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WO1993012267A1 - Polymeric resin, in particular for depositing metal on a substrate, and use thereof - Google Patents

Polymeric resin, in particular for depositing metal on a substrate, and use thereof Download PDF

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Publication number
WO1993012267A1
WO1993012267A1 PCT/BE1992/000053 BE9200053W WO9312267A1 WO 1993012267 A1 WO1993012267 A1 WO 1993012267A1 BE 9200053 W BE9200053 W BE 9200053W WO 9312267 A1 WO9312267 A1 WO 9312267A1
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WO
WIPO (PCT)
Prior art keywords
substrate
resin
palladium
copper
acetate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/BE1992/000053
Other languages
French (fr)
Inventor
Olivier Dupuis
Henri Sendrowicz
Jean-Philippe Soumillion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SENSORS AND SYNERGY SA
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SENSORS AND SYNERGY SA
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Filing date
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Publication of WO1993012267A1 publication Critical patent/WO1993012267A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5188Metallising, e.g. infiltration of sintered ceramic preforms with molten metal organic
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/09Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C08K5/098Metal salts of carboxylic acids
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204Radiation, e.g. UV, laser
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073Multistep pretreatment
    • C23C18/208Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/25Metals
    • C03C2217/251Al, Cu, Mg or noble metals
    • C03C2217/253Cu
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/25Metals
    • C03C2217/251Al, Cu, Mg or noble metals
    • C03C2217/254Noble metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/25Metals
    • C03C2217/261Iron-group metals, i.e. Fe, Co or Ni
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/17Deposition methods from a solid phase
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Definitions

  • Polymeric resin In particular for the deposition of metal on a substrate and its use.
  • the present invention relates to a polymeric resin, used in particular for the deposition of metal on substrates, and its use.
  • the solutions of palladium acetate in chloroform are unstable and can only be stored for 48 hours; after this period, the formation of metallic palladium in the solution is observed.
  • these formulations using chloroform give rise to periodic structures, that is to say to a succession of metallic waves. They also have the drawback of not decomposing under low power ultraviolet radiation (ultraviolet lamps) and once spread, they decompose quickly into metallic palladium. Since these chloroform solutions are also very low in viscosity, the spreading methods used are limited to the technique of coating by rotation. These solutions also pose major cleaning problems during the after-treatment of the substrates.
  • Patent US-A-4,927,897 relates to catalytic solutions of polymeric compounds particular composition completely different from that of the polymer resins of the invention and covers the unique aspect of catalyst for non-electrolytic baths, giving non-selective metallic deposits and only after thermal decomposition.
  • Patent application EP-A-0 092 601 relates to catalytic solutions or suspensions of compounds of coordination with palladium and in particular of palladium acetate.
  • organic solvents are used in combination with vehicles, such as, in particular, cellulose derivatives.
  • Patent application EP-A-0 243 794 relates to polymer solutions of coordination compounds but without also mentioning cyanoethylcellulose and hydroxypropylme ⁇ thylcellulose as cellulose derivatives.
  • these two EP patent applications cover, like the aforementioned American patent, the unique aspect of catalyst for non-electrolytic baths, the disadvantage of which is to give rise to non-selective metallic deposits and only after thermal decomposition. .
  • One of the essential aims of the present invention therefore consists in remedying the disadvantages mentioned above and to present a polymeric resin, in particular for the deposition of metal on a substrate, extremely stable, which can be used under infrared, visible and ultraviolet radiation even of low power and which, once spread on the subs ⁇ trat, does not decompose spontaneously.
  • this resin during its decomposition under laser radiation, does not give rise, like formulations using chloroform, to periodic structures, that is to say to a succession of metallic waves but indeed to traces straight and homogeneous metal and, given its adjustable viscosity, its method of spreading on the substrate is not limited to the coating technique by rotation.
  • the metallic deposition can be carried out selectively and directly, without having to resort to the use of catalytic or non-electrolytic baths.
  • the polyene resin comprises, in combination, a coordination compound chosen from the group comprising palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, their hydrates and their mixtures, and cyanoethylcellulose, dissolved in dimethylformamide. If water is used as solvent, the polymeric resin will comprise, in combination, a coordination compound chosen from the group comprising copper acetate, nickel acetate, copper formate, nickel formate, their hydrates and mixtures thereof, and hydroxypropyl methylcellulose.
  • the concentrations of coordinating compound and of cyanoethylcellulose are respectively from 1.10 " to 6.10 " mol and from 5 to 50 g per liter of dimethylformamide, the concentration of compound coordination, per liter of dimethylformamide, when the compound of coordination is hydrated copper acetate, being 2.5.10 "'to 6.10 " ' mole and, when it is nickel acetate, its concentration is 3.3.10 "'mole.
  • the concentrations of coordination compound and of cyanoethylcellulose, per liter of dimethylformamide, when the coordination compound is palladium acetate are respectively 1.10 "3 at 3.10 "'mole, advantageously 9.10 ' 2 mole and from 5 to 50 g, advantageously 10 g for the deposition of catalytic palladium, and from 8.10 " 2 to 3.1 ⁇ "1 mole, advantageously 9.10 " 2 mole and 20 at 50 g, advantageously 30 g for the deposition of conductive palladium.
  • the concentrations of coordination compound and of hydroxypropyl methylcellulose are respectively from 1.10 "3 to 6.10 " mol and from 1 to 50 g per liter of water, these concentrations, when the coordination compound is hydrated copper acetate, being respectively 4.10 "1 mole and 8 g per liter of water, and when the coordination compound is of copper formate, said concentrations are respectively 5.5 ⁇ 10 * 'mole and 4 g per liter of water.
  • the present invention also relates to the use of the palladium polymer resin, and more particularly to a process for depositing palladium on the surface of a substrate.
  • This process is characterized in that it consists in applying a thin layer of the aforementioned resin containing the palladium to be deposited on the surface of the substrate, in irradiating the surface of this substrate covered with this thin layer of resin by means of- a source of visible, ultraviolet or infrared light so as to cause a deposit of palladium on the surface of the substrate at the location of the irra- and remove the remaining layer of unirradiated resin.
  • the surface of this substrate covered with this thin layer of resin is treated by a thermal source so to cause a deposit of palladium on the surface of the substrate.
  • a visible light source this is constituted by an ionized argon laser adjusted in the visible and, when an ultraviolet light source is used, this is this is made up of a pulsed excimer laser, an ultraviolet lamp or an ionized argon laser set in ultraviolet.
  • the invention also provides a method of depositing copper or nickel on the surface of a substrate.
  • This process is characterized in that it consists in applying a thin layer of the polymeric resin containing copper or nickel to be deposited on the surface of the substrate, in irradiating the surface of this subs ⁇ trat covered with this thin layer of resin in by means of a visible, ultraviolet or infrared laser source so as to cause a deposit of copper or nickel on the surface of the substrate at the location of the irradiated areas and to remove the remaining layer of non-irradiated resin.
  • an ionized argon laser adjusted in the visible range is used as visible laser source and as an ultraviolet laser source a pulsed excimer laser or an ionized argon laser adjusted in the ultraviolet.
  • the surface of the substrate is cleaned before applying the resin layer thereto and, in the case where the substrate is a ceramic material, the surface of the latter is cleaned by immersing it for about 10 minutes in a 2% solution of hydrofluoric acid and 10% sodium chloride and then rinsing it with deionized water.
  • the invention also relates to a method of metallization of the surface of the substrate to be treated, according to which, after the removal of the possible remaining layer of non-irradiated resin (in the case use of a light source), the substrate covered with the palladium deposit is immersed in a catalytic bath to allow the deposition of a metallization layer on this palladium deposit.
  • the invention also provides, in the case of palladium resin, a process for direct metallization of the substrate, according to which, after having applied the thin layer of resin containing palladium on the surface of said substrate, the latter is dried and directly immerses the substrate covered with this resin in a catalytic bath to allow the deposition of a layer of metal on said substrate.
  • a process for direct metallization of the substrate according to which, after having applied the thin layer of resin containing palladium on the surface of said substrate, the latter is dried and directly immerses the substrate covered with this resin in a catalytic bath to allow the deposition of a layer of metal on said substrate.
  • polymer resins of the invention are to replace the chloroform solutions of palladium acetate known hitherto, the use of which is limited and the major drawback of which is their low stability during storage (around 2 days maximum).
  • polymeric resins have been developed comprising a coordination compound combined with cyanoethylcellulose or hydroxypro ⁇ pylmethylcellulose, in solution in a solvent, the solvent used being either dimethylformamide when the resin contains cyanoethylcellulose, or l water when the resin contains hydroxypropylmethylcel ⁇ lulose.
  • These polymeric resins have the advantage of decomposing under infrared and visible radiation as well as under low power ultraviolet radiation and of being extremely stable in storage, for minimum periods of two months and up to up to 'at one year.
  • the coordination compounds are chosen from palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, their hydra and mixtures of at least two or more of these compounds, palladium acetate and its hydrates, however, not being used when the polymeric resin contains hydroxypropylmethylcellulose and water as a solvent.
  • Cyanoethylcellulose is a polymer of general formula in which n represents the degree of polymerization.
  • cyanoethylcellu- lose is a cellulose on which cyanoethyl groups are grafted.
  • the polymeric nature of the basic material that is to say cellulose, does not change, the degree of polymerization of the cellulose being unchanged.
  • Excellent results have been obtained with a cyanoethylcellulose with a degree of substitution (average number of cyanoethyl groups grafted onto the cellulose) from 2.5 to 3.0 and with a degree of polymerization (n) varying from 600 at 3000.
  • the solvent that is to say dimethylformamide or water, will be chosen according to the coordination compound and the cellulosic material used.
  • the solvent in the case where the polymeric resin contains cyanoethylcellulose, the solvent will be dimethylformamide, cyanoethylcel ⁇ lulose being in fact insoluble in water, and the coordinating compound will be palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, one of their hydrates or a mixture of two or more of these compounds, and in the case where the polymeric resin contains hydroxypropylmethylcellulose , the solvent will be water and the coordination compound copper acetate, nickel acetate, copper formate, nickel formate, one of their hydrates or a mixture of at least two of these compounds .
  • the coordination compound and the cyano- ethylcellulose in concentrations ranging respectively from 1.10 "3 to 6.10 " 'mole and from 5 to 50 g per liter of dimethylformamide.
  • the coordinating compound when the coordinating compound is hydrated copper acetate [Cu (Ac) 2 .H 2 0], its concentration, per liter of dimethylformamide, will be 2.5.10 " 'to 6.10 " 'mole, and preferably 2.10 ' 1 mole.
  • concentrations When combining nickel acetate with cyanoethylcellulose, their respective concentrations will be approximately 3.3.10 ' ' mole and 5 to 50 g per liter of dimethylformamide.
  • the type of metalli ⁇ deposit that is to say catalytic or conductive
  • the concentration of coordination compound of the resin when it is desired to obtain a deposit of conductive palladium, the concentration of palladium acetate [Pd (Ac) 2 ] could be different from that used when it is desired to obtain a deposit of catalytic palladium.
  • the table below gives the extended and preferred concentration ranges of Pd acetate and cyanoethylcellulose per liter of dimethylformamide, depending on whether one wishes to obtain a deposit of catalytic or conductive palladium on a ceramic substrate.
  • the resin of the invention by its polymeric nature, is not a simple mixture but a combination or, more particularly, a complex of the components brought into contact. Infrared spectroscopy and photoelectron studies have shown that a new molecule is obtained: in fact, when the three components of the above table are used, a new molecule is obtained by complexation of palladium with the dimethylformamide and / or cyanoethylcellulose.
  • the concentrations of these respective constituents are respectively from 1.10 "3 to 6.10"'mole and from 1 to 50 g per liter of water .
  • the concentrations of hydrated copper acetate and hydroxypropylmethylcellulose are preferably respectively 4.10 "! Mol and 8 g per liter of water, and when the coordination compound is formate copper, copper formate and hydroxypropyl methylcellulose concentrationsrespectively advantageously 5.5.10 " 'mole and 4 g per liter of water.
  • a thin layer of the polymeric resin of the invention containing the metal in question is applied to the surface of the subs ⁇ trat, the surface of this substrate covered with this fine resin layer is irradiated by means of a visible, ultraviolet or infrared light source in the case of palladium, or by means of a visible, ultraviolet or infrared laser source in the case of copper and nickel, so as to cause a deposition of palladium, copper or nickel depending on the source used, on the surface of the substrate at the location of the irradiated areas and removing the remaining unirradiated resin layer.
  • the so-called spin-coating technique is used to apply the layer of polymeric resin to the surface of the substrate or support.
  • This coating technique well known to specialists, consists in depositing the substrate or support on a spinner by maintaining it thereon by suction, for example by means of a vacuum pump, to cover it with the necessary volume of resin for obtain total coverage and then rotate the spinner while controlling its acceleration, i.e. the number of revolutions per minute and per second to reach the chosen speed, its rotation speed and the rotation time (time delay ).
  • accelerations of 400 to 200 revolutions / minute / second, rotation speeds of 200 to 1000 revolutions / minute and rotation times ranging from 60 to 99 seconds.
  • a visible source mention will be made of the ionized argon laser set in the visible range, with a wavelength from 454.5 nm to 528.7 nm, with a power of 0.100 to 10 W and a speed d '' writing from 30 to 4000 ⁇ m / sec.
  • ultraviolet sources examples include the pulsed excimer laser, with a wavelength of 248 nm, with an energy of 150 to 750 mJ / cm 2 , with a number of pulses from 3 to 70 and a frequency from 10 to 50 Hz, ultraviolet lamps with a wavelength of 254 nm and a power of 5 to 100 W (irradiation duration of 2 hours to 48 hours) (only for palladium deposition) and the ionized argon laser set in the ultraviolet.
  • the pulsed excimer laser with a wavelength of 248 nm, with an energy of 150 to 750 mJ / cm 2 , with a number of pulses from 3 to 70 and a frequency from 10 to 50 Hz
  • ultraviolet lamps with a wavelength of 254 nm and a power of 5 to 100 W (irradiation duration of 2 hours to 48 hours) (only for palladium deposition) and the ionized argon laser set in the ultraviolet.
  • irradiation will generally be carried out through a mask containing the design or pattern produced.
  • a mask containing the design or pattern produced In the case of an ultraviolet lamp, such as that represented by the reference numeral 1 (FIG. 1), the mask 2 containing the design or pattern produced, subjected to UV radiation 3 will be in contact with the substrate 4 (distance from lamp to support / mask: 0.5 to 1 cm).
  • a pulsed excimer laser such as that represented by the reference numeral 5 (FIG.
  • the writing scheme will in fact be done by projection by means of a telescope, constituted by a set of lenses 6 and 7 arranged between the laser 5 and the mask 2, which makes it possible to obtain a parallel beam 8 depending on the choice of these lenses 6 and 7.
  • 6 is a concave plane lens, with a focal length of 100 mm and 7 a plane lens convex 200 mm focal length.
  • the mask 2 consists of the drawing of the circuit to be drawn on the substrate 4 and is projected onto the latter.
  • the lens 9, arranged between the mask 2 and the substrate 4, allows the projection of the mask pattern on the substrate.
  • the masks used within the framework of the arrangements of these FIGS. 1 and 2 are based on chromium on quartz and are in fact made up of a quartz blade on which a thin layer of chromium has been vaporized. Masks, such as pierced aluminum can also be used. Technology masking used in this regard is in fact the same as that used in the manufacture of integrated circuits or VLSI (Very Large Scale Integration, manufacture of integrated circuits).
  • VLSI Very Large Scale Integration, manufacture of integrated circuits.
  • the desired design or pattern is then obtained by moving the sample 4 by a table or a system of X-Y tables (not shown) controlled by computer.
  • identical or similar elements have been designated by the same references.
  • other laser sources such as laser diodes or even YAG lasers.
  • the type of laser used does not depend on the nature of the substrate but rather on the nature of the application. This is how, for example, to deposit catalytic palladium on large surfaces without specific drawing (from 60 ⁇ m 2 to 2 mm 2 ) (writing by projection, see FIG. 2) the excimer laser seems the most suitable.
  • the laser sources are preferable in a large number of cases because the advantages conferred by the use of the laser beams are the speed of the process (from 1 to 2 minutes), the selectivity of the deposit (any type of drawing can be considered) and a high resolution.
  • the invention also provides a method of metallizing the surface of the substrate thus treated, that is to say by means of a light or thermal source, according to which, after the removal of the layer of polymeric resin to the non-irradiated palladium remaining in the case of the use of a light source, the substrate covered with the palladium deposit is immersed in a catalytic bath to allow the deposition of a metallization layer on this palladium deposit.
  • Metals which can be deposited via these catalytic baths to form the metallization layer are in particular copper and / or nickel.
  • Substrates which can be used in the context of the invention are ceramic materials, in particular those used for microelectronics, polymeric substrates, such as epoxides, glass, silica, quartz, fabrics and certain semi-materials -conductors. In fact, given the great diversity of usable energy sources,. there is practically no limitation as to the nature of the supports. Each of these requires appropriate pre- and post-treatment.
  • the pretreatment consists of cleaning the surface of the substrate before applying the resin layer, with deionized water and technical acetone and the post-treatment consists in removing the non-irradiated resin. by soaking in acetonitrile and rinsing with water, deionized or not.
  • the ceramic supports and the epoxy supports are the only ones to require a more specific treatment, and in particular, as will be seen in the application examples given below concerning the ceramic supports, the use of a ultrasonic acetonitrile bath.
  • Excimer laser (optical assembly according to figure 2): Wavelength: 248 nm Energy: 450 mJ / cm 2 Number of pulses: 70
  • UV lamp (optical assembly according to figure 1): Wavelength: 254 nm Power: 100 W Duration of irradiation: 2 h 00
  • the baths used are baths which catalyze nickel.
  • the nickel ions in aqueous solution are reduced by hypophosphite, which produces not a nickel deposit but an Ni-P alloy containing 12 to 13% of phosphorus depending on the pH of the bath.
  • - Bath temperature between 90 and 100 ° C source of nickel ions: nickel sulfate in aqueous solution; 7.82 g / 1 nickel sulfate reducing agent: sodium hypophosphite; 8.5 to 7.2 g / 1 - complexing agent: glycolic acid; 20 to 30 g / 1 pH control agent: 4.7-5.1; H 2 S0 4 diluted additives: stabilizers, wetting agents, fluorinated compounds; 0.02 to 0.3 g / 1.
  • a resin identical to that of Example 1 is prepared, but replacing the cyanoethylcellulose by ethylcellulose. It is spread by rotation on pre-treated ceramic as in Example 1. Direct metallization of the surface of the ceramic substrate to be treated, after drying of the resin layer at a temperature of 65 ° C and direct soaking of the ceramic substrate in a catalytic bath, cannot be obtained, the resin dispersing in the catalytic bath which is thus irreparably polluted. The substrate is not metallized. In addition, this resin can only be used for 24 hours, because after this time a precipitate of metallic palladium is observed on the walls of the container.
  • Example 3 Direct metallization of ceramic substrates and epoxides a) Direct metallization of ceramics:
  • the resin used in this case is identical to that used in Example 1, as is the pretreatment of the supports and spreading of the resin.
  • One ceramic thus treated is immersed in a copper catalytic bath and another in a nickel catalytic bath. After 5 minutes, the substrates covered with copper or nickel (2 ⁇ m) are removed from the baths, rinsed with water and dried (paper towel).
  • the metallic deposits obtained are conductive and adherent (30 N / cm).
  • the resin used in this case is also identical to that of Example 1, the pretreatment of the epoxy supports being carried out according to the procedure proposed by Shipley, this method consisting in passing the supports through four baths different pretreatment, with abundant rinsing with water between each bath. These baths are made up of packaging and / or cleaning solutions well known to specialists, the second bath being in particular made up of KMn0 4 at 60 g / liter.
  • the purpose of this pretreatment is to clean and strip the surface of the epoxy in order to adhere the metallic layers of copper and nickel.
  • the spreading of the resin is also done as indicated in the context of Example 1.
  • An epoxy substrate thus treated is immersed in a catalytic bath with copper and another in a catalytic bath with nickel. After 5 minutes, the substrates covered with copper or nickel (2 ⁇ l) are removed from the baths, rinsed with water and dried (paper towel).
  • the metallic deposits obtained are conductive and adherent (30 N / cm).
  • the polymeric resins of the invention are new complexes.
  • the latter not only improves the quality of the deposits and the selectivity of these may give rise to a modular viscosity, forming a polymeric film after the step of coating by rotation or "spin-coating".
  • the cyanoethylcellulose added to the solutions of palladium acetate must not absorb the incident radiation (that is to say, it must be transparent to UV). On the other hand, it must be soluble in solvents of palladium acetate. This is the case with other solvents, such as chloroform.
  • the organometallic palladium resin is only stable in dimethylformamide.
  • chloroform after several hours, there is precipitation of a mirror of metallic palladium.
  • the resin consists of ethylcellulose (rather than cyanoethylcellulose)
  • the same type of deposit of a metallic palladium mirror was observed after 24 hours.
  • PVC as a polymer
  • no metallic deposit could be observed after irradiation under UV lamps. Consequently, the results obtained with cyanoethylcellulose show that this polymer does not play a simple role of agent regulating the viscosity.

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Abstract

A polymeric resin, in particular for depositing metal on a substrate, including a combination of a complex compound chosen from the group which includes palladium acetate, copper acetate, nickel acetate, copper formiate, nickel formiate, hydrates thereof and mixtures thereof; and cyanoethylcellulose dissolved in dimethylformamide or hydroxypropylmethylcellulose dissolved in water, the palladium acetate being unsuitable in the latter case; and uses thereof.

Description

"Résine polvmérique. en particulier pour le dépôt de métal sur un substrat et son utilisation". "Polymeric resin. In particular for the deposition of metal on a substrate and its use".

La présente invention a pour objet une résine polymérique, servant en particulier pour le dépôt de métal sur des substrats, et son utilisation.The present invention relates to a polymeric resin, used in particular for the deposition of metal on substrates, and its use.

Les premières expériences détaillées de dépôt direct (écriture directe) de traces de palladium métallique sur substrat ont été effectuées par Gross et coll., voir notamment à ce sujet Appl. Phys. Lett. 46, 1184 (1985) . Pour ce faire, ils utilisèrent un laser à argon ionisé pour décomposer des films d'acétate de palladium, étalés par la technique dite de revêtement par rotation "spin-coating" à partir d'une solution de ce composé dans le chloroforme. H. Esrom et coll., Mat. Res. Symp. Proc. 131, 581 (1989) ont effectué les mêmes expériences en projection, à l'aide d'un laser exci ère. Les techniques proposées par ces auteurs présentent toutefois de nombreux inconvénients et s'avèrent limi¬ tées dans certaines applications. En effet, les solu- tiohs d'acétate de palladium dans le chloroforme sont instables et ne se conservent que pendant 48 heures; après cette période on observe la formation de palladium métallique dans la solution. De plus, lors de leur décomposition sous rayonnement laser, ces formulations utilisant du chloroforme donnent naissance à des struc¬ tures périodiques, c'est-à-dire à une succession de vagues métalliques. Elles présentent également l'incon¬ vénient de ne pas se décomposer sous les rayonnements ultraviolets de faible puissance (lampes ultraviolettes) et une fois étalées, elles se décomposent rapidement en palladium métallique. Ces solutions au chloroforme étant en outre très peu visqueuses, les méthodes d'étalement utilisées sont limitées à la technique de revêtement par rotation. Ces solutions posent également de gros problè- mes de nettoyage lors de l'après-traitement des subs¬ trats.The first detailed experiments of direct deposition (direct writing) of traces of metallic palladium on substrate were carried out by Gross et al., See in particular on this subject Appl. Phys. Lett. 46, 1184 (1985). To do this, they used an ionized argon laser to decompose palladium acetate films, spread by the so-called spin-coating technique from a solution of this compound in chloroform. H. Esrom et al., Mat. Res. Nice. Proc. 131, 581 (1989) carried out the same experiments in projection, using an exciter laser. The techniques proposed by these authors, however, have many drawbacks and prove to be limited in certain applications. In fact, the solutions of palladium acetate in chloroform are unstable and can only be stored for 48 hours; after this period, the formation of metallic palladium in the solution is observed. In addition, during their decomposition under laser radiation, these formulations using chloroform give rise to periodic structures, that is to say to a succession of metallic waves. They also have the drawback of not decomposing under low power ultraviolet radiation (ultraviolet lamps) and once spread, they decompose quickly into metallic palladium. Since these chloroform solutions are also very low in viscosity, the spreading methods used are limited to the technique of coating by rotation. These solutions also pose major cleaning problems during the after-treatment of the substrates.

On mentionnera également le brevet US-A- 4.927.897 ainsi que les demandes de brevet EP-A- 0 092 601 et 0 243 794. Le brevet US-A-4.927.897 con- cerne des solutions catalytiques de composés polyméri- queε particuliers de composition totalement différente de celle des résines polymériques de l'invention et couvre l'aspect unique de catalyseur pour bains non électrolytiques, donnant des dépôts métalliques non sélectifs et uniquement après décomposition thermique. La demande de brevet EP-A-0 092 601 concerne des solu¬ tions ou suspensions catalytiques de composés de coordi¬ nation au palladium et notamment d'acétate de palladium. On utilise pour cela, outre les composés de coordina- tion, des solvants organiques en combinaison avec des véhicules, tels que, notamment, des dérivés cellulosi¬ ques. Ni le dimethylformamide comme solvant organique ni lacyanoethylcelluloseet 1-hydroxypropylméthylcellulose comme dérivés cellulosiques ne sont cités. La demande de brevet EP-A-0 243 794 se rapporte à des solutions polymériques de composés de coordination mais sans citer également la cyanoethylcellulose et l'hydroxypropylme¬ thylcellulose en tant que dérivés cellulosiques. De plus, ces deux demandes de brevet EP couvrent, tout comme le brevet américain susmentionné, l'aspect unique de catalyseur pour bains non électrolytiques, dont l'inconvénient est de donner lieu à des dépôts métalli¬ ques non sélectifs et uniquement après décomposition thermique. Un des buts essentiels de la présente invention consiste, par conséquent, à remédier aux inconvénients précités et à présenter une résine polymé- rique, en particulier pour le dépôt de métal sur un substrat, extrêmement stable, pouvant être utilisée sous des rayonnements infrarouge, visible et ultraviolet même de faible puissance et qui, une fois étalée sur le subs¬ trat, ne se décompose pas spontanément. De plus, cette résine lors de sa décomposition sous rayonnement laser, ne donne pas lieu à l'instar des formulations utilisant du chloroforme, à des structures périodiques, c'eεt-à- dire à une succession de vagues métalliques mais bien à des traces métalliques rectilignes et homogènes et, compte tenu de sa viscosité ajustable, sa méthode d'étalement sur le substrat n'est pas limitée à la technique de revêtement par rotation. Le dépôt étalli- que peut être réalisé de façon sélective et directe, sans devoir recourir à l'utilisation de bains catalyti¬ ques ou non électrolytiques.Mention will also be made of patent US-A-4,927,897 as well as patent applications EP-A- 0 092 601 and 0 243 794. Patent US-A-4,927,897 relates to catalytic solutions of polymeric compounds particular composition completely different from that of the polymer resins of the invention and covers the unique aspect of catalyst for non-electrolytic baths, giving non-selective metallic deposits and only after thermal decomposition. Patent application EP-A-0 092 601 relates to catalytic solutions or suspensions of compounds of coordination with palladium and in particular of palladium acetate. For this, in addition to the coordination compounds, organic solvents are used in combination with vehicles, such as, in particular, cellulose derivatives. Neither dimethylformamide as organic solvent nor lacyanoethylcellulose and 1-hydroxypropylmethylcellulose as cellulose derivatives are mentioned. Patent application EP-A-0 243 794 relates to polymer solutions of coordination compounds but without also mentioning cyanoethylcellulose and hydroxypropylme¬ thylcellulose as cellulose derivatives. In addition, these two EP patent applications cover, like the aforementioned American patent, the unique aspect of catalyst for non-electrolytic baths, the disadvantage of which is to give rise to non-selective metallic deposits and only after thermal decomposition. . One of the essential aims of the present invention therefore consists in remedying the disadvantages mentioned above and to present a polymeric resin, in particular for the deposition of metal on a substrate, extremely stable, which can be used under infrared, visible and ultraviolet radiation even of low power and which, once spread on the subs¬ trat, does not decompose spontaneously. In addition, this resin during its decomposition under laser radiation, does not give rise, like formulations using chloroform, to periodic structures, that is to say to a succession of metallic waves but indeed to traces straight and homogeneous metal and, given its adjustable viscosity, its method of spreading on the substrate is not limited to the coating technique by rotation. The metallic deposition can be carried out selectively and directly, without having to resort to the use of catalytic or non-electrolytic baths.

A cet effet, suivant l'invention, la résine poly érique comprend, en combinaison, un composé de coordination choisi dans le groupe comprenant l'acétate de palladium, l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, leurs hydrates et leurs mélanges, et de la cyanoethylcellulo¬ se, en solution dans du dimethylformamide. Si l'eau est utilisée comme solvant, la résine polymérique compren¬ dra, en combinaison, un composé de coordination choisi dans le groupe comprenant l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, leurs hydrates et leurs mélanges, et de 1'hydroxypropyl- méthylcellulose.To this end, according to the invention, the polyene resin comprises, in combination, a coordination compound chosen from the group comprising palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, their hydrates and their mixtures, and cyanoethylcellulose, dissolved in dimethylformamide. If water is used as solvent, the polymeric resin will comprise, in combination, a coordination compound chosen from the group comprising copper acetate, nickel acetate, copper formate, nickel formate, their hydrates and mixtures thereof, and hydroxypropyl methylcellulose.

Suivant une forme de réalisation avantageuse de l'invention, les concentrations en composé de coordi¬ nation et en cyanoethylcellulose sont respectivement de 1.10"3 à 6.10"' mole et de 5 à 50 g par litre de diméthyl- formamide, la concentration en composé de coordination, par litre de dimethylformamide, lorsque le composé de coordination est de l'acétate de cuivre hydraté, étant de 2,5.10"' à 6.10"' mole et, lorsqu'il est de l'acétate de nickel, sa concentration est de 3,3.10"' mole.According to an advantageous embodiment of the invention, the concentrations of coordinating compound and of cyanoethylcellulose are respectively from 1.10 " to 6.10 " mol and from 5 to 50 g per liter of dimethylformamide, the concentration of compound coordination, per liter of dimethylformamide, when the compound of coordination is hydrated copper acetate, being 2.5.10 "'to 6.10 " ' mole and, when it is nickel acetate, its concentration is 3.3.10 "'mole.

Suivant une forme de réalisation particuliè- rement avantageuse de l'invention, les concentrations en composé de coordination et en cyanoethylcellulose, par litre de dimethylformamide, lorsque le composé de coordination est de l'acétate de palladium, sont respec¬ tivement de 1.10"3 à 3.10"' mole, avantageusement 9.10'2 mole et de 5 à 50 g, avantageusement de 10 g pour le dépôt de palladium catalytique, et de 8.10"2 à 3.1Ô"1 mole, avantageusement de 9.10"2 mole et de 20 à 50 g, avantageusement de 30 g pour le dépôt de palladium conducteur. Suivant une autre forme de réalisation avantageuse de l'invention, les concentrations en composé de coordination et en hydroxypropylméthylcellu- lose sont respectivement de 1.10"3 à 6.10"' mole et de 1 à 50 g par litre d'eau, ces concentrations, lorsque le composé de coordination est de l'acétate de cuivre hydraté, étant respectivement de 4.10"1 mole et 8 g par litre d'eau, et lorsque le composé de coordination est du formiate de cuivre, lesdites concentrations sont respectivement de 5,5.10*' mole et de 4 g par litre d'eau.According to a particularly advantageous embodiment of the invention, the concentrations of coordination compound and of cyanoethylcellulose, per liter of dimethylformamide, when the coordination compound is palladium acetate, are respectively 1.10 "3 at 3.10 "'mole, advantageously 9.10 ' 2 mole and from 5 to 50 g, advantageously 10 g for the deposition of catalytic palladium, and from 8.10 " 2 to 3.1Ô "1 mole, advantageously 9.10 " 2 mole and 20 at 50 g, advantageously 30 g for the deposition of conductive palladium. According to another advantageous embodiment of the invention, the concentrations of coordination compound and of hydroxypropyl methylcellulose are respectively from 1.10 "3 to 6.10 " mol and from 1 to 50 g per liter of water, these concentrations, when the coordination compound is hydrated copper acetate, being respectively 4.10 "1 mole and 8 g per liter of water, and when the coordination compound is of copper formate, said concentrations are respectively 5.5 × 10 * 'mole and 4 g per liter of water.

La présente invention concerne également l'utilisation de la résine polymérique au palladium, et plus particulièrement un procédé de dépôt de palladium sur la surface d'un substrat. Ce procédé est caractérisé en ce qu'il consiste à appliquer une fine couche de la résine précitée contenant le palladium à déposer sur la surface du substrat, à irradier la surface de ce subs¬ trat recouverte de cette fine couche de résine au moyen d-une source de lumière visible, ultraviolette ou infrarouge de manière à provoquer un dépôt de palladium sur la surface du substrat à l'endroit des zones irra- diées et à enlever la couche de résine non irradiée restante.The present invention also relates to the use of the palladium polymer resin, and more particularly to a process for depositing palladium on the surface of a substrate. This process is characterized in that it consists in applying a thin layer of the aforementioned resin containing the palladium to be deposited on the surface of the substrate, in irradiating the surface of this substrate covered with this thin layer of resin by means of- a source of visible, ultraviolet or infrared light so as to cause a deposit of palladium on the surface of the substrate at the location of the irra- and remove the remaining layer of unirradiated resin.

Suivant un autre mode de réalisation de l'invention, après avoir appliqué la fine couche de résine contenant le palladium sur la surface du subs¬ trat, on traite la surface de ce substrat recouverte de cette fine couche de résine par une source thermique de manière à provoquer un dépôt de palladium sur la surface du substrat. Suivant un mode de réalisation avantageux de l'invention, lorsque l'on utilise une source de lumière visible celle-ci est constituée par un laser à argon ionisé réglé dans le visible et, lorsque l'on utilise une source de lumière ultraviolette celle-ci est consti- tuée par un laser excimère puisé, une lampe ultravio¬ lette ou un laser à argon ionisé réglé dans l'ultravio¬ let.According to another embodiment of the invention, after having applied the thin layer of resin containing palladium to the surface of the substrate, the surface of this substrate covered with this thin layer of resin is treated by a thermal source so to cause a deposit of palladium on the surface of the substrate. According to an advantageous embodiment of the invention, when a visible light source is used, this is constituted by an ionized argon laser adjusted in the visible and, when an ultraviolet light source is used, this is this is made up of a pulsed excimer laser, an ultraviolet lamp or an ionized argon laser set in ultraviolet.

L'invention prévoit également un procédé de dépôt de cuivre ou de nickel sur la surface d'un subs- trat. Ce procédé est caractérisé en ce qu'il consiste à appliquer une fine couche de la résine polymérique contenant le cuivre ou le nickel à déposer sur la surface du substrat, à irradier la surface de ce subs¬ trat recouverte de cette fine couche de résine au moyen d'une source laser visible, ultraviolette ou infrarouge de manière à provoquer un dépôt de cuivre ou de nickel sur la surface du substrat à l'endroit des zones irra¬ diées et à enlever la couche de résine non irradiée restante. Avantageusement, on utilise comme source laser visible un laser à argon ionisé réglé dans le visible et comme source laser ultraviolette un laser excimère puisé ou un laser à argon ionisé réglé dans l'ultraviolet. Suivant un mode de réalisation particulière¬ ment avantageux de l'invention, on enlève la couche de résine non irradiée restante par trempage dans de l'acétonitrile et rinçage à l'eau, désionisée ou non et, dans le cas où le substrat est une matière céramique, on enlève cette couche de résine en plongeant le substrat pendant une durée d'environ 30 secondes à une minute dans une solution à 2 % d'acide fluorhydrique et 10 % de chlorure de sodium, en le rinçant à l'eau désionisée, en le plongeant pendant environ 5 minutes dans un bain d'acétonitrile à ultrasons et en le rinçant à nouveau à l'eau désionisée.The invention also provides a method of depositing copper or nickel on the surface of a substrate. This process is characterized in that it consists in applying a thin layer of the polymeric resin containing copper or nickel to be deposited on the surface of the substrate, in irradiating the surface of this subs¬ trat covered with this thin layer of resin in by means of a visible, ultraviolet or infrared laser source so as to cause a deposit of copper or nickel on the surface of the substrate at the location of the irradiated areas and to remove the remaining layer of non-irradiated resin. Advantageously, an ionized argon laser adjusted in the visible range is used as visible laser source and as an ultraviolet laser source a pulsed excimer laser or an ionized argon laser adjusted in the ultraviolet. According to a particularly advantageous embodiment of the invention, the layer of unirradiated resin remaining by soaking in acetonitrile and rinsing with water, deionized or not and, in the case where the substrate is a ceramic material, this layer of resin is removed by immersing the substrate for a period of approximately 30 seconds to one minute in a 2% solution of hydrofluoric acid and 10% sodium chloride, rinsing it with deionized water, immersing it for about 5 minutes in an ultrasonic acetonitrile bath and rinsing again with deionized water.

Suivant un mode de réalisation préféré de l'invention, on nettoie la surface du substrat avant d'y appliquer la couche de résine et, dans le cas où le substrat est une matière céramique, on nettoie la surface de celui-ci en le plongeant pendant environ 10 minutes dans une solution à 2 % d'acide fluorhydrique et 10 % de chlorure de sodium et ensuite en le rinçant à l'eau désionisée.According to a preferred embodiment of the invention, the surface of the substrate is cleaned before applying the resin layer thereto and, in the case where the substrate is a ceramic material, the surface of the latter is cleaned by immersing it for about 10 minutes in a 2% solution of hydrofluoric acid and 10% sodium chloride and then rinsing it with deionized water.

Enfin, dans le cas de la résine au palla- dium, l'invention concerne également un procédé de metallisation de la surface du substrat à traiter, suivant lequel, après l'enlèvement de la couche de résine non irradiée restante éventuelle (dans le cas de l'utilisation d'une source de lumière) , on plonge le substrat recouvert du dépôt de palladium dans un bain catalytique pour permettre le dépôt d'une couche de metallisation sur ce dépôt de palladium.Finally, in the case of palladium resin, the invention also relates to a method of metallization of the surface of the substrate to be treated, according to which, after the removal of the possible remaining layer of non-irradiated resin (in the case use of a light source), the substrate covered with the palladium deposit is immersed in a catalytic bath to allow the deposition of a metallization layer on this palladium deposit.

L'invention prévoit aussi, dans le cas de la résine au palladium, un procédé de metallisation directe du substrat, suivant lequel, après avoir appliqué la fine couche de résine contenant du palladium sur la surface dudit substrat, on sèche celle-ci et on plonge directement le substrat recouvert de cette résine dans un bain catalytique pour permettre le dépôt d'une couche de métal sur ledit substrat. D'autres détails et particularités de l'invention resεortiront de la description ci-après, à titre d'exemple non limitatif, de résines polymériques suivant l'invention, et de leurs applications pour le dépôt de palladium, cuivre et/ou nickel sur la surface de substrats et, dans certains cas, pour la metallisa¬ tion de ces surfaces.The invention also provides, in the case of palladium resin, a process for direct metallization of the substrate, according to which, after having applied the thin layer of resin containing palladium on the surface of said substrate, the latter is dried and directly immerses the substrate covered with this resin in a catalytic bath to allow the deposition of a layer of metal on said substrate. Other details and particularities of the invention will emerge from the description below, by way of nonlimiting example, of polymeric resins according to the invention, and of their applications for the deposition of palladium, copper and / or nickel on the surface of substrates and, in some cases, for the metallization of these surfaces.

Ainsi qu'on l'a déjà précisé précédemment, le but des résines polymériques de l'invention conεiεte à remplacer les solutions chloroformiques d'acétate de palladium connues jusqu'à présent, dont l'utilisation est limitée et dont l'inconvénient majeur est leur faible stabilité à la conservation (de l'ordre de 2 jours maximum) . Pour cela, on a développé des résines polymériques comprenant un composé de coordination combiné à de la cyanoethylcellulose ou de l'hydroxypro¬ pylmethylcellulose, en solution dans un solvant, le solvant utilisé étant soit le dimethylformamide lorsque la résine contient de la cyanoethylcellulose, soit l'eau lorsque la résine contient de l'hydroxypropylmethylcel¬ lulose. Ces résines polymériques présentent l'avantage de se décomposer aussi bien sous les rayonnements infrarouges et visibles que sous les rayonnements ultraviolets de faible puissance et de s'avérer extrê e- ment stables au stockage, pendant des durées minimales de deux mois et pouvant atteindre jusqu'à un an. Les composés de coordination sont choisis parmi l'acétate de palladium, l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, leurs hydra- tes et les mélanges d'au moins deux ou plusieurs de ces composés, l'acétate de palladium et ses hydrates n'étant toutefois pas utilisés lorsque la résine polymérique contient de l'hydroxypropylmethylcellulose et de l'eau comme solvant. La cyanoethylcellulose est un polymère de formule générale

Figure imgf000009_0001
dans laquelle n représente le degré de polymérisation. En fait, la cyanoéthylcellu- lose est une cellulose sur laquelle sont greffés des groupements cyanoéthyle. La nature polymérique du matériel de base, c'est-à-dire de la cellulose ne change pas, le degré de polymérisation de la cellulose n'étant pas modifié. D'excellents résultats ont été obtenus avec une cyanoethylcellulose d'un degré de substitution (nombre moyen de groupements cyanoéthyle venant se greffer sur la cellulose) de 2,5 à 3,0 et d'un degré de polymérisation (n) variant de 600 à 3000. Comme on vient de la préciser, le solvant, c'est-à-dire le dimethylformamide ou l'eau sera choisi en fonction du composé de coordination et de la matière cellulosique utilisés. C'est ainsi que dans le cas où la résine polymérique contient de la cyanoethylcellulose, le solvant sera le dimethylformamide, la cyanoethylcel¬ lulose étant en effet insoluble dans l'eau, et le composé de coordination sera l'acétate de palladium, l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, un de leurs hydrates ou un mélange de deux ou plusieurs de ces composés, et dans le cas où la résine polymérique contient de l'hydroxy¬ propylmethylcellulose, le solvant sera l'eau et le composé de coordination l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, un de leurs hydrates ou encore un mélange d'au moins deux de ces composés. Le fait que la qualité des dépôts métalliques sur le substrat n'est pas altérée tenterait à prouver que le solvant joue un rôle actif dans la composition de la résine. En ce qui concerne les concentrations en soluté, c'est-à-dire en composé de coordination et en cyanoethylcellulose ou hydroxypropylméthylcellulose de la résine polymérique, celles-ci dépendent bien entendu de la nature de ces composants et du solvant utilisé. Toutefois, on utilisera d'une manière générale, suivant l'invention, le composé de coordination et la cyano- éthylcellulose en des concentrations allant respective¬ ment de 1.10"3 à 6.10"' mole et de 5 à 50 g par litre de dimethylformamide. C'est ainsi que, par exemple, lorsque le composé de coordination est l'acétate de cuivre hydraté [Cu(Ac)2.H20] , sa concentration, par litre de dimethylformamide, sera de 2,5.10"' à 6.10"' mole, et de préférence de 2.10'1 mole. Lorsqu'on combine de l'acétate de nickel à la cyanoethylcellulose, leurs concentrations respectives seront d'environ 3,3.10'' mole et de 5 à 50 g par litre de dimethylformamide.As already stated above, the purpose of the polymer resins of the invention is to replace the chloroform solutions of palladium acetate known hitherto, the use of which is limited and the major drawback of which is their low stability during storage (around 2 days maximum). For this, polymeric resins have been developed comprising a coordination compound combined with cyanoethylcellulose or hydroxypro¬ pylmethylcellulose, in solution in a solvent, the solvent used being either dimethylformamide when the resin contains cyanoethylcellulose, or l water when the resin contains hydroxypropylmethylcel¬ lulose. These polymeric resins have the advantage of decomposing under infrared and visible radiation as well as under low power ultraviolet radiation and of being extremely stable in storage, for minimum periods of two months and up to up to 'at one year. The coordination compounds are chosen from palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, their hydra and mixtures of at least two or more of these compounds, palladium acetate and its hydrates, however, not being used when the polymeric resin contains hydroxypropylmethylcellulose and water as a solvent. Cyanoethylcellulose is a polymer of general formula
Figure imgf000009_0001
in which n represents the degree of polymerization. In fact, cyanoethylcellu- lose is a cellulose on which cyanoethyl groups are grafted. The polymeric nature of the basic material, that is to say cellulose, does not change, the degree of polymerization of the cellulose being unchanged. Excellent results have been obtained with a cyanoethylcellulose with a degree of substitution (average number of cyanoethyl groups grafted onto the cellulose) from 2.5 to 3.0 and with a degree of polymerization (n) varying from 600 at 3000. As we have just specified, the solvent, that is to say dimethylformamide or water, will be chosen according to the coordination compound and the cellulosic material used. Thus, in the case where the polymeric resin contains cyanoethylcellulose, the solvent will be dimethylformamide, cyanoethylcel¬ lulose being in fact insoluble in water, and the coordinating compound will be palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, one of their hydrates or a mixture of two or more of these compounds, and in the case where the polymeric resin contains hydroxypropylmethylcellulose , the solvent will be water and the coordination compound copper acetate, nickel acetate, copper formate, nickel formate, one of their hydrates or a mixture of at least two of these compounds . The fact that the quality of the metal deposits on the substrate is not impaired would try to prove that the solvent plays an active role in the composition of the resin. As regards the concentrations of solute, that is to say of coordination compound and of cyanoethylcellulose or hydroxypropylmethylcellulose of the polymeric resin, these naturally depend on the nature of these components and on the solvent used. However, in general, according to the invention, the coordination compound and the cyano- ethylcellulose in concentrations ranging respectively from 1.10 "3 to 6.10 " 'mole and from 5 to 50 g per liter of dimethylformamide. Thus, for example, when the coordinating compound is hydrated copper acetate [Cu (Ac) 2 .H 2 0], its concentration, per liter of dimethylformamide, will be 2.5.10 " 'to 6.10 " 'mole, and preferably 2.10 ' 1 mole. When combining nickel acetate with cyanoethylcellulose, their respective concentrations will be approximately 3.3.10 ' ' mole and 5 to 50 g per liter of dimethylformamide.

Dans certains cas, le type de dépôt métalli¬ que, à savoir catalytique ou conducteur, dépendra de la concentration en composé de coordination de la résine. C'est ainsi que dans le cas du palladium, lorsque l'on souhaite obtenir un dépôt de palladium conducteur, la concentration en acétate de palladium [Pd(Ac)2] pourrait être différente de celle utilisée lorsque l'on désire obtenir un dépôt de palladium catalytique. Le Tableau ci-après donne les gammes de concentration étendues et préférentielles en acétate de Pd et en cyanoethylcellu¬ lose par litre de dimethylformamide, selon que l'on désire obtenir un dépôt de palladium catalytique ou conducteur sur un substrat céramique.In certain cases, the type of metalli¬ deposit, that is to say catalytic or conductive, will depend on the concentration of coordination compound of the resin. Thus, in the case of palladium, when it is desired to obtain a deposit of conductive palladium, the concentration of palladium acetate [Pd (Ac) 2 ] could be different from that used when it is desired to obtain a deposit of catalytic palladium. The table below gives the extended and preferred concentration ranges of Pd acetate and cyanoethylcellulose per liter of dimethylformamide, depending on whether one wishes to obtain a deposit of catalytic or conductive palladium on a ceramic substrate.

TableauBoard

Gammes de concentrations de l'acétate de Pd et de la cyanoethylcellulose dans le DMFConcentration ranges of Pd acetate and cyanoethylcellulose in DMF

Figure imgf000011_0001
En fait, la résine de l'invention, de par sa nature polymérique, n'est pas un simple mélange mais bien une combinaison ou, plus particulièrement, un complexe des composants mis en présence. Des études de spectroscopie par infrarouge et de photoélectrons ont permis de prouver que l'on obtient une nouvelle molécu¬ le : en fait, lorsque l'on utilise les trois composants du Tableau précité, on obtient une nouvelle molécule par complexation du palladium avec le dimethylformamide et/ou la cyanoethylcellulose.
Figure imgf000011_0001
In fact, the resin of the invention, by its polymeric nature, is not a simple mixture but a combination or, more particularly, a complex of the components brought into contact. Infrared spectroscopy and photoelectron studies have shown that a new molecule is obtained: in fact, when the three components of the above table are used, a new molecule is obtained by complexation of palladium with the dimethylformamide and / or cyanoethylcellulose.

En ce qui concerne les résines polymériques contenant, en combinaison, un composé de coordination et de l'hydroxypropylmethylcellulose, les concentrations de ces constituants respectifs sont respectivement de 1.10"3 à 6.10"' mole et de 1 à 50 g par litre d'eau. Lorsque le composé de coordination est l'acétate de cuivre hydraté, les concentrations en acétate de cuivre hydraté et en hydroxypropylméthylcellulose sont avantageusement respectivement de 4.10"! mole et de 8 g par litre d'eau, et lorsque le composé de coordination est le formiate de cuivre, les concentrations en formiate de cuivre et hydroxypropylméthylcellulosesontrespectivementavanta¬ geusement de 5,5.10"' mole et de 4 g par litre d'eau.As regards the polymeric resins containing, in combination, a coordination compound and hydroxypropylmethylcellulose, the concentrations of these respective constituents are respectively from 1.10 "3 to 6.10"'mole and from 1 to 50 g per liter of water . When the coordinating compound is copper acetate hydrate, the concentrations of hydrated copper acetate and hydroxypropylmethylcellulose are preferably respectively 4.10 "! Mol and 8 g per liter of water, and when the coordination compound is formate copper, copper formate and hydroxypropyl methylcellulose concentrationsrespectively advantageously 5.5.10 " 'mole and 4 g per liter of water.

Suivant l'invention, comme déjà précisé précédemment, pour déposer le palladium, le cuivre ou le nickel sur la surface d'un substrat, on applique une fine couche de la résine polymérique de l'invention contenant le métal en question sur la surface du subs¬ trat, on irradie la surface de ce substrat recouverte de cette fine couche de résine au moyen d'une source de lumière visible, ultraviolette ou infrarouge dans le cas du palladium, ou au moyen d'une source laser visible, ultraviolette ou infrarouge dans le cas du cuivre et du nickel, de manière à provoquer un dépôt de palladium, cuivre ou nickel en fonction de la source utilisée, sur la surface du substrat à l'endroit des zones irradiées et on enlève la couche de résine non irradiée restante. On utilise de préférence pour appliquer la couche de résine polymérique sur la surface du substrat ou support la technique dite de revêtement par rotation ("spin- coating"). Cette technique de revêtement, bien connue des spécialistes, consiste à déposer le substrat ou support sur une tournette en le maintenant sur celle-ci par aspiration, par exemple au moyen d'une pompe à vide, à le couvrir du volume nécessaire de résine pour obtenir une couverture totale et ensuite à faire tourner la tournette tout en contrôlant son accélération, c'est-à- dire le nombre de tours par minute et par seconde pour atteindre la vitesse choisie, sa vitesse de rotation et le temps de rotation (temporisation) . Pour cela, on utilisera avantageusement des accélérations de 400 à 200 tours/minute/seconde, des vitesses de rotation de 200 à 1000 tours/minute et des temps de rotation allant de 60 à 99 secondes. On pourrait bien entendu utiliser d'autreε méthodes de revêtement, telles que, par exem- pie, une enduction au pinceau ou rouleau ou une immer¬ sion. La résine, étalée en couche mince sur le substrat sera alors exposée au rayonnement d'une source de lumière visible, ultraviolette ou infrarouge. Cette irradiation provoquera le dépôt de métal sur le subs- trat. Ainsi qu'on l'a déjà précisé précédemment, la nature de la résine polymérique de l'invention, contrai¬ rement aux solutions chloroformiques d'acétate de palladium, fera que l'on pourra utiliser une grande diversité de sources émettant dans le visible, l'ultra- violet ou l'infrarouge. Comme exemple de source visible on citera le laser à argon ionisé réglé dans le visible, d'une longueur d'onde de 454,5 nm à 528,7 nm, d'une puissance de 0,100 à 10 W et d'une vitesse d'écriture de 30 à 4000 μm/sec. et des exemples de sources ultravio- lettes sont le laser excimère puisé, d'une longueur d'onde de 248 nm, d'une énergie de 150 à 750 mJ/cm2 , d'un nombre d'impulsions de 3 à 70 et d'une fréquence de 10 à 50 Hz, les lampes ultraviolettes de longueur d'onde de 254 nm et de puissance de 5 à 100 W (durée d'irradia¬ tion de 2 heures à 48 heures) (uniquement pour le dépôt de palladium) et le laser à argon ionisé réglé dans l'ultraviolet.According to the invention, as already specified above, to deposit the palladium, copper or nickel on the surface of a substrate, a thin layer of the polymeric resin of the invention containing the metal in question is applied to the surface of the subs¬ trat, the surface of this substrate covered with this fine resin layer is irradiated by means of a visible, ultraviolet or infrared light source in the case of palladium, or by means of a visible, ultraviolet or infrared laser source in the case of copper and nickel, so as to cause a deposition of palladium, copper or nickel depending on the source used, on the surface of the substrate at the location of the irradiated areas and removing the remaining unirradiated resin layer. Preferably, the so-called spin-coating technique is used to apply the layer of polymeric resin to the surface of the substrate or support. This coating technique, well known to specialists, consists in depositing the substrate or support on a spinner by maintaining it thereon by suction, for example by means of a vacuum pump, to cover it with the necessary volume of resin for obtain total coverage and then rotate the spinner while controlling its acceleration, i.e. the number of revolutions per minute and per second to reach the chosen speed, its rotation speed and the rotation time (time delay ). For this, advantageously use accelerations of 400 to 200 revolutions / minute / second, rotation speeds of 200 to 1000 revolutions / minute and rotation times ranging from 60 to 99 seconds. It would of course be possible to use other coating methods, such as, for example, coating with a brush or roller or immersion. The resin, spread in a thin layer on the substrate will then be exposed to the radiation of a visible, ultraviolet or infrared light source. This irradiation will cause the deposition of metal on the substrate. As already specified above, the nature of the polymeric resin of the invention, unlike chloroform solutions of palladium acetate, will make it possible to use a wide variety of sources emitting in the visible , ultraviolet or infrared. As an example of a visible source, mention will be made of the ionized argon laser set in the visible range, with a wavelength from 454.5 nm to 528.7 nm, with a power of 0.100 to 10 W and a speed d '' writing from 30 to 4000 μm / sec. and examples of ultraviolet sources are the pulsed excimer laser, with a wavelength of 248 nm, with an energy of 150 to 750 mJ / cm 2 , with a number of pulses from 3 to 70 and a frequency from 10 to 50 Hz, ultraviolet lamps with a wavelength of 254 nm and a power of 5 to 100 W (irradiation duration of 2 hours to 48 hours) (only for palladium deposition) and the ionized argon laser set in the ultraviolet.

Si l'on désire, suivant l'invention, obtenir un dépôt métallique d'un dessin ou motif particulier sur la surface d'un substrat, on effectuera généralement l'irradiation au travers d'un masque contenant le dessin ou motif réalisé. Dans le cas d'une lampe ultraviolette, telle que celle représentée par la référence numérique 1 (figure 1) , le masque 2 contenant le dessin ou motif réalisé, soumis au rayonnement U.V. 3 sera en contact avec le substrat 4 (distance lampe-support/masque : de 0,5 à 1 cm). Dans le cas d'un laser excimère puisé, tel que celui représenté par la référence numérique 5 (figure 2) , le schéma d'écriture se fera en fait par projection au moyen d'un télescope, constitué par un jeu de lentilles 6 et 7 disposées entre le laser 5 et le masque 2, qui permet d'obtenir un faisceau parallèle 8 en fonction du choix de ces lentilles 6 et 7. 6 est une lentille plan concave, d'une focale de 100 mm et 7 une lentille plan convexe de 200 mm de focale. Par un réglage de la distance entre les lentilles 6 et 7, on peut obtenir un agrandissement du faisceau 8 sur une gamme allant de x 1,5 à x 5. Le masque 2 est constitué du dessin du circuit à dessiner sur le substrat 4 et est projeté sur ce dernier. La lentille 9, disposée entre le masque 2 et le substrat 4, permet la projection du motif du masque sur le substrat. Les masques utilisés dans le cadre des agencements de ces figures 1 et 2 sont à base de chrome sur quartz et sont en fait constitués d'une lame de quartz sur laquelle a été vaporisée une fine couche de chrome. Des masques, tels que de l'aluminium percé peuvent également être utilisés. La technologie du masquage utilisée à cet égard est en fait la même que celle utilisée dans la fabrication de circuits intégrés ou de VLSI (Very Large Scale Intégration, fabrication de circuits intégrés) . Pour l'écriture directe, on utilise- ra de préférence un laser à argon ionisé réglé dans le visible, tel que par exemple celui représenté par la référence numérique 10 sur la figure 3. On focalisera dans ce cas le faisceau laser 11 sur le substrat 4, grâce à la présence d'une lentille de projection 12. Le desεin ou motif souhaité est alors obtenu en déplaçant l'échantillon 4 par une table ou un système de tables X- Y (non représentéeε) pilotées par ordinateur. Sur les figures précitées, les éléments identiques ou analogues ont été désignés par les mêmes références. On peut bien entendu utiliser d'autres sources laser que celle susmentionnées, telles que les diodes laser ou encore les lasers YAG. En fait, le type de laser utilisé ne dépend pas de la nature du substrat mais plutôt de la nature de l'application. C'est ainsi que, par exemple, pour déposer du palladium catalytique sur de grandes surfaces sans dessin spécifique (de 60 μm2 à 2 mm2) (écriture par projection, voir figure 2) le laser excimère semble le mieux approprié. Par contre, pour déposer du palladium catalytique conducteur sur de petites surfaces et selon un dessin spécifique (traces de 5 μm de large), l'écriture directe du métal par le laser à argon ionisé convient mieux (voir figure 3) . Les lampes ultraviolettes quant à elles donnent une résolu¬ tion de quelques millimètres carrés ou permettant de couvrir de grandes surfaces du cm2 au m2 (voir figureIf it is desired, according to the invention, to obtain a metallic deposit of a particular design or pattern on the surface of a substrate, irradiation will generally be carried out through a mask containing the design or pattern produced. In the case of an ultraviolet lamp, such as that represented by the reference numeral 1 (FIG. 1), the mask 2 containing the design or pattern produced, subjected to UV radiation 3 will be in contact with the substrate 4 (distance from lamp to support / mask: 0.5 to 1 cm). In the case of a pulsed excimer laser, such as that represented by the reference numeral 5 (FIG. 2), the writing scheme will in fact be done by projection by means of a telescope, constituted by a set of lenses 6 and 7 arranged between the laser 5 and the mask 2, which makes it possible to obtain a parallel beam 8 depending on the choice of these lenses 6 and 7. 6 is a concave plane lens, with a focal length of 100 mm and 7 a plane lens convex 200 mm focal length. By adjusting the distance between the lenses 6 and 7, it is possible to obtain an enlargement of the beam 8 over a range going from x 1.5 to x 5. The mask 2 consists of the drawing of the circuit to be drawn on the substrate 4 and is projected onto the latter. The lens 9, arranged between the mask 2 and the substrate 4, allows the projection of the mask pattern on the substrate. The masks used within the framework of the arrangements of these FIGS. 1 and 2 are based on chromium on quartz and are in fact made up of a quartz blade on which a thin layer of chromium has been vaporized. Masks, such as pierced aluminum can also be used. Technology masking used in this regard is in fact the same as that used in the manufacture of integrated circuits or VLSI (Very Large Scale Integration, manufacture of integrated circuits). For direct writing, it is preferable to use an ionized argon laser adjusted in the visible, such as for example that represented by the reference numeral 10 in FIG. 3. In this case, the laser beam 11 will be focused on the substrate. 4, thanks to the presence of a projection lens 12. The desired design or pattern is then obtained by moving the sample 4 by a table or a system of X-Y tables (not shown) controlled by computer. In the above figures, identical or similar elements have been designated by the same references. It is of course possible to use other laser sources than that mentioned above, such as laser diodes or even YAG lasers. In fact, the type of laser used does not depend on the nature of the substrate but rather on the nature of the application. This is how, for example, to deposit catalytic palladium on large surfaces without specific drawing (from 60 μm 2 to 2 mm 2 ) (writing by projection, see FIG. 2) the excimer laser seems the most suitable. On the other hand, to deposit conductive catalytic palladium on small surfaces and according to a specific design (traces of 5 μm wide), the direct writing of the metal by the ionized argon laser is better (see Figure 3). Ultraviolet lamps, for their part, give a resolution of a few square millimeters or make it possible to cover large areas from cm 2 to m 2 (see figure

1).1).

Suivant une variante de l'invention, on peut également, dans le cas du dépôt de palladium, après l'application de la fine couche de résine polymérique au palladium sur la surface du substrat, traiter celle-ci par une source thermique pour provoquer un dépôt de palladium non sélectif sur la surface du substrat.According to a variant of the invention, it is also possible, in the case of the deposition of palladium, after the application of the thin layer of palladium polymeric resin on the surface of the substrate, treating it by a thermal source to cause a non-selective deposition of palladium on the surface of the substrate.

En fait si l'on compare les différentes sources pouvant être utilisées dans le cadre de 1'inven- tion, les sources laser sont préférables dans un grand nombre de cas car les avantages conférés par l'utilisa¬ tion des faisceaux laser sont la rapidité du processus (de 1 à 2 minutes), la sélectivité du dépôt (n'importe quel type de dessin peut être envisagé) et une grande résolution.In fact if we compare the different sources that can be used in the context of the invention, the laser sources are preferable in a large number of cases because the advantages conferred by the use of the laser beams are the speed of the process (from 1 to 2 minutes), the selectivity of the deposit (any type of drawing can be considered) and a high resolution.

L'invention prévoit également un procédé de metallisation de la surface du substrat ainsi traitée, c'est-à-dire au moyen d'une source de lumière ou thermi¬ que, suivant lequel, après l'enlèvement de la couche de résine polymérique au palladium non irradiée restante dans le cas de l'utilisation d'une source de lumière, on plonge le substrat recouvert du dépôt de palladium dans un bain catalytique pour permettre le dépôt d'une couche de metallisation sur ce dépôt de palladium. On pourrait aussi réaliser une metallisation directe, non spécifique de la surface du substrat à traiter, suivant laquelle, après l'application de la fine couche de résine polymé¬ rique au palladium sur cette surface, on sèche la fine couche de résine, de préférence à une température ne dépassant pas 80°C, avantageusement entre 60 et 70°C et on plonge directement le substrat dans un bain catalyti¬ que pour permettre le dépôt d'une couche de métal sur le substrat. Les bains catalytiques ou "electroless" et leurs modes de fonctionnement ont fait l'objet de brevets au nom de Shipley et d'un certain nombre de publications; voir notamment à cet égard P. Binda, J. Tweedie, J. Electroche . Soc. 130(5), 1112 (1983) et M. Paunovic, Plating Surf. Finish. 17 (1983) . Des métaux que l'on peut déposer par l'intermédiaire de ces bains catalytiques pour former la couche de metallisation sont notamment le cuivre et/ou le nickel. Des substrats utilisables dans le cadre de l'invention sont les matières céramiques, notamment celles utilisées pour la micro-électronique, les subs¬ trats polymériques, tels qu•époxydes, le verre, la silice, le quartz, les tissus et certains matériaux semi-conducteurs. En fait, compte tenu de la grande diversité de sources énergétiques utilisables, . il n'existe pratiquement aucune limitation quant à la nature des supports. Chacun de ceux-ci demande un pré- et post-traitement approprié. D'une manière générale, le prétraitement consiεte en un nettoyage de la surface du substrat avant d'y appliquer la couche de résine, à l'eau désionisée et à l'acétone technique et le post¬ traitement consiste à enlever la résine non irradiée par trempage dans de 1'acétonitrile et rinçage à l'eau, désionisée ou non. Les supports en céramique et les supports époxydes sont les seuls à nécessiter un traite¬ ment plus spécifique et notamment, comme on le verra dans les exemples d'application donnés ci-après concer- nant les supports en céramique, l'utilisation d'un bain d'acétonitrile à ultrasons.The invention also provides a method of metallizing the surface of the substrate thus treated, that is to say by means of a light or thermal source, according to which, after the removal of the layer of polymeric resin to the non-irradiated palladium remaining in the case of the use of a light source, the substrate covered with the palladium deposit is immersed in a catalytic bath to allow the deposition of a metallization layer on this palladium deposit. It would also be possible to carry out a direct, non-specific metallization of the surface of the substrate to be treated, according to which, after the application of the thin layer of palladium polymer resin on this surface, the thin layer of resin is dried, preferably at a temperature not exceeding 80 ° C, advantageously between 60 and 70 ° C and the substrate is immersed directly in a catalytic bath only to allow the deposition of a layer of metal on the substrate. The catalytic or "electroless" baths and their operating modes have been the subject of patents in the name of Shipley and of a certain number of publications; see in particular in this regard P. Binda, J. Tweedie, J. Electroche. Soc. 130 (5), 1112 (1983) and M. Paunovic, Plating Surf. Finish. 17 (1983). Metals which can be deposited via these catalytic baths to form the metallization layer are in particular copper and / or nickel. Substrates which can be used in the context of the invention are ceramic materials, in particular those used for microelectronics, polymeric substrates, such as epoxides, glass, silica, quartz, fabrics and certain semi-materials -conductors. In fact, given the great diversity of usable energy sources,. there is practically no limitation as to the nature of the supports. Each of these requires appropriate pre- and post-treatment. In general, the pretreatment consists of cleaning the surface of the substrate before applying the resin layer, with deionized water and technical acetone and the post-treatment consists in removing the non-irradiated resin. by soaking in acetonitrile and rinsing with water, deionized or not. The ceramic supports and the epoxy supports are the only ones to require a more specific treatment, and in particular, as will be seen in the application examples given below concerning the ceramic supports, the use of a ultrasonic acetonitrile bath.

EXEMPLESEXAMPLES

Exemple lExample l

Application de dépôt de palladium catalytique sur support céramique au moyen d'une résine à base d'acétate de palladium, de cyanoethylcellulose et de dimethylformamide comme solvantApplication of catalytic palladium deposition on a ceramic support using a resin based on palladium acetate, cyanoethylcellulose and dimethylformamide as solvent

On donne ci-après trois exemples d'applica¬ tion de dépôt de palladium catalytique sur support céramique, le premier par projection d'un rayonnement UV d'un laser excimère, le second par projection d'un rayonnement UV d'une lampe UV et le troisième par écriture directe au moyen d'un laser à argon ionisé. Hormis les conditions d'irradiation, les produits, leurs quantités et toutes les autres conditions de traitement sont identiques dans les trois exemples. Préparation de la réεine polymérique :Three examples of catalytic palladium deposition on ceramic support are given below, the first by projection of UV radiation from an excimer laser, the second by projection of UV radiation from a UV lamp. and the third by direct writing using an ionized argon laser. Except for the irradiation conditions, the products, their quantities and all the other processing conditions are identical in the three examples. Preparation of the polymeric resin:

Mélanger 9.10"2 mole d'acétate de palladium avec 7,5 à 10 g de cyanoethylcellulose, et mettre en solution dans 1 litre de dimethylformamide. Prétraitement des supports :Mix 9.10 "2 mole of palladium acetate with 7.5 to 10 g of cyanoethylcellulose, and dissolve in 1 liter of dimethylformamide. Pretreatment of the supports:

Les plonger 10 minutes dans une solution à 2 % d'acide fluorhydrique et 10 % de chlorure de sodium. Rincer à l'eau désionisée. Etalement de la résine : Disposer le support sur la tournette, couvrir ce dernier avec le volume nécessaire de résine pour obtenir une couverture totale. Faire tourner avec une accélération de 400 tours/minute/seconde, une vitesse de 900 tours/minute pendant 60 secondes. Sécher en étuve pour obtenir un film sec. Condition d'irradiation :Immerse them for 10 minutes in a 2% solution of hydrofluoric acid and 10% sodium chloride. Rinse with deionized water. Spreading the resin: Place the support on the spinner, cover the latter with the necessary volume of resin to obtain total coverage. Rotate with an acceleration of 400 rpm / second, a speed of 900 rpm for 60 seconds. Dry in an oven to obtain a dry film. Irradiation condition:

Laser excimère (montage optique suivant figure 2) : Longueur d'onde : 248 nm Energie : 450 mJ/cm2 Nombre d'impulsions : 70Excimer laser (optical assembly according to figure 2): Wavelength: 248 nm Energy: 450 mJ / cm 2 Number of pulses: 70

Fréquence : 10 Hz.Frequency: 10 Hz.

Lampe UV (montage optique suivant figure 1) : Longueur d'onde : 254 nm Puissance : 100 W Durée d'irradiation : 2 h 00UV lamp (optical assembly according to figure 1): Wavelength: 254 nm Power: 100 W Duration of irradiation: 2 h 00

Laser à argon ionisé (montage optique suivant figureIonized argon laser (optical assembly according to figure

3) :3):

Longueur d'onde : 514 nm Puissance : 0,100 W Vitesse d'écriture : 4000 μm/sec. Pos -traitement des supports :Wavelength: 514 nm Power: 0.100 W Writing speed: 4000 μm / sec. Sub-treatment of the supports:

Les plonger une minute dans une solution àImmerse them for one minute in a solution

2 % d'acide fluorhydrique et 10 % de chlorure de sodium, rincer à l'eau désionisée, laver dans un bain à ultra- sons rempli d'acétonitrile pendant 5 minutes, rincer à l'eau désionisée. Ces supports sont ensuite plongés danε des bains catalytiques (electrolesε) au cuivre ou au nickel pour déposer et faire croître sur les traces de palla¬ dium, respectivement du cuivre ou un alliage à base de nickel.2% hydrofluoric acid and 10% sodium chloride, rinse with deionized water, wash in an ultrasonic bath filled with acetonitrile for 5 minutes, rinse with deionized water. These supports are then immersed in catalytic baths (electrolesε) with copper or nickel to deposit and grow on the traces of palladium, respectively copper or a nickel-based alloy.

Ces bains catalytiques répondent aux carac¬ téristiques suivantes : Bains catalytiques au cuiyreThese catalytic baths meet the following characteristics: Catalytic baths with copper

Température du bain : entre 45 et 50°C. - source d'ions cuivre : sulfate de cuivre ou sel apparenté; 3 à 5 g/1 agent réducteur : formaldéhyde; 0,7 à 7 g/1 agent complexant : EDTA, acide gluconique, glucona- te, etc. ; 20 à 30 g/1 (excès) - agent de contrôle du pH : NaOH; pH = 10 à 13 additifs : stabilisantε, agents mouillants; 0,02 à 0,3 g/1. Bains catalytiques au nickelBath temperature: between 45 and 50 ° C. - source of copper ions: copper sulphate or related salt; 3 to 5 g / 1 reducing agent: formaldehyde; 0.7 to 7 g / 1 complexing agent: EDTA, gluconic acid, gluconate, etc. ; 20 to 30 g / 1 (excess) - pH control agent: NaOH; pH = 10 to 13 additives: stabilizer, wetting agents; 0.02 to 0.3 g / 1. Nickel catalytic baths

Les bains utiliεéε sont des bains qui déposent catalytiquement du nickel. Les ions nickel en solution aqueuse sont réduits par de 1'hypophosphite, ce qui produit non pas un dépôt de nickel mais un alliage de Ni-P contenant 12 à 13 % de phosphore en fonction du pH du bain. - Température du bain : entre 90 et 100°C source d'ions nickel : sulfate de nickel en solution aqueuse; 7,82 g/1 de sulfate de nickel agent réducteur : hypophosphite de sodium; 8,5 à 7,2 g/1 - agent complexant : acide glycolique; 20 à 30 g/1 agent de contrôle du pH : 4,7-5,1; H2S04 dilué additifs : stabilisants, agents mouillants, composés fluorés; 0,02 à 0,3 g/1. Exemple 2The baths used are baths which catalyze nickel. The nickel ions in aqueous solution are reduced by hypophosphite, which produces not a nickel deposit but an Ni-P alloy containing 12 to 13% of phosphorus depending on the pH of the bath. - Bath temperature: between 90 and 100 ° C source of nickel ions: nickel sulfate in aqueous solution; 7.82 g / 1 nickel sulfate reducing agent: sodium hypophosphite; 8.5 to 7.2 g / 1 - complexing agent: glycolic acid; 20 to 30 g / 1 pH control agent: 4.7-5.1; H 2 S0 4 diluted additives: stabilizers, wetting agents, fluorinated compounds; 0.02 to 0.3 g / 1. Example 2

Application de dépôt de cuivre sur divers supports au moyen de résines aqueuses à base d'acétate de cuivre hydraté ou de formiate de cuivre et d'hydroxypropylméthylcellulose. a) Résine au cuivre composée d'acétate de cuivre hydraté [Cu(C02CH3)2.H20; 4.10"' mole] et d'hydroxy¬ propylméthylcellulose (8 g/litre) avec de l'eau comme solvant. Des essais d'écriture directe (mon- tage optique de la figure 3 du dessin annexé) sont effectués sur du verre recouvert d'une fine couche de cette résine. Les meilleurs résultats sont obtenus avec le laser Spectra-Physics, modèle 2045, à une longueur d'onde de 457,9 nm (ouverture du diaphragme de sortie de 12) avec un objectif de focalisation de 18 μm d'ouverture. Sur le verre, à une vitesse d'écriture de 3500 μm/s et une puissance d'irradiation de 150 mW, on obtient des résistances de l'ordre de quelques dizaines de kΩ après net- toyage de la résine non irradiée. Ces traces sont toujours conductrices après traitement à l'HCl, traitement qui a pour but d'éliminer les oxydes éventuels. b) Résine aqueuse constituée de formiate de cuivre [Cu(HC02)2] 0,55 molaire etd'hydroxypropylméthylcel¬ lulose à 4 g/1. On obtient de bons résultats avec le laser Spectra-Physics, modèle 2016, à 488 nm et avec un objectif de focalisation de 18 μm d'ouverture. Sur l'époxy comme support, une vitesse d'écriture de 3000 à 4000 μm/s et une puissance de 50 mW, donnent des résistances de quelques dizaines de kΩ. Sur le polyi ide, la première optimisation des résultats dans les conditions précitées amène à une vitesse de balayage de 1500 μm/s et une puissance laser de 50 mW. La mesure de la résistance avant et après nettoyage de la résine est du même ordre de grandeur (kΩ) , ce qui laisεe supposer une très bonne adhéren¬ ce.Application of copper deposition on various supports using aqueous resins based on hydrated copper acetate or copper formate and hydroxypropylmethylcellulose. a) Copper resin composed of hydrated copper acetate [Cu (C0 2 CH 3 ) 2 .H 2 0; 4.10 " 'mole] and of hydroxy¬ propylmethylcellulose (8 g / liter) with water as solvent. Direct writing tests (optical assembly of FIG. 3 of the attached drawing) are carried out on coated glass of a thin layer of this resin. The best results are obtained with the Spectra-Physics laser, model 2045, at a wavelength of 457.9 nm (aperture of the output diaphragm of 12) with a focusing objective of 18 μm opening. On the glass, at a writing speed of 3500 μm / s and an irradiation power of 150 mW, resistances of the order of a few tens of kΩ are obtained after cleaning the resin not irradiated These traces are always conductive after treatment with HCl, treatment which aims to remove any oxides b) Aqueous resin consisting of copper formate [Cu (HC0 2 ) 2 ] 0.55 molar etd hydroxypropyl methylcellululose at 4 g / l. Good results are obtained with the Spectra-Physics laser, mo dele 2016, at 488 nm and with a focusing objective of 18 μm aperture. On the epoxy as support, a writing speed of 3000 to 4000 μm / s and a power of 50 mW, give resistances of a few tens of kΩ. On the polyide, the first optimization of the results under the aforementioned conditions leads to a scanning speed of 1500 μm / s and a laser power of 50 mW. The measurement of the resistance before and after cleaning the resin is of the same order of magnitude (kΩ), which suggests very good adhesion.

Ces nouvelles résines se préparent par mélange comme indiqué dans l'Exemple 1 et sont étalées comme expliqué dans le même Exemple 1.These new resins are prepared by mixing as indicated in Example 1 and are spread as explained in the same Example 1.

Exemple comparatifComparative example

Utilisation d'une résine à base d'acétate de palladium, d'ethylcellulose et de dimethylformamideUse of a resin based on palladium acetate, ethylcellulose and dimethylformamide

On prépare une résine identique à celle de l'Exemple 1, mais en remplaçant la cyanoethylcellulose par de 1'ethylcellulose. On l'étalé par rotation sur de la céramique prétraitée comme dans l'Exemple 1. Une métalliεation directe de la surface du substrat cérami¬ que à traiter, après séchage de la couche de résine à une température de 65°C et trempage direct du substrat céramique dans un bain catalytique, ne peut pas être obtenue, la résine se dispersant dans le bain catalyti¬ que qui est ainsi irrémédiablement pollué. Le substrat n'est pas métallisé. De plus, cette résine n'est utili- sable que pendant 24 heures, car passé ce délai on observe un précipité de palladium métallique sur les parois du récipient.A resin identical to that of Example 1 is prepared, but replacing the cyanoethylcellulose by ethylcellulose. It is spread by rotation on pre-treated ceramic as in Example 1. Direct metallization of the surface of the ceramic substrate to be treated, after drying of the resin layer at a temperature of 65 ° C and direct soaking of the ceramic substrate in a catalytic bath, cannot be obtained, the resin dispersing in the catalytic bath which is thus irreparably polluted. The substrate is not metallized. In addition, this resin can only be used for 24 hours, because after this time a precipitate of metallic palladium is observed on the walls of the container.

On en concluera donc que le choix du dérivé cellulosique de la résine polymérique est extrêmement important en fonction des résultats obtenus, et que l'on ne peut pas remplacer la cyanoethylcellulose pour les résines ayant le dimethylformamide comme solvant et l'hydroxypropylmethylcellulose pour les résines ayant l'eau comme solvant, par d'autres dérivés cellulosiques, tels que, par exemple, 1'ethylcellulose.It will therefore be concluded that the choice of the cellulose derivative of the polymeric resin is extremely important according to the results obtained, and that one cannot replace cyanoethylcellulose for resins having dimethylformamide as solvent and hydroxypropylmethylcellulose for resins having water as solvent, by other cellulose derivatives, such as, for example, ethylcellulose.

Exemple 3 Metallisation directe de substrats céramiques et époxydes a) Metallisation directe de céramiσueε : La résine utilisée dans ce cas est identique à celle utilisée dans l'Exemple 1, de même que le prétraitement des supports et l'étalement de la résine. Une céramique ainsi traitée est plongée dans un bain catalytique au cuivre et une autre dans un bain cataly¬ tique au nickel. Après 5 minutes, les substrats recou- verts de cuivre ou de nickel (2 μm) sont retirés des bains, rincés à l'eau et séchés (papier essuie-tout) . Les dépôts métalliques obtenus sont conducteurs et adhérents (30 N/cm) . b) Metallisation directe d'époxydes : La résine utilisée dans ce cas est également identique à celle de l'Exemple 1, le prétraitement des supports époxydes se faisant suivant la procédure proposée par Shipley, cette méthode consistant à faire passer les supports dans quatre bains de prétraitement différents, avec un rinçage abondant à l'eau entre chacun des bains. Ces bains sont constitués par des solutions de conditionnement et/ou de nettoyage bien connues des spécialistes, le second bain étant notamment constitué de KMn04 à 60 g/litre. Ce prétraitement a pour but de nettoyer et de décaper la surface de l'époxyde afin de rendre adhérentes les couches métalliques de cuivre et de nickel. L'étalement de la résine se fait également comme indiqué dans le cadre de l'Exemple 1. Un substrat époxyde ainsi traité est plongé dans un bain catalytique au cuivre et un autre dans un bain catalyti¬ que au nickel. Après 5 minutes, les substrats recouverts de cuivre ou de nickel (2 μl) sont retirés des bains, rincés à l'eau et séchés (papier essuie-tout) . Les dépôts métalliques obtenus sont conducteurs et adhérents (30 N/cm) .Example 3 Direct metallization of ceramic substrates and epoxides a) Direct metallization of ceramics: The resin used in this case is identical to that used in Example 1, as is the pretreatment of the supports and spreading of the resin. One ceramic thus treated is immersed in a copper catalytic bath and another in a nickel catalytic bath. After 5 minutes, the substrates covered with copper or nickel (2 μm) are removed from the baths, rinsed with water and dried (paper towel). The metallic deposits obtained are conductive and adherent (30 N / cm). b) Direct metallization of epoxides: The resin used in this case is also identical to that of Example 1, the pretreatment of the epoxy supports being carried out according to the procedure proposed by Shipley, this method consisting in passing the supports through four baths different pretreatment, with abundant rinsing with water between each bath. These baths are made up of packaging and / or cleaning solutions well known to specialists, the second bath being in particular made up of KMn0 4 at 60 g / liter. The purpose of this pretreatment is to clean and strip the surface of the epoxy in order to adhere the metallic layers of copper and nickel. The spreading of the resin is also done as indicated in the context of Example 1. An epoxy substrate thus treated is immersed in a catalytic bath with copper and another in a catalytic bath with nickel. After 5 minutes, the substrates covered with copper or nickel (2 μl) are removed from the baths, rinsed with water and dried (paper towel). The metallic deposits obtained are conductive and adherent (30 N / cm).

Suite aux études spectroscopiques qui ont été réalisées, il apparaît que les résines polymériques de l'invention sont de nouveaux complexes. Dans le cas plus spécifique des solutions d'acétate de palladium et de cyanoethylcellulose, cette dernière améliore non seulement la qualité des dépôts et la sélectivité de ceux-ci maiε donne lieu auεsi à une viscosité modulable, formant un film polymérique après l'étape de revêtement par rotation ou "spin-coating". La cyanoethylcellulose ajoutée aux solutionε d'acétate de palladium ne doit pas absorber la radiation incidente (c'est-à-dire qu'elle doit être transparente aux UV) . D'autre part, elle doit être soluble dans des solvants de l'acétate de palla¬ dium. C'est le cas d'autres solvantε, telε que le chloroforme. Toutefois, la résine organométallique de palladium n'est stable que dans le dimethylformamide. Par contre, dans le chloroforme, après plusieurε heures, il y a précipitation d'un miroir de palladium métalli¬ que. Lorsque la résine est constituée d'ethylcellulose (plutôt que de cyanoethylcellulose) , le même type de dépôt d'un miroir de palladium métallique a été observé après 24 heures. D'autre part, avec le PVC comme polymè¬ re, aucun dépôt métallique n'a pu être observé après irradiation souε lampes UV. Dès lors, les résultats obtenuε avec la cyanoethylcellulose montrent que ce polymère ne joue pas un simple rôle d'agent régulateur de la viscoεité. Il interviendrait également au niveau de la décompoεition photochimique de l'acétate de palladium d'une part et de la stabilité de la résine d'autre part. De plus, outre le fait que les résines de l'invention permettent d'effectuer des dépôts métalli¬ ques sélectifs, elles ne demandent pas de traitement thermique préalable, contrairement aux solutions ou suspensions polymériques des documents de brevet préci¬ tés. En outre, l'étape des bains catalytiques n'est pas obligatoire.Following the spectroscopic studies which have been carried out, it appears that the polymeric resins of the invention are new complexes. In the more specific case of solutions of palladium acetate and cyanoethylcellulose, the latter not only improves the quality of the deposits and the selectivity of these may give rise to a modular viscosity, forming a polymeric film after the step of coating by rotation or "spin-coating". The cyanoethylcellulose added to the solutions of palladium acetate must not absorb the incident radiation (that is to say, it must be transparent to UV). On the other hand, it must be soluble in solvents of palladium acetate. This is the case with other solvents, such as chloroform. However, the organometallic palladium resin is only stable in dimethylformamide. On the other hand, in chloroform, after several hours, there is precipitation of a mirror of metallic palladium. When the resin consists of ethylcellulose (rather than cyanoethylcellulose), the same type of deposit of a metallic palladium mirror was observed after 24 hours. On the other hand, with PVC as a polymer, no metallic deposit could be observed after irradiation under UV lamps. Consequently, the results obtained with cyanoethylcellulose show that this polymer does not play a simple role of agent regulating the viscosity. It would also be involved in the photochemical decomposition of palladium acetate on the one hand and the stability of the resin on the other hand. In addition, in addition to the fact that the resins of the invention make it possible to carry out selective metalli¬ cial deposits, they do not require prior heat treatment, unlike the polymer solutions or suspensions of the above-mentioned patent documents. Furthermore, the catalytic bath stage is not compulsory.

Il doit être entendu que la présente inven¬ tion n'est en aucune façon limitée aux formes de réali¬ sation décrites ci-dessus et que bien des modifications peuvent y être apportées sans sortir du cadre du présent brevet. It should be understood that the present invention is in no way limited to the forms of embodiment described above and that many modifications can be made without departing from the scope of this patent.

Claims

REVENDICATIONS 1. Résine polymérique, en particulier pour le dépôt de métal sur un substrat, caractérisée en ce qu'elle comprend, en combinaison, un composé de coordi- nation choisi dans le groupe comprenant l'acétate de palladium, l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, leurs hydra¬ tes et leurs mélanges, et de la cyanoethylcellulose, en solution dans du dimethylformamide. 1. Polymeric resin, in particular for depositing metal on a substrate, characterized in that it comprises, in combination, a coordinating compound chosen from the group comprising palladium acetate, copper acetate, nickel acetate, copper formate, nickel formate, their hydra¬ and their mixtures, and cyanoethylcellulose, dissolved in dimethylformamide. 2. Résine polymérique, en particulier pour le dépôt de métal sur un substrat, caractérisée en ce qu'elle comprend, en combinaison, un composé de coordi¬ nation choisi dans le groupe comprenant l'acétate de cuivre, l'acétate de nickel, le formiate de cuivre, le formiate de nickel, leurs hydrates et leurs mélanges, et de l'hydroxypropylmethylcellulose, en solution dans de l'eau.2. Polymeric resin, in particular for depositing metal on a substrate, characterized in that it comprises, in combination, a coordinating compound chosen from the group comprising copper acetate, nickel acetate, copper formate, nickel formate, their hydrates and mixtures, and hydroxypropylmethylcellulose, in solution in water. 3. Résine suivant la revendication 1, caractérisée en ce que la cyanoethylcellulose répond à la formule générale (Ct5H1905Ν3).., dans laquelle n repré¬ sente le degré de polymérisation et varie de 600 à 3000.3. Resin according to claim 1, characterized in that the cyanoethylcellulose corresponds to the general formula (C t5 H 19 0 5 Ν 3 ) .., in which n represents the degree of polymerization and varies from 600 to 3000. 4. Résine suivant l'une ou l'autre des revendications 1 et 3, caractérisée en ce que les concentrations en composé de coordination et en cyanoé- thylcellulose sont respectivement de 1.10"3 à 6.10'' mole et de 5 à 50 g par litre de dimethylformamide.4. Resin according to either of claims 1 and 3, characterized in that the concentrations of coordination compound and of cyanoethylcellulose are respectively from 1.10 "3 to 6.10 ' ' mole and from 5 to 50 g per liter of dimethylformamide. 5. Résine suivant la revendication 4, caractérisée en ce que le composé de coordination est l'acétate de cuivre hydraté et sa concentration est de 2,5.10"' à 6.10"' mole par litre de dimethylformamide.5. Resin according to claim 4, characterized in that the coordinating compound is hydrated copper acetate and its concentration is 2.5.10 "to 6.10" 'mole per liter of dimethylformamide. 6. Résine suivant la revendication 4, caractérisée en ce que le composé de coordination est l'acétate de nickel et sa concentration est de 3,3.10"' mole par litre de dimethylformamide. 6. Resin according to claim 4, characterized in that the coordinating compound is nickel acetate and its concentration is 3.3.10 " 'mole per liter of dimethylformamide. 7. Résine suivant l'une ou l'autre des revendications 1 et 3, pour le dépôt de palladium catalytique, caractérisée en ce que -Le composé de coordination est l'acétate de palladium et sa concentra¬ tion, par litre de dimethylformamide, est de 1.10"3 à 3.10'' mole et de préférence de 9.10"2 mole. 7. Resin according to either of Claims 1 and 3, for the deposition of palladium catalytic, characterized in that -The coordinating compound is palladium acetate and its concentration, per liter of dimethylformamide, is 1.10 "3 to 3.10 ' ' mole and preferably 9.10" 2 mole. 8. Résine suivant la revendication 7, caractérisée en ce que la concentration en cyanoethyl¬ cellulose, par litre de dimethylformamide, est de 5 à 50 g et de préférence de 10 g.8. Resin according to claim 7, characterized in that the concentration of cyanoethyl¬ cellulose, per liter of dimethylformamide, is from 5 to 50 g and preferably from 10 g. 9. Résine suivant l'une ou l'autre des revendications 1 et 3, pour le dépôt de palladium conducteur, caractérisée en ce que le composé de coordi¬ nation est l'acétate de palladium et sa concentration, par litre de dimethylformamide, est de 8.10"2 à 3.10"' mole et de préférence de 9.10'2 mole. 9. Resin according to either of Claims 1 and 3, for the deposition of conductive palladium, characterized in that the coordi¬ nation compound is palladium acetate and its concentration, per liter of dimethylformamide, is from 8.10 "2 to 3.10 " 'mole and preferably from 9.10 ' 2 mole. 10. Résine suivant la revendication 9, caractérisée en ce que la concentration en cyanoethyl¬ cellulose, par litre de dimethylformamide, est de 20 à 50 g et de préférence de 30 g.10. Resin according to claim 9, characterized in that the concentration of cyanoethyl¬ cellulose, per liter of dimethylformamide, is from 20 to 50 g and preferably from 30 g. 11. Résine suivant la revendication 2, caractérisée en ce que les concentrations en composé de coordination et en hydroxypropylméthylcellulose sont respectivement de 1.10"3 à 6.10"' mole et de 1 à 50 g par litre d'eau.11. Resin according to claim 2, characterized in that the concentrations of coordination compound and of hydroxypropyl methylcellulose are respectively from 1.10 " to 6.10 " mole and from 1 to 50 g per liter of water. 12. Résine suivant la revendication 11, caractérisée en ce que le composé de coordination est l'acétate de cuivre hydraté et les concentrations en acétate de cuivre hydraté et hydroxypropylméthylcellu¬ lose sont respectivement de 4.10"' mole et 8 g par litre d'eau. 12. Resin according to claim 11, characterized in that the coordinating compound is hydrated copper acetate and the concentrations of hydrated copper acetate and hydroxypropyl methylcellu¬ lose are respectively 4.10 " mol and 8 g per liter of water . 13. Résine suivant la revendication 11, caractérisée en ce que le composé de coordination est le formiate de cuivre et les concentrations en formiate de cuivre et hydroxypropylméthylcellulose sont respective¬ ment de 5,5.10"' mole et de 4 g par litre d'eau. 13. Resin according to claim 11, characterized in that the coordination compound is copper formate and the concentrations of copper formate and hydroxypropylmethylcellulose are respectively 5.5.10 " mole and 4 g per liter of water . 14. Procédé de dépôt de palladium sur la surface d'un substrat, caractérisé en ce qu'il consiste à appliquer une fine couche de la résine contenant le palladium suivant l'une quelconque des revendications 1, 3, 4 et 7 à 10, sur la surface dudit substrat, à irra¬ dier la surface de ce substrat recouverte de cette fine couche de résine au moyen d'une source de lumière visible, ultraviolette ou infrarouge de manière à provoquer un dépôt de palladium sur la surface du substrat à l'endroit des zones irradiées et à enlever la couche de résine non irradiée restante. 14. A method of depositing palladium on the surface of a substrate, characterized in that it consists applying a thin layer of the resin containing the palladium according to any one of claims 1, 3, 4 and 7 to 10, on the surface of said substrate, irradiating the surface of this substrate covered with this thin layer of resin by means of a visible, ultraviolet or infrared light source so as to cause a deposit of palladium on the surface of the substrate at the location of the irradiated areas and to remove the remaining layer of non-irradiated resin. 15. Procédé de metallisation de la surface du substrat suivant la revendication 14, caractérisé en ce qu'après l'enlèvement de la couche de résine non irradiée restante, on plonge le substrat recouvert du dépôt de palladium dans un bain catalytique pour permet- tre le dépôt d'une couche de metallisation sur ce dépôt de palladium.15. A method of metallizing the surface of the substrate according to claim 14, characterized in that after the removal of the remaining layer of non-irradiated resin, the substrate covered with the palladium deposit is immersed in a catalytic bath to allow depositing a metallization layer on this palladium deposit. 16. Procédé de dépôt, de palladium sur la surface d'un substrat, caractérisé en ce qu'il consiste à appliquer une fine couche de la résine contenant le palladium suivant l'une quelconque des revendications 1, 3, 4 et 7 à 10, sur la surface dudit substrat et à traiter la surface de ce substrat recouverte de cette fine couche de résine par une source thermique de manière à provoquer un dépôt de palladium sur la surface du substrat.16. A method of depositing palladium on the surface of a substrate, characterized in that it consists in applying a thin layer of the resin containing the palladium according to any one of claims 1, 3, 4 and 7 to 10 , on the surface of said substrate and to treat the surface of this substrate covered with this thin layer of resin by a thermal source so as to cause a deposit of palladium on the surface of the substrate. 17. Procédé de metallisation de la surface du substrat suivant la revendication 16, caractérisé en ce qu'on plonge le substrat recouvert du dépôt de palladium dans un bain catalytique pour permettre le dépôt d'une couche de metallisation sur ce dépôt de palladium.17. A method of metallizing the surface of the substrate according to claim 16, characterized in that the substrate covered with the palladium deposit is immersed in a catalytic bath to allow the deposition of a metallization layer on this palladium deposit. 18. Procédé de metallisation de la surface d'un substrat, caractérisé en ce qu'il consiste à appliquer une fine couche de la résine contenant du palladium suivant l'une quelconque des revendications 1, 3, 4 et 7 à 10, sur la surface dudit substrat, à sécher la fine couche de résine appliquée et à plonger le substrat recouvert de cette résine dans un bain cataly¬ tique pour permettre le dépôt d'une couche de métal sur ledit substrat. 18. A method of metallizing the surface of a substrate, characterized in that it consists in applying a thin layer of the resin containing palladium according to any one of claims 1, 3, 4 and 7 to 10, on the surface of said substrate, to be dried the thin layer of resin applied and immersing the substrate covered with this resin in a catalytic bath to allow the deposition of a layer of metal on said substrate. 19. Procédé suivant la revendication 18, caractérisé en ce que l'on sèche la fine couche de résine à une température ne dépassant pas 80°C, se situant de préférence entre 60 et 70°C.19. The method of claim 18, characterized in that the thin layer of resin is dried at a temperature not exceeding 80 ° C, preferably between 60 and 70 ° C. 20. Procédé suivant l'une quelconque des revendications 15 et 17 à 19, caractérisé en ce que la couche de metallisation est formée de cuivre et/ou de nickel.20. Method according to any one of claims 15 and 17 to 19, characterized in that the metallization layer is formed of copper and / or nickel. 21. Procédé suivant l'une quelconque des revendications 14 à 20, caractérisé en ce que la résine utilisée est formée d'acétate de palladium et de cyanoe¬ thylcellulose en solution dans du dimethylformamide.21. Method according to any one of claims 14 to 20, characterized in that the resin used is formed from palladium acetate and cyanoe¬ thylcellulose in solution in dimethylformamide. 22. Procédé suivant la revendication 21, caractérisé en ce que les concentrations en acétate de palladium et cyanoethylcellulose sont respectivement de l'ordre de 9.10'2 mole et de 7,5 à 10 g par litre de dimethylformamide.22. The method of claim 21, characterized in that the concentrations of palladium acetate and cyanoethylcellulose are respectively of the order of 9.10 '2 mole and 7.5 to 10 g per liter of dimethylformamide. 23. Procédé de dépôt de cuivre sur la surface d'un substrat, caractérisé en ce qu'il consiste à appliquer une fine couche de la résine contenant le cuivre suivant l'une quelconque des revendications 1 à 5, 11 et 12, sur la surface dudit substrat, à irradier la surface de ce substrat recouverte de cette fine couche de résine au moyen d'une source laser visible, ultraviolette ou infrarouge de manière à provoquer un dépôt de cuivre sur la surface du substrat à l'endroit des zones irradiées et à enlever la couche de résine non irradiée restante.23. A method of depositing copper on the surface of a substrate, characterized in that it consists in applying a thin layer of the resin containing the copper according to any one of claims 1 to 5, 11 and 12, on the surface of said substrate, to irradiate the surface of this substrate covered with this thin layer of resin by means of a visible, ultraviolet or infrared laser source so as to cause a deposit of copper on the surface of the substrate at the location of the irradiated areas and removing the remaining unirradiated resin layer. 24. Procédé de dépôt de nickel sur la surface d'un substrat, caractérisé en ce qu'il consiste à appliquer une fine couche de la résine contenant le nickel suivant l'une quelconque des revendications l à 4, 6, 11 et 13, sur la surface dudit subεtrat, à irra¬ dier la surface de ce substrat recouverte de cette fine couche de résine au moyen d'une source laser visible, ultraviolette ou infrarouge de manière à provoquer un dépôt de nickel sur la surface du substrat. à l'endroit des zones irradiées et à enlever la couche de résine non irradiée restante.24. A method of depositing nickel on the surface of a substrate, characterized in that it consists in applying a thin layer of the resin containing the nickel according to any one of claims l to 4, 6, 11 and 13, on the surface of said substrate, to irradiate the surface of this substrate covered with this thin layer of resin by means of a visible laser source, ultraviolet or infrared so as to cause a deposit of nickel on the surface of the substrate. at the location of the irradiated areas and to remove the remaining non-irradiated resin layer. 25. Procédé suivant l'une quelconque des revendication 14 à 24, caractérisé en ce que la couche de résine est appliquée sur la surface du substrat par la technique dite de revêtement par rotation.25. A method according to any one of claims 14 to 24, characterized in that the resin layer is applied to the surface of the substrate by the so-called rotational coating technique. 26. Procédé suivant l'une quelconque des revendications 14, 15 et 20 à 24, caractérisé en ce qu'on utilise comme source de lumière ou laser un laser à argon ionisé réglé dans le visible.26. A method according to any one of claims 14, 15 and 20 to 24, characterized in that one uses as a light source or laser an ionized argon laser adjusted in the visible. 27. Procédé suivant l'une quelconque des revendications 14, 15 et 20 à 24, caractérisé en ce qu'on utilise comme source de lumière ou laser ultravio¬ lette un laser excimère puisé ou un laser à argon ionisé réglé dans l'ultraviolet.27. Method according to any one of claims 14, 15 and 20 to 24, characterized in that a pulsed excimer laser or an ionized argon laser adjusted in the ultraviolet is used as the light source or ultraviolet laser. 28. Procédé suivant l'une quelconque des revendications 14, 15 et 20 à 22, caractérisé en ce qu'on utilise comme source de lumière ultraviolette une lampe ultraviolette. 28. Method according to any one of claims 14, 15 and 20 to 22, characterized in that an ultraviolet lamp is used as the ultraviolet light source. 29. Procédé suivant l'une ou l'autre des revendications 27 et 28, caractérisé en ce qu'on réalise l'irradiation au travers d'un masque pour obtenir un dépôt de métal d'un dessin ou motif particulier sur la surface du substrat. 29. Method according to either of claims 27 and 28, characterized in that the irradiation is carried out through a mask to obtain a deposit of metal of a particular design or pattern on the surface of the substrate. 30. Procédé suivant l'une quelconque des revendications 14 à 29, caractérisé en ce que le subs¬ trat est une matière céramique, une matière polymérique telle qu'un êpoxyde, du verre, de la silice, du quartz, un tissu ou un matériau semi-conducteur. 30. Method according to any one of claims 14 to 29, characterized in that the substrate is a ceramic material, a polymeric material such as an epoxide, glass, silica, quartz, a fabric or a semiconductor material. 31. Procédé suivant l'une quelconque des revendications 14 à 30, caractérisé en ce qu'on nettoie la surface du substrat avant d'y appliquer la couche de résine.31. Method according to any one of claims 14 to 30, characterized in that it cleans the surface of the substrate before applying the resin layer. 32. Procédé suivant la revendication 31, caractérisé en ce que le substrat est une matière céramique et en ce qu'on nettoie la surface de celui-ci en le plongeant pendant environ 10 minutes dans une solution à 2 % d'acide fluorhydrique et 10 % de chlorure de sodium et ensuite en le rinçant à l'eau désioniεée.32. Process according to claim 31, characterized in that the substrate is a ceramic material and in that the surface of the latter is cleaned by immersing it for approximately 10 minutes in a 2% solution of hydrofluoric acid and 10 % sodium chloride and then rinsing it with deionized water. 33. Procédé suivant l'une quelconque des revendications 14, 15 et 20 à 32, caractérisé en ce qu'on enlève la couche de résine non irradiée restante par trempage dans de l'acétone et rinçage à l'eau, désionisée ou non.33. Process according to any one of claims 14, 15 and 20 to 32, characterized in that the remaining layer of non-irradiated resin is removed by soaking in acetone and rinsing with water, deionized or not. 34. Procédé suivant l'une quelconque des revendications 14, 15 et 20 à 32, caractérisé en ce que le substrat est une matière céramique et en ce qu'on enlève la couche de résine non irradiée restante en plongeant ledit substrat pendant une durée de 1'ordre de 30 secondes à 1 minute dans une solution à 2 % d'acide fluorhydrique et 10 % de chlorure de sodium, en le rinçant à l'eau désionisée, en le plongeant pendant environ 5 minutes dans un bain d'acétonitrile à ultra¬ sons et en le rinçant à nouveau à l'eau désionisée. 34. Method according to any one of claims 14, 15 and 20 to 32, characterized in that the substrate is a ceramic material and in that the remaining layer of unirradiated resin is removed by immersing said substrate for a period of 1'order from 30 seconds to 1 minute in a solution of 2% hydrofluoric acid and 10% sodium chloride, rinsing it with deionized water, immersing it for about 5 minutes in an acetonitrile bath at ultrasound and rinsing it again with deionized water.
PCT/BE1992/000053 1991-12-11 1992-12-10 Polymeric resin, in particular for depositing metal on a substrate, and use thereof Ceased WO1993012267A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91870202.8 1991-12-11
EP91870202 1991-12-11

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WO1995018879A1 (en) * 1994-01-05 1995-07-13 Blue Chips Holding Polymeric resin for depositing catalytic palladium on a substrate
RU2301846C2 (en) * 2003-01-03 2007-06-27 Семика С.А. Light-sensitive dispersion of adjustable viscosity for application of metal coat on insulating substrate and use of such dispersion

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995018879A1 (en) * 1994-01-05 1995-07-13 Blue Chips Holding Polymeric resin for depositing catalytic palladium on a substrate
BE1007879A3 (en) * 1994-01-05 1995-11-07 Blue Chips Holding Polymer resin viscosity adjustable for filing on palladium catalyst substrate, method of preparation and use.
AU676417B2 (en) * 1994-01-05 1997-03-06 Semika S.A. Polymeric resin for depositing catalytic palladium on a substrate
US5685898A (en) * 1994-01-05 1997-11-11 Blue Chips Holding Polymeric resin of adjustable viscosity and pH for depositing catalytic palladium on a substrate
CN1049020C (en) * 1994-01-05 2000-02-02 蓝片控股公司 Polymeric resin for depositing catalytic palladium on a substrate
JP3417947B2 (en) 1994-01-05 2003-06-16 ブルー チップス ホールディング Polymeric resins for depositing catalytic palladium on supports
RU2301846C2 (en) * 2003-01-03 2007-06-27 Семика С.А. Light-sensitive dispersion of adjustable viscosity for application of metal coat on insulating substrate and use of such dispersion

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