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WO1991005888A1 - Installation de gravure et proceder pour graver des objets - Google Patents

Installation de gravure et proceder pour graver des objets Download PDF

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Publication number
WO1991005888A1
WO1991005888A1 PCT/EP1990/001636 EP9001636W WO9105888A1 WO 1991005888 A1 WO1991005888 A1 WO 1991005888A1 EP 9001636 W EP9001636 W EP 9001636W WO 9105888 A1 WO9105888 A1 WO 9105888A1
Authority
WO
WIPO (PCT)
Prior art keywords
etchant
etching
density
metal
electrolysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1990/001636
Other languages
German (de)
English (en)
Inventor
Rainer Haas
Willi Beyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hans Hollmueller Maschinenbau & Co GmbH
Original Assignee
Hans Hollmueller Maschinenbau & Co GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hans Hollmueller Maschinenbau & Co GmbH filed Critical Hans Hollmueller Maschinenbau & Co GmbH
Publication of WO1991005888A1 publication Critical patent/WO1991005888A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068—Apparatus for etching printed circuits

Definitions

  • the invention relates to an etching system, in particular for the production of electronic circuit boards, with a) an etching machine in which the objects to be etched are exposed to an etching agent which etches metal from the objects and thereby accumulates with metal; b) an electrolysis cell containing a bleaching current source, which can be supplied with etching agent enriched with metal and in which the etching agent is depleted by electrolytic deposition of the metal and can then be fed back to the etching machine if required; c) a density control device with a density meter, which monitors the density of the etchant in the electrolysis cell, activates it when a specific density value is exceeded and deactivates when it falls below a specific density value.
  • the invention also relates to a method for etching objects, in particular for the production of electronic circuit boards, in which the objects are exposed to an etchant which is enriched with metal through the etching process and is again depleted of metal for regeneration in an electrolysis process, the electrolysis process is alternately activated and deactivated to regulate the density of the depleted etchant.
  • etching systems and methods for etching are known in practice.
  • the deactivation of the elec trolysis cell to interrupt the electrolysis process a certain problem: the current that flows through the electrolysis cell cannot simply be switched off, since otherwise the etching agent would chemically etch back the metal deposited on the electrodes of the electrolysis cell.
  • the known etching systems and the known methods therefore work in such a way that the electrolysis cell is divided into an electrolysis chamber and a collecting container below the electrolysis chamber. The separation electrodes are located in the electrolysis chamber; the actual electrolysis process takes place here. Should the electrolysis be interrupted because, for example, the desired one
  • Electrolysis chamber drained into the collecting container. This avoids that the etchant with the metal to the during the breaks in the electrolysis cells
  • Electrodes comes into contact.
  • the etchant located in the collecting container is then pumped back into the electrolysis chamber, where the electrolysis process then begins again under the influence of the voltage applied to the electrodes.
  • the filling or emptying of the electrolysis chamber associated with the activation or deactivation of the electrolysis cell is, however, associated with a considerable expenditure of time.
  • control processes have a considerable time delay, that is to say that the density of the depleted etching agent available on the electrolysis cell fluctuates within relatively wide limits. This was acceptable in the past, when the precision of the etching process was not so demanding.
  • the density of the etchant plays a crucial role.
  • the object of the present invention is to design an etching system of the type mentioned at the outset in such a way that the control fluctuations to which the density of the etchant is subjected in the etching machine can be kept as low as possible.
  • the current emitted by the direct current source optionally has a rest value at which the electrolytic deposition of the metal on the electrodes and the chemical etching back of the metal from the electrodes roughly balance one another, or a work value which the electrodeposition predominates, may have; e) the density meter of the electrolysis cell controls the direct current source in such a way that it emits the rest value at a density value below a certain limit value and the work value above a certain limit value.
  • the electrolysis cell is no longer drained for deactivation. Instead, the one in the
  • This idle value is measured such that the electrolytic deposition effect and the etch-back effect of the etchant are roughly balanced, so that the concentration of the etchant in the electrolytic cell is no longer changed.
  • the idle value is about 120 A. The switching of the current provided in the electrolysis cell according to the invention can be done very quickly, so it is no longer mechanical
  • the rest value of the current supplied by the direct current source should be such that the electrolytic deposition of the metal slightly exceeds the chemical etching back from the electrodes.
  • the electrolysis cell is thus also operated in the phases of the deactivation in such a way that the density of the etchant contained in it decreases at most slightly, but can never increase.
  • the density meter of the electrolytic cell is constantly flowed through by depleted etchant which flows from the outlet of the electrolytic cell to its inlet. There is therefore a constant circulation of the etchant via the density meter, so that the density meter always indicates the current value of the density of the depleted etchant emerging from the electrolysis cell.
  • a particularly simple and inexpensive way of switching the operating current from the working to the idle value consists in the fact that the direct current source contains a servomotor which is controlled by the density meter of the electrolytic cell and the tap of a variable transformer with variable output voltage is moved. This also makes it particularly easy to regulate fluctuations in the mains voltage and current fluctuations which are based on temperature changes in the etchant in the electrolysis chamber. Of course, it is also possible to control the electronic system
  • the return of depleted etchant to the etching machine was based on the density of the etchant in the electrolytic cell. So that the density of the etchant in the etching machine could not drop too much in this mode of operation, a further density meter was provided, which monitored the density of the etchant in the etching machine. When falling below a certain
  • the density of the electrolysis cell was stopped in the manner described above by draining the etchant into a collecting container.
  • This mutual intermingling of the control processes in the etching machine on the one hand and the electrolysis cell on the other hand also proves to be relatively sluggish.
  • the etching machine is therefore assigned its own density control device with its own density meter, through which the etchant located in the sump of the etching machine can flow continuously and if a certain density value is exceeded, the removal of enriched etchant to the electrolytic cell and the return of a corresponding amount of depleted etchant releases the electrolytic cell to the etching machine.
  • the electrolysis cell is simply understood as a source of depleted etchant of a certain density;
  • the regulation of the electrolysis cell takes place in itself and independently of the regulation of the density of the etchant in the etching machine.
  • the volumes of the etchant, which have to be moved in the control processes or have to be influenced by the electrolysis are comparatively small, which results in small control fluctuations.
  • a buffer tank is preferably provided which communicates with the sump of the etching machine and from which the etchant flowing through the density meter of the etching machine is removed. In principle, it would be possible without further ado to remove this etchant directly from the sump of the etching machine. However, such a buffer tank can already be found in most of the common etching machines and can therefore also be used in the manner described to remove the etchant required for density measurement.
  • the corresponding measuring devices and additional units are then particularly easily accessible.
  • the etchant supplied to the electrolytic cell be removed from the buffer tank.
  • etchant can be removed from the buffer tank, which is returned to the etching machine via one or more injectors in which it is enriched with gaseous or vaporous substances.
  • gaseous or vaporous substance is ammonia, as must be frequently added to the etchant when etching copper. It is particularly simple if a single pump is provided for removing etchant from the buffer tank for the various purposes (flow through the density meter, supply of etchant to the electrolytic cell, enrichment of the etchant in injectors).
  • Electrolysis cells are customary which have an overflow serving as an outlet and a collecting container serving as an inlet, from which the etchant can be pumped into the electrolysis chamber, with the same amount of etchant emerging via the outlet in which etchant enters the inlet. Electrolysis cells of this type have the particular advantage that the amount of etchant contained in them is automatically always constant: what is supplied at the inlet exits - depleted - again.
  • the level sensor now closes the solenoid valve in the path between the overflow and the collecting container, so that the level can now also rise in the overflow of the electrolysis cell. A corresponding amount of etchant can emerge from the overflow and be fed to the etching machine, for example. As soon as the level in the collecting container has returned to the original value, the solenoid valve is opened again and the etchant moves within the electrolytic cell again in a closed circuit.
  • Another object of the invention is to design a method of the type mentioned at the outset in such a way that the density of the etchant can be kept within narrow control fluctuations.
  • This object is achieved according to the invention in that the current flowing in the electrolysis process for deactivation is reduced from a work value at which the electrolytic deposition of metal significantly exceeds the chemical etching back to a rest value at which the electrolytic deposition roughly equals the chemical etching back holds or only slightly exceeds this.
  • the reference numeral 1 is an etching measure machine shown, which is known according to its basic structure. Your description can therefore be kept brief.
  • the etching machine 1 comprises an input station 2, in which the printed circuit boards 3 to be etched are placed on a roller conveyor system 4. On this, they are continuously guided in the direction of arrow 5 into the actual etching chamber 6, through this and possibly through downstream processing stations (not shown in the drawing).
  • nozzle sticks 7 and 8 above and below the path of movement of the printed circuit boards, to which pumps 9 and 10 are continuously fed etching agents.
  • the nozzle assemblies 7 and S spray the printed circuit boards 3 carried past with etchant, which then collects in the sump 11 of the etching machine 1. There it is sucked in again by the pumps 9 and 10 and again in the
  • the etchant is enriched with copper, which is etched away from the printed circuit boards 3.
  • An electrolysis cell is provided for the regeneration of the etchant, that is to say for the depletion of copper, which is identified overall by reference number 11. This too
  • the basic structure of an electrolytic cell is known. It comprises the actual electrolysis chamber 14, in which a plurality of plate-shaped electrodes 12 are arranged parallel to one another and on which the copper to be removed from the etchant is deposited.
  • the electrodes 12 are alternately connected to the positive or negative pole of a direct current source 13, which will be discussed in more detail below.
  • a collecting container 15 into which the etchant located in the electrolysis chamber 14 can be drained if required (as will be explained in more detail below). Also in those operating times in which the electrolysis chamber 14 is filled with etchant, there is etchant in the collecting container 15 at a certain level, which is monitored by a level sensor 16.
  • a pump 17 continuously removes etchant from the sump of the collecting container 15 and circulates it via filters 18, 19, which are preceded by valves 20, 21, for cleaning. Above all, however, the pump 17 continuously introduces etchant from the bottom of the collecting container 15 into the electrolysis chamber 14 from below; a corresponding amount of etchant emerges in an overflow 22 in the upper region of the electrolysis chamber 14. This overflow 22 is connected via a line 23 to the sump of the etching machine 1.
  • the solenoid valve 25 is controlled by the level sensor 16 already mentioned above, which monitors the etchant level in the collecting container 15. Details of the control process are explained below.
  • the density meter 26 acts on a servomotor 27 in the direct current source 13, which in turn is able to actuate a variable transformer 28 within the direct current source 13.
  • the variable voltage output by the actuating transformer 28 is rectified by a rectifier 29 and then applied to the rectifier 29 in the manner already indicated above
  • the sump of the etching machine 1 is connected to a buffer tank 31 via a line 30.
  • a pump 32 continuously removes etchant from the buffer tank 31 and directs it back into the sump of the etching machine 1 via a filter 33 and injectors 34 and 35.
  • gaseous additives in particular NH 3 , are added to the circulating etchant in a known manner.
  • the etchant removed from the buffer tank 31 by the pump 32 is also passed through a pH meter 36, from which it returns to the buffer tank 31.
  • the pH meter 36 can regulate the addition of ammonia, for example, by acting on a solenoid valve 37.
  • Another portion of the etchant is circulated by the pump 32 via a second density meter 38, from which it flows back into the buffer tank 31.
  • the etchant removed from the pump 32 from the buffer tank 31 can be introduced into the collecting container 15 of the electrolytic cell 11 via a line 39 in which a solenoid valve 40 is located.
  • the solenoid valve 40 is controlled by the density meter 38.
  • the circuit boards 3 to be etched are introduced by the roller conveyor system 4 from the input station 2 into the etching chamber 6 of the etching machine 1 and are sprayed there with etchant through the nozzle assemblies 7 and 8.
  • the conductor tracks on the printed circuit boards 3 are etched out in the desired manner; the copper-enriched etchant collects in the sump of the etching machine 1 and is then circulated again by the pumps 9 and 10 via the nozzle assemblies 7 and 8.
  • the composition of the etchant in the sump of the etching machine 1 essentially corresponds to the composition of the etchant in the buffer tank 31.
  • the composition of this etchant is continuously checked by the pH meter 36 and by the density meter 38, that of the circulated by the pump 32 Etching agents are flowed through.
  • the pump 32 also serves, as already mentioned, to add gaseous additives, in particular ammonia, by circulating the etchant between the sump of the etching machine 1 and the buffer tank via the injectors 34 and 35.
  • the density meter 38 determines that the density of the etchant in the buffer tank 31 and thus also in the sump of the etching machine 1 is below a predetermined value, it remains in the essentially closed etchant circuit between the sump of the etching machine 1, the buffer tank 31, and the pump 32, the filter 33 and the injectors 34 and 35. Only when the density meter 38 determines an increase in the copper content in the etchant above the predetermined value, the solenoid valve 40 is opened. The pump 32 now conveys etchant from the buffer tank 31 via the line 39 into the collecting container 15 of the electrolytic cell 11.
  • the solenoid valve 25 which is able to establish a direct connection between the overflow 22 and the collecting container 15 of the electrolytic cell 11, was open. Therefore, the level in the overflow 22 of the electrolytic cell 11 could never rise so high that etchant returned from the overflow 22 of the electrolytic cell 11 via the line 23 to the etching machine 1. However, if, as described, the level in the collecting container 15 rises as a result of the supply of (copper-enriched) etchant via the line 39, the level sensor 16 emits a signal which closes the solenoid valve 25. The previously essentially closed circuit of the etchant in the electrolysis cell 11 between the collecting container 15, the pump 17, the electrolysis chamber 14 and the overflow 22 of the electrolysis cell 11 is now interrupted (the relatively low throughput of
  • Etchant over the density meter 26, which is also from the run 22 runs to the collecting container 15, can be neglected in this context).
  • the level in the overflow 22 of the electrolytic cell 11 rises so far that the same amount of etchant, which was previously pumped via line 39 into the collecting container 15, can now flow back via line 23 into the etching machine 1.
  • This etchant flowing through the line 23 from the electrolysis cell 11 to the etching machine 1 is depleted to a certain density of copper by the electrolysis process which takes place in the electrolysis chamber 14, so that the supply of low-density etchant via line 23 circulates in the etching machine 1 Etchant is brought back into the permissible density range.
  • the density meter 38 determines that the density of the etchant in the buffer tank 31 has dropped below a predetermined value, it closes the solenoid valve 40 again.
  • the supply of etchant from the buffer tank 31 into the collecting container 15 of the electrolytic cell 11 is stopped; the etchant is now again substantially circulated in a closed circuit between the etching machine 1 and the buffer tank 31 via the pump 32, the filter 33 and the injectors 34 and 35, until the density value 38 is again determined by the progressive etching process to exceed the density value becomes.
  • the etchant is located in the electrolysis cell 11, that is to say between the opening Catch container 15 and the electrolysis chamber 14 continuously in circulation as long as the solenoid valve 25 is open.
  • the total amount of the etchant in the electrolysis cell 11, ie the sum of the contents of the collecting container 15 and the electrolysis chamber 14, is always constant.
  • the etchant is passed through the electrolysis chamber 14 from bottom to top, wherein it is progressively freed from copper by the electrolysis process depending on the distance traveled (corresponding to the dwell time between the electrodes 12).
  • the density of the etchant within the electrolysis chamber 14 thus decreases from the bottom to the top.
  • the density meter 26 through which the depleted etchant which flows into the overflow 22 flows continuously, determines a density above a predetermined minimum value in this, the variable transformer 28 is in a position in which a relatively high current flows between the electrodes 12:
  • the electrolysis takes place with the deposition of copper from the etchant flowing through the electrolysis chamber 14.
  • the density meter 26 sets the servomotor 27 in operation.
  • the variable transformer 28 is now brought into a position in which a considerably reduced quiescent current flows between the electrodes 12.
  • This quiescent current is dimensioned such that the electrolytic deposition of copper on the electrodes 12 is essentially in the same weight as the chemical etching back of the copper from the electrodes 12 by the etchant.
  • the quiescent current is set so that the electrolytic deposition of copper on the electrodes 12 slightly outweighs the chemical etching back.
  • the density of the etchant circulated in the electrolysis cell 11 now rises again by the supply of copper-enriched etchant from the buffer tank 31 until the density meter 26 finally detects that a density limit value has been exceeded and the motor 27 is acted on. This then leads the variable transformer 28 back to the position in which it is between the electrodes
  • the control of the etching system described thus takes place in such a way that the density control within the etching machine 1 (with a connected buffer tank 31) takes place essentially independently of the density control within the electrolysis cell 11.
  • the density of the etchant within the electrolytic cell 11 (more precisely at its overflow 22) is determined by the density meter 26 and the direct current source regulated thereby
  • the electrolytic cell 11 for the control of the etching machine 1 can essentially be regarded as a source of depleted etching agent below a certain density value.
  • the density of the etchant in the etching machine 1 is kept between certain limit values by the density meter 38 in that enriched etchant is discharged via the line 39 and supplied by the electrolytic cell 11 depleted as a source via the line 23 to an appropriate extent.
  • the etching system described is characterized by very fast control behavior.
  • This fast response speed of the control devices is based firstly on the fact that the electrolysis chamber 14 regulates the density in the electrolytic cell 11 does not have to be alternately drained and pumped again.
  • the changeover of the current, which flows between the electrodes 12, between a working current and a quiescent current can take place very quickly, so that the electrolysis process can be resumed very quickly if required.
  • a second reason for the rapid controllability of the density of the etchant in the etching machine 1 lies in the separate regulation of the density values of the etchant in the etching machine 1 and in the electrolysis cell 11.
  • the etchant located in the electrolysis chamber 14 is drained into the collecting container 15 in the same way as was the case in the prior art.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

Une installation de gravure comporte une machine de gravure (1) dans laquelle l'agent de gravure est enrichi avec du métal qui a été corrodé pendant le processus de gravure. L'agent de gravure est régénéré dans une cellule électrolytique (11) par enrichissement électrolytique en métal. L'électrolyse à l'intérieur de la cellule électrolytique (11) est commandée par un densimètre (26) qui contrôle la densité de l'agent de gravure quittant la cellule électrolytique (11). Si cette densité tombe au-dessous d'une valeur donnée, la cellule électrolytique (11) est désactivée, de sorte que le courant fourni par une source de courant continu (13) tombe d'une valeur de fonctionnement à une valeur moindre au repos, pour laquelle le dépôt électrolytique du métal sur les électrodes (12) contre-balance ou excède légèrement l'attaque en retrait chimique du métal en provenance des électrodes (12).
PCT/EP1990/001636 1989-10-23 1990-09-28 Installation de gravure et proceder pour graver des objets Ceased WO1991005888A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19893935222 DE3935222A1 (de) 1989-10-23 1989-10-23 Aetzanlage sowie verfahren zum aetzen von gegenstaenden
DEP3935222.6 1989-10-23

Publications (1)

Publication Number Publication Date
WO1991005888A1 true WO1991005888A1 (fr) 1991-05-02

Family

ID=6391996

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1990/001636 Ceased WO1991005888A1 (fr) 1989-10-23 1990-09-28 Installation de gravure et proceder pour graver des objets

Country Status (2)

Country Link
DE (1) DE3935222A1 (fr)
WO (1) WO1991005888A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2006410A2 (fr) 2007-06-19 2008-12-24 Markisches werk Gmbh Revêtement protecteur par projection thérmique pour des sustrats métalliques
CN108004545A (zh) * 2017-12-25 2018-05-08 李婉清 一种电路板腐蚀液再生装置及其方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008766B2 (de) * 1970-02-23 1971-07-29 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Verfahren zum regenerieren einer kupferhaltigen aetzloesung insbesondere fuer die herstellung von gedruckten schaltungen
DE2650912A1 (de) * 1976-11-06 1978-05-18 Hoellmueller Maschbau H Elektrolytische regeneration eines aetzmittels
US4490224A (en) * 1984-04-16 1984-12-25 Lancy International, Inc. Process for reconditioning a used ammoniacal copper etching solution containing copper solute
EP0211322A1 (fr) * 1985-07-24 1987-02-25 Siltec Marketing International Ltd. Dispositif pour la récupération d'argent
EP0117068B1 (fr) * 1983-01-20 1988-03-23 The Electricity Council Procédé et appareil pour le décapage du cuivre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH587923A5 (en) * 1971-03-08 1977-05-13 Hoellmueller Maschbau H Etching copper/copper alloys process - using a regenerative soln contg ammonium and chloride ions
DE2434305C2 (de) * 1974-07-17 1983-09-29 Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg Ätzanlage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008766B2 (de) * 1970-02-23 1971-07-29 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Verfahren zum regenerieren einer kupferhaltigen aetzloesung insbesondere fuer die herstellung von gedruckten schaltungen
DE2650912A1 (de) * 1976-11-06 1978-05-18 Hoellmueller Maschbau H Elektrolytische regeneration eines aetzmittels
EP0117068B1 (fr) * 1983-01-20 1988-03-23 The Electricity Council Procédé et appareil pour le décapage du cuivre
US4490224A (en) * 1984-04-16 1984-12-25 Lancy International, Inc. Process for reconditioning a used ammoniacal copper etching solution containing copper solute
EP0211322A1 (fr) * 1985-07-24 1987-02-25 Siltec Marketing International Ltd. Dispositif pour la récupération d'argent

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2006410A2 (fr) 2007-06-19 2008-12-24 Markisches werk Gmbh Revêtement protecteur par projection thérmique pour des sustrats métalliques
DE102007028109A1 (de) 2007-06-19 2008-12-24 Märkisches Werk GmbH Thermisch gespritzte, gasdichte Schutzschicht für metallische Substrate
US8784979B2 (en) 2007-06-19 2014-07-22 Märkisches Werk GmbH Thermally sprayed gastight protective layer for metal substrates
CN108004545A (zh) * 2017-12-25 2018-05-08 李婉清 一种电路板腐蚀液再生装置及其方法

Also Published As

Publication number Publication date
DE3935222A1 (de) 1991-04-25
DE3935222C2 (fr) 1993-02-18

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