[go: up one dir, main page]

UST940016I4 - Isexrch room - Google Patents

Isexrch room Download PDF

Info

Publication number
UST940016I4
UST940016I4 US54061875A UST940016I4 US T940016 I4 UST940016 I4 US T940016I4 US 54061875 A US54061875 A US 54061875A US T940016 I4 UST940016 I4 US T940016I4
Authority
US
United States
Prior art keywords
layer
photoconductive
cell
substrate
arsenic triselenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US54061875 priority Critical patent/UST940016I4/en
Application granted granted Critical
Publication of UST940016I4 publication Critical patent/UST940016I4/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13392—Gaskets; Spacers; Sealing of cells spacers dispersed on the cell substrate, e.g. spherical particles, microfibres

Definitions

  • auelectrooptic cell comprises a bottom electrode (conductii/c, semi-transparent coating 2 on substrate 1), an ovcr'coating oi pfiotocouductiyc arsenic triselenide 3; four or more arsenic tris elenide posts i -yacuum evaporated upon the arsenic t riselenide photoconductive layer 3 and uniformly spaced along the edge of the photoconductivc layer 3; end, a layer of liquid crystallinematcrial residing on the photocoi ct'iyeia yer' 3 and a top electrode (conductive, semi-transparent coating 5 on substrate 6) in contact with the layer '7 of liquid crystalline material and residing on the arsenic trisclenidc spacers 4.
  • the improved uniformity of spacing can be applied to any device, with or Without a photoconductive layer, in which uniformity of imaging layer thickness is desired.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)

Abstract

AN IMAGING CELL IS PROVIDED WITH UNIFORM SPACING BETWEEN SUBSTRATES BY VACUUM EVAPORATION OF PHOTOCONDUCTIVE OR METALLIC MATERIAL UPON ONE CELL SUBSTRATE TO FORM SPACES DURING FABRICATION OF THE CELL. IN A PREFERRED EMBODIMENT, AN ELECTROOPTIC CELL COMPRISES A BOTTOM ELECTRODE (CONDUCTIVE, SEMI-TRANSPARENT COATING 2 ON SUBSTRATE 1), AN OVERCOATING OF PHOTOCONDUCTIVE ARSENIC TRISELENIDE 3, FOUR OR MORE ARSENIC TRISELENIDE POSTS 4 VACUUM EVAPORATED UPON THE ARSENIC TRISELENIDE PHOTOCONDUCTIVE LAYER 3 AND UNIFORMITY SPACED ALONG THE EDGE OF THE PHOTOCONDUCTIVE LAYER 3, AND, A LAYER 7 OF LIQUID CRYSTALLINE MATERIAL RESIDING ON THE PHOTOCONDUCTIVE LAYER 3 AND A TOP ELECTRODE (CONDUCTIVE, SEMI-TRANSPARENT COATING 5 ON SUBSTRATE 6) IN CONTACT WITH THE LAYER 7 OF LIQUID CRYSTALLINE MATERIAL AND RESIDING ON THE ARSENIC TRISELENIDE SPACERS 4. THE IMPROVED UNIFORMITY OF SPACING CAN BE APPLIED TO ANY DEVICE, WITH OR WITHOUT A PHOTOCONDUCTIVE LAYER, IN WHICH UNIFORMITY OF IMAGING LAYER THICKNESS IS DESIRED.

Description

ESQ BQZ an s;
m T M09016 H v? M EARCH ROOM NOV. 4, 1975 K. F. NELSON T940,()16
' IMAGING DEVICE SUBSTITUTE FOR MISSING X-R ()riginal Filed J 13, 1975 DEFENSE/E PUBHEATMN UNITED STATES PATENT AND TRADEMARK OFFICE Published at the request of the applicant or owner in accordance with the Notice of Dec. 16,1969, 839 0.6-. 687. The abstracts of Defensive Publication applications are identified by d tiuctly numbered series and are arranged chronologically. The heading of each abstract indicates the number of pages of spec 1, including claims and sheets of drawings contained in the application as originally filed. The files of these applications are a. vable to the public for inspection and reproduction may be purchased for 30 cents a sheet.
Defensive Publication applications have not been exai Trademark Ofiice makes no assertion as to the novelty of the c PUBLISHED NOVEMBER 45, 1975 194M516 EMAGENG DEVHQE Kyler l Nelson, Pittsiord, NDYD, assign-or to Key Corporation, Stamford, Conn. Filed Jan. 13, 1 75, Ser. No. 4,613 Hut. til. Gilfag 5/34 Si ri -1.5 1 Sheet Drawing. 6 Pages Specification ts of alleged invention. The Patent and An imaging cell is provided with uniform spacing between substrates by vacuum evaporation of photoconductive or metallic material upon one cell substrate to form spacers during fabrication of the cell. In a, preferred embodiment, auelectrooptic cell comprises a bottom electrode (conductii/c, semi-transparent coating 2 on substrate 1), an ovcr'coating oi pfiotocouductiyc arsenic triselenide 3; four or more arsenic tris elenide posts i -yacuum evaporated upon the arsenic t riselenide photoconductive layer 3 and uniformly spaced along the edge of the photoconductivc layer 3; end, a layer of liquid crystallinematcrial residing on the photocoi ct'iyeia yer' 3 and a top electrode (conductive, semi-transparent coating 5 on substrate 6) in contact with the layer '7 of liquid crystalline material and residing on the arsenic trisclenidc spacers 4. The improved uniformity of spacing can be applied to any device, with or Without a photoconductive layer, in which uniformity of imaging layer thickness is desired.
US54061875 1975-01-13 1975-01-13 Isexrch room Pending UST940016I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US54061875 UST940016I4 (en) 1975-01-13 1975-01-13 Isexrch room

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54061875 UST940016I4 (en) 1975-01-13 1975-01-13 Isexrch room

Publications (1)

Publication Number Publication Date
UST940016I4 true UST940016I4 (en) 1975-11-04

Family

ID=24156240

Family Applications (1)

Application Number Title Priority Date Filing Date
US54061875 Pending UST940016I4 (en) 1975-01-13 1975-01-13 Isexrch room

Country Status (1)

Country Link
US (1) UST940016I4 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040047A (en) 1974-06-14 1977-08-02 Thomson-Csf Erasable thermo-optic storage display of a transmitted image
US4655549A (en) 1984-02-27 1987-04-07 Nippondenso Co., Ltd. Automatic antidazzle semitransparent mirror
US20220276235A1 (en) * 2019-07-18 2022-09-01 Essenlix Corporation Imaging based homogeneous assay

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040047A (en) 1974-06-14 1977-08-02 Thomson-Csf Erasable thermo-optic storage display of a transmitted image
US4655549A (en) 1984-02-27 1987-04-07 Nippondenso Co., Ltd. Automatic antidazzle semitransparent mirror
US20220276235A1 (en) * 2019-07-18 2022-09-01 Essenlix Corporation Imaging based homogeneous assay

Similar Documents

Publication Publication Date Title
Silver et al. Characterization of the valence and conduction band levels of n= 1 2D perovskites: a combined experimental and theoretical investigation
CN1107696C (en) Liquid crystal atomic beam arrangement method
US3856647A (en) Multi-layer control or stress in thin films
JP2799441B2 (en) Active matrix liquid crystal screen
US4149885A (en) Method of making electroluminescent display panel with enlarged active display areas
UST940016I4 (en) Isexrch room
EP1568069A2 (en) Active matrix backplane for controlling controlled elements and method of manufacture thereof
US7800724B2 (en) Liquid crystal display panel and manufacturing method thereof
DE69305141T2 (en) Process for the formation of a transparent conductive film
Drozdov et al. Direct Imaging of Current‐Induced Transformation of a Perovskite/Electrode Interface
von Soosten et al. On the emergence of conductivity at SrTiO3-based oxide interfaces–an in-situ study
JP2013062185A (en) Transparent conductive film forming method
JP5274753B2 (en) Method for forming Pb-containing crystal thin film
DE3609503A1 (en) HEATING RESISTANCE ELEMENT AND HEATING RESISTANCE USING THE SAME
Kargar et al. Design of capacitive Frisch grid TlBr detectors for radionuclide identification
CN109994426B (en) Array substrate and preparation method thereof
JPS63177472A (en) thin film transistor
JPS567480A (en) Film transistor
US3832298A (en) Method for producing a photoconductive element
CN206516632U (en) A kind of display base plate, display panel and coating apparatus
JPS54151843A (en) Substrate for photosensitive material for zerography
Ellis On the resistance of cadmium selenide films
DE2125080A1 (en) Process for the formation of a metal oxide on a metal support
DE1254428B (en) Process for the production of photosensitive lead selenide layers by vapor deposition in a vacuum
CN106129103A (en) A kind of display base plate, its manufacture method, display floater and coating apparatus