US3162603A - Method of growing iridium substituted single crystal using bismuth oxide flux - Google Patents
Method of growing iridium substituted single crystal using bismuth oxide flux Download PDFInfo
- Publication number
- US3162603A US3162603A US256221A US25622163A US3162603A US 3162603 A US3162603 A US 3162603A US 256221 A US256221 A US 256221A US 25622163 A US25622163 A US 25622163A US 3162603 A US3162603 A US 3162603A
- Authority
- US
- United States
- Prior art keywords
- iridium
- oxide
- crystals
- bismuth oxide
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 30
- 229910052741 iridium Inorganic materials 0.000 title claims description 17
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical group [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 16
- 229910000416 bismuth oxide Inorganic materials 0.000 title claims description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 title claims description 7
- 230000004907 flux Effects 0.000 title 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002386 leaching Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 2
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- HPYIMVBXZPJVBV-UHFFFAOYSA-N barium(2+);iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Ba+2] HPYIMVBXZPJVBV-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2683—Other ferrites containing alkaline earth metals or lead
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
Definitions
- single crystals intrinsically have narrower line widths; (2) several useful properties are observed only in single crystals; single crystals are important as standards by which to evaluate the performance of polycrystalline materials of the same l leptuue Qi'ty, and Arthur Timber, Ether-on. Ni, asa composition.
- i .2? i 1 1 can be attained by a method involving mixing (a) ferric N0 z, glfl W-figiffg? 2969251. oxide, (5) barium oxide or barium carbonate, (0) an (Granted. uncles i l ill ssiiisfc risiiisn, sec.
- An object of this invention is to grow single crystals 20 crystallographic faces. individual crystals measure up to of the above general formula that are mechanically sound, /1 inch on an edge. The crystals possess both axial and ⁇ ; have well developed crystalline faces and are relatively planar magnetic anisotropy. The elfective axial anisotfree of microscopic pits and foreign inclusions.
- Anropy eld of the crystals can be varied from 17,000 other object is to grow single crystals of the above general towards 0 ocrsteds by controlling the iridium concentraformula for use in microwave and millimeter device aption. Crystals can also be grown having an effective plications as in isolators, rotators, filters. power limiters, planar anisotropy field from near 0 oersteds to at least and harmonic generators. A further object is to grow 22,000 oersteds. These large anisotropy field changes single crystals of the above general formula that can be are accompanied by a relatively small decrease in satura recovered byasimple chemical treatment. A still further tion magnetization and Curie temperature.
- X-ray difobject is to grow such single crystals at a melting tem- 3 fraction powder and single crystal patterns show that perature sufficiently low to eliminate the problem of the these crystals have the ferroxdure (BaFe O structure reduction of Fe, thus improving the electronic properand that the cell volume increases with increasing x. ties of the product.
- a further object is to grow the Some of the single crystals grown according to the single crystals at a temperature that greatly reduces the method of the invention with the Batch Starting Composiloss of volatile components.
- Another object is to grow 5 tion and resulting magnetic properties are listed in the single crystals possessing both axial and planar magnetic following table.
- the single crystals prepared by the method of the invention represent an effective anisotropy field range of from 17,000 oersteds axial in the case of ferroxdure (BaFe O to 22,000 oersteds planar in the case of BaEe lr Zn O
- the method lends itself to the growing of single crystals in which one can control the anisotropy properties.
- bismuth oxide (M 0 serves as the fluxing agent.
- the bismuth oxide acts as a solvent for the iridium.
- the melt may contain iridium oxide or iridium metal.
- a platinum crucible in carrying out the method as the amount of iridium introduced can then be critically controlled.
- An excess of up to 50 mole percent iridium is introduced into the initial melt in view of the volatility of the iridium and the competing side reactions occurring during the formation of the single crystals.
- the amount of the iridium that will go into the single crystal is alsov determined by such factors as the maximum temperature to which the melt is raised and the cooling rate ofthe melt.
- the amount of iridium that can be introduced into the melt is controlled by its solubility in bismuth oxide at a particular temperature.
- the initial mixture may contain from 45.5 to 50.0 mole percent Bi O 9.1 to 12.5 mole percent BaO, 27.3 to 37.5 mole percent F6203, 9.1 to 12.5 mole percent divalent metal from the group cobalt, nickel, magnesium, manganese, iron, zinc, or copper and 0 to 9.1 mole percent iridium.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Jack A.. liohn, New Shrewsbury, Robert G. Savage, Era,
Qpltriyi'flbd Fatenteri Dec. 22,
of the device in which it is incorporated; single crystals intrinsically have narrower line widths; (2) several useful properties are observed only in single crystals; single crystals are important as standards by which to evaluate the performance of polycrystalline materials of the same l leptuue Qi'ty, and Arthur Timber, Ether-on. Ni, asa composition.
fiigml'a the Mfiiiefi glides Amiifiw l It has been found that the aforementioned objectives the i .2? i 1 1 can be attained by a method involving mixing (a) ferric N0 z, glfl W-figiffg? 2969251. oxide, (5) barium oxide or barium carbonate, (0) an (Granted. uncles i l ill ssiiisfc risiiisn, sec. 26s Oxide the group l fl f h magnesium, manganese, iron, zinc, or copper, (d) iridium The invention described herein may be manufactured or iridium oxide and (e) bismuth oxide either dry or with and used by or for the Government for governmental a dispersing agent such as water or ethyl acetate, drying purposes without the payment of any royalty thereon. the mixture, heating the mixture in a platinum or iridium This invention relates to a method of growing single crucible between 1200 and 1300 C., slowly cooling the crystals of the general formula BaFe (lr l/le; )O; melt l to 4 C. per hour to 950 C., and removing the where Me is a divalent metal from the group cobalt, crystals from the crucible by leaching with hot dilute nickel, magnesium, manganese, iron. zinc, or copper and nitric acid (l()% by volume). Tue single crystals where x is a number from 0 to 0.6. obtained exhibit black very lustrous, well developed An object of this invention is to grow single crystals 20 crystallographic faces. individual crystals measure up to of the above general formula that are mechanically sound, /1 inch on an edge. The crystals possess both axial and}; have well developed crystalline faces and are relatively planar magnetic anisotropy. The elfective axial anisotfree of microscopic pits and foreign inclusions. Anropy eld of the crystals can be varied from 17,000 other object is to grow single crystals of the above general towards 0 ocrsteds by controlling the iridium concentraformula for use in microwave and millimeter device aption. Crystals can also be grown having an effective plications as in isolators, rotators, filters. power limiters, planar anisotropy field from near 0 oersteds to at least and harmonic generators. A further object is to grow 22,000 oersteds. These large anisotropy field changes single crystals of the above general formula that can be are accompanied by a relatively small decrease in satura recovered byasimple chemical treatment. A still further tion magnetization and Curie temperature. X-ray difobject is to grow such single crystals at a melting tem- 3 fraction powder and single crystal patterns show that perature sufficiently low to eliminate the problem of the these crystals have the ferroxdure (BaFe O structure reduction of Fe, thus improving the electronic properand that the cell volume increases with increasing x. ties of the product. A further object is to grow the Some of the single crystals grown according to the single crystals at a temperature that greatly reduces the method of the invention with the Batch Starting Composiloss of volatile components. Another object is to grow 5 tion and resulting magnetic properties are listed in the single crystals possessing both axial and planar magnetic following table.
TABLE Preparation and Properties of Single Crystals in the System BaFe lr lvle O Magnetic Properltcs Actual Chemical Coin Batch Starting Comlvlngnctization position position Units, cxnfi/g. Magnetic Curie Moment Temp. Anisotropy Field in Fcrrlmag. Line in us C. ocrsteds Width in oersteds Room Bl. Temp. Liq. Nib.
' l 1. Dal-c 1 01 2 moles BoCOi, 2 moles 72 103 20 .50 Axial Anisotropy 53 55 KMC.
Znt), ll moles F020;. 1 Ilu==l7,0t)t). mole lit- 0 in a platinum crucible. 2. Bn'te 11.05 IrunZn 0 Same as 1. plus 4 wt. pcr- 64 102 20.7 3L Axlnl Anisotropy cont II'Og in a platinum 11,500. crucible. 3. BaF0m su Ir Zu O Same as 1. pcrtormcd in a 47 73 18.9 217 llnuar Anisotropy 1.175 @15 KMC. Iridium crucible. 23,1100. 4. Bel o Irma Znn, Om." Sumo as 1. plus 8.3 wt. per- 59 so 2&7 Planar Anisotropy. 105 17 KMC.
cent lll lllllll metal. I
it can be seen from the table that the single crystals prepared by the method of the invention represent an effective anisotropy field range of from 17,000 oersteds axial in the case of ferroxdure (BaFe O to 22,000 oersteds planar in the case of BaEe lr Zn O Thus the method lends itself to the growing of single crystals in which one can control the anisotropy properties.
In the method of the invention, bismuth oxide (M 0 serves as the fluxing agent. The bismuth oxide acts as a solvent for the iridium. As oxidation of iridium metal at the temperatures and times employed is appreciable, the melt may contain iridium oxide or iridium metal.
It is preferred to use a platinum crucible in carrying out the method as the amount of iridium introduced can then be critically controlled. An excess of up to 50 mole percent iridium is introduced into the initial melt in view of the volatility of the iridium and the competing side reactions occurring during the formation of the single crystals. The amount of the iridium that will go into the single crystal is alsov determined by such factors as the maximum temperature to which the melt is raised and the cooling rate ofthe melt. The amount of iridium that can be introduced into the melt is controlled by its solubility in bismuth oxide at a particular temperature.
In the method, the initial mixture may contain from 45.5 to 50.0 mole percent Bi O 9.1 to 12.5 mole percent BaO, 27.3 to 37.5 mole percent F6203, 9.1 to 12.5 mole percent divalent metal from the group cobalt, nickel, magnesium, manganese, iron, zinc, or copper and 0 to 9.1 mole percent iridium.
The foregoing description is to be considered only as illustrative of the invention and not in limitation thereof.
What is claimed is:
1. The method of growing singlecrystals of the general formula BaEe (Ir Me )O Where Me is a divalent metal selected from the group consisting of cobalt, nickel, magnesium, manganese, iron, zinc, and copper and where x is a number from 0.16 to 0.6 said method comprising (1) mixing (a) ferric oxide, ([7) barium oxide, (0) an 1 oxide of a divalent metal taken from the group consisting of cobalt, nickel, magnesium, manganese, iron, zinc, and copper, (d) iridium and (e) bismuth oxide, (2) heating the mixture in a metallic crucible selected from the group consisting of platinum and iridium between 1200 and 1300 C., (3) slowly cooling the melt 1 to 4 C. per hour to 950 C., and (4) removingthe crystals from the crucible by leaching with 1020 percent by volume nitric acid.
2. The method according to claim 1 where single crystals of the formula BaFe 1r Zn O are grown.
3. The method according to claim 1 where singlecrystals of the formula BaFe lr Zn O are grown. 4. The method according to claim 1 where single crystals of the formula BaFe i'r Zn o are grown.
References Cited by the Examiner UNITED STATES PATENTS 8/58 Remeika 23305 2/63 Remeika 23-305 OTHER REFERENCES MAURICE A. BRINDISI, Primary Examiner.
"nadir
Claims (1)
1. THE METHOD OF GROWING SINGLE CRYSTALS OF THE GENERAL FORMULA BAFE12-2X(IRXMEX)O19 WHERE ME IS A DIVALENT METAL SELECTED FROM THE GROUP CONSISTING OF COBALT, NICKEL, MAGNESIUM, MANGANESE, IRON, ZINC, AND COPPER AND WHERE X IS A NUMBER FROM 0.16 TO 0.6 SAID METHOD COMPRISING (1) MIXING (A) FERRIC OXIDE, (B) BARIUM OXIDE, (C) AN OXIDE OF A DIVALENT METAL TAKEN FROM THE GROUP CONSISTING OF COBALT, NICKEL, MAGNESIUM, MANGANESE, IRON, ZINC, AND COPPER, (D) IRIDUM AND (E) BISMUTH OXIDE, (2) HEATING THE MIXTURE IN A METALLIC CRUIBLE SELECTED FROM THE GROUP CONSISTING OF PLATINUM AND IRIDIUM BETWEEN 1200 AND 1300*C., (3) SLOWLY COOLING THE MELT 1 TO 4*C. PER HOUR TO 950*C., AND (4) REMOVING THE CRYSTALS FROM THE CRUCIBLE BY LEACHING WITH 10-20 PERCENT BY VOLUME NITRIC ACID.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US256221A US3162603A (en) | 1963-02-01 | 1963-02-01 | Method of growing iridium substituted single crystal using bismuth oxide flux |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US256221A US3162603A (en) | 1963-02-01 | 1963-02-01 | Method of growing iridium substituted single crystal using bismuth oxide flux |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3162603A true US3162603A (en) | 1964-12-22 |
Family
ID=22971466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US256221A Expired - Lifetime US3162603A (en) | 1963-02-01 | 1963-02-01 | Method of growing iridium substituted single crystal using bismuth oxide flux |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3162603A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3438900A (en) * | 1965-03-25 | 1969-04-15 | Philips Corp | Ferrimagnetic material suitable for use at frequencies of at least 50 mc./sec. with improved properties |
| DE3405602A1 (en) * | 1983-02-16 | 1984-08-16 | Fuji Photo Film Co., Ltd., Minami Ashigara, Kanagawa | MAGNETIC FERRITE MATERIAL FOR MAGNETIC RECORDING AND METHOD FOR THE PRODUCTION THEREOF |
| US4700169A (en) * | 1984-03-29 | 1987-10-13 | Kabushiki Kaisha Toshiba | Zinc oxide varistor and method of making it |
| WO2016064459A3 (en) * | 2014-07-31 | 2016-07-21 | Northeastern University | Co2 z-type ferrite composite material for use in ultra-high frequency antennas |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2848310A (en) * | 1954-12-14 | 1958-08-19 | Bell Telephone Labor Inc | Method of making single crystal ferrites |
| US3079240A (en) * | 1960-05-13 | 1963-02-26 | Bell Telephone Labor Inc | Process of growing single crystals |
-
1963
- 1963-02-01 US US256221A patent/US3162603A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2848310A (en) * | 1954-12-14 | 1958-08-19 | Bell Telephone Labor Inc | Method of making single crystal ferrites |
| US3079240A (en) * | 1960-05-13 | 1963-02-26 | Bell Telephone Labor Inc | Process of growing single crystals |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3438900A (en) * | 1965-03-25 | 1969-04-15 | Philips Corp | Ferrimagnetic material suitable for use at frequencies of at least 50 mc./sec. with improved properties |
| DE3405602A1 (en) * | 1983-02-16 | 1984-08-16 | Fuji Photo Film Co., Ltd., Minami Ashigara, Kanagawa | MAGNETIC FERRITE MATERIAL FOR MAGNETIC RECORDING AND METHOD FOR THE PRODUCTION THEREOF |
| US4543198A (en) * | 1983-02-16 | 1985-09-24 | Fuji Photo Film Co., Ltd. | Ferrite magnetic material for magnetic recording and process for the preparation thereof |
| US4700169A (en) * | 1984-03-29 | 1987-10-13 | Kabushiki Kaisha Toshiba | Zinc oxide varistor and method of making it |
| WO2016064459A3 (en) * | 2014-07-31 | 2016-07-21 | Northeastern University | Co2 z-type ferrite composite material for use in ultra-high frequency antennas |
| US10468169B2 (en) | 2014-07-31 | 2019-11-05 | Rogers Corporation | Co2 Z-type ferrite composite material for use in ultra-high frequency antennas |
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