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WO1997026392A1 - Procede pour produire un monocristal de silicium, dont les defauts du cristal sont reduits, et monocristal de silicium produit par ce procede - Google Patents

Procede pour produire un monocristal de silicium, dont les defauts du cristal sont reduits, et monocristal de silicium produit par ce procede Download PDF

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Publication number
WO1997026392A1
WO1997026392A1 PCT/JP1997/000089 JP9700089W WO9726392A1 WO 1997026392 A1 WO1997026392 A1 WO 1997026392A1 JP 9700089 W JP9700089 W JP 9700089W WO 9726392 A1 WO9726392 A1 WO 9726392A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal
silicon single
temperature range
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1997/000089
Other languages
English (en)
Japanese (ja)
Inventor
Kiyotaka Takano
Makoto Iida
Eiichi Iino
Masanori Kimura
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO1997026392A1 publication Critical patent/WO1997026392A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Definitions

  • the present invention relates to a method for producing a silicon single crystal by the Czochralski method with improved oxide film breakdown voltage with high productivity.
  • the present invention has been made in view of such a problem, and an object of the present invention is to obtain a silicon single crystal by the Czochralski method with improved oxide film breakdown voltage with high productivity. Disclosure of the invention
  • the lower limit of the time required to pass through the temperature range from 125 ° C. to 1200 ° C. in the invention of claim 1 is limited by a general CZ pulling apparatus.
  • the present invention clearly indicates a range that can be easily achieved in growing a single crystal and that is more preferable for the invention. Therefore, claim 2 does not limit the scope of the invention described in claim 1.
  • FPD and LSTD defects of a silicon single crystal manufactured by the CZ method can be reduced, and a high-quality crystal excellent in oxide film breakdown voltage can be obtained.
  • the temperature range of 110 ° C to 1080 ° C during the growth of silicon single crystal affects the process of eliminating crystal defects.
  • the temperature range of 125 ° C to 1200 ° C during the growth of single crystal silicon affects the process of forming crystal defect nuclei.
  • the oxide film breakdown voltage introduced during the growth of the single crystal FPD and LSTD defects are 1,250. C-1200.
  • the nucleus is formed in the temperature range of C, and follows the annihilation process in the temperature range of 150 ° C to 1080 ° C.
  • the furnace internal structure for carrying out the present invention regulates the gas flow in the furnace, effectively discharges the generated reaction gas such as Sio, and cools the grown single crystal C,
  • a flow regulating cylinder 2 with its lower end close to the melt surface is provided so as to surround the grown single crystal. ing.
  • the flow path of the inert gas such as Ar introduced from the upper part of the pulling device is defined by the rectifying cylinder, and flows intensively toward the growing single crystal.
  • the effect of cooling the crystal is great.
  • such a rectifying cylinder can cut off radiant heat from the raw material melt surface, the inner wall of the crucible, and further from a heater or the like, so that a single crystal can be grown at a higher speed.
  • a 20-inch quartz crucible is charged with 60 kg of raw material polycrystalline silicon, and a silicon single-crystal rod with a diameter of 6 inches and an orientation of 100 They were grown at an average pulling speed of 6 mmZmin (the straight body length of a single crystal rod was about 85 cm).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Cette invention se rapporte à un monocristal de silicium qui est amélioré en ce qui concerne la résistance diélectrique du film d'oxyde, ce monocristal de silicium étant produit par la méthode Czochralski avec un rendement élevé. Dans le procédé de cette invention, chaque monocristal de silicium dans la phase de croissance du cristal est régulé, pour que le temps nécessaire au silicium pour passer d'une température de l'ordre de 1250 °C à une température de l'ordre de 1200 °C soit de 10 à 20 minutes.
PCT/JP1997/000089 1996-01-19 1997-01-17 Procede pour produire un monocristal de silicium, dont les defauts du cristal sont reduits, et monocristal de silicium produit par ce procede Ceased WO1997026392A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8/26021 1996-01-19
JP2602196A JPH09202684A (ja) 1996-01-19 1996-01-19 結晶欠陥が少ないシリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶

Publications (1)

Publication Number Publication Date
WO1997026392A1 true WO1997026392A1 (fr) 1997-07-24

Family

ID=12182057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/000089 Ceased WO1997026392A1 (fr) 1996-01-19 1997-01-17 Procede pour produire un monocristal de silicium, dont les defauts du cristal sont reduits, et monocristal de silicium produit par ce procede

Country Status (2)

Country Link
JP (1) JPH09202684A (fr)
WO (1) WO1997026392A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0909840A1 (fr) * 1997-10-17 1999-04-21 Shin-Etsu Handotai Company Limited Procédé pour préparer un monocristal de silicium avec peu de défauts cristallins et le monocristal de silicium et plaquettes de silicium ainsi obtenus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101120615B1 (ko) 2003-08-20 2012-03-16 신에쯔 한도타이 가부시키가이샤 단결정의 제조방법 및 실리콘 단결정 웨이퍼

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633236B2 (ja) * 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH06227888A (ja) * 1993-02-03 1994-08-16 Fujitsu Ltd シリコン単結晶の製造方法
JPH07223893A (ja) * 1994-02-14 1995-08-22 Nippon Steel Corp 半導体単結晶およびその製造方法
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633236B2 (ja) * 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH06227888A (ja) * 1993-02-03 1994-08-16 Fujitsu Ltd シリコン単結晶の製造方法
JPH07223893A (ja) * 1994-02-14 1995-08-22 Nippon Steel Corp 半導体単結晶およびその製造方法
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0909840A1 (fr) * 1997-10-17 1999-04-21 Shin-Etsu Handotai Company Limited Procédé pour préparer un monocristal de silicium avec peu de défauts cristallins et le monocristal de silicium et plaquettes de silicium ainsi obtenus
US6027562A (en) * 1997-10-17 2000-02-22 Shin-Etsu Handotai Co., Ltd Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
US6120598A (en) * 1997-10-17 2000-09-19 Shin-Etsu Handotai Co., Ltd. Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method

Also Published As

Publication number Publication date
JPH09202684A (ja) 1997-08-05

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