[go: up one dir, main page]

WO1997000227A1 - Process for producing high-purity chemicals - Google Patents

Process for producing high-purity chemicals Download PDF

Info

Publication number
WO1997000227A1
WO1997000227A1 PCT/JP1996/001629 JP9601629W WO9700227A1 WO 1997000227 A1 WO1997000227 A1 WO 1997000227A1 JP 9601629 W JP9601629 W JP 9601629W WO 9700227 A1 WO9700227 A1 WO 9700227A1
Authority
WO
WIPO (PCT)
Prior art keywords
sulfuric acid
gas
transfer tank
ammonia water
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1996/001629
Other languages
French (fr)
Japanese (ja)
Inventor
Tsutomu Nagase
Teruaki Shirakawa
Takayoshi Ueno
Akira Morisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14732595A external-priority patent/JPH08337416A/en
Priority claimed from JP18705295A external-priority patent/JPH0930803A/en
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of WO1997000227A1 publication Critical patent/WO1997000227A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01CAMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00Ammonia; Compounds thereof
    • C01C1/02Preparation, purification or separation of ammonia
    • C01C1/022Preparation of aqueous ammonia solutions, i.e. ammonia water
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B17/00Sulfur; Compounds thereof
    • C01B17/69Sulfur trioxide; Sulfuric acid
    • C01B17/74Preparation

Definitions

  • the present invention relates to a method for producing high-purity chemicals (such as high-purity sulfuric acid and high-purity ammonia water) that can be suitably used in a semiconductor production process. More specifically, the present invention relates to a high-purity sulfuric acid from which a metal component as an impurity and sulfur dioxide gas (sulfur dioxide S 0 2 ) are highly removed, and a high-purity ammonia water having an extremely low concentration of a metal component as an impurity. And a method for producing the same.
  • high-purity chemicals such as high-purity sulfuric acid and high-purity ammonia water
  • inorganic chemicals such as acids and alcohols
  • organic solvents such as alcohols and ketones
  • wafers including those in the process of being processed into devices.
  • etching, cleaning, peeling, etc. Large-scale integrated circuit to be manufactured by such a semiconductor manufacturing process
  • a semiconductor manufacturing process includes many elemental technologies (oxidation, film growth, etching, etc.).
  • a cleaning operation that is, processing by each elemental technology is performed. It is indispensable to remove various contaminants generated by physical and chemical means. Therefore, in the semiconductor manufacturing process,
  • Sulfuric acid may be used for the purpose of peeling off or removing contaminated organic substances and contaminated metals by oxidation and the like.
  • a metal component as an impurity is present in the sulfuric acid, there is a possibility that the electrical characteristics of the silicon wafer may be reduced or the device performance obtained may be disadvantageously reduced.
  • sulfurous acid gas as an impurity is present in such sulfuric acid, the same disadvantages as described above may occur. Therefore, sulfuric acid used in a semiconductor manufacturing process is required to have a low metal concentration and a low sulfur dioxide gas concentration.
  • a method for producing high-purity sulfuric acid that satisfies such requirements and can be carried out efficiently from an industrial viewpoint.
  • ammonia water may be used as a component of a wafer cleaning liquid for the purpose of removing organic substances and / or heavy metals.
  • Ammonia water used for such applications is required to be highly clean and pure, as in the case of sulfuric acid described above.
  • the presence of metals such as iron, aluminum, sodium, calcium, and magnesium in the ammonia water may significantly reduce the reliability of the obtained semiconductor.
  • high-purity ammonia water in which the concentration of each metal component is controlled to a lower level is required.
  • ammonia water obtained by the conventional method has not always been satisfactory from the viewpoint of the high required level described above.
  • An object of the present invention is to provide a method for producing high-purity sulfuric acid from which metal components and sulfurous acid gas as impurities are highly removed.
  • Another object of the present invention is to provide a method for producing high-purity aqueous ammonia having an extremely low concentration of metal as an impurity. Disclosure of the invention
  • the inventor of the present invention has found that, after the generation of a chemical by gas absorption, the transportation or transfer of the chemical using a liquid pumping system in which the wetted part (a part in contact with the liquid; wetted part) is made of a nonmetallic material. Circulation was found to be extremely effective in achieving the above objectives.
  • the method for producing high-purity sulfuric acid of the present invention is based on the above findings. More specifically, the method comprises contacting water with gaseous sulfuric anhydride which may contain sulfurous acid gas as an impurity, Absorbing water into water to produce sulfuric acid;
  • a liquid storage system for storing the sulfuric acid, a transfer tank for transferring the sulfuric acid, a supply pipe for supplying sulfuric acid to the transfer tank, and the transfer tank.
  • a transfer tank for transferring the ammonia water, a supply pipe for supplying the ammonia water to the transfer tank, and a discharge pipe for discharging the ammonia water from the transfer tank.
  • the present invention provides a method for producing high-purity aqueous ammonia, comprising a pipe.
  • the most significant feature of the present invention having the above-described configuration is that the liquid pumping system in which the liquid contact portion is made of a nonmetallic material transports or circulates the chemical generated by gas absorption.
  • the liquid is rotated from a liquid contact rotating part (or a liquid contact sliding part) such as a bearing constituting the pump into the chemical liquid. It was found that the metal was eluted, increasing the metal concentration in the high-purity chemical.
  • the present inventors have found that using a liquid pumping system in which the liquid contact part is made of a nonmetallic material makes it possible to elute metal into a highly pure chemical solution. It has been found that it is possible to carry out sufficient transportation or circulation while controlling extremely effectively.
  • FIG. 1 is a block diagram of a block diagram showing a schematic configuration of an example of an apparatus for producing high-purity sulfuric acid for carrying out the production method of the present invention.
  • FIG. 2 is a block diagram of a block diagram showing a schematic configuration of another example of a high-purity sulfuric acid production apparatus for carrying out the production method of the present invention.
  • FIG. 3 is a block diagram flow chart showing a schematic configuration of a high-purity sulfuric acid production apparatus used in Example 1 described later.
  • FIG. 4 is a block-type flow diagram showing a schematic configuration of an example of an apparatus for producing high-purity aqueous ammonia for carrying out the production method of the present invention.
  • FIG. 1 is a flow chart showing an example of a high-purity sulfuric acid production apparatus for performing the production method of the present invention.
  • reference numerals are: 1: sulfuric anhydride, 2: water, 3: high-purity sulfuric acid, 4: air, 5: vent, 6: absorption tower, 7: sulfuric acid, 8: cooler, 9: storage Evening, 10: stripping tower, 11: sulfuric acid supply pipe, 12: transfer sunset inlet valve, 13: gas supply pipe, 14: gas inlet valve, 15: gas discharge pipe, 16: gas outlet valve, 17: transfer Tank, 18: transfer tank outlet valve, 19: sulfuric acid discharge pipe.
  • high-purity sulfuric acid (3) is produced from gaseous sulfuric anhydride (1), which may contain sulfurous acid gas as an impurity, and water (2).
  • This manufacturing method includes the following steps (a) to (c).
  • (b) Transporting step A step of transporting and supplying at least a portion of the above-mentioned sulfuric acid to the following stripping step, wherein the sulfuric acid supplied from the absorption tower is transferred to a transfer tank (17) in which the liquid contact part is a nonmetallic material. ), Liquid pressure feed including sulfuric acid supply piping to the transfer tank (11), sulfuric acid discharge piping from the transfer tank (19), gas supply piping to the transfer tank (13), and gas discharge piping from the transfer tank (1.5) Transporting sulfuric acid by the system;
  • the above raw material serving as gaseous sulfur trioxide (S0 3) is not particularly limited, for ease of impurity-removal, the content of sulfur dioxide (S0 2) is less than 100 wt ppm (more 10 ppm by weight The following is preferred.
  • sulfuric anhydride a commercially available sulfuric anhydride can be used, and the commercially available sulfuric anhydride usually contains sulfur dioxide gas at about 10 to 100 ppm by weight.
  • Ultrapure water used as a raw material with sulfuric anhydride (S0 3) described above is preferably-called ultra-pure water.
  • Ultrapure water that can be suitably used in the present invention has a specific resistance of 18 18 ⁇ ⁇ cm or more, a number of fine particles of 10 / ml or less, and a chlorine concentration ⁇ of 10 colonies / ml or less.
  • the absorption tower (6) for bringing sulfuric anhydride and water into contact with each other a conventional one such as a packed tower can be used.
  • the absorption tower is preferably filled with packing such as Raschig rings.
  • gaseous sulfuric anhydride is supplied from the lower part of the absorption tower (packed tower), ultrapure water is supplied from the upper part of the absorption tower, and both are brought into contact in the absorption tower. Good.
  • air may be supplied from the lower part of the absorption tower for the purpose of removing sulfurous acid gas.
  • the absorption tower in this step may also be supplied with sulfuric acid recycled from a transportation step described later, and combined with the ultrapure water, and then contacted with gaseous sulfuric anhydride.
  • the transporting step of the present invention is a step of transporting and supplying at least a part of the sulfuric acid obtained in the absorption step to the following stripping step.
  • the transfer by the pressure of the liquid is basically performed by the same mechanism as that of the biston flow. That is, the gas pushes the liquid out of the tank.
  • the principle of pumping in the present invention is based on Bernoulli's theorem (for details of the theorem, see, for example, Isao Okada, “Chemical Engineering”, pp. 54-59 (1987) Tokyo Denki University Press)
  • the pressure energy (p) of the gas exceeds the sum of the potential energy (Z) and the friction loss (f) of the liquid, the liquid moves (motion).
  • the liquid pressure feeding system that can be suitably used in the present invention includes: a transfer tank (17) whose liquid contact portion is made of a non-metallic material; a sulfuric acid supply pipe (11) to the transfer tank; This system includes a gas supply pipe to the transfer tank (13) and a gas discharge pipe from the transfer tank (15).
  • Non-metallic materials that make up the liquid contacting part of the transfer tank include fluoroplastics such as polytetrafluoroethylene (Teflon) (for example, tetrafluoroethylene-perfluorovinyl ether copolymer (PFA), Tetrafluoroethylene (PTFE) or the like can be suitably used.
  • the gas used in the liquid pumping system is not particularly limited as long as it is a clean gas, but a clean gas such as air or nitrogen is preferable.
  • cleaning gas refers to a gas from which fine particles have been removed.
  • the temperature of the sulfuric acid at the outlet of the cooler installed upstream of the storage tank (9) is preferably 60 to 180 ° C from the viewpoint of stripping.
  • the temperature is 60. If it is less than C, the effect of stripping sulfurous acid gas in sulfuric acid may be insufficient. On the other hand, if the temperature exceeds 18 CTC, elution of metal into sulfuric acid may be accelerated.
  • liquid pumping system is used in the following method.
  • the sulfuric acid in the storage tank (9) is supplied by gravity to the transfer tank (17) through the sulfuric acid supply pipe (11).
  • transfer tank outlet # (18) is closed and sulfuric acid is stored in the transfer tank.
  • the transfer tank inlet valve (12) is closed, the transfer tank outlet valve (18) is opened, and gas is supplied to the transfer tank from the gas supply pipe (13) to the transfer tank. Sulfuric acid is pumped out of the transfer tank.
  • liquid pumping systems are arranged in parallel with the flow of sulfuric acid.
  • the liquid pumping systems are installed in parallel in this way, by shifting the time cycle of each liquid pumping system and operating, a more continuous transport or circulation of sulfuric acid becomes possible.
  • the above operation (such as sequential control of opening and closing of the valve) of the liquid pressure feeding system described above can be automatically performed by using a known automatic control system.
  • At least a part of the sulfuric acid is striped in this step.
  • the remaining sulfuric acid is recycled to the absorption process.
  • sulfuric acid supplied from the transportation step may be stripped with air (4) to remove the sulfuric acid.
  • high-purity sulfuric acid (3) is obtained by separating and removing certain sulfurous acid gas from sulfuric acid.
  • the same one as the absorption tower described in the absorption step can be used.
  • this step for example, it is possible to adopt a method in which sulfuric acid to be stripped is supplied from the upper part of the stripping tower, air is supplied from the lower part of the stripping tower, and both are brought into contact in the stripping tower. . (Other aspects)
  • the stripping step and the transporting step may be as follows as shown in FIG.
  • Stripping process In a stripping tower (10), sulfuric acid (7) supplied from the absorption process is stripped with air (4) to separate and remove sulfurous acid gas that may be contained in sulfuric acid from sulfuric acid. Obtaining high-purity sulfuric acid (3);
  • Transporting step A step of branching and collecting at least a part of the sulfuric acid supplied from the above-mentioned stripping step as product sulfuric acid.
  • the sulfuric acid supplied from the absorption tower is cooled (after being cooled by the cooler (8)) and stored in the storage tank ( 9), the sulfuric acid in the storage tank is further transferred to the transfer tank (17), the sulfuric acid supply pipe to the transfer tank (11), and the sulfuric acid discharge pipe from the transfer tank (19). ),
  • the process of transporting sulfuric acid by a liquid pressure feeding system including a gas supply pipe (13) to the transfer tank and a gas discharge pipe (15) from the transfer tank.
  • the high-purity sulfuric acid obtained by the above-described production method of the present invention can have a metal content of 10 wt% or less and a sulfurous acid gas concentration of 1 wtppm or less.
  • Such high-purity sulfuric acid can be optimally used as a cleaning solution for silicon wafers and the like in a semiconductor manufacturing process.
  • FIG. 4 is a flowchart showing an example of a high-purity ammonia water producing apparatus for carrying out the producing method of the present invention.
  • Transfer tank Transfer tank
  • 27 ammonia water supply pipe
  • 28 ammonia water discharge pipe
  • 29 gas supply pipe
  • 30 gas discharge pipe
  • '31 transfer tank inlet valve
  • 32 transfer tank outlet valve
  • 33 gas inlet Valve
  • 34 gas outlet valve.
  • ammonia gas (21) is
  • This manufacturing method includes the following steps (A) and (B).
  • Circulation step a step in which the ammonia water obtained in the above-mentioned absorption step is led to a cooler (25) to be cooled, and then circulated again to the absorption step, and the liquid contact part is a non-metallic material Transfer tank (26), Ammonia water supply pipe to transfer tank (27), Ammonia water discharge pipe from transfer tank (28), Gas supply pipe to transfer tank
  • a high-precision filter pore size: 0.05 / m or less
  • the other raw material water is ultrapure water as described above (specific resistance is 18 ⁇ ⁇ cm Above) are preferably used.
  • the absorption step is a step of obtaining ammonia water by absorbing ammonia gas into water in an absorption device.
  • the absorber any of an absorption tower and an absorption tank can be used.
  • the absorption tower is a tower-type absorption device filled with packing material
  • the absorption tank is a tank-type absorption device having a blow-out portion of ammonia gas in a lower part.
  • the absorption step a known step generally used in the production of aqueous ammonia can be used.
  • the ammonia gas is absorbed by water to produce ammonia water.
  • a considerable amount of heat of absorption is generated due to the absorption of the ammonia gas, and the temperature of the ammonia water rises. Therefore, in order to increase the concentration of the aqueous ammonia, it is preferable to provide a circulation step of recirculating the aqueous ammonia to the absorption step while cooling the aqueous ammonia.
  • the ammonia water obtained in the absorption step is guided to a cooler (25) to be cooled, and then circulated again to the absorption step, wherein the liquid contact part is a nonmetallic material Transfer tank (26), ammonia water supply pipe to transfer tank (27), ammonia water discharge pipe from transfer tank (28), gas supply pipe to transfer tank (29) and transfer tank
  • the ammonia water is circulated by the liquid pumping system including the gas discharge pipe (30).
  • cooler including a known heat exchanger or the like can be used without particular limitation.
  • the liquid pumping system in the embodiment of FIG. 4 includes a transfer tank (26) in which the liquid contact portion is made of a non-metallic material, an ammonia water supply pipe (27) to the transfer tank, and an ammonia water discharge pipe (2) from the transfer tank. 8), gas supply piping to the transfer tank (29) and transfer ⁇
  • This system includes a gas discharge pipe (30) from the feed tank.
  • a fluorine resin such as polytetrafluoroethylene (Teflon) can be exemplified as in the case of the above-mentioned sulfuric acid production.
  • a clean gas such as air or nitrogen is preferable as in the case of the above-mentioned sulfuric acid production.
  • the pressure of the gas is preferably about 1.0 to 1.9 kgZcm 2 .
  • a preferred method of using the above liquid pumping system is as follows.
  • the ammonia water generated by the absorption device (24) is supplied to the transfer tank (26) by gravity through the ammonia water supply pipe (27).
  • the transfer tank outlet valve (32) is closed and ammonia water is stored in the transfer tank.
  • the transfer tank inlet valve (31) is closed, the transfer tank outlet valve (32) is opened, and gas is supplied to the transfer tank from the gas supply pipe (29) to the transfer tank.
  • the ammonia water inside is pumped out from the transfer tank.
  • liquid pumping systems are arranged in parallel with the flow of ammonia water.
  • a more continuous circulation of the ammonia water is made possible by operating the liquid pumping system and the time cycle of each unit at a different time.
  • the above operation of the liquid pumping system can be automatically performed by using a known automatic control system.
  • Example 1 Referring to FIG. 3, 200 kg of 89% by weight sulfuric acid was injected into a Teflon tank (capacity: 200 L).
  • the above impurity analysis was performed by the ICP-MS method. More specifically, after the sample solution to be treated is divided into fine mist by a nebulizer, a metal element in the sample solution is ionized using an inductively coupled plasma (ICP), and the ionized element is ionized. Was separated by mass using the mass spectrometer described above, and the types and amounts of metal elements in the sample solution were determined.
  • ICP inductively coupled plasma
  • the sulfuric acid in the tank 9 was heated to a liquid temperature of 80 using the liquid pumping system shown in FIG. C, liquid circulation was performed at an average flow rate of 8 L / hr for 24 hours.
  • the liquid pumping system used here consists of a storage tank 9 (capacity: 20 L) made of Teflon, the liquid contact part of which is a non-metallic material, a sulfuric acid supply pipe 11 to the transfer tank 17, and a sulfuric acid discharge pipe from the transfer tank 17. 19, a gas supply pipe 13 to the transfer tank 17, and a gas discharge pipe 15 from the transfer tank.
  • the components of the liquid pumping system were made of stainless steel, but their wetted parts were all coated with Teflon-lining (thickness: about 3 mm). Clean air with a pressure of 2.0 kg / cm 2 G was used as the gas for the liquid pumping system.
  • the content of gold in the aqueous ammonia was measured by the same ICP-MS method as in Example 1. As a result, constant values of 5 wt% of iron, 5 wt% of aluminum, and 1 wt% of calcium were obtained.
  • Example 2 Except that a commercially available centrifugal pump was used instead of the liquid pumping system used in Example 2. Produced ammonia water in the same manner as in Example 2.
  • the metal content in the ammonia water thus obtained was 13 weight parts per weight of iron, 3 weight parts per million of aluminum, and 5 weight parts per billion of calcium. Industrial applicability
  • an absorption step in which water is brought into contact with gaseous sulfuric anhydride which may contain a sulfurous acid gas as an impurity, and the sulfuric anhydride is absorbed in water to generate sulfuric acid.
  • a liquid storage system for storing the sulfuric acid, a transfer tank for transferring the sulfuric acid, a supply pipe for supplying sulfuric acid to the transfer tank, and the transfer tank.
  • a method for producing high-purity sulfuric acid comprising: a discharge pipe for discharging sulfuric acid; a gas supply pipe for supplying gas to the transfer tank; and a gas discharge pipe for discharging gas from the transfer tank.
  • a transfer tank for transferring the ammonia water, a supply pipe for supplying the ammonia water to the transfer tank, and a discharge pipe for discharging the ammonia water from the transfer tank.
  • the present invention provides a method for producing high-purity aqueous ammonia, comprising a pipe.
  • the present invention is a high-purity sulfuric acid from which a metal component as an impurity and a sulfurous acid gas have been highly removed, or a high-purity ammonia water from which a metal component as an impurity has been highly removed, Sulfuric acid or high-purity ammonia water that can be optimally used in a semiconductor manufacturing process can be manufactured.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Treating Waste Gases (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Gas Separation By Absorption (AREA)

Abstract

A process for producing high-purity chemicals, such as high-purity sulfuric acid or high-purity ammonia water, suitable for use in semiconductor manufacture. High-purity sulfuric acid is produced via the absorption step wherein water is brought into contact with gaseous sulfuric anhydride, the stripping step where sulfurous acid gas is separated and removed, and the transporting step conducted through a liquid pumping system wherein the liquid-containing section is made from non-metallic material. High-purity ammonia water is produced via the absorption step wherein ammonia gas is absorbed in water and the step of cooling ammonia water and recirculating the same to the absorption step by utilizing the liquid pumping system wherein the liquid-contacting section is made from non-metallic material. The liquid pumping system is composed of a tank for reserving high-purity chemicals, a transfer tank, supply and discharge pipings, a piping for supplying gases to the transfer tank, and a piping for discharging gases from the transfer tank. This process provides high-purity sulfuric acid and ammonia water freed extremely from impurities such as metals and sulfurous acid gas.

Description

9 曰月 糸田 » 高純度化学薬品の製造方法 技術分野  9 Saito Itoda »High Purity Chemical Manufacturing Method Technical Field

本発明は、 半導体製造プロセスに好適に使用可能な高純度化学薬品 (高純度硫 酸、 高純度アンモニア水等) の製造方法に関する。 より具体的には、 本発明は、 不純物たる金属分および亜硫酸ガス (二酸化イオウ S 02) が高度に除去さた 高純度の硫酸、 および不純物たる金属分の濃度が極めて低い高純度のアンモニア 水の製造方法に関する。 背景技術 The present invention relates to a method for producing high-purity chemicals (such as high-purity sulfuric acid and high-purity ammonia water) that can be suitably used in a semiconductor production process. More specifically, the present invention relates to a high-purity sulfuric acid from which a metal component as an impurity and sulfur dioxide gas (sulfur dioxide S 0 2 ) are highly removed, and a high-purity ammonia water having an extremely low concentration of a metal component as an impurity. And a method for producing the same. Background art

半導体の製造プロセスにおいては、 酸やアル力リを中心とした無機化学薬品類 や、 アルコールゃケトン等の有機溶剤類が、 ウェハ (デバイスへの処理途中の状 態をも含む、 以下の記載において同様) のエッチング、 洗浄、 剥離等に使用され ている。 このような半導体製造プロセスによって製造されるべき大規模集積回路 In the semiconductor manufacturing process, inorganic chemicals such as acids and alcohols, and organic solvents such as alcohols and ketones are used in wafers (including those in the process of being processed into devices). The same is used for etching, cleaning, peeling, etc. Large-scale integrated circuit to be manufactured by such a semiconductor manufacturing process

( L S I ) が高密度 '高集積化するにつれて、 種々のコン夕ミネ一シヨン (汚染) が、 半導体製品の歩留まりや品質、 信頼性に影響を及ぼすようになって来ている。 したがって、 半導体製造プロセスに使用されるべき薬品自体にも、 不純物が少な く、 できる限り高純度であることが要請されるようになって来ている。 As (LSI) becomes denser and more highly integrated, various types of contamination (contamination) are affecting the yield, quality, and reliability of semiconductor products. Therefore, it has been required that the chemicals to be used in the semiconductor manufacturing process themselves have few impurities and have as high a purity as possible.

通常、 半導体製造プロセスは多くの要素技術 (酸化、 膜成長、 エッチング等) 技術を包含しているが、 これらの要素技術の間をつなぐために洗浄操作、 すなわ ち、 各要素技術による処理に基づいて生ずる種々の汚染を、 物理的 ·化学的手段 により除去 ること、 が必須となる。 したがって、 半導体製造プロセスにおいて、 Normally, a semiconductor manufacturing process includes many elemental technologies (oxidation, film growth, etching, etc.). However, in order to connect these elemental technologies, a cleaning operation, that is, processing by each elemental technology is performed. It is indispensable to remove various contaminants generated by physical and chemical means. Therefore, in the semiconductor manufacturing process,

「洗浄」 は最も基本的、 且つ必須の技術である。 “Washing” is the most basic and essential technology.

半導体プロセスにおいてシリコンウェハの洗浄液成分として、 例えば、 レジス ト剥離や、 汚染有機物、 汚染金属を酸化等により除去する目的で、 硫酸が使用さ れる場合がある。 しかしながら該硫酸に不純物としての金属分が存在すると、 上 記シリコンウェハの電気特性を低下させたり、 得られるデバイス性能を低下させ るという不都合が生じる虞がある。 また、 このような硫酸中に不純物としての亜 硫酸ガスが存在する場合にもと、 上記と同様の不都合が生じる虞がある。 したが つて、 半導体製造プロセスにおいて用いられる硫酸は、 金属分濃度が低く、 かつ 亜硫酸ガス濃度が低いことが要求される。 しかしながら、 このような要求を満足 し、 かつ工業的観点からも効率的に実施できる高純度硫酸の製造方法は、 未だ見 出されていない。 As a cleaning liquid component for silicon wafers in semiconductor processes, for example, Sulfuric acid may be used for the purpose of peeling off or removing contaminated organic substances and contaminated metals by oxidation and the like. However, if a metal component as an impurity is present in the sulfuric acid, there is a possibility that the electrical characteristics of the silicon wafer may be reduced or the device performance obtained may be disadvantageously reduced. In addition, in the case where sulfurous acid gas as an impurity is present in such sulfuric acid, the same disadvantages as described above may occur. Therefore, sulfuric acid used in a semiconductor manufacturing process is required to have a low metal concentration and a low sulfur dioxide gas concentration. However, there has not yet been found a method for producing high-purity sulfuric acid that satisfies such requirements and can be carried out efficiently from an industrial viewpoint.

—方、 半導体製造プロセスにおいて、 有機物および/又は重金属を除去する目 的で、 ウェハの洗浄液の一成分としてアンモニア水が用いられる場合がある。 こ のような用途に使用されるアンモニア水には、 上記した硫酸の場合と同様に、 高 度に清浄で純粋であることが要求される。 特に、 アンモニア水に鉄、 アルミニゥ ム、 ナトリウム、 カルシウム、 マグネシウム等の金属分が存在すると、 得られる 半導体の信頼性を著しく低下させる虞がある。 上記したように、 半導体の信頼性 に対する要求水準は、 近年において一層高度化されつつあり、 そのためには、 各 金属成分の濃度を一層低い水準に制御した高純度のアンモニア水が必要とされて いる。  —On the other hand, in the semiconductor manufacturing process, ammonia water may be used as a component of a wafer cleaning liquid for the purpose of removing organic substances and / or heavy metals. Ammonia water used for such applications is required to be highly clean and pure, as in the case of sulfuric acid described above. In particular, the presence of metals such as iron, aluminum, sodium, calcium, and magnesium in the ammonia water may significantly reduce the reliability of the obtained semiconductor. As mentioned above, the required level of reliability of semiconductors has been further enhanced in recent years, and for that purpose, high-purity ammonia water in which the concentration of each metal component is controlled to a lower level is required. .

しかしながら、 従来の方法により得られるアンモニア水は、 上記の高度な要求 水準の観点からは、 必ずしも満足し得ないものであった。  However, the ammonia water obtained by the conventional method has not always been satisfactory from the viewpoint of the high required level described above.

本発明の目的は、 不純物である金属分および亜硫酸ガスが高度に除去された高 純度硫酸の製造方法を提供することにある。  An object of the present invention is to provide a method for producing high-purity sulfuric acid from which metal components and sulfurous acid gas as impurities are highly removed.

本発明の他の目的は、 不純物たる金厲分の濃度が極めて低い高純度アンモニア 水の製造方法を提供することにある。 発明の開示 Another object of the present invention is to provide a method for producing high-purity aqueous ammonia having an extremely low concentration of metal as an impurity. Disclosure of the invention

本発明者は鋭意研究の結果、 ガス吸収による化学薬品生成後に、 接液部 (液体 に接触する部分; wetted part) を非金属材料で構成してなる液体圧送システム を用いて該薬品の輸送ないし循環を行うことが、 上記目的の達成に極めて有効で あることを見いだした。  As a result of intensive studies, the inventor of the present invention has found that, after the generation of a chemical by gas absorption, the transportation or transfer of the chemical using a liquid pumping system in which the wetted part (a part in contact with the liquid; wetted part) is made of a nonmetallic material. Circulation was found to be extremely effective in achieving the above objectives.

本発明の高純度硫酸の製造方法は上記知見に基づくものであり、 より詳しくは、 水と、 不純物として亜硫酸ガスを含有していてもよい気体状の無水硫酸とを接触 させて、 該無水硫酸を水に吸収させて硫酸を生成させる吸収工程と ;  The method for producing high-purity sulfuric acid of the present invention is based on the above findings. More specifically, the method comprises contacting water with gaseous sulfuric anhydride which may contain sulfurous acid gas as an impurity, Absorbing water into water to produce sulfuric acid;

前記硫酸を空気でストリッビングして、 該硫酸中の亜硫酸ガスを分離除去する 'スト リッビング工程と ;  Stripping the sulfuric acid with air to separate and remove sulfurous acid gas in the sulfuric acid;

前記硫酸の少なくとも一部分を、 接液部が非金属材料からなる液体圧送システ ムにより輸送する輸送工程とを含み;  Transporting at least a portion of the sulfuric acid by a liquid pumping system in which a liquid contact part is made of a nonmetallic material;

且つ、 前記液体圧送システムが、 前記硫酸を貯留するための貯留タンクと、 前 記硫酸を移送するための移送タンクと、 該移送タンクへ硫酸を供給するための供 給配管と、 前記移送タンクから硫酸を排出するための排出配管と、 前記移送タン クへ気体を供給するための気体供給配管と、 前記移送タンクから気体を排出する ための気体排出配管とからなることを特徴とするものである。  And a liquid storage system for storing the sulfuric acid, a transfer tank for transferring the sulfuric acid, a supply pipe for supplying sulfuric acid to the transfer tank, and the transfer tank. A discharge pipe for discharging sulfuric acid, a gas supply pipe for supplying gas to the transfer tank, and a gas discharge pipe for discharging gas from the transfer tank. .

本発明によれば、 更に、 アンモニアガスを水に吸収させることによりアンモニ ァ水を生成させる吸収工程と ;  According to the present invention, further, an absorption step of generating ammonia water by absorbing ammonia gas into water;

前記吸収工程で生成したアンモニア水を冷却した後、 再度吸収工程へ循環させ る工程であって、 該循環を、 接液部が非金属材料からなる液体圧送システムによ り行う工程とを含み;  Cooling the ammonia water generated in the absorption step and then circulating the ammonia water to the absorption step again, the method including a step of performing the circulation by a liquid pumping system in which a liquid contact part is made of a nonmetallic material;

且つ、 前記液体圧送システムが、 前記アンモニア水を移送するための移送タン クと、 該移送タンクへアンモニア水を供給するための供給配管と、 前記移送タン クからアンモニア水を排出するための排出配管と、 前記移送タンクへ気体を供給 するための気体供給配管と、 前記移送夕ンクから気体を排出するための気体排出 配管とからなることを特徴とする高純度アンモニア水の製造方法が提供される。 上記した構成を有する本発明の最大の特徴は、 接液部を非金属材料で構成した 液体圧送システムによって、 ガス吸収により生成した薬品の輸送ないし循環を行 う点に存する。 すなわち、 本発明者の研究によれば、 従来の方法において高純度 薬液 (硫酸、 アンモニア水等) 中の金属濃度を充分に低い水準に制御することが 困難であつたのは、 遠心ポンプ等の接液駆動部 (回転部分、 摺動部分等) を有す る要素を用いて、 該高純度薬液の輸送ないし循環を行っていたことに基づくこと を見いだした。 And a transfer tank for transferring the ammonia water, a supply pipe for supplying the ammonia water to the transfer tank, and a discharge pipe for discharging the ammonia water from the transfer tank. A gas supply pipe for supplying gas to the transfer tank; and a gas discharge for discharging gas from the transfer tank. The present invention provides a method for producing high-purity aqueous ammonia, comprising a pipe. The most significant feature of the present invention having the above-described configuration is that the liquid pumping system in which the liquid contact portion is made of a nonmetallic material transports or circulates the chemical generated by gas absorption. That is, according to the research of the present inventor, it was difficult to control the metal concentration in a high-purity chemical solution (sulfuric acid, ammonia water, etc.) to a sufficiently low level in the conventional method because of the problem of centrifugal pumps and the like. It has been found that it is based on transporting or circulating the high-purity chemical solution using an element having a liquid contact drive unit (rotating part, sliding part, etc.).

より具体的には、 本発明者らの研究によれば、 従来の高純度薬液製造システム においては、 上記ポンプを構成するベアリング等の接液回転 (ないし接液摺動) 部から該薬液中に金属分が溶出し、 高純度薬液中の金属濃度を高めていたことが 見いだされた。 本発明者らは、 このような知見に基づいて更に研究を進めた結果、 接液部を非金属材料で構成した液体圧送システムを用いることが、 金属分の高純 度薬液中への溶出を極めて効果的に抑制しつつ、 充分な輸送ないし循環を可能と することを見いだした。 図面の簡単な説明  More specifically, according to the study of the present inventors, in the conventional high-purity chemical liquid manufacturing system, the liquid is rotated from a liquid contact rotating part (or a liquid contact sliding part) such as a bearing constituting the pump into the chemical liquid. It was found that the metal was eluted, increasing the metal concentration in the high-purity chemical. As a result of further research based on such findings, the present inventors have found that using a liquid pumping system in which the liquid contact part is made of a nonmetallic material makes it possible to elute metal into a highly pure chemical solution. It has been found that it is possible to carry out sufficient transportation or circulation while controlling extremely effectively. BRIEF DESCRIPTION OF THE FIGURES

図 1は、 本発明の製造方法を実施するための高純度硫酸の製造装置の一例の概 略構成を示すプロック形式のフロー図である。  FIG. 1 is a block diagram of a block diagram showing a schematic configuration of an example of an apparatus for producing high-purity sulfuric acid for carrying out the production method of the present invention.

図 2は、 本発明の製造方法を実施するための高純度硫酸の製造装置の他の例の 概略構成を示すプロック形式のフロ 図である。  FIG. 2 is a block diagram of a block diagram showing a schematic configuration of another example of a high-purity sulfuric acid production apparatus for carrying out the production method of the present invention.

図 3は、 後述する実施例 1で用いた高純度硫酸の製造装置の概略構成を示すブ 口ック形式のフロー図である。  FIG. 3 is a block diagram flow chart showing a schematic configuration of a high-purity sulfuric acid production apparatus used in Example 1 described later.

図 4は、 本発明の製造方法を実施するための高純度アンモニア水の製造装置の —例の概略構成を示すブロック形式のフロー図である。 発明を実施するための最良の形態 FIG. 4 is a block-type flow diagram showing a schematic configuration of an example of an apparatus for producing high-purity aqueous ammonia for carrying out the production method of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

以下、 必要に応じて図面を参照しつつ、 本発明を詳細に説明する。  Hereinafter, the present invention will be described in detail with reference to the drawings as necessary.

(高純度硫酸の製造方法)  (Production method of high purity sulfuric acid)

図 1は、 本発明の製造方法を実施するための高純度硫酸製造装置の一例を示 すフロー図である。 この図 1において、 各参照符号は、 1 :無水硫酸、 2 :水、 3 :高純度硫酸、 4 :空気、 5 :ベント、 6 :吸収塔、 7 :硫酸、 8 :冷却器、 9 :貯留夕ンク、 10 :ストリッビング塔、 11 :硫酸供給配管、 12 :移送夕 ンク入口弁、 13 : 気体供給配管、 14:気体入口弁、 15 : 気体排出配管、 16 :気体出口弁、 17 :移送タンク、 18 :移送タンク出口弁、 19 :硫酸排 出配管、 をそれぞれ示す。  FIG. 1 is a flow chart showing an example of a high-purity sulfuric acid production apparatus for performing the production method of the present invention. In FIG. 1, reference numerals are: 1: sulfuric anhydride, 2: water, 3: high-purity sulfuric acid, 4: air, 5: vent, 6: absorption tower, 7: sulfuric acid, 8: cooler, 9: storage Evening, 10: stripping tower, 11: sulfuric acid supply pipe, 12: transfer sunset inlet valve, 13: gas supply pipe, 14: gas inlet valve, 15: gas discharge pipe, 16: gas outlet valve, 17: transfer Tank, 18: transfer tank outlet valve, 19: sulfuric acid discharge pipe.

図 1を参照して、 このような態様においては、 不純物として亜硫酸ガスを含有 していてもよい気体状の無水硫酸 (1) と、 水 (2) とから高純度硫酸 (3) を 製造する。 この製造方法は、 下記の工程 (a) 〜 (c) を含む。  Referring to FIG. 1, in such an embodiment, high-purity sulfuric acid (3) is produced from gaseous sulfuric anhydride (1), which may contain sulfurous acid gas as an impurity, and water (2). . This manufacturing method includes the following steps (a) to (c).

(a) 吸収工程:吸収塔 (6) において、 水 (2) と気体状の無水硫酸 (SO 3) (1) とを接触させて、 気体状の無水硫酸を水に吸収させることにより、 不 純物としての亜硫酸ガスを含有していてもよい硫酸 (7) を得る工程; (a) Absorption step: In the absorption tower (6), water (2) is brought into contact with gaseous sulfuric anhydride (SO 3 ) (1) to absorb gaseous sulfuric anhydride into water, thereby reducing Obtaining sulfuric acid (7) which may optionally contain sulfurous acid gas;

(b) 輸送工程:上記した硫酸の少なくとも一部分を、 下記ストリッビングェ 程へ輸送供給する工程であって、 吸収塔から供給される硫酸を、 接液部が非金属 材料である移送タンク (17) 、 移送タンクへの硫酸供給配管 (11) 、 移送夕 ンクからの硫酸排出配管 (19) 、 移送タンクへの気体供給配管 (13) および 移送タンクからの気体排出配管 (1.5) を含む液体圧送システムにより硫酸の輸 送を行う工程;  (b) Transporting step: A step of transporting and supplying at least a portion of the above-mentioned sulfuric acid to the following stripping step, wherein the sulfuric acid supplied from the absorption tower is transferred to a transfer tank (17) in which the liquid contact part is a nonmetallic material. ), Liquid pressure feed including sulfuric acid supply piping to the transfer tank (11), sulfuric acid discharge piping from the transfer tank (19), gas supply piping to the transfer tank (13), and gas discharge piping from the transfer tank (1.5) Transporting sulfuric acid by the system;

(c) ストリッビング工程:ストリッピング塔 ( 10) において、 輸送工程か ら供給される硫酸を空気 (4) でストリツビングして、 硫酸中の亜硫酸ガスを硫 酸から分離除去することにより、 高純度硫酸 (3) を得る工程。  (c) Stripping process: In a stripping tower (10), sulfuric acid supplied from the transportation process is stripped with air (4) to separate and remove sulfurous acid gas in sulfuric acid from sulfuric acid, thereby achieving high purity. A step of obtaining sulfuric acid (3).

(吸収工程) 本発明の吸収工程は、 吸収塔 (6) において、 水 (2) と気体状の無水硫酸(Absorption process) In the absorption step of the present invention, water (2) and gaseous sulfuric anhydride are added in the absorption tower (6).

( 1 ) とを接触させて気体状の無水硫酸を水に吸収させることにより不純物とし ての亜硫酸ガスを含有していてもよい硫酸 (7) を得る工程である。 This is a step of obtaining sulfuric acid (7), which may contain sulfurous acid gas as an impurity, by bringing gaseous sulfuric anhydride into water by contacting with (1).

上記の原料たる気体状の無水硫酸 (S03) は特に制限されないが、 不純物除 去の容易性の点からは、 亜硫酸ガス (S02) の含有量が 100重量 ppm以下 (更には 10重量 ppm以下) 程度であることが好ましい。 このような無水硫酸 としては、 通常市販されているものが使用可能であるが、 該市販の無水硫酸は、 通常、 10〜100重量 ppm程度の亜硫酸ガスを含有している。 The above raw material serving as gaseous sulfur trioxide (S0 3) is not particularly limited, for ease of impurity-removal, the content of sulfur dioxide (S0 2) is less than 100 wt ppm (more 10 ppm by weight The following is preferred. As such sulfuric anhydride, a commercially available sulfuric anhydride can be used, and the commercially available sulfuric anhydride usually contains sulfur dioxide gas at about 10 to 100 ppm by weight.

上記した無水硫酸 (S03) とともに原料として用いられる水 (2) は、 いわ ゆる超純水であることが好ましい。 本発明において好適に使用可能な超純水は、 比抵抗が 18 ΜΩ · cm以上、 微粒子数が 10個/ ml以下、 塩素濃度 Ορρπκ パクテリア数が 10コロニー/ ml以下のものである。 このような純水の詳細に ついては、 例えば、 伴保隆 「シリコン LS Iと化学」 第 101頁 (1993年) 大日本図書を参照することができる。 Water (2) used as a raw material with sulfuric anhydride (S0 3) described above is preferably-called ultra-pure water. Ultrapure water that can be suitably used in the present invention has a specific resistance of 18 18Ω · cm or more, a number of fine particles of 10 / ml or less, and a chlorine concentration Ορρπκ of 10 colonies / ml or less. For details of such pure water, reference can be made, for example, to Takashi Banbo, “Silicon LSI and Chemistry,” p. 101 (1993), Dainippon Tosho.

上記した無水硫酸と水とを接触させる吸収塔 (6) としては、 充填塔など、 通 常のものを使用することができる。 該吸収塔には、 ラシヒリング等の充填物が充 填されていることが好ましい。  As the absorption tower (6) for bringing sulfuric anhydride and water into contact with each other, a conventional one such as a packed tower can be used. The absorption tower is preferably filled with packing such as Raschig rings.

本吸収工程としては、 たとえば吸収塔 (充填塔) の下部から気体状の無水硫酸 を供給し、 該吸収塔の上部から超純水を供給し、 これらの両者を吸収塔内で接触 させればよい。 ここで、 亜硫酸ガスを除去する目的で、 吸収塔の下部から空気を 供給してもよい。 なお、 本工程の吸収塔には、 後述する輸送工程からリサイクル される硫酸をも供給して、 上記超純水と合一させた後に、 気体状の無水硫酸と接 触させてもよい。  In this absorption step, for example, gaseous sulfuric anhydride is supplied from the lower part of the absorption tower (packed tower), ultrapure water is supplied from the upper part of the absorption tower, and both are brought into contact in the absorption tower. Good. Here, air may be supplied from the lower part of the absorption tower for the purpose of removing sulfurous acid gas. The absorption tower in this step may also be supplied with sulfuric acid recycled from a transportation step described later, and combined with the ultrapure water, and then contacted with gaseous sulfuric anhydride.

(輸送工程)'  (Transportation process) '

本発明の輸送工程は、 上記の吸収工程により得られた硫酸の少なくとも一部分 を、 下記ストリツビング工程へ輸送 ·供給する工程である。 この輸送工程におい ては、 吸収塔から供給される硫酸を、 接液部が非金属材料である移送タンク (1 7) 、 移送タンクへの硫酸供給配管 (11) 、 移送タンクからの硫酸排出配管 (19)、 移送タンクへの気体供給配管 (13) および移送タンクからの気体排 出配管 (15) を含む液体圧送システムにより硫酸の輸送を行うことが好ましい。 (液体圧送システム) The transporting step of the present invention is a step of transporting and supplying at least a part of the sulfuric acid obtained in the absorption step to the following stripping step. In this transportation process The transfer of sulfuric acid supplied from the absorption tower to the transfer tank (17), the sulfuric acid supply pipe to the transfer tank (11), the sulfuric acid discharge pipe from the transfer tank (19), It is preferable that sulfuric acid be transported by a liquid pumping system including a gas supply pipe (13) to the transfer tank and a gas discharge pipe (15) from the transfer tank. (Liquid pumping system)

本発明における液体圧送システムにおいて、 液体の圧力による移送は、 基本的 にはビストンフローと同様のメカニズムによる。 すなわち、 気体によって、 液体 をタンク内から押し出している。  In the liquid pumping system according to the present invention, the transfer by the pressure of the liquid is basically performed by the same mechanism as that of the biston flow. That is, the gas pushes the liquid out of the tank.

より具体的には、 本発明における圧送の原理は、 ベルヌ一ィの定理 (該定理の 詳細については、 例えば、 岡田功著 「化学工学」 第 54〜 59頁 (1987年) 東京電機大学出版局、 を参照することができる。 ) に基づくものであり、 気体の 圧力エネルギー (p) が、 液体の位置エネルギー (Z) および摩擦損失 (f ) の 合計を上回ると、 該液体が移動 (運動) を開始する。  More specifically, the principle of pumping in the present invention is based on Bernoulli's theorem (for details of the theorem, see, for example, Isao Okada, “Chemical Engineering”, pp. 54-59 (1987) Tokyo Denki University Press) When the pressure energy (p) of the gas exceeds the sum of the potential energy (Z) and the friction loss (f) of the liquid, the liquid moves (motion). To start.

静止状態: P。 (圧力) =Z (位置エネルギー) +f (摩擦損失)  Stationary state: P. (Pressure) = Z (potential energy) + f (friction loss)

移動状態: (圧力) =Z (位置エネルギー) +f (摩擦損失) +V (運動)  Moving state: (pressure) = Z (potential energy) + f (friction loss) + V (motion)

(ただし、 P1>P0) (However, P 1 > P 0 )

本発明に好適に使用可能な液体圧送システムは、 接液部が非金属材料である移 送タンク (17) 、 移送タンクへの硫酸供給配管 (1 1) 、 移送タンクからの硫 酸排出配管 ( 19) 、 移送タンクへの気体供給配管 (13) および移送タンクか らの気体排出配管 (15) を含むシステムである。 移送タンクの接液部をなす非 金属材料としては、 ポリテトラフルォロエチレン (テフロン) 等のフッ素樹脂 (例えば、 テトラフルォロエチレン一ペルフルォロビニルエーテル共重合体 (P FA) 、 ポリテトラフルォロエチレン (PTFE)等) が好適に使用可能である。 液体圧送システムに用いられる気体としては、 清浄気体である限り特に制限さ れないが、 空気、 窒素等の清浄気体が好ましい。 ここに、 「清浄気体」 とは、 微 粒子が除去された気体をいう。 圧送システムにおける気体は、 安全上の点からは、 0. 05〜0. 2 111フィルターでろ過した気体であることが好ましく、 該気体 の圧力は、 1. 0〜2. 0 kg/ cm2 G (G:ゲージ圧力;大気圧を差し引い た値であり、 0kg/cm2G=lkg/cm2)程度であることが好ましい。 貯留タンク (9) の上流に設置された冷却器出口の硫酸の温度は、 ストリッピ ングの観点からは 60〜180°Cとすることが好ましい。 該温度が 60。C未満で は硫酸中の亜硫酸ガスをストリツビングする効果が不充分になる可能性がある。 一方該温度が 18 CTCを超えると、 硫酸中への金属の溶出が促進される可能性が あ o The liquid pressure feeding system that can be suitably used in the present invention includes: a transfer tank (17) whose liquid contact portion is made of a non-metallic material; a sulfuric acid supply pipe (11) to the transfer tank; This system includes a gas supply pipe to the transfer tank (13) and a gas discharge pipe from the transfer tank (15). Non-metallic materials that make up the liquid contacting part of the transfer tank include fluoroplastics such as polytetrafluoroethylene (Teflon) (for example, tetrafluoroethylene-perfluorovinyl ether copolymer (PFA), Tetrafluoroethylene (PTFE) or the like can be suitably used. The gas used in the liquid pumping system is not particularly limited as long as it is a clean gas, but a clean gas such as air or nitrogen is preferable. Here, "clean gas" refers to a gas from which fine particles have been removed. The gas in the pumping system is, from a safety point of view, It is preferably a gas filtered through a 0.05 to 0.2111 filter, and the pressure of the gas is 1.0 to 2.0 kg / cm 2 G (G: gauge pressure; a value obtained by subtracting the atmospheric pressure. Yes, it is preferable to be about 0 kg / cm 2 G = lkg / cm 2 ). The temperature of the sulfuric acid at the outlet of the cooler installed upstream of the storage tank (9) is preferably 60 to 180 ° C from the viewpoint of stripping. The temperature is 60. If it is less than C, the effect of stripping sulfurous acid gas in sulfuric acid may be insufficient. On the other hand, if the temperature exceeds 18 CTC, elution of metal into sulfuric acid may be accelerated.

本発明においては、 上記した液体圧送システムは以下のような方法で使用する In the present invention, the above-described liquid pumping system is used in the following method.

'ことが好ましい。 すなわち、 貯留タンク (9) の硫酸を、 重力により硫酸供給配 管 ( 11) を通って移送タンク (17) へ供給する。 このとき、 移送タンク出口 # (18) は閉止しておき、 硫酸を移送タンクに貯留させる。 次に、 移送タンク 入口弁 (12) を閉止し、 移送タンク出口弁 (18) を開放し、 移送タンクへの 気体供給配管 (13) から気体を移送タンクへ供給することにより、 移送タンク 内の硫酸を、 該移送タンクから外へ圧送する。 このとき、 気体出口弁 (16) は 閉止しておく。 移送タンク内の硫酸の送出が終了すれば、 気体入口弁 (14) を 閉止し、 気体出口弁 (16) を開放し、 再度貯留タンク (9) の硫酸を移送タン ク (17) へ供給するサイクルに入る。 このようにして、 液体圧送システムによ る硫酸の輸送が行われる。 'Is preferred. That is, the sulfuric acid in the storage tank (9) is supplied by gravity to the transfer tank (17) through the sulfuric acid supply pipe (11). At this time, transfer tank outlet # (18) is closed and sulfuric acid is stored in the transfer tank. Next, the transfer tank inlet valve (12) is closed, the transfer tank outlet valve (18) is opened, and gas is supplied to the transfer tank from the gas supply pipe (13) to the transfer tank. Sulfuric acid is pumped out of the transfer tank. At this time, keep the gas outlet valve (16) closed. When the transfer of sulfuric acid in the transfer tank is completed, close the gas inlet valve (14), open the gas outlet valve (16), and supply the sulfuric acid in the storage tank (9) to the transfer tank (17) again. Enter the cycle. In this way, sulfuric acid is transported by the liquid pumping system.

上記した液体圧送システムは、 図 1に示すように、 硫酸の流れに対して並列に 配置した二基以上を設置することが好ましい。 このように液体圧送システムを並 列に設置した態様では、 該液体圧送システム一基毎の時間サイクルをずらせて運 転することにより、 より連続的な硫酸の輸送ないし循環が可能となる。 上記した 液体圧送システムの上記作動 (弁の開閉の順次のコントロール等) は、 公知の自 動制御システムを用いることにより、 自動的に行うことも可能である。  As shown in FIG. 1, it is preferable that two or more of the above-mentioned liquid pumping systems are arranged in parallel with the flow of sulfuric acid. In the aspect in which the liquid pumping systems are installed in parallel in this way, by shifting the time cycle of each liquid pumping system and operating, a more continuous transport or circulation of sulfuric acid becomes possible. The above operation (such as sequential control of opening and closing of the valve) of the liquid pressure feeding system described above can be automatically performed by using a known automatic control system.

図 1に示した態様では、 本工程において硫酸の少なくとも一部分がストリツビ ング工程へ供給され、 硫酸の残部分は吸収工程へリサイクルされる。 In the embodiment shown in FIG. 1, at least a part of the sulfuric acid is striped in this step. The remaining sulfuric acid is recycled to the absorption process.

(ストリッビング工程)  (Striping process)

本発明のストリヅビング工程は、 ストリツビング塔 (10) において、 輸送ェ 程から (液体圧送システムの作動により) 供給される硫酸を、 空気 (4) でスト リツビンングして該硫酸中に含まれる可能性のある亜硫酸ガスを硫酸から分離除 去することにより、 高純度硫酸 (3) を得る工程である。  In the stripping step of the present invention, in the stripping tower (10), sulfuric acid supplied from the transportation step (by operating the liquid pumping system) may be stripped with air (4) to remove the sulfuric acid. In this step, high-purity sulfuric acid (3) is obtained by separating and removing certain sulfurous acid gas from sulfuric acid.

ストリッビング塔としては、 前記吸収工程において説明した吸収塔と同様のも のを用いることができる。 本工程においては、 たとえばストリツビング塔の上部 からストリッビングすべき硫酸を供給し、 ストリッビング塔の下部から空気を供 給し、 両者をストリッビング塔内で接触させる方法を採用することが可能である。 (他の態様)  As the stripping tower, the same one as the absorption tower described in the absorption step can be used. In this step, for example, it is possible to adopt a method in which sulfuric acid to be stripped is supplied from the upper part of the stripping tower, air is supplied from the lower part of the stripping tower, and both are brought into contact in the stripping tower. . (Other aspects)

本発明においては、 上記した図 1の態様の変形として、 ストリツビング工程お よび輸送工程を、 図 2に示すような下記の通りのものとしてもよい。  In the present invention, as a modification of the above-described embodiment of FIG. 1, the stripping step and the transporting step may be as follows as shown in FIG.

ストリッビング工程:ストリッピング塔 (10) において、 吸収工程から供給 される硫酸 ( 7) を、 空気 (4) でストリヅビンングして、 硫酸中に含有される 可能性のある亜硫酸ガスを硫酸から分離除去することにより、 高純度硫酸 (3) を得る工程;  Stripping process: In a stripping tower (10), sulfuric acid (7) supplied from the absorption process is stripped with air (4) to separate and remove sulfurous acid gas that may be contained in sulfuric acid from sulfuric acid. Obtaining high-purity sulfuric acid (3);

輸送工程:上記ストリッビング工程から供給される硫酸の少なくとも一部分を 製品硫酸として分岐採取する工程であって、 吸収塔から供給される硫酸を (冷却 器 (8) により冷却した後) 、 貯留タンク (9) に貯留し、 更に該貯留タンクの 硫酸を、 接液部が非金属材料である移送タンク (17) 、 移送タンクへの硫酸供 給配管 (11) 、 移送タンクからの硫酸排出配管 (19) 、 移送タンクへの気体 供給配管 (13) および移送タンクからの気体排出配管 (15) を含む液体圧送 システムにより、 硫酸の輸送を行う工程。  Transporting step: A step of branching and collecting at least a part of the sulfuric acid supplied from the above-mentioned stripping step as product sulfuric acid. The sulfuric acid supplied from the absorption tower is cooled (after being cooled by the cooler (8)) and stored in the storage tank ( 9), the sulfuric acid in the storage tank is further transferred to the transfer tank (17), the sulfuric acid supply pipe to the transfer tank (11), and the sulfuric acid discharge pipe from the transfer tank (19). ), The process of transporting sulfuric acid by a liquid pressure feeding system including a gas supply pipe (13) to the transfer tank and a gas discharge pipe (15) from the transfer tank.

上記した以外の図 2の構成は、 図 1において説明したものと同様である。  The configuration in FIG. 2 other than the above is the same as that described in FIG.

(高純度硫酸) 上記した本発明の製造方法により得られる高純度硫酸は、 金属分濃度 10重量 ppt以下、 亜硫酸ガス濃度 1重量 ppm以下とすることができる。 このような 高純度硫酸は、 半導体製造プロセスにおいて、 シリコンウェハ等の洗浄液として 最適に使用することが可能である。 (High purity sulfuric acid) The high-purity sulfuric acid obtained by the above-described production method of the present invention can have a metal content of 10 wt% or less and a sulfurous acid gas concentration of 1 wtppm or less. Such high-purity sulfuric acid can be optimally used as a cleaning solution for silicon wafers and the like in a semiconductor manufacturing process.

(高純度アンモニア水の製造方法)  (Production method of high-purity ammonia water)

図 4は、 本発明の製造方法を実施するための高純度アンモニア水製造装置の —例を示すフロー図である。 この図 4において、 各参照符号は、 21 :アンモニ ァガス、 22 :水、 23 :アンモニア水、 24 :吸収装置、 25 :冷却器、 26 FIG. 4 is a flowchart showing an example of a high-purity ammonia water producing apparatus for carrying out the producing method of the present invention. In FIG. 4, reference numerals 21: ammonia gas, 22: water, 23: ammonia water, 24: absorber, 25: cooler, 26

:移送タンク、 27 :アンモニア水供給配管、 28 :アンモニア水排出配管、 2 9 :気体供給配管、 30 :気体排出配管、' 31 :移送タンク入口弁、 32 :移送 タンク出口弁、 33 :気体入口弁、 34 :気体出口弁、 をそれそれ示す。 : Transfer tank, 27: ammonia water supply pipe, 28: ammonia water discharge pipe, 29: gas supply pipe, 30: gas discharge pipe, '31: transfer tank inlet valve, 32: transfer tank outlet valve, 33: gas inlet Valve, 34: gas outlet valve.

図 4を参照して、 このような態様においては、 アンモニアガス (21) を水 Referring to FIG. 4, in such an embodiment, ammonia gas (21) is

(22) に吸収させて高純度アンモニア水 (23) を製造する。 この製造方法は、 下記の工程 (A) 〜 (B) を含む。 (22) to produce high-purity aqueous ammonia (23). This manufacturing method includes the following steps (A) and (B).

(A) 吸収工程:吸収装置 (24) において、 アンモニアガスを水に吸収させ ることによりアンモニア水を生成させる工程;  (A) absorption step: in the absorption device (24), a step of generating ammonia water by absorbing ammonia gas into water;

(B)循環工程:上記の吸収工程で得られたアンモニア水を冷却器 (25) に 導いて冷却した後、 再度吸収工程へ循環させる工程であって、 接液部が非金属材 料である移送タンク (26) 、 移送タンクへのアンモニア水供給配管 (27) 、 移送タンクからのアンモニア水排出配管 (28) 、 移送タンクへの気体供給配管 (B) Circulation step: a step in which the ammonia water obtained in the above-mentioned absorption step is led to a cooler (25) to be cooled, and then circulated again to the absorption step, and the liquid contact part is a non-metallic material Transfer tank (26), Ammonia water supply pipe to transfer tank (27), Ammonia water discharge pipe from transfer tank (28), Gas supply pipe to transfer tank

(29) および移送タンクからの気体排出配管 (30) を含む液体圧送システム により、 アンモニア水の循環を行う工程。 A process of circulating ammonia water by a liquid pumping system including (29) and a gas discharge pipe (30) from the transfer tank.

(アンモニアガス)  (Ammonia gas)

原料であるアンモニアガスは、 水に吸収させる前に、 高精度フィル夕一 (孔径 : 0. 05/ m以下) を用いて、 ガス中の微少不純物を除去することが好ましい。 他方の原料である水としては、 上述したような超純水 (比抵抗が 18ΜΩ · cm 以上) が好ましく用いられる。 It is preferable to remove minute impurities in the ammonia gas as a raw material using a high-precision filter (pore size: 0.05 / m or less) before absorbing it into water. The other raw material water is ultrapure water as described above (specific resistance is 18ΜΩ · cm Above) are preferably used.

(吸収工程)  (Absorption process)

吸収工程は、 吸収装置においてアンモニアガスを水に吸収させることにより、 アンモニア水を得る工程である。 該吸収装置としては、 吸収塔および吸収槽のい ずれも使用可能である。 ここで吸収塔とは、 充填物を充填した塔形式の吸収装置 であり、 吸収槽とは、 低部にアンモニアガスの吹き出し部分を有する槽形式の吸 収装置である。 吸収工程は、 アンモニア水の製造において通常使用されている公 知の工程を用いることができる。  The absorption step is a step of obtaining ammonia water by absorbing ammonia gas into water in an absorption device. As the absorber, any of an absorption tower and an absorption tank can be used. Here, the absorption tower is a tower-type absorption device filled with packing material, and the absorption tank is a tank-type absorption device having a blow-out portion of ammonia gas in a lower part. As the absorption step, a known step generally used in the production of aqueous ammonia can be used.

上記吸収工程においては、 アンモニアガスが水に吸収されてアンモニア水が生 成する。 この際、 アンモニアガスの吸収に伴って相当量の吸収熱が発生し、 アン モニァ水の温度が上昇する。 したがって、 アンモニア水の濃度を高めるためには、 アンモニア水を冷却しつつアンモニア水を吸収工程へ再度循環させる循環工程を 設けることが好ましい。  In the above absorption step, the ammonia gas is absorbed by water to produce ammonia water. At this time, a considerable amount of heat of absorption is generated due to the absorption of the ammonia gas, and the temperature of the ammonia water rises. Therefore, in order to increase the concentration of the aqueous ammonia, it is preferable to provide a circulation step of recirculating the aqueous ammonia to the absorption step while cooling the aqueous ammonia.

(循環工程)  (Circulation process)

本発明の循環工程においては、 吸収工程で得られたアンモニア水を冷却器 (2 5 ) に導いて冷却した後、 再度吸収工程へ循環させる工程であって、 接液部が非 金属材料である移送タンク (2 6 ) 、 移送タンクへのアンモニア水供給配管 ( 2 7 ) 、 移送タンクからのアンモニア水排出配管 (2 8 ) 、 移送タンクへの気体供 給配管 (2 9 ) および移送タンクからの気体排出配管 (3 0 ) を含む液体圧送シ ステムにより、 アンモニア水の循環を行う工程である。  In the circulation step of the present invention, the ammonia water obtained in the absorption step is guided to a cooler (25) to be cooled, and then circulated again to the absorption step, wherein the liquid contact part is a nonmetallic material Transfer tank (26), ammonia water supply pipe to transfer tank (27), ammonia water discharge pipe from transfer tank (28), gas supply pipe to transfer tank (29) and transfer tank In this step, the ammonia water is circulated by the liquid pumping system including the gas discharge pipe (30).

上記の冷却器としては、 公知の熱交換器等からなる冷却器を特に制限なく使用 することが可能である。  As the above-described cooler, a cooler including a known heat exchanger or the like can be used without particular limitation.

(液体圧送システム)  (Liquid pumping system)

図 4の態様における液体圧送システムは、 接液部が非金属材料である移送タン ク (2 6 ) 、 移送タンクへのアンモニア水供給配管 (2 7 ) 、 移送タンクからの アンモニア水排出配管 (2 8 ) 、 移送タンクへの気体供給配管 (2 9 ) および移 · 送タンクからの気体排出配管 (30) を含むシステムである。 移送タンクの接液 部をなす非金属材料としては、 上記した硫酸製造の場合と同様に、 ポリテトラフ ルォロエチレン (テフロン) などのフッ素樹脂を例示することができる。 The liquid pumping system in the embodiment of FIG. 4 includes a transfer tank (26) in which the liquid contact portion is made of a non-metallic material, an ammonia water supply pipe (27) to the transfer tank, and an ammonia water discharge pipe (2) from the transfer tank. 8), gas supply piping to the transfer tank (29) and transfer · This system includes a gas discharge pipe (30) from the feed tank. As the nonmetallic material forming the liquid contact part of the transfer tank, a fluorine resin such as polytetrafluoroethylene (Teflon) can be exemplified as in the case of the above-mentioned sulfuric acid production.

液体圧送システムに用いられる気体としては、 上記した硫酸製造の場合と同様 に、 空気、 窒素などの清浄気体が好ましい。 気体の圧力は 1. 0〜1. 9kgZ cm2程度であることが好ましい。 As the gas used in the liquid pumping system, a clean gas such as air or nitrogen is preferable as in the case of the above-mentioned sulfuric acid production. The pressure of the gas is preferably about 1.0 to 1.9 kgZcm 2 .

上記の液体圧送システムの好ましい使用方法は、 次のとおりである。  A preferred method of using the above liquid pumping system is as follows.

すなわち、 吸収装置 (24) で生成したアンモニア水を、 重力によりアンモニ ァ水供給配管 (27) を通って移送タンク (26) へ供給する。 この際、 移送夕 ンク出口弁 (32) は閉止されており、 アンモニア水は移送タンクに貯留される。 次に、 移送タンク入口弁 (31) を閉止し、 移送タンク出口弁 (32) を開放し、 移送タンクへの気体供給配管 (29) から気体を移送タンクへ供給することによ り、 移送タンク内のアンモニア水を移送タンクから外へ圧送する。 この際、 気体 出口弁 (34) は閉止しておく。 移送タンク内のアンモニア水の送出が終了すれ ば、 気体入口弁 (33) を閉止し、 気体出口弁 (34) を開放し、 再度吸収装置 (24) のアンモニア水を移送タンク (26) へ供給するサイクルに入る。 この ようにして、 アンモニア水の循環が行われる。  That is, the ammonia water generated by the absorption device (24) is supplied to the transfer tank (26) by gravity through the ammonia water supply pipe (27). At this time, the transfer tank outlet valve (32) is closed and ammonia water is stored in the transfer tank. Next, the transfer tank inlet valve (31) is closed, the transfer tank outlet valve (32) is opened, and gas is supplied to the transfer tank from the gas supply pipe (29) to the transfer tank. The ammonia water inside is pumped out from the transfer tank. At this time, keep the gas outlet valve (34) closed. When the transfer of the ammonia water in the transfer tank is completed, close the gas inlet valve (33), open the gas outlet valve (34), and supply the ammonia water in the absorber (24) to the transfer tank (26) again. Enter the cycle to do. In this way, circulation of the ammonia water is performed.

上記の液体圧送システムは、 図 4に示すように、 アンモニア水の流れに対して 並列に配置した二基以上を設置することが好ましい。 このような態様では、 液体 圧送システム、 一基毎の時間サイクルをずらせて運転することにより、 より連続 的なアンモニア水の循環が可能となる。  As shown in FIG. 4, it is preferable that two or more of the above-mentioned liquid pumping systems are arranged in parallel with the flow of ammonia water. In such an embodiment, a more continuous circulation of the ammonia water is made possible by operating the liquid pumping system and the time cycle of each unit at a different time.

液体圧送システムの上記作動は、 公知の自動制御システムを用いることにより、 自動的に行うこともできる。 ―  The above operation of the liquid pumping system can be automatically performed by using a known automatic control system. ―

<実施例〉 ' <Example> ''

以下、 実施例により本発明を更に具体的に説明する。  Hereinafter, the present invention will be described more specifically with reference to examples.

実施例 1 図 3を参照して、 テフロン製タンク (容量: 200 L) 中に、 89重量%硫酸 200 kgを注入した。 この硫酸は、 超純水 (比抵抗: 18ΜΩ · cm以上) に、 気体状の無水硫酸 (S03) を吸収させることにより製造されたものであり、 不 純物として S02 (亜硫酸ガス) を l Oppm含有し、 且つ、 後述する表 1に示 すよう金属分の不純物を含有していた。 Example 1 Referring to FIG. 3, 200 kg of 89% by weight sulfuric acid was injected into a Teflon tank (capacity: 200 L). The sulfuric acid, ultrapure water: to (resistivity 18ΜΩ · cm or more), which has been prepared by absorbing gaseous sulfur trioxide (S0 3), as non neat S0 2 (the sulfur dioxide) l Oppm and metal impurities as shown in Table 1 below.

上記の不純物分析は、 I CP— MS法により行った。 より具体的には、 分ネ斤対 象たるサンブル液をネブラィザにより微細ミスト状にした後、 誘導結合ブラズマ (I CP) を用いて該サンプル液中の金属元素をイオン化して、 該イオン化した 元素を上記質量分析器により質量別に分別して、 サンプル液中の金属元素の種類 および量を求めた。  The above impurity analysis was performed by the ICP-MS method. More specifically, after the sample solution to be treated is divided into fine mist by a nebulizer, a metal element in the sample solution is ionized using an inductively coupled plasma (ICP), and the ionized element is ionized. Was separated by mass using the mass spectrometer described above, and the types and amounts of metal elements in the sample solution were determined.

上記のタンク 9内の硫酸を、 図 3の液体圧送システムを用いて、 液温 80。C、 平均流量 8 L/hrで 24時間液循環を行なった。  The sulfuric acid in the tank 9 was heated to a liquid temperature of 80 using the liquid pumping system shown in FIG. C, liquid circulation was performed at an average flow rate of 8 L / hr for 24 hours.

ここで用いた液体圧送システムは、 接液部が非金属材料であるテフロンからな る貯留タンク 9 (容量 20 L) 、 移送タンク 17への硫酸供給配管 11、 移送夕 ンク 17からの硫酸排出配管 19、 移送タンク 17への気体供給配管 13、 およ び移送タンクからの気体排出配管 15からなるシステムである。 液体圧送システ ムの構成要素はステンレス製であつたが、 それらの接液部は、 全てテフロン - ラ イニング (厚さ :約 3 mm) によりコ一ティングされていた。 液体圧送システム の気体としては、 圧力 2. 0 kg/cm2 Gの清浄空気を用いた。 The liquid pumping system used here consists of a storage tank 9 (capacity: 20 L) made of Teflon, the liquid contact part of which is a non-metallic material, a sulfuric acid supply pipe 11 to the transfer tank 17, and a sulfuric acid discharge pipe from the transfer tank 17. 19, a gas supply pipe 13 to the transfer tank 17, and a gas discharge pipe 15 from the transfer tank. The components of the liquid pumping system were made of stainless steel, but their wetted parts were all coated with Teflon-lining (thickness: about 3 mm). Clean air with a pressure of 2.0 kg / cm 2 G was used as the gas for the liquid pumping system.

上記により得られた高純度硫酸について、 循環前と同様の金属分の分析を行つ た。 得られた結果を、 下記表 1に示す。  For the high-purity sulfuric acid obtained as described above, the same metal content analysis as before the circulation was performed. The results obtained are shown in Table 1 below.

比較例 1 Comparative Example 1

実施例 1で用いた液体圧送システム (図 3) に代えて、 市販のテフロン製遠心 ポンプを用い、 平均流量 8 L/h rとした以外は、 実施 ί列 1と同様に 89重量% 硫酸 200 k gの 24時間液循環を行なった。 得られた結果を、 下記表 1に併せ て示す。 7/00227 1629 200 kg of 89% by weight sulfuric acid as in Example 1 except that a commercially available Teflon centrifugal pump was used instead of the liquid pumping system used in Example 1 (Figure 3) and the average flow rate was 8 L / hr. For 24 hours. The results obtained are shown in Table 1 below. 7/00227 1629

<表 1〉 循環前 <Table 1> Before circulation

硫酸中の金属分 (pp t ) <実施例 1〉 <比較例 1> アルミニウム 10 12 1100  Metal content in sulfuric acid (ppt) <Example 1> <Comparative example 1> Aluminum 10 12 1100

2 3 1200  2 3 1200

マグネシウム 5 5 112  Magnesium 5 5 112

14 15 2175  14 15 2175

実施例 2 Example 2

図 4に示す装置を用いて、 高純度アンモニア水の製造を行った。 吸収装置 (2 4) としては内容量 1 Om3の吸収槽を用い、 移送タンク (26) としては内容 量 0. 02m3の槽を用い、 液体圧送システムの気体としては、 圧力 1. 9kg /cm2の清浄空気を用いた。 Using the apparatus shown in Fig. 4, high-purity ammonia water was produced. An absorption tank with a capacity of 1 Om 3 is used as the absorption device (24), a tank with a content of 0.02 m 3 is used as the transfer tank (26), and a pressure of 1.9 kg / cm 2 of clean air was used.

吸収槽に 1 Om3の超純水 (比抵抗: 18ΜΩ · cm以上) を仕込み、 該吸収 槽にアンモニアガスを 30 k g/h rで供給して、 アンモニア水を生成させた。 このようにして生成させたアンモニア水について、 上記した条件下、 液温 25 °C、 平均流量 200 L/mi nで 24時間の循環運転を行い、 29重量%の高純 度アンモニア水を得た。 1 Om 3 ultrapure water (specific resistance: 18ΜΩ · cm or more) was charged into the absorption tank, and ammonia gas was supplied to the absorption tank at a rate of 30 kg / hr to generate ammonia water. The ammonia water thus produced was circulated for 24 hours at a liquid temperature of 25 ° C. and an average flow rate of 200 L / min under the conditions described above to obtain 29% by weight of high-purity ammonia water. .

該アンモニア水中の金厲分を実施例 1と同様の I CP— MS法により測定した ところ、 鉄 5重量 ppt、 アルミニウム 2重澄 pp t、 およびカルシウム 1重量 pp tとの 定値が得られた。  The content of gold in the aqueous ammonia was measured by the same ICP-MS method as in Example 1. As a result, constant values of 5 wt% of iron, 5 wt% of aluminum, and 1 wt% of calcium were obtained.

比較例 2 Comparative Example 2

実施例 2で用いた液体圧送システムに代えて、 市販の遠心ポンプを用いた以外 は、 実施例 2と同様にしてアンモニア水を製造した。 Except that a commercially available centrifugal pump was used instead of the liquid pumping system used in Example 2. Produced ammonia water in the same manner as in Example 2.

このようにして得られたアンモニア水中の金属分は、 鉄 1 3重量 p p t、 アル ミニゥム 3重量 p p t、 およびカルシウム 5重量 p p であった。 産業上の利用可能性  The metal content in the ammonia water thus obtained was 13 weight parts per weight of iron, 3 weight parts per million of aluminum, and 5 weight parts per billion of calcium. Industrial applicability

上述したように本発明によれば、 水と、 不純物として亜硫酸ガスを含有してい てもよい気体状の無水硫酸とを接触させて、 該無水硫酸を水に吸収させて硫酸を 生成させる吸収工程と ;  As described above, according to the present invention, an absorption step in which water is brought into contact with gaseous sulfuric anhydride which may contain a sulfurous acid gas as an impurity, and the sulfuric anhydride is absorbed in water to generate sulfuric acid. When ;

前記硫酸を空気でストリッビングして、 該硫酸中の亜硫酸ガスを分離除去する ストリツビング工程と ;  Stripping the sulfuric acid with air to separate and remove the sulfurous acid gas in the sulfuric acid;

前記硫酸の少なくとも一部分を、 接液部が非金属材料からなる液体圧送システ ムにより輸送する輸送工程とを含み;  Transporting at least a portion of the sulfuric acid by a liquid pumping system in which a liquid contact part is made of a nonmetallic material;

且つ、 前記液体圧送システムが、 前記硫酸を貯留するための貯留タンクと、 前 記硫酸を移送するための移送タンクと、 該移送タンクへ硫酸を供給するための供 給配管と、 前記移送タンクから硫酸を排出するための排出配管と、 前記移送タン クへ気体を供給するための気体供給配管と、 前記移送夕ンクから気体を排出する ための気体排出配管とからなる高純度硫酸の製造方法が提供される。  And a liquid storage system for storing the sulfuric acid, a transfer tank for transferring the sulfuric acid, a supply pipe for supplying sulfuric acid to the transfer tank, and the transfer tank. A method for producing high-purity sulfuric acid, comprising: a discharge pipe for discharging sulfuric acid; a gas supply pipe for supplying gas to the transfer tank; and a gas discharge pipe for discharging gas from the transfer tank. Provided.

本発明によれば、 更に、 アンモニアガスを水に吸収させることによりアンモニ ァ水を生成させる吸収工程と ;  According to the present invention, further, an absorption step of generating ammonia water by absorbing ammonia gas into water;

前記吸収工程で生成したアンモニア水を冷却した後、 再度吸収工程へ循環させ る工程であって、 該循環を、 接液部が非金属材料からなる液体圧送システムによ り行う工程とを含み;  Cooling the ammonia water generated in the absorption step and then circulating the ammonia water to the absorption step again, the method including a step of performing the circulation by a liquid pumping system in which a liquid contact part is made of a nonmetallic material;

且つ、 前記液体圧送システムが、 前記アンモニア水を移送するための移送タン クと、 該移送タンクへアンモニア水を供給するための供給配管と、 前記移送タン クからアンモニア水を排出するための排出配管と、 前記移送タンクへ気体を供給 するための気体供給配管と、 前記移送夕ンクから気体を排出するための気体排出 配管とからなることを特徴とする高純度アンモニア水の製造方法が提供される。 上記した本発明の製造方法によれば、 不純物たる金属分および亜硫酸ガスが高 度に除去された高純度の硫酸、 ないしは不純物たる金属分が高度に除去された高 純度のアンモニア水であって、 半導体の製造プロセスに最適に使用し得る硫酸な いし高純度のアンモニア水を製造することができる。 And a transfer tank for transferring the ammonia water, a supply pipe for supplying the ammonia water to the transfer tank, and a discharge pipe for discharging the ammonia water from the transfer tank. A gas supply pipe for supplying gas to the transfer tank; and a gas discharge for discharging gas from the transfer tank. The present invention provides a method for producing high-purity aqueous ammonia, comprising a pipe. According to the above-described production method of the present invention, it is a high-purity sulfuric acid from which a metal component as an impurity and a sulfurous acid gas have been highly removed, or a high-purity ammonia water from which a metal component as an impurity has been highly removed, Sulfuric acid or high-purity ammonia water that can be optimally used in a semiconductor manufacturing process can be manufactured.

Claims

»3 ή »3 ή 1 . 水と、 不純物として亜硫酸ガスを含有していてもよい気体状の無水硫酸とを 接触させて、 該無水硫酸を水に吸収させて硫酸を生成させる吸収工程と ; 前記硫酸を空気でストリッビングして、 該硫酸中の亜硫酸ガスを分離除去する ストリツビング工程と ; 1. contacting water with gaseous sulfuric anhydride which may contain sulfurous acid gas as an impurity, and absorbing the sulfuric anhydride into water to form sulfuric acid; and stripping the sulfuric acid with air. Stripping to separate and remove sulfurous acid gas in the sulfuric acid; 前記硫酸の少なくとも一部分を、 接液部が非金属材料からなる液体圧送システ ムにより輸送する輸送工程とを含み;  Transporting at least a portion of the sulfuric acid by a liquid pumping system in which a liquid contact part is made of a nonmetallic material; 且つ、 前記液体圧送システムが、 前記硫酸を貯留するための貯留タンクと、 前 記硫酸を移送するための移送タンクと、 該移送タンクへ硫酸を供給するための供 給配管と、 前記移送タンクから硫酸を排出するための排出配管と、 前記移送タン クへ気体を供給するための気体供給配管と、 前記移送タンクから気体を排出する ための気体排出配管とからなることを特徴とする高純度硫酸の製造方法。  And a liquid storage system for storing the sulfuric acid, a transfer tank for transferring the sulfuric acid, a supply pipe for supplying sulfuric acid to the transfer tank, and the transfer tank. High-purity sulfuric acid, comprising: a discharge pipe for discharging sulfuric acid; a gas supply pipe for supplying gas to the transfer tank; and a gas discharge pipe for discharging gas from the transfer tank. Manufacturing method. 2 . 前記吸収工程、 輸送工程、 およびストリツビング工程をこの順で行い;且つ、 該輸送工程において、 吸収工程で生成した硫酸の少なくとも一部分をストリツビ ング工程へ供給する請求項 1記載の製造方法。  2. The production method according to claim 1, wherein the absorption step, the transportation step, and the stripping step are performed in this order; and, in the transportation step, at least a portion of the sulfuric acid generated in the absorption step is supplied to the stripping step. 3 . 前記吸収工程、 ストリツビング工程、 および輸送工程をこの順で行い;且つ、 該輸送工程において、 ストリッビング工程でストリッビングした硫酸の少なくと も一部分を製品硫酸として分岐採取する請求項 1記載の製造方法。  3. The method according to claim 1, wherein the absorption step, the stripping step, and the transporting step are performed in this order; and in the transporting step, at least a part of the sulfuric acid stripped in the stripping step is branched and collected as product sulfuric acid. Production method. 4 . 硫酸の流れに対して並列に配置された二基以上の液体圧送システムを用いる 請求項 1記載の製造方法。  4. The production method according to claim 1, wherein two or more liquid pumping systems arranged in parallel to the sulfuric acid flow are used. 5 . 前記液体圧送システムにおいて、 気体として空気又は窒素を用いる請求項 1 記載の製造方法。  5. The method according to claim 1, wherein air or nitrogen is used as a gas in the liquid pumping system. 6 . アンモニアガスを水に吸収させることによりアンモニア水を生成させる吸収 工程と ;  6. an absorption step of generating ammonia water by absorbing ammonia gas into water; 前記吸収工程で生成したアンモニア水を冷却した後、 再度吸収工程へ循環させ る工程であって、 該循璟を、 接液部が非金属材料からなる液体圧送システムによ り行う工程とを含み; After cooling the ammonia water generated in the absorption step, it is circulated again to the absorption step Performing the circulation by a liquid pumping system in which the liquid contact part is made of a non-metallic material; 且つ、 前記液体圧送システムが、 前記アンモニア水を移送するための移送タン クと、 該移送タンクへアンモニア水を供給するための供給配管と、 前記移送タン クからアンモニア水を排出するための排出配管と、 前記移送タンクへ気体を供給 するための気体供給配管と、 前記移送タンクから気体を排出するための気体排出 配管とからなることを特徴とする高純度アンモニア水の製造方法。  And a transfer tank for transferring the ammonia water, a supply pipe for supplying the ammonia water to the transfer tank, and a discharge pipe for discharging the ammonia water from the transfer tank. A gas supply pipe for supplying gas to the transfer tank; and a gas discharge pipe for discharging gas from the transfer tank. 7 . アンモニア水の流れに対して並列に配置された二基以上の液体圧送システム を用いる請求項 6記載の製造方法。  7. The production method according to claim 6, wherein two or more liquid pumping systems arranged in parallel with the flow of the ammonia water are used. 8 . 前記液体圧送システムにおいて、 気体として空気又は窒素を用いる請求項 6 記載の製造方法。  8. The method according to claim 6, wherein air or nitrogen is used as the gas in the liquid pumping system.
PCT/JP1996/001629 1995-06-14 1996-06-14 Process for producing high-purity chemicals Ceased WO1997000227A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14732595A JPH08337416A (en) 1995-06-14 1995-06-14 Method for producing high-purity ammonia water
JP7/147325 1995-06-14
JP7/187052 1995-07-24
JP18705295A JPH0930803A (en) 1995-07-24 1995-07-24 Method for producing high-purity sulfuric acid

Publications (1)

Publication Number Publication Date
WO1997000227A1 true WO1997000227A1 (en) 1997-01-03

Family

ID=26477909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1996/001629 Ceased WO1997000227A1 (en) 1995-06-14 1996-06-14 Process for producing high-purity chemicals

Country Status (2)

Country Link
KR (1) KR19990022918A (en)
WO (1) WO1997000227A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103172034A (en) * 2013-03-27 2013-06-26 刘立文 Method for decoloring sulfuric acid by using high-frequency vibrator

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210683B2 (en) * 1983-07-21 1987-03-07 Showa Denko Kk
JPS6259520A (en) * 1985-09-09 1987-03-16 Mitsubishi Metal Corp Apparatus for producing ammonia water
JPS63208680A (en) * 1987-02-26 1988-08-30 Nippon Pillar Packing Co Ltd Air-driven type pump
JPH05186204A (en) * 1992-01-10 1993-07-27 Mitsubishi Kasei Corp Method for producing high-purity sulfuric acid
JPH0617012Y2 (en) * 1986-02-06 1994-05-02 株式会社ヤマダコ−ポレ−ション Bellows pump
JPH07174076A (en) * 1993-05-19 1995-07-11 Asti Sa D'exploitation pump

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210683B2 (en) * 1983-07-21 1987-03-07 Showa Denko Kk
JPS6259520A (en) * 1985-09-09 1987-03-16 Mitsubishi Metal Corp Apparatus for producing ammonia water
JPH0617012Y2 (en) * 1986-02-06 1994-05-02 株式会社ヤマダコ−ポレ−ション Bellows pump
JPS63208680A (en) * 1987-02-26 1988-08-30 Nippon Pillar Packing Co Ltd Air-driven type pump
JPH05186204A (en) * 1992-01-10 1993-07-27 Mitsubishi Kasei Corp Method for producing high-purity sulfuric acid
JPH07174076A (en) * 1993-05-19 1995-07-11 Asti Sa D'exploitation pump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103172034A (en) * 2013-03-27 2013-06-26 刘立文 Method for decoloring sulfuric acid by using high-frequency vibrator

Also Published As

Publication number Publication date
KR19990022918A (en) 1999-03-25

Similar Documents

Publication Publication Date Title
US4911761A (en) Process and apparatus for drying surfaces
US4984597A (en) Apparatus for rinsing and drying surfaces
US5164049A (en) Method for making ultrapure sulfuric acid
US6439247B1 (en) Surface treatment of semiconductor substrates
US5354428A (en) Apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
KR950006679B1 (en) Apparatus and method for treating liquid / gas mixtures
JPS63153825A (en) Method and apparatus for continuous recycling of extra-pure liquid for washing semiconductor wafer
KR101598401B1 (en) Method for manufacturing high purity sulfuric acid and system thereof
KR102327925B1 (en) Separation and regeneration apparatus and substrate processing apparatus
KR102253559B1 (en) Separation and regeneration apparatus and substrate processing apparatus
JPH06103686B2 (en) Surface drying treatment method and device
KR100605335B1 (en) System for supply and delivery of carbon dioxide with different purity requirements
US20130104943A1 (en) Substrate treating apparatus and chemical recycling method
WO1997000228A1 (en) Process for producing high-purity sulfuric acid
WO1997000227A1 (en) Process for producing high-purity chemicals
EP0428784B1 (en) Process for drying surfaces
JP2003305418A (en) Apparatus for removing organic coating film on surface of substrate
JPH1116873A (en) Cleaning drying method and cleaning drying device
JPS62106630A (en) processing equipment
Chang et al. Development of clean technology in wafer drying processes
US20070107748A1 (en) Vacuum cavitational streaming
JP2025143859A (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
KR200370586Y1 (en) Exhaust control system of installation production
JP2025143853A (en) Organic solvent recovery device, substrate treatment device, and organic solvent recovery method
RU6946U1 (en) INSTALLATION FOR CONTINUOUS LIQUID CHEMICAL REMOVAL OF POLYMER LAYERS AND OTHER CONTAMINATIONS FROM THE SURFACE OF PRODUCTS, PREVIOUSLY OF SEMICONDUCTOR PLATES

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR SG US

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1019970709387

Country of ref document: KR

WR Later publication of a revised version of an international search report
WWP Wipo information: published in national office

Ref document number: 1019970709387

Country of ref document: KR

WWW Wipo information: withdrawn in national office

Ref document number: 1019970709387

Country of ref document: KR