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WO1989004387A1 - Procede et appareil de recristallisation ameliores par coulee en zone - Google Patents

Procede et appareil de recristallisation ameliores par coulee en zone Download PDF

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Publication number
WO1989004387A1
WO1989004387A1 PCT/US1988/004012 US8804012W WO8904387A1 WO 1989004387 A1 WO1989004387 A1 WO 1989004387A1 US 8804012 W US8804012 W US 8804012W WO 8904387 A1 WO8904387 A1 WO 8904387A1
Authority
WO
WIPO (PCT)
Prior art keywords
heating
zone
temperature
comprised
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1988/004012
Other languages
English (en)
Inventor
Paul M. Zavracky
Jack P. Salerno
Matthew M. Zavracky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kopin Corp
Original Assignee
Kopin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kopin Corp filed Critical Kopin Corp
Publication of WO1989004387A1 publication Critical patent/WO1989004387A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Definitions

  • This invention relates generally to the conversion of amorphous or polycrystalline semiconductor materials to substantially single crystal semiconductor material by a process known as zone-melting-recrystallization (ZMR) .
  • ZMR zone-melting-recrystallization
  • a sample to be recrystallized is placed on a heater which raises the temperature of the sample close to its melting point.
  • a strip heater positioned above the sample is then energized to induce melting of a zone on the sample directly beneath the strip heater element.
  • the strip heater is then translated past the surface of the sample, causing the melting zone to move in unison with the heater to induce melting then solidification of the sample to achieve lateral epitaxial growth thereby transforming the " sample into a single crystal material.
  • the present invention comprises a new heating system that accomplished the same task with no moving parts.
  • a moving heat zone is electrically provided using a heater block fabricated from
  • Alumina, Zirconia, or some other refractory material in such a way as to support a large number of small heating elements.
  • these heating elements are placed in small grooves machined into the refractory block.
  • Each of these wire elements is supplied with electrical current through a control circuit. With such a circuit, it is possible to provide any combination of heated elements at any desired temperature. When sufficient current is provided to a heating element, it will become hot due to its resistivity.
  • the refractory block is machined in such a way as to provide support of a silicon wafer. The wafer is centered over the hot zone. The heating element lengths could be adjusted so that they do not extend beyond the edges of the wafer.
  • Figure 1 is a perspective view of the zone melt recrystallization apparatus of the present invention.
  • FIG. 2 is a schematic diagram of the control circuit for the apparatus of Figure 1.
  • FIG. 1 A preferred embodiment of the invention is illustrated in the perspective view of Figure 1.
  • the entire block 10 would be raised to the temperature for ZMR operation just below the melting point of a semiconductor material 11.
  • individual elements 13 are heated to a temperature required to melt the semiconductor 11.
  • To create a hot zone 80 mils in width for example requires four heating elements with a 25/1000 inch spacing between each element. These individual heating elements can be provided with enough additional current above their bias current to melt the silicon material.
  • the power would be provided to an adjacent heating element, to one side of the four presently being heated, while the element on the opposite side of the four hot elements would be provided only its bias current. In this way, the hot zone would be shifted over by one heating element. This process could be continued at any desired rate to move the zone across the wafer.
  • the heating elements could be heated in a more analog or continuous way in order to produce a much smoother transition as the heating zone is translated.
  • this heater concept provides a way of significantly reducing the mechanical strains in the ZMR processing system.
  • the moving zone could be made to move more uniformly and more smoothly than any mechanical system and at a significant reduction in overall system complexity and cost.
  • a silicon wafer 11 is placed top side down on the plate 12 which is in thermal contact with elements 13. Instead of picking up a wafer with pins as is done in current systems, it would be much more desirable to use a vacuum in this system.
  • a further advantage is that in order to view the molten zone in the present system, we use a video camera which must be placed at exactly the right angle with respect to the upper heater, which limits the field of view as it permits viewing of only a fraction of the molten zone.
  • the camera 14 which is sensitive to infrared light, would view the entire melt zone through the backside of the wafer 11.
  • the infrared image can be used to provide a feedback signal to the control circuit to insure that heating rates are within predetermined tolerance.
  • FIG. 2 shows a schematic diagram of the control elements of a preferred embodiment of the invention.
  • the resistors R , R , and R_ represent individual heating elements. There are about 300 of these elements in the present embodiment. Only three are shown for purposes of illustration.
  • a first DC current source I_ provides power to bring the heater close to the melting temperature of the wafer.
  • a second DC current source I p supplies power to bring each heater element to the melting temperature of the wafer when commanded by computer.
  • Each element has a pair of transistors, one to connect the positive side of the I p source, and the second to connect the negative terminal of the I p source, to the desired element or elements. This allows both icnreasing and decreasing the current of the selected elements around the I ⁇ value.
  • the computer tells the multiplexer which elements will be effected by the Ip source.
  • the computer also establishes the set points for the controlled elements which in combination with the video cameral provide the control of the pulse width modulator.
  • Another preferred embodiment utilizes a heater element wherein the elements are portions of a single wire wound about the block such that each portion is controlled by the circuit as shown in Figure 2.
  • Yet another embodiment uses carbon or graphite elements deposited on the plate, which may be made from alumina, zirconia, or some other refractory material. These elements can be formed into a sequence of parallel lines, each individually controlled. The elements can also be configured in a dot matrix type configuration.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'appareil de recristallisation amélioré par coulée en zone est constitué d'un élément chauffant comprenant une pluralité d'éléments chauffants commandés individuellement. Les éléments sont chauffés séquentiellement pour générer une zone de fusion dans un matériau semi-conducteur qui est translatée au travers du matériau en chauffant puis en refroidissant les éléments chauffants adjacents pour recristalliser le matériau.
PCT/US1988/004012 1987-11-13 1988-11-09 Procede et appareil de recristallisation ameliores par coulee en zone Ceased WO1989004387A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12002287A 1987-11-13 1987-11-13
US120,022 1987-11-13

Publications (1)

Publication Number Publication Date
WO1989004387A1 true WO1989004387A1 (fr) 1989-05-18

Family

ID=22387820

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1988/004012 Ceased WO1989004387A1 (fr) 1987-11-13 1988-11-09 Procede et appareil de recristallisation ameliores par coulee en zone

Country Status (2)

Country Link
CA (1) CA1333466C (fr)
WO (1) WO1989004387A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3433627A (en) * 1965-12-29 1969-03-18 Cominco Ltd Zone refining
US4086424A (en) * 1977-03-31 1978-04-25 Mellen Sr Robert H Dynamic gradient furnace and method
WO1982003639A1 (fr) * 1981-04-16 1982-10-28 Massachusetts Inst Technology Croissance epitaxiale laterale a l'aide d'une solidification provoquee par des germes
FR2583572A1 (fr) * 1985-06-18 1986-12-19 Sony Corp Procede et appareil pour fabriquer un film mince cristallin.
US4694143A (en) * 1985-02-26 1987-09-15 Mitsubishi Denki Kabushiki Kaisha Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3433627A (en) * 1965-12-29 1969-03-18 Cominco Ltd Zone refining
US4086424A (en) * 1977-03-31 1978-04-25 Mellen Sr Robert H Dynamic gradient furnace and method
WO1982003639A1 (fr) * 1981-04-16 1982-10-28 Massachusetts Inst Technology Croissance epitaxiale laterale a l'aide d'une solidification provoquee par des germes
US4694143A (en) * 1985-02-26 1987-09-15 Mitsubishi Denki Kabushiki Kaisha Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer
FR2583572A1 (fr) * 1985-06-18 1986-12-19 Sony Corp Procede et appareil pour fabriquer un film mince cristallin.

Also Published As

Publication number Publication date
CA1333466C (fr) 1994-12-13

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