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US9359668B2 - Feeder system and method for a vapor transport deposition system - Google Patents

Feeder system and method for a vapor transport deposition system Download PDF

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Publication number
US9359668B2
US9359668B2 US13/601,512 US201213601512A US9359668B2 US 9359668 B2 US9359668 B2 US 9359668B2 US 201213601512 A US201213601512 A US 201213601512A US 9359668 B2 US9359668 B2 US 9359668B2
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carrier gas
powder
flow
flow line
unit
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US13/601,512
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US20130058728A1 (en
Inventor
Gang Xiong
Feng Liao
Rick C. Powell
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JPMorgan Chase Bank NA
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First Solar Inc
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Publication of US20130058728A1 publication Critical patent/US20130058728A1/en
Assigned to JPMORGAN CHASE BANK, N.A. reassignment JPMORGAN CHASE BANK, N.A. SECURITY AGREEMENT Assignors: FIRST SOLAR, INC.
Assigned to JPMORGAN CHASE BANK, N.A. reassignment JPMORGAN CHASE BANK, N.A. CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT APPLICATION 13/895113 ERRONEOUSLY ASSIGNED BY FIRST SOLAR, INC. TO JPMORGAN CHASE BANK, N.A. ON JULY 19, 2013 PREVIOUSLY RECORDED ON REEL 030832 FRAME 0088. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT PATENT APPLICATION TO BE ASSIGNED IS 13/633664. Assignors: FIRST SOLAR, INC.
Priority to US15/163,321 priority patent/US20160265100A1/en
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Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT PATENT SECURITY AGREEMENT Assignors: FIRST SOLAR, INC.
Assigned to FIRST SOLAR, INC. reassignment FIRST SOLAR, INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Assignors: JPMORGAN CHASE BANK, N.A.
Assigned to FIRST SOLAR, INC. reassignment FIRST SOLAR, INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Assignors: JPMORGAN CHASE BANK, N.A.
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FIRST SOLAR, INC.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G53/00—Conveying materials in bulk through troughs, pipes or tubes by floating the materials or by flow of gas, liquid or foam
    • B65G53/04—Conveying materials in bulk pneumatically through pipes or tubes; Air slides
    • B65G53/16—Gas pressure systems operating with fluidisation of the materials

Definitions

  • Disclosed embodiments relate to the field of photovoltaic device production, and more particularly to a feeder system for a vapor transport deposition (VTD) system and methods of use thereof.
  • VTD vapor transport deposition
  • Vibratory powder feeders are designed to deliver raw material powder to the vaporizer unit.
  • raw semiconductor material powder is loaded into the feeder.
  • a controlled amount of carrier gas is directed into the feeder to facilitate the flow of powder.
  • the powder and carrier gas then flow to the vaporizer unit.
  • the carrier gas is typically inert and does not chemically react with the powder. The purpose of the carrier gas is to facilitate transport of the powder to the vaporizer unit.
  • FIG. 1 illustrates an example of a conventional vapor transport deposition system 11 for delivering and depositing a semiconductor material, for example, CdTe onto a substrate 13 , for example, a glass substrate used in the manufacture of thin film solar modules.
  • a vaporizer unit 15 has walls formed of a resistive material which can be heated by AC power source 29 and vaporizes CdTe semiconductor material powder received at opposite ends of vaporizer unit 15 through respective inlets 17 and 19 which receive the semiconductor material powder from respective vibratory powder feeders 21 and 23 .
  • Inert carrier gas sources 25 and 27 for example, Helium gas (He) sources, respectively provide a carrier gas to the powder feeders 21 and 23 to transport the semiconductor material through inlets 17 and 19 to the vaporizer unit which vaporizes the semiconductor material powder for deposition of the semiconductor material onto substrate 13 .
  • He Helium gas
  • More detailed examples of vapor transport deposition systems of the type illustrated in FIG. 1 can be found in U.S. Pat. Nos. 5,945,165, 6,037,241, and 7,780,787, all assigned to First Solar, Inc.
  • the heating of the vaporizer unit 15 is not uniform along its length because the vaporizer unit 15 is formed of three separate sections of resistivity material, e.g., SiC, which are connected together along the length of the vaporizer unit 15 .
  • a hot zone is provided by section 31 throughout most of the length of vaporizer unit 15
  • a lower temperature colder zone is provided at respective ends of vaporizer unit 15 by section 33 .
  • some of the vaporized semiconductor material condenses and accumulates in the colder zones as condensed semiconductor material 35 .
  • the carrier gas source 25 or 27 When the carrier gas source 25 or 27 is turned off during powder refills or for maintenance of one or both of the powder feeders 21 and 23 , the built up condensed semiconductor material 35 can resublimate and back diffuse into the inlets 17 and 19 causing a clog, as illustrated in FIG. 2B . Unclogging the inlets 17 and 19 is time consuming and costly.
  • the partial pressures of reactive species such as oxygen (O 2 ) and vaporized water (H 2 O)
  • the carrier gas sources 25 and 27 When one or both of the carrier gas sources 25 and 27 are then turned on, the gas ambient for coating deposition is different from what it was before one or both of the carrier gas source 25 and 27 was turned off. This produces an unstable flow field and gas composition. When flow of the carrier gas source 25 or 27 resumes, the unstable flow field and gas composition causes deposition variations on substrate 13 .
  • a dopant into the semiconductor material which can react with semiconductor material and form a vapor phase compound within vaporizer unit 15 during the deposition process.
  • a process gas such as feeder compressed dry air (O 2 )
  • O 2 feeder compressed dry air
  • Introduction of the dopant and process gas into vaporizer unit 15 can cause formation of a gas phase product and a solid phase product. While the gas can pass through the porous walls of vaporizer unit 15 for deposition on a substrate 13 ( FIG. 1 ), the solid can not and is confined within the vaporizer causing vaporizer pore clogging.
  • Controlling the flow of process gas into the vaporizer 15 provides a mechanism to adjust doping concentration by controlling the dopant, process gas reaction. This doping concentration control is important for the manufacturing process. Accordingly, a controlled flow of reaction gas and dopant which favors formation of a gaseous product over a solid product needs to be established and maintained to carry out doping of semiconductor depositions and avoid vaporizer pore clogging.
  • FIG. 1 is a schematic of a conventional vapor transport deposition (VTD) system with multiple vibratory powder feeders;
  • VTD vapor transport deposition
  • FIGS. 2A and 2B illustrate the internal operation of the vaporizer unit shown in FIG. 1 ;
  • FIG. 3 is a schematic diagram of an embodiment of a vapor transport deposition (VTD) system.
  • VTD vapor transport deposition
  • an improved feeder system and method which includes a carrier gas bypass line.
  • the carrier gas bypass line allows continuous flow of carrier gas to the vaporizer unit during refill or maintenance of an associated vibratory powder feeder. Continuous flow of carrier gas to the vaporizer unit prevents clogging of inlets into the vaporizer unit and maintains a stable flow field within the vaporizer unit.
  • the vibratory powder feeder may further include a process gas input flow line.
  • the process gas input flow line facilitates the flow of a process gas, such as, for example, feeder compressed dry air (FCDA), in addition to the typical inert carrier gas, into the vibratory powder feeder.
  • FCDA feeder compressed dry air
  • a combination of the process gas, the carrier gas and the powder then flows from the vibratory powder feeder to the vaporizer unit.
  • the improved feeder system may include a process gas input flow line for use during conventional VTD processes that include Si doping as noted above.
  • This process gas input flow line may be used with an embodiment having a carrier gas bypass line that allows continuous flow of carrier gas to the vaporizer unit during refill or maintenance of the vibratory powder feeder to prevent clogging of the inlets into the vaporizer unit.
  • an interlock system can also be provided in association with the embodiments described above.
  • the interlock system controls operation of key components of the vibratory powder feeder to prevent unintentional operation errors and to improve safety during refill and maintenance of the vibratory powder feeder.
  • FIG. 3 depicts the structures of each of the embodiments described above, used in combination.
  • FIG. 3 illustrates a carrier gas bypass flow line and associated structures, a process gas input flow line and associated structures, and an interlock system.
  • the carrier gas bypass flow line and process gas input flow line are used together in the FIG. 3 structure, each can be used without the other as well, and each can be used with or without the interlock system.
  • FIG. 3 illustrates a deposition system in which a vaporizer unit 1600 has inlets 1650 A, 1650 B at either end for receiving powdered material and gas flow from respective material and gas flow providers 1500 A, 1500 B.
  • Each of the providers 1500 A, 1500 B includes respective semiconductor material vibratory units 150 A, 150 B which hold a semiconductor material powder for flow into vaporizer unit 1600 .
  • Each of the providers 1500 A, 1500 B also includes respective carrier gas input flow lines 810 A, 810 B which receive a carrier gas through respective carrier gas mass flow controllers 800 A, 800 B. The carrier gas is provided to carrier gas mass flow controllers 800 A, 800 B at respective input lines 805 A, 805 B.
  • Each of the providers 1500 A, 1500 B further includes a respective carrier gas bypass flow line 850 A, 850 B which respectively receives bypass carrier gas from a carrier gas bypass mass flow controller 840 A, 840 B and which are connected at input sides to respective input lines 805 A, 805 B.
  • the carrier gas bypass input lines 850 A, 850 B are respectively connected to output lines 890 A, 890 B of the providers 1500 A, 1500 B through respective particle filters 880 A, 880 B.
  • the output lines also receive carrier gas and semiconductor material from vibratory units 150 A, 150 B through respective flow-valves 860 A, 860 B.
  • Flow-valves 860 A, 860 B may be shut-off valves which open or close to restrict or allow flow of carrier gas and semiconductor material from vibratory units 150 A, 150 B into output lines 890 A, 890 B.
  • Particle filters 880 A, 880 B prevent semiconductor material powder from back-streaming into carrier gas bypass input lines 850 A, 850 B.
  • the output lines 890 A, 890 B are respectively connected to vaporizer inlets 1650 A, 1650 B through flow-valves 895 A, 895 B.
  • Flow-valves 895 A, 895 B may be shut-off valves which open or close to restrict or allow flow of carrier gas and/or semiconductor material from output lines 890 A, 890 B into vaporizer inlets 1650 A, 1650 B.
  • the raw material that is processed by the powder vibratory units 150 A, 150 B as a powder can be a semiconductor, for example, a transition metal (Group 12) and a chalcogenide (Group 18) such as cadmium sulfide (CdS) or cadmium telluride (CdTe).
  • Powders can include a plurality of particles having average sizes in a range of, for example, about 10 to about 600 micrometers. Additional materials that can be utilized to form a semiconductor film may be used with these systems and methods. Dopants may also be useful to enhance the deposition and properties of the deposited product. Suitable dopants may include silicon (Si).
  • the inert carrier gases input in lines 805 A, 805 B can be connected to a helium gas source, which has been found to increase the glass temperature range and the pressure range that provide film characteristics such as deposition density and good bonding.
  • the inert carrier gas can also be another inert gas such as nitrogen, neon, argon or krypton, or combinations of these gases. It is also possible for the carrier gas to be mixed with and include some amount of a reactive gas such as oxygen that can advantageously affect growth properties of the material.
  • a flow rate of about 0.3 to about 10 slpm of the carrier gas has been determined to be sufficient to facilitate flow of the powder out of the powder vibratory units 150 A, 150 B and to the vaporizer unit 1600 .
  • FIG. 3 also illustrates an embodiment where a dopant material, such as Si, may be included in the powder mix which is fed to vaporizer unit 1600 .
  • a process gas is added to the carrier gas in respective carrier gas flow lines 810 A, 810 B.
  • the process gas is feeder compressed dry air (FCDA) which enters the providers 1500 A, 1500 B at respective inlets 807 A, 807 B through respective process gas mass flow controllers 820 A, 820 B.
  • FCDA feeder compressed dry air
  • the outputs of process gas mass flow controllers 820 A, 820 B flow into respective vibratory units 150 A, 150 B through respective valves 830 A, 830 B.
  • the process gas can also be vaporized water.
  • the process gas is FCDA, a flow rate of about 0 to about 20 sccm of the process gas has been determined to be sufficient to produce a desired mix of SiTe X (gas) and SiO 2 (solid). If the process gas is vaporized water in a carrier gas, a flow rate of about 0.3 to about 10 slpm of the mixture of the process gas and the carrier gas has been determined to be sufficient.
  • a vibratory powder feeder system may further include an interlock system.
  • An interlock system can control certain components of the vibratory powder feeder.
  • the interlock system can be connected to at least any two of the components of the vibratory powder feeder, including, but not limited to, the respective semiconductor material vibratory units 150 A, 150 B, the respective carrier gas mass flow controllers 800 A, 800 B, the respective process gas mass flow controllers 820 A, 820 B, the respective carrier gas bypass mass flow controllers 840 A, 840 B and the respective valves 830 A, 830 B.
  • the interlock system can use a hardware based control module or a software based control module to control the components of the vibratory powder feeder.
  • the certain conditions that can determine whether the interlock device activates or deactivates a component of the vibratory powder feeder can include another component's activation (on/off), pressure within another component as measured by a sensor in the component, temperature within another component as measure by a sensor in the component and flow rate within another component as measured by a sensor within the component.
  • the vibratory powder feeder system includes an interlock system 1700 .
  • the interlock system 1700 includes multiple control modules 1710 A, 1710 B, 1710 C, 1710 D connected to components of the providers 1500 A, 1500 B.
  • Each control module 1710 A, 1710 B, 1710 C, 1710 D connects to a separate component of the providers 1500 A, 1500 B.
  • the first control module 1710 A is connected to the process gas mass flow controller 820 A
  • the second control module 1710 B is connected to the process gas mass flow controller 820 B
  • the third control module 1710 C is connected to the first carrier gas bypass mass flow controller 840 A
  • the forth control module 1710 D is connected to the second carrier gas bypass mass flow controller 840 B.
  • control modules 1710 A, 1710 B, 1710 C and 1710 D may be combined into fewer control modules or into a single control module which provides the functions of each of the control modules 1710 A, 1710 B, 1710 C and 1710 D. Also, the function of control modules 1710 A, 1710 B, 1710 C and 1710 D can be implemented in hardware, software or a combination of each.
  • Control modules 1710 A, 1710 B respectively control the process gas mass flow controllers 820 A, 820 B using sensors which respectively sense (a) whether the respective carrier gas mass flow controllers 800 A, 800 B are on or off and (b) whether respective flow-valves 860 A, 860 B are on or off. Control modules 1710 A, 1710 B will turn off the process gas mass flow controllers 820 A, 820 B when the respective carrier gas mass flow controllers 800 A, 800 B are off or when respective flow-valves 860 A, 860 B are off.
  • Control modules 1710 C, 1710 D respectively control the carrier bypass mass flow controllers 840 A, 840 B and sense (a) through a pressure sensor the pressure in carrier gas flow lines 810 A, 810 B or carrier gas bypass flow line 850 A, 850 B, (b) the on or off condition of respective flow-valves 860 A, 860 B, and (c) the temperature of the vaporizer unit 1600 .
  • Control modules 1710 C, 1710 D respectively turn off the bypass mass flow controllers 840 A, 840 B when the pressure in respective output lines 890 A, 890 B exceed a predetermined value or when the respective flow-valve 860 A, 860 B is on.
  • control modules 1710 C, 1710 D can also respectively turn off the material vibratory units 150 A, 150 B when the temperature of the vaporizer unit 1600 is less than a predetermined value or control modules 1710 C, 1710 D can respectively turn off mass flow controller 800 a , 800 b when a manual input or a digital/analog signal indicates that a technician is checking the vaporizer unit 1600 for leaks.
  • the carrier gas bypass mass flow controllers 840 A, 840 B and associated supply lines 850 A, 850 B are used to supply carrier gas to vaporizer inlets 1650 A, 1650 B when an associated vibratory unit 150 A, 150 B is shut down for purposes of maintenance or refill of powder material. This mitigates against the backflow and clogging problem described above with regards to FIGS. 2A and 2B .
  • the mass flow controllers 820 A, 820 B and associated input lines 810 A, 810 B supply an appropriate amount of process gas to the vibratory units 150 A, 150 B to attain a desired gas to solid ratio of the dopant material within the vaporizer 1600 .

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
US13/601,512 2011-09-02 2012-08-31 Feeder system and method for a vapor transport deposition system Active 2033-05-25 US9359668B2 (en)

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US15/163,321 US20160265100A1 (en) 2011-09-02 2016-05-24 Feeder system and method for a vapor transport deposition system

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US13/601,512 US9359668B2 (en) 2011-09-02 2012-08-31 Feeder system and method for a vapor transport deposition system

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US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors

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CN107254675B (zh) * 2017-06-07 2019-07-09 华中科技大学 一种纳米颗粒空间原子层沉积连续包覆装置及方法
CN114040808B (zh) * 2019-03-13 2023-03-24 梅托克斯技术公司 用于薄膜沉积的固体前体进料系统

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