US6214648B1 - Semiconductor chip package and method for fabricating the same - Google Patents
Semiconductor chip package and method for fabricating the same Download PDFInfo
- Publication number
- US6214648B1 US6214648B1 US09/604,762 US60476200A US6214648B1 US 6214648 B1 US6214648 B1 US 6214648B1 US 60476200 A US60476200 A US 60476200A US 6214648 B1 US6214648 B1 US 6214648B1
- Authority
- US
- United States
- Prior art keywords
- semiconductor chip
- package
- fabricating
- chip package
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/1627—Disposition stacked type assemblies, e.g. stacked multi-cavities
Definitions
- the present invention relates to a semiconductor chip package and, more particularly, to a semiconductor chip package in which longitudinal and transverse direction package stacking is made easy for reducing mounting area and increasing integrated capacity per unit mounting area; and a method for fabricating the same.
- the hole insertion mounting type semiconductor chip package there are, in general, the hole insertion mounting type semiconductor chip package and the surface mounting type semiconductor chip package.
- the hole insertion mounting type semiconductor chip package outer leads of the package are inserted into holes formed in an interconnection substrate and then soldered.
- Typical hole insertion mounting type semiconductor chip packages include DIP (Dual Inline Package), SIP (Single Inline Package), PGA (Pin Grid Array), and etc.
- the surface mounting type semiconductor chip package the package is mounted on a surface of the interconnection substrate.
- Typical surface mounting type semiconductor chip packages include SOP (Small Outline Package), SOJ (Small Outline J-bend), QFP (Quad Flat Package), and etc.
- the DIP, SOP and SOJ chip packages disadvantageously require a large mounting area (i.e., total connection area between the chip package and the interconnection substrate) because the outer leads thereof project from both sides of the package body and no stacking is possible. That is, a semiconductor chip package of the DIP, SOP and SOJ types has a limited overall device packing density, and the packing density cannot be increased unless a wider mounting board is used because all the leads projecting from both sides of the package body must come in contact with connection pads on the interconnection substrate. Moreover, because creating these conventional semiconductor chip packages requires many steps in the packaging process, such as trimming of dam bars supporting bars of the lead frame and bending the outer leads to a required form, many problems, such as a drop in productivity, exist.
- the present invention is directed to a semiconductor chip package and a method for fabricating the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- Another object of the present invention is to provide a semiconductor chip package and method of fabricating the same which increases the packing density per unit of mounting area.
- a semiconductor chip package comprising: a package body including a recess and a plurality of barrier parts formed along one side thereof, each of the barrier parts having a first region and a second region projecting from the first region, adjacent first regions being separated by a slot; a semiconductor chip, including a reference surface having a circuit and a plurality of bonding pads formed thereon, disposed in the recess of the package body; a conductive member disposed in each slot; a connecting member, associated with each bonding pad, electrically connecting the associated bonding pad with a corresponding conductive member; and a sealing member sealing the semiconductor chip, the connecting members, and at least a portion of the conductive members in contact with the connecting members.
- a semiconductor chip package comprising: at least first and second packages, each of said first and second packages including, a package body including a recess and a plurality of barrier parts formed along one side thereof, each of the barrier parts having a first region and a second region projecting from the first region, adjacent first regions being separated by a slot; a semiconductor chip, including a reference surface having a circuit and a plurality of bonding pads formed thereon, disposed in the recess of the package body; a conductive member disposed in each slot adjacent to one of the second regions, each conductive member and adjacent second region forming a projecting member, and adjacent projecting members being separated by a gap; a connecting member, associated with each bonding pad, electrically connecting the associated bonding pad with a corresponding conductive member; a sealing member sealing the semiconductor chip, the connecting members, and at least a portion of the conductive members in contact with the connecting members; and the projecting members of the first package interdigitating with the projecting members of the second
- FIG. 3 illustrates a perspective view of a body frame for fabricating the package body shown in FIG. 2;
- FIG. 5 illustrates a perspective view of a unit package body obtained by slicing the body frame shown in FIG. 4;
- FIG. 6 illustrate a perspective view of the unit package body shown in FIG. 5 with a recess for the semiconductor chip formed therein;
- FIG. 8 illustrates a perspective view of the unit package body shown in FIG. 6 with the semiconductor chip placed in the recess;
- FIG. 9 illustrates a longitudinal section across the line IX—IX shown in FIG. 8;
- FIG. 10 illustrates a perspective view of the unit package body shown in FIG. 8 having the semiconductor chip placed in the recess and the conductive members connected to the semiconductor chip via connecting members;
- FIG. 11 illustrates a longitudinal section across the line XI—XI shown in FIG. 10;
- FIG. 12 illustrates a perspective view showing an outer appearance of the unit package body shown in FIG. 10 after being sealed with a sealing member
- FIG. 13 illustrates a longitudinal section across the line XIII—XIII shown in FIG. 12;
- FIG. 14 illustrates a perspective view of the semiconductor chip packages of the present invention stacked in a transverse direction
- FIG. 16 illustrates a longitudinal section of the semiconductor chip packages of the present invention stacked in a longitudinal direction
- FIG. 17 illustrates a longitudinal section of the semiconductor chip packages of the present invention stacked in both longitudinal and transverse directions.
- FIG. 18A illustrates a plan view of a mounting board having the conventional semiconductor chip packages mounted on pads of the mounting board shown in imaginary lines;
- the semiconductor chip package 20 in accordance with a preferred embodiment of the present invention includes a rectangular semiconductor chip 2 having a reference surface with a circuit and bonding pads 1 formed thereon.
- the semiconductor chip package 20 also includes a package body 3 having both a recess 3 a with the semiconductor chip 2 placed therein and a plurality of barrier parts 3 c.
- the package body 3 is preferably formed of an insulating material such as an epoxy molding compound, plastic, or ceramic.
- the semiconductor chip 2 is fixed within the recess 3 a to the package body 3 by adhesive 10 .
- the adhesive 10 is preferably an epoxy or a polyimide.
- a conductive member 4 is inserted in each slot 3 b, and attached to the package body 3 .
- Each conductive member 4 also has a step structure which matches the step structure of the barrier parts 3 c as shown in FIG. 1 .
- the conductive members 4 may be formed of metal such as aluminum or copper alloy.
- Each second region 3 c - 2 and adjacent conductive member 4 form a projecting member 21 .
- Adjacent projecting members 21 are separated by a gap 3 d.
- the gap 3 d has a width greater than the thickness of a conductive member 4 , and, preferably, has a width equal to or greater than the total thickness of a projecting member 21 .
- a plurality of connecting members 5 electrically connect the bonding pads 1 on the semiconductor chip 2 to a corresponding one of the conductive members 4 , and a sealing member 6 seals the interconnected structure of the semiconductor chip 2 , the package body 3 , and the conductive members 4 .
- FIG. 14 illustrates a perspective view of the semiconductor chip packages of the present invention stacked in a transverse direction
- FIG. 15 illustrates a longitudinal section across the line XV—XV shown in FIG. 14
- FIG. 14 shows a first semiconductor chip package 20 according to the embodiment of FIG. 1 and a mirror image thereof (second semiconductor chip package 20 A) transversely stacked.
- each second region 3 c - 2 of the first semiconductor chip package 20 engages with a second region 3 c - 2 of the second semiconductor chip package 20 A, and each conductive member 4 of the first semiconductor chip package 20 contacts a conductive member 4 of the second semiconductor chip package 20 .
- the conductive members 4 of the first and second semiconductor chip packages 20 and 20 A are electrically connected to pads 8 on a mounting board 7 by solder 9 .
- the package bodies 3 of the first and second semiconductor chip packages 20 and 20 A are also mounted to the mounting board 7 via adhesive 11 .
- the conductive members 4 of the first and second semiconductor chip packages 20 and 20 A substantially overlap such that the connection area between the conductive members 4 with the pad 8 is substantially reduced (i.e., the mounting area is substantially reduced).
- the gaps 3 d for the first and second semiconductor chip packages 20 and 20 A may be large enough that the conductive members 4 do not come into contact. In this event, the conductive members 4 can be electrically connected using solder.
- the transverse stacking type semiconductor chip package in accordance with the second embodiment of the present invention reduces the mounting area through the above-discussed inter-digital connection which thereby connects the first and second semiconductor chip packages 20 and 20 A in a transverse direction.
- the engaged second regions 3 c - 2 of the first and second semiconductor chip packages 20 and 20 A serve as a barrier for preventing one set of conductive members 4 from the first and second semiconductor chip packages 20 and 20 A, in contact with each other, from coming into contact with another set of conductive members 4 , in contact with each other.
- FIG. 16 illustrates a sectional view of a third embodiment of the present invention wherein the semiconductor chip packages according to the present invention are stacked in a longitudinal direction.
- the bottom of a conductive member 4 of a first semiconductor chip package 30 A is attached to a pad 8 on a mounting board 7 by solder 9
- a package body 3 of the first package 30 A is attached to the mounting board 7 by an adhesive 11 .
- the bottom of the conductive member 4 of a second semiconductor chip package 30 B is attached to an upper surface of the conductive member 4 of the underlying first semiconductor chip package 30 A by solder 9
- the package body 3 of the second semiconductor chip package 30 B is attached to the package body 3 of the first semiconductor chip package 30 A by adhesive 11 .
- FIG. 16 illustrates three semiconductor chip packages stacked in the longitudinal direction
- the number of stacked packages can be greater or less than three.
- Third and fourth semiconductor chip packages 40 C and 40 D are also transversely connected in the manner shown in FIG. 15 .
- the third and fourth semiconductor chip packages 40 C and 40 D are stacked on top of the first and second semiconductor chip packages 40 A and 40 B, respectively, in the same manner as shown in FIG. 16 .
- the conductive members 4 of the third and fourth semiconductor chip packages 40 C and 40 D are electrically connected to the conductive members 4 of the first and second packages 40 A and 40 B by solder 9
- the package bodies 3 of the third and fourth semiconductor chip packages 40 C and 40 D are connected to the package bodies 3 of the first and second semiconductor chip packages 40 A and 40 B by adhesive 11 .
- FIG. 17 illustrates three levels of longitudinal stacking
- the number of stacked levels can be greater or less than 3.
- FIGS. 3 to 12 A method for fabricating the semiconductor chip package in accordance with the present invention will be explained with reference to FIGS. 3 to 12 .
- a body frame 12 is formed to include a plurality of barrier parts 3 c.
- Each barrier part 3 c has a first region 3 c - 1 and a second region 3 c - 2 extending from the first region 3 c - 1 .
- Slots 3 b separate adjacent first regions 3 c - 1 .
- the body frame 12 may be formed of insulating material such as an epoxy molding compound, a plastic or ceramic, and is preferably formed by casting.
- a conductive member 4 which serves as an outer lead, is disposed in each of the slots 3 b formed between adjacent first regions 3 c - 1 .
- the conductive member 4 is preferably made of metal such as aluminum or a copper alloy.
- a gap 3 d remains between projecting members 21 , each formed of a second region 3 c - 2 and an adjacent conductive member 4 .
- the gap 3 d has a width greater than the conductive member 4 , and preferably a width equal to or greater than the total width of the conductive member 4 and the second region 3 c - 2 .
- the body frame 12 is sliced in fixed widths at right angles to a direction of the slots 3 b to obtain a plurality of package bodies 3 .
- the package body 3 having the conductive members 4 which serve as the outer leads in the semiconductor chip package, can be formed easily.
- the upper surface of the package body 3 is ground to form a recess 3 a with the fore end of the conductive member 4 positioned within the recess 3 a region. Also, the fore end of the conductive member 4 and package body 3 are ground together to form the same step structure.
- the package body 3 is formed without the conductive members 4 , and the upper surface of the package body 3 is ground to form the recess 3 a and the step structure. Then, the conductive members 4 having a step structure are disposed in the slots 3 b between adjacent first regions 3 c - 1 .
- FIG. 7 illustrates a longitudinal section across the line VII—VII shown in FIG. 6, and shows the upper surfaces and the bottom surfaces of the conductive member 4 and the package body 3 .
- FIG. 8 illustrates a longitudinal section across the line IX—IX shown in FIG. 8, and, shows the adhesive 11 attaching the semiconductor chip 2 to the package body 3 .
- FIG. 10 illustrates a longitudinal section across the line IX—IX shown in FIG. 8, and, shows the adhesive 11 attaching the semiconductor chip 2 to the package body 3 .
- the bonding pads 1 on the semiconductor chip. 2 are electrically connected to the step surface 4 a of a corresponding one of the conductive members 4 using a connecting member 5 such as a wire.
- the wire is made of metal such as aluminum or copper alloy. Alternatively, different from the wires shown in FIG.
- each of the bonding pads 1 is a bump on the semiconductor chip 2 , and by inverting the semiconductor chip 2 , the bonding pads 1 may be directly connected to the step surfaces 4 a of the conductive members 4 .
- FIG. 11 illustrates a longitudinal section across the line XI—XI shown in FIG. 10 .
- FIG. 13 illustrates a longitudinal section across the line XIII—XIII shown in FIG. 12 .
- FIG. 18A illustrates a plan view of pads 8 of a 72 pin memory module for mounting the conventional semiconductor chip package
- FIG. 18B illustrates a plan view of pads 8 of a 72 pin memory module for mounting the semiconductor chip package of the present invention.
- a comparison of FIGS. 18A and 18B shows that the semiconductor chip package of the present invention can significantly improve mounting efficiency per unit area of the mounting board 7 because the semiconductor chip package of the present invention has the effect of simultaneous mounting at least two packages on a line of pads while only one conventional semiconductor chip package can be mounted on two lines of the pads 8 .
- the semiconductor chip package of the present invention facilitates stacking of the semiconductor chip packages in both the transverse and longitudinal directions, the mounting area can be reduced. Also, since the semiconductor chip package of the present invention has no leads projecting from the package a device which is lighter, thinner, shorter, and smaller can be fabricated.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (24)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/604,762 US6214648B1 (en) | 1996-12-31 | 2000-06-26 | Semiconductor chip package and method for fabricating the same |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR96-79246 | 1996-12-31 | ||
| KR1019960079246A KR100232221B1 (en) | 1996-12-31 | 1996-12-31 | Semiconductor package and method of manufacturing thereof |
| US08/966,703 US6140700A (en) | 1996-12-31 | 1997-11-10 | Semiconductor chip package and method for fabricating the same |
| US09/604,762 US6214648B1 (en) | 1996-12-31 | 2000-06-26 | Semiconductor chip package and method for fabricating the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/966,703 Division US6140700A (en) | 1996-12-31 | 1997-11-10 | Semiconductor chip package and method for fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US6214648B1 true US6214648B1 (en) | 2001-04-10 |
Family
ID=19493094
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/966,703 Expired - Lifetime US6140700A (en) | 1996-12-31 | 1997-11-10 | Semiconductor chip package and method for fabricating the same |
| US09/604,762 Expired - Lifetime US6214648B1 (en) | 1996-12-31 | 2000-06-26 | Semiconductor chip package and method for fabricating the same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/966,703 Expired - Lifetime US6140700A (en) | 1996-12-31 | 1997-11-10 | Semiconductor chip package and method for fabricating the same |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6140700A (en) |
| JP (1) | JP3084520B2 (en) |
| KR (1) | KR100232221B1 (en) |
| CN (1) | CN1170315C (en) |
| DE (1) | DE19743766B4 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6372619B1 (en) * | 2001-07-30 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for fabricating wafer level chip scale package with discrete package encapsulation |
| US20030166554A1 (en) * | 2001-01-16 | 2003-09-04 | Genset, S.A. | Treatment of CNS disorders using D-amino acid oxidase and D-aspartate oxidase antagonists |
| US20100038743A1 (en) * | 2003-06-24 | 2010-02-18 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3996668B2 (en) | 1997-05-27 | 2007-10-24 | 富士通株式会社 | Socket for semiconductor device |
| US6828223B2 (en) | 2001-12-14 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co. | Localized slots for stress relieve in copper |
| JP2006084337A (en) * | 2004-09-16 | 2006-03-30 | Citizen Miyota Co Ltd | Semiconductor pressure sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3489956A (en) * | 1966-09-30 | 1970-01-13 | Nippon Electric Co | Semiconductor device container |
| US4672151A (en) * | 1984-10-08 | 1987-06-09 | Fujitsu Limited | Package for a microwave semiconductor device |
| US5377077A (en) * | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
| US5574314A (en) * | 1994-07-28 | 1996-11-12 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device including shielded inner walls |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5731633A (en) * | 1992-09-16 | 1998-03-24 | Gary W. Hamilton | Thin multichip module |
| KR960005042B1 (en) * | 1992-11-07 | 1996-04-18 | 금성일렉트론주식회사 | Semiconductor patchage |
-
1996
- 1996-12-31 KR KR1019960079246A patent/KR100232221B1/en not_active Expired - Lifetime
-
1997
- 1997-09-11 CN CNB971184380A patent/CN1170315C/en not_active Expired - Fee Related
- 1997-10-02 DE DE19743766A patent/DE19743766B4/en not_active Expired - Fee Related
- 1997-11-10 US US08/966,703 patent/US6140700A/en not_active Expired - Lifetime
- 1997-12-26 JP JP09359361A patent/JP3084520B2/en not_active Expired - Fee Related
-
2000
- 2000-06-26 US US09/604,762 patent/US6214648B1/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3489956A (en) * | 1966-09-30 | 1970-01-13 | Nippon Electric Co | Semiconductor device container |
| US4672151A (en) * | 1984-10-08 | 1987-06-09 | Fujitsu Limited | Package for a microwave semiconductor device |
| US5377077A (en) * | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
| US5574314A (en) * | 1994-07-28 | 1996-11-12 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device including shielded inner walls |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030166554A1 (en) * | 2001-01-16 | 2003-09-04 | Genset, S.A. | Treatment of CNS disorders using D-amino acid oxidase and D-aspartate oxidase antagonists |
| US6372619B1 (en) * | 2001-07-30 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for fabricating wafer level chip scale package with discrete package encapsulation |
| US20100038743A1 (en) * | 2003-06-24 | 2010-02-18 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
| US8471263B2 (en) | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100232221B1 (en) | 1999-12-01 |
| DE19743766B4 (en) | 2009-06-18 |
| US6140700A (en) | 2000-10-31 |
| CN1187035A (en) | 1998-07-08 |
| JP3084520B2 (en) | 2000-09-04 |
| JPH10209315A (en) | 1998-08-07 |
| KR19980059900A (en) | 1998-10-07 |
| CN1170315C (en) | 2004-10-06 |
| DE19743766A1 (en) | 1998-07-02 |
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