[go: up one dir, main page]

US3036251A - Spring contact element for semiconductor diodes - Google Patents

Spring contact element for semiconductor diodes Download PDF

Info

Publication number
US3036251A
US3036251A US102813A US10281361A US3036251A US 3036251 A US3036251 A US 3036251A US 102813 A US102813 A US 102813A US 10281361 A US10281361 A US 10281361A US 3036251 A US3036251 A US 3036251A
Authority
US
United States
Prior art keywords
contact element
spring contact
amount
envelope
alloys
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US102813A
Inventor
Brenner Bert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sigmund Cohn Corp
Original Assignee
Sigmund Cohn Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigmund Cohn Corp filed Critical Sigmund Cohn Corp
Priority to US102813A priority Critical patent/US3036251A/en
Priority to GB17435/62A priority patent/GB957639A/en
Priority to FR897963A priority patent/FR1322073A/en
Application granted granted Critical
Publication of US3036251A publication Critical patent/US3036251A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material
    • H01H1/023—Composite material having a noble metal as the basic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01043—Technetium [Tc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Definitions

  • This invention relates to the art of electric or mechanical contacts and, more particularly, to an improved spring contact element that is adapted to -be advantageously employed with semiconductor diodes.
  • a typical silicon diode includes a glass envelope, a par of electric leads or electrodes, namely 'a first electrode and a second electrode, which extend into the interior of the envelope, and a suitable silicon w-afer or chip within the envelope, a first face of the silicon wafer being secured to the first electrode, usually by soldering.
  • the diode also includes an electrically-conductive spring contact element which is positioned within the envelope intermediate the electro'des. One end of the spring contact element is affixed, preferably by welding, to the second electrode and the other end -bears against and exerts pressure on a second face of the ⁇ silicon wafe-r so as 'to form intimate contact with the silicon water.
  • the requirements for the spring contact element employed in a semiconductor diode include that it be resistant to corrosion and possess requisite stifiness and resiliency. Also, it is important that the temper of the spring contact element shall not be materially decreased and that the material of that element shall not oxidize appreciably in the course of fabricating the diode, including the step of subjeeting its glass envelope to relatively high temperatures to effect fusion of the glass and scaling of the same to the electrodes.
  • spring contact elements of the character mentioned above are usually made of a suitable platnum alloy.
  • suitable platnum alloys include an iridium-platinum alloy containing about 10% iridium 'and 90% platnum and a -tungsten-platinum alloy containing about 8% tungsten and 92% platnum. While spring contact elements made of these alloys are generally satisfacto they are quite expensive.
  • spring contact elements made of alloys consisting of certain proportions of alladium and one or more of the metals of group 6B of the periodic table of the elements, i.e. tungsten, molybdenum and chromium, are well suited for use in lieu of -conventional spring contact elements made of -alloys of iridium-platinum 'and tungsten-platnum in semiconductor diodes 'and other environments in which the l-atter compositions are now being used.
  • Such tungsten-palladium, molybdenumpalladium and chromium-pall adium alloys, and mixtures thereof possess requisite physical and electrical properties and characteristics which -are essential for use as contact elements of the type indieated.
  • spring contact elements made of these alloys cost only about one third as much as corresponding contact elements made of the referred-to platnum base alloys. This is a very important factor as it materially reduces the total cost of a'semiconductor diode as compared to that of a like diode employing ⁇ a platnum base alloy as the material of its spring contact element.
  • Alloys of alladium With tungsten, molybdenum and/ or chromium and certain properties -and uses of such alloys are known in general. This is exemplified by 3,036,25l Patented May 22, 1962 lCC 2 K. Ruthardt et al. Patent No. 2,890,l14, dated June 9, 1959, which discloses the use of such alloys as resistance elements of potentiometers. On the other hand, it has not heretofore been known that these alloys are suitable for use as spring contact elements and, as a consequence, result in substantial cost economies when so used.
  • spring contact elements are entirely satisfactory for the indicated purposes when composed of an alloy of a ⁇ metal selected from the group consisting, on a weight basis, of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, the balance ⁇ being palladium, and mixtures of these alloys.
  • Such spring contact elements when used in semiconductor diodes possess desired electric characten'stics and physical properties including requisite stiffness and resiliency, despite being heated to a relatively high temperature in the course of being sealed within the glass envelope.
  • spring contact elements of this invention are preferably composed of an alloy of a met-al selected from the group consisting, on a weight basis, of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromium in the amount of 4% to 7%, the balance being palladium, and mixtures of these alloys.
  • the spring contact element may be composed of an alloy of a metal selected from the group consisting, on a weight basis, of tungsten in the amount of 1% -to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, the balance being palladium *and platnum, the platnum component of this balance being in an amount up to about 50% of the total weight of the balance, and mixtures of these alloys.
  • Spring contact elements of this invention which contain both palladium and platnum are preferably composed of an alloy of a metal selected -from the group consisting, on a weight basis, of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromium in the amount of 4% to 7%, the balance being palladium and platnum, the platnum component of this balance being in an amount up to about 50% of the total weight of the balance, and mixtures of these alloys.
  • My spring contact elements made of alloys of tungstenpalladium platnum, molybdenum palladium-platinum, and chromium-palladium-platinum, and mixtures thereof, also possess requiste physical and electrical properties and characteristics.
  • Their only disadvantage as Compared to spring contact elements of corresponding alloys which are devoid of platnum, is that they are more costly, the increase in cost depending on the amount of platnum in a particular composition.
  • these spring contact elements have the advantage of being considerably less expensive than spring contact elements which are made of the earlier referred-to tungsten-platinum and iridium-platinum alloys.
  • a spring contact element having requiste electrical and physical characten'stics and properties for use in semconductor diodes and the like, which contact element is made of an alloy that is considerably less expensive than present day alloys that are employed for the same or similar purposes.
  • Another object of the invention is to provide an improved spring contact element of the character indicated that is reasonable in material and manufacturing costs and that is capable of performing its intended functions in a dependable manner over an extended time period.
  • the semiconductor diode il-- lustrated therein comprises a pair of aligned and spacedl electrodes, namely an upper electrode 1 and a lower electrode 2.
  • the electrodes are made of suitable metal compositions, such as those which are presently available under the trade names Dumet and Kovarf' Both electrodes extend into and are hermetically sealed to a glass envelope 3 in the usual manner.
  • the upper end of elec-- trode 2 includes a platform or support 4 to which a semiconductor water or chip 5 is afiixed, preferably by soldering.
  • the semiconductor water is preferably made of silicon but may consist of any other suitable semiconductoc material known to the art.
  • An electrically conductive spring contact element 6 is interposed between the lower end of electrode 1 and the upper face of silicon water 5 and is composed of a palladiurn base alloy earlier described.
  • the spring contact' element is of S-configuration and is made from a ribbon of at least one of the indicated palladium-containing alloys. The thickness and width of such ribbon depends on its intended specific use.
  • the ⁇ spring coutact element may be made from a ribbon of the selected alloy that is .003" in thickness by .Ol8" in width for certain silicon diodes.
  • the upper end portion of spring contact element 6 is. welded to the lower end of electrode 1, as indicated at 7.
  • the parts are so constructed and arranged at the time of assembly that the lower end portion of the spring contact element bears against and exerts requisite pressure against the upper face of the silicon wafer so as to obtain desired yielding intimate contact between the contact element and the water.
  • a semiconductor diode an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconducto' material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consistng of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to and chromium in the amount of 1% to 12%, said amounts being on a weight basis, the balance of the alloy being alladium, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element bean'ng against a second face of the member.
  • a semiconductor diode an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconductor material within the envelope, the first eiectrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consisting of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromiurn in the amount of 4% to 7%, said amounts being on a weight basis, the balance of the alloy being palladium, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element hearing against a second face of the member.
  • an electrically non-conductive envelope comprising a semiconductor material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an 'alloy of a metal selected from the group consisting of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, said amounts being on a weight basis, the balance of the alloy being palladium and platinum, the latinum Component of the balance being in an amount up to about 50% of the total weight of the balance, one end portion of the contact element being secure-:1 to the second electrode, the other end portion of the contact element bearing against :a second face -cf the member.
  • a member comprising a semiconductor material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consisting of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to ⁇ 12% and chromium in the amount of 4% to 7%, said amounts being on a weight basis, the balance of the alloy being palladium and platinum, the platinum Component of the balance being in an amount up to about 50% of the total weight of the balance, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element hearing against a second face of the member.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Contacts (AREA)

Description

B. BRENNER May 22, 1962 SPRING CONTACT ELEMENT FOR SEMICONDUCTOR DIODES Filed April 15, 1961 INVENTOR. B ERT BREN N ER ATTORNEY York Filed Apr. 13, 1961, Ser. No. 102,S13 8 Claims. (Cl. 317-234) This invention relates to the art of electric or mechanical contacts and, more particularly, to an improved spring contact element that is adapted to -be advantageously employed with semiconductor diodes.
There are various known types and forms of semiconductors, such as glass-sealed silicon diodes. Accordingly and for the purposes of this application, the ensuing discussion and description and the accompanying drawing are directed to a diode of this type.
A typical silicon diode includes a glass envelope, a par of electric leads or electrodes, namely 'a first electrode and a second electrode, which extend into the interior of the envelope, and a suitable silicon w-afer or chip within the envelope, a first face of the silicon wafer being secured to the first electrode, usually by soldering. The diode also includes an electrically-conductive spring contact element which is positioned within the envelope intermediate the electro'des. One end of the spring contact element is affixed, preferably by welding, to the second electrode and the other end -bears against and exerts pressure on a second face of the `silicon wafe-r so as 'to form intimate contact with the silicon water.
The requirements for the spring contact element employed in a semiconductor diode include that it be resistant to corrosion and possess requisite stifiness and resiliency. Also, it is important that the temper of the spring contact element shall not be materially decreased and that the material of that element shall not oxidize appreciably in the course of fabricating the diode, including the step of subjeeting its glass envelope to relatively high temperatures to effect fusion of the glass and scaling of the same to the electrodes.
Present day spring contact elements of the character mentioned above are usually made of a suitable platnum alloy. Among such alloys are an iridium-platinum alloy containing about 10% iridium 'and 90% platnum and a -tungsten-platinum alloy containing about 8% tungsten and 92% platnum. While spring contact elements made of these alloys are generally satisfacto they are quite expensive.
I have discovered that spring contact elements made of alloys consisting of certain proportions of alladium and one or more of the metals of group 6B of the periodic table of the elements, i.e. tungsten, molybdenum and chromium, are well suited for use in lieu of -conventional spring contact elements made of -alloys of iridium-platinum 'and tungsten-platnum in semiconductor diodes 'and other environments in which the l-atter compositions are now being used. Such tungsten-palladium, molybdenumpalladium and chromium-pall adium alloys, and mixtures thereof possess requisite physical and electrical properties and characteristics which -are essential for use as contact elements of the type indieated. :Mor-cover, spring contact elements made of these alloys cost only about one third as much as corresponding contact elements made of the referred-to platnum base alloys. This is a very important factor as it materially reduces the total cost of a'semiconductor diode as compared to that of a like diode employing `a platnum base alloy as the material of its spring contact element.
Alloys of alladium With tungsten, molybdenum and/ or chromium and certain properties -and uses of such alloys are known in general. This is exemplified by 3,036,25l Patented May 22, 1962 lCC 2 K. Ruthardt et al. Patent No. 2,890,l14, dated June 9, 1959, which discloses the use of such alloys as resistance elements of potentiometers. On the other hand, it has not heretofore been known that these alloys are suitable for use as spring contact elements and, as a consequence, result in substantial cost economies when so used.
I have -ascertained that spring contact elements are entirely satisfactory for the indicated purposes when composed of an alloy of a `metal selected from the group consisting, on a weight basis, of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, the balance `being palladium, and mixtures of these alloys. Such spring contact elements, when used in semiconductor diodes possess desired electric characten'stics and physical properties including requisite stiffness and resiliency, despite being heated to a relatively high temperature in the course of being sealed within the glass envelope.
For best results, spring contact elements of this invention are preferably composed of an alloy of a met-al selected from the group consisting, on a weight basis, of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromium in the amount of 4% to 7%, the balance being palladium, and mixtures of these alloys.
lt is within the purview of this invention to replace part of the palladium component of the above identified tungsten-palladum, molybdenum-Palladium and chromium-palladium alloys and mixtures thereof with platinum in an amount up to about 50% of the indicated palladium content. Thus the spring contact element may be composed of an alloy of a metal selected from the group consisting, on a weight basis, of tungsten in the amount of 1% -to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, the balance being palladium *and platnum, the platnum component of this balance being in an amount up to about 50% of the total weight of the balance, and mixtures of these alloys.
Spring contact elements of this invention which contain both palladium and platnum are preferably composed of an alloy of a metal selected -from the group consisting, on a weight basis, of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromium in the amount of 4% to 7%, the balance being palladium and platnum, the platnum component of this balance being in an amount up to about 50% of the total weight of the balance, and mixtures of these alloys.
My spring contact elements, made of alloys of tungstenpalladium platnum, molybdenum palladium-platinum, and chromium-palladium-platinum, and mixtures thereof, also possess requiste physical and electrical properties and characteristics. Their only disadvantage, as Compared to spring contact elements of corresponding alloys which are devoid of platnum, is that they are more costly, the increase in cost depending on the amount of platnum in a particular composition. On the other hand, these spring contact elements have the advantage of being considerably less expensive than spring contact elements which are made of the earlier referred-to tungsten-platinum and iridium-platinum alloys.
Accordingly, it is an important object of this invention to provide a spring contact element having requiste electrical and physical characten'stics and properties for use in semconductor diodes and the like, which contact element is made of an alloy that is considerably less expensive than present day alloys that are employed for the same or similar purposes. Another object of the invention is to provide an improved spring contact element of the character indicated that is reasonable in material and manufacturing costs and that is capable of performing its intended functions in a dependable manner over an extended time period.
Certain aspects of the invention will be readily understood by persons trained in the art from the following: detailed` description taken in conjunction with the accom-- panying drawing wherein a semiconductor diode, including a spring contact element of this invention, is shown, in perspective and partly in cross section.
Referring to the drawing, the semiconductor diode il-- lustrated therein comprises a pair of aligned and spacedl electrodes, namely an upper electrode 1 and a lower electrode 2. The electrodes are made of suitable metal compositions, such as those which are presently available under the trade names Dumet and Kovarf' Both electrodes extend into and are hermetically sealed to a glass envelope 3 in the usual manner. The upper end of elec-- trode 2 includes a platform or support 4 to which a semiconductor water or chip 5 is afiixed, preferably by soldering. The semiconductor water is preferably made of silicon but may consist of any other suitable semiconductoc material known to the art.
An electrically conductive spring contact element 6 is interposed between the lower end of electrode 1 and the upper face of silicon water 5 and is composed of a palladiurn base alloy earlier described. The spring contact' element is of S-configuration and is made from a ribbon of at least one of the indicated palladium-containing alloys. The thickness and width of such ribbon depends on its intended specific use. For example, the `spring coutact element may be made from a ribbon of the selected alloy that is .003" in thickness by .Ol8" in width for certain silicon diodes.
The upper end portion of spring contact element 6 is. welded to the lower end of electrode 1, as indicated at 7. The parts are so constructed and arranged at the time of assembly that the lower end portion of the spring contact element bears against and exerts requisite pressure against the upper face of the silicon wafer so as to obtain desired yielding intimate contact between the contact element and the water.
From the foregoing, it is believed that the objects, advantages and utility of my present invention will be readily comprehended by persons skilled in the art without further description. While a specific embodiment of the invention has been shown and described to illustrate the application of the invention principles, it will be understood that the invention may be embodied otherwise Without departing from such principles.
I claim:
1. In a semiconductor diode, an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconducto' material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consistng of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to and chromium in the amount of 1% to 12%, said amounts being on a weight basis, the balance of the alloy being alladium, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element bean'ng against a second face of the member.
2. A semiconductor diode constructed as dened in claim 1 wherein the material of the spring contact element is a composite of at least two palladium alloys according to claim 1.
3. In a semiconductor diode, an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconductor material within the envelope, the first eiectrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consisting of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to 12% and chromiurn in the amount of 4% to 7%, said amounts being on a weight basis, the balance of the alloy being palladium, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element hearing against a second face of the member.
4. A semiconductor diode constructed as dened in claim 3 wherein the material of the spring contact element is a composite of at least two palladium alloys according to claim 3.
5. In a semiconductor diode, an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconductor material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an 'alloy of a metal selected from the group consisting of tungsten in the amount of 1% to 10%, molybdenum in the amount of 1% to 20% and chromium in the amount of 1% to 12%, said amounts being on a weight basis, the balance of the alloy being palladium and platinum, the latinum Component of the balance being in an amount up to about 50% of the total weight of the balance, one end portion of the contact element being secure-:1 to the second electrode, the other end portion of the contact element bearing against :a second face -cf the member.
6. A semiconductor diode constructed as defined in claim S wherein the material of the spring contact element is a composite of at least two palladium platnum alloys according to claim 5.
7. in a semiconductor diode, an electrically non-conductive envelope, first and second electrodes extending into the envelope, a member comprising a semiconductor material within the envelope, the first electrode being connected to a first face of the member, and a spring contact element within the envelope and composed of an alloy of a metal selected from the group consisting of tungsten in the amount of 3% to 6%, molybdenum in the amount of 8% to` 12% and chromium in the amount of 4% to 7%, said amounts being on a weight basis, the balance of the alloy being palladium and platinum, the platinum Component of the balance being in an amount up to about 50% of the total weight of the balance, one end portion of the contact element being secured to the second electrode, the other end portion of the contact element hearing against a second face of the member.
8. A semiconductor diode constructed as defined in claim 7 whcrein the material of the spring contact element is a composite of at least two alladium platinum alloys according to claim 7.
References Citcd in the file of this patent UNITED STATES PATENTS

Claims (1)

1. IN A SEMICONDUCTOR DIODE, AN ELECTRICALLY NON-CONDUCTIVE ENVELOPE, FIRST AND SECOND ELECTRODES EXTENDING INTO THE ENVELOPE, A MEMBER COMPRISING A SEMICONDUCTOR MATERIAL WITHIN THE ENVELOPE, THE FIRST ELECTRODE BEING CONNECTED TO A FIRST FACE OF THE MEMBER, AND A SPRING CONTACT ELEMENT WITHIN THE ENVELOPE AND COMPOSED OF AN ALLOY OF A METAL SELECTED FROM THE GROUP CONSISTING OF TUNGSTEN IN THE AMOUNT OF 1% TO 10%, MOLYBDENUM IN THE AMOUNT OF 1% TO 20% AND CHROMIUM IN THE AMOUNT OF 1% TO 12%, SAID AMOUNTS BEING ON A WEIGHT BASIS, THE BALANCE OF THE ALLOY BEING PALLADIUM, ONE END PORTION OF THE CONTACT ELEMENT BEING SECURED TO THE SECOND ELECTRODE, THE OTHER END PORTION OF THE CONTACT ELEMENT BEARING AGAINST A SECOND FACE OF THE MEMBER.
US102813A 1961-04-13 1961-04-13 Spring contact element for semiconductor diodes Expired - Lifetime US3036251A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US102813A US3036251A (en) 1961-04-13 1961-04-13 Spring contact element for semiconductor diodes
GB17435/62A GB957639A (en) 1961-04-13 1962-05-07 Semiconductor devices
FR897963A FR1322073A (en) 1961-04-13 1962-05-18 Contact spring intended more particularly for semiconductor diodes, and diodes comprising such a spring

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US102813A US3036251A (en) 1961-04-13 1961-04-13 Spring contact element for semiconductor diodes
GB17435/62A GB957639A (en) 1961-04-13 1962-05-07 Semiconductor devices
FR897963A FR1322073A (en) 1961-04-13 1962-05-18 Contact spring intended more particularly for semiconductor diodes, and diodes comprising such a spring

Publications (1)

Publication Number Publication Date
US3036251A true US3036251A (en) 1962-05-22

Family

ID=27246578

Family Applications (1)

Application Number Title Priority Date Filing Date
US102813A Expired - Lifetime US3036251A (en) 1961-04-13 1961-04-13 Spring contact element for semiconductor diodes

Country Status (3)

Country Link
US (1) US3036251A (en)
FR (1) FR1322073A (en)
GB (1) GB957639A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243670A (en) * 1963-09-30 1966-03-29 Int Standard Electric Corp Mountings for semiconductor devices
US4810314A (en) * 1987-12-28 1989-03-07 The Standard Oil Company Enhanced corrosion resistant amorphous metal alloy coatings
US5139891A (en) * 1991-07-01 1992-08-18 Olin Corporation Palladium alloys having utility in electrical applications
US5236789A (en) * 1991-07-01 1993-08-17 Olin Corporation Palladium alloys having utility in electrical applications

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316944A (en) * 1980-06-18 1982-02-23 United Technologies Corporation Noble metal-chromium alloy catalysts and electrochemical cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438893A (en) * 1943-12-29 1948-04-06 Bell Telephone Labor Inc Translating device
US2824269A (en) * 1956-01-17 1958-02-18 Bell Telephone Labor Inc Silicon translating devices and silicon alloys therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438893A (en) * 1943-12-29 1948-04-06 Bell Telephone Labor Inc Translating device
US2824269A (en) * 1956-01-17 1958-02-18 Bell Telephone Labor Inc Silicon translating devices and silicon alloys therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243670A (en) * 1963-09-30 1966-03-29 Int Standard Electric Corp Mountings for semiconductor devices
US4810314A (en) * 1987-12-28 1989-03-07 The Standard Oil Company Enhanced corrosion resistant amorphous metal alloy coatings
US5139891A (en) * 1991-07-01 1992-08-18 Olin Corporation Palladium alloys having utility in electrical applications
US5236789A (en) * 1991-07-01 1993-08-17 Olin Corporation Palladium alloys having utility in electrical applications

Also Published As

Publication number Publication date
FR1322073A (en) 1963-03-22
GB957639A (en) 1964-05-06

Similar Documents

Publication Publication Date Title
US2300286A (en) Electrical contact
US4339644A (en) Low-power electric contact
MY123824A (en) Chip resistor.
US2145690A (en) Electric contact material
CA2050458A1 (en) Electrode
US3036251A (en) Spring contact element for semiconductor diodes
US4111690A (en) Electrical contacts with gold alloy
GB765273A (en) Electrical contacts
NL6608661A (en)
US2241262A (en) Electrical contact
US2298999A (en) Electrical contact
US1339505A (en) Composition of matter for platinum surstitute in electrical terminals and other uses
US3826886A (en) Contact material
US3574570A (en) Composite contact structure for connection to an aluminum support
CA2122525A1 (en) Electrical contact containing a braze diffusion barrier
US3353134A (en) Resistive element and variable resistor
KR980007893A (en) Conductive Paste Composition for Chip Resistor Terminal Electrodes
US3214558A (en) Contact arrangement exhibiting reduced material migration
US2916810A (en) Electric contacts
US1415233A (en) Composition of matter for platinum substitute in chemical apparatus and other uses and method of making same
US1779603A (en) Alloy for electrical contacts
US2138599A (en) Contact element
US2032439A (en) Electric current rectifier
US2331088A (en) Soldering iron
US2163354A (en) Electrical make and break contact