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WO1987001513A3 - Gallium arsenide solar cell system - Google Patents

Gallium arsenide solar cell system Download PDF

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Publication number
WO1987001513A3
WO1987001513A3 PCT/US1986/001845 US8601845W WO8701513A3 WO 1987001513 A3 WO1987001513 A3 WO 1987001513A3 US 8601845 W US8601845 W US 8601845W WO 8701513 A3 WO8701513 A3 WO 8701513A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
gallium arsenide
solar cells
faces
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1986/001845
Other languages
French (fr)
Other versions
WO1987001513A2 (en
Inventor
M Edmund Ellion
George Wolff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of WO1987001513A2 publication Critical patent/WO1987001513A2/en
Publication of WO1987001513A3 publication Critical patent/WO1987001513A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

An N-on-P gallium arsenide solar cell, and solar cell arrays incorporating N-on-P gallium arsenide solar cells. In the N-on-P gallium arsenide solar cell, the n-type gallium arsenide faces the sun. The solar cell arrays utilize geometrically alternating, laterally disposed N-on-P solar cells and P-on-N solar cells. Series electrical connections between adjacent solar cells in the array are accomplished by connecting the lower faces of a first and a second solar cell, the upper faces of the second and a third solar cell, and so forth in an alternating pattern. The connections between the upper faces can be eliminated entirely by placing pairs of the N-on-P and P-on-N solar cells in lateral contact to form a module, extending a connector grid across the upper surface of the module, and using strip connectors to joint the bases of adjacent modules.
PCT/US1986/001845 1985-09-09 1986-09-08 Gallium arsenide solar cell system Ceased WO1987001513A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77369685A 1985-09-09 1985-09-09
US773,696 1985-09-09

Publications (2)

Publication Number Publication Date
WO1987001513A2 WO1987001513A2 (en) 1987-03-12
WO1987001513A3 true WO1987001513A3 (en) 1987-05-21

Family

ID=25099033

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1986/001845 Ceased WO1987001513A2 (en) 1985-09-09 1986-09-08 Gallium arsenide solar cell system

Country Status (3)

Country Link
EP (1) EP0236447A1 (en)
IL (1) IL79993A0 (en)
WO (1) WO1987001513A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753683A (en) * 1985-09-09 1988-06-28 Hughes Aircraft Company Gallium arsenide solar cell system
JP3578539B2 (en) * 1996-02-08 2004-10-20 三菱電機株式会社 Solar cell manufacturing method and solar cell structure
DE102006021804A1 (en) * 2006-05-09 2007-11-15 International Solar Energy Research Center Konstanz E.V. Solar cell module and method for the production of solar cell modules
JP5153097B2 (en) 2006-07-31 2013-02-27 三洋電機株式会社 Solar cell module
CN106816479A (en) * 2016-12-27 2017-06-09 中国电子科技集团公司第十八研究所 Flexible solar cell array suitable for near space ultra-long time-of-flight aircraft
FR3100382A1 (en) * 2019-09-02 2021-03-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photovoltaic module with conductive strips and associated manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3888698A (en) * 1972-11-09 1975-06-10 Communications Satellite Corp Infrared-transparent solar cell
WO1979000813A1 (en) * 1978-03-22 1979-10-18 Massachusetts Inst Technology Shallow-homojunction solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3888698A (en) * 1972-11-09 1975-06-10 Communications Satellite Corp Infrared-transparent solar cell
WO1979000813A1 (en) * 1978-03-22 1979-10-18 Massachusetts Inst Technology Shallow-homojunction solar cells

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Volume 36, No. 1, 1 January 1980, American Institute of Physics, (Woodbury, New York, US), J.C.C. FAN et al.: "Shallow-Homojunction GaAs Cells with High Resistance to 1-MeV Electron Radiation", pages 53-56, see the whole document *
Applied Physics Letters, Volume 46, No. 8, 15 April 1985, American Institute of Physics, (Woodbury, New York, US), J.G. WERTHEN et al.: "18.7% Efficient (1-sun, AMO) Large-Area GaAs Solar Cells", pages 776-778 see the whole document *
JEE Journal of Electronic Engineering, Volume 19, No. 186, June 1982, (Tokyo, JP), Y. YUKIMOTO: "Research Advances for GaAs Solar Cells", pages 39-42 see figures 1-4 *
Revue de Physique Appliquee, Volume 17, No. 7, July 1982, (Orsay, FR), M. LE METAYER et al.: "Une Photopile a Haut Rendement pour Utilisation Spatiale", pages 415-419, see paragraph 2 *
The Conference Record of the Fifteenth IEEE Photovoltaic Specialists Conference-1981, 12-15 May 1981, Kissimmee, Florida, (IEEE, US), G.W. TURNER et al.: "GaAs Shallow-Homojunction Concentrator Solar Cells", pages 151-155 see the whole document *
The Conference Record of the Fifteenth IEEE Photovoltaic Specialists Conference-1981, 12-15 May 1981, Kissimmee, Florida, (IEEE, US), J.C.C. FAN et al.: "Thin-Film GaAs Solar Cells", pages 666-672 see Abstract *

Also Published As

Publication number Publication date
EP0236447A1 (en) 1987-09-16
IL79993A0 (en) 1986-12-31
WO1987001513A2 (en) 1987-03-12

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