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WO1985002059A3 - Croissance epitaxiale en phase liquide sur des substrats semi-conducteurs a compose du groupe iii-v contenant du phosphore - Google Patents

Croissance epitaxiale en phase liquide sur des substrats semi-conducteurs a compose du groupe iii-v contenant du phosphore Download PDF

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Publication number
WO1985002059A3
WO1985002059A3 PCT/US1984/001451 US8401451W WO8502059A3 WO 1985002059 A3 WO1985002059 A3 WO 1985002059A3 US 8401451 W US8401451 W US 8401451W WO 8502059 A3 WO8502059 A3 WO 8502059A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
group iii
gas atmosphere
reducing gas
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1984/001451
Other languages
English (en)
Other versions
WO1985002059A2 (fr
Inventor
Vassilis George Keramidas
Jose Almeida Lourenco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Priority to JP85500717A priority Critical patent/JPS61500291A/ja
Priority to DE8585900509T priority patent/DE3469244D1/de
Priority to KR1019850700100A priority patent/KR850700085A/ko
Publication of WO1985002059A2 publication Critical patent/WO1985002059A2/fr
Publication of WO1985002059A3 publication Critical patent/WO1985002059A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

Une croissance épitaxiale en phase liquide (LPE) d'une couche de composé semi-conducteur de groupe III-V sur un substrat de composé semi-conducteur de groupe III-V contenant du phosphore est obtenue dans un creuset en graphite en préchauffant le substrat dans une atmosphère gazeuse non réductrice telle que de l'azote ou de l'hélium, et en mettant le substrat en contact avec un composé en fusion liquide, pouvant provoquer la croissance de la couche, dans une atmosphère gazeuse réductrice, telle que de l'hydrogène. Le préchauffage du substrat dans l'atmosphère gazeuse non réductrice empêche des pertes indésirables de phosphore du substrat, induites par la chaleur, et l'utilisation de l'atmosphère gazeuse réductrice pendant l'étape de croissance évite le problème posé par le collage des parties du dispositif de traitement.
PCT/US1984/001451 1983-10-31 1984-09-14 Croissance epitaxiale en phase liquide sur des substrats semi-conducteurs a compose du groupe iii-v contenant du phosphore Ceased WO1985002059A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP85500717A JPS61500291A (ja) 1983-10-31 1984-09-14 リンを含む３−５族化合物半導体基板上の液相エピタキシャル成長
DE8585900509T DE3469244D1 (en) 1983-10-31 1984-09-14 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
KR1019850700100A KR850700085A (ko) 1983-10-31 1984-09-14 액상 에피택셜 성장 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/547,333 US4500367A (en) 1983-10-31 1983-10-31 LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US547,333 1983-10-31

Publications (2)

Publication Number Publication Date
WO1985002059A2 WO1985002059A2 (fr) 1985-05-09
WO1985002059A3 true WO1985002059A3 (fr) 1985-07-04

Family

ID=24184255

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1984/001451 Ceased WO1985002059A2 (fr) 1983-10-31 1984-09-14 Croissance epitaxiale en phase liquide sur des substrats semi-conducteurs a compose du groupe iii-v contenant du phosphore

Country Status (8)

Country Link
US (1) US4500367A (fr)
EP (1) EP0160701B1 (fr)
JP (1) JPS61500291A (fr)
KR (1) KR850700085A (fr)
CA (1) CA1234036A (fr)
DE (1) DE3469244D1 (fr)
SG (1) SG27188G (fr)
WO (1) WO1985002059A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818722A (en) * 1986-09-29 1989-04-04 Siemens Aktiengesellschaft Method for generating a strip waveguide
JP2503130B2 (ja) * 1991-07-29 1996-06-05 信越半導体株式会社 液相成長方法
JPH08225968A (ja) * 1995-02-01 1996-09-03 Hewlett Packard Co <Hp> 多成分系固体材料のエッチング方法
US6803546B1 (en) 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
KR101103330B1 (ko) * 2010-06-25 2012-01-11 한국표준과학연구원 ＩｎＰ의 강제도핑에 의한 고농도 Ｐ 도핑 양자점 태양전지 및 제조방법
JP6454981B2 (ja) * 2014-04-24 2019-01-23 住友電気工業株式会社 半導体積層体および受光素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
JPS50119566A (fr) * 1974-03-01 1975-09-19
JPS5329508B2 (fr) * 1974-03-27 1978-08-21
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
US4372791A (en) * 1979-04-30 1983-02-08 Massachusetts Institute Of Technology Method for fabricating DH lasers
NL185375C (nl) * 1980-01-16 1990-03-16 Philips Nv Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Journal of Crystal Growth, Vol. 58, No. 1, issued June 1982, North-Holland publishing Company (Amsterdam, NL) E. KUPHAL et al.: "LPE Growth of High Purity InP and In1-xGaxP1-yAsy", pages 133-142, see page 134 *

Also Published As

Publication number Publication date
EP0160701A1 (fr) 1985-11-13
DE3469244D1 (en) 1988-03-10
JPS61500291A (ja) 1986-02-20
WO1985002059A2 (fr) 1985-05-09
SG27188G (en) 1988-09-30
KR850700085A (ko) 1985-10-21
CA1234036A (fr) 1988-03-15
US4500367A (en) 1985-02-19
EP0160701B1 (fr) 1988-02-03

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