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US9588175B2 - Semiconductor device inspection device and semiconductor device inspection method - Google Patents

Semiconductor device inspection device and semiconductor device inspection method Download PDF

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Publication number
US9588175B2
US9588175B2 US14/440,175 US201314440175A US9588175B2 US 9588175 B2 US9588175 B2 US 9588175B2 US 201314440175 A US201314440175 A US 201314440175A US 9588175 B2 US9588175 B2 US 9588175B2
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frequency band
signal
measurement
detection signal
semiconductor device
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US20150276865A1 (en
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Tomonori Nakamura
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/07—Non contact-making probes
    • G01R1/071—Non contact-making probes containing electro-optic elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Definitions

  • the present invention relates to a semiconductor device inspection system and a semiconductor device inspection method.
  • an optical probing technology referred to as electro optical probing (EOP) or electro-optical frequency mapping (EOFM) is known.
  • EOP electro optical probing
  • EOFM electro-optical frequency mapping
  • the optical probing technology light emitted from a light source is irradiated an integrated circuit, and the light reflected by the integrated circuit is detected by an optical sensor to acquire a detection signal. Then, in the acquired detection signal, a desired frequency is selected, and amplitude energy thereof is displayed as time progression or two-dimensional mapping is displayed. Accordingly, a position of the circuit operated at a desired frequency can be specified.
  • Patent Literature 1 Japanese Unexamined Patent Application, First Publication No. 2007-64975
  • Patent Literature 2 Japanese Unexamined Patent Application, First Publication No. 2001-255354
  • Patent Literature 3 Japanese Unexamined Patent Application, First Publication No. 2010-271307
  • S/N is defined by shot noise of the reflected light, excess noise of the light source, thermal noise of the optical sensor, and so on. For this reason, in order to secure sufficient S/N, it is necessary to extend a scan time or increase a quantity of light while using a stable light source.
  • the shot noise cannot be fundamentally removed, and a shot noise component cannot be prevented from overlapping a measurement result as a pattern image.
  • a shot noise component in proportion to a square root of the quantity of light, an excess noise component in proportion to the quantity of light also overlaps the measurement result. Accordingly, it is difficult to remove the shot noise and the excess noise in image processing of a simple pattern image.
  • the present invention is directed to provide a semiconductor device inspection system and a semiconductor device inspection method that are capable of reducing a measurement time and attempting high precision of a measurement result.
  • a semiconductor device inspection system includes a light generating unit for generating light to be irradiated a semiconductor device serving as a device under test; a light detecting unit for detecting the light reflected by the semiconductor device when the light generated from the light generating unit is irradiated the semiconductor device and outputting a detection signal; a frequency band setting unit for setting a measurement frequency band and a reference frequency band with respect to the detection signal; a signal generating unit for generating a measurement signal from the detection signal in the measurement frequency band and for generating a reference signal from the detection signal in the reference frequency band; and a signal acquisition unit for by calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, when a level of the detection signal is calculated based on power, the frequency band setting unit sets the reference frequency band to a frequency domain in which the level is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.
  • the measurement signal and the reference signal are generated based on the detection signal in the measurement frequency band and the detection signal in the reference frequency band detected at the same timing.
  • the reference frequency band is set to the frequency domain in which the level is lower than the level obtained by adding 3 decibels to the white noise level serving as the reference.
  • the analysis signal acquired by calculating the difference between the measurement signal and the reference signal is a signal from which shot noise, excess noise, and so on, are removed.
  • the detection signal in the measurement frequency band and the detection signal in the reference frequency band are detected at the same timing, in comparison with the case in which these are detected at separate timings, the measurement time can be reduced.
  • the detection signal in the measurement frequency band and the detection signal in the reference frequency band are detected under the same condition, in comparison with the case in which these are detected under separate conditions, high precision of the measurement result can be attempted.
  • the frequency band setting unit may set the reference frequency band to the frequency domain having a frequency higher than the measurement frequency band. According to the configuration, an influence of the 1/F noise having a tendency to appear in a relatively low frequency domain can be suppressed from being applied to the detection signal in the measurement frequency band.
  • the frequency band setting unit may set the reference frequency band to include a frequency of a system noise included in the measurement frequency band. According to the configuration, as the difference between the measurement signal and the reference signal is calculated, the system noise can be removed from the analysis signal.
  • the semiconductor device inspection system may further include an electrical signal application unit for applying a first electrical signal having a first modulation frequency to the semiconductor device, wherein the frequency band setting unit sets the measurement frequency band to include a frequency that is a natural number times the first modulation frequency. According to the configuration, setting of the measurement frequency band can be optimally performed.
  • the electrical signal application unit may apply a second electrical signal having a second modulation frequency different from the first modulation frequency to the semiconductor device together with the first electrical signal
  • the frequency band setting unit may set the measurement frequency band to include a frequency that is a natural number times the first modulation frequency
  • set the reference frequency band to include a frequency that is a natural number times the second modulation frequency
  • the semiconductor device inspection system may further include a first power source for operating the light generating unit; and a second power source separately installed from the first power source and for operating the light detecting unit.
  • a first power source for operating the light generating unit
  • a second power source separately installed from the first power source and for operating the light detecting unit.
  • the signal generating unit may include a spectrum analyzer for generating the measurement signal from the detection signal in the measurement frequency band and generating the reference signal from the detection signal in the reference frequency band.
  • the signal generating unit may include a first lock-in amplifier for generating the measurement signal from the detection signal in the measurement frequency band, and a second lock-in amplifier for generating the reference signal from the detection signal in the reference frequency band.
  • the signal generating unit may include a first spectrum analyzer for generating the measurement signal from the detection signal in the measurement frequency band, and a second spectrum analyzer for generating the reference signal from the detection signal in the reference frequency band.
  • a semiconductor device inspection system includes a light generating unit for generating light to be irradiated a semiconductor device serving as a device under test; a light detecting unit for detecting the light reflected by the semiconductor device and outputting a detection signal when the light generated from the light generating unit is irradiated the semiconductor device; a frequency band setting unit for setting a measurement frequency band and a reference frequency band with respect to the detection signal; a signal generating unit for generating a measurement signal from the detection signal in the measurement frequency band and generating a reference signal from the detection signal in the reference frequency band; and a signal acquisition unit for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, when a level of the detection signal is calculated based on amplitude energy, the frequency band setting unit sets the reference frequency band to a frequency domain in which the level is lower than a level obtained by adding 6 decibels to a white noise level serving as a reference.
  • a semiconductor device inspection method includes a light detection step of irradiating a semiconductor device serving as a device under test with light, detecting the light reflected by the semiconductor device and outputting a detection signal; a frequency band setting step of setting a measurement frequency band and a reference frequency band with respect to the detection signal; a signal generating step of generating a measurement signal from the detection signal in the measurement frequency band and generating a reference signal from the detection signal in the reference frequency band; and a signal acquisition step of calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, in the frequency band setting step, when a level of the detection signal is calculated based on power, the reference frequency band is set to a frequency domain in which the level is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.
  • a semiconductor device inspection method includes a light detection step of irradiating a semiconductor device serving as a device under test with light, detecting the light reflected by the semiconductor device and outputting a detection signal; a frequency band setting step of setting a measurement frequency band and a reference frequency band with respect to the detection signal; a signal generating step of generating a measurement signal from the detection signal in the measurement frequency band and generating a reference signal from the detection signal in the reference frequency band; and a signal acquisition step of calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, in the frequency band setting step, when a level of the detection signal is calculated based on amplitude energy, the reference frequency band is set to a frequency domain in which the level is lower than a level obtained by adding 6 decibels to a white noise level serving as a reference.
  • the semiconductor device inspection system and the semiconductor device inspection method that are capable of reducing a measurement time and achieving high precision of a measurement result.
  • FIG. 1 is a configuration view of a semiconductor device inspection system of an embodiment of the present invention
  • FIG. 2 is a graph showing a frequency property of a detection signal for describing a first setting example of a measurement frequency band and a reference frequency band in the semiconductor device inspection system of FIG. 1 ;
  • FIG. 3 is a graph showing a frequency property of a detection signal for describing a frequency domain in which a reference frequency band can be set in the semiconductor device inspection system of FIG. 1 ;
  • FIG. 4 is a graph showing a frequency property of a detection signal when a system noise overlaps a white noise
  • FIG. 5 shows semiconductor device images based on a measurement signal, a reference signal and an analysis signal acquired by the semiconductor device inspection system of FIG. 1 ;
  • FIG. 6 is a graph showing a frequency property of a detection signal for describing a second setting example of the measurement frequency band and the reference frequency band in the semiconductor device inspection system of FIG. 1 ;
  • FIG. 7 is a graph showing a frequency property of a detection signal for describing a third setting example of the measurement frequency band and the reference frequency band in the semiconductor device inspection system of FIG. 1 ;
  • FIG. 8 shows a semiconductor device image based on an analysis signal acquired by the semiconductor device inspection system of FIG. 1 in the case of FIG. 7 ;
  • FIG. 9 is a configuration view of a semiconductor device inspection system of another embodiment of the present invention.
  • a semiconductor device inspection system 1 is a device for inspecting a semiconductor device 10 , for example, specifying a place in which an abnormality occurs in the semiconductor device 10 serving as a device under test (DUT), and so on.
  • the semiconductor device 10 there are provided an integrated circuit having a PN junction such as a transistor or the like (for example, a small scale integrated (SSI) circuit, a medium scale integrated (MSI) circuit, a large scale integrated (LSI) circuit, a very large scale integrated (VLSI) circuit, an ultra large scale integrated (ULSI) circuit, and a giga scale integrated (GSI) circuit), a MOS transistor for large current/high pressure, a bipolar transistor, and so on.
  • the semiconductor device 10 may be a semiconductor device in which modulation is applied to a substrate by heat.
  • the semiconductor device inspection system 1 includes a laser beam source (a light generating unit) 2 .
  • the laser beam source 2 is operated by a first power source 3 , and emits light to be irradiated the semiconductor device 10 .
  • the light emitted from the laser beam source 2 is optically guided to a scan optical system 7 via a polarization preservation single mode optical fiber 5 for probe light.
  • the scan optical system 7 has a scan head 8 and a lens system 9 . Accordingly, the light optically guided to the scan optical system 7 is imaged on a predetermined position of the semiconductor device 10 , and an irradiation zone of the light is two-dimensionally scanned with respect to the semiconductor device 10 . Further, the scan optical system 7 and the semiconductor device 10 are disposed in a black box 6 .
  • the light reflected by the semiconductor device 10 when the light emitted from the laser beam source 2 is irradiated the semiconductor device 10 is optically guided to an optical sensor (a light detecting unit) 12 via an optical fiber 11 for optical feedback.
  • the optical sensor 12 is operated by a second power source 13 installed separately from the first power source 3 , and detects the reflected light to output a detection signal.
  • the detection signal output from the optical sensor 12 is input into a spectrum analyzer (a signal generating unit) 15 via an amplifier 14 .
  • a spectrum analyzer 15 is electrically coupled to a control device 18 via a frequency band setting unit 16 and a signal acquisition unit 17 .
  • the control device 18 forms a semiconductor device image based on an analysis signal acquired by the signal acquisition unit 17 , and displays the semiconductor device image on a display device 19 .
  • a laser scan controller 21 is electrically coupled to the control device 18 .
  • the laser scan controller 21 controls the laser beam source 2 and the scan optical system 7 .
  • a tester unit (an electrical signal application unit) 22 including a tester, a pulse generator and a power source is electrically coupled to the spectrum analyzer 15 .
  • the tester unit 22 applies an electrical signal having a predetermined modulation frequency to the semiconductor device 10 . Accordingly, the semiconductor device 10 is driven upon inspection.
  • the frequency band setting unit 16 sets a measurement frequency band FR 1 and a reference frequency band FR 2 with respect to the detection signal input into the spectrum analyzer 15 .
  • the measurement frequency band FR 1 is a frequency band including a frequency of a measurement signal S (a frequency N times (N is a natural number) a modulation frequency of an electrical signal applied to the semiconductor device 10 ).
  • the reference frequency band FR 2 is a frequency band set to remove the noise from the detection signal in the measurement frequency band FR 1 .
  • the frequency band setting unit 16 sets the reference frequency band FR 2 to a frequency domain.
  • the white noise level L 1 serving as the reference is a white noise level generated in the measurement frequency band FR 1 when light is irradiated a predetermined zone (a measurement zone or a reference zone) of the semiconductor device 10 and the light reflected by the predetermined zone is detected, in a state in which the semiconductor device 10 is not driven (i.e., in a state in which an electrical signal is not input from the tester unit 22 ).
  • the frequency band setting unit 16 can previously set a zone in which the reference frequency band FR 2 is set, with no need to detect the white noise level L 1 serving as the reference and the frequency domain FD 1 for setting the reference frequency band FR 2 with each measurement. In a first example shown in FIG.
  • the frequency band setting unit 16 sets the reference frequency band FR 2 to the frequency domain FD 1 having a frequency higher than the measurement frequency band FR 1 . This is because, as shown in FIG. 3 , there is a tendency for a frequency domain FD 2 in which 1/F noise appears to be in a frequency domain having a frequency lower than the measurement frequency band FR 1 .
  • the spectrum analyzer 15 generates a measurement signal from the detection signal in the measurement frequency band FR 1 , and generates a reference signal from the detection signal in the reference frequency band FR 2 . In this way, the spectrum analyzer 15 can simultaneously perform generation of signals in the plurality of frequency bands.
  • a cross domain analyzer from Advantest Corp. is provided as such a spectrum analyzer.
  • the signal acquisition unit 17 acquires an analysis signal as a difference between the generated measurement signal and the reference signal is calculated by the spectrum analyzer 15 . Accordingly, the analysis signal from which the shot noise, the excess noise, and so on, are removed can be acquired.
  • S/N is defined by a system noise such as a system noise N 1 related to the optical sensor 12 , a system noise N 2 related to the laser beam source 2 , a system noise N 3 related to a circuit operation, and so on, in addition to the white noise such as the shot noise of the reflected light, the excess noise of the laser beam source 2 , the thermal noise of the optical sensor 12 , and so on.
  • the shot noise is shown as a current noise i sn , and is represented as the following equation when an electric charge of electrons is e, a light current is I D , a dark current is I d , and an observed frequency band is ⁇ f.
  • the excess noise is in proportion to a quantity of the light, and a multiplier thereof is varied according to the laser beam source 2 .
  • the shot noise and the excess noise are increased depending upon the quantity of the reflected light.
  • the shot noise is in proportion to a square root of the quantity of light
  • the excess noise is in proportion to the quantity of light.
  • the shot noise cannot be fundamentally removed, and the shot noise component cannot be prevented from overlapping the measurement result as the pattern image.
  • the excess noise component in proportion to the quantity of light also overlaps the measurement result, in addition to the shot noise component in proportion to the square root of the quantity of light. Accordingly, it is difficult to remove the shot noise and the excess noise in the image processing of the simple pattern image.
  • the optical probing technology of the related art in the detection signal of the reflected light, a signal of a predetermined frequency band is detected.
  • the amplitude image, the phase image and the IQ image obtained at this time are displayed on the display device, an operation state of the semiconductor device can be detected.
  • the image noise depending on strength of the reflected light from a surface of the semiconductor device overlaps the signal of the amplitude image, like the pattern image. For this reason, even when the signals are added to improve the S/N of the image, the image noise covers the signal without disappearing.
  • the generally used lock-in method an S/N improvement technique by acquisition of a frequency synchronized with respect to a pulse stream of a signal
  • the above-mentioned problems can be solved.
  • the system noise such as the system noise N 1 related to the optical sensor 12 , the system noise N 2 related to the laser beam source 2 , the system noise N 3 related to the circuit operation, and so on.
  • the system noises N 1 and N 2 caused by a digital power source such as a switching power source, a DD converter, and so on, are removed.
  • the laser beam source 2 , the optical sensor 12 , and so on are controlled from the outside without using the IC used to control the laser beam source 2 , the optical sensor 12 , and so on, the system noise N 3 related to the circuit operation is removed.
  • a range in which the measurement signal S is present is selected as a center frequency, and a bandwidth of the measurement frequency band FR 1 is set directly or as a time constant.
  • the bandwidth of the reference frequency band FR 2 is set directly or as a time constant to have the same bandwidth as the measurement frequency band FR 1 .
  • the power in the frequency of the measurement frequency band FR 1 is converted into the amplitude energy.
  • the power in the frequency of the reference frequency band FR 2 is also converted into the amplitude energy.
  • the mapping is performed based on the amplitude energy, as shown in FIG. 5( c ) , an optical signal map (corresponding to the semiconductor device image based on the above-mentioned analysis signal) modulated by a response of the semiconductor device 10 can be obtained in real time.
  • a semiconductor device inspection method including a light detection step of irradiating the semiconductor device 10 with light, detecting the light reflected by the semiconductor device 10 and outputting a detection signal, a frequency band setting step of setting the measurement frequency band FR 1 and the reference frequency band FR 2 with respect to the detection signal, a signal generating step of generating a measurement signal from the detection signal in the measurement frequency band FR 1 and generating a reference signal from the detection signal in the reference frequency band FR 2 , and a signal acquisition step of acquiring an analysis signal by calculating a difference between the measurement signal and the reference signal is performed.
  • the reference frequency band FR 2 when the level of the detection signal is calculated based on the power, the reference frequency band FR 2 is set to the frequency domain FD 1 in which the level is lower than the level L 2 obtained by adding 3 decibels to the white noise level L 1 serving as the reference.
  • the reference frequency band FR 2 when the level of the detection signal is calculated based on the amplitude energy, the reference frequency band FR 2 is set to the frequency domain FD 1 in which the level is lower than the level L 2 obtained by adding 6 decibels to the white noise level L 1 serving as the reference.
  • the measurement signal and the reference signal are generated based on the detection signal in the measurement frequency band FR 1 and the detection signal in the reference frequency band FR 2 detected at the same timing.
  • the reference frequency band FR 2 is set to the frequency domain FD 1 in which the level is lower than the level L 2 obtained by adding 3 decibels to the white noise level L 1 serving as the reference. Accordingly, the analysis signal acquired by calculating the difference between the measurement signal and the reference signal is in a state in which the shot noise, the excess noise, and so on, are removed.
  • the measurement time can be reduced.
  • the detection signal in the measurement frequency band FR 1 and the detection signal in the reference frequency band FR 2 are detected under the same condition, the measurement result can be obtained with higher precision than when these are detected under different conditions.
  • a cumulative time (a cumulative number) of a band filter or a detection signal is adjusted, sufficient signal strength in which the measurement signal exceeds the level L 2 can be secured.
  • the reference frequency band FR 2 is set to the frequency domain exceeding the level L 2 , when the difference between the measurement signal and the reference signal is taken, not only the noise component but also the signal component disappears.
  • the frequency band setting unit 16 sets the reference frequency band FR 2 to the frequency domain FD 1 in which the frequency is higher than the measurement frequency band FR 1 . Accordingly, an influence of the 1/F noise having a tendency to appear in a relatively low frequency domain can be suppressed from being applied to the detection signal in the measurement frequency band FR 1 .
  • the first power source 3 for the laser beam source 2 and the second power source 13 for the optical sensor 12 are separately installed. Accordingly, since there is no need to install the DD converter or the like that causes the system noise, occurrence of the system noise in the frequency domain FD 1 in which the reference frequency band FR 2 is set can be suppressed. In order to acquire the analysis signal from which the shot noise, the excess noise, and so on, are removed by calculating the difference between the measurement signal and the reference signal, since occurrence of the system noise in the frequency domain FD 1 in which the reference frequency band FR 2 is set needs to be suppressed, the configuration is extremely important.
  • the spectrum analyzer 15 capable of simultaneously performing generation of the signals in the plurality of frequency bands is used. Accordingly, the measurement signal and the reference signal can be efficiently generated based on the detection signal in the measurement frequency band FR 1 and the detection signal in the reference frequency band FR 2 detected at the same timing.
  • the setting of the measurement frequency band FR 1 and the reference frequency band FR 2 can be performed as will be described below.
  • a frequency property of the detection signal is displayed on the display device 19 , and a user can manually set the frequency bands FR 1 and FR 2 while checking the screen.
  • a peak frequency of the power can be set, the measurement frequency band FR 1 can be automatically set based on the peak frequency, and the reference frequency band FR 2 can be automatically set within a range deviated to an extent of the set frequency.
  • the modulation frequency of the electrical signal applied to the semiconductor device 10 is acquired, and the measurement frequency band FR 1 can be automatically set include the frequency N times (N is a natural number) the modulation frequency. In this case, the setting of the measurement frequency band FR 1 can be optimally performed.
  • the frequency-dependent noise generated by the laser beam source 2 can acquire the generated frequency.
  • the frequency-dependent noise generated by another device can be acquired, and thus the generated frequency can be acquired.
  • calculation of the difference between the measurement signal and the reference signal may be performed in each pixel, or may be performed in the entire screen.
  • the measurement frequency band FR 1 and the reference frequency band FR 2 are set to the two frequencies and calculation of the difference between the measurement signal and the reference signal is performed with respect to these, one signal with respect to an average can be displayed as a positive value and the other signal can be displayed as a negative value while removing the shot noise, the excess noise, and so on.
  • FIG. 6 is a graph showing a frequency property of a detection signal for describing a second setting example of the measurement frequency band FR 1 and the reference frequency band FR 2 .
  • the frequency band setting unit 16 sets the reference frequency band FR 2 to include the frequency of the system noise N included in the measurement frequency band FR 1 . That is, the measurement frequency band FR 1 and the reference frequency band FR 2 are set such that both include the system noise N. Accordingly, as the difference between the measurement signal and the reference signal are calculated, the system noise N can be removed from the analysis signal.
  • the technique is effective in a sample in which the reference signal cannot be obtained, a base clock is unstable, and RBW should be widened.
  • the measurement frequency band FR 1 and the reference frequency band FR 2 may be set not to include the frequency of the system noise N.
  • FIG. 7 is a graph showing a frequency property of a detection signal for describing a third setting example of the measurement frequency band FR 1 and the reference frequency band FR 2 .
  • the frequency band setting unit 16 sets the measurement frequency band FR 1 and the reference frequency band FR 2 based on the first modulation frequency of the first electrical signal E 1 and the second modulation frequency of the second electrical signal E 2 .
  • the measurement frequency band FR 1 is set to include a frequency N times (N is a natural number) the first modulation frequency of the first electrical signal E 1
  • the reference frequency band FR 2 is set to include a frequency N times (N is a natural number) the second modulation frequency of the second electrical signal E 2 .
  • the present invention is not limited to the embodiments.
  • the light generating unit that generates light to be irradiated the semiconductor device is not limited to the laser beam source 2 but may be another light source such as a super luminescent diode or the like.
  • heat instead of the electrical signal, heat may be applied to the semiconductor device 10 .
  • the measurement frequency band FR 1 is set to include the frequency N times (N is a natural number) the modulation frequency of the heat applied to the semiconductor device 10 .
  • N is a natural number
  • the semiconductor device inspection system 1 may include, instead of the spectrum analyzer 15 that can simultaneously perform generation of the signals of the plurality of frequency bands, a first spectrum analyzer (a signal generating unit) 15 A that generates a measurement signal from the detection signal in the measurement frequency band FR 1 , and a second spectrum analyzer (a signal generating unit) 15 B that generates a reference signal from the detection signal in the reference frequency band FR 2 .
  • the detection signal output from the amplifier 14 is branched off by a branch circuit 23 , and input into the spectrum analyzers 15 A and 15 B.
  • the semiconductor device inspection system 1 may include, instead of the spectrum analyzers 15 A and 15 B, a first lock-in amplifier (a signal generating unit) 24 A that generates a measurement signal from the detection signal in the measurement frequency band FR 1 , and a second lock-in amplifier (a signal generating unit) 24 B that generates a reference signal from the detection signal in the reference frequency band FR 2 .
  • a first lock-in amplifier a signal generating unit
  • a second lock-in amplifier a signal generating unit 24 B that generates a reference signal from the detection signal in the reference frequency band FR 2 .
  • the reference frequency band FR 2 may be set to a frequency domain higher than a maximum frequency of the frequency domain FD 2 in which 1/F noise appears and lower than a frequency N times (N is a natural number) the modulation frequency of the electrical signal applied to the semiconductor device 10 .
  • 1 . . . semiconductor device inspection system 2 . . . laser beam source (light generating unit), 3 . . . first power source, 10 . . . semiconductor device, 12 . . . optical sensor (light detecting unit), 13 . . . second power source, 15 . . . spectrum analyzer (signal generating unit), 15 A . . . first spectrum analyzer (signal generating unit), 15 B . . . second spectrum analyzer (signal generating unit), 16 . . . frequency band setting unit, 17 . . . signal acquisition unit, 22 . . . tester unit (electrical signal application unit), 24 A . . . first lock-in amplifier (signal generating unit), 24 B . . . second lock-in amplifier (signal generating unit)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160334459A1 (en) * 2013-02-01 2016-11-17 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
US11047792B2 (en) 2016-09-28 2021-06-29 Hamamatsu Photonics K.K. Semiconductor device inspection method and semiconductor device inspection apparatus

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6283501B2 (ja) 2013-11-12 2018-02-21 浜松ホトニクス株式会社 周波数解析装置及び周波数解析方法
JP6283507B2 (ja) 2013-11-29 2018-02-21 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
JP6391370B2 (ja) * 2014-08-29 2018-09-19 キヤノン株式会社 光ポンピング磁力計及び磁気センシング方法
TWI627418B (zh) * 2016-05-13 2018-06-21 南韓商英泰克普拉斯有限公司 半導體元件檢查裝置
US11150204B2 (en) 2017-12-27 2021-10-19 Photo Electron Soul Inc. Sample inspection device and sample inspection method
JP6611387B1 (ja) 2018-08-30 2019-11-27 浜松ホトニクス株式会社 半導体試料の検査装置及び検査方法
JP7554052B2 (ja) * 2020-01-31 2024-09-19 浜松ホトニクス株式会社 半導体故障解析装置
KR102773941B1 (ko) * 2020-02-18 2025-02-27 하마마츠 포토닉스 가부시키가이샤 반도체 고장 해석 장치 및 반도체 고장 해석 방법

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63218869A (ja) 1987-03-06 1988-09-12 Anritsu Corp スペクトラムアナライザ
JPH01169862A (ja) 1987-12-25 1989-07-05 Hitachi Ltd 荷電粒子線装置
JPH07260891A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd 電圧測定方法及び装置
JPH08101232A (ja) 1994-09-29 1996-04-16 Hamamatsu Photonics Kk 電圧測定装置
JPH1084250A (ja) 1996-09-09 1998-03-31 Omron Corp ノイズ除去フィルタ
JPH11133118A (ja) 1997-10-29 1999-05-21 Hamamatsu Photonics Kk 基板検査装置
JP2001255354A (ja) 2000-01-13 2001-09-21 Schlumberger Technol Inc パルス状レーザビームによる半導体集積回路の精査装置
JP2004144685A (ja) 2002-10-28 2004-05-20 Hitachi Ltd 半導体デバイス製造ラインにおける外観検査装置の機差調整方法及びそのシステム
JP2005109238A (ja) 2003-09-30 2005-04-21 Matsushita Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
WO2006011423A1 (ja) 2004-07-28 2006-02-02 Matsushita Electric Industrial Co., Ltd. 受信装置
JP2007064975A (ja) 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
US20070208222A1 (en) * 2004-11-10 2007-09-06 Olympus Corporation Endoscope shape detecting apparatus
WO2008143101A1 (ja) 2007-05-15 2008-11-27 Hamamatsu Foundation For Science And Technology Promotion メスバウア分光測定装置
CN101501516A (zh) 2005-10-11 2009-08-05 以色列商奥宝科技股份有限公司 根据光电导通的晶体管阵列电子测试
US7659981B2 (en) 2005-08-26 2010-02-09 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using polarization difference probing
JP2010271307A (ja) 2009-05-01 2010-12-02 Dcg Systems Inc レーザ電圧画像化状態マッピングのためのシステム及び方法
US20120019815A1 (en) * 2010-07-20 2012-01-26 Yokogawa Electric Corporation Multichannel photometric measurement apparatus
US20120025098A1 (en) * 2009-02-13 2012-02-02 Mitsui Engineering & Shipbuilding Co., Ltd. Fluorescence detection device and fluorescence detection method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000079248A1 (fr) * 1999-06-21 2000-12-28 Hamamatsu Photonics K.K. Spectrometre a ondes terahertz
US6478625B2 (en) * 2000-07-11 2002-11-12 Bernard R. Tolmie Electrical-optical hybrid connector
EP1743576B1 (en) * 2004-05-06 2018-01-24 Nippon Telegraph And Telephone Corporation Component concentration measuring device and method of controlling component concentration measuring device
JP3784823B1 (ja) * 2005-07-15 2006-06-14 国立大学法人徳島大学 距離測定装置、距離測定方法および距離測定プログラム
JP4420051B2 (ja) * 2007-03-28 2010-02-24 ソニー株式会社 レーザ光発生装置
KR101152614B1 (ko) * 2007-08-30 2012-06-05 미쯔이 죠센 가부시키가이샤 형광 공명 에너지 이동 검출 방법 및 장치
JP5187843B2 (ja) * 2008-09-01 2013-04-24 浜松ホトニクス株式会社 半導体検査装置及び検査方法
JP2012008261A (ja) * 2010-06-23 2012-01-12 Hamamatsu Photonics Kk 画像生成装置
US9279723B2 (en) * 2010-08-19 2016-03-08 Novatrans Group Sa Terahertz spectroscopy system and method
JP5595883B2 (ja) * 2010-11-29 2014-09-24 株式会社東芝 無線通信装置
JP6081380B2 (ja) * 2012-02-15 2017-02-15 オリンパス株式会社 レーザ走査型観察装置

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63218869A (ja) 1987-03-06 1988-09-12 Anritsu Corp スペクトラムアナライザ
JPH01169862A (ja) 1987-12-25 1989-07-05 Hitachi Ltd 荷電粒子線装置
JPH07260891A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd 電圧測定方法及び装置
JPH08101232A (ja) 1994-09-29 1996-04-16 Hamamatsu Photonics Kk 電圧測定装置
JPH1084250A (ja) 1996-09-09 1998-03-31 Omron Corp ノイズ除去フィルタ
JPH11133118A (ja) 1997-10-29 1999-05-21 Hamamatsu Photonics Kk 基板検査装置
JP2001255354A (ja) 2000-01-13 2001-09-21 Schlumberger Technol Inc パルス状レーザビームによる半導体集積回路の精査装置
JP2004144685A (ja) 2002-10-28 2004-05-20 Hitachi Ltd 半導体デバイス製造ラインにおける外観検査装置の機差調整方法及びそのシステム
JP2005109238A (ja) 2003-09-30 2005-04-21 Matsushita Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
WO2006011423A1 (ja) 2004-07-28 2006-02-02 Matsushita Electric Industrial Co., Ltd. 受信装置
CN1879337A (zh) 2004-07-28 2006-12-13 松下电器产业株式会社 接收装置
US20070208222A1 (en) * 2004-11-10 2007-09-06 Olympus Corporation Endoscope shape detecting apparatus
JP2007064975A (ja) 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
US7659981B2 (en) 2005-08-26 2010-02-09 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using polarization difference probing
CN101501516A (zh) 2005-10-11 2009-08-05 以色列商奥宝科技股份有限公司 根据光电导通的晶体管阵列电子测试
WO2008143101A1 (ja) 2007-05-15 2008-11-27 Hamamatsu Foundation For Science And Technology Promotion メスバウア分光測定装置
US20120025098A1 (en) * 2009-02-13 2012-02-02 Mitsui Engineering & Shipbuilding Co., Ltd. Fluorescence detection device and fluorescence detection method
JP2010271307A (ja) 2009-05-01 2010-12-02 Dcg Systems Inc レーザ電圧画像化状態マッピングのためのシステム及び方法
US20120019815A1 (en) * 2010-07-20 2012-01-26 Yokogawa Electric Corporation Multichannel photometric measurement apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160334459A1 (en) * 2013-02-01 2016-11-17 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
US10101383B2 (en) 2013-02-01 2018-10-16 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
US10191104B2 (en) * 2013-02-01 2019-01-29 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
US11047792B2 (en) 2016-09-28 2021-06-29 Hamamatsu Photonics K.K. Semiconductor device inspection method and semiconductor device inspection apparatus

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