WO1993002351A1 - Method of and device for measuring water content - Google Patents
Method of and device for measuring water content Download PDFInfo
- Publication number
- WO1993002351A1 WO1993002351A1 PCT/JP1992/000912 JP9200912W WO9302351A1 WO 1993002351 A1 WO1993002351 A1 WO 1993002351A1 JP 9200912 W JP9200912 W JP 9200912W WO 9302351 A1 WO9302351 A1 WO 9302351A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- water
- sample
- adsorbed
- chemical solution
- amount
- Prior art date
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 27
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 11
- 239000003814 drug Substances 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- 229940079593 drug Drugs 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004334 fluoridation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/06—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid
Definitions
- the present invention relates to a method and an apparatus for measuring a water content. For example, the amount of water adsorbed on various material surfaces, such as the amount of water adsorbed on thin film surfaces such as silicon film and silicon oxide film formed on the inner surface of highly clean electrolytic polishing pipes and the amount of water adsorbed on metal surfaces
- the present invention also relates to a method and apparatus for measuring the amount of water which can be used to determine the amount of water adsorbed on various wafers and the amount of water adsorbed on the inner surface of a semiconductor manufacturing apparatus.
- the method using APIMS requires several hours until the water molecules adsorbed on the inner surface of the sample are completely desorbed and the water concentration in the carrier gas returns to the original value.
- high-speed measurement is not possible, and there is a limit in measuring high water concentration.
- An object of the present invention is to provide a method and a device for measuring the amount of moisture that can measure moisture adsorbed on various samples with high accuracy and in a short time. Disclosure of the invention
- the first gist of the present invention is that a chemical solution having solubility in water is brought into contact with a sample so that the water adsorbed on the surface of the mi sample itself is absorbed by the chemical solution, and then the electrical conductivity of the chemical solution is reduced.
- ⁇ is the measurement of water content.
- the second gist is that it has an R container for storing a chemical solution having solubility for 7j, a sample chamber or a sample itself, and an electric conductivity meter, and further has a flow rate of the chemical solution in the shelf container.
- FIG. 1 is a chemical solution storage container
- 2 is a chemical liquid flow rate control means
- 3 is a leak-type electric conductivity meter
- 1 and 2 are reference tubes for keeping the inside of the electric conductivity meter sensor cell super-clean. is there.
- Reference numeral 13 denotes a sample tube in which various inner surfaces are prepared and water is adsorbed. Open valves 4 and 5 and add a high-purity inert gas (eg,
- valves 8 and 9 are opened, and the chemicals are sent to the electric conductivity meter 3 via the reference pipe 12 by closing the valves 10 and 11 where the electric conductivity of the chemicals is measured.
- the electric conductivity reaches a constant value, close valves 8 and 9 and open 10 and 11 to introduce the chemical into sample tube 13 and dissolve the adsorbed water in the sample tube.
- anhydrous hydrogen fluoride is used for water.
- anhydrous hydrogen fluoride about 6 N of industrial anhydrous hydrogen fluoride can be used, but for the measurement of trace water, a purity of 9 N or more obtained by repeatedly purifying industrial anhydrous hydrogen fluoride by distillation or the like is used. More preferably, the water content is 4 O ppb or less, and the electrical conductivity is 1. O xl 0 "° S / cm or less.
- the electrical conductivity meter 3 is preferably one 1 0 one 7-electrical conductivity in the range of 1 0- 2 S Roh cm can be measured, in particular Inrain type electric conductivity ⁇ total hermetic attachable to the pipe is preferred .
- the means for supplying anhydrous hydrogen fluoride to the sample consists of a piping system surrounding the anhydrous hydrogen fluoride storage container and the sample, and the means for sending anhydrous hydrogen fluoride from the sample to the conductivity meter is the sample. And a piping system that mirrors the conductivity meter.
- various metals and alloys can be used because anhydrous hydrogen fluoride does not corrode metals.
- plastic such as Teflon, etc.
- stainless steel which has low adsorption of impurity gas, has high property, and has an inner surface subjected to a passivation treatment after electrolytic polishing.
- the boiling point of anhydrous hydrogen fluoride is 19.5 ° C, so the piping system, flow control means, and electric conductivity meter sensor cell through which hydrogen fluoride liquid normally flows must be It is desirable to keep the temperature below 19.5 ° C, for example, 0 ° C. Further, the hydrogen fluoride discharged from the electric conductivity meter 3 is collected in a closed container cooled, for example, to about ⁇ 10 to about 130.
- FIG. 1 is a conceptual diagram showing one configuration example of a moisture measuring device of the present invention.
- Figure 2 is a graph showing the change over time in the electrical conductivity of the drug solution after the drug solution was introduced into the sample tube.
- Fig. 3 is a graph showing the relationship between the moisture concentration in hydrogen fluoride and the electrical conductivity.
- Figure 4 shows the aging time after the introduction of anhydrous hydrogen fluoride into the sample tube of Example 1 (oxidation passivated stainless steel tube equilibrated with Ar gas of water content l OOO ppb). 4 is a graph showing a relationship between electric conductivity of hydrogen.
- Fig. 1 is a conceptual diagram showing one configuration example of a moisture measuring device of the present invention.
- Figure 2 is a graph showing the change over time in the electrical conductivity of the drug solution after the drug solution was introduced into the sample tube.
- Fig. 3 is a graph showing the relationship between the moisture concentration in hydrogen fluoride and the electrical conductivity.
- Figure 4 shows the aging time after the introduction
- Example 5 is a graph showing the relationship between the time elapsed after the introduction of anhydrous hydrogen fluoride into the sample tube of Example 2 (electrolytic polishing tube with Sio on its inner surface) and the electrical conductivity of anhydrous hydrogen fluoride. .
- ⁇ ⁇ ⁇ pipe
- EP electrolytic polishing tube
- 0 P oxidation passivated tube.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Sampling And Sample Adjustment (AREA)
Description
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/182,109 US5504009A (en) | 1991-07-16 | 1994-01-14 | Method of and device for measuring water content |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3201422A JP3037790B2 (ja) | 1991-07-16 | 1991-07-16 | 水分量の測定方法及び測定装置 |
| JP3/201422 | 1991-07-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1993002351A1 true WO1993002351A1 (en) | 1993-02-04 |
Family
ID=16440819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1992/000912 WO1993002351A1 (en) | 1991-07-16 | 1992-07-16 | Method of and device for measuring water content |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5504009A (ja) |
| EP (1) | EP0594853A4 (ja) |
| JP (1) | JP3037790B2 (ja) |
| WO (1) | WO1993002351A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3418703B2 (ja) * | 1993-08-04 | 2003-06-23 | 財団法人国際科学振興財団 | 試料表面処理機能を有する水分量測定装置 |
| DE10015004A1 (de) | 2000-03-25 | 2001-09-27 | Clariant Gmbh | Schwarze Tris-Azo-Metall-Komplex-Farbstoffe |
| RU2181700C2 (ru) * | 2000-07-11 | 2002-04-27 | Вологодский государственный технический университет | Способ фторирования воды |
| US20040209373A1 (en) * | 2001-11-26 | 2004-10-21 | Dexsil Corporation | Method and apparatus for the determination of water in materials |
| US10551367B2 (en) | 2015-06-25 | 2020-02-04 | Saudi Arabian Oil Company | Geochemical water analysis element concentration prediction for oilfield waters |
| US11168534B2 (en) | 2019-11-06 | 2021-11-09 | Saudi Arabian Oil Company | Downhole crossflow containment tool |
| CN112595758A (zh) * | 2020-11-09 | 2021-04-02 | 中核四0四有限公司 | 一种适用于无水氟化氢中水分含量的测量装置 |
| CN116678920A (zh) * | 2023-04-20 | 2023-09-01 | 兴国兴氟化工有限公司 | 一种氢氟酸生产过程中混酸含水率的在线检测方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54143197A (en) * | 1978-04-28 | 1979-11-08 | Nippon Carbide Kogyo Kk | Device for measuring moisture content of solid sample |
| JPS63182565A (ja) * | 1987-01-23 | 1988-07-27 | Matsushita Electric Ind Co Ltd | 磁気記録媒体の吸着水分量の測定方法 |
| JPH032660A (ja) * | 1989-05-31 | 1991-01-09 | Ngk Insulators Ltd | セラミック焼結体の水分量の測定方法及びその装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3222292A (en) * | 1962-06-08 | 1965-12-07 | American Cyanamid Co | Composition for the detection of moisture in polar organic liquids |
| US3243674A (en) * | 1963-02-01 | 1966-03-29 | Ebert Gotthold | Capacitor type sensing device |
| US3354057A (en) * | 1963-09-27 | 1967-11-21 | Allied Chem | Method and apparatus for determination of water in liquid ammonia |
| SE8403682L (sv) * | 1984-07-12 | 1986-01-13 | Bozena Olsson | Reagens for bestemning av vattenahlten i en produkt samt anvendning av reagenset |
| US4975249A (en) * | 1987-07-27 | 1990-12-04 | Elliott Stanley B | Optical and capacitance type, phase transition, humidity-responsive devices |
| JPH02164402A (ja) * | 1988-12-19 | 1990-06-25 | Toshiba Corp | 水分捕集サンプラ |
| NO173757C (no) * | 1991-08-15 | 1994-01-26 | Dydahl Bjoern | Vaeskeproeveanalysator |
-
1991
- 1991-07-16 JP JP3201422A patent/JP3037790B2/ja not_active Expired - Fee Related
-
1992
- 1992-07-16 WO PCT/JP1992/000912 patent/WO1993002351A1/ja not_active Application Discontinuation
- 1992-07-16 EP EP92915840A patent/EP0594853A4/en not_active Withdrawn
-
1994
- 1994-01-14 US US08/182,109 patent/US5504009A/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54143197A (en) * | 1978-04-28 | 1979-11-08 | Nippon Carbide Kogyo Kk | Device for measuring moisture content of solid sample |
| JPS63182565A (ja) * | 1987-01-23 | 1988-07-27 | Matsushita Electric Ind Co Ltd | 磁気記録媒体の吸着水分量の測定方法 |
| JPH032660A (ja) * | 1989-05-31 | 1991-01-09 | Ngk Insulators Ltd | セラミック焼結体の水分量の測定方法及びその装置 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP0594853A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3037790B2 (ja) | 2000-05-08 |
| EP0594853A1 (en) | 1994-05-04 |
| US5504009A (en) | 1996-04-02 |
| EP0594853A4 (en) | 1995-05-31 |
| JPH0526830A (ja) | 1993-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Schrader | Wettability of clean metal surfaces | |
| EP0354669B1 (en) | Dry etching apparatus with anhydrous hydrogen fluoride gas generator | |
| US5480677A (en) | Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith | |
| CN112189006B (zh) | 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法 | |
| JPH06128099A (ja) | 処理装置 | |
| US6964187B2 (en) | Vacuum sensor | |
| US6174740B1 (en) | Method for analyzing impurities within silicon wafer | |
| WO1993002351A1 (en) | Method of and device for measuring water content | |
| TW200531180A (en) | Purging of a wafer conveyance container | |
| JPH05125518A (ja) | 不動態膜の形成方法 | |
| CN113484403B (zh) | 一种半导体制造用气体分散部件表面痕量元素污染的测试方法 | |
| JP2001153854A5 (ja) | ||
| CN117907412A (zh) | 一种hdpe包装材料物洁净度测试方法 | |
| US5294280A (en) | Gas measuring device and processing apparatus provided with the gas measuring device | |
| Ohmi et al. | New technique for the measurement of adsorbed moisture concentration on a solid surface | |
| JP2004109072A (ja) | 液中の金属不純物分析方法 | |
| JP3418703B2 (ja) | 試料表面処理機能を有する水分量測定装置 | |
| US20010025524A1 (en) | Method of evaluating adsorption of contaminant on solid surface | |
| JP2002148156A (ja) | 金属不純物のサンプリング容器 | |
| JPH04333570A (ja) | Hfガスによる窒化珪素のクリーニング方法 | |
| WO2005036135A1 (ja) | 半導体処理装置の石英製品の検査方法及び検査補助デバイス | |
| JP7586091B2 (ja) | 質量分析計によるハロゲンフッ化物含有ガス中のフッ素ガス濃度の測定方法 | |
| US6684721B2 (en) | Method and apparatus for preparing a liquid sample | |
| Chopra et al. | An optical method for monitoring metal contamination during aqueous processing of silicon wafers | |
| JPH0513345A (ja) | 処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): KR US |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU MC NL SE |
|
| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 08182109 Country of ref document: US |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 1992915840 Country of ref document: EP |
|
| WWP | Wipo information: published in national office |
Ref document number: 1992915840 Country of ref document: EP |
|
| WWW | Wipo information: withdrawn in national office |
Ref document number: 1992915840 Country of ref document: EP |