chacune de ses extrémités un puits de type p- faiblement dopé (32) comportant une partie (31) d'un matériau semi-conducteur à fort dopage p+ assurant le contact soit avec une électrode (35) source soit avec une électrode drain. Chacun des puits de type p- (32) comporte de plus une zone à dopage n+ (33), et une électrode grille (34) le recouvrant, la zone à dopage n+ (33) étant placée dans le puits p- (32) entre une grille et une électrode drain, ou entre une grille et une électrode source. On crée ainsi une structure bidirectionnelle double DMOS à zone de migration commune.
PCT/SE1997/001222 1996-07-26 1997-07-04 Composant a semi-conducteur a caracteristiques courant/tension lineaires WO1998005075A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002261719A CA2261719A1 (fr) 1996-07-26 1997-07-04 Composant a semi-conducteur a caracteristiques courant/tension lineaires
EP97933940A EP0958612A2 (fr) 1996-07-26 1997-07-04 Composant a semi-conducteur a caracteristiques courant/tension lineaires
AU37117/97A AU3711797A (en) 1996-07-26 1997-07-04 Semiconductor component with linear current-to-voltage characteristics
JP10508731A JP2000516396A (ja) 1996-07-26 1997-07-04 線形な電流・電圧特性を備えた半導体部品

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9602880A SE513284C2 (sv) 1996-07-26 1996-07-26 Halvledarkomponent med linjär ström-till-spänningskarasterik
SE9602880-8 1996-07-26

Publications (2)

Publication Number Publication Date
WO1998005075A2 WO1998005075A2 (fr) 1998-02-05
WO1998005075A3 true WO1998005075A3 (fr) 1998-03-05

Family

ID=20403484

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1997/001222 WO1998005075A2 (fr) 1996-07-26 1997-07-04 Composant a semi-conducteur a caracteristiques courant/tension lineaires

Country Status (10)

Country Link
US (1) US5886384A (fr)
EP (1) EP0958612A2 (fr)
JP (1) JP2000516396A (fr)
KR (1) KR100317458B1 (fr)
CN (1) CN1130776C (fr)
AU (1) AU3711797A (fr)
CA (1) CA2261719A1 (fr)
SE (1) SE513284C2 (fr)
TW (1) TW334604B (fr)
WO (1) WO1998005075A2 (fr)

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Publication number Priority date Publication date Assignee Title
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6028337A (en) * 1998-11-06 2000-02-22 Philips North America Corporation Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region
SE9901575L (sv) * 1999-05-03 2000-11-04 Eklund Klas Haakan Halvledarelement
JP2001352070A (ja) * 2000-04-07 2001-12-21 Denso Corp 半導体装置およびその製造方法
GB0314390D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench field effect transistor structure
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
CN100369265C (zh) * 2005-08-26 2008-02-13 东南大学 三维多栅高压p型横向双扩散金属氧化物半导体管
CN100369264C (zh) * 2005-08-26 2008-02-13 东南大学 三维多栅高压n型横向双扩散金属氧化物半导体管
DE102005045910B4 (de) * 2005-09-26 2010-11-11 Infineon Technologies Austria Ag Laterales SOI-Bauelement mit einem verringerten Einschaltwiderstand
US7531888B2 (en) * 2006-11-30 2009-05-12 Fairchild Semiconductor Corporation Integrated latch-up free insulated gate bipolar transistor
EP1965437A1 (fr) * 2007-02-28 2008-09-03 K.N. Toosi University of Technology Dispositif transistor à l'échelle nanométrique doté d'une grande capacité de manipulation du courant
KR101019406B1 (ko) 2008-09-10 2011-03-07 주식회사 동부하이텍 Ｌｄｍｏｓ 소자 제조 방법
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
JP2010278188A (ja) * 2009-05-28 2010-12-09 Renesas Electronics Corp 半導体集積回路装置
US8236640B2 (en) * 2009-12-18 2012-08-07 Intel Corporation Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
CN102403321A (zh) * 2011-09-30 2012-04-04 上海新傲科技股份有限公司 半导体装置及制备方法
KR102016986B1 (ko) * 2013-01-25 2019-09-02 삼성전자주식회사 엘디모스 트랜지스터 기반의 다이오드 및 이를 포함하는 정전기 방전 보호 회로
CN103887332A (zh) * 2013-10-15 2014-06-25 杭州恩能科技有限公司 一种新型功率半导体器件
CN104795438B (zh) * 2015-04-10 2017-07-28 电子科技大学 一种能抑制负阻效应的sa‑ligbt
CN105977288B (zh) * 2016-05-11 2020-05-22 电子科技大学 具有超势垒集电极结构的ligbt器件及其制造方法
CN113690310A (zh) * 2021-07-14 2021-11-23 广东美的白色家电技术创新中心有限公司 Ligbt、制备方法、智能功率模块、驱动电路及电器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205635A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à état passant bipolaire
DD258498A1 (de) * 1987-03-16 1988-07-20 Ilmenau Tech Hochschule Gategesteuertes hochspannungsbauelement mit grosser stromergiebigkeit
EP0331063A1 (fr) * 1988-02-29 1989-09-06 Asea Brown Boveri Ab Commutateur MOS à deux directions
WO1991007781A1 (fr) * 1989-11-09 1991-05-30 Asea Brown Boveri Ab Circuit a semi-conducteurs integre bi-stable
US5356822A (en) * 1994-01-21 1994-10-18 Alliedsignal Inc. Method for making all complementary BiCDMOS devices
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
DE68926384T2 (de) * 1988-11-29 1996-10-10 Toshiba Kawasaki Kk Lateraler Leitfähigkeitsmodulations-MOSFET
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
EP0497427B1 (fr) * 1991-02-01 1996-04-10 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur pour des applications à haute-tension et sa méthode de fabrication
US5286995A (en) * 1992-07-14 1994-02-15 Texas Instruments Incorporated Isolated resurf LDMOS devices for multiple outputs on one die
US5548150A (en) * 1993-03-10 1996-08-20 Kabushiki Kaisha Toshiba Field effect transistor
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
US5710451A (en) * 1996-04-10 1998-01-20 Philips Electronics North America Corporation High-voltage lateral MOSFET SOI device having a semiconductor linkup region

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205635A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à état passant bipolaire
DD258498A1 (de) * 1987-03-16 1988-07-20 Ilmenau Tech Hochschule Gategesteuertes hochspannungsbauelement mit grosser stromergiebigkeit
EP0331063A1 (fr) * 1988-02-29 1989-09-06 Asea Brown Boveri Ab Commutateur MOS à deux directions
WO1991007781A1 (fr) * 1989-11-09 1991-05-30 Asea Brown Boveri Ab Circuit a semi-conducteurs integre bi-stable
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor
US5356822A (en) * 1994-01-21 1994-10-18 Alliedsignal Inc. Method for making all complementary BiCDMOS devices

Also Published As

Publication number Publication date
JP2000516396A (ja) 2000-12-05
SE9602880D0 (sv) 1996-07-26
TW334604B (en) 1998-06-21
KR20000029577A (ko) 2000-05-25
WO1998005075A2 (fr) 1998-02-05
SE513284C2 (sv) 2000-08-14
CA2261719A1 (fr) 1998-02-05
US5886384A (en) 1999-03-23
KR100317458B1 (ko) 2001-12-24
AU3711797A (en) 1998-02-20
CN1231066A (zh) 1999-10-06
CN1130776C (zh) 2003-12-10
SE9602880L (sv) 1998-01-27
EP0958612A2 (fr) 1999-11-24

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