[go: up one dir, main page]

WO1996030717A1 - Sonde micromecanique pour microscopes a balayage - Google Patents

Sonde micromecanique pour microscopes a balayage Download PDF

Info

Publication number
WO1996030717A1
WO1996030717A1 PCT/EP1996/001321 EP9601321W WO9630717A1 WO 1996030717 A1 WO1996030717 A1 WO 1996030717A1 EP 9601321 W EP9601321 W EP 9601321W WO 9630717 A1 WO9630717 A1 WO 9630717A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
probe
micromechanical
piezo
probe according
Prior art date
Application number
PCT/EP1996/001321
Other languages
German (de)
English (en)
Inventor
Manfred Weihnacht
Günter Martin
Karlheinz Bartzke
Wolfgang Richter
Original Assignee
Carl Zeiss Jena Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19531466A external-priority patent/DE19531466C2/de
Application filed by Carl Zeiss Jena Gmbh filed Critical Carl Zeiss Jena Gmbh
Publication of WO1996030717A1 publication Critical patent/WO1996030717A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/02—Multiple-type SPM, i.e. involving more than one SPM techniques
    • G01Q60/04—STM [Scanning Tunnelling Microscopy] combined with AFM [Atomic Force Microscopy]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
    • G01Q10/04—Fine scanning or positioning
    • G01Q10/045—Self-actuating probes, i.e. wherein the actuating means for driving are part of the probe itself, e.g. piezoelectric means on a cantilever probe
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/02—Multiple-type SPM, i.e. involving more than one SPM techniques
    • G01Q60/06—SNOM [Scanning Near-field Optical Microscopy] combined with AFM [Atomic Force Microscopy]

Definitions

  • the invention relates to the field of measurement technology and relates to a micromechanical probe for scanning microscopes.
  • the probe can be used for atomic force microscopy (AFM), scanning tunneling microscopy (STM) and optical near-field microscopy (SNOM), with which topological, electrical and optical measurement data of surfaces can be obtained.
  • AFM atomic force microscopy
  • STM scanning tunneling microscopy
  • SNOM optical near-field microscopy
  • a micro-probe tip arranged on a probe is passed over the surface to be examined at a distance of a few nanometers.
  • the AFM evaluates the interatomic forces detected by the micro-probe tip and, in the case of the STM, the tunnel current of a few nA. which occurs at a voltage of a few mV between the tip and an electrically conductive surface.
  • Piezo actuators are essential in the technical implementation, which enable the probe guidance in the near field of the surface with the resolution of picometers.
  • a measuring technique that detects the interaction and a control mechanism keep the distance between the micro-probe tip and the surface to be examined at picometers constant during scanning.
  • the probe With the SNOM, the probe usually consists of an optically transparent tip with an aperture significantly smaller than the wavelength of the light.
  • the probe is guided in the near field over the sample to be examined and serves to send light emerging from its aperture to the sample.
  • the probe also serves as a light receiver or in the case of total reflection of the light on the sample surface in the evanescent field for the extraction of photons.
  • Micromechanical probes for the AFM and the STM are already known in various embodiments.
  • an arrangement designed for the STM is described in US Pat. No. 4,912,822, which enables static movements in 3 mutually perpendicular coordinate directions.
  • the arrangement which is constructed according to the cantilever principle and is produced by means of microelectronic technologies, has the shape of an extension arm with a micro-probe tip at the end.
  • the cantilever is designed as a layer package consisting of 2 piezo layers and a large number of metal layers serving as electrodes. The metal layers are arranged above, below and between the piezo layers and also laterally from one another.
  • the micro probe tip is made from tantalum or another electrically conductive material and is arranged vertically on the surface of the layer package.
  • the movements of the cantilever serve to bring the micro-probe tip closer to the surface to be examined and to guide it laterally over the surface.
  • the movements are made possible by utilizing the reciprocal piezoelectric effect in thin layers which are surrounded on both sides by electrodes.
  • the layer package is deformed by applying electrical voltages to the electrodes of the layer package. The deformation is possible as longitudinal expansion and bending. This makes it possible to move the micro-probe tip in all 3 spatial directions.
  • different electrical DC potentials are applied to selected pairs of electrodes. These potentials lead to movements in the longitudinal, thickness and transverse directions as well as to the tilting of the micro-probe tip.
  • This allows the micro-probe tip to both approach the surface in a defined manner and to be moved and tilted sideways.
  • the micro-probe tip is kept at a distance from a conductive surface with the aid of the applied voltages such that the tunnel current between the probe tip and the surface is constant.
  • the application of this arrangement is limited to the STM.
  • a micromechanical probe which consists of a quartz crystal and a stylus (Intern. Journ. Optoelectronics, 1993, Vol. 8, Nos. 5/6. 669-676).
  • the piezoelectrically excited probe needle vibrates at a frequency of 1 MHz perpendicular to the sample surface to be examined and allows the repulsive forces from the measurement of the phase behavior of the needle tip vibrating in the force field of the sample to be measured in a purely electrical manner.
  • the use of this probe is limited to the AFM.
  • Their force sensitivity is only in the range of nN and the time constant ⁇ which is decisive for the measuring dynamics is only in the ms range.
  • the invention has for its object to provide a universally applicable micromechanical probe for scanning microscopes, which enables scanning microscopic examinations with a higher lateral resolution and with a smaller time constant ⁇ in the ⁇ s range and thus guarantees a high measuring speed.
  • the probe consists of a carrier and an associated, designed as a layer package cantilever, which contains at least one piezo layer and several metal layers and which carries a micro-probe tip at its free end, the multilayer cantilever performing the probe functions for performing atomic force microscopy (AFM), scanning tunneling microscopy (STM) and near-field optical microscopy (SNOM) are combined by applying an alternating voltage to the piezo layer / s, the frequency of which corresponds to one of the resonance frequencies of the cantilever, and by the cantilever at least contains a light guide layer, which is connected in a light-guiding manner to an optically transparent micro-probe tip.
  • AFM atomic force microscopy
  • STM scanning tunneling microscopy
  • SNOM near-field optical microscopy
  • an alternating voltage is applied to the piezo layer / s, the frequency of which corresponds to the longitudinal resonance of the cantilever, and the micro-probe tip is arranged at the free end of the cantilever on the end face of the light guide layer.
  • the layer package forming the cantilever can expediently be continued as a layer system on or in the carrier.
  • the piezo layer / s can consist of zinc oxide (ZnO) or aluminum nitride (A1N) or a PZT material.
  • the piezo layer (s) of the layer package can only extend over part of the length of the boom, starting at the fixed end of the boom.
  • the metal layers of the layer package can only extend over part of the length of the boom, starting at the fixed end of the boom.
  • the metal layer on the surface of the piezo layer is interrupted in places, such that there are two strip-shaped, diametrically arranged piezo resonators which are connected to one another in an oscillation node by one end.
  • one of the metal layers can expediently be led to the end of the micro-probe tip.
  • the optical waveguide layer consists of an optically highly refractive material, preferably of silicon carbide (SiC).
  • optical waveguide layer at the free end of the cantilever is expediently tapered toward the micro-probe tip.
  • the micromechanical probe according to the invention is distinguished from the prior art in that it can be used for multimode scanning probe microscopy, in that it can be used universally for scanning AF microscopes for AF-STM and SNOM, with which topological, electrical and optical measurement data from surfaces can be obtained. Also of particular advantage are the significantly higher performance parameters compared to the known solutions.
  • the solution principle according to the invention thus offers the possibility of a substantial reduction in the probe dimensions. On this way it is possible to reduce the masses and increase the operating frequency to values well above 1 MHz, for example in the range from 50-100 MHz, and the sensitivity to touch or the lateral resolution of approximately 50 nm and the measuring speed are thus significantly increased.
  • the light-optical means provided for the SNOM and their configuration.
  • a purely dielectric optical waveguide made of a particularly high-refractive material is used for the spatial concentration of the light instead of the metal-coated probe tip that was previously customary.
  • This optical fiber guides the light without any significant loss of reflection or absorption.
  • the cross section of the optical waveguide can be very small, as a result of which local illumination of an object with high light intensity or local detection of the light intensity in the near field of an object with low optical losses is possible. This can shorten the time required to scan a microscopic image compared to the conventional arrangements.
  • the probe shown combines the functions required for force microscopy, tunnel microscopy and optical near-field microscopy and can therefore be used for multimode scanning microscopes.
  • a cantilever 2 projects beyond a carrier 1 and is equipped with two piezoelectric resonator tongues 3 and 4.
  • a probe tip 5 is located at the end of the resonator tongue 3.
  • the cantilever 2 consists of a layer package which is composed of an optical waveguide layer 6, a first metal layer 7, a piezoelectric layer 8 and a second metal layer 9.
  • the metal layers 7 and 9 have contact points 10 to 13 in the region of the carrier.
  • the resonator tongues 3 and 4 are excited to longitudinal vibrations with the aid of the piezoelectric layer 8.
  • an alternating voltage is applied between the metal layers 7 and 9 via the contact points 10 and 11 for the resonator tongue 3 and via the contact points 12 and 13 for the resonator tongue 4.
  • the frequency is chosen so that the wavelength of the longitudinal vibrations in the resonator tongues 3 and 4 is four times the length of the resonator tongues. In this case, the ends of the resonator tongues vibrate with maximum amplitude, and an oscillation node is formed at their connection point. If the resonator tongue is not to be used as a reference resonator for the resonator tongue 3, in deviation from this exemplary embodiment, the second metal layer 9 is not interrupted at the connection point between the resonator tongue 3 and the resonator tongue 4 and the AC voltage is, for example, only applied to the contact points 10 and 11 created.
  • the metal layer 7 lying within the layer package is guided on the micro-probe tip 5 to the end thereof and thus simultaneously serves as an electrode for realizing the tunnel microscopic function of the probe.
  • the light path can also be used in the opposite direction to detect optical signals from the sample.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

L'invention concerne une sonde micromécanique à usage universel, pour microscopes à balayage, permettant de réaliser des examens au microscope à balayage avec une résolution latérale et une vitesse de mesure élevées. Cette sonde comprend un support ainsi qu'une extension reliée à ce dernier, se présentant sous forme d'un ensemble de couches et comportant au moins une couche piézoélectrique et plusieurs couches métalliques, ainsi qu'une pointe de contact microscopique à son extrémité libre. Cette extension multicouche combine les fonctions d'une sonde permettant la réalisation de microscopie à force atomique (AFM), de microscopie à effet tunnel (STM) et de microscopie optique à champ proche (SNOM) car une tension alternative est appliquée à la(aux) couche(s) piézoélectrique(s) dont la fréquence coïncide avec l'une des fréquences de résonance de l'extension, et car l'extension comprend au moins une couche photoconductrice qui conduit la lumière à la pointe de contact microscopique optiquement transparente. Cette sonde permet d'obtenir des données de mesure topologiques, électriques et optiques de surfaces.
PCT/EP1996/001321 1995-03-30 1996-03-26 Sonde micromecanique pour microscopes a balayage WO1996030717A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19511612 1995-03-30
DE19511612.7 1995-03-30
DE19531466.2 1995-08-26
DE19531466A DE19531466C2 (de) 1995-03-30 1995-08-26 Mikromechanische Sonde für Rastermikroskope

Publications (1)

Publication Number Publication Date
WO1996030717A1 true WO1996030717A1 (fr) 1996-10-03

Family

ID=26013881

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1996/001321 WO1996030717A1 (fr) 1995-03-30 1996-03-26 Sonde micromecanique pour microscopes a balayage

Country Status (1)

Country Link
WO (1) WO1996030717A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0480645A1 (fr) * 1990-10-09 1992-04-15 Canon Kabushiki Kaisha Capteur du type cantilever, microscope à effet tunnel et dispositif de traitement d'information utilisant ce capteur
US5354985A (en) * 1993-06-03 1994-10-11 Stanford University Near field scanning optical and force microscope including cantilever and optical waveguide
WO1995003561A1 (fr) * 1993-07-22 1995-02-02 British Technology Group Limited Detecteur intelligent pour dispositif optique a champ proche
EP0652414A1 (fr) * 1993-11-05 1995-05-10 Seiko Instruments Inc. Microscope de balayage optique de champ proche/à force atomique combiné
WO1996003641A1 (fr) * 1994-07-28 1996-02-08 Kley Victor B Ensemble microscope a sonde de balayage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0480645A1 (fr) * 1990-10-09 1992-04-15 Canon Kabushiki Kaisha Capteur du type cantilever, microscope à effet tunnel et dispositif de traitement d'information utilisant ce capteur
US5354985A (en) * 1993-06-03 1994-10-11 Stanford University Near field scanning optical and force microscope including cantilever and optical waveguide
WO1995003561A1 (fr) * 1993-07-22 1995-02-02 British Technology Group Limited Detecteur intelligent pour dispositif optique a champ proche
EP0652414A1 (fr) * 1993-11-05 1995-05-10 Seiko Instruments Inc. Microscope de balayage optique de champ proche/à force atomique combiné
WO1996003641A1 (fr) * 1994-07-28 1996-02-08 Kley Victor B Ensemble microscope a sonde de balayage

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MOERS M H P ET AL: "PHOTON SCANNING TUNNELING MICROSCOPE IN COMBINATION WITH A FORCE MICROSCOPE", JOURNAL OF APPLIED PHYSICS, vol. 75, no. 3, 1 February 1994 (1994-02-01), pages 1254 - 1257, XP000430030 *
ZENHAUSERN F ET AL: "APERTURELESS NEAR-FIELD OPTICAL MICROSCOPE", APPLIED PHYSICS LETTERS, vol. 65, no. 13, 26 September 1994 (1994-09-26), pages 1623 - 1625, XP000470295 *

Similar Documents

Publication Publication Date Title
DE69714107T2 (de) Optische Wellenleitersonde und optisches System
DE69212576T2 (de) Raster-Mikroskop mit einem Kraftfühler
DE69825226T2 (de) Mikromechanischer XYZ-Objektträger für die Verwendung mit optischen Bauteilen
DE69619357T2 (de) Kombiniertes Nahfeld- und Interatomarkraftrastermikroskop
DE69736449T2 (de) Abtastvorrichtung, Herstellungsverfahren derselben und Rasterabtastmikroskop
DE69413374T2 (de) Faser-Tastspitze mit mehreren Durchmessern
DE3878710T2 (de) Strahlungsablenkungsvorrichtung.
EP1141673B1 (fr) Procede et dispositif pour la determination simultanee de l'adherence, de la friction et d'autres proprietes d'une surface d'echantillon
DE69618627T2 (de) Auslegerstrukturen
DE69714320T2 (de) Sonde für Atomkraftmikroskop, Verfahren zur Herstellung der Sonde und Atomkraftmikroskop
DE19510368C2 (de) Rasterabbildungssystem mit gekoppeltem Oszillator
DE69521355T2 (de) Optisches Nahfeld- und Atomkraft-Rastermikroskop
DE60037765T2 (de) Nanometrischer mechanischer Oszillator
DE10106854B4 (de) Mikro-Tastkopf und Vorrichtung zum Messen einer Probenoberfläche
DE102016214658A1 (de) Rastersondenmikroskop und Verfahren zum Untersuchen einer Probenoberfläche
DE19531466C2 (de) Mikromechanische Sonde für Rastermikroskope
DD297521A5 (de) Mikroskopisches verfahren und nahfeldreflexionsmikroskop
DE69223789T2 (de) Optisches Nahfeldabtastmikroskop
DE102007032866A1 (de) Resonanzverfahren zum Bestimmen der Federkonstante von Rastersondenmikroskopauslegern, die MEMS-Betätigungselemente verwenden
DE69433974T2 (de) Elektro-optisches instrument
DE112007001684T5 (de) Rastersondenmikroskop und Verfahren zum Messen der Relativposition zwischen Sonden
DE19852833A1 (de) Verfahren zur Bestimmung des Abstandes einer Nahfeldsonde von einer zu untersuchenden Probenoberfläche und Nahfeldmikroskop
DE112010004305T5 (de) Verschleissfreie Behandlung einer Materialoberfläche mit einem Rastersondenmikroskop
EP0764261B1 (fr) Dispositif pour detecter la topographie d'une surface
WO1996030717A1 (fr) Sonde micromecanique pour microscopes a balayage

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase