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WO1993019228A3 - Arseniates de titanyle cristallins dopes et preparation de ces composes - Google Patents

Arseniates de titanyle cristallins dopes et preparation de ces composes Download PDF

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Publication number
WO1993019228A3
WO1993019228A3 PCT/US1993/002806 US9302806W WO9319228A3 WO 1993019228 A3 WO1993019228 A3 WO 1993019228A3 US 9302806 W US9302806 W US 9302806W WO 9319228 A3 WO9319228 A3 WO 9319228A3
Authority
WO
WIPO (PCT)
Prior art keywords
arsenates
preparation
doped crystalline
mtioaso4
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1993/002806
Other languages
English (en)
Other versions
WO1993019228A2 (fr
Inventor
Albert Anthony Ballman
Lap Kin Cheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Priority to EP93908583A priority Critical patent/EP0632852B1/fr
Priority to JP51684093A priority patent/JP3289904B2/ja
Priority to DE69302809T priority patent/DE69302809T2/de
Publication of WO1993019228A2 publication Critical patent/WO1993019228A2/fr
Publication of WO1993019228A3 publication Critical patent/WO1993019228A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention se rapporte à des compositions cristallines dopées (telles que des cristaux monodomaine) de MTiOAsO4 (où M représente K, Rb et/ou Cs), qui contiennent un total d'au moins environ 10 ppm d'un dopant au Fe, Sc et/ou In. L'invention décrit égaleement un procédé de croissance par fondant, qui consiste à ajouter le dopant à un bain de fusion contenant les constituants pour former MTiOAsO4 en quantité efficace pour produire un cristal monodomaine dopé de MTiOAsO4 contenant au moins 10 ppm dudit dopant.
PCT/US1993/002806 1992-03-25 1993-03-25 Arseniates de titanyle cristallins dopes et preparation de ces composes Ceased WO1993019228A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP93908583A EP0632852B1 (fr) 1992-03-25 1993-03-25 Arseniates de titanyle cristallins dopes et preparation de ces composes
JP51684093A JP3289904B2 (ja) 1992-03-25 1993-03-25 ＭＴｉＯＡｓＯ４の単結晶の製造方法、ＭＴｉＯＡｓＯ４の単一領域結晶および結晶性のＭＴｉＯＡｓＯ４よりなる組成物
DE69302809T DE69302809T2 (de) 1992-03-25 1993-03-25 Dotierte kristalline titanylarsenaten und ihre herstellung

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US85705092A 1992-03-25 1992-03-25
US07/857,050 1992-03-25
US07/954,174 US5326423A (en) 1992-03-25 1992-09-30 Doped crystalline titanyl arsenates and preparation thereof
US07/954,174 1992-09-30

Publications (2)

Publication Number Publication Date
WO1993019228A2 WO1993019228A2 (fr) 1993-09-30
WO1993019228A3 true WO1993019228A3 (fr) 1994-03-03

Family

ID=27127389

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1993/002806 Ceased WO1993019228A2 (fr) 1992-03-25 1993-03-25 Arseniates de titanyle cristallins dopes et preparation de ces composes

Country Status (5)

Country Link
US (2) US5326423A (fr)
EP (1) EP0632852B1 (fr)
JP (1) JP3289904B2 (fr)
DE (1) DE69302809T2 (fr)
WO (1) WO1993019228A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879590A (en) * 1990-07-13 1999-03-09 North American Philips Corporation Low conductivity, doped KTIOPO4 and devices based thereon
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252537A1 (fr) * 1986-05-30 1988-01-13 Koninklijke Philips Electronics N.V. Procédé de croissance de cristaux de KTi0P04 à partir d'une solution
EP0410581A1 (fr) * 1989-07-28 1991-01-30 Sumitomo Metal Mining Company Limited Procédé de préparation de monocristaux de l'arsenate de potassium-titanium
EP0466260A1 (fr) * 1990-07-13 1992-01-15 Koninklijke Philips Electronics N.V. KTiOP04 dopé et à basse conductivité, et dispositifs utilisant ce matériau
US5084206A (en) * 1990-02-02 1992-01-28 E. I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949323A (en) * 1974-03-14 1976-04-06 E. I. Du Pont De Nemours & Company Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices
US4231838A (en) * 1978-04-20 1980-11-04 E. I. Du Pont De Nemours And Company Method for flux growth of KTiOPO4 and its analogues
US4305778A (en) * 1979-06-18 1981-12-15 E. I. Du Pont De Nemours And Company Hydrothermal process for growing a single crystal with an aqueous mineralizer
FR2609976B2 (fr) * 1985-07-26 1989-11-03 Centre Nat Rech Scient Syntheses en flux de cristaux et epitaxies de solutions solides isotypes de ktiopo4
FR2585345B1 (fr) * 1985-07-26 1989-08-18 Centre Nat Rech Scient Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle
US5066356A (en) * 1990-01-05 1991-11-19 E. I. Du Pont De Nemours And Company Hydrothermal process for growing optical-quality single crystals

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252537A1 (fr) * 1986-05-30 1988-01-13 Koninklijke Philips Electronics N.V. Procédé de croissance de cristaux de KTi0P04 à partir d'une solution
EP0410581A1 (fr) * 1989-07-28 1991-01-30 Sumitomo Metal Mining Company Limited Procédé de préparation de monocristaux de l'arsenate de potassium-titanium
US5084206A (en) * 1990-02-02 1992-01-28 E. I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof
EP0466260A1 (fr) * 1990-07-13 1992-01-15 Koninklijke Philips Electronics N.V. KTiOP04 dopé et à basse conductivité, et dispositifs utilisant ce matériau

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHENG ET AL: "Crystal growth of KTiOPO4 isomorphs from tungstate and molybdate fluxes", JOURNAL OF CRYSTAL GROWTH., vol. 110, no. 4, April 1991 (1991-04-01), AMSTERDAM NL, pages 697 - 703 *
CHENG ET AL: "properties of doped and undoped crystals of single domain KTiOAsO4", APPLIED PHYSICS LETTERS., vol. 62, no. 4, 25 January 1993 (1993-01-25), NEW YORK US, pages 346 - 348 *

Also Published As

Publication number Publication date
US5326423A (en) 1994-07-05
JPH07506079A (ja) 1995-07-06
DE69302809D1 (de) 1996-06-27
EP0632852A1 (fr) 1995-01-11
JP3289904B2 (ja) 2002-06-10
DE69302809T2 (de) 1996-09-26
EP0632852B1 (fr) 1996-05-22
US5480569A (en) 1996-01-02
WO1993019228A2 (fr) 1993-09-30

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