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WO1990013161A1 - Un laser a semi-conducteurs a cavite externe - Google Patents

Un laser a semi-conducteurs a cavite externe Download PDF

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Publication number
WO1990013161A1
WO1990013161A1 PCT/US1990/001978 US9001978W WO9013161A1 WO 1990013161 A1 WO1990013161 A1 WO 1990013161A1 US 9001978 W US9001978 W US 9001978W WO 9013161 A1 WO9013161 A1 WO 9013161A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
diode laser
mirror
lens
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1990/001978
Other languages
English (en)
Inventor
Aram Mooradian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Priority to CA002049943A priority Critical patent/CA2049943A1/fr
Publication of WO1990013161A1 publication Critical patent/WO1990013161A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/08045—Single-mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Definitions

  • This invention relates to the single-frequency, broadly tunable, and single spatial mode high power operation of semiconductor diode lasers.
  • the peak output power from a diode laser is proportional to the active area of the emitting facet of the device and is limited by catastrophic degradation.
  • To increase the output power from from semiconductor diode lasers it is necessary to increase the area of the active gain region.
  • monolithic diode lasers with large emitting areas produce a broad spectral output because they usually operate in many spatial modes and/or filaments.
  • monolithic diode lasers have an output wavelength which is usually centered near the gain peak and can not be easily tuned.
  • the width of the active gain region is referred to, the height of the active gain region in most monolithic diode lasers is usually comparable to the wavelength of light and the wave is guided in this direction. The same Fresnel consideration applies to the height of the active region when the wave is not guided.
  • filamenting there is what is termed as filamenting.
  • multiple portions of the gain region can lase independently due to such effects as nonuniform current injection into the gain region and poor uniformity of material. Instead of being uniformly radiating, the emission pattern occurs with many intense peaks. When this uncontrolled filamenting occurs, the local field intensity of laser light at the facet can exceed that which Is necessary to cause catastrophic degradation.
  • the use of an external cavity on a semiconductor laser can overcome the problems described above. Use of an external cavity wj.ll reduce stimulated emission in all directions except that defined by the external cavity and will also reduce spontaneous emission by clamping the gain at a value lower than that usually occurring in the monolithic device thereby reducing the production rate of such dark line defects.
  • the external cavity laser includes a monolithic diode laser attached to one end of an external resonator.
  • the external resonator has an optically aligned output coupling mirror attached at the end of the resonator opposite the laser and beam shaping optics disposed between the mirror and the laser.
  • the optical elements are arranged so that only one spatial mode will oscillate.
  • Another aspect of this invention includes a monolithic diode laser having an impurity level and which is attached to an external cavity such that radiative transitions involving the impurity level are selected.
  • the resonant cavity includes a spherical lens and a planar mirror.
  • the cavity includes a cylindrical lens and a spherical mirror.
  • the cavity includes a spherical lens and a cylindrical mirror.
  • the cavity includes multiple spherical lenses and either a planar or cylindrical mirror.
  • the beam shaping optics includes a waveguide.
  • a planar mirror is attached to the end of the waveguide opposite to the laser.
  • the waveguide contains a cylindrical lens between the laser and the planar mirror.
  • the - A - waveguide contains a non-linear optical material between the mirror and the laser.
  • the external cavity laser according to this invention employs a semiconductor laser attached to an 5 external resonator which may have several forms. This construction creates a laser which operates with a single spatial mode.
  • Fig. 1.1 is a schematic illustration of a side view of an optical cavity with a spherical lens.
  • Fig. 1.2 is the top view of the optical cavity of Fig. 1.1.
  • Fig. 1.3 is a side view of an optical cavity with a cylindrical lens.
  • Fig. 1.4 is the top view of the optical cavity of Fig. 1.3.
  • 15 Fig. 1.5 is a side view of an optical cavity with a spherical lens and cylindrical mirror.
  • Fig. 1.6 is the top view of the optical cavity Fig. 1.5.
  • Fig. 1.7 is a side view of an optical cavity of a two spherical lens system with a flat or cylindrical (shown in phantom) mirror.
  • Fig. 20 1.8 is the top view of the optical cavity of Fig. 1.7;
  • Fig. 2.1 is a schematic illustration of a side view of a single mode waveguide optical cavity resonator.
  • Fig. 2.2 is the top view of the waveguide optical cavity of
  • Fig. 2.1. Fig. 2.3 is a side view of a grazing incidence waveguide optical cavity.
  • Fig. 2.4 is a top view of the waveguide optical cavity of Fig. 2.3.
  • Fig. 2.5 is a side view of a grazing incidence waveguide optical cavity resonator containing a non-linear element.
  • Fig. 2.6 is a
  • FIG. 30 top view of the waveguide optical cavity of Fig. 2.7;
  • FIG. 3.1 is a schematic illustration of a side view of a combination geometric and waveguide optical cavity.
  • Fig. 3.2 is the top view of the combination geometric and waveguide optical cavity of Fig. 3.1;
  • Fig. 4 is an exploded view of the components of the laser cavity
  • Fig. 5.1 is a schematic illustration of a side view of a single mode waveguide optical cavity resonator with the laser diode within the external cavity;
  • Fig. 5.2 is a top view of the waveguide optical cavity of Fig. 5.1;
  • Fig. 6.1 is an energy diagram showing a radiative transition to an impurity band
  • Fig. 6.2 is an energy diagram showing a radiative transition from an impurity band.
  • a semiconductor laser with a reflective back surface 11 and an antireflective front surface 13 is attached to an optical resonator consisting of a spherical lens 14 and a planar mirror 16.
  • the lens 14 located one focal length from the facet 12.
  • the light so collected is collimated onto the planar mirror 16 through a mode aperature 17 and reflected back through the spherical lens 14 to be refocused onto the laser facet 12.
  • the dimensions of the aperature are such that only the fundamental spatial mode will propagate in the laser resonator. Because the mirror 16 is only partially reflecting, some of the laser light passes through for use.
  • the laser light in Fig 1.1 may be waveguided in the plane of the diode laser junction region but not necessarily in the same guiding region which occurs in the monolithic device. Guiding in a larger region may be accomplished by confinement in layers of different refractive index which occur above and/or below the usual region of the monolithic device. For devices with a large enough optical transparency region, there will be no guiding and the usual Guassian mode optics apply. Referring to Fig. 2.2, since the laser is constructed so that the width of the emitting region is much larger than the height, the fundamental mode is brought to a focus at mirror 16 through the mode aperature 17 in a manner consistent with the usual Guassian optics for a laser resonator.
  • the length of the diode is small compared to the length of the external cavity.
  • the wave must be either guided in both dimensions inside the diode or the diode should be optically transparent such that a fundamental spatial mode of the external cavity may propagate in both dimensions inside the diode laser device. Dark line defects are thought to occur and propagate primarily because of the spontaneous emission within the diode laser itself. If the threshold for stimulated emission can be lowered by control of the diode laser cavity parameters such as an external cavity, the gain will be clamped at a lower level than usually occurs for the monolothic device thereby lowering the level of spontaneous emission.
  • an antireflection coating of sufficiently low reflectivity is applied to one or both sides of the diode laser depending on the external cavity geometry.
  • the external cavity device can then be operated in the fundamental spatial mode which will provide a well defined field intensity at the diode laser facet without hot spots associated with filamenting, thereby allowing the laser to be driven near the limit of catastrophic degradation. This, together with increasing the size of the mode area in the diode laser over that for the monolithic device by the use of an external cavity will allow operation of the laser at higher power levels than that for the monolithic device.
  • an external cavity laser comprises a cavity spacer 410 which houses a lens assembly 412.
  • the lens assembly 412 fits into a positioning barrel 420 which is oveably mounted in a positioning bracket 418.
  • the barrel 420 is made so as to move along the axis of the cavity and thereby allow the focusing of the light from the laser diode 426.
  • the laser diode 426 is mounted within a copper heat sink 422 and heat sink 422 and diode 426 are rigidly mounted to a mounting bracket 424.
  • the mounting bracket 424 is movably mounted to an adjustment stop 428 which is affixed to the tabs 440 of the positioning bracket 418.
  • a ceramic bracket having a low or zero coefficient of thermal expansion 430 is attached to the heat sink 422 to thermally isolate the diode 426 from the rest of the cavity.
  • Two flat seals 432 and 434 separate the positioning bracket 418 and the mirror bracket 442 respectively.
  • the mirror bracket 442 holds a mirror 444 at one end of the cavity.
  • the mirror 444 is constrained not to move relative to the cavity by use of a crushable gasket 416 and a mirror- retraining bracket 438.
  • the cavity so designed will be not only constant in length but will also not be susceptible to flexing which will change the optical alignment. It should be noted that any change in the length of the cavity does not result in misalignment since the image will still appear on axis with respect to the diode.
  • the laser cavity cari include tuning etalons or gratings.
  • an etalon with a free spectral range greater than twice the gain bandwidth of the diode 436 is held in an etalon bracket 414 and secured in position within the mirror bracket 442. In this way tuning of the external cavity laser over its entire bandwidth can be accomplished by tilting the etalon.
  • cylindrical lens 18 is located one focal length from the laser facet 12.
  • the light from the facet 12 is collimated through an aperture 17 onto a spherical mirror 20.
  • the focal point of the spherical mirror 20 is at the facet 12 of the laser 10.
  • the cylindrical lens 18 is used because the facet 12 is extended in one direction and need not be focused.
  • the lens 18 is therefore oriented along the line of the facet 12. Referring to Fig. 1.4, the lack of focus with this orientation of the cylindrical lens 18 is readily apparent.
  • Fig. 1.5 this is the embodiment shown in Fig. 1.1, but with a cylindrical mirror 22 located at a distance from the lens 14 equal to the focal length of the spherical lens 14 plus the focal length of the cylindrical mirror 22.
  • the lens 14 in conjunction with the aperture If colli ates light in the direction of orientation of the mirror 22 so that the mirror acts as a planar reflector.
  • the light is defocused by the passage of the beam through the focal point of the lens 14, and is refocused by the mirror 22 upon, reflection so as to be collimated along the length of the facet 12.
  • the first spherical lens 14 is positioned one focal length away from the laser facet 12 and collimates the divergent beam.
  • This collimated beam passes through an aperture 17 and through a second lens 24 located at a distance away from the first lens 14 equal to the focal length of the first lens 14 plus the focal length of the second lens 24.
  • the second lens 24 refocuses the beam onto either a planar mirror 16 located at a distance of the focal length of the second lens 16 or on a cylindrical mirror 22 (shown in phantom) , which is located at to a distance away from the second lens 24 equal to the focal length of the second lens 24 plus the focal length of the mirror 22.
  • FIG. 1.8 the top view of Fig. 1.7 shows the positioning of the lenses 14 and 24 so as to produce a collimated beam on the facet 10 and mirrors 16 or 22 (shown in phantom) while inverting the beam passing through the 5 pair of lenses 14 and 24.
  • the diode laser 10 is attached to a waveguide optical cavity comprising a grazing incidence or a single mode waveguide 30 and a planar output coupling mirror 16.
  • the waveguide 30 is attached at the
  • the laser has a highly reflective coating 11 on the surface away *from the waveguide 30.
  • the mirror 16 is located at a distance from this highly reflective coating 11. Referring to Fig. 2.2, D is the width of the grazing (..-
  • the length of the waveguide is about 2.6 cm.
  • Waveguides of this size are easily created by one skilled in the art using known technology. For example, cavities could be formed by
  • waveguide optical cavity could be formed from a grazing incidence waveguide 32 attached to a diode laser 10 and a cylinder lens 18 and terminated by a planar output coupling mirror 16.
  • the le gt ⁇ and width D of the cavity must satisfy the relationship: D
  • a cylindrical lens 18 is located at its focal length (f) from the laser facet 12 and light through the lens is collimated. As in the embodiment shown in Figs. 1.3 and 4, the cylindrical lens 18 is oriented to focus light on the facet 12.
  • a non-linear optical material such as potassium niobate is placed within the cavity 32 so as to generate harmonics of the frequency of the diode laser 10. The non-linear material may be coated so as to transmit only selected frequencies. Referring to Fig.
  • a combination waveguide and geometric optical resonant cavity can be formed by attaching the laser to an external cavity 34 comprising a cylindrical lens 18 located between the laser 10 and the output coupling mirror 16 and choosing the width D and length Jt, of the cavity 34 to satisfy the relationship: D / ⁇ - ⁇ Jc , but allowing the heighth of the cavity to be much greater than D.
  • a further design could place the diode in the center of an external cavity. This approach is applicable to all of the external cavities discussed here.
  • One mirror 522 is 100% reflective and reflects the laser light back to the diode laser 510.
  • the other mirror 520 is partially transparent and acts as an output coupler.
  • One way to use the optical cavity is to tailor the emissions of a laser to produce radiation from impurity levels.
  • impurity levels can be created which are in the band gap.
  • a semiconductor laser for example, a graded index separate confinement heterostructure (GRIN-SCH) laser
  • impurity levels can be created which are in the band gap.
  • Fig. 6.1 an impurity level 612 is located between the excited state 610 and the valence band 620 at an energy near the excited state 610.
  • a non-radiative transition 622 can bring an electron into the-impurity level 612.
  • This is then followed by a radiative transition 616 resulting in radiation 628 having energy equal to the energy difference between the valence band 620 and the impurity level 612.
  • the impurity level 614 may be located closer to the valence band 620, in which case a radiative transition 618 can take place between the excited aj-ate 610 and the impurity level 614.
  • the photon 628 emitted is then equal in energy to the difference in energy between the excited state 610 and the impurity level 614. All occupied energy states in the conduction or valence bands (?an participate in the laser transitions .
  • a radiative transition involving an impurity level may be selected.
  • impurities and cavities By judicious selection of impurities and cavities, a laser with tunable frequencies less than those corresponding to the usual band-to-band transitions can be produced.
  • the external cavity lasers according to the invention exhibit a single frequency output of high intensity.
  • the external cavity may be fabricated easily and at low cost resulting in a high volume, low cost monochromatic source.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

Un laser à semi-conducteurs à cavité externe (10) comprend une cavité de résonance (12, 16) accouplé à un laser diode (11). La cavité comprend soit une lentille (14) soit un système de lentille (14, 24) ou est réalisé sous forme de guide d'ondes optique (30). Ladite cavité (12, 16) peut comprendre également une matière optique non linéaire (32) de manière à produire une lumière dont la fréquence est supérieure à celle du laser à semi-conducteurs. L'utilisation de la cavité externe (12, 16) assure le mode simple et/ou le fonctionnement à une seule fréquence du laser à semi-conducteurs (10).
PCT/US1990/001978 1989-04-20 1990-04-11 Un laser a semi-conducteurs a cavite externe Ceased WO1990013161A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002049943A CA2049943A1 (fr) 1989-04-20 1990-04-11 Laser a semiconducteur a cavite externe

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US341,028 1989-04-20
US07/341,028 US5050179A (en) 1989-04-20 1989-04-20 External cavity semiconductor laser

Publications (1)

Publication Number Publication Date
WO1990013161A1 true WO1990013161A1 (fr) 1990-11-01

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PCT/US1990/001978 Ceased WO1990013161A1 (fr) 1989-04-20 1990-04-11 Un laser a semi-conducteurs a cavite externe

Country Status (7)

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US (2) US5050179A (fr)
EP (1) EP0469067A4 (fr)
JP (1) JPH04504930A (fr)
CN (1) CN1046641A (fr)
AU (1) AU5555890A (fr)
CA (1) CA2049943A1 (fr)
WO (1) WO1990013161A1 (fr)

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EP0469067A4 (en) 1992-03-18
CN1046641A (zh) 1990-10-31
CA2049943A1 (fr) 1990-10-21
JPH04504930A (ja) 1992-08-27
AU5555890A (en) 1990-11-16
EP0469067A1 (fr) 1992-02-05
US5327447A (en) 1994-07-05
US5050179A (en) 1991-09-17

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