WO1989000360A1 - Circuit a transistors de commutation programmables - Google Patents
Circuit a transistors de commutation programmables Download PDFInfo
- Publication number
- WO1989000360A1 WO1989000360A1 PCT/AU1988/000235 AU8800235W WO8900360A1 WO 1989000360 A1 WO1989000360 A1 WO 1989000360A1 AU 8800235 W AU8800235 W AU 8800235W WO 8900360 A1 WO8900360 A1 WO 8900360A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- voltage
- terminal
- circuit according
- potentiometer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 230000010355 oscillation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000032953 Device battery issue Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/282—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
- H03K3/2826—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable using two active transistors of the complementary type
- H03K3/2828—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable using two active transistors of the complementary type in an asymmetrical circuit configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
- H02P7/05—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of electronic switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
Definitions
- This invention relates to a programmable, or controllable, switching transistor circuit and relates particularly to such a circuit which may be used to control power delivered to a motor, a power dimming circuit, welding equipment, switching regulators, overload protectors, chokes for fluorescent lights and the like.
- SCR silicon-controlled rectifier devices
- Thyristors also known as Thyristors
- GCR Germanium-controlled rectifier devices
- a voltage switching circuit which has a variety of applications ranging from a simple oscillator circuit to motor control. It is also desirable to provide a programmable switching transistor circuit arrangement where a simple, variable impedence, such as a variable resistor, or potentiometer, may be used to control the switching parameters.
- a programmable switching transistor circuit comprising at least two semi-conductor devices of opposite types, wherein the base terminal of one device is connected to an anode terminal of a second device and a cathode terminal of the said one device is connected to a control terminal, and a voltage dependant switch means is connected between the control terminal and a base terminal of the second device.
- the programmable switching transistor circuit of the invention behaves similarly to an SCR but is programmable, or controllable, to switch on and off at predetermined voltage levels.
- a pair of switching circuits may be connected back-to-back, or as a complimentary pair, for full wave use of ac or for a non-polar dc inverter, or the like.
- the circuit arrangement behaves in a similar manner to a TRIAC, but the circuit is fully programmable or controllable to switch ON and OFF at predetermined voltage levels.
- the switching transistor circuit of the invention may be used inside a diode bridge for a full wave control.
- the anode and cathode terminals ' , and the control terminal are connected through a resistor or impedance network on one side of the load, and the voltage across the zenner diode is controlled to vary the frequency of oscillation. Generally, the lower the voltage of the zenner the higher is the possible oscillator frequency.
- Use of the circuit as in a self-oscillating mode enables the circuit to be used as a dc ballast, an inverter or converter or for an arc welder or other high frequency application.
- Figure 1 depicts schematically a conventional silicon-controlled rectifier
- FIG. 2 illustrates the programmable switching transistor circuit of the present invention in its simplest form
- FIG. 3A illustrates one possible switching circuit configuration
- Figure 3B is a modified circuit of that illustrated in Figure 3a
- Figure 4 illustrates a simple oscillator circuit.
- Figure 5 illustrates another circuit configuration with two switching circuits of the present invention connected in parallel,
- Figure 6 illustrates another oscillator circuit similar to that of Figure 5,
- Figure 7A illustrates a battery charger control circuit utilizing the switching circuit of the present invention
- Figure 7B is a modified circuit of that illustrated in Figure 7A. Description of the Preferred Embodiments
- FIG. 1 there is illustrated schematically the arrangement of an SCR which can be considered the equivalent of a pnp type transistor 12 connected to an npn type transistor 14.
- both transistors are non-conducting.
- the transistor 14 Upon application of a small positive trigger voltage to the base of the transistor 14 through the terminal G, the transistor 14 begins to conduct, and as the collector current ⁇ in transistor 14 is equal to current flowing to the base of transistor 12, that transistor 12 also begins to conduct. Both transistors will continue to conduct after termination of the trigger voltage until anode current is reduced to a value less than the holding current for the transistors used.
- the simplest form of programmable switching transistor circuit of the invention is the schematic representation of the SCR with the addition of a zenner diode, or other voltage dependant switching device.
- the zenner diode is in the gate circuit, between the base of transistor 14 and the collector of transistor 12.
- the value of the zenner diode determines the switching voltage at which the transistor 14 switches OFF to provide a voltage controlled circuit which can be turned OFF while the current is above the holding current value.
- the voltage controlled switching circuit avoids difficulties which otherwise arise due to phase differences causing power surging, particularly at low power levels. Further, gate temperature compensa ⁇ tion, which is often necessary with conventional devices, is generally unnecessary.
- Figure 3A illustrates one operative configuration of the invention where the circuit is used to control a load current, such as a motor controller.
- the transistors 12 and 14 are connected with the emitter of the transistor 12 connected to one side of the load 18 and the emitter of transistor 14 connected through the potentiometer 16 and resistor 17 to the other side of the load 18.
- the value of the zenner diode 15 and the gate voltage as determined by the. potentiometer control the ON and OFF switching voltages for the load.
- the motor speed is controlled by the potentiometer 16 which effectively varies the width of the wave form of the motor supply current.
- FIG. 3B illustrates a way whereby the control range may be further extended.
- the resistor 17 may only be required in some circuit configurations to protect the base of the transistor 14 in case one or other of the transistors does not turn on quickly enough. However, in most applica ⁇ tions, this resistance may be omitted and the circuit operated only with the potentiometer.
- the frequency can be set by any reactive component in the gate circuit.
- reactive component may be inductive or capacitive or a combination thereof, and including resistance components, the variation of which can be used to change or adjust the oscillation frequency.
- a complimentary pair of switching transistors may be utilized or the circuit of the invention connected in a back-to-back or parallel configur ⁇ tion, or the circuit may be connected inside a bridge rectifier. In the latter case in which a circuit is located within a bridge rectifier, the arrangement approaches a basic TRIAC circuit. When a complimentary pairs circuit is similarly configured it does behave as a TRIAC.
- Figure 5 illustrates a self-oscillating programm ⁇ able switching transistor circuit comprising parallel connected, reversed transistor pairs TR1 , TR2 and TR3 and TR4. Both transistors TR1 and TR4 are pnp transistors while the transistors TR2 and TR3 are both npn type transistors. Because the second pair of transistors TR3 and TR4 conduct in the reverse direction, the zenner diode 15a is connected in the reverse way as compared to t ⁇ e zenner diode 15.
- the potentiometers 31 and 32 are a two-ganged pot reversely connected.
- the resistors 33 and 34 provide protection for the respective transistors TR1 and TR4.
- the back-to-back configuration of Figure 5 operates in an ac circuit configuration.
- the diodes 21 and 22 are provided to prevent the transistors TR1 and TR3, respectively, firing both through the potentiometer as well as through the respective zenner diodes.
- This diode block can also be used to advantage in the other circuits illustrated.
- the circuit of Figure 5 can be used in any self-oscillating mode and is particularly useful for- an arc welder or other high frequency application.
- the circuit is particularly useful in an arc welder or a ballast for fluorescent lights to either substantially reduce or completely obviate the need for highly inductive loads.
- circuit of Figure 5 When the circuit of Figure 5 is configured as shown in Figure 6, it can be used as a controllable switching circuit in an ac circuit, such as a motor control circuit.
- the circuit operates in a similar manner to that described for the circuit of Figure 3.
- the load may be connected on either the anode or cathode side of the circuit of the invention in all cases.
- the circuits may be driven by external oscillator or external pulse generator or may be run as a self-oscillating circuit and modulated by such external circuitry, such as an adjustable pulse-width modulator to give a variable power supply. Whatever is used to modulate the device, a square wave output will result. Thus, any modulation will be converted to a square wave output. The device may therefore be used to modulate any ac waveform.
- a battery charger control circuit incorporating a programm ⁇ able switching transistor circuit of the present invention and utilizing two potentiometers 24 and 26.
- the potentiometer 24 is used to adjust the high value of switching voltage and the potentiometer 26 adjusts the voltage differential, thus setting the low voltage level.
- the circuit operates as a differential switch to switch on and off between the two -chosen voltages and actuates a relay coil 28 which controls battery charging operation. Used this way, it is advantageous for TR2 to be of Darlington type.
- a timer is incorporated into the circuit to prevent undesirable oscillation in the event of a battery failure.
- a deteriorating battery may exhibit a voltage drop below the "turn on” voltage when load is switched in and rise above the "turn off” voltage as soon as the charger is witched ON thereby causing the charger to switch OFF again.
- the oscillation resulting may destroy other circuit components, such as a supply transformer or the like.
- a timer in the charger circuit will act to hold the charger in an ON state for a predetermined period after the battery voltage exceeds the "turn off” voltage, e.g. a period of five seconds, which interrupts a potential oscillation. Modification of the circuit of Figure 7A enables single pot variable power.
- P16 R15 act as variable voltage divider so that turn off is zenner volts below turn on.
- zenner diodes shown in the circuits described above may be replaced with any suitable voltage dependant switch, such as a diac, Schottky diode or the like.
- the switching circuits of the present invention are particularly suitable for use in arc welders, including MIG and TIG welders, to reduce choke and transformer sizes.
- the circuits may also be used as ballasts in fluorescent light circuits, for inverters, converters, miniaturization of transformers, various switches and regulators including voltage dependant switches, current dependant switches and overload protectors, simple light dimmer circuits and motor control circuits, and the like.
- the circuits of the present invention may utilize SCR's, GCR's, valves, and field effect transistors (FET, MOSFET, etc.). Varia ⁇ tions will be self evident to the person skilled in the art.
- circuit of the invention is as a chopped mode regulator, i.e., the device may be used as a chopped mode dc supply whereby the power supply in a circuit is adjustable.
- All the circuits indicated and described above can be made of opposite polarity by reversing the roles of the pnp and npn transistors together with reversal of the zenner diodes, Schottky diode- or other voltage dependant switch device.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Circuit à transistors de commutation programmables doté d'au moins une paire de dispositifs (12, 14) semi-conducteurs de types opposés, par exemple de types pnp et npn, interconnectés avec la borne de gâchette du premier dispositif (2). La borne de cathode du premier dispositif (12) est connectée à une borne (G) de commande. Un commutateur (15) réagissant à la tension, tel qu'une diode Zener, est connecté entre la borne (G) de commande et la borne de gâchette du second dispositif, grâce à quoi le circuit devient commandé en tension pour commutation en circuit et hors circuit, en fonction de paramètres de circuit externes et de la valeur de la tension du commutateur (15).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPI2883 | 1987-07-03 | ||
| AU288387 | 1987-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1989000360A1 true WO1989000360A1 (fr) | 1989-01-12 |
Family
ID=3693378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/AU1988/000235 WO1989000360A1 (fr) | 1987-07-03 | 1988-07-01 | Circuit a transistors de commutation programmables |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1989000360A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0858165A1 (fr) * | 1997-02-11 | 1998-08-12 | STMicroelectronics S.r.l. | Circuit intégré pour réaliser la fonction d'une diode DIAC |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3313985A (en) * | 1964-04-03 | 1967-04-11 | Dickson Electronics Corp | Solid state d.c. circuit breaker |
| FR2220932A1 (en) * | 1973-02-22 | 1974-10-04 | Cit Alcatel | D.C. Switching telecommunication type electronic switch - has rapid switching with short cct and over voltage protection |
| DD120101A1 (fr) * | 1975-06-18 | 1976-05-20 | ||
| US4041332A (en) * | 1974-07-26 | 1977-08-09 | Hitachi, Ltd. | Semiconductor switch device |
| DD128985A1 (de) * | 1976-12-20 | 1977-12-21 | Eberhard Drechsler | Schwellwertschalter mit stabilisierender wirkung |
| US4350949A (en) * | 1979-12-04 | 1982-09-21 | Nippon Gakki Seizo Kabushiki Kaisha | Bidirectional switching circuit with control terminal |
| SU989750A1 (ru) * | 1980-09-29 | 1983-01-15 | Всесоюзный Научно-Исследовательский И Проектно-Конструкторский Институт Механизированного И Ручного Строительно-Монтажного Инструмента,Вибраторов И Строительно-Отделочных Машин | Пороговый элемент |
| EP0219925A1 (fr) * | 1985-06-17 | 1987-04-29 | Fuji Electric Co., Ltd. | Dispositif de commutation |
-
1988
- 1988-07-01 WO PCT/AU1988/000235 patent/WO1989000360A1/fr unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3313985A (en) * | 1964-04-03 | 1967-04-11 | Dickson Electronics Corp | Solid state d.c. circuit breaker |
| FR2220932A1 (en) * | 1973-02-22 | 1974-10-04 | Cit Alcatel | D.C. Switching telecommunication type electronic switch - has rapid switching with short cct and over voltage protection |
| US4041332A (en) * | 1974-07-26 | 1977-08-09 | Hitachi, Ltd. | Semiconductor switch device |
| DD120101A1 (fr) * | 1975-06-18 | 1976-05-20 | ||
| DD128985A1 (de) * | 1976-12-20 | 1977-12-21 | Eberhard Drechsler | Schwellwertschalter mit stabilisierender wirkung |
| US4350949A (en) * | 1979-12-04 | 1982-09-21 | Nippon Gakki Seizo Kabushiki Kaisha | Bidirectional switching circuit with control terminal |
| SU989750A1 (ru) * | 1980-09-29 | 1983-01-15 | Всесоюзный Научно-Исследовательский И Проектно-Конструкторский Институт Механизированного И Ручного Строительно-Монтажного Инструмента,Вибраторов И Строительно-Отделочных Машин | Пороговый элемент |
| EP0219925A1 (fr) * | 1985-06-17 | 1987-04-29 | Fuji Electric Co., Ltd. | Dispositif de commutation |
Non-Patent Citations (3)
| Title |
|---|
| DERWENT ABSTRACT ACCESSION NO. 84-022038/04, Class U21; & SU,A,989750 (CONS ASSEMBLY INSTR), 15 January 1983 (15.01.83). * |
| DERWENT ABSTRACT ACCESSION NO. B94050A/10, Class R55; & DD,A,128985 (DRECHSLER E.), 21 December 1977 (21.12.77). * |
| DERWENT ABSTRACT ACCESSION NO. G1851X/28, Class R55; & DD,A,120101 (EGGEBRECHT H.), 20 May 1976 (20.05.76). * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0858165A1 (fr) * | 1997-02-11 | 1998-08-12 | STMicroelectronics S.r.l. | Circuit intégré pour réaliser la fonction d'une diode DIAC |
| US5986411A (en) * | 1997-02-11 | 1999-11-16 | Sgs-Thomson Microelectronics S.R.L. | IC for implementing the function of a DIAC diode |
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