[go: up one dir, main page]

WO1997006550A1 - Procede de production de particules semi-conductrices - Google Patents

Procede de production de particules semi-conductrices Download PDF

Info

Publication number
WO1997006550A1
WO1997006550A1 PCT/US1996/012655 US9612655W WO9706550A1 WO 1997006550 A1 WO1997006550 A1 WO 1997006550A1 US 9612655 W US9612655 W US 9612655W WO 9706550 A1 WO9706550 A1 WO 9706550A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
electrolytic solution
particles
semiconductor material
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/012655
Other languages
English (en)
Inventor
Harry R. Clark, Jr.
Brian S. Ahern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Priority to AU66459/96A priority Critical patent/AU6645996A/en
Publication of WO1997006550A1 publication Critical patent/WO1997006550A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates to techniques for producing nanometrically-sized materials, and more particularly relates to techniques for producing nanometric crystalline semiconducting material particles.
  • Semiconductor particles, and particularly semiconductor particles having a size in the nanometer regime, i.e., in the range of 1-1000 nanometers, are rapidly gaining interest for their quantum confinement effects, and notably for their luminescence properties.
  • Nanometric particles of the semiconductor silicon are of particular interest for their capability to luminescence in the wavelength regime of visible light. Such silicon luminescence has been reported by, among others. DiMaria et al.. in “Electroluminescence Studies in Silicon Dioxide Films Containing Tiny Silicon Islands.” J. Appl. Phys.. Vol. 56. No. 2, pp. 401-416. July 1984. and has been investigated for luminescence properties induced by both electrical and optical stimuli.
  • Nanocrystallites Superlatt. and Microstr. , Vol. 1 1 , No. 2. pp. 181-184. 1992.
  • a block of semiconductor material is ground in water to produce semiconductor particulates.
  • the minimum size of particulates produced by such a grinding technique or other mechanical attrition processes is fundamentally limited by energy considerations to a size much larger than nanometers, however, for typical semiconductor materials of interest.
  • d, ⁇ ⁇ ER I Y (1)
  • E the Young ' s modulus ofthe material being mechanically processed
  • R the fracture strength ofthe material being processed.
  • particle sizes less than the value of - are plastically deformed, rather than cracked apart, by a mechanical attrition process like grinding.
  • particles of typical semiconductor materials, such as silicon can be mechanically ground to an average size that is no less than on the order of 1 ⁇ m: this size is larger than the nanometric semiconductor particle size now widely desired.
  • this size is larger than the nanometric semiconductor particle size now widely desired.
  • a polycrystalline rod of a semiconductor e.g.. silicon
  • an inert atmosphere such as helium (He).
  • He helium
  • a semiconductor plasma is produced by the laser pulses and is carried by the He into a vacuum system.
  • the He experiences adiabatic cooling in the vacuum, which correspondingly cools the plasma such that it condenses to form semiconductor particles.
  • this process is capable of producing particles having sizes in the range of 1-100 nanometers, the volume of particles produced for a given volume of carrier gas and for a reasonable ablation time is quite small. As a result, an extremely large volume of carrier gas and lengthy ablation process is required to produce a supply of nanoparticles adequate for most applications.
  • a thin, electron-beam deposited layer of amo ⁇ hous silicon can be annealed to crystallize nanometrically-sized crystals in the deposited layer.
  • a deposition technique is inherently limited to produce low volumes of nanocrystals; in this case, the electron-beam deposition process is the limiting process.
  • Nanoparticle production in a deposited layer is further limited in that the produced nanoparticles are bound in the layer and thus are not accessible for processing of particles separated outside of the layer.
  • the invention overcomes the limitations of conventional semiconductor nanoparticle production processes to provide a method for producing semiconductor particles by way of a relatively fast process that does not require large volumes of starting material for producing a reasonable volume of produced semiconductor nanoparticles. Accordingly, in general, the invention provides a method for producing semiconductor particles in which a semiconductor material of the type for which particles are desired is placed in an electrolytic solution of an anodic cell.
  • the anodic cell is configured with a cathode also positioned in the electrolytic solution.
  • the electrolytic solution of the anodic cell includes an etchant and a surfactant that is characterized by an attractive affinity for the semiconductor material.
  • an electrical potential is applied between the semiconductor material in the electrolytic solution and the cathode in the electrolytic solution to anodically etch the semiconductor material.
  • particles ofthe semiconductor material form and are encapsulated by the surfactant.
  • This method for producing semiconductor particles employs an uncomplicated apparatus and procedure that results in inexpensive and high-volume production of particles of a semiconductor material.
  • the cathode ofthe anodic cell consists of a noble metal, preferably platinum.
  • the etchant in the anodic cell electrolytic solution consists of hydrofluoric acid and may also include ammonium fluoride; preferably, the solution also includes a solvent, such as methanol.
  • the surfactant in the electrolytic solution is a compound that is characterized as an alkanolamine. or in other embodiments, that is polyethyleneimine.
  • the electrical potential applied between the semiconductor material and the cathode in the anodic cell electrolytic solution is set at a potential to bias the semiconductor material at a positive electrical voltage with respect to the cathode.
  • the semiconductor material is illuminated while it is positioned in the anodic cell electrolytic solution.
  • the semiconductor particles are separated out of the anodic cell electrolytic solution, preferably by filtering or by centrifuging the particles. In preferred embodiments, the separated semiconductor particles are annealed or etched. In other preferred embodiments, the semiconductor material consists of a semiconductor wafer, preferably of silicon or silicon carbide. Preferably, at least a portion of the semiconductor particles formed by the process of the invention are of a size less than about 1000 nm. preferably less than about 100 nm. and most preferably less than about 10 nm.
  • Semiconductor particles produced by the etching process provided by the invention are particularly well-suited to a wide range of microelectronic applications, including quantum dot microelectronic devices, electroluminescent display devices, photoluminescent display devices, and the many other microelectronic applications for which nanometrically-sized semiconductor particles are used.
  • quantum dot microelectronic devices including quantum dot microelectronic devices, electroluminescent display devices, photoluminescent display devices, and the many other microelectronic applications for which nanometrically-sized semiconductor particles are used.
  • FIG. 1 is a schematic drawing of an anodic cell for producing semiconductor particles in accordance with the invention.
  • Fig. 1 there is shown an apparatus for processing bulk semiconductor material to produce nanometrically-sized semiconductor particles in accordance with the invention.
  • the apparatus is employed as an electrochemical, i.e., anodic, cell 10 in which a bulk semiconductor starting material. e.g.. a semiconductor wafer 12. and a conducting material piece 14 are employed as the anode and cathode of the cell, respectively.
  • a power supply 15 is connected between the semiconductor wafer 12 and the conducting piece 14 to bias the semiconductor wafer 12 to a desired bias voltage with respect to the conducting piece 14 such that the wafer is anodically etched.
  • the semiconductor wafer and conducting material piece are both immersed, or at least partially submerged, in an electrolytic solution 16 consisting of an etchant and possibly a solvent, as is conventional for anodic etch systems, and further including a surfactant that is attracted to the semiconductor material.
  • an electrolytic solution 16 consisting of an etchant and possibly a solvent, as is conventional for anodic etch systems, and further including a surfactant that is attracted to the semiconductor material.
  • the semiconductor bulk material 12 is anodically oxidized and etched at the wafer surface 18.
  • nanoparticles 20 of the semiconductor material are produced.
  • the surfactant is electrically and/or chemically attracted to the nanoparticles and as a result, the surfactant effectively encapsulates each nanoparticle with a surface layer 22 of the surfactant in the electrolytic solution.
  • Such encapsulated nanoparticles do not further etch and do not agglomerate in the solution.
  • the nanoparticles can be separated out of the solution using conventional techniques.
  • the size of the nanoparticles produced in accordance with the invention is controlled in situ by the etching process parameters. This etching process produces a relatively large volume of nanoparticles from a given bulk semiconductor and can do so in a relatively short time.
  • the bulk semiconductor feed material can consist of a wafer 12. e.g., a conventional semiconductor wafer such as a 4-inch wafer.
  • the bulk semiconductor feed material can alternatively consist of a piece of a wafer or a chunk, e.g., a cube or block, of bulk semiconductor material.
  • This semiconductor feed material can be crystalline, polycrystalline. or amo ⁇ hous.
  • the semiconductor feed material can also be provided as a crystalline epitaxial layer ofthe semiconductor of interest.
  • the semiconductor feed material can be provided as a polycrystalline layer ofthe semiconductor of interest. Suitable example epitaxial and deposition processes for producing such crystalline and polycrystalline layers are described by Ghandhi in "VLSI Fabrication Principles.
  • the bulk feed material can consist of a piece of e.g., silicon, germanium, silicon carbide, or other semiconductor, can be n-type, p-type, or compensated, and can be amo ⁇ hous, polycrystalline, or single crystalline of any crystallographic orientation.
  • the back side (not shown) of the bulk semiconductor piece to be etched is metallized for making connection to a wire 24 to connect with the power supply 15.
  • a solution of 1 part hydrofluoric acid to 100 parts deionized water is used to etch off any native oxide residing on the back side of the silicon wafer.
  • a thin layer of metal e.g., a layer of aluminum of about 0.5 ⁇ m in thickness, is sputtered on the back surface: this sputtering is accomplished by way of. e.g., conventional dc magnetron sputtering techniques.
  • a layer of metal is evaporated on the back surface of the wafer by way of conventional metal evaporation techniques, one suitable example evaporation process is given by Wolf and Tauber in "Silicon Processing for the VLSI Era," Vol. 1. Lattice Press, Sunset Beach California, 1986.
  • the metal film is then preferably annealed, e.g., in an inert annealing process consisting of heating at a temperature of about 400°C for about 30 minutes.
  • any suitable metal e.g., nickel, indium, or cadmium, or any suitable metal alloy can be employed as the metallization layer.
  • a metal film is ultrasonically stenciled onto the back side ofthe semiconductor piece to be etched.
  • a metal e.g., indium, or a 1 : 1 indium cadmium alloy, or other suitable metal or metal alloy
  • a metal e.g., indium, or a 1 : 1 indium cadmium alloy, or other suitable metal or metal alloy
  • the semiconductor piece e.g., a wafer
  • the semiconductor piece e.g., a wafer
  • the hot plate is then placed on the hot plate for a time sufficient to reach a temperature greater than the melting point temperature of the metal; e.g., a temperature of about 200°C is sufficient for indium or indium cadmium alloy.
  • the metal is secured to the back surface of the wafer.
  • the wafer is then removed from the hot plate and allowed to cool to room temperature. Any excess indium or indium cadmium is removed from the wafer using a standard hydrochloric solution.
  • a wire preferably a Teflon® (i.e., polytetrafluorocarbon)-coated copper wire, is soldered to the metallized surface ofthe semiconductor piece or wafer to be etched, for connection to a power supply.
  • Any suitable wire gauge can be employed, e.g., a gauge of 18; but a heavier gauge may be desirable for electrochemical cell conditions in which high current densities are anticipated.
  • a wire can be mechanically bonded to the metallized layer, or can be connected by other suitable means as is conventional.
  • an inert material such as wax to protect the metallized surface from the electrochemical etch solution when the piece is immersed in the solution.
  • the semiconductor bulk piece, partial wafer, wafer, or other bulk semiconducting starting material to be etched is then preferably cleaned by way of a standard six-step cleaning process.
  • the semiconductor is processed in a series of the following six washes: 1) 15 minute ultrasonic agitation in a solution of trichloroethane at a temperature of 40°C; 2) 15 minute ultrasonic agitation in a fresh solution of trichloroethane at a temperature of 40°C: 3) 15 minute ultrasonic agitation in a solution of acetone at room temperature; 4) 15 minute ultrasonic agitation in a solution of methanol at room temperature; 5) 15 minute ultrasonic agitation in a solution of isopropanol at room temperature: and 6) 10 minute rinse in deionized water.
  • a semiconductor bulk feed material 12 to be etched is cleaned, it is placed in an electrochemical cell set up as an anode, and a cathode piece 14. e.g., a piece of a conducting material, is likewise positioned in the cell.
  • the cathode consists preferably of a noble metal, most preferably, platinum, or other suitable metal.
  • the cathode piece can take the shape of a solid block, a grid, gauze, or other suitable geometry.
  • a wire 26 is soldered or otherwise electrically connected to the cathode piece for connection to a power supply 15.
  • the semiconductor piece 12 and cathode 14 are submerged or at least partially submerged in an electrolytic solution including an etchant. an optional solvent, and a surfactant that is attracted to the semiconductor material.
  • the surfactant is preferably, but not necessarily, insoluble in the electrolytic solution when combined with etched nanoparticles ofthe semiconductor piece.
  • the solvent is optionally and preferably included, as is conventional in anodic etch systems, to improve etch uniformity during the etching process.
  • nanoparticle etching of a silicon wafer was accomplished using an electrolytic solution consisting of buffered hydrofluoric acid (BHF) etchant. provided by about 27% ammonium fluoride and about 7% hydrofluoric acid, and about 66% surfactant, provided by about 56% water and about 10% of an alkanolamine compound.
  • BHF buffered hydrofluoric acid
  • the etchant component is selected based on the semiconductor being etched.
  • hydrofluoric acid (HF) or BHF is a preferred etchant for anodic etching in accordance with the invention; the etching parameters of HF and BHF are well-characterized.
  • the HF or BHF component of the electrolytic solution preferably is less than about 75% ofthe electrolytic solution volume.
  • BHF can be provided with a buffer like ammonium fluoride, or other suitable fluorine based additive, preferably as a solution component of less than about 50% of solution.
  • a buffering agent like ammonium fluoride is employed to replenish fluorine as it is depleted from the solution during etching. Such a buffering agent is thus not required; for a given etch process, fresh HF can be periodically added to the electrolytic solution.
  • other etchant formulations are suitable for anodic etching like that employed in the particle etch technique ofthe invention. Accordingly, the invention does not contemplate use of only a specific etchant, but rather requires only that a suitable anodic etchant for the semiconductor to be etched be employed.
  • silicon and other like semiconductors can be etched in accordance with the invention with an etchant consisting of. e.g.. a mixture of H 2 SO 4 , H 2 O, and HF. a mixture of ethylene glycol. KNO 2 . H 2 O, and Al(NO 3 ) 3 , or other suitable etchant composition.
  • an etchant consisting of. e.g.. a mixture of H 2 SO 4 , H 2 O, and HF. a mixture of ethylene glycol. KNO 2 . H 2 O, and Al(NO 3 ) 3 , or other suitable etchant composition.
  • the solvent component of the electrolytic solution is employed, as mentioned above, to provide uniformity of etch. Methanol. ethanol. propanol. or other suitable alcohol can be employed.
  • the solvent component is not required, and in some applications, may not be desired.
  • the surfactant component ofthe electrolytic solution is employed to encapsulate semiconductor particles after their formation for inhibiting further etch of the particles, agglomeration of the particles, and redeposit of the particles onto the bulk semiconductor, and for enabling dispersion ofthe particles in the electrolytic solution.
  • the invention does not require a specific surfactant, but rather, contemplates use of a suitable surfactant for a semiconductor being etched.
  • the surfactant is characterized by its electrical and/or chemical attraction to the surface of the semiconductor particles. In other words, the surfactant's affinity for the semiconductor causes it to bond to the semiconductor particles' surfaces.
  • alkanolamines are characterized as those compounds in which nitrogen is attached directly to the carbon of an alkyl alcohol.
  • Suitable example alkanolamines include 2-amino-2-methyl- 1 -propanol (CH 3 (CH 3 )(NH 2 )CH 2 ⁇ H), 2-amino- 2-ethyl- 1.3 -propanediol (HOCH 2 C(C 2 H 8 )(NH 2 )CH 2 OH).
  • alkanolamines and other families of surfactants are suitable for encapsulating etched nanoparticles of silicon or other semiconductors employed in the invention.
  • the particular surfactant e.g., an alkanolamine
  • the surfactant component of the electrolytic solution is preferably included in a range of between, e.g., about 20% to 80% of the total electrolytic solution volume.
  • the surfactant polyethyleneimine can be employed in accordance with the invention for encapsulating particles ofthe semiconductor silicon carbide. This surfactant is available from Chem
  • additives can be included in the electrolytic solution, as will be recognized by those skilled in the art. Such additives are limited in the invention only to the extent that they not inhibit the production of semiconductor particles by the anodic etching process of the invention.
  • the inventors have found at least one commercially available etch solution that provides an adequate etchant and surfactant and thus that can be employed in accordance with the invention for producing semiconductor nanoparticles.
  • the commercial BHF etchants BOE 930 Superwet and BOE 500 Superwet. both available from General Chemical, of Parsippany, New Jersey, contain BHF and an organic surfactant. These etchants are conventionally employed for oxide etching in standard semiconductor fabrication processing techniques.
  • the inventors have found that the BOE 930 Superwet and BOE 500 Superwet etchants, when employed in accordance with the invention as an electrolytic solution in an anodic cell, achieved production and encapsulation of semiconductor nanoparticles on the order of a few nanometers in size.
  • a suitable etchant-solvent-surfactant solution is selected, based on the considerations and examples given above, for a given semiconductor material, with a suitable surfactant being that which is attracted to the given semiconductor such that nanoparticles produced during the etch process are encapsulated by the surfactant and thus do not agglomerate in the solution or redeposit on the etching bulk feed material.
  • a semiconductor bulk material feed piece employed as the anode in an electrolytic cell containing an electrolytic solution like that described above undergoes anodic etching in the cell.
  • a silicon bulk feed piece in an anodic cell including an electrolytic solution of HF and an alkanolamine. as described in the example above, etches in a process in which the silicon is first oxidized by the anodizing current of the cell.
  • the HF in the solution attacks the oxidized silicon, thereby etching away sections ofthe silicon; continuous oxidation occurs as the etching progresses.
  • isolated silicon particles of less than about 1 ⁇ m in size are formed in an anodic electrocrystallisation process. While the specific etch potential and corresponding current density, as explained below, determine the particular size ofthe formed particles, in general it is believed that any level of active anodic etching will produce particles of less than about 1 ⁇ m in size; in experiments using the electrolytic solutions described above for etching silicon nanoparticles. the inventors found the production of silicon particles in the range of several nanometers for a wide range of cell conditions, requiring only the active anodic etching of the silicon.
  • the ultimate equilibrium particle size that is attained during the etching process is further a function of the surface tension of the solution, the density of the particle, and the molecular weight of the semiconductor.
  • the semiconductor nanoparticles may or may not be initially coated with an oxide surface layer.
  • oxide surface layer In the case of silicon, any oxide surface layer that does exist is attacked by the HF in the electrolytic solution. Once removed from the silicon bulk environment, the nanoparticles are isolated from the anodizing current and do not further oxidize or etch.
  • the surfactant e.g., an alkanolamine in the case of silicon
  • the oxide-free silicon nanoparticles is attracted to the oxide-free silicon nanoparticles and encapsulates them separately, whereby agglomeration ofthe nanoparticles does not occur and the particles do not redeposit on the etching wafer.
  • nanoparticles are isolated both from the etch process and from each other.
  • the encapsulated nanoparticles may disperse and form a suspension in the solution or may form a precipitate out of the solution. Supersaturation of the solution with a nanoparticle suspension results in precipitation of the excess nanoparticle volume out of the solution.
  • the anodic etching of the semiconductor bulk material can be maintained, with the considerations given below, until the entire bulk feed material is consumed.
  • a nanoparticle volume yield of at least about 10% of the starting material volume is produced as the etching progresses.
  • the nanoparticles produced in this way are easily separated from the electrolytic solution.
  • the nanoparticle etch technique of the invention thereby provides an elegantly simple, relatively fast and inexpensive, and high-volume process for producing nanometrically-sized semiconductor particles.
  • the volume of electrolytic solution required to etch a given volume of bulk semiconductor starting material is dependent on many factors, including the size of the piece.
  • the example electrolytic solution given above i.e., a solution including a buffered hydrofluoric acid etchant of 27% ammonium fluoride and 7% hydrofluoric acid, and 66% water-alkanolamine. was found to etch about 0.2 grams of silicon.
  • an entire 4-inch silicon wafer was consumed using 500 ml of this electrolytic solution and at least one additional wafer could be processed by this same 500 ml electrolytic solution.
  • the electrolytic solution is preferably maintained at room temperature during the etch process, but other temperatures are acceptable. It must be noted, however, that temperatures below about 50°F may result in precipitation of the surfactant out of the solution. Movement of a semiconductor piece in the solution during an etch process, e.g., ultrasonic agitation of the piece, results in an increase in solution temperature. Such a temperature increase causes a corresponding increase in the etch rate ofthe semiconductor piece. Aside from ultrasonic agitation, simple stirring or other movement ofthe solution produces similar increased etch rates. Bubbling of an inert gas, e.g., nitrogen, may also be employed as a stirring technique.
  • an inert gas e.g., nitrogen
  • a decrease in etch rate is attained by periodic withdrawal and re-immersion of the etching bulk feed material out of and into the electrolytic solution. This is accomplished by. e.g.. lifting of the bulk feed material from the cell, or by lowering of the cell below the feed material if the feed material is anchored at a vertical position.
  • the power supply is set to bias the bulk semiconductor feed piece at a positive potential with respect to the cathode.
  • This potential is in turn set based upon a desired anodizing current density to be established at the surface of the semiconductor material during the etching process.
  • This anodizing current is provided by the closed electrical loop formed of the semiconductor anode 12. the cathode 14, the electrolytic solution 16, which inherently contains ions that conduct current between the anode and cathode, and the electrical connection between the anode and cathode through the power supply 15. which consists of a conventional, commercially available power supply.
  • the anodizing current density at the front side of the wafer is preferably between about 10 mA/cm *" and 100 mA/cm " during the etch process for achieving a controllable etch rate; this sets the semiconductor wafer at a positive bias potential of between about 0.5 V and 10 V.
  • a 20 mA/cm *" anodizing current density was maintained at the 4-inch silicon wafer surface; with this current, the wafer was entirely consumed in about 20 minutes. As is to be expected, higher current densities increase etch rate.
  • the anodizing current density can be as high as several amps/cm " in the vicinity of the etching, which primarily takes place at the electrolyte-air interface. Periodic withdrawal of the semiconductor piece from the electrolytic solution breaks the conductor circuit and decreases the average anodizing current density to reasonable levels to maintain controllable etch progression.
  • the conductivity ofthe material being etched enables the electrochemical etch reaction by providing a conductive path to close the anodic current loop.
  • the current density at the semiconductor etching surface should preferably not fall below 1 nano-amp/cm " , in order to maintain progressing of the anodic etching process.
  • the semiconductor piece is of a high resistance, it then is preferably correspondingly thin, and preferably the entire back side ofthe piece is metallized. For example, a 4-inch silicon wafer anode of about 0.020 inches in thickness and of conventional resistivity provides adequate conductivity.
  • the conductivity of bulk semiconductor pieces or wafers that are of low conductivity can be increased during the etching process by illuminating the back side of the semiconductor with a laser or other high-intensity light source while the semiconductor is immersed in the electrolytic solution. Such illumination creates excess holes at the surface of the material that act as enhanced conductivity pathways.
  • anodic etching of a semiconductor fundamentally requires the presence of electronic holes at the surface of the semiconductor material to enable anodizing oxidation ofthe semiconductor surface.
  • a supply of holes is inherently available in the material.
  • a supply of holes is not available.
  • the necessary supply of holes is in this case necessarily artificially created and can be provided using a laser or other high-intensity light source illuminating the semiconductor.
  • a suitable laser source for this application consists of any laser that produces coherent radiation of a wavelength less than about 700 nanometers and greater than about 100 nanometers.
  • the laser is preferably raster-scanned over the backside ofthe semiconductor surface or employed in combination with a beam expander to illuminate the entire back surface simultaneously.
  • the light source can alternatively consist of, e.g., a tungsten-halogen bulb, xenon arc lamp, or other high-intensity light source.
  • Other considerations for techniques to produce excess holes by surface illumination are described by Lehmann in "The Physics of Macropore Formation in Low Doped n-type Silicon," J.
  • the nanoparticle etch process of the invention provides efficient production of a precipitate or suspension of nanoparticles in the electrolytic etch solution.
  • the nanoparticles are separated out ofthe solution by, e.g.. the following process.
  • the electrolytic solution including the nanoparticles is first diluted by a factor of about 10 with deionized water.
  • the resulting solution is then transferred to a beaker, preferably a Teflon® beaker, connected with a vacuum fitting.
  • the beaker of solution is secured to a vacuum source and then heated gently to a temperature of about 30°C. With this set up. the beaker is evacuated for about 10 hours. This results in evaporation of the solution, whereby the semiconductor nanoparticles are obtained in a dry state.
  • the semiconductor nanoparticles are filtered out of the solution using filter paper secured in a filter holder.
  • a filter pump is employed with a beaker ofthe solution to draw the solution through the filter paper and trap the nanoparticles on the filter paper.
  • the electrolytic solution including the nanoparticles is centrifuged and then the electrolytic solution decanted to remove the solution. Multiple centrifuge operations can be performed, each with the addition of deionized water, to completely separate the particles out of the solution.
  • the electrolytic solution including the nanoparticles is freeze-dried. using conventional freeze- drying techniques, or is simply dried, whereby the solution is removed to produce dried nanoparticles.
  • the surfactant encapsulating the particles can be removed or alternatively, the particles may be employed with the surfactant remaining on the particles. If it is desired to remove the surfactant, a surfactant-dissolving solution, e.g., a solution including an ether or alcohol, is mixed with the nanoparticles, once separated out ofthe electrolytic solution. Agitation ofthe nanoparticles in the solution acts to remove the surfactant from the particles. After conventional rinsing, the particles can then be further processed, for example by terminating their surfaces by reaction with methane, to produce a hydrogen termination, or by other surface termination reaction, as is conventional.
  • a surfactant-dissolving solution e.g., a solution including an ether or alcohol
  • the nanoparticles can be further processed to "fine tune" their dimensions. For example, if it is desired to decrease the size ofthe etched nanoparticles. an etch procedure can be employed. In one such suitable etch procedure, the nanoparticles of, e.g., silicon, are alternately oxidized and subjected to an etchant that attacks the oxide. This oxidation-etch process removes surface layers of the nanoparticles and can be employed multiple times to achieve a precise desired nanoparticle dimension.
  • an etch procedure can be employed. In one such suitable etch procedure, the nanoparticles of, e.g., silicon, are alternately oxidized and subjected to an etchant that attacks the oxide. This oxidation-etch process removes surface layers of the nanoparticles and can be employed multiple times to achieve a precise desired nanoparticle dimension.
  • Oxidation is carried out by, e.g., immersion ofthe nanoparticles in boiling water for about 30 minutes; etch is carried out by, e.g., immersion in a solution of water and HF in a 10:1 ratio for about, e.g., 1 minute.
  • a conventional annealing process can be employed.
  • the nanoparticles are thermally annealed in a conventional annealing furnace at a temperature of about 600°C for a time period of, e.g., about 2 minutes.
  • the nanoparticles can be annealed in a conventional rapid-thermal annealing furnace: a temperature of about, e.g., 800°C and a time of about, e.g., 30 seconds, is adequate.
  • non- thermal annealing process a laser pulses are applied to the nanoparticles. Specific considerations for such an optical annealing process are provided by Sameshima in "Pulsed-Laser Annealing of Silicon Films," Mat. Res. Soc. Symp. Proc, Vol. 283, pp. 679-
  • Semiconductor nanoparticles produced by the foregoing process in accordance with the invention are particularly well-suited to a wide range of microelectronic applications, including quantum dot microelectronic devices, electroluminescent display devices, photoluminescent display devices, and the many other microelectronic applications for which nanometrically-sized semiconductor particles are used.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

Ce procédé de production de particules semi-conductrices consiste à placer un matériau semi-conducteur, du type dont on souhaite obtenir des particules, dans une solution électrolytique d'un élément anodique qui est configuré de façon qu'une cathode soit également placée dans cette solution. Celle-ci comprend un réactif d'attaque et un agent tensio-actif caractérisé par une affinité d'attraction pour le matériau semi-conducteur. Pour produire des particules semi-conductrices à partir de ce matériau, on applique un potentiel électrique entre ledit matériau conducteur placé dans la solution électrolytique et la cathode présente dans cette solution pour procéder à l'attaque anodique du matériau. Pendant ce processus d'attaque, des particules de matériau semi-conducteur se forment et sont enrobées dans l'agent tensio-actif. Ce procédé de production de particules semi-conductrices implique l'utilisation d'un appareillage et d'une procédure simples, ce qui permet de produire, à un faible coût et avec un rendement élevé, des particules du matériau semi-conducteur.
PCT/US1996/012655 1995-08-03 1996-08-01 Procede de production de particules semi-conductrices Ceased WO1997006550A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU66459/96A AU6645996A (en) 1995-08-03 1996-08-01 Method for producing semiconductor particles

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/510,802 US5690807A (en) 1995-08-03 1995-08-03 Method for producing semiconductor particles
US08/510,802 1995-08-03

Publications (1)

Publication Number Publication Date
WO1997006550A1 true WO1997006550A1 (fr) 1997-02-20

Family

ID=24032257

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/012655 Ceased WO1997006550A1 (fr) 1995-08-03 1996-08-01 Procede de production de particules semi-conductrices

Country Status (3)

Country Link
US (1) US5690807A (fr)
AU (1) AU6645996A (fr)
WO (1) WO1997006550A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999027160A1 (fr) * 1997-11-21 1999-06-03 Ppg Industries Ohio, Inc. Composition aqueuse neutralisant le fluorure d'amine pour des pretraitements de metaux contenant une resine organique et procede de pretraitement de metaux
WO2012120117A1 (fr) * 2011-03-09 2012-09-13 Institut National Des Sciences Appliquees De Lyon Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore
CN105428499A (zh) * 2015-11-20 2016-03-23 聚灿光电科技股份有限公司 一种led封装结构的开封方法

Families Citing this family (242)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049090A (en) * 1997-02-10 2000-04-11 Massachusetts Institute Of Technology Semiconductor particle electroluminescent display
KR20010022421A (ko) * 1997-07-28 2001-03-15 추후제출 필터제조방법
US6074546A (en) * 1997-08-21 2000-06-13 Rodel Holdings, Inc. Method for photoelectrochemical polishing of silicon wafers
US6908770B1 (en) 1998-07-16 2005-06-21 Board Of Regents, The University Of Texas System Fluid based analysis of multiple analytes by a sensor array
ATE439452T1 (de) * 1999-05-07 2009-08-15 Life Technologies Corp Verfahren zum nachweis von analyten mit hilfe von halbleiternanokrystallen
US7022517B1 (en) 1999-07-16 2006-04-04 Board Of Regents, The University Of Texas System Method and apparatus for the delivery of samples to a chemical sensor array
ATE346287T1 (de) 1999-07-16 2006-12-15 Univ Texas Verfahren und vorrichtung zur zuführung von proben zu einer chemischen sensormatrix
US6597496B1 (en) 1999-10-25 2003-07-22 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle stimulated emission devices
US6743406B2 (en) * 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6456423B1 (en) 1999-10-22 2002-09-24 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle microcrystal nonlinear optical devices
US20050072679A1 (en) * 1999-10-22 2005-04-07 Nayfeh Munir H. Germanium and germanium alloy nanoparticle and method for producing the same
EP1264202B1 (fr) * 1999-10-22 2005-05-18 Board Of Trustees Of The University Of Illinois Dispositifs d'emission stimules par des nanoparticules de silicium
US6585947B1 (en) 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6984842B1 (en) 1999-10-25 2006-01-10 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle field effect transistor and transistor memory device
US20020009728A1 (en) * 2000-01-18 2002-01-24 Quantum Dot Corporation Oligonucleotide-tagged semiconductor nanocrystals for microarray and fluorescence in situ hybridization
US6245687B1 (en) * 2000-01-26 2001-06-12 Trw Inc. Precision wide band gap semiconductor etching
US7316899B2 (en) * 2000-01-31 2008-01-08 The Board Of Regents Of The University Of Texas System Portable sensor array system
US6480371B1 (en) * 2000-02-01 2002-11-12 Kemet Electronics Corporation Alkanolamine-phosphoric acid anodizing electrolyte
US6571028B1 (en) 2000-03-21 2003-05-27 Evident Technologies Optical switch having a saturable absorber
AU2001249386A1 (en) 2000-03-22 2001-10-03 Quantum Dot Corporation Methods of using semiconductor nanocrystals in bead-based nucleic acid assays
EP1272580A2 (fr) * 2000-04-11 2003-01-08 Cabot Microelectronics Corporation Systeme d'elimination preferentielle d'oxyde de silicium
US6919119B2 (en) 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
EP1327145B1 (fr) 2000-10-06 2009-03-11 Life Technologies Corporation Cellules dotees d'une signature spectrale et procedes de preparation et utilisation desdites cellules
US20050059031A1 (en) 2000-10-06 2005-03-17 Quantum Dot Corporation Method for enhancing transport of semiconductor nanocrystals across biological membranes
US6649138B2 (en) 2000-10-13 2003-11-18 Quantum Dot Corporation Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media
US6697548B2 (en) 2000-12-18 2004-02-24 Evident Technologies Fabry-perot opitcal switch having a saturable absorber
US20020160363A1 (en) * 2001-01-31 2002-10-31 Mcdevitt John T. Magnetic-based placement and retention of sensor elements in a sensor array
US6410934B1 (en) 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches
US6758957B1 (en) * 2001-04-17 2004-07-06 University Of Central Florida Electrochemical deposition of carbon nanoparticles from organic solutions
US7110640B2 (en) 2001-07-19 2006-09-19 Evident Technologies Reconfigurable optical add/drop filter
WO2003092043A2 (fr) * 2001-07-20 2003-11-06 Quantum Dot Corporation Nanoparticules luminescentes et techniques de preparation
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US6794265B2 (en) 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US20030066998A1 (en) 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6906339B2 (en) * 2001-09-05 2005-06-14 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
AU2002352814A1 (en) * 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US6992298B2 (en) * 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) * 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
CA2523626A1 (fr) 2002-04-26 2003-11-06 Board Of Regents, The University Of Texas System Methode et systeme permettant de detecter des facteurs de risque cardiaque
US6899958B2 (en) * 2002-06-21 2005-05-31 Encap Technologies, Llc. Moisture barrier resins
WO2004009840A1 (fr) * 2002-07-24 2004-01-29 Board Of Regents, The University Of Texas System Capture et detection de microbes au moyen de methodes membranaires
WO2004016418A2 (fr) * 2002-08-14 2004-02-26 Encap Technologies, Inc. Particules micro-encapsulatees et nano-encapsulees, resines de protection contre l'humidite, et procedes de fabrication correspondants
DE10240921B4 (de) * 2002-09-02 2007-12-13 Qimonda Ag Verfahren und Anordnung zum selektiven Metallisieren von 3-D-Strukturen
AU2003298998A1 (en) * 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
CN100584921C (zh) 2002-09-05 2010-01-27 奈米系统股份有限公司 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
CA2497451A1 (fr) * 2002-09-05 2004-03-18 Nanosys, Inc. Especes organiques facilitant le transfert de charge depuis ou vers des nanostructures
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7572393B2 (en) 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
US7229498B2 (en) * 2002-10-29 2007-06-12 Midwest Research Institute Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
EP1563530A4 (fr) 2002-11-19 2009-04-29 Univ Rice William M Fabrication de fullerenes recouverts d'une pellicule luminescente et leur application dans le domaine de la luminescence in vivo
AU2003304249A1 (en) 2002-11-19 2005-01-13 William Marsh Rice University Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system
DE10259934B3 (de) * 2002-12-20 2004-10-14 H.C. Starck Gmbh Verfahren zur Herstellung von Formteilen aus Niob oder Tantal durch elektrochemisches Ätzen und so erhältliche Formteile
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
US7083586B2 (en) * 2003-02-03 2006-08-01 Dj Orthopedics, Llc Patellofemoral brace
US20070056465A1 (en) * 2003-03-06 2007-03-15 Rensselaer Polytechnic Institute Rapid generation of nanoparticles from bulk solids at room temperature
US7972616B2 (en) * 2003-04-17 2011-07-05 Nanosys, Inc. Medical device applications of nanostructured surfaces
US20050038498A1 (en) * 2003-04-17 2005-02-17 Nanosys, Inc. Medical device applications of nanostructured surfaces
US7074294B2 (en) * 2003-04-17 2006-07-11 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
US7056409B2 (en) * 2003-04-17 2006-06-06 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
US20060122596A1 (en) * 2003-04-17 2006-06-08 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
US7803574B2 (en) * 2003-05-05 2010-09-28 Nanosys, Inc. Medical device applications of nanostructured surfaces
CN1863954B (zh) * 2003-08-04 2013-07-31 纳米系统公司 制备纳米线复合体的系统和方法及由此得到的电子衬底
DE10336747A1 (de) * 2003-08-11 2005-03-17 Infineon Technologies Ag Halbleiterbauelementanordnung mit einer Nanopartikel aufweisenden Isolationsschicht
CA2549190A1 (fr) 2003-12-11 2005-06-30 Board Of Regents, The University Of Texas System Procede et systeme destines a analyser la salive au moyen d'un reseau de capteurs
US8025960B2 (en) * 2004-02-02 2011-09-27 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US7553371B2 (en) * 2004-02-02 2009-06-30 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US20110039690A1 (en) * 2004-02-02 2011-02-17 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US20060257991A1 (en) * 2004-02-27 2006-11-16 Mcdevitt John T Integration of fluids and reagents into self-contained cartridges containing particle-based sensor elements and membrane-based sensor elements
US8105849B2 (en) 2004-02-27 2012-01-31 Board Of Regents, The University Of Texas System Integration of fluids and reagents into self-contained cartridges containing sensor elements
US20060257854A1 (en) * 2004-02-27 2006-11-16 Mcdevitt John T Membrane assay system including preloaded particles
US7781226B2 (en) * 2004-02-27 2010-08-24 The Board Of Regents Of The University Of Texas System Particle on membrane assay system
US20060257941A1 (en) * 2004-02-27 2006-11-16 Mcdevitt John T Integration of fluids and reagents into self-contained cartridges containing particle and membrane sensor elements
US8101431B2 (en) 2004-02-27 2012-01-24 Board Of Regents, The University Of Texas System Integration of fluids and reagents into self-contained cartridges containing sensor elements and reagent delivery systems
EP1738378A4 (fr) * 2004-03-18 2010-05-05 Nanosys Inc Condensateurs a base de surface de nanofibres
US7459015B2 (en) * 2004-04-16 2008-12-02 Birla Research Institute For Applied Sciences Process for the preparation of a cellulose solution for spinning of fibres, filaments or films therefrom
JP2007535413A (ja) * 2004-04-30 2007-12-06 ナノシス・インコーポレイテッド ナノワイヤ成長および採取のための系および方法
US7785922B2 (en) 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20050279274A1 (en) * 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US8088483B1 (en) 2004-06-08 2012-01-03 Nanosys, Inc. Process for group 10 metal nanostructure synthesis and compositions made using same
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
JP5000510B2 (ja) 2004-06-08 2012-08-15 ナノシス・インク． ナノ構造単層の形成方法および形成デバイスならびにかかる単層を含むデバイス
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
WO2006016914A2 (fr) * 2004-07-07 2006-02-16 Nanosys, Inc. Procedes de croissance de nanofils
US8558311B2 (en) 2004-09-16 2013-10-15 Nanosys, Inc. Dielectrics using substantially longitudinally oriented insulated conductive wires
US7365395B2 (en) * 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
US8089152B2 (en) * 2004-09-16 2012-01-03 Nanosys, Inc. Continuously variable graded artificial dielectrics using nanostructures
WO2006073562A2 (fr) * 2004-11-17 2006-07-13 Nanosys, Inc. Dispositifs et composants photoactifs a efficacite amelioree
US8278011B2 (en) 2004-12-09 2012-10-02 Nanosys, Inc. Nanostructured catalyst supports
CN102593466A (zh) * 2004-12-09 2012-07-18 奈米系统股份有限公司 用于燃料电池的基于纳米线的膜电极组件
US7939218B2 (en) * 2004-12-09 2011-05-10 Nanosys, Inc. Nanowire structures comprising carbon
US7842432B2 (en) * 2004-12-09 2010-11-30 Nanosys, Inc. Nanowire structures comprising carbon
US20060213779A1 (en) * 2005-03-23 2006-09-28 The Board Of Trustees Of The University Of Illinois And The University Of Jordan Silicon nanoparticle formation by electrodeposition from silicate
EP1871162B1 (fr) * 2005-04-13 2014-03-12 Nanosys, Inc. Compositions a dispersion de nanofils et utilisations de ces dernieres
EP1874531A2 (fr) * 2005-04-26 2008-01-09 Nanosys, Inc. Revetements en nanofibres pouvant etre peints
CA2610793A1 (fr) 2005-05-31 2007-05-10 Labnow, Inc. Methodes et compositions en rapport avec la determination et l'utilisation de la numeration de globules blancs
CA2609042A1 (fr) * 2005-06-02 2006-12-07 Nanosys, Inc. Nanofils emettant de la lumiere destines a la macroelectronique
US20070020771A1 (en) * 2005-06-24 2007-01-25 Applied Nanoworks, Inc. Nanoparticles and method of making thereof
JP2009513368A (ja) * 2005-09-23 2009-04-02 ナノシス・インコーポレイテッド ナノ構造体のドーピング方法
AU2006318658B2 (en) 2005-11-21 2011-07-28 Nanosys, Inc. Nanowire structures comprising carbon
US20070141726A1 (en) * 2005-12-19 2007-06-21 Agency For Science, Technology And Research Detection via switchable emission of nanocrystals
US7741197B1 (en) 2005-12-29 2010-06-22 Nanosys, Inc. Systems and methods for harvesting and reducing contamination in nanowires
KR101287350B1 (ko) * 2005-12-29 2013-07-23 나노시스, 인크. 패터닝된 기판 상의 나노와이어의 배향된 성장을 위한 방법
US7431867B2 (en) * 2006-01-27 2008-10-07 Konica Minolta Medical & Graphic, Inc. Nanosized semiconductor particles
KR100742720B1 (ko) 2006-06-07 2007-07-25 한양대학교 산학협력단 화학적 큐어링에 의한 나노입자의 제조방법
US20080245769A1 (en) * 2006-07-17 2008-10-09 Applied Nanoworks, Inc. Nanoparticles and method of making thereof
EP2057211B1 (fr) * 2006-08-31 2013-01-02 Cambridge Enterprise Limited Compositions de nanomatériaux optiques
US8323789B2 (en) 2006-08-31 2012-12-04 Cambridge Enterprise Limited Nanomaterial polymer compositions and uses thereof
JP2010509171A (ja) * 2006-11-07 2010-03-25 ナノシス・インク． ナノワイヤー成長用システム及び方法
US7968474B2 (en) * 2006-11-09 2011-06-28 Nanosys, Inc. Methods for nanowire alignment and deposition
US7786024B2 (en) * 2006-11-29 2010-08-31 Nanosys, Inc. Selective processing of semiconductor nanowires by polarized visible radiation
US20080178920A1 (en) 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
US8530000B2 (en) 2007-09-19 2013-09-10 Micron Technology, Inc. Methods of forming charge-trapping regions
US20090139244A1 (en) * 2007-11-30 2009-06-04 Schlumberger Technology Corporation Devices for cooling and power
US8319002B2 (en) * 2007-12-06 2012-11-27 Nanosys, Inc. Nanostructure-enhanced platelet binding and hemostatic structures
EP2219572A4 (fr) * 2007-12-06 2014-05-28 Nanosys Inc Structures hémostatiques résorbables renforcées par un nanomatériau et matériaux de bandage
BRPI0906429B1 (pt) 2008-01-10 2021-08-03 Research Development Foundation Método de identificação de uma infecção por e. chaffeensis em um indivíduo, uso de um ou mais polipeptídeo sintético e kit
WO2010074787A2 (fr) * 2008-10-03 2010-07-01 Life Technologies Corporation Procédé et appareil pour la synthèse de nanocristaux en écoulement continu
WO2010040032A2 (fr) 2008-10-03 2010-04-08 Life Technologies Corporation PROCÉDÉS DE PRÉPARATION DE NANOCRISTAUX À NOYAU ZnTe
US9978924B2 (en) * 2009-10-09 2018-05-22 Toyota Jidosha Kabushiki Kaisha Method of producing thermoelectric material
US9755128B2 (en) 2008-10-10 2017-09-05 Toyota Motor Engineering & Manufacturing North America, Inc. Method of producing thermoelectric material
US9006133B2 (en) 2008-10-24 2015-04-14 Oned Material Llc Electrochemical catalysts for fuel cells
EP2349918B1 (fr) * 2008-10-24 2018-03-21 Life Technologies Corporation Nanoparticules stables et procédés de production de ces particules
JP5686988B2 (ja) * 2009-05-04 2015-03-18 シャープ株式会社 燃料電池用膜電極複合体に用いられる触媒層、それを用いる燃料電池用膜電極複合体、燃料電池、およびその製造方法
WO2010135446A1 (fr) 2009-05-19 2010-11-25 Nanosys, Inc. Matériaux nanostructurés pour applications de batterie
US20120135158A1 (en) 2009-05-26 2012-05-31 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
EP2270202A1 (fr) 2009-07-03 2011-01-05 John Ikonomopoulos Détection mycobactérienne
BR112012016233A2 (pt) 2009-12-31 2017-03-07 Ventana Med Syst Inc métodos para produzir uma sonda de ácido nucleico, sonda de ácido nucleico isolado e kit
AU2011220792A1 (en) 2010-02-26 2012-07-26 Ventana Medical Systems, Inc. Cytogenic analysis of metaphase chromosomes
ES2606012T3 (es) 2010-02-26 2017-03-17 Ventana Medical Systems, Inc. Hibridación in situ con sondas PolyTag
EP2437061A1 (fr) 2010-09-30 2012-04-04 Ikonomopoulos, John Détection de protéine mycobactérienne
US9577037B2 (en) 2010-12-28 2017-02-21 Life Technologies Corporation Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals
CA2825453C (fr) 2011-03-14 2016-05-10 Ventana Medical Systems, Inc. Procede d'analyse des translocations chromosomiques et systeme associe
JP5951755B2 (ja) 2011-05-04 2016-07-13 エイチティージー モレキュラー ダイアグノスティクス， インコーポレイテッド 定量的ヌクレアーゼプロテクションアッセイ（ｑＮＰＡ）法および定量的ヌクレアーゼプロテクション配列決定（ｑＮＰＳ）法の改善
JP6317670B2 (ja) 2011-08-15 2018-04-25 ザ・ユニバーシティ・オブ・シカゴＴｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｃｈｉｃａｇｏ ブドウ球菌プロテインａに対する抗体に関連した組成物および方法
WO2013057586A1 (fr) 2011-10-19 2013-04-25 Oslo Universitetssykehus Hf Compositions et procédés de production de récepteurs solubles des lymphocytes t
US9177688B2 (en) * 2011-11-22 2015-11-03 International Business Machines Corporation Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
WO2013108126A2 (fr) 2012-01-16 2013-07-25 University Of Oslo Méthyltransférases et leurs utilisations
EP2629095A1 (fr) 2012-02-17 2013-08-21 Biosure R & T Cell Co. Détection de cibles de protéine mycobactérienne incluant des points Quantum et séparation immunomagnétique
NZ702282A (en) 2012-04-26 2016-07-29 Univ Chicago Compositions and methods related to antibodies that neutralize coagulase activity during staphylococcus aureus disease
WO2013167387A1 (fr) 2012-05-10 2013-11-14 Ventana Medical Systems, Inc. Sondes spécifiques uniques pour pten, pik3ca, met, top2a et mdm2
ES2648176T3 (es) 2012-07-12 2017-12-28 INSERM (Institut National de la Santé et de la Recherche Médicale) Métodos de predicción del tiempo de supervivencia y de la respuesta al tratamiento de un paciente que padece un cáncer sólido con un distintivo de al menos 7 genes
WO2014048942A1 (fr) 2012-09-25 2014-04-03 Ventana Medical Systems, Inc. Sondes pour pten, pik3ca, met et top2a, et procédés d'utilisation de ces sondes
US11366061B2 (en) 2013-01-24 2022-06-21 Grace Bio-Labs, Inc. Protein microarray assay imager
ES2935257T3 (es) 2013-03-15 2023-03-03 Univ Chicago Métodos y composiciones relacionadas con la actividad de las células T
WO2015036405A1 (fr) 2013-09-10 2015-03-19 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes de diagnostic et de traitement d'un carcinome basocellulaire
EP3066218B1 (fr) 2013-11-05 2018-12-26 HTG Molecular Diagnostics, Inc. Procédés de détection d'acides nucléiques
JP6825915B2 (ja) 2014-02-24 2021-02-03 ヴェンタナ メディカル システムズ， インク． 標識された２’−ｏ−メチルｒｎａオリゴヌクレオチドプローブ及びシグナル増幅系を使用する自動ｒｎａ検出
EP3009147A1 (fr) 2014-10-16 2016-04-20 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de traitement de glioblastome résistant
JP2018502567A (ja) 2015-01-12 2018-02-01 アンスティチュ ナショナル ドゥ ラ サンテ エ ドゥ ラ ルシェルシュ メディカル 膵臓癌の診断方法
WO2017029391A1 (fr) 2015-08-20 2017-02-23 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle méthode de traitement du cancer
WO2017055327A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules endothéliales dans un échantillon de tissu
WO2017055320A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de quantification de la population de lymphocytes cytotoxiques dans un prélèvement de tissu
WO2017055322A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de neutrophiles dans un prélèvement de tissu
WO2017055319A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules b dans un prélèvement de tissu
WO2017055324A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules d'origine monocytaire dans un prélèvement de tissu
WO2017055326A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules dendritiques myéloïdes dans un prélèvement de tissu
WO2017055321A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de fibroblastes dans un prélèvement de tissu
WO2017055325A1 (fr) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules nk dans un prélèvement de tissu
WO2017060397A1 (fr) 2015-10-09 2017-04-13 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction du temps de survie de sujets souffrant de métastases d'un mélanome
WO2017067944A1 (fr) 2015-10-19 2017-04-27 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction du temps de survie de patientes souffrant du cancer du sein triple négatif
CN114480574A (zh) 2015-11-06 2022-05-13 文塔纳医疗系统公司 代表性诊断
WO2017081073A1 (fr) 2015-11-10 2017-05-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés pour prévoir la durée de survie de patients atteints d'une cirrhose alcoolique décompensée
WO2017096304A1 (fr) 2015-12-04 2017-06-08 Board Of Regents, The University Of Texas System Peptides slc45a2 pour l'immunothérapie
WO2017122039A1 (fr) 2016-01-13 2017-07-20 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes de prédiction de la réponse thérapeutique dans le cancer pancréatique
WO2017182834A1 (fr) 2016-04-19 2017-10-26 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle méthode de traitement d'un glioblastome résistant
US20190292259A1 (en) 2016-05-24 2019-09-26 Inserm (Institut National De La Sante Et De La Recherche Medicale) Methods and pharmaceutical compositions for the treatment of non small cell lung cancer (nsclc) that coexists with chronic obstructive pulmonary disease (copd)
JP2019520071A (ja) 2016-06-14 2019-07-18 アンスティチュ ナショナル ドゥ ラ サンテ エ ドゥ ラ ルシェルシュ メディカル 急性重症大腸炎の処置応答を予測するための方法
WO2018011107A1 (fr) 2016-07-11 2018-01-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Utilisation d'er-alpha 46 dans des procédés et des trousses pour évaluer le statut d'un cancer du sein
WO2018011166A2 (fr) 2016-07-12 2018-01-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de quantification de la population de cellules dendritiques myéloïdes dans un échantillon de tissu
WO2018046736A1 (fr) 2016-09-12 2018-03-15 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction du temps de survie de patients souffrant d'un cancer
WO2018046738A1 (fr) 2016-09-12 2018-03-15 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction du temps de survie de patients souffrant d'un cancer
WO2018054960A1 (fr) 2016-09-21 2018-03-29 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction et de traitement de la résistance à la chimiothérapie dans le lagc à npm-alk(+)
WO2018055080A1 (fr) 2016-09-22 2018-03-29 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes et compositions pharmaceutiques permettant la reprogrammation de l'environnement immunitaire chez un sujet en ayant besoin
WO2018122245A1 (fr) 2016-12-28 2018-07-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction de la durée de survie de patients souffrant d'un cancer colorectal cms3
WO2018122249A1 (fr) 2016-12-28 2018-07-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes permettant de prédire le temps de survie de patients souffrant d'un cancer colorectal stable microsatellitaire
WO2018146239A1 (fr) 2017-02-10 2018-08-16 INSERM (Institut National de la Santé et de la Recherche Médicale) Biomarqueur de pronostic chez des patients atteints de lam
WO2018162404A1 (fr) 2017-03-06 2018-09-13 INSERM (Institut National de la Santé et de la Recherche Médicale) Biomarqueur pour l'issue chez des patients atteints de lam
WO2018172540A1 (fr) 2017-03-24 2018-09-27 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de prédiction de la progression de la maladie d'alzheimer
US11230736B2 (en) 2017-03-29 2022-01-25 Inserm (Institut National De La Santé De La Recherche Médicale) Methods for assessing pregnancy outcome
WO2018189215A1 (fr) 2017-04-12 2018-10-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de prédiction du temps de survie d'un patient souffrant d'un carcinome hépatocellulaire
WO2019038219A1 (fr) 2017-08-21 2019-02-28 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouveau procédé de pronostic du cancer du pancréas
WO2019043138A1 (fr) 2017-09-01 2019-03-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de prédiction de l'issue d'un cancer
CA3081336A1 (fr) 2017-10-12 2019-04-18 Gregory LIZEE Compositions de lymphocytes t pour l'immunotherapie
CN111656179B (zh) 2017-11-13 2023-11-03 豪夫迈·罗氏有限公司 用于使用表位电泳进行样品分析的装置
WO2019207030A1 (fr) 2018-04-26 2019-10-31 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de prédiction d'une réponse à un inhibiteur de point de contrôle immunitaire chez un patient souffrant d'un cancer du poumon
WO2019229489A1 (fr) 2018-05-31 2019-12-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Utilisation de mir-146a-5p et de mir-186 en tant que biomarqueurs de l'arthrose
WO2020089432A1 (fr) 2018-11-02 2020-05-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle méthode de pronostic du cancer du pancréas
WO2020089428A1 (fr) 2018-11-02 2020-05-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle methode de pronostic du cancer du pancréas
WO2020141199A1 (fr) 2019-01-03 2020-07-09 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes et compositions pharmaceutiques pour améliorer les réponses immunitaires dépendantes des lymphocytes t cd8+ chez des sujets souffrant d'un cancer
US20220119516A1 (en) 2019-01-16 2022-04-21 INSERM (Institut National de la Santé et de la Recherche Médicale) Variants of erythroferrone and their use
EP3924520A1 (fr) 2019-02-13 2021-12-22 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés et compositions pour sélectionner un traitement du cancer chez un sujet souffrant d'un cancer
WO2020182932A1 (fr) 2019-03-13 2020-09-17 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelles signatures géniques pour prédire le temps de survie chez des patients souffrant d'un carcinome à cellules rénales
WO2020193740A1 (fr) 2019-03-28 2020-10-01 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle stratégie de traitement du cancer du pancréas
WO2020201362A2 (fr) 2019-04-02 2020-10-08 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes de prédiction et de prévention du cancer chez des patients ayant des lésions prémalignes
JP2022529917A (ja) 2019-04-18 2022-06-27 アンスティチュ ナショナル ドゥ ラ サンテ エ ドゥ ラ ルシェルシュ メディカル ガンの処置及び予後のための方法
US20220290237A1 (en) 2019-04-24 2022-09-15 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for predicting the response of antipsychotic drugs
WO2020229521A1 (fr) 2019-05-14 2020-11-19 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes pour inhiber ou réduire des biolfilms bactériens sur une surface
CN114269916A (zh) 2019-05-14 2022-04-01 豪夫迈·罗氏有限公司 用于样品分析的装置和方法
WO2021001539A1 (fr) 2019-07-04 2021-01-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle stratégie pour détecter et traiter une fasciite à éosinophile
US20220340975A1 (en) 2019-09-05 2022-10-27 INSERM (Institute National de la Santé et de la Recherche Médicale) Method of treatment and pronostic of acute myeloid leukemia
WO2021063968A1 (fr) 2019-09-30 2021-04-08 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé et composition pour diagnostiquer une maladie pulmonaire chronique obstructive
WO2021074391A1 (fr) 2019-10-17 2021-04-22 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de diagnostic d'adénocarcinomes du type intestinal nasal
EP4110955A1 (fr) 2020-02-28 2023-01-04 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de diagnostic, de pronostic et de gestion du traitement du cancer du sein
WO2021186014A1 (fr) 2020-03-20 2021-09-23 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthode de prédiction de la durée de survie d'un patient atteint d'un cancer
US20230250426A1 (en) 2020-06-10 2023-08-10 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for treating and prognosing cancer like glioblastoma
EP4168006A1 (fr) 2020-06-18 2023-04-26 Institut National de la Santé et de la Recherche Médicale (INSERM) Nouvelle stratégie de traitement du cancer du pancréas
WO2022018163A1 (fr) 2020-07-22 2022-01-27 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthode de prédiction du temps de survie de patients atteints d'un cancer
US11827993B1 (en) 2020-09-18 2023-11-28 GRU Energy Lab Inc. Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition
WO2022064049A1 (fr) 2020-09-28 2022-03-31 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé pour diagnostiquer une infection à brucella
WO2022084327A1 (fr) 2020-10-20 2022-04-28 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés pour prédire la réponse à des inhibiteurs du tnf
CN116917502A (zh) 2020-11-06 2023-10-20 Inserm(法国国家健康医学研究院) 诊断和治疗多囊卵巢综合征（pcos）的方法
WO2022135753A1 (fr) 2020-12-21 2022-06-30 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédés de pronostic de la réponse humorale d'un sujet avant la vaccination
WO2022136252A1 (fr) 2020-12-21 2022-06-30 INSERM (Institut National de la Santé et de la Recherche Médicale) Méthodes de pronostic de la réponse humorale d'un sujet avant une vaccination
WO2022152698A1 (fr) 2021-01-12 2022-07-21 INSERM (Institut National de la Santé et de la Recherche Médicale) Utilisation de npdk-d pour évaluer un pronostic du cancer
US20240044901A1 (en) 2021-02-09 2024-02-08 Institut National de la Santé et de la Recherche Médicale New method to pronostic lung cancer
EP4308934A1 (fr) 2021-03-17 2024-01-24 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé permettant de diagnostiquer un cancer du pancréas
WO2022207566A1 (fr) 2021-03-29 2022-10-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouveau procédé pour l'évaluation du pronostic du cancer pancréatique
EP4326903A1 (fr) 2021-04-23 2024-02-28 Inserm (Institut National De La Sante Et De La Recherche Medicale) Procédés et compositions pour le traitement des maladies liées à l'accumulation de sénescence cellulaire
WO2023280790A1 (fr) 2021-07-05 2023-01-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Signatures génétiques pour prédire la durée de survie chez les patients souffrant d'un carcinome des cellules rénales
US11827997B2 (en) * 2021-11-15 2023-11-28 Zju-hangzhou Global Scientific And Technological Innovation Center Stripping method and stripping device for silicon carbide single crystal wafers
WO2023089159A1 (fr) 2021-11-22 2023-05-25 INSERM (Institut National de la Santé et de la Recherche Médicale) Nouvelle stratégie ciblant la diaphonie stroma/cellule tumorale pour traiter un cancer
US20250067745A1 (en) 2022-01-31 2025-02-27 Institut National de la Santé et de la Recherche Médicale Cd38 as a biomarker and biotarget in t-cell lymphomas
WO2023152133A1 (fr) 2022-02-08 2023-08-17 INSERM (Institut National de la Santé et de la Recherche Médicale) Procédé de diagnostic du cancer colorectal
WO2024061930A1 (fr) 2022-09-22 2024-03-28 Institut National de la Santé et de la Recherche Médicale Nouveau procédé de traitement et de diagnostic du lymphome périphérique à cellules t (lcpt)
WO2024115935A1 (fr) 2022-11-29 2024-06-06 Inserm Méthodes de traitement d'un lymphome à cellules b à l'aide d'inhibiteurs de cd39
WO2024236131A1 (fr) 2023-05-17 2024-11-21 Institut National de la Santé et de la Recherche Médicale Stratifié et procédé pour traiter un patient souffrant d'un cancer
WO2024245951A1 (fr) 2023-05-26 2024-12-05 Institut National de la Santé et de la Recherche Médicale Combinaison d'un inhibiteur de slc8a1 et d'un antioxydant ciblant les mitochondries pour le traitement du mélanome
WO2025027127A1 (fr) 2023-08-02 2025-02-06 Institut National de la Santé et de la Recherche Médicale Nouvelle méthode de pronostic d'insuffisance rénale
WO2025045894A1 (fr) 2023-08-28 2025-03-06 Institut National de la Santé et de la Recherche Médicale Méthodes et trousses de diagnostic de cause du syndrome néphrotique et d'orientation de la thérapie
WO2025068340A1 (fr) 2023-09-27 2025-04-03 Institut National de la Santé et de la Recherche Médicale Procédé pour prédire l'évolution d'une leucémie myéloïde aiguë (lma)
WO2025073765A1 (fr) 2023-10-03 2025-04-10 Institut National de la Santé et de la Recherche Médicale Méthodes de pronostic et de traitement de patients souffrant de mélanome
WO2025078632A1 (fr) 2023-10-12 2025-04-17 Institut National de la Santé et de la Recherche Médicale Méthodes de pronostic et de traitement de patients souffrant de cancer
WO2025109147A1 (fr) 2023-11-24 2025-05-30 Institut National de la Santé et de la Recherche Médicale Méthode de prédiction du risque d'événement cardiovasculaire chez un patient atteint de diabète de type 2
WO2025114473A1 (fr) 2023-11-29 2025-06-05 Institut National de la Santé et de la Recherche Médicale Procédé d'évaluation des maladies associées à une perte de fonction de p53 chez des sujets en ayant besoin

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2871174A (en) * 1957-04-25 1959-01-27 Bell Telephone Labor Inc Method for electropolishing semiconducting material
US5227034A (en) * 1990-10-19 1993-07-13 Siemens Aktiengesellschaft Method for electrolytic etching of silicon carbide
EP0622439A1 (fr) * 1993-04-20 1994-11-02 Koninklijke Philips Electronics N.V. Particules semiconductrices dopées par un activateur à l'échelle du quantum
US5442254A (en) * 1993-05-04 1995-08-15 Motorola, Inc. Fluorescent device with quantum contained particle screen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482443A (en) * 1983-12-30 1984-11-13 At&T Technologies Photoelectrochemical etching of n-type silicon
US4931692A (en) * 1987-10-14 1990-06-05 Canon Kabushiki Kaisha Luminescing member, process for preparation thereof, and electroluminescent device employing same
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US4995954A (en) * 1990-02-12 1991-02-26 The United States Of America As Represented By The Department Of Energy Porous siliconformation and etching process for use in silicon micromachining
US5156885A (en) * 1990-04-25 1992-10-20 Minnesota Mining And Manufacturing Company Method for encapsulating electroluminescent phosphor particles
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
US5434878A (en) * 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2871174A (en) * 1957-04-25 1959-01-27 Bell Telephone Labor Inc Method for electropolishing semiconducting material
US5227034A (en) * 1990-10-19 1993-07-13 Siemens Aktiengesellschaft Method for electrolytic etching of silicon carbide
EP0622439A1 (fr) * 1993-04-20 1994-11-02 Koninklijke Philips Electronics N.V. Particules semiconductrices dopées par un activateur à l'échelle du quantum
US5442254A (en) * 1993-05-04 1995-08-15 Motorola, Inc. Fluorescent device with quantum contained particle screen

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999027160A1 (fr) * 1997-11-21 1999-06-03 Ppg Industries Ohio, Inc. Composition aqueuse neutralisant le fluorure d'amine pour des pretraitements de metaux contenant une resine organique et procede de pretraitement de metaux
WO2012120117A1 (fr) * 2011-03-09 2012-09-13 Institut National Des Sciences Appliquees De Lyon Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore
FR2972461A1 (fr) * 2011-03-09 2012-09-14 Inst Nat Sciences Appliq Procede de fabrication de nanoparticules semi-conductrices
CN103635612A (zh) * 2011-03-09 2014-03-12 国立里昂应用科学学院 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法
JP2014518535A (ja) * 2011-03-09 2014-07-31 アンスティテュ、ナショナール、デ、スィアンス、アプリケ、ド、リヨン 冶金級シリコンまたは精錬冶金級シリコンからシリコン系ナノ粒子を製造する方法
US9352969B2 (en) 2011-03-09 2016-05-31 Institut National Des Sciences Appliquees De Lyon Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon
CN103635612B (zh) * 2011-03-09 2017-07-11 国立里昂应用科学学院 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法
CN105428499A (zh) * 2015-11-20 2016-03-23 聚灿光电科技股份有限公司 一种led封装结构的开封方法

Also Published As

Publication number Publication date
AU6645996A (en) 1997-03-05
US5690807A (en) 1997-11-25

Similar Documents

Publication Publication Date Title
US5690807A (en) Method for producing semiconductor particles
Peng et al. Fabrication of single‐crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles
Huang et al. Catalytic growth of zinc oxide nanowires by vapor transport
EP1563547B1 (fr) Nanostructure, dispositif electronique comportant cette nanostructure et procede de preparation de nanostructures
Jung et al. Intense photoluminescence from laterally anodized porous Si
EP1888459A2 (fr) Particules de nanoeponges de silicium
US6943048B2 (en) Method for manufacturing optoelectronic material
US7229498B2 (en) Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
Chen et al. Progress in electrochemical etching of third-generation semiconductors
Bean Silicon molecular beam epitaxy: 1984–1986
Karbassian et al. Formation of luminescent silicon nanowires and porous silicon by metal-assisted electroless etching
KR20220008007A (ko) 실리콘 기판의 금속촉매습식식각 방법
JP2000164921A (ja) 半導体発光材料及びその製造方法並びにこれを用いた発光素子
JP4837465B2 (ja) シリコン微粒子含有液の製造方法およびシリコン微粒子の製造方法
Yanagiya et al. Optical and electrical properties of Al2O3 films containing silicon nanocrystals
Dare-Edwards et al. A novel surface preparation for single-crystal TiO2 and its characterisation by photocurrent-voltage measurements
Wagner Chalcopyrites
EP2279231B1 (fr) Procédé pour la préparation d'une solution optiquement claire de nanocristaux de silicium avec une luminescence à courte longueur d'onde
JP3602212B2 (ja) 発光素子用半導体及びその製造方法
Shieh et al. Some Observations of the Effect of Porous Silicon on Oxidation‐Induced Stacking Faults
Shen et al. Morphological characterization of porous GaP prepared by electrochemical etching
Serin et al. The photocapacitance property of Cu/Cu2O/Au sandwich structures
Kelly et al. Porous‐etched Semiconductors: Formation and Characterization
Fauchet Light-Emitting Porous Silicon: A Status Report
Perumal et al. Investigation on Structural, Optical and Electrical Properties of Pure and Nitrogen-Doped Zinc Oxide Films on Gallium Nitride Substrates: A Template-Assisted Physical Evaporation Approach

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN AM AZ BY KG KZ MD RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA