US20200266305A1 - Optical sensor and method for forming the same - Google Patents
Optical sensor and method for forming the same Download PDFInfo
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- US20200266305A1 US20200266305A1 US16/280,281 US201916280281A US2020266305A1 US 20200266305 A1 US20200266305 A1 US 20200266305A1 US 201916280281 A US201916280281 A US 201916280281A US 2020266305 A1 US2020266305 A1 US 2020266305A1
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Images
Classifications
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- H01L31/02327—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H01L31/02164—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H01L27/1446—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
Definitions
- the disclosure relates to an optical device, and more particularly to an optical sensor and a method for forming the same.
- Optical devices in an optical sensor may include a light collimator, a beam splitter, a focusing lens, and a linear sensor.
- the function of the light collimator is to collimate light to reduce power consumption caused by light divergence.
- the light collimator may be applied in optical sensors to increase the efficiency of fingerprint sensor devices.
- the light collimator includes transparent pillars and a light-shielding layer surrounding the transparent pillars in order to collimate light.
- the process capability limitation may easily cause the deformation and collapse of the transparent pillars.
- the collimating result may be affected and further affecting the yield of the optical sensors.
- optical sensors Although existing optical sensors have generally been adequate for their intended purposes, they have not been entirely satisfactory in all respects and need to be improved.
- the aspect ratio of the light collimator of the optical sensors in particular needs to be increased.
- the present disclosure provides an optical sensor.
- the optical sensor includes pixels disposed in a substrate and a light collimating layer disposed on the substrate.
- the light collimating layer includes a first light-shielding layer, first transparent pillars, a second light-shielding layer, and second transparent pillars.
- the first light-shielding layer is disposed on the substrate.
- the first transparent pillars through the first light-shielding layer are correspondingly disposed on the pixels.
- the second light-shielding layer is disposed on the first light-shielding layer and the first transparent pillars.
- the second transparent pillars through the second light-shielding layer are correspondingly disposed on the first transparent pillars.
- the top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.
- the present disclosure also provides a method for forming an optical sensor.
- the method for forming an optical sensor includes forming a plurality of pixels in a substrate.
- the method for forming an optical sensor further includes forming a light collimating layer on the substrate.
- Forming of the light collimating layer includes forming a plurality of first transparent pillars on the substrate.
- the first transparent pillars are correspondingly disposed on the pixels.
- Forming of the light collimating layer further includes forming a first light-shielding layer between the first transparent pillars.
- Forming of the light collimating layer further includes planarizing a top surface of the first transparent pillars and the first light-shielding layer.
- Forming of the light collimating layer further includes forming a plurality of second transparent pillars on the first transparent pillars and the first light-shielding layer.
- the second transparent pillars are correspondingly disposed on the first transparent pillars.
- Forming of the light collimating layer further includes forming a second light-shielding layer between the second transparent pillars.
- Forming of the light collimating layer further includes planarizing a top surface of the second transparent pillars and the second light-shielding layer. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.
- FIGS. 1-5 are cross-sectional representations of various stages of forming an optical sensor in accordance with some embodiments.
- FIG. 6 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- FIG. 7 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- FIG. 8 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- FIG. 9 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- FIG. 10 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- FIG. 11 is a cross-sectional representation of an optical sensor in accordance with some other embodiments.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to other elements or features as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- the terms “around,” “about,” “substantial” usually mean within 20% of a given value or range, preferably within 10%, and better within 5%, or 3%, or 2%, or 1%, or 0.5%. It should be noted that the quantity herein is a substantial quantity, which means that the meaning of “around,” “about,” “substantial” are still implied even without specific mention of the terms “around,” “about,” “substantial.”
- the embodiments of the present disclosure provide an optical sensor.
- the light collimating layer is formed in a layered manner.
- the process capability limitation may be prevented, and the total aspect ratio of the transparent pillars may be raised.
- the misalignment issue between multi-layer transparent pillars may be improved, and the production yield may be raised.
- FIGS. 1 to 5 are cross-sectional representations of various stages of forming the optical sensor 100 in accordance with some embodiments of the present disclosure.
- the substrate 102 may be a semiconductor substrate, such as a silicon substrate.
- the semiconductor substrate may be elemental semiconductors including germanium; compound semiconductors including gallium nitride, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; alloy semiconductors including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP, or a combination thereof.
- the substrate 102 may also be a semiconductor on insulator (SOI) substrate.
- SOI substrate may include a base plate, a buried oxide (BOX) layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide (BOX) layer.
- the conductivity type of the substrate 102 may be N-type or P-type.
- the substrate 102 may include various isolation features (not shown) to define active regions and electrically isolate devices in the active regions in or on the substrate 102 .
- the isolation features include shallow trench isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or combinations thereof.
- forming the isolation features may include forming an insulating layer on the substrate 102 , selectively etching the insulating layer and the substrate 102 to form trenches in the substrate 102 , growing a nitrogen-rich (e.g., silicon oxynitride) liner layer in the trenches, filling insulating materials (e.g., silicon dioxide, silicon nitride, or silicon oxynitride) in the trenches by a deposition process, performing an annealing process on the insulating materials in the trenches, and performing a planarization process such as a chemical mechanical polishing (CMP) process on the substrate 102 to remove excess insulating materials such that the insulating materials in the trenches are level with the top surface of the substrate 102 .
- CMP chemical mechanical polishing
- the substrate 102 may include various P-type doped regions and/or N-type doped regions formed by an ion implantation and/or a diffusion process (not shown).
- the doped regions may be formed into devices such as transistors, photodiodes, etc. However, these devices are merely examples, and the present disclosure is not limited thereto.
- the substrate 102 may include various conductive features, such as conductive lines or vias (not shown).
- the conductive features may be formed by aluminum, copper, tungsten, other suitable conductive materials, an alloy thereof, or a combination thereof.
- the substrate 102 may include pixels 104 .
- the pixels 104 may include a photodetector and a readout circuit.
- the photodetector may include a photodiode, a charged coupling device (CCD) sensor, a complimentary metal-oxide-semiconductor (CMOS) image sensor, an active sensor, a passive sensor, other suitable sensors, or a combination thereof.
- the readout circuit may include a transfer transistor, a reset transistor, a source-follower transistor, a select transistor, one or more other suitable transistors, or a combination thereof.
- the pixels 104 may transform the received optical signals from the photodetector into electronic signals, and process the electronic signals by the readout circuit.
- a pixel 104 may correspond to at least one photodetector, such as at least one photodiode. It should be noted that only a part of the pixels 104 are shown in FIG. 1 , and the real number of the pixels 104 of the present disclosure are not limited thereto. In some embodiments, the pixels 104 are arranged in the substrate 102 in an array.
- first transparent pillars 106 a are formed on the substrate 102 .
- a transparent layer may be blanketly formed on the substrate 102 first.
- the transparent layer may include a transparent material, which has a transmittance greater than 60% to a light with a wavelength in a range from 300 nm to 1100 nm.
- the transparent material may include a light-curable material, a thermosetting material, or a combination thereof.
- the transparent material may include polymethyl methacrylate (PMMA), perfluorocyclobutyl (PFCB) polymer, polyimide (PI), epoxy resins, other suitable materials, or a combination thereof.
- the transparent material may be deposited on the substrate 102 by a process such as spin-coating, chemical vapor deposition (CVD), physical vapor deposition (PVD) (e.g. evaporation or sputtering), electroplating, atomic layer deposition (ALD), other suitable processes, or a combination thereof
- CVD chemical vapor deposition
- PVD physical vapor deposition
- ALD atomic layer deposition
- the transparent material of the substrate 102 is selectively removed.
- the transparent material is selectively removed by a photolighography process and an etching process to form the first transparent pillars 106 a corresponding to the pixels 104 .
- the photolighography process may include photoresist coating (e.g., spin-coating), soft baking, mask alignment, pattern exposure, post-exposure baking, photoresist developing, rinsing and drying (e.g., hard baking), other suitable processes, or a combination thereof.
- the etching process may include a dry etching process (e.g., reactive ion etch (RIE), plasma etching, or ion milling), a wet etching process, or a combination thereof.
- the first transparent pillars 106 a may be formed directly by a curing process such as a light-curing process to cure the transparent materials and the unexposed portion is rinsed.
- the cross-sectional shape of the first transparent pillars 106 a may be changed by tuning the exposure focal length in the patterning process. For example, as shown in FIG. 2 , the first transparent pillars 106 a in the cross-sectional views are upwardly tapered trapezoids. In some other embodiments, the first transparent pillars 106 a may have some other shapes in the cross-sectional views, such as downwardly tapered trapezoids, rectangles, double concave shapes, other suitable shapes, or a combination thereof.
- the first light-shielding layer 108 a may include a light-shielding material which has absorptivity greater than 90% to a light with a wavelength in a range from 300 nm to 1100 nm.
- the light-shielding material may include a light-curable material, a thermosetting material, or a combination thereof.
- the light-shielding material includes non-transparent photoresist, oil ink, molding compound, solder mask, other suitable materials, or a combination thereof.
- the light-shielding material may be disposed between the first transparent pillars 106 a on the substrate 102 , and a curing process such as a UV-curing process, a thermosetting process, or a combination thereof may be performed to cure the light-shielding material to form the first light-shielding layer 108 a .
- a curing process such as a UV-curing process, a thermosetting process, or a combination thereof may be performed to cure the light-shielding material to form the first light-shielding layer 108 a .
- a single light-shielding material is used to form the first light-shielding layer 108 a . In this way, the process may be simplified, and the production time and cost may be reduced.
- a planarization process such as a chemical mechanical polishing (CMP) process may be performed on the first transparent pillars 106 a and the first light-shielding layer 108 a to remove the excess light-shielding materials so that the top surfaces of the first transparent pillars 106 a and the first light-shielding layer 108 a are coplanar. Therefore, the first light collimating layer 110 a including the first transparent pillars 106 a and the first light-shielding layer 108 a is formed.
- CMP chemical mechanical polishing
- second transparent pillars 106 b are formed on the first transparent pillars 106 a and the first light-shielding layer 108 a , and the second transparent pillars 106 b are correspondingly disposed on the first transparent pillars 106 a .
- the processes for forming the second transparent pillars 106 b are the same as, or similar to, those used to form the first transparent pillars 106 a .
- the descriptions of these processes are not repeated herein.
- the materials of the second transparent pillars 106 b and the first transparent pillars 106 a are different, depending on the demands of the process.
- the second transparent pillars 106 b and the first transparent pillars 106 a have the same shape and size in a cross-sectional view.
- the second transparent pillars 106 b and the first transparent pillars 106 a are both upwardly tapered trapezoids with the same size in the cross-sectional view. In this way, it is easier to form the light-shielding layer between the transparent pillars, preventing forming voids between the transparent pillars and the light-shielding layer and reducing the collimating effect.
- each of the second transparent pillars 106 b and each of the first transparent pillars 106 a is greater than its top surface area
- the top surface area of each of the first transparent pillars 106 a is not equal to the bottom surface area of each of the second transparent pillars 106 b .
- the top surface area of each of the first transparent pillars 106 a is smaller than the bottom surface area of each of the second transparent pillars 106 b .
- the overlay alignment while forming the second transparent pillars 106 b may be improved, preventing the overlay area of the second transparent pillars 106 b and the first transparent pillars 106 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised.
- the angle ⁇ 1 between the sidewalls and the bottom surfaces of each of the second transparent pillars 106 b and each of the first transparent pillars 106 a is between 30° and 89°. If the angle ⁇ 1 is too great, the collimating effect may be reduced due to misalignment of the second transparent pillars 106 b and the first transparent pillars 106 a . If the angle ⁇ 1 is too less, the overlay area of the second transparent pillars 106 b and the first transparent pillars 106 a may be too small and the amount of light absorbed by the pixels 104 underneath are reduced.
- a second light-shielding layer 108 b is formed between the second transparent pillars 106 b on the first light collimating layer 110 a .
- the processes for forming the second light-shielding layer 108 b are the same as, or similar to, those used to form the first light-shielding layer 108 a .
- the materials of the second light-shielding layer 108 b and the first light-shielding layer 108 a are different, depending on the demands of the process. In FIG.
- the second light-shielding layer 108 b and the first light-shielding layer 108 a are made of a single light-shielding material, and the second transparent pillars 106 b and the first transparent pillars 106 a are also made of a single transparent material, there is no obvious interface between them and the interface are shown by a dash line.
- a planarization process such as a chemical mechanical polishing (CMP) process may be performed on the second transparent pillars 106 b and the second light-shielding layer 108 b to remove the excess light-shielding materials so that the top surfaces of the second transparent pillars 106 b and the second light-shielding layer 108 b are coplanar. Therefore, the second light collimating layer 110 b including the second transparent pillars 106 b and the second light-shielding layer 108 b is formed.
- CMP chemical mechanical polishing
- the light collimating layer 110 of the optical sensor 100 includes the first light collimating layer 110 a and the second light collimating layer 110 b .
- the transparent pillars 106 include the first transparent pillars 106 a and the second transparent pillars 106 b
- the light-shielding layer 108 includes the first light-shielding layer 108 a and the second light-shielding layer 108 b .
- the aspect ratio of the transparent pillars 106 may be raised, and the transparent pillars 106 may not be deformed and collapse due to too high transparent pillars 106 in a single process.
- the aspect ratio (i.e., the total aspect ratio of the first transparent pillars 106 a and the second transparent pillars 106 b ) of the transparent pillars 106 is in a range of between 1:1 and 10:1.
- the light collimating layer 110 there may be some other optical devices on the light collimating layer 110 , such as color filters, glass, microlenses, or transparent layers (not shown).
- the incident light passes through the optical devices above the light collimating layer 110 and through the transparent pillars 106 to illuminate the pixels 104 .
- the second transparent pillars 106 b and the first transparent pillars 106 a are disposed directly above the pixels 104 . As a result, the amount of the light illuminating the pixels 104 may be increased.
- the number of layers of the light collimating layer in FIG. 5 is merely an example, and the present disclosure is not limited thereto.
- the light collimating layer may also include at least three layers of light collimating layers, depending on the demand of process and design.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- modifying the shape and the size of the transparent pillars in each layer in a cross-sectional view such as making the bottom surface area of each of the transparent pillars in each layer larger than its top surface area, a void may be prevented to be formed between the transparent pillars and the light-shielding layer.
- making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised.
- FIG. 6 is a cross-sectional representation of an optical sensor 200 in accordance with some other embodiments.
- Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein.
- the difference from the embodiments described above is that, as shown in FIG. 6 in accordance with some embodiments, the first transparent pillars 206 a and the second transparent pillars 206 b are downwardly tapered trapezoids.
- the shapes of the first transparent pillars 206 a and the second transparent pillars 206 b in the cross-sectional view may be changed by modifying the exposure focal length of the patterning process.
- the process alignment capability may be enhanced by forming the light-shielding layers 208 a and 208 b between the downwardly tapered trapezoid transparent pillars 206 a and 206 b.
- the second transparent pillars 206 b and the first transparent pillars 206 a have the same shape and size in a cross-sectional view.
- the second transparent pillars 206 b and the first transparent pillars 206 a are both downwardly tapered trapezoids with the same size in the cross-sectional view.
- the top surface area of each of the second transparent pillars 206 b and the first transparent pillars 206 a is greater than its bottom surface area, the top surface area of each of the first transparent pillars 206 a is not equal to the bottom surface area of each of the second transparent pillars 206 b .
- the top surface area of each of the first transparent pillars 206 a is larger than the bottom surface area of each of the second transparent pillars 206 b .
- the overlay alignment while forming the second transparent pillars 206 b may be improved, preventing the overlay area of the second transparent pillars 206 b and the first transparent pillars 206 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised.
- the angle ⁇ 2 between the sidewalls and the bottom surfaces of each of the second transparent pillars 206 b and each of the first transparent pillars 206 a is between 91° and 150°.
- the collimating effect may be reduced due to misalignment of the second transparent pillars 206 b and the first transparent pillars 206 a . If the angle ⁇ 2 is too great, the overlay area of the second transparent pillars 206 b and the first transparent pillars 206 a may be too small and the amount of light absorbed by the pixels 104 underneath are reduced.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- the top surface area of each of the transparent pillars in each layer is larger than its bottom surface area, the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer.
- the collimating effect may be improved further and the yield may be raised.
- FIG. 7 is a cross-sectional representation of an optical sensor 300 in accordance with some further embodiments.
- Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein.
- the difference from the embodiments described above is that, as shown in FIG. 7 in accordance with some embodiments, the first transparent pillars 306 a and the second transparent pillars 306 b are rectangles with different sizes in a cross-sectional view, and the first transparent pillars 306 a is smaller than the second transparent pillars 306 b in a cross-sectional view.
- the first transparent pillars 306 a and the second transparent pillars 306 b may be formed by different patterned mask, and the first transparent pillars 306 a and the second transparent pillars 306 b with different sizes are formed.
- the top surface area of each of the first transparent pillars 306 a is not equal to the bottom surface area of each of the second transparent pillars 306 b .
- the top surface area of each of the first transparent pillars 306 a is smaller than the bottom surface area of each of the second transparent pillars 306 b .
- the overlay alignment while forming the second transparent pillars 306 b may be improved, preventing the overlay area of the second transparent pillars 306 b and the first transparent pillars 306 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised.
- the ratio between the diameter 306 b W of the second transparent pillars 306 b and the diameter 306 a W of the first transparent pillars 306 a is between 1 and 10.
- the second transparent pillars 306 b and the first transparent pillars 306 a may be misaligned and the collimating effect may be reduced. If the ratio between the diameter 306 b W of the second transparent pillars 306 b and the diameter 306 a W of the first transparent pillars 306 a is too great, the overlay area of the second transparent pillars 306 b and the first transparent pillars 306 a may be too small and the amount of light absorbed by the pixels 104 underneath may be reduced.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- the top surface area of the lower transparent pillars is not equal to the bottom surface area of the upper transparent pillars. It may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised.
- FIG. 8 is a cross-sectional representation of an optical sensor 400 in accordance with some further embodiments.
- Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein.
- the difference from the embodiments described above is that, as shown in FIG. 8 in accordance with some embodiments, the first transparent pillars 406 a and the second transparent pillars 406 b are rectangles with different sizes in a cross-sectional view, and the first transparent pillars 406 a is larger than the second transparent pillars 406 b in a cross-sectional view.
- the first transparent pillars 406 a and the second transparent pillars 406 b may be formed by different patterned mask, and the first transparent pillars 406 a and the second transparent pillars 406 b with different sizes are formed.
- the top surface area of each of the first transparent pillars 406 a is not equal to the bottom surface area of each of the second transparent pillars 406 b .
- the top surface area of each of the first transparent pillars 406 a is larger than the bottom surface area of each of the second transparent pillars 406 b .
- the overlay alignment while forming the second transparent pillars 406 b may be improved, preventing the overlay area of the second transparent pillars 406 b and the first transparent pillars 406 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised.
- the ratio between the diameter 406 b W of the second transparent pillars 406 b and the diameter 406 a W of the first transparent pillars 406 a is between 0.1 and 0.99.
- the second transparent pillars 406 b and the first transparent pillars 406 a may be misaligned and the collimating effect may be reduced. If the ratio between the diameter 406 b W of the second transparent pillars 406 b and the diameter 406 a W of the first transparent pillars 406 a is too less, the overlay area of the second transparent pillars 406 b and the first transparent pillars 406 a may be too small and the amount of light absorbed by the pixels 104 underneath are reduced.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- the top surface area of the lower transparent pillars is not equal to the bottom surface area of the upper transparent pillars. It may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised.
- FIG. 9 is a cross-sectional representation of an optical sensor 500 in accordance with some further embodiments.
- Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein.
- the difference from the embodiments described above is that, as shown in FIG. 9 in accordance with some embodiments, the first transparent pillars 506 a and the second transparent pillars 506 b have different shapes in a cross-sectional view.
- the first transparent pillars 506 a are double concave shapes
- the second transparent pillars 506 b are trapezoids.
- the cross-sectional shapes of the first transparent pillars 506 a and the second transparent pillars 506 b may be changed by modifying the exposure focal length in the patterning process.
- the bottom surface area of each of the transparent pillars 506 a and the second transparent pillars 506 b is larger than its top surface area, making it easier to form the light-shielding layer between the transparent pillars, preventing voids being formed between the transparent pillars and the light-shielding layer, and the collimating effect may be reduced.
- each of the first transparent pillars 506 a is not equal to the bottom surface area of each of the second transparent pillars 506 b , the overlay alignment while forming the second transparent pillars 506 b may be improved, preventing the overlay area of the second transparent pillars 506 b and the first transparent pillars 506 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised.
- the shapes, sizes, and the ratio of the first transparent pillars and the second transparent pillars in FIG. 9 is merely an example, and the present disclosure is not limited thereto.
- the light collimating layer may also include a combination of transparent pillars of any shape, size, and ratio, depending on the demand of the process and the design.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- the void formed between the transparent pillars and the light-shielding layer may be prevented.
- FIG. 10 is a cross-sectional representation of an optical sensor 600 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown in FIG. 10 in accordance with some embodiments, the optical sensor 600 further includes a bottom light-shielding layer 612 .
- the bottom light-shielding layer 612 is disposed between the pixels 104 over the substrate 102 , and the bottom light-shielding layer 612 is disposed beneath the first light collimating layer 110 a .
- the material of the bottom light-shielding layer 612 is different from that of the subsequently formed first light-shielding layer 108 a and second light-shielding layer 108 b .
- the bottom light-shielding layer 612 may include a light-curing material which has an absorptivity greater than 90% to a light with a wavelength in a range from 300 nm to 1100 nm.
- the light-curing material may include a non-transparent photosensitive resin, a black light-shielding resin, other suitable materials, or a combination thereof.
- the light-curing material may be disposed over substrate 102 and then a curing process such as a light-curing process may be performed to cure the light-curing material, and the bottom light-shielding layer 612 is formed over the substrate 102 between the pixels 104 .
- the bottom light-shielding layer 612 disposed between the pixels 104 on the substrate 102 may prevent the light from entering the region without pixels 104 of the substrate 102 and generating noise of optical signal.
- the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars.
- the noise of optical signal may be reduced.
- FIG. 11 is a cross-sectional representation of an optical sensor 700 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown in FIG. 11 in accordance with some embodiments, the first light collimating layer 110 a further includes first dummy transparent pillars 706 a D through the first light-shielding layer 108 a and disposed in the first light collimating layer 110 a on the peripheral region of the substrate 102 .
- the second light collimating layer 110 b further includes second dummy transparent pillars 706 b D through the second light-shielding layer 108 b correspondingly disposed on the first dummy transparent pillars 706 a D.
- the first dummy transparent pillars 706 a D do not correspond to any pixel 104 beneath.
- the first dummy transparent pillars 706 a D and the second dummy transparent pillars 706 b D are formed on the peripheral region of the substrate 102 while forming the first transparent pillars 106 a and the second transparent pillars 106 b respectively. Moreover, they are made of the same material of each of the first transparent pillars 106 a and each of the second transparent pillars 106 b . In this way, the production time and cost may be saved.
- the pixels 104 are arranged in an array. Therefore, the transparent pillars 106 may also be arranged in an array.
- the transparent pillars 106 at the edge of the array may collapse or deform due to the cohesion force between the transparent material molecules.
- the transparent pillars 106 array structure may be strengthened, avoiding the transparent pillars 106 at the edge of the array deform or collapse. The uniformity of the transparent pillars 106 may remain and the yield may be raised.
- the shapes and sizes of the dummy transparent pillars and the transparent pillars in FIG. 11 are merely an example, and the present disclosure is not limited thereto.
- the dummy transparent pillars may also be any number, arrangement, shape, size, and ratio, depending on the demand of the process and the design.
- the total aspect ratio of the transparent pillars may be raised.
- the transparent pillars structure may be further enhanced, avoiding deformation and collapse of too high transparent pillars.
- the present disclosure provides an optical sensor.
- the total aspect ratio of the transparent pillars may be raised.
- voids are prevented to be formed between the light-shielding layer and the transparent pillars.
- the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer.
- the noise of the optical signals may be reduced.
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Abstract
Description
- The disclosure relates to an optical device, and more particularly to an optical sensor and a method for forming the same.
- Optical devices in an optical sensor may include a light collimator, a beam splitter, a focusing lens, and a linear sensor. The function of the light collimator is to collimate light to reduce power consumption caused by light divergence. For example, the light collimator may be applied in optical sensors to increase the efficiency of fingerprint sensor devices.
- The light collimator includes transparent pillars and a light-shielding layer surrounding the transparent pillars in order to collimate light. When the transparent pillars are required to have a high aspect ratio due to design demands, the process capability limitation may easily cause the deformation and collapse of the transparent pillars. The collimating result may be affected and further affecting the yield of the optical sensors.
- Although existing optical sensors have generally been adequate for their intended purposes, they have not been entirely satisfactory in all respects and need to be improved. The aspect ratio of the light collimator of the optical sensors in particular needs to be increased.
- The present disclosure provides an optical sensor. The optical sensor includes pixels disposed in a substrate and a light collimating layer disposed on the substrate. The light collimating layer includes a first light-shielding layer, first transparent pillars, a second light-shielding layer, and second transparent pillars. The first light-shielding layer is disposed on the substrate. The first transparent pillars through the first light-shielding layer are correspondingly disposed on the pixels. The second light-shielding layer is disposed on the first light-shielding layer and the first transparent pillars. The second transparent pillars through the second light-shielding layer are correspondingly disposed on the first transparent pillars. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.
- The present disclosure also provides a method for forming an optical sensor. The method for forming an optical sensor includes forming a plurality of pixels in a substrate. The method for forming an optical sensor further includes forming a light collimating layer on the substrate. Forming of the light collimating layer includes forming a plurality of first transparent pillars on the substrate. The first transparent pillars are correspondingly disposed on the pixels. Forming of the light collimating layer further includes forming a first light-shielding layer between the first transparent pillars. Forming of the light collimating layer further includes planarizing a top surface of the first transparent pillars and the first light-shielding layer. Forming of the light collimating layer further includes forming a plurality of second transparent pillars on the first transparent pillars and the first light-shielding layer. The second transparent pillars are correspondingly disposed on the first transparent pillars. Forming of the light collimating layer further includes forming a second light-shielding layer between the second transparent pillars. Forming of the light collimating layer further includes planarizing a top surface of the second transparent pillars and the second light-shielding layer. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIGS. 1-5 are cross-sectional representations of various stages of forming an optical sensor in accordance with some embodiments. -
FIG. 6 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. -
FIG. 7 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. -
FIG. 8 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. -
FIG. 9 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. -
FIG. 10 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. -
FIG. 11 is a cross-sectional representation of an optical sensor in accordance with some other embodiments. - The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Furthermore, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to other elements or features as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- Herein, the terms “around,” “about,” “substantial” usually mean within 20% of a given value or range, preferably within 10%, and better within 5%, or 3%, or 2%, or 1%, or 0.5%. It should be noted that the quantity herein is a substantial quantity, which means that the meaning of “around,” “about,” “substantial” are still implied even without specific mention of the terms “around,” “about,” “substantial.”
- Although some embodiments are discussed with operations performed in a particular order, these operations may be performed in another logical order. In different embodiments, additional operations can be provided before, during, and/or after the stages described the present disclosure. Some of the stages that are described can be replaced or eliminated for different embodiments. Additional features can be added to the optical sensor in the present disclosure. Some of the features described below can be replaced or eliminated for different embodiments.
- The embodiments of the present disclosure provide an optical sensor. By stacking transparent pillars and light-shielding layers layer by layer, the light collimating layer is formed in a layered manner. The process capability limitation may be prevented, and the total aspect ratio of the transparent pillars may be raised. By changing the shape and the size of the transparent pillars in the cross-sectional view, the misalignment issue between multi-layer transparent pillars may be improved, and the production yield may be raised.
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FIGS. 1 to 5 are cross-sectional representations of various stages of forming theoptical sensor 100 in accordance with some embodiments of the present disclosure. As shown inFIG. 1 , asubstrate 102 is provided. Thesubstrate 102 may be a semiconductor substrate, such as a silicon substrate. In addition, the semiconductor substrate may be elemental semiconductors including germanium; compound semiconductors including gallium nitride, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; alloy semiconductors including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP, or a combination thereof. In some embodiments, thesubstrate 102 may also be a semiconductor on insulator (SOI) substrate. The above SOI substrate may include a base plate, a buried oxide (BOX) layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide (BOX) layer. In addition, the conductivity type of thesubstrate 102 may be N-type or P-type. - In some embodiments, the
substrate 102 may include various isolation features (not shown) to define active regions and electrically isolate devices in the active regions in or on thesubstrate 102. In some embodiments, the isolation features include shallow trench isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or combinations thereof. In some embodiments, forming the isolation features may include forming an insulating layer on thesubstrate 102, selectively etching the insulating layer and thesubstrate 102 to form trenches in thesubstrate 102, growing a nitrogen-rich (e.g., silicon oxynitride) liner layer in the trenches, filling insulating materials (e.g., silicon dioxide, silicon nitride, or silicon oxynitride) in the trenches by a deposition process, performing an annealing process on the insulating materials in the trenches, and performing a planarization process such as a chemical mechanical polishing (CMP) process on thesubstrate 102 to remove excess insulating materials such that the insulating materials in the trenches are level with the top surface of thesubstrate 102. - In some embodiments, the
substrate 102 may include various P-type doped regions and/or N-type doped regions formed by an ion implantation and/or a diffusion process (not shown). In some embodiments, the doped regions may be formed into devices such as transistors, photodiodes, etc. However, these devices are merely examples, and the present disclosure is not limited thereto. - In some embodiments, the
substrate 102 may include various conductive features, such as conductive lines or vias (not shown). For example, the conductive features may be formed by aluminum, copper, tungsten, other suitable conductive materials, an alloy thereof, or a combination thereof. - As shown in
FIG. 1 in accordance with some embodiments, thesubstrate 102 may includepixels 104. Thepixels 104 may include a photodetector and a readout circuit. The photodetector may include a photodiode, a charged coupling device (CCD) sensor, a complimentary metal-oxide-semiconductor (CMOS) image sensor, an active sensor, a passive sensor, other suitable sensors, or a combination thereof. The readout circuit may include a transfer transistor, a reset transistor, a source-follower transistor, a select transistor, one or more other suitable transistors, or a combination thereof. Thepixels 104 may transform the received optical signals from the photodetector into electronic signals, and process the electronic signals by the readout circuit. In such cases, apixel 104 may correspond to at least one photodetector, such as at least one photodiode. It should be noted that only a part of thepixels 104 are shown inFIG. 1 , and the real number of thepixels 104 of the present disclosure are not limited thereto. In some embodiments, thepixels 104 are arranged in thesubstrate 102 in an array. - Next, as shown in
FIG. 2 , firsttransparent pillars 106 a are formed on thesubstrate 102. In some embodiments, a transparent layer may be blanketly formed on thesubstrate 102 first. In some embodiments, the transparent layer may include a transparent material, which has a transmittance greater than 60% to a light with a wavelength in a range from 300 nm to 1100 nm. The transparent material may include a light-curable material, a thermosetting material, or a combination thereof. In some embodiments, the transparent material may include polymethyl methacrylate (PMMA), perfluorocyclobutyl (PFCB) polymer, polyimide (PI), epoxy resins, other suitable materials, or a combination thereof. In some embodiments, the transparent material may be deposited on thesubstrate 102 by a process such as spin-coating, chemical vapor deposition (CVD), physical vapor deposition (PVD) (e.g. evaporation or sputtering), electroplating, atomic layer deposition (ALD), other suitable processes, or a combination thereof - Next, the transparent material of the
substrate 102 is selectively removed. In some embodiments, the transparent material is selectively removed by a photolighography process and an etching process to form the firsttransparent pillars 106 a corresponding to thepixels 104. In some embodiments, the photolighography process may include photoresist coating (e.g., spin-coating), soft baking, mask alignment, pattern exposure, post-exposure baking, photoresist developing, rinsing and drying (e.g., hard baking), other suitable processes, or a combination thereof. The etching process may include a dry etching process (e.g., reactive ion etch (RIE), plasma etching, or ion milling), a wet etching process, or a combination thereof. In some other embodiments, the firsttransparent pillars 106 a may be formed directly by a curing process such as a light-curing process to cure the transparent materials and the unexposed portion is rinsed. The cross-sectional shape of the firsttransparent pillars 106 a may be changed by tuning the exposure focal length in the patterning process. For example, as shown inFIG. 2 , the firsttransparent pillars 106 a in the cross-sectional views are upwardly tapered trapezoids. In some other embodiments, the firsttransparent pillars 106 a may have some other shapes in the cross-sectional views, such as downwardly tapered trapezoids, rectangles, double concave shapes, other suitable shapes, or a combination thereof. - Next, as shown in
FIG. 3 , a first light-shielding layer 108 a is formed between the firsttransparent pillars 106 a on thesubstrate 102. In some embodiments, the first light-shielding layer 108 a may include a light-shielding material which has absorptivity greater than 90% to a light with a wavelength in a range from 300 nm to 1100 nm. The light-shielding material may include a light-curable material, a thermosetting material, or a combination thereof. In some embodiments, the light-shielding material includes non-transparent photoresist, oil ink, molding compound, solder mask, other suitable materials, or a combination thereof. In some embodiments, the light-shielding material may be disposed between the firsttransparent pillars 106 a on thesubstrate 102, and a curing process such as a UV-curing process, a thermosetting process, or a combination thereof may be performed to cure the light-shielding material to form the first light-shielding layer 108 a. In some embodiments, a single light-shielding material is used to form the first light-shielding layer 108 a. In this way, the process may be simplified, and the production time and cost may be reduced. - Next, a planarization process such as a chemical mechanical polishing (CMP) process may be performed on the first
transparent pillars 106 a and the first light-shielding layer 108 a to remove the excess light-shielding materials so that the top surfaces of the firsttransparent pillars 106 a and the first light-shielding layer 108 a are coplanar. Therefore, the firstlight collimating layer 110 a including the firsttransparent pillars 106 a and the first light-shielding layer 108 a is formed. - Next, as shown in
FIG. 4 , secondtransparent pillars 106 b are formed on the firsttransparent pillars 106 a and the first light-shielding layer 108 a, and the secondtransparent pillars 106 b are correspondingly disposed on the firsttransparent pillars 106 a. In some embodiments, the processes for forming the secondtransparent pillars 106 b are the same as, or similar to, those used to form the firsttransparent pillars 106 a. For the purpose of brevity, the descriptions of these processes are not repeated herein. In some other embodiments, the materials of the secondtransparent pillars 106 b and the firsttransparent pillars 106 a are different, depending on the demands of the process. - In some embodiments, the second
transparent pillars 106 b and the firsttransparent pillars 106 a have the same shape and size in a cross-sectional view. For example, as shown inFIG. 4 , the secondtransparent pillars 106 b and the firsttransparent pillars 106 a are both upwardly tapered trapezoids with the same size in the cross-sectional view. In this way, it is easier to form the light-shielding layer between the transparent pillars, preventing forming voids between the transparent pillars and the light-shielding layer and reducing the collimating effect. In addition, since the bottom surface area of each of the secondtransparent pillars 106 b and each of the firsttransparent pillars 106 a is greater than its top surface area, the top surface area of each of the firsttransparent pillars 106 a is not equal to the bottom surface area of each of the secondtransparent pillars 106 b. For example, the top surface area of each of the firsttransparent pillars 106 a is smaller than the bottom surface area of each of the secondtransparent pillars 106 b. In this way, the overlay alignment while forming the secondtransparent pillars 106 b may be improved, preventing the overlay area of the secondtransparent pillars 106 b and the firsttransparent pillars 106 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised. In some embodiments, the angle θ1 between the sidewalls and the bottom surfaces of each of the secondtransparent pillars 106 b and each of the firsttransparent pillars 106 a is between 30° and 89°. If the angle θ1 is too great, the collimating effect may be reduced due to misalignment of the secondtransparent pillars 106 b and the firsttransparent pillars 106 a. If the angle θ1 is too less, the overlay area of the secondtransparent pillars 106 b and the firsttransparent pillars 106 a may be too small and the amount of light absorbed by thepixels 104 underneath are reduced. - Next, as shown in
FIG. 5 , a second light-shielding layer 108 b is formed between the secondtransparent pillars 106 b on the firstlight collimating layer 110 a. In some embodiments, the processes for forming the second light-shielding layer 108 b are the same as, or similar to, those used to form the first light-shielding layer 108 a. For the purpose of brevity, the descriptions of these processes are not repeated herein. In some other embodiments, the materials of the second light-shielding layer 108 b and the first light-shielding layer 108 a are different, depending on the demands of the process. InFIG. 5 , since the second light-shielding layer 108 b and the first light-shielding layer 108 a are made of a single light-shielding material, and the secondtransparent pillars 106 b and the firsttransparent pillars 106 a are also made of a single transparent material, there is no obvious interface between them and the interface are shown by a dash line. - Next, a planarization process such as a chemical mechanical polishing (CMP) process may be performed on the second
transparent pillars 106 b and the second light-shielding layer 108 b to remove the excess light-shielding materials so that the top surfaces of the secondtransparent pillars 106 b and the second light-shielding layer 108 b are coplanar. Therefore, the secondlight collimating layer 110 b including the secondtransparent pillars 106 b and the second light-shielding layer 108 b is formed. - As shown in
FIG. 5 , thelight collimating layer 110 of theoptical sensor 100 includes the firstlight collimating layer 110 a and the secondlight collimating layer 110 b. Thetransparent pillars 106 include the firsttransparent pillars 106 a and the secondtransparent pillars 106 b, and the light-shielding layer 108 includes the first light-shielding layer 108 a and the second light-shielding layer 108 b. By forming the firstlight collimating layer 110 a and the secondlight collimating layer 110 b respectively, the aspect ratio of thetransparent pillars 106 may be raised, and thetransparent pillars 106 may not be deformed and collapse due to too hightransparent pillars 106 in a single process. In some embodiments, the aspect ratio (i.e., the total aspect ratio of the firsttransparent pillars 106 a and the secondtransparent pillars 106 b) of thetransparent pillars 106 is in a range of between 1:1 and 10:1. - In some embodiments, there may be some other optical devices on the
light collimating layer 110, such as color filters, glass, microlenses, or transparent layers (not shown). The incident light passes through the optical devices above thelight collimating layer 110 and through thetransparent pillars 106 to illuminate thepixels 104. In some embodiments, the secondtransparent pillars 106 b and the firsttransparent pillars 106 a are disposed directly above thepixels 104. As a result, the amount of the light illuminating thepixels 104 may be increased. - It should be noted that, the number of layers of the light collimating layer in
FIG. 5 is merely an example, and the present disclosure is not limited thereto. In the present disclosure, the light collimating layer may also include at least three layers of light collimating layers, depending on the demand of process and design. - As mentioned above, by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, by modifying the shape and the size of the transparent pillars in each layer in a cross-sectional view, such as making the bottom surface area of each of the transparent pillars in each layer larger than its top surface area, a void may be prevented to be formed between the transparent pillars and the light-shielding layer. Furthermore, by making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised.
-
FIG. 6 is a cross-sectional representation of anoptical sensor 200 in accordance with some other embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 6 in accordance with some embodiments, the firsttransparent pillars 206 a and the secondtransparent pillars 206 b are downwardly tapered trapezoids. In some embodiments, the shapes of the firsttransparent pillars 206 a and the secondtransparent pillars 206 b in the cross-sectional view may be changed by modifying the exposure focal length of the patterning process. The process alignment capability may be enhanced by forming the light-shielding 208 a and 208 b between the downwardly tapered trapezoidlayers 206 a and 206 b.transparent pillars - In some embodiments, the second
transparent pillars 206 b and the firsttransparent pillars 206 a have the same shape and size in a cross-sectional view. For example, as shown inFIG. 6 , the secondtransparent pillars 206 b and the firsttransparent pillars 206 a are both downwardly tapered trapezoids with the same size in the cross-sectional view. In addition, since the top surface area of each of the secondtransparent pillars 206 b and the firsttransparent pillars 206 a is greater than its bottom surface area, the top surface area of each of the firsttransparent pillars 206 a is not equal to the bottom surface area of each of the secondtransparent pillars 206 b. For example, the top surface area of each of the firsttransparent pillars 206 a is larger than the bottom surface area of each of the secondtransparent pillars 206 b. In this way, the overlay alignment while forming the secondtransparent pillars 206 b may be improved, preventing the overlay area of the secondtransparent pillars 206 b and the firsttransparent pillars 206 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised. In some embodiments, the angle θ2 between the sidewalls and the bottom surfaces of each of the secondtransparent pillars 206 b and each of the firsttransparent pillars 206 a is between 91° and 150°. If the angle θ2 is too less, the collimating effect may be reduced due to misalignment of the secondtransparent pillars 206 b and the firsttransparent pillars 206 a. If the angle θ2 is too great, the overlay area of the secondtransparent pillars 206 b and the firsttransparent pillars 206 a may be too small and the amount of light absorbed by thepixels 104 underneath are reduced. - As shown in the embodiments in
FIG. 6 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, since the top surface area of each of the transparent pillars in each layer is larger than its bottom surface area, the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. -
FIG. 7 is a cross-sectional representation of anoptical sensor 300 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 7 in accordance with some embodiments, the firsttransparent pillars 306 a and the secondtransparent pillars 306 b are rectangles with different sizes in a cross-sectional view, and the firsttransparent pillars 306 a is smaller than the secondtransparent pillars 306 b in a cross-sectional view. In some embodiments, the firsttransparent pillars 306 a and the secondtransparent pillars 306 b may be formed by different patterned mask, and the firsttransparent pillars 306 a and the secondtransparent pillars 306 b with different sizes are formed. - Since the second
transparent pillars 306 b has adiameter 306 bW larger than thediameter 306 aW of the firsttransparent pillars 306 a, the top surface area of each of the firsttransparent pillars 306 a is not equal to the bottom surface area of each of the secondtransparent pillars 306 b. For example, the top surface area of each of the firsttransparent pillars 306 a is smaller than the bottom surface area of each of the secondtransparent pillars 306 b. In this way, the overlay alignment while forming the secondtransparent pillars 306 b may be improved, preventing the overlay area of the secondtransparent pillars 306 b and the firsttransparent pillars 306 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised. In some embodiments, the ratio between thediameter 306 bW of the secondtransparent pillars 306 b and thediameter 306 aW of the firsttransparent pillars 306 a is between 1 and 10. If the ratio between thediameter 306 bW of the secondtransparent pillars 306 b and thediameter 306 aW of the firsttransparent pillars 306 a is too less, the secondtransparent pillars 306 b and the firsttransparent pillars 306 a may be misaligned and the collimating effect may be reduced. If the ratio between thediameter 306 bW of the secondtransparent pillars 306 b and thediameter 306 aW of the firsttransparent pillars 306 a is too great, the overlay area of the secondtransparent pillars 306 b and the firsttransparent pillars 306 a may be too small and the amount of light absorbed by thepixels 104 underneath may be reduced. - As shown in the embodiments in
FIG. 7 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, since the diameter of the upper transparent pillars is larger than the diameter of the lower transparent pillars, the top surface area of the lower transparent pillars is not equal to the bottom surface area of the upper transparent pillars. It may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. -
FIG. 8 is a cross-sectional representation of anoptical sensor 400 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 8 in accordance with some embodiments, the firsttransparent pillars 406 a and the secondtransparent pillars 406 b are rectangles with different sizes in a cross-sectional view, and the firsttransparent pillars 406 a is larger than the secondtransparent pillars 406 b in a cross-sectional view. In some embodiments, the firsttransparent pillars 406 a and the secondtransparent pillars 406 b may be formed by different patterned mask, and the firsttransparent pillars 406 a and the secondtransparent pillars 406 b with different sizes are formed. - Since the first
transparent pillars 406 a has adiameter 406 aW larger than thediameter 406 bW of the secondtransparent pillars 406 a, the top surface area of each of the firsttransparent pillars 406 a is not equal to the bottom surface area of each of the secondtransparent pillars 406 b. For example, the top surface area of each of the firsttransparent pillars 406 a is larger than the bottom surface area of each of the secondtransparent pillars 406 b. In this way, the overlay alignment while forming the secondtransparent pillars 406 b may be improved, preventing the overlay area of the secondtransparent pillars 406 b and the firsttransparent pillars 406 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised. In some embodiments, the ratio between thediameter 406 bW of the secondtransparent pillars 406 b and thediameter 406 aW of the firsttransparent pillars 406 a is between 0.1 and 0.99. If the ratio between thediameter 406 bW of the secondtransparent pillars 406 b and thediameter 406 aW of the firsttransparent pillars 406 a is too great, the secondtransparent pillars 406 b and the firsttransparent pillars 406 a may be misaligned and the collimating effect may be reduced. If the ratio between thediameter 406 bW of the secondtransparent pillars 406 b and thediameter 406 aW of the firsttransparent pillars 406 a is too less, the overlay area of the secondtransparent pillars 406 b and the firsttransparent pillars 406 a may be too small and the amount of light absorbed by thepixels 104 underneath are reduced. - As shown in the embodiments in
FIG. 8 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, since the diameter of the upper transparent pillars is smaller than the diameter of the lower transparent pillars, the top surface area of the lower transparent pillars is not equal to the bottom surface area of the upper transparent pillars. It may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. -
FIG. 9 is a cross-sectional representation of anoptical sensor 500 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 9 in accordance with some embodiments, the firsttransparent pillars 506 a and the secondtransparent pillars 506 b have different shapes in a cross-sectional view. For example, the firsttransparent pillars 506 a are double concave shapes, and the secondtransparent pillars 506 b are trapezoids. In some embodiments, the cross-sectional shapes of the firsttransparent pillars 506 a and the secondtransparent pillars 506 b may be changed by modifying the exposure focal length in the patterning process. - By freely modifying the shapes and sizes of the
transparent pillars 506 a and the secondtransparent pillars 506 b in the cross-sectional view, the bottom surface area of each of thetransparent pillars 506 a and the secondtransparent pillars 506 b is larger than its top surface area, making it easier to form the light-shielding layer between the transparent pillars, preventing voids being formed between the transparent pillars and the light-shielding layer, and the collimating effect may be reduced. In addition, the top surface area of each of the firsttransparent pillars 506 a is not equal to the bottom surface area of each of the secondtransparent pillars 506 b, the overlay alignment while forming the secondtransparent pillars 506 b may be improved, preventing the overlay area of the secondtransparent pillars 506 b and the firsttransparent pillars 506 a from being reduced due to misalignment, and the collimating effect may be improved and the yield may be raised. - It should be noted that, the shapes, sizes, and the ratio of the first transparent pillars and the second transparent pillars in
FIG. 9 is merely an example, and the present disclosure is not limited thereto. In the present disclosure, the light collimating layer may also include a combination of transparent pillars of any shape, size, and ratio, depending on the demand of the process and the design. - As shown in the embodiments in
FIG. 9 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, by freely modifying the shapes, sizes, and the ratio of the transparent pillars of each layer, for example, making the bottom surface area of the transparent pillars in each layer larger than its top surface area, the void formed between the transparent pillars and the light-shielding layer may be prevented. By making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. -
FIG. 10 is a cross-sectional representation of anoptical sensor 600 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 10 in accordance with some embodiments, theoptical sensor 600 further includes a bottom light-shielding layer 612. The bottom light-shielding layer 612 is disposed between thepixels 104 over thesubstrate 102, and the bottom light-shielding layer 612 is disposed beneath the firstlight collimating layer 110 a. In some embodiments, the material of the bottom light-shielding layer 612 is different from that of the subsequently formed first light-shielding layer 108 a and second light-shielding layer 108 b. In some embodiments, the bottom light-shielding layer 612 may include a light-curing material which has an absorptivity greater than 90% to a light with a wavelength in a range from 300 nm to 1100 nm. In some embodiments, the light-curing material may include a non-transparent photosensitive resin, a black light-shielding resin, other suitable materials, or a combination thereof. In some embodiments, the light-curing material may be disposed oversubstrate 102 and then a curing process such as a light-curing process may be performed to cure the light-curing material, and the bottom light-shielding layer 612 is formed over thesubstrate 102 between thepixels 104. - In some embodiments, the bottom light-
shielding layer 612 disposed between thepixels 104 on thesubstrate 102 may prevent the light from entering the region withoutpixels 104 of thesubstrate 102 and generating noise of optical signal. - As shown in the embodiments in
FIG. 10 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised, preventing deformation and collapse of too high transparent pillars. Moreover, by forming a bottom light-shielding layer between the pixels on the substrate, the noise of optical signal may be reduced. By making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. -
FIG. 11 is a cross-sectional representation of anoptical sensor 700 in accordance with some further embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions, the reference numerals, and/or letters may be repeated herein. The difference from the embodiments described above is that, as shown inFIG. 11 in accordance with some embodiments, the firstlight collimating layer 110 a further includes first dummy transparent pillars 706 aD through the first light-shielding layer 108 a and disposed in the firstlight collimating layer 110 a on the peripheral region of thesubstrate 102. The secondlight collimating layer 110 b further includes second dummy transparent pillars 706 bD through the second light-shielding layer 108 b correspondingly disposed on the first dummy transparent pillars 706 aD. In some embodiments as shown inFIG. 11 , the first dummy transparent pillars 706 aD do not correspond to anypixel 104 beneath. - In some embodiments, the first dummy transparent pillars 706 aD and the second dummy transparent pillars 706 bD are formed on the peripheral region of the
substrate 102 while forming the firsttransparent pillars 106 a and the secondtransparent pillars 106 b respectively. Moreover, they are made of the same material of each of the firsttransparent pillars 106 a and each of the secondtransparent pillars 106 b. In this way, the production time and cost may be saved. - In some embodiments, the
pixels 104 are arranged in an array. Therefore, thetransparent pillars 106 may also be arranged in an array. Thetransparent pillars 106 at the edge of the array may collapse or deform due to the cohesion force between the transparent material molecules. By forming dummytransparent pillars 706D (including the first dummy transparent pillars 706 aD and the second dummy transparent pillars 706 bD) at the edge of thetransparent pillars 106 array as a stress buffer providing physical support, thetransparent pillars 106 array structure may be strengthened, avoiding thetransparent pillars 106 at the edge of the array deform or collapse. The uniformity of thetransparent pillars 106 may remain and the yield may be raised. - It should be noted that the shapes and sizes of the dummy transparent pillars and the transparent pillars in
FIG. 11 are merely an example, and the present disclosure is not limited thereto. In the present disclosure, the dummy transparent pillars may also be any number, arrangement, shape, size, and ratio, depending on the demand of the process and the design. - As shown in the embodiments in
FIG. 11 , by forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised. Moreover, by disposing dummy transparent pillars around the transparent pillars, the transparent pillars structure may be further enhanced, avoiding deformation and collapse of too high transparent pillars. By making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. The collimating effect may be improved further and the yield may be raised. - As mentioned above, the present disclosure provides an optical sensor. By forming the light collimating layer of an optical sensor by layers, the total aspect ratio of the transparent pillars may be raised. By freely modifying the shape, size, and ratio of the transparent pillars in each layer, voids are prevented to be formed between the light-shielding layer and the transparent pillars. By making the top surface area of the lower transparent pillars not equal to the bottom surface area of the upper transparent pillars, it may prevent the overlay area from being reduced due to misalignment of transparent pillars of each layer. Moreover, by forming the light-shielding layer on the substrate between the pixels, the noise of the optical signals may be reduced. By disposing dummy transparent pillars around the transparent pillars, the transparent array structure may be enhanced, preventing the transparent pillars from being too tall to deform and collapse, and the collimating effect may be improved further and the yield may be raised.
- It should be noted that although the advantages and effects of some embodiments of the present disclosure have been described above, not all embodiments are required to achieve all of the advantages and benefits.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
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|---|---|---|---|---|
| US20220123036A1 (en) * | 2020-10-21 | 2022-04-21 | Samsung Display Co., Ltd. | Fingerprint sensor, method for manufacturing fingerprint sensor, and display device including fingerprint sensor |
| US20220123160A1 (en) * | 2020-05-21 | 2022-04-21 | Himax Technologies Limited | Method of fabricating a sensor device |
Family Cites Families (6)
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| KR100541028B1 (en) * | 2003-07-21 | 2006-01-11 | 주식회사 옵토메카 | Image sensor and its manufacturing method |
| US7119319B2 (en) * | 2004-04-08 | 2006-10-10 | Canon Kabushiki Kaisha | Solid-state image sensing element and its design support method, and image sensing device |
| JP5663918B2 (en) * | 2010-03-29 | 2015-02-04 | セイコーエプソン株式会社 | Optical sensor and spectroscopic sensor |
| US9373732B2 (en) * | 2012-02-07 | 2016-06-21 | Semiconductor Components Industries, Llc | Image sensors with reflective optical cavity pixels |
| US9991302B1 (en) * | 2016-11-17 | 2018-06-05 | Visera Technologies Company Limited | Optical sensor with color filters having inclined sidewalls |
| US10388689B2 (en) | 2017-02-13 | 2019-08-20 | Egis Technology Inc. | Fingerprint identification system, sensing method and manufacturing method |
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| US20220123160A1 (en) * | 2020-05-21 | 2022-04-21 | Himax Technologies Limited | Method of fabricating a sensor device |
| US12107178B2 (en) * | 2020-05-21 | 2024-10-01 | Himax Technologies Limited | Method of fabricating a sensor device |
| US20220123036A1 (en) * | 2020-10-21 | 2022-04-21 | Samsung Display Co., Ltd. | Fingerprint sensor, method for manufacturing fingerprint sensor, and display device including fingerprint sensor |
| CN114387630A (en) * | 2020-10-21 | 2022-04-22 | 三星显示有限公司 | Fingerprint sensor, method of manufacturing fingerprint sensor, and display device |
| US11855110B2 (en) * | 2020-10-21 | 2023-12-26 | Samsung Display Co., Ltd. | Fingerprint sensor, method for manufacturing fingerprint sensor, and display device including fingerprint sensor |
| US12211870B2 (en) * | 2020-10-21 | 2025-01-28 | Samsung Display Co., Ltd. | Fingerprint sensor, method for manufacturing fingerprint sensor, and display device including fingerprint sensor |
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