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USD743355S1 - Light-emitting diode unit - Google Patents

Light-emitting diode unit Download PDF

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Publication number
USD743355S1
USD743355S1 US29/497,212 US201429497212F USD743355S US D743355 S1 USD743355 S1 US D743355S1 US 201429497212 F US201429497212 F US 201429497212F US D743355 S USD743355 S US D743355S
Authority
US
United States
Prior art keywords
light
emitting diode
diode unit
view
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/497,212
Inventor
Hsin-Ying Wang
Chien-Kai Chung
Yu-Ting Huang
Tsun-Kai Ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to US29/497,212 priority Critical patent/USD743355S1/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHUNG, CHIEN-KAI, HUANG, YU-TING, KO, TSUN-KAI, WANG, HSIN-YING
Application granted granted Critical
Publication of USD743355S1 publication Critical patent/USD743355S1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Description

FIG. 1 is a perspective view of a light-emitting diode unit showing our new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top plan view thereof with the light-emitting diode unit being inverted; and,
FIG. 8 is a bottom plan view thereof.
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

Claims (1)

    CLAIM
  1. The ornamental design for a light-emitting diode unit, as shown and described.
US29/497,212 2014-07-22 2014-07-22 Light-emitting diode unit Active USD743355S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/497,212 USD743355S1 (en) 2014-07-22 2014-07-22 Light-emitting diode unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/497,212 USD743355S1 (en) 2014-07-22 2014-07-22 Light-emitting diode unit

Publications (1)

Publication Number Publication Date
USD743355S1 true USD743355S1 (en) 2015-11-17

Family

ID=54434954

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/497,212 Active USD743355S1 (en) 2014-07-22 2014-07-22 Light-emitting diode unit

Country Status (1)

Country Link
US (1) USD743355S1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD770397S1 (en) * 2014-07-22 2016-11-01 Epistar Corporation Light-emitting diode unit
USD795206S1 (en) * 2015-11-17 2017-08-22 Epistar Corporation Light-emitting diode array
USD888009S1 (en) * 2019-01-03 2020-06-23 Ningbo Gecen Promotion & Gift Co., Ltd. Ear phone
USD1012330S1 (en) * 2020-11-18 2024-01-23 Epistar Corporation Light-emitting diode device

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080210972A1 (en) * 2007-01-03 2008-09-04 Samsung Electro-Mechanics Co., Ltd. Nitride-based semiconductor light emitting diode
US7795610B2 (en) * 2008-05-15 2010-09-14 Epivalley Co., Ltd. Semiconductor light emitting device
USD644188S1 (en) * 2010-08-12 2011-08-30 Epistar Corporation Light emitting diode array
US8076688B2 (en) * 2006-09-25 2011-12-13 Seoul Opto Device Co., Ltd. Light emitting diode having extensions of electrodes for current spreading
US8188493B2 (en) * 2010-09-14 2012-05-29 Formosa Epitaxy Incorporation Light emitting diode with independent electrode patterns
USD674356S1 (en) * 2011-02-01 2013-01-15 Nichia Corporation Light emitting diode chip
US8378373B2 (en) * 2009-04-09 2013-02-19 Huga Optotech Inc. Light-emitting device
USD681567S1 (en) * 2012-01-19 2013-05-07 Epistar Corporation Light-emitting diode
USD681570S1 (en) * 2012-04-27 2013-05-07 Epistar Corporation Light-emitting diode
US8466487B2 (en) * 2010-07-23 2013-06-18 Nichia Corporation Light emitting element with extended electrodes structure
USD687396S1 (en) * 2012-09-06 2013-08-06 Epistar Corporation Light-emitting diode array
US8525212B2 (en) * 2009-12-29 2013-09-03 Seoul Opto Device Co., Ltd. Light emitting diode having electrode extensions
US8541806B2 (en) * 2009-12-14 2013-09-24 Seoul Opto Device Co., Ltd. Light emitting diode having electrode pads
US8680559B2 (en) * 2009-11-16 2014-03-25 Seoul Opto Device Co., Ltd. Light emitting diode having electrode extensions for current spreading
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
US9070834B2 (en) * 2013-06-18 2015-06-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8076688B2 (en) * 2006-09-25 2011-12-13 Seoul Opto Device Co., Ltd. Light emitting diode having extensions of electrodes for current spreading
US20080210972A1 (en) * 2007-01-03 2008-09-04 Samsung Electro-Mechanics Co., Ltd. Nitride-based semiconductor light emitting diode
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
US7795610B2 (en) * 2008-05-15 2010-09-14 Epivalley Co., Ltd. Semiconductor light emitting device
US8378373B2 (en) * 2009-04-09 2013-02-19 Huga Optotech Inc. Light-emitting device
US8680559B2 (en) * 2009-11-16 2014-03-25 Seoul Opto Device Co., Ltd. Light emitting diode having electrode extensions for current spreading
US8541806B2 (en) * 2009-12-14 2013-09-24 Seoul Opto Device Co., Ltd. Light emitting diode having electrode pads
US8525212B2 (en) * 2009-12-29 2013-09-03 Seoul Opto Device Co., Ltd. Light emitting diode having electrode extensions
US8466487B2 (en) * 2010-07-23 2013-06-18 Nichia Corporation Light emitting element with extended electrodes structure
USD644188S1 (en) * 2010-08-12 2011-08-30 Epistar Corporation Light emitting diode array
US8188493B2 (en) * 2010-09-14 2012-05-29 Formosa Epitaxy Incorporation Light emitting diode with independent electrode patterns
USD674356S1 (en) * 2011-02-01 2013-01-15 Nichia Corporation Light emitting diode chip
USD681567S1 (en) * 2012-01-19 2013-05-07 Epistar Corporation Light-emitting diode
USD681570S1 (en) * 2012-04-27 2013-05-07 Epistar Corporation Light-emitting diode
USD687396S1 (en) * 2012-09-06 2013-08-06 Epistar Corporation Light-emitting diode array
US9070834B2 (en) * 2013-06-18 2015-06-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD770397S1 (en) * 2014-07-22 2016-11-01 Epistar Corporation Light-emitting diode unit
USD795206S1 (en) * 2015-11-17 2017-08-22 Epistar Corporation Light-emitting diode array
USD888009S1 (en) * 2019-01-03 2020-06-23 Ningbo Gecen Promotion & Gift Co., Ltd. Ear phone
USD1012330S1 (en) * 2020-11-18 2024-01-23 Epistar Corporation Light-emitting diode device

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