US20250003105A1 - Electroplating systems and methods - Google Patents
Electroplating systems and methods Download PDFInfo
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- US20250003105A1 US20250003105A1 US18/341,958 US202318341958A US2025003105A1 US 20250003105 A1 US20250003105 A1 US 20250003105A1 US 202318341958 A US202318341958 A US 202318341958A US 2025003105 A1 US2025003105 A1 US 2025003105A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
Definitions
- This description relates to electroplating, such as electroplating of semiconductor device assemblies.
- Electrochemical processes can be used to plate metal surfaces (e.g., exposed copper surfaces) of semiconductor device assemblies (device assemblies, assemblies, etc.), such as exposed metal surfaces of a leadframe, metallic seed layers on a substrate, direct-bonded metal layers on a substrate, etc.
- metal surfaces e.g., exposed copper surfaces
- semiconductor device assemblies devices, assemblies, etc.
- such processes can be used to perform tin plating (or plating with other metals), where such plating can prevent corrosion (e.g., oxidation) of corresponding metal surfaces, such as copper, as well as improve solderability of metal surfaces of a semiconductor device assembly.
- Prior electroplating approaches can have certain drawbacks, however, such as non-uniform plating thickness, where a plating thickness for metal surfaces on one side of an assembly is undesirably thicker than a plating thickness for metal surfaces on an opposite side of the assembly.
- Such thicker plating can result in leakage and or electrical shorts (e.g., between signal pins or pads and/or power supply pins and/or terminals, etc.) due to excess plating material creating undesired conduction pathways.
- prior approaches can increase overall operating and/or product costs due to consumption of excess plating material.
- an electroplating system in a general aspect, includes a vessel, an electrolytic plating solution in the vessel, a cathode terminal, first and second anode terminals, and first and second variable power supplies.
- the cathode terminal is configured to electrically connect with a workpiece that is submerged in the electrolytic plating solution.
- the first anode terminal is in the electrolytic plating solution on a first side of the workpiece.
- the second anode terminal is in the electrolytic plating solution on a second side of the workpiece opposite the first side.
- the first variable power supply is coupled between the cathode terminal and the first anode terminal.
- the second variable power supply is coupled between the cathode terminal and the second anode terminal.
- Implementations can include one or more of the following features, alone or in combination.
- the first variable power supply can include a first variable voltage power supply
- the second variable power supply can include a second variable voltage power supply.
- the first variable power supply can include a first variable current power supply
- the second variable power supply can include a second variable current power supply
- the first anode terminal and the second anode terminal can each include a solid plating material that is soluble in the electrolytic plating solution.
- the electrolytic plating solution can include methane sulfonic acid (MSA) and a liquid plating material.
- MSA methane sulfonic acid
- the electroplating system can include a third anode terminal in the electrolytic plating solution on the first side of the workpiece, and a fourth anode terminal in the electrolytic plating solution on the second side of the workpiece.
- the electroplating system can include a third variable power supply that is coupled between the cathode terminal and the third anode terminal, and a fourth variable power supply that is coupled between the cathode terminal and the fourth anode terminal.
- the third variable power supply can include a first variable voltage power supply
- the fourth variable power supply can include a second variable voltage power supply.
- the third variable power supply can include a first variable current power supply
- the fourth variable power supply can include a second variable current power supply.
- the workpiece can be a strip of block molded semiconductor device assemblies.
- a method in another general aspect, includes electrically coupling a workpiece with a common cathode terminal of an electroplating system and submerging the workpiece in an electrolytic plating solution.
- the method further includes supplying, from a first anode terminal submerged in the electrolytic plating solution, a first plating current for electroplating at least one plateable surface on a first side of the workpiece.
- the method further includes supplying, from a second anode terminal submerged in the electrolytic plating solution, a second plating current for electroplating at least one plateable surface on a second side of the workpiece.
- the second plating current is different than the first plating current, and the second side of the workpiece is opposite the first side of the workpiece.
- the first plating current can be based on an area of the at least one plateable surface on the first side of the workpiece.
- the second plating current can be based on an area of the at least one plateable surface on the second side of the workpiece.
- the first plating current can be used for plating a first portion of the at least one plateable surface on the first side of the workpiece
- the second plating current can be used for plating a first portion of the at least one plateable surface on the second side of the workpiece.
- the method can include supplying, from a third anode terminal submerged in the electrolytic plating solution, a third plating current for electroplating a second portion of the at least one plateable surface on the first side of the workpiece.
- the method can also include supplying, from a fourth anode terminal submerged in the electrolytic plating solution, a fourth plating current for electroplating a second portion of the at least one plateable surface on the second side of the workpiece.
- the third plating current can be different than the first plating current, and the fourth plating current can be different than the second plating current.
- the third plating current can be equal to the first plating current
- the fourth plating current can be equal to the second plating current
- the third plating current can be equal to the first plating current, and the fourth plating current can be different than the second plating current.
- an electroplating system in another general aspect, includes a vessel, an electrolytic plating solution in the vessel including a liquid plating material, a common cathode terminal, a first anode terminal, a second anode terminal, a third anode terminal, a fourth anode terminal, a first variable power supply, a second variable power supply, a third variable power supply, and a fourth variable power supply.
- the common cathode terminal is configured to electrically connect with a workpiece that is submerged in the electrolytic plating solution.
- the first and second anode terminals are in the electrolytic plating solution on a first side of the workpiece.
- the third anode terminal and fourth anode terminals are in the electrolytic plating solution on a second side of the workpiece opposite the first side.
- the first variable power supply is coupled between the common cathode terminal and the first anode terminal.
- the second variable power supply is coupled between the common cathode terminal and the second anode terminal.
- the third variable power supply is coupled between the common cathode terminal and the third anode terminal.
- the fourth variable power supply is coupled between the common cathode terminal and the fourth anode terminal.
- the first variable power supply can include a first variable voltage power supply.
- the second variable power supply can include a second variable voltage power supply.
- the third variable power supply can include a third variable voltage power supply.
- the fourth variable power supply can include a fourth variable voltage power supply.
- the first variable power supply can include a first variable current power supply.
- the second variable power supply can include a second variable current power supply.
- the third variable power supply can include a third variable current power supply.
- the fourth variable power supply can include a fourth variable current power supply.
- the workpiece can be a strip of block molded semiconductor device assemblies.
- FIG. 1 is a diagram schematically illustrating an example electroplating system.
- FIG. 2 is a diagram schematically illustrating another example electroplating system.
- FIG. 3 is a diagram illustrating an example strip of block molded semiconductor device assemblies viewed from a first (e.g., top) side.
- FIG. 4 is a diagram illustrating the strip of block molded semiconductor device assemblies of FIG. 3 viewed from a second (e.g., bottom) side.
- FIG. 5 is a diagram illustrating plated areas (e.g., on a bottom side) of a semiconductor device assembly of the strip of block molded semiconductor device assemblies of FIGS. 3 and 4 .
- FIG. 6 is a flowchart illustrating an example method for electroplating.
- plating systems and methods described herein can reduce non-uniformity in plating thicknesses on surfaces (e.g., plateable surfaces) on opposite sides of semiconductor device assemblies, such as strips of block molded semiconductor device assemblies or packages.
- Such block molded strips can have different plateable surface areas on opposite sides, e.g., a first plateable surface area on a top side of the strip, and a second, different plateable surface area on a bottom side of the strip.
- Molding compound surfaces for purposes of this disclosure, are not plateable surfaces.
- variable power supplies e.g., variable voltage and/or current
- respective plating currents for plateable surfaces on each side of a semiconductor assembly e.g., based on corresponding areas of the respective plateable surfaces
- prior plating approaches can result in undesirably thicker plating on the plateable surfaces on a side of the assembly where an area of the plateable surfaces is relatively smaller area, e.g., as compared with an area of the plateable surfaces on the opposite side.
- plating currents can be provided (e.g., on each side of an assembly) such that equal, or approximately equal, plating current densities (e.g., in amps (A) per decimeter-squared (dm 2 )) are used for respectively plating surfaces on each side, e.g., on a top side and a bottom side, of an assembly, where the respective plateable surfaces are not symmetric and/or have different surface areas.
- plating current densities e.g., in amps (A) per decimeter-squared (dm 2 )
- example approaches described herein can reduce manufacturing and/or product costs by reducing an amount of plating material used as a result of improved plating thickness uniformity. Additionally, by improving plating uniformity, leakage and/or electrical shorts can be prevented, particularly in assemblies with tight pitches (e.g., small distances between signal pins, signal pads, and/or other plated surfaces), as application of undesired excess plating material causing such leakage and/or shorts can be prevented. Accordingly, as compared with prior approaches, the disclosed implementations can facilitate pitch reduction. Such pitch reduction can, in turn, allow for reducing respective sizes of semiconductor device assemblies, which can achieve additional operational and/or product cost savings as a result, such as reduced material costs.
- pitches e.g., small distances between signal pins, signal pads, and/or other plated surfaces
- FIG. 1 is a diagram schematically illustrating an example electroplating system 100 .
- the electroplating system 100 includes a vessel 105 in which an electrolytic plating solution 110 is disposed.
- the electrolytic plating solution 110 can include methane sulfonic acid (MSA) or equivalent electrolytic solution (such as nickel sulfamate or copper sulfate) and a liquid metal solution, where the liquid metal solution includes a metal, e.g., a liquid plating metal, such as liquid tin, that is used to plateable surfaces, such as exposed metal surfaces, of a workpiece 125 that are submerged, e.g., disposed, in the electrolytic plating solution 110 .
- the electrolytic plating solution 110 can include one or more additives to facilitate efficient electroplating.
- Other surface of the workpiece 125 disposed in the electrolytic plating solution 110 may be non-plateable, such as molding compound surfaces.
- the electroplating system 100 includes a sparger 115 that is disposed within the electrolytic plating solution 110 in the vessel 105 .
- a position of the sparger 115 within the vessel 105 can be adjusted, e.g., in the view of FIG. 1 , vertically adjusted based on a size of the workpiece 125 being plated.
- the sparger 115 can generate a fluidic flow within the electrolytic plating solution 110 . This fluidic flow can agitate the electrolytic plating solution 110 (e.g., to maintain homogeneity of the electrolytic plating solution 110 and/or to facilitate plating efficiency).
- the sparger 115 can create a laminar flow of the electrolytic plating solution 110 over the workpiece 125 .
- the electroplating system 100 of FIG. 1 includes a cathode terminal 120 .
- the cathode terminal 120 includes a clip 120 a that is used to physically and electrically couple the cathode terminal 120 with the workpiece 125 , e.g., to electrically couple the cathode terminal 120 with surfaces of the workpiece 125 to be plated, such as a leadframe strip including a plurality of semiconductor device assemblies, e.g., a strip of block molded device assemblies. While a single clip (clip 120 a ) is shown in FIG. 1 , in some implementations the cathode terminal 120 can include a plurality of clips for electrically coupling to the workpiece 125 , and for positioning the workpiece 125 within the electrolytic plating solution 110 .
- the electroplating system 100 also includes an anode terminal 130 disposed on a first side of the workpiece 125 and the cathode terminal 120 , and an anode terminal 140 disposed on a second side of the workpiece 125 and the cathode terminal 120 that is opposite the first side. That is, in this view, the anode terminal 130 is disposed in the electrolytic plating solution 110 on the left side of the cathode terminal 120 and the workpiece 125 , while the anode terminal 140 is disposed in the electrolytic plating solution 110 on the right side of the cathode terminal 120 and the workpiece 125 .
- variable power supply 135 is coupled between the cathode terminal 120 and the anode terminal 130 , while a variable power supply 145 is coupled between the cathode terminal 120 and the anode terminal 140 .
- the variable power supply 135 provides a plating current from the anode terminal 130 to the cathode terminal 120 for plating plateable surfaces on the left side of the workpiece 125 , which could also be referred to as a bottom side of the workpiece 125 in some implementations.
- the variable power supply 145 provides a plating current from the anode terminal 140 to the cathode terminal 120 for plating plateable surfaces on the right side of the workpiece 125 , which could also be referred to as a top side of the workpiece 125 in some implementations. That is, in the electroplating system 100 , the cathode terminal 120 is a common cathode terminal for the anode terminal 130 , the variable power supply 135 , the anode terminal 140 and the variable power supply 145 .
- the anode terminal 130 includes a base portion 130 a and a soluble portion 130 b disposed on the base portion 130 a
- the anode terminal 140 includes a base portion 140 a and a soluble portion 140 b disposed on the base portion 140 a
- the base portion 130 a and the base portion 140 a can be formed of a material with low electrical resistance that is not prone to consumption in the electrolytic plating solution 110 , e.g., during electroplating of the workpiece 125 .
- the base portion 130 a and the base portion 140 a can each include a titanium anode basket, or an equivalent anode material.
- the soluble portion 130 b and the soluble portion 140 b can include a solid plating metal, such as tin or other plating metal, which is soluble in the electrolytic plating solution 110 . Accordingly, the soluble portion 130 b and the soluble portion 140 b , in this example, are consumed, at least in part, during electroplating of the workpiece 125 . That is, the soluble portion 130 b and the soluble portion 140 b provide consumable plating metal that, in combination with plating metal already in solution in the electrolytic plating solution 110 , is used to plate plateable surfaces of the workpiece 125 (and/or other workpieces).
- a solid plating metal such as tin or other plating metal
- the soluble portion 130 b of the anode terminal 130 and the soluble portion 140 b of the anode terminal 140 would be periodically replenished, such as in implementations of the electroplating system 100 used in semiconductor device assembly manufacturing processes.
- the base portion 130 a and the base portion 140 a may also be periodically replaced, though less frequently than the soluble portion 130 b and the soluble portion 140 b.
- variable power supply 135 and the variable power supply 145 of the electroplating system 100 can each be a respective variable voltage power supply.
- variable power supply 135 and the variable power supply 145 can each be a respective variable current power supply, e.g., can each include a variable current source.
- respective plating voltages and/or plating currents can be provided by the variable power supply 135 and the variable power supply 145 .
- variable power supply 135 and the variable power supply 145 can each be adjusted, or configured to provide respective plating currents based on respective areas of plateable surfaces on each side of the workpiece 125 , e.g., determined based on a ratio of the plateable surfaces area on each side of the workpiece 125 .
- variable power supply 135 can be adjusted to provide ninety percent of a total plating current in the electroplating system 100
- variable power supply 145 can be adjusted to provide ten percent of the total plating current.
- the plating current provided by the variable power supply 135 and the variable power supply 145 can also plate plateable surfaces that are disposed between the left and right sides of the workpiece 125 , e.g., edges of a leadframe strip of the workpiece 125 .
- FIG. 2 is a diagram schematically illustrating another example electroplating system 200 .
- the electroplating system 200 includes like elements as the electroplating system 100 , which are referenced with the same 100 series reference numbers in FIG. 2 as in FIG. 1 . Accordingly, for purposes of brevity, those like elements of the electroplating system 200 are not described again with reference to FIG. 2 .
- the electroplating system 200 also includes an anode terminal 230 and an anode terminal 250 that are disposed in the electrolytic plating solution 110 on a first (left or bottom) side of the workpiece 125 and the cathode terminal 120 .
- the electroplating system 200 further includes an anode terminal 240 and an anode terminal 260 that are disposed in the electrolytic plating solution 110 on a second (right or top) side of the workpiece 125 and the cathode terminal 120 that is opposite the first side.
- variable power supply 235 is coupled between the cathode terminal 120 and the anode terminal 230
- a variable power supply 245 is coupled between the cathode terminal 120 and the anode terminal 240
- a variable power supply 255 is coupled between the cathode terminal 120 and the anode terminal 250
- a variable power supply 265 is coupled between the cathode terminal 120 and the anode terminal 260 .
- the variable power supply 235 provides a plating current from the anode terminal 230 to the cathode terminal 120 for plating a first portion of plateable surfaces on the left side of the workpiece 125 .
- variable power supply 255 provides a plating current from the anode terminal 250 to the cathode terminal 120 for plating a second portion of plateable surfaces on the left side of the workpiece 125 .
- the plating current provided by the variable power supply 235 can affect plating of plateable surfaces of an upper half of the workpiece 125 on the left side the workpiece 125
- the plating current provided by the variable power supply 255 can affect plating of plateable surfaces of a lower half of the workpiece 125 on the left side the workpiece 125 .
- variable power supply 245 of the electroplating system 200 provides a plating current from the anode terminal 240 to the cathode terminal 120 for plating a first portion of plateable surfaces on the right side of the workpiece 125 .
- variable power supply 265 provides a plating current from the anode terminal 260 to the cathode terminal 120 for plating a second portion of plateable surfaces on the right side of the workpiece 125 .
- the plating current provided by the variable power supply 245 can affect plating of plateable surfaces of an upper half of the workpiece 125 on the right side the workpiece 125
- the plating current provided by the variable power supply 265 can affect plating of plateable surfaces of a lower half of the workpiece 125 on the right side the workpiece 125
- the cathode terminal 120 is a common cathode terminal for the anode terminal 230 , the variable power supply 235 , the anode terminal 240 , the variable power supply 245 , the anode terminal 250 , the variable power supply 255 , the anode terminal 260 , and the variable power supply 265 .
- the base portion 230 a , the base portion 240 a , the base portion 250 a , and the base portion 260 a can be formed of a material with low electrical resistance that is not prone to consumption in the electrolytic plating solution 110 , e.g., during electroplating of the workpiece 125 .
- the base portions of the anode terminals of the electroplating system 200 can include respective titanium anode baskets, or equivalent anode materials.
- the soluble portions 230 b , 240 b , 250 b and 260 b of the anode terminals 230 , 240 , 250 and 260 would be periodically replenished, such as in implementations of the electroplating system 200 used in semiconductor device assembly manufacturing processes.
- the base portions 230 a , 240 a , 250 a and 260 a of the anode terminals 230 , 240 , 250 and 260 may also be periodically replaced, though less frequently than the soluble portions.
- variable power supplies 235 , 245 , 255 and 265 of the electroplating system 200 can each be a respective variable voltage power supply.
- the variable power supplies 235 , 245 , 255 and 265 can each be a respective variable current power supply, e.g., can each include a variable current source.
- respective plating voltages and/or plating currents can be provided by the variable power supplies 235 , 245 , 255 and 265 .
- the variable power supplies 235 , 245 , 255 and 265 can each be adjusted, or configured to provide respective plating currents based on respective areas of plateable surfaces on each side of the workpiece 125 .
- variable power supply 235 and the variable power supply 255 can be adjusted such that they provide a combined plating current (e.g., the plating current of the variable power supply 235 plus the plating current of the variable power supply 255 ) that is nine times greater than a combined plating current provided by the variable power supply 245 and the variable power supply 265 .
- variable power supplies of the electroplating system 200 can provide plating currents such that plating currents with equal, or approximately equal, current density, e.g., in A/dm 2 , are provided for plating plateable surfaces on the left (bottom) side of the workpiece 125 and plateable surfaces on the right (top) side of the workpiece 125 .
- the variable power supply 235 and the variable power supply 255 can each be adjusted to respectively provide forty-five percent of a total plating current in the electroplating system 200
- the variable power supply 245 and the variable power supply 265 can each be adjusted to respectively provide five percent of a total plating current in the electroplating system 200 .
- These individual assemblies can be singulated (separated, etc.) into the individual semiconductor device assemblies, e.g., after plating is performed on the strip 300 using the electroplating system 100 or the electroplating system 200 .
- singulation can be performed using a saw, a laser cutter, a plasma cutter, etc.
- the exposed portions of the leadframe strip 305 disposed around the block molded portions 310 a - 310 c can provide mechanical support for individual leadframes of the strip 300 , which are also separated from one another during a singulation process. Accordingly, in this example, the exposed portions of the leadframe strip 305 are plateable surfaces, while the block molded portions 310 a - 310 c are not plateable surfaces.
- the leadframe strip 305 can be electrically coupled with a cathode terminal of an electroplating system, such as the cathode terminal 120 of the electroplating system 100 or the electroplating system 200 , during electroplating of the strip 300 .
- FIG. 4 an opposite side (e.g., bottom side) of the strip 300 from the (top) side shown in the view of FIG. 3 is illustrated, which shows the individual semiconductor assemblies, e.g., with a single semiconductor assembly indicated by a semiconductor assembly 400 .
- FIG. 5 an example pattern of plateable surfaces of the semiconductor assembly 400 is illustrated. For instance, the example semiconductor assembly 400 shown in FIG.
- a signal pad 420 a includes a signal pad 420 a , a signal pad 420 b , a signal pad 420 c , a signal pad 420 d , a signal pad 420 e , a signal pad 420 f , a signal pad 420 g , and a signal pad 420 h , which can be portions of a leadframe (e.g., a copper leadframe) of the semiconductor assembly 400 included in the leadframe strip 305 that are exposed through a molding compound 410 .
- the bottom side of the semiconductor assembly 400 also includes a die attach paddle 425 , which can also be included in the leadframe for the semiconductor assembly 400 as part of the leadframe strip 305 .
- plateable surfaces of the bottom side of the strip 300 include exposed portions of the leadframe strip 305 disposed around each of the block molded portions 310 a - 310 c , as well as the signal pads 420 a - 420 g and the die attach paddle 425 of each of the semiconductor assemblies 400 (e.g., approximately 1800 individual semiconductor device assemblies) of the strip 300 . Accordingly, an area of the plateable surfaces of the bottom side of the strip 300 (as shown in FIG. 4 ) is greater than an area of the plateable surfaces of the top side of the strip 300 (as shown in FIG. 3 and described above).
- the ratio of plateable surface area of the bottom side to plateable surface area of the top side can be nine to one, or could have other ratios, e.g., twenty to one, fifteen to one, ten to one, seven to one, five to one, etc., depending on the particular implementation.
- appropriate plating voltages and/or plating currents can be used to affect electroplating of the plateable surfaces of the strip 300 , and to achieve plating thickness uniformity with a desired tolerance (e.g., 10% variation or less) between the top side plateable surfaces and the bottom side plateable surfaces.
- FIG. 6 is a flowchart illustrating an example method 600 for electroplating.
- the method 600 can be implemented by the electroplating system 200 of FIG. 2 . Accordingly, for purposes of illustration, the method 600 is described with further reference to FIG. 2 .
- similar methods can be performed by electroplating systems having other configurations.
- the electroplating system 100 could implement a similar method with the operations of blocks 650 and 660 being omitted.
- additional operations can be added to the method 600 .
- additional variable plating voltages and/or currents can be provided by additional variable power supplies.
- the particular operations of an electroplating method will depend, at least in part, on one or more of the workpiece being plated, the electroplating system used, a ratio of surface areas of plateable surfaces on each side of the workpiece, etc.
- the method 600 further includes, at block 640 , providing, from the anode terminal 240 , a second plating current, e.g., from the variable power supply 245 , for plating at least a first portion of plateable surfaces on the right side of the workpiece 125 (e.g., set at 6% of total plating current to account for clipped area being plated).
- the method 600 also includes, at block 650 , providing, from the anode terminal 250 , a third plating current, e.g., from the variable power supply 255 , for plating at least a second portion of plateable surfaces on the left side of the workpiece 125 (e.g., set at 40% of total plating current).
- the method still further includes, at block 660 , providing, from the anode terminal 260 , a fourth plating current, e.g., from the variable power supply 265 , for plating at least a second portion of plateable surfaces on the right side of the workpiece 125 (e.g., set at 4% of total plating current).
- a fourth plating current e.g., from the variable power supply 265
- the plating currents of blocks 630 - 660 of the method 600 can be provided by varying a voltage and/or a current of the corresponding variable power supplies.
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Abstract
Description
- This description relates to electroplating, such as electroplating of semiconductor device assemblies.
- Electrochemical processes, such as electroplating, can be used to plate metal surfaces (e.g., exposed copper surfaces) of semiconductor device assemblies (device assemblies, assemblies, etc.), such as exposed metal surfaces of a leadframe, metallic seed layers on a substrate, direct-bonded metal layers on a substrate, etc. For instance, such processes can be used to perform tin plating (or plating with other metals), where such plating can prevent corrosion (e.g., oxidation) of corresponding metal surfaces, such as copper, as well as improve solderability of metal surfaces of a semiconductor device assembly. Prior electroplating approaches can have certain drawbacks, however, such as non-uniform plating thickness, where a plating thickness for metal surfaces on one side of an assembly is undesirably thicker than a plating thickness for metal surfaces on an opposite side of the assembly. Such thicker plating can result in leakage and or electrical shorts (e.g., between signal pins or pads and/or power supply pins and/or terminals, etc.) due to excess plating material creating undesired conduction pathways. Also, such prior approaches can increase overall operating and/or product costs due to consumption of excess plating material.
- In a general aspect, an electroplating system includes a vessel, an electrolytic plating solution in the vessel, a cathode terminal, first and second anode terminals, and first and second variable power supplies. The cathode terminal is configured to electrically connect with a workpiece that is submerged in the electrolytic plating solution. The first anode terminal is in the electrolytic plating solution on a first side of the workpiece. The second anode terminal is in the electrolytic plating solution on a second side of the workpiece opposite the first side. The first variable power supply is coupled between the cathode terminal and the first anode terminal. The second variable power supply is coupled between the cathode terminal and the second anode terminal.
- Implementations can include one or more of the following features, alone or in combination. For example, the first variable power supply can include a first variable voltage power supply, and the second variable power supply can include a second variable voltage power supply.
- The first variable power supply can include a first variable current power supply, and the second variable power supply can include a second variable current power supply.
- The first anode terminal and the second anode terminal can each include a solid plating material that is soluble in the electrolytic plating solution.
- The electrolytic plating solution can include methane sulfonic acid (MSA) and a liquid plating material.
- The electroplating system can include a third anode terminal in the electrolytic plating solution on the first side of the workpiece, and a fourth anode terminal in the electrolytic plating solution on the second side of the workpiece. The electroplating system can include a third variable power supply that is coupled between the cathode terminal and the third anode terminal, and a fourth variable power supply that is coupled between the cathode terminal and the fourth anode terminal.
- The third variable power supply can include a first variable voltage power supply, and the fourth variable power supply can include a second variable voltage power supply.
- The third variable power supply can include a first variable current power supply, and the fourth variable power supply can include a second variable current power supply.
- The workpiece can be a strip of block molded semiconductor device assemblies.
- In another general aspect, a method includes electrically coupling a workpiece with a common cathode terminal of an electroplating system and submerging the workpiece in an electrolytic plating solution. The method further includes supplying, from a first anode terminal submerged in the electrolytic plating solution, a first plating current for electroplating at least one plateable surface on a first side of the workpiece. The method further includes supplying, from a second anode terminal submerged in the electrolytic plating solution, a second plating current for electroplating at least one plateable surface on a second side of the workpiece. The second plating current is different than the first plating current, and the second side of the workpiece is opposite the first side of the workpiece.
- Implementations can include one or more of the following features, alone or in combination. For example, the workpiece can be a strip of block molded semiconductor device assemblies.
- The first plating current can be based on an area of the at least one plateable surface on the first side of the workpiece. The second plating current can be based on an area of the at least one plateable surface on the second side of the workpiece.
- The first plating current can be used for plating a first portion of the at least one plateable surface on the first side of the workpiece, and the second plating current can be used for plating a first portion of the at least one plateable surface on the second side of the workpiece. The method can include supplying, from a third anode terminal submerged in the electrolytic plating solution, a third plating current for electroplating a second portion of the at least one plateable surface on the first side of the workpiece. The method can also include supplying, from a fourth anode terminal submerged in the electrolytic plating solution, a fourth plating current for electroplating a second portion of the at least one plateable surface on the second side of the workpiece.
- The third plating current can be different than the first plating current, and the fourth plating current can be different than the second plating current.
- The third plating current can be equal to the first plating current, and the fourth plating current can be equal to the second plating current.
- The third plating current can be equal to the first plating current, and the fourth plating current can be different than the second plating current.
- In another general aspect, an electroplating system includes a vessel, an electrolytic plating solution in the vessel including a liquid plating material, a common cathode terminal, a first anode terminal, a second anode terminal, a third anode terminal, a fourth anode terminal, a first variable power supply, a second variable power supply, a third variable power supply, and a fourth variable power supply.
- The common cathode terminal is configured to electrically connect with a workpiece that is submerged in the electrolytic plating solution. The first and second anode terminals are in the electrolytic plating solution on a first side of the workpiece. The third anode terminal and fourth anode terminals are in the electrolytic plating solution on a second side of the workpiece opposite the first side. The first variable power supply is coupled between the common cathode terminal and the first anode terminal. The second variable power supply is coupled between the common cathode terminal and the second anode terminal. The third variable power supply is coupled between the common cathode terminal and the third anode terminal. The fourth variable power supply is coupled between the common cathode terminal and the fourth anode terminal.
- Implementations can include one or more of the following features, alone or in combination. For example, the first variable power supply can include a first variable voltage power supply. The second variable power supply can include a second variable voltage power supply. The third variable power supply can include a third variable voltage power supply. The fourth variable power supply can include a fourth variable voltage power supply.
- The first variable power supply can include a first variable current power supply. The second variable power supply can include a second variable current power supply. The third variable power supply can include a third variable current power supply. The fourth variable power supply can include a fourth variable current power supply.
- The workpiece can be a strip of block molded semiconductor device assemblies.
-
FIG. 1 is a diagram schematically illustrating an example electroplating system. -
FIG. 2 is a diagram schematically illustrating another example electroplating system. -
FIG. 3 is a diagram illustrating an example strip of block molded semiconductor device assemblies viewed from a first (e.g., top) side. -
FIG. 4 is a diagram illustrating the strip of block molded semiconductor device assemblies ofFIG. 3 viewed from a second (e.g., bottom) side. -
FIG. 5 is a diagram illustrating plated areas (e.g., on a bottom side) of a semiconductor device assembly of the strip of block molded semiconductor device assemblies ofFIGS. 3 and 4 . -
FIG. 6 is a flowchart illustrating an example method for electroplating. - This disclosure is directed to electroplating systems (plating systems, systems, etc.) and associated methods that address at least some of the drawbacks of previous approaches that were noted above. For instance, plating systems and methods described herein can reduce non-uniformity in plating thicknesses on surfaces (e.g., plateable surfaces) on opposite sides of semiconductor device assemblies, such as strips of block molded semiconductor device assemblies or packages. Such block molded strips can have different plateable surface areas on opposite sides, e.g., a first plateable surface area on a top side of the strip, and a second, different plateable surface area on a bottom side of the strip. Molding compound surfaces, for purposes of this disclosure, are not plateable surfaces.
- In disclosed approaches, separate, variable power supplies (e.g., variable voltage and/or current) can be used to supply respective plating currents for plateable surfaces on each side of a semiconductor assembly (e.g., based on corresponding areas of the respective plateable surfaces), rather than providing a single, fixed plating current, as in prior approaches. For instance, if the respective plateable surfaces have different areas and/or are not symmetric, prior plating approaches can result in undesirably thicker plating on the plateable surfaces on a side of the assembly where an area of the plateable surfaces is relatively smaller area, e.g., as compared with an area of the plateable surfaces on the opposite side.
- In contrast, using example implementations described herein, different plating currents can be provided (e.g., on each side of an assembly) such that equal, or approximately equal, plating current densities (e.g., in amps (A) per decimeter-squared (dm2)) are used for respectively plating surfaces on each side, e.g., on a top side and a bottom side, of an assembly, where the respective plateable surfaces are not symmetric and/or have different surface areas.
- Further, example approaches described herein can reduce manufacturing and/or product costs by reducing an amount of plating material used as a result of improved plating thickness uniformity. Additionally, by improving plating uniformity, leakage and/or electrical shorts can be prevented, particularly in assemblies with tight pitches (e.g., small distances between signal pins, signal pads, and/or other plated surfaces), as application of undesired excess plating material causing such leakage and/or shorts can be prevented. Accordingly, as compared with prior approaches, the disclosed implementations can facilitate pitch reduction. Such pitch reduction can, in turn, allow for reducing respective sizes of semiconductor device assemblies, which can achieve additional operational and/or product cost savings as a result, such as reduced material costs.
-
FIG. 1 is a diagram schematically illustrating anexample electroplating system 100. Theelectroplating system 100 includes avessel 105 in which anelectrolytic plating solution 110 is disposed. In some implementations, theelectrolytic plating solution 110 can include methane sulfonic acid (MSA) or equivalent electrolytic solution (such as nickel sulfamate or copper sulfate) and a liquid metal solution, where the liquid metal solution includes a metal, e.g., a liquid plating metal, such as liquid tin, that is used to plateable surfaces, such as exposed metal surfaces, of aworkpiece 125 that are submerged, e.g., disposed, in theelectrolytic plating solution 110. In some implementations, theelectrolytic plating solution 110 can include one or more additives to facilitate efficient electroplating. Other surface of theworkpiece 125 disposed in theelectrolytic plating solution 110 may be non-plateable, such as molding compound surfaces. - As shown in
FIG. 1 , theelectroplating system 100 includes asparger 115 that is disposed within theelectrolytic plating solution 110 in thevessel 105. In some implementations, a position of thesparger 115 within thevessel 105 can be adjusted, e.g., in the view ofFIG. 1 , vertically adjusted based on a size of theworkpiece 125 being plated. As indicated by thearrows 115 a inFIG. 1 , thesparger 115 can generate a fluidic flow within theelectrolytic plating solution 110. This fluidic flow can agitate the electrolytic plating solution 110 (e.g., to maintain homogeneity of theelectrolytic plating solution 110 and/or to facilitate plating efficiency). In some implementations, thesparger 115 can create a laminar flow of theelectrolytic plating solution 110 over theworkpiece 125. - The
electroplating system 100 ofFIG. 1 includes acathode terminal 120. Thecathode terminal 120 includes aclip 120 a that is used to physically and electrically couple thecathode terminal 120 with theworkpiece 125, e.g., to electrically couple thecathode terminal 120 with surfaces of theworkpiece 125 to be plated, such as a leadframe strip including a plurality of semiconductor device assemblies, e.g., a strip of block molded device assemblies. While a single clip (clip 120 a) is shown inFIG. 1 , in some implementations thecathode terminal 120 can include a plurality of clips for electrically coupling to theworkpiece 125, and for positioning theworkpiece 125 within theelectrolytic plating solution 110. - In the example of
FIG. 1 , theelectroplating system 100 also includes ananode terminal 130 disposed on a first side of theworkpiece 125 and thecathode terminal 120, and ananode terminal 140 disposed on a second side of theworkpiece 125 and thecathode terminal 120 that is opposite the first side. That is, in this view, theanode terminal 130 is disposed in theelectrolytic plating solution 110 on the left side of thecathode terminal 120 and theworkpiece 125, while theanode terminal 140 is disposed in theelectrolytic plating solution 110 on the right side of thecathode terminal 120 and theworkpiece 125. - As shown in
FIG. 1 , avariable power supply 135 is coupled between thecathode terminal 120 and theanode terminal 130, while avariable power supply 145 is coupled between thecathode terminal 120 and theanode terminal 140. In this example, thevariable power supply 135 provides a plating current from theanode terminal 130 to thecathode terminal 120 for plating plateable surfaces on the left side of theworkpiece 125, which could also be referred to as a bottom side of theworkpiece 125 in some implementations. Thevariable power supply 145 provides a plating current from theanode terminal 140 to thecathode terminal 120 for plating plateable surfaces on the right side of theworkpiece 125, which could also be referred to as a top side of theworkpiece 125 in some implementations. That is, in theelectroplating system 100, thecathode terminal 120 is a common cathode terminal for theanode terminal 130, thevariable power supply 135, theanode terminal 140 and thevariable power supply 145. - In the
electroplating system 100, theanode terminal 130 includes abase portion 130 a and asoluble portion 130 b disposed on thebase portion 130 a, and theanode terminal 140 includes abase portion 140 a and asoluble portion 140 b disposed on thebase portion 140 a. In this example, thebase portion 130 a and thebase portion 140 a can be formed of a material with low electrical resistance that is not prone to consumption in theelectrolytic plating solution 110, e.g., during electroplating of theworkpiece 125. For instance, in some implementations thebase portion 130 a and thebase portion 140 a can each include a titanium anode basket, or an equivalent anode material. - The
soluble portion 130 b and thesoluble portion 140 b can include a solid plating metal, such as tin or other plating metal, which is soluble in theelectrolytic plating solution 110. Accordingly, thesoluble portion 130 b and thesoluble portion 140 b, in this example, are consumed, at least in part, during electroplating of theworkpiece 125. That is, thesoluble portion 130 b and thesoluble portion 140 b provide consumable plating metal that, in combination with plating metal already in solution in theelectrolytic plating solution 110, is used to plate plateable surfaces of the workpiece 125 (and/or other workpieces). Accordingly, at least thesoluble portion 130 b of theanode terminal 130 and thesoluble portion 140 b of theanode terminal 140 would be periodically replenished, such as in implementations of theelectroplating system 100 used in semiconductor device assembly manufacturing processes. In some implementations, thebase portion 130 a and thebase portion 140 a may also be periodically replaced, though less frequently than thesoluble portion 130 b and thesoluble portion 140 b. - In some implementations, the
variable power supply 135 and thevariable power supply 145 of theelectroplating system 100 can each be a respective variable voltage power supply. In some implementations, thevariable power supply 135 and thevariable power supply 145 can each be a respective variable current power supply, e.g., can each include a variable current source. In this example, respective plating voltages and/or plating currents can be provided by thevariable power supply 135 and thevariable power supply 145. For instance, thevariable power supply 135 and thevariable power supply 145 can each be adjusted, or configured to provide respective plating currents based on respective areas of plateable surfaces on each side of theworkpiece 125, e.g., determined based on a ratio of the plateable surfaces area on each side of theworkpiece 125. - For instance, as an example, if an area of plateable surfaces on the left (bottom) side of the
workpiece 125 is nine times that of an area of plateable surfaces on the right (top) side of theworkpiece 125, thevariable power supply 135 and thevariable power supply 145 can be adjusted such that thevariable power supply 135 provides a plating current that is nine times greater than a plating current provided by thevariable power supply 145, such that a current density, e.g., in A/dm2, of the plating current provided by thevariable power supply 135 for plating plateable surfaces on the left (bottom) side of theworkpiece 125 is equal, or approximately equal, to a current density of the plating current provided by thevariable power supply 145 for plating plateable surfaces on the right (top) side of theworkpiece 125. That is, in the example, thevariable power supply 135 can be adjusted to provide ninety percent of a total plating current in theelectroplating system 100, while thevariable power supply 145 can be adjusted to provide ten percent of the total plating current. It is noted that the plating current provided by thevariable power supply 135 and thevariable power supply 145 can also plate plateable surfaces that are disposed between the left and right sides of theworkpiece 125, e.g., edges of a leadframe strip of theworkpiece 125. - In some implementations, the
variable power supply 135 and thevariable power supply 145 can be variable voltage power supplies that are adjustable to provide respective plating voltages between zero and twenty-four volts (V). In some implementations, thevariable power supply 135 and thevariable power supply 145 can be variable current power supplies that are adjustable to provide respective plating currents between zero and one-hundred-fifty amperes (A). In some implementations, thevariable power supply 135 and thevariable power supply 145 can be configured to allow for adjustment of one of, or both of a provided voltage or a provided current. -
FIG. 2 is a diagram schematically illustrating anotherexample electroplating system 200. Theelectroplating system 200 includes like elements as theelectroplating system 100, which are referenced with the same 100 series reference numbers inFIG. 2 as inFIG. 1 . Accordingly, for purposes of brevity, those like elements of theelectroplating system 200 are not described again with reference toFIG. 2 . - In the example of
FIG. 2 , theelectroplating system 200 also includes ananode terminal 230 and ananode terminal 250 that are disposed in theelectrolytic plating solution 110 on a first (left or bottom) side of theworkpiece 125 and thecathode terminal 120. Theelectroplating system 200 further includes ananode terminal 240 and ananode terminal 260 that are disposed in theelectrolytic plating solution 110 on a second (right or top) side of theworkpiece 125 and thecathode terminal 120 that is opposite the first side. - As shown in
FIG. 2 , avariable power supply 235 is coupled between thecathode terminal 120 and theanode terminal 230, avariable power supply 245 is coupled between thecathode terminal 120 and theanode terminal 240, avariable power supply 255 is coupled between thecathode terminal 120 and theanode terminal 250, and avariable power supply 265 is coupled between thecathode terminal 120 and theanode terminal 260. In this example, thevariable power supply 235 provides a plating current from theanode terminal 230 to thecathode terminal 120 for plating a first portion of plateable surfaces on the left side of theworkpiece 125. Likewise, thevariable power supply 255 provides a plating current from theanode terminal 250 to thecathode terminal 120 for plating a second portion of plateable surfaces on the left side of theworkpiece 125. For instance, the plating current provided by thevariable power supply 235 can affect plating of plateable surfaces of an upper half of theworkpiece 125 on the left side theworkpiece 125, while the plating current provided by thevariable power supply 255 can affect plating of plateable surfaces of a lower half of theworkpiece 125 on the left side theworkpiece 125. - Similarly, the
variable power supply 245 of theelectroplating system 200 provides a plating current from theanode terminal 240 to thecathode terminal 120 for plating a first portion of plateable surfaces on the right side of theworkpiece 125. Likewise, thevariable power supply 265 provides a plating current from theanode terminal 260 to thecathode terminal 120 for plating a second portion of plateable surfaces on the right side of theworkpiece 125. For instance, the plating current provided by thevariable power supply 245 can affect plating of plateable surfaces of an upper half of theworkpiece 125 on the right side theworkpiece 125, while the plating current provided by thevariable power supply 265 can affect plating of plateable surfaces of a lower half of theworkpiece 125 on the right side theworkpiece 125. In theelectroplating system 200, similar to theelectroplating system 100, thecathode terminal 120 is a common cathode terminal for theanode terminal 230, thevariable power supply 235, theanode terminal 240, thevariable power supply 245, theanode terminal 250, thevariable power supply 255, theanode terminal 260, and thevariable power supply 265. - In the
electroplating system 200, theanode terminal 230 includes abase portion 230 a and asoluble portion 230 b disposed on thebase portion 230 a, theanode terminal 240 includes abase portion 240 a and asoluble portion 240 b disposed on thebase portion 240 a, theanode terminal 250 includes abase portion 250 a and asoluble portion 250 b disposed on thebase portion 250 a, and theanode terminal 260 includes abase portion 260 a and asoluble portion 260 b disposed on thebase portion 260 a. In this example, as with the anodes of theelectroplating system 100, thebase portion 230 a, thebase portion 240 a, thebase portion 250 a, and thebase portion 260 a can be formed of a material with low electrical resistance that is not prone to consumption in theelectrolytic plating solution 110, e.g., during electroplating of theworkpiece 125. For instance, in some implementations the base portions of the anode terminals of theelectroplating system 200 can include respective titanium anode baskets, or equivalent anode materials. - The
230 b, 240 b, 250 b and 260 b can include a solid plating metal, such as tin or other plating metal, which is soluble in thesoluble portions electrolytic plating solution 110. Accordingly, the soluble portions of the anode terminals, in this example, are consumed, at least in part, during electroplating of theworkpiece 125. That is, the soluble portions of the 230, 240, 250 and 260 provide consumable plating metal that, in combination with plating metal already in solution in theanode terminals electrolytic plating solution 110, is used to plate plateable surfaces of the workpiece 125 (and/or other workpieces). Accordingly, at least the 230 b, 240 b, 250 b and 260 b of thesoluble portions 230, 240, 250 and 260 would be periodically replenished, such as in implementations of theanode terminals electroplating system 200 used in semiconductor device assembly manufacturing processes. In some implementations, the 230 a, 240 a, 250 a and 260 a of thebase portions 230, 240, 250 and 260 may also be periodically replaced, though less frequently than the soluble portions.anode terminals - In some implementations, the
235, 245, 255 and 265 of thevariable power supplies electroplating system 200 can each be a respective variable voltage power supply. In some implementations, the 235, 245, 255 and 265 can each be a respective variable current power supply, e.g., can each include a variable current source. In this example, respective plating voltages and/or plating currents can be provided by thevariable power supplies 235, 245, 255 and 265. For instance, thevariable power supplies 235, 245, 255 and 265 can each be adjusted, or configured to provide respective plating currents based on respective areas of plateable surfaces on each side of thevariable power supplies workpiece 125. - For instance, in this example, as in the example of
FIG. 1 , if an area of plateable surfaces on the left (bottom) side of theworkpiece 125 is nine times larger than an area of plateable surfaces on the right (top) side of theworkpiece 125, thevariable power supply 235 and thevariable power supply 255 can be adjusted such that they provide a combined plating current (e.g., the plating current of thevariable power supply 235 plus the plating current of the variable power supply 255) that is nine times greater than a combined plating current provided by thevariable power supply 245 and thevariable power supply 265. That is, the variable power supplies of theelectroplating system 200 can provide plating currents such that plating currents with equal, or approximately equal, current density, e.g., in A/dm2, are provided for plating plateable surfaces on the left (bottom) side of theworkpiece 125 and plateable surfaces on the right (top) side of theworkpiece 125. For instance, in this example, thevariable power supply 235 and thevariable power supply 255 can each be adjusted to respectively provide forty-five percent of a total plating current in theelectroplating system 200, while thevariable power supply 245 and thevariable power supply 265 can each be adjusted to respectively provide five percent of a total plating current in theelectroplating system 200. It is noted that the plating currents provided by the 235, 245, 255 and 265 can also plate plateable surfaces that are disposed between the left and right sides of thevariable power supplies workpiece 125, e.g., edges of leadframe strip of theworkpiece 125. - In some implementations, the
235, 245, 255 and 265 can be variable voltage power supplies that are adjustable to provide respective plating voltages between zero and twenty-four volts (V). In some implementations, thevariable power supplies 235, 245, 255 and 265 can be variable current power supplies that are adjustable to provide respective plating currents between zero and one-hundred amperes (A). In some implementations, thevariable power supplies 235, 245, 255 and 265 can each be configured to allow for adjustment of one of, or both of, a provided voltage or a provided current.variable power supplies -
FIG. 3 is a diagram illustrating anexample strip 300 of block molded semiconductor device assemblies viewed from a first (e.g., top) side. By way of example, thestrip 300 can be theworkpiece 125 of theelectroplating system 100 and/or theelectroplating system 200. Of course, theworkpiece 125 can take other forms, such as other strips of molded semiconductor device assemblies, bare (e.g., unmolded) leadframes, one or more direct bonded metal substrates (e.g., with or without molded portions), etc. - In
FIG. 3 , the view of thestrip 300 can correspond with the right (top) side of theworkpiece 125 as illustrated in the examples ofFIGS. 1 and 2 discussed above. For instance, thestrip 300 includes aleadframe strip 305, a block moldedportion 310 a, a block moldedportion 310 b, and a block moldedportion 310 c. In this example, each of the block molded portions 310 a-310 c can each include a plurality of individual semiconductor device assemblies, e.g., approximately nine-hundred per block molded portion in this example. These individual assemblies can be singulated (separated, etc.) into the individual semiconductor device assemblies, e.g., after plating is performed on thestrip 300 using theelectroplating system 100 or theelectroplating system 200. Such singulation can be performed using a saw, a laser cutter, a plasma cutter, etc. - As shown in
FIG. 3 , the exposed portions of theleadframe strip 305 disposed around the block molded portions 310 a-310 c can provide mechanical support for individual leadframes of thestrip 300, which are also separated from one another during a singulation process. Accordingly, in this example, the exposed portions of theleadframe strip 305 are plateable surfaces, while the block molded portions 310 a-310 c are not plateable surfaces. In some implementations, theleadframe strip 305 can be electrically coupled with a cathode terminal of an electroplating system, such as thecathode terminal 120 of theelectroplating system 100 or theelectroplating system 200, during electroplating of thestrip 300. - Referring now to
FIG. 4 , an opposite side (e.g., bottom side) of thestrip 300 from the (top) side shown in the view ofFIG. 3 is illustrated, which shows the individual semiconductor assemblies, e.g., with a single semiconductor assembly indicated by asemiconductor assembly 400. Referring toFIG. 5 , an example pattern of plateable surfaces of thesemiconductor assembly 400 is illustrated. For instance, theexample semiconductor assembly 400 shown inFIG. 5 includes asignal pad 420 a, asignal pad 420 b, asignal pad 420 c, asignal pad 420 d, asignal pad 420 e, asignal pad 420 f, asignal pad 420 g, and asignal pad 420 h, which can be portions of a leadframe (e.g., a copper leadframe) of thesemiconductor assembly 400 included in theleadframe strip 305 that are exposed through amolding compound 410. As also shown inFIG. 4 , the bottom side of thesemiconductor assembly 400 also includes a die attachpaddle 425, which can also be included in the leadframe for thesemiconductor assembly 400 as part of theleadframe strip 305. - Taking
FIGS. 4 and 5 together, plateable surfaces of the bottom side of thestrip 300 include exposed portions of theleadframe strip 305 disposed around each of the block molded portions 310 a-310 c, as well as the signal pads 420 a-420 g and the die attachpaddle 425 of each of the semiconductor assemblies 400 (e.g., approximately 1800 individual semiconductor device assemblies) of thestrip 300. Accordingly, an area of the plateable surfaces of the bottom side of the strip 300 (as shown inFIG. 4 ) is greater than an area of the plateable surfaces of the top side of the strip 300 (as shown inFIG. 3 and described above). For instance, in an example implementation the ratio of plateable surface area of the bottom side to plateable surface area of the top side can be nine to one, or could have other ratios, e.g., twenty to one, fifteen to one, ten to one, seven to one, five to one, etc., depending on the particular implementation. Using the approaches described herein, appropriate plating voltages and/or plating currents can be used to affect electroplating of the plateable surfaces of thestrip 300, and to achieve plating thickness uniformity with a desired tolerance (e.g., 10% variation or less) between the top side plateable surfaces and the bottom side plateable surfaces. -
FIG. 6 is a flowchart illustrating anexample method 600 for electroplating. In this example, themethod 600 can be implemented by theelectroplating system 200 ofFIG. 2 . Accordingly, for purposes of illustration, themethod 600 is described with further reference toFIG. 2 . In other implementations, similar methods can be performed by electroplating systems having other configurations. For instance, theelectroplating system 100 could implement a similar method with the operations of 650 and 660 being omitted. In other implementations, additional operations can be added to theblocks method 600. For instance, additional variable plating voltages and/or currents can be provided by additional variable power supplies. The particular operations of an electroplating method will depend, at least in part, on one or more of the workpiece being plated, the electroplating system used, a ratio of surface areas of plateable surfaces on each side of the workpiece, etc. - The
method 600 ofFIG. 6 , atblock 610, includes coupling theworkpiece 125 with thecathode terminal 120, e.g., via theclip 120 a. Atblock 620, themethod 600 includes submerging theworkpiece 125 in theelectrolytic plating solution 110. Themethod 600 includes, atblock 630, providing, from theanode terminal 230, a first plating current, e.g., from thevariable power supply 235, for plating at least a first portion of plateable surfaces on the left side of the workpiece 125 (e.g., set at 50% of total plating current to account for clipped area being plated). Themethod 600 further includes, atblock 640, providing, from theanode terminal 240, a second plating current, e.g., from thevariable power supply 245, for plating at least a first portion of plateable surfaces on the right side of the workpiece 125 (e.g., set at 6% of total plating current to account for clipped area being plated). Themethod 600 also includes, atblock 650, providing, from theanode terminal 250, a third plating current, e.g., from thevariable power supply 255, for plating at least a second portion of plateable surfaces on the left side of the workpiece 125 (e.g., set at 40% of total plating current). The method still further includes, atblock 660, providing, from theanode terminal 260, a fourth plating current, e.g., from thevariable power supply 265, for plating at least a second portion of plateable surfaces on the right side of the workpiece 125 (e.g., set at 4% of total plating current). As described herein, the plating currents of blocks 630-660 of themethod 600 can be provided by varying a voltage and/or a current of the corresponding variable power supplies. - It will be understood that, in the foregoing description, when an element, such as a layer, a region, a substrate, or component is referred to as being on, connected to, electrically connected to, coupled to, or electrically coupled to another element, it may be directly on, connected or coupled to the other element, or one or more intervening elements may be present. In contrast, when an element is referred to as being directly on, directly connected to or directly coupled to another element or layer, there are no intervening elements or layers present. Although the terms directly on, directly connected to, or directly coupled to may not be used throughout the detailed description, elements that are shown as being directly on, directly connected or directly coupled can be referred to as such. The claims of the application, if any, may be amended to recite exemplary relationships described in the specification or shown in the figures.
- As used in the specification and claims, a singular form may, unless definitely indicating a particular case in terms of the context, include a plural form. Spatially relative terms (e.g., over, above, upper, under, beneath, below, lower, and so forth) are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. In some implementations, the relative terms above and below can, respectively, include vertically above and vertically below. In some implementations, the term adjacent can include laterally adjacent to or horizontally adjacent to.
- Some implementations may be implemented using various semiconductor processing and/or packaging techniques. Some implementations may be implemented using various types of semiconductor processing techniques associated with semiconductor substrates including, but not limited to, for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Silicon Carbide (SiC) and/or so forth.
- While certain features of the described implementations have been illustrated as described herein, many modifications, substitutions, changes, and equivalents will now occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the scope of the implementations. It should be understood that they have been presented by way of example only, not limitation, and various changes in form and details may be made. Any portion of the apparatus and/or methods described herein may be combined in any combination, except mutually exclusive combinations. The implementations described herein can include various combinations and/or sub-combinations of the functions, components and/or features of the different implementations described.
Claims (22)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18/341,958 US20250003105A1 (en) | 2023-06-27 | 2023-06-27 | Electroplating systems and methods |
| TW113106504A TW202500815A (en) | 2023-06-27 | 2024-02-23 | Electroplating systems and methods |
| CN202480003803.4A CN119790192A (en) | 2023-06-27 | 2024-05-02 | Electroplating system and method |
| PCT/US2024/027487 WO2025006057A1 (en) | 2023-06-27 | 2024-05-02 | Electroplating systems and methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18/341,958 US20250003105A1 (en) | 2023-06-27 | 2023-06-27 | Electroplating systems and methods |
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| US20250003105A1 true US20250003105A1 (en) | 2025-01-02 |
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| US18/341,958 Pending US20250003105A1 (en) | 2023-06-27 | 2023-06-27 | Electroplating systems and methods |
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| US (1) | US20250003105A1 (en) |
| CN (1) | CN119790192A (en) |
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| JP4822268B2 (en) * | 2005-04-19 | 2011-11-24 | ユケン工業株式会社 | Recovery type electrogalvanizing method and apparatus |
| JP5652587B2 (en) * | 2009-09-10 | 2015-01-14 | 住友金属鉱山株式会社 | Method for producing copper-coated polyimide substrate and electroplating apparatus |
| JP5795514B2 (en) * | 2011-09-29 | 2015-10-14 | アルメックスPe株式会社 | Continuous plating equipment |
| KR101564702B1 (en) * | 2013-12-23 | 2015-10-30 | (재)한국나노기술원 | Electro Plating Machine for Controlling Voltage and Current Density and Electro Plating Method thereby |
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2023
- 2023-06-27 US US18/341,958 patent/US20250003105A1/en active Pending
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| WO2025006057A1 (en) | 2025-01-02 |
| CN119790192A (en) | 2025-04-08 |
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