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US6436614B1 - Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate - Google Patents

Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate Download PDF

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Publication number
US6436614B1
US6436614B1 US09/884,616 US88461601A US6436614B1 US 6436614 B1 US6436614 B1 US 6436614B1 US 88461601 A US88461601 A US 88461601A US 6436614 B1 US6436614 B1 US 6436614B1
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Prior art keywords
substrate
optical crystal
dielectric constant
low dielectric
optical
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Expired - Fee Related
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US09/884,616
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US20020048728A1 (en
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Feng Zhou
Seng-Tiong Ho
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PHOSISTOR TECHNOLOGIES Inc
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PHOSISTOR TECHNOLOGIES Inc
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Priority to US09/884,616 priority Critical patent/US6436614B1/en
Priority to PCT/US2001/042711 priority patent/WO2002035579A2/fr
Priority to AU2002211916A priority patent/AU2002211916A1/en
Priority to TW090125919A priority patent/TW498462B/zh
Publication of US20020048728A1 publication Critical patent/US20020048728A1/en
Assigned to PHOSISTOR TECHNOLOGIES, INCORPORATED reassignment PHOSISTOR TECHNOLOGIES, INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HO, SENG-TIONG, ZHOU, FENG
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1059—Splitting sheet lamina in plane intermediate of faces

Definitions

  • the present invention in general, relates to methods for the formation of optical crystal layers and, in particular, to methods for the formation of thin optical crystal layers on a substrate.
  • Conventional electro-optical devices e.g., optical switches, optical modulators, optical polarizers, optical amplifiers, optical lasers, etc.
  • bulk optical crystal layers e.g., a lithium niobate [LiNbO 3 ] single crystal wafer
  • the manufacturing of such conventional electro-optical devices often includes forming waveguide regions in the bulk optical crystal layer using titanium diffusion or proton exchange and coating the bulk optical crystal layer with a dielectric buffer layer (e.g., a silicon dioxide [SiO 2 ] buffer layer).
  • a dielectric buffer layer e.g., a silicon dioxide [SiO 2 ] buffer layer
  • the conventional electro-optical devices can suffer such drawbacks as large Radio-Frequency (RF) and optical wave velocity mismatch and the inability to provide a broad bandwidth at a low modulation or switching voltage.
  • RF Radio-Frequency
  • a thin single crystal silicon layer on a silicon dioxide layer overlying a silicon wafer In the field of semiconductor manufacturing, methods are known for the formation of a thin single crystal silicon layer on a silicon dioxide layer overlying a silicon wafer. These methods involve implanting ions into a silicon substrate to define a thin single crystal silicon layer thereon. The thin single crystal silicon layer is then bonded to a silicon dioxide layer overlying a silicon wafer. A thin single crystal silicon layer, silicon dioxide layer and silicon wafer structure is subsequently separated from the silicon substrate with a high temperature anneal. Such methods, however, are not suitable for the formation of a thin optical crystal layer due to the required high bond strength of optical crystal materials. In addition, the high temperature anneal is incompatible with forming a thin optical crystal layer on a substrate with mismatched thermal expansion characteristics.
  • a method for the formation of a thin optical crystal layer with characteristics e.g., electro-optical coefficient, surface quality, homogeneity and single crystal structure
  • the method should form the thin optical crystal layer in a configuration that enables the manufacturing of electro-optical devices with a reduced RF and optical wave velocity mismatch, a broad bandwidth and a low modulation or switching voltage.
  • the present invention provides a method for the formation of a thin optical crystal layer with characteristics that are suitable for use in, and in a configuration that enables the manufacturing of, electro-optical devices with a reduced RF and optical wave velocity mismatch, a broad bandwidth and a low modulation or switching voltage.
  • a method according to the present invention forms a thin optical crystal layer (e.g., a thin LiNbO 3 optical single crystal layer) overlying a low dielectric constant substrate (e.g., a low dielectric constant glass substrate).
  • the thin optical crystal layer has characteristics (e.g., electro-optical coefficient, surface quality, homogeneity, single crystal structure, etc.) that are equivalent to a bulk optical crystal and is, thus, suitable for use in electro-optical devices.
  • the method forms the thin optical crystal layer in a configuration (i.e., overlying a low dielectric constant substrate) that enables the manufacturing of electro-optical devices with a reduced RF and optical wave velocity mismatch, a broad bandwidth and a low modulation or switching voltage.
  • Processes in accordance with the present invention include first implanting ions (e.g., He + ions) into an optical crystal substrate (e.g., a LiNbO 3 optical single crystal wafer).
  • the implanted ions define, in the optical crystal substrate, a thin ion-implanted optical crystal layer overlying a bulk optical crystal substrate.
  • a low dielectric constant substrate is subsequently bonded to the optical crystal substrate, using either a direct or an indirect bonding technique, to form a bonded structure.
  • the bonded structure is thermally annealed at a temperature in the range of 300° C. to 600° C. for 30 minutes to 300 minutes.
  • the thin ion-implanted optical crystal layer and the low dielectric constant substrate are subsequently separated from the bulk optical crystal substrate by applying mechanical force to the low dielectric constant substrate and/or bulk optical crystal substrate in the direction of separation. This separation results in the formation of a thin optical crystal layer overlying a low dielectric constant substrate.
  • FIGS. 1A-1C are cross-sectional views illustrating steps in a process according to one exemplary embodiment of the present invention.
  • FIG. 2 is a graph of the second harmonic generation (SHG) intensity versus angle of incidence for a thin (1.3 micron) Z-cut LiNbO 3 optical crystal layer overlying a low dielectric constant glass substrate formed by the process of FIGS. 1A-1C; and
  • FIGS. 3A-3C is a cross-sectional view illustrating steps in a process according to another exemplary embodiment of the present invention.
  • low dielectric constant substrate refers to a substrate with a dielectric constant less than that of an overlying thin optical crystal layer formed according to the present invention.
  • FIGS. 1A-1C illustrate the sequence of steps for the formation of a thin optical crystal layer overlying a low dielectric constant substrate in a process according to one exemplary embodiment of the present invention.
  • the process includes first implanting ions into an optical crystal substrate 12 , as illustrated in FIG. 1A, where the arrows indicate the direction of ion travel during implantation.
  • the implanted ions define, in the optical crystal substrate 12 , a thin ion-implanted optical crystal layer 14 overlying a bulk optical crystal substrate 16 .
  • Optical crystal substrate 12 can be, for example, a ferroelectric optical crystal substrate, such as a lithium niobate (LiNbO 3 ) optical single crystal wafer.
  • Other optical crystal substrates known to one skilled in the art can also be employed, including but not limited to barium borate (BBO), lithium tantalate (LiTaO 3 ), barium titanate (BaTiO 3 ), potassium niobate (KNbO 3 ), potassium dihydrogen phosphate (KDP), strontium barium niobate, lead barium niobate, and potassium sodium strontium barium niobate optical crystal substrates.
  • BBO barium borate
  • LiTaO 3 lithium tantalate
  • BaTiO 3 barium titanate
  • KNbO 3 potassium dihydrogen phosphate
  • strontium barium niobate lead barium niobate
  • Optical crystal substrate 12 can also be a LiNbO 3 optical crystal substrate that has been doped with erbium (Er), neodymium (Nd) or other laser species known in the art, as well as magnesium oxide (MgO), iron (Fe), zinc (Zn) and titanium (Ti).
  • Er erbium
  • Nd neodymium
  • MgO magnesium oxide
  • Fe iron
  • Zn zinc
  • Ti titanium
  • any ion known to one skilled in the art that does not significantly alter the electrical characteristics of optical crystal substrate 12 can be implanted.
  • the size and electro-chemical characteristics of the ions determine the degree of lattice distortion that will occur in optical crystal substrate 12 and are, therefore, factors in selecting the ion to be implanted.
  • the implanted ions be noble gas ions, in order to minimize any chemical reaction between the implanted ions and optical crystal substrate 12 .
  • noble gas ions helium ions (He + ) are preferred since helium is the lightest (i.e., lowest molecular weight) noble gas and will, therefore, penetrate farther into optical crystal substrate 12 than other noble gas ions for a given implantation energy.
  • the implantation energy determines the depth (i.e., projected range [Rp] depicted in FIG. 1A) that the ions penetrate into optical crystal substrate 12 .
  • the projected range serves to define the thickness of thin ion-implanted optical crystal layer 14 .
  • the implantation energy can be in the range of 200 KeV to 3600 KeV to define a thin ion-implanted optical crystal layer with a thickness from less than 1 micron to a few microns.
  • helium ions He +
  • a LiNbO 3 optical single crystal substrate LiNbO 3 ⁇
  • the ion dose will determine the degree of lattice distortion and/or micro-damage (e.g., point defects) at the projected range (Rp). Lower doses will result in less distortion or micro-damage.
  • the ion dose is, therefore, selected to optimize the degree of lattice distortion and/or micro-damage and thereby contribute to the ability to separate the thin ion-implanted optical crystal layer from the bulk optical crystal substrate during a subsequent separation step (described below).
  • a typical helium ion dose for implantation into a LiNbO 3 optical single crystal substrate is 5 ⁇ 10 16 ions/cm 2 .
  • the ions can be implanted at an angle of, for example, 5° with respect to the normal of optical crystal substrate 12 surface. Furthermore, to avoid unwanted damage to the crystal structure of thin ion-implanted optical crystal layer 14 , it is preferred that a low implantation current density of, for example, less than 1.0 ⁇ A/cm 2 be employed.
  • the temperature of optical crystal substrate 12 is maintained at less than 350° C., in order to control the formation of point defect clusters and complexes in optical crystal substrate 12 .
  • a low dielectric constant substrate 18 is bonded to optical crystal substrate 12 to form a bonded structure 20 , as illustrated in FIG. 1 B.
  • the bonding step is accomplished using a direct bonding technique.
  • low dielectric constant substrate 18 is directly bonded to optical crystal substrate 12 using a thermal diffusion process.
  • the bonding can also be accomplished using an indirect bonding technique, as discussed below with respect to FIGS. 3A-3C.
  • a suitable direct bonding technique can include, for example, heating optical crystal substrate 12 and low dielectric constant substrate 18 at 300° C. for 2 hours under a pressure of 100N. Improved bonding can be achieved if both surfaces to be bonded together are cleaned and optically polished to a surface roughness of less than 10 angstroms.
  • Low dielectric constant substrate 18 can be any suitable low dielectric constant optical materials known in the art including, for example, a low dielectric constant glass substrate or a low dielectric constant fused quartz substrate. It is expected that the thin optical crystal layer overlying a low dielectric constant substrate that is formed by this exemplary process will be used in the manufacturing of electro-optical devices that include a waveguide region. It is, therefore, preferred that low dielectric constant substrate 18 have a refractive index that is lower than the refractive index of ion-implanted thin optical crystal layer 14 , a low absorption loss and thermal characteristics that are matched to the optical crystal substrate 12 .
  • a low dielectric constant B270 optical glass substrate can be employed since B270 optical glass has a refractive index of 1.5341 (compared to a refractive index in the range of 2.2-2.3 for LiNbO 3 ) and a thermal expansion coefficient (d 1 /dT) of 9.6 ⁇ 10 ⁇ 6 K ⁇ 1 , which is close to the thermal expansion coefficient of LiNbO 3 (i.e., a [d 1 /dT] of 15 ⁇ 10 ⁇ 6 K ⁇ 1 along the x- and y-axes and a [d 1 /dT] of 4 ⁇ 10 ⁇ 6 K ⁇ along the z-axis).
  • a low dielectric constant substrate that also has a low refractive index provides the benefit of an improved optical confinement capability.
  • bonded structure 20 is thermally annealed at a temperature in the range of 300° C. to 600° C. for 30 minutes to 300 minutes.
  • the thermal annealing serves to expand the implanted gas ions and, thus, weaken and/or break the bonds between thin ion-implanted optical crystal layer 14 and bulk optical crystal substrate 16 .
  • the thermal annealing at the temperature range of 300° C. to 600° C. and for the time period of 30 minutes to 300 minutes avoids stress induced damage due to thermal expansion mismatches between optical crystal substrate 12 and low dielectric constant substrate 18 , while still providing the required weakening and/or breaking of the bonds.
  • the weakening and/or breaking of the bonds in this thermal annealing step can be accelerated by pre-annealing thin ion-implanted optical crystal layer 14 and bulk crystal substrate 16 step at, for example, 600° C. for 30 minutes prior to the bonding step.
  • thin ion-implanted optical crystal layer 14 and low dielectric constant substrate 18 are separated from bulk optical crystal substrate 16 by applying mechanical force to low dielectric constant substrate 18 and/or bulk optical crystal substrate 16 in the direction of separation.
  • a result of the separation is a thin optical crystal layer 22 (for which thin ion-implanted optical crystal layer 14 served as a precursor) overlying low dielectric constant substrate 18 , as shown in FIG. 1C, where the arrows indicate the direction of separation and application of mechanical force.
  • the application of mechanical force is required to induce the separation since optical crystal materials have a relatively high bond strength in comparison to, for example, semiconductor crystals (e.g., silicon).
  • the mechanical force is typically applied in a direction of separation that is perpendicular to the surface of optical crystal substrate 14 .
  • the mechanical force can be applied, for example, by clamping low dielectric constant substrate 18 and bulk optical crystal substrate 16 and pulling them apart (see clamps 24 in FIG. 1 C).
  • a typical mechanical force used to induce the separation is around 0.5 N/cm .
  • an exposed surface 26 of thin optical crystal layer 22 can be polished using, for example, conventional optical crystal chemical mechanical polishing techniques. If desired, thin optical crystal layer 22 can be patterned to form a patterned thin optical crystal layer using photolithography and etching techniques.
  • FIG. 2 is a graph of theoretical and experimentally measured Second Harmonic Generation (SHG) intensity values versus angle of incidence for a fundamental 1.06 ⁇ m wavelength laser applied to a thin optical crystal layer overlying a low dielectric substrate formed by the exemplary embodiment process of FIGS. 1A-1C.
  • the subject thin optical crystal layer was a Z-cut LiNbO 3 (i.e., LiNbO 3 cut along the direction of the Z-crystal axis) thin optical crystal layer with a thickness of 1.3 microns and the subject low dielectric constant substrate was a low dielectric constant glass substrate with a thickness of 1 mm.
  • FIG. 2 are based on the assumption that the electro-optical coefficient values of the Z-cut LiNbO 3 thin optical crystal layer are identical to that of a bulk Z-cut LiNbO 3 optical crystal substrate.
  • the theoretical and experimentally measured values of FIG. 2 are in good agreement, indicating that thin optical crystal layers formed by processes in accordance with exemplary embodiments of the present invention retain the characteristics needed for use in the manufacturing of electro-optical devices.
  • Drawbacks of conventional electro-optical devices with a waveguide region and that are manufactured using bulk optical crystal substrates include RF and optical wave velocity mismatch and the inability to provide a broad bandwidth at a low modulation or switching voltage.
  • the key to eliminating these drawbacks is the provision of a low dielectric constant region in the vicinity of the waveguide region. Since methods in accordance with the present invention form a thin optical crystal layer overlying a low dielectric constant layer, the methods enable the manufacturing of electro-optical devices with a reduced RF and optical wave velocity mismatch, a broad bandwidth and a low modulation or switching voltage.
  • the presence of a low dielectric constant substrate leads to an improved RF and optical wave velocity match without the use of a conventional SiO 2 buffer layer.
  • the use of a low dielectric constant substrate that also has a low dielectric loss will provide for a desirable small RF propagation loss.
  • FIGS. 3A-3C illustrate steps in a process according to another exemplary embodiment of the present invention.
  • an indirect bonding technique can be used to bond a low dielectric constant substrate to an optical crystal substrate.
  • Such indirect bonding techniques use an intermediate bonding layer such as a BCB adhesive (i.e., Cyclotene 3022-35 adhesive) layer, spin-on-glass layer or optical-grade epoxy to achieve bonding.
  • the process includes first implanting ions into an optical crystal substrate 102 (see FIG. 3 A). The implantation of the ions defines, in the optical crystal substrate 102 , a thin ion-implanted optical crystal layer 104 overlying a bulk optical crystal substrate 106 .
  • a low dielectric constant substrate 108 is then bonded to optical crystal substrate 102 using an indirect bonding technique.
  • the indirect bonding technique utilizes intermediate layer 110 to form a bonded structure 112 .
  • a variety of materials can be used to form intermediate layer 110 , including BCB adhesive, a spin-on-glass or an optical-grade epoxy.
  • the refractive index and dielectric constant of the material used to form intermediate layer 110 should be lower than the refractive index of the optical crystal substrate 102 .
  • the indirect bonding technique can be accomplished, for example, by first priming (i.e., spin coated) the surface of optical crystal substrate 102 with an adhesive promoter (e.g., by employing an adhesive promoter application step with a spin speed of 500 rpm followed by a drying step with a spin speed of 2500 rpm for 20 seconds), followed by immediate spin coating of a BCB adhesive layer thereon.
  • the spin coating can be accomplished, for example, using a BCB dispense step with a spin speed of 100 rpm, followed by a BCB coating step with a spin speed of 500 rpm for 8 seconds and then 2000 rpm for 30 seconds to create a BCB adhesive layer with a thickness of 1.7 microns.
  • the low dielectric constant substrate 108 is also coated with a BCB adhesive layer using the same technique. Both low dielectric constant substrate 108 and optical crystal substrate 102 are subsequently soft cured at 200° C. for 1 hour in a nitrogen ambient with less than 100 ppm oxygen (O 2 ). Low dielectric constant substrate 108 and optical crystal substrate 102 are then indirectly bonded, as shown in FIG. 3B, such that the BCB adhesive layers coated thereon combine to form a single BCB adhesive intermediate layer 110 . This combination can be accomplished, for example, at a temperature of 250° C. for 1 hour in an O 2 free over pressure ambient.
  • bonded structure 112 is thermally annealed at a temperature in the range of 300° C. to 400° C. for 30 minutes to 300 minutes.
  • the thermal anneal at temperature range of 300° C. to 400° C. and time period of 30 minutes to 300 minutes avoids stress induced damage due to thermal expansion mismatches between the optical crystal substrate and the low dielectric constant substrate, as well as degradation of intermediate layer 110 .
  • thin ion-implanted optical crystal layer 104 , low dielectric constant substrate 108 and intermediate layer 110 are separated from bulk optical crystal substrate 106 by applying mechanical force to low dielectric constant substrate 108 and/or bulk optical crystal substrate 106 in the direction of separation, as illustrated in FIG. 3C.
  • a result of the separation is a thin optical crystal layer 114 (for which ion implanted optical crystal layer 104 served as a precursor) overlying low dielectric constant substrate 108 .

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  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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US09/884,616 US6436614B1 (en) 2000-10-20 2001-06-19 Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
PCT/US2001/042711 WO2002035579A2 (fr) 2000-10-20 2001-10-12 Procede de formation d'une fine couche de cristal optique sur un substrat a faible constante dielectrique
AU2002211916A AU2002211916A1 (en) 2000-10-20 2001-10-12 Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
TW090125919A TW498462B (en) 2000-10-20 2001-10-19 Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate

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US20030042608A1 (en) * 2001-09-05 2003-03-06 Jong-Chol Seol Bonding pad for optical semiconductor device and fabrication method thereof
US20040050483A1 (en) * 2002-07-17 2004-03-18 Bruno Ghyselen Method of fabricating substrates, in partictular for optics, electronics or optoelectronics
US20060060894A1 (en) * 2004-09-17 2006-03-23 Il-Doo Kim Integrated BST microwave tunable devices using buffer layer transfer method
US20130075725A1 (en) * 2011-09-27 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced wafer test line structure
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate

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Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846931A (en) 1988-03-29 1989-07-11 Bell Communications Research, Inc. Method for lifting-off epitaxial films
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US5073230A (en) 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5122852A (en) 1990-04-23 1992-06-16 Bell Communications Research, Inc. Grafted-crystal-film integrated optics and optoelectronic devices
US5201996A (en) 1990-04-30 1993-04-13 Bell Communications Research, Inc. Patterning method for epitaxial lift-off processing
US5286335A (en) 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5344517A (en) 1993-04-22 1994-09-06 Bandgap Technology Corporation Method for lift-off of epitaxial layers and applications thereof
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
US5764820A (en) 1993-03-19 1998-06-09 Akzo Nobel Nv Method of forming integrated electro-optical device containing polymeric waveguide and semiconductor
US5985742A (en) 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
WO2000048278A1 (fr) * 1999-02-10 2000-08-17 Commissariat A L'energie Atomique Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques
US6120597A (en) 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6159323A (en) 1997-12-02 2000-12-12 Commissariat A L'energie Atomique Process for selective transfer of a microstructure formed on an initial substrate to a final substrate
US6204151B1 (en) * 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment
US6303468B1 (en) * 1997-08-12 2001-10-16 Commissariat A L'energie Atomique Method for making a thin film of solid material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6516127B1 (en) * 1997-06-04 2003-02-04 Laboratorium Fur Nichtlineare Optik Microstrip line
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846931A (en) 1988-03-29 1989-07-11 Bell Communications Research, Inc. Method for lifting-off epitaxial films
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US5073230A (en) 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5122852A (en) 1990-04-23 1992-06-16 Bell Communications Research, Inc. Grafted-crystal-film integrated optics and optoelectronic devices
US5201996A (en) 1990-04-30 1993-04-13 Bell Communications Research, Inc. Patterning method for epitaxial lift-off processing
US5286335A (en) 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5764820A (en) 1993-03-19 1998-06-09 Akzo Nobel Nv Method of forming integrated electro-optical device containing polymeric waveguide and semiconductor
US5344517A (en) 1993-04-22 1994-09-06 Bandgap Technology Corporation Method for lift-off of epitaxial layers and applications thereof
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
US5985742A (en) 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6010579A (en) 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6303468B1 (en) * 1997-08-12 2001-10-16 Commissariat A L'energie Atomique Method for making a thin film of solid material
US6159323A (en) 1997-12-02 2000-12-12 Commissariat A L'energie Atomique Process for selective transfer of a microstructure formed on an initial substrate to a final substrate
US6120597A (en) 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
WO2000048278A1 (fr) * 1999-02-10 2000-08-17 Commissariat A L'energie Atomique Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques
US6204151B1 (en) * 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030042608A1 (en) * 2001-09-05 2003-03-06 Jong-Chol Seol Bonding pad for optical semiconductor device and fabrication method thereof
US6780768B2 (en) * 2001-09-05 2004-08-24 Samsung Electronics Co., Ltd. Bonding pad for optical semiconductor device and fabrication method thereof
US20040050483A1 (en) * 2002-07-17 2004-03-18 Bruno Ghyselen Method of fabricating substrates, in partictular for optics, electronics or optoelectronics
US6858107B2 (en) * 2002-07-17 2005-02-22 S.O.I. Tec Silicon On Insulator Technologies S.A. Method of fabricating substrates, in particular for optics, electronics or optoelectronics
US20060060894A1 (en) * 2004-09-17 2006-03-23 Il-Doo Kim Integrated BST microwave tunable devices using buffer layer transfer method
US7579621B2 (en) * 2004-09-17 2009-08-25 Massachusetts Institute Of Technology Integrated BST microwave tunable devices using buffer layer transfer method
US20130075725A1 (en) * 2011-09-27 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced wafer test line structure
US8476629B2 (en) * 2011-09-27 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced wafer test line structure
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate

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WO2002035579A3 (fr) 2003-09-18

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