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US20200266283A1 - Process of making a short-circuited diode that prevents electrocution - Google Patents

Process of making a short-circuited diode that prevents electrocution Download PDF

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Publication number
US20200266283A1
US20200266283A1 US16/281,082 US201916281082A US2020266283A1 US 20200266283 A1 US20200266283 A1 US 20200266283A1 US 201916281082 A US201916281082 A US 201916281082A US 2020266283 A1 US2020266283 A1 US 2020266283A1
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US
United States
Prior art keywords
diode
silicon crystal
short
circuited
crystal diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US16/281,082
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US10756201B1 (en
Inventor
Jorge Luis Jimenez
John Jairo Pacheco Peña
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yakob Industries Inc
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Yakob Industries Inc
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Filing date
Publication date
Priority to US16/281,082 priority Critical patent/US10756201B1/en
Application filed by Yakob Industries Inc filed Critical Yakob Industries Inc
Priority to CN202080029429.7A priority patent/CN114072924A/en
Priority to EP20758633.0A priority patent/EP3928355A4/en
Priority to MX2021010047A priority patent/MX2021010047A/en
Priority to CA3131147A priority patent/CA3131147A1/en
Priority to PCT/US2020/018533 priority patent/WO2020172104A1/en
Assigned to YAKOB INDUSTRIES INC reassignment YAKOB INDUSTRIES INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JIMENEZ, JORGE LUIS, PACHECO PENA, JOHN JAIRO
Publication of US20200266283A1 publication Critical patent/US20200266283A1/en
Application granted granted Critical
Publication of US10756201B1 publication Critical patent/US10756201B1/en
Priority to CONC2021/0011856A priority patent/CO2021011856A2/en
Active legal-status Critical Current
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    • H01L29/6609—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Definitions

  • the present invention is a process of making a short-circuited diode that changes the properties of the electric current that passes through the diode so that the current will not harm a human that contacts the current after it passes through the diode.
  • the present invention was conceived via divine intervention, for the inventor was not killed while contacting a live wire that was passing 110 volts of alternating current.
  • one of the inventors of the present invention was checking a fault in one of the circuits of a radio. While checking the capacitor of the radio with a multimeter, he accidentally touched the terminals of the multimeter and felt a moderate electric shock. He did not pay much attention to the shock, for he believed that the capacitor was damaged. He continued checking the welds and/or false contacts of the radio and he carelessly shocked himself again. After the second incident, he noticed that the electric shock he received was a moderate one. He checked the voltage of the radio and realized that it was reading 110 volts. To his surprise he was not electrocuted and curiously he started touching other electronic parts of the radio that discharged electricity. Again, to his surprise he only felt moderate shocks while touching the circuits of the radio. After checking the circuits of the radio, he realized that the fault in the radio was a diode and he replaced the diode.
  • the inventor's son was to present a project in the school that was related to electricity.
  • the project was to build a Tesla coil and the inventor wanted to help his son with the project. His son was afraid to conduct the experiment for he was afraid of getting electrocuted. The inventor told his son not to be afraid to conduct the experiment, for he would ensure that he would not get shocked by the electricity passing through the system by installing his present invention in the system. His son did not trust him.
  • the inventor then spoke to the second inventor and they both realized that if they could re-produce diodes that were short circuited that they could save lives by preventing people from being electrocuted.
  • the inventors developed a process of making the present invention. The process created short-circuited diode that appears to change the electric properties of an electric current that passes through the short-circuited diode so that the current does not harm a person contacting the current.
  • the present invention describes a process of making a short-circuited diode that changes the properties of an electric current that passes through it so that the current does not harm a human that contacts the current after it passes through the short-circuited diode.
  • the short-circuited diode is made using a process comprising the steps of first providing a silicon crystal diode having two terminals, determining the silicon crystal diode's amperage rating, providing a heat gun or similar heating device, providing a multimeter, providing an electronic device that will provide a charge and connecting the multimeter to the terminals of the diode. Then heating the body of the diode with the heating device until the diode's impedance is below one ohm.
  • An object of the present invention is to provide a short-circuited diode that changes the properties of electricity that passes through it so that is does not electrocute a person contacting the current.
  • Another object of the present invention is to prevent a person from dying that contacts an electric device that has the short-circuited diode incorporated within the device.
  • the present invention is a short-circuited diode that changes the properties of an electric current that passes through it so that it does not electrocute a person contacting the current.
  • the short-circuited diode is prepared by a process comprising the steps of: providing a silicon crystal diode having two terminals; determining the silicon crystal diode's amperage rating; providing a heat gun or similar heating device; providing a multimeter; providing an electronic device that will provide a charge; connecting the multimeter to the terminals of the diode; heating the body of the diode with the heating device until the diode's impedance is below one ohm; upon the impedance being below one ohm, then discharging a plurality of low voltage charges, the charges being of an amperage that is approximately double the amperage rating of the silicon crystal diode, of the electronic device on to one of the terminals of the silicon crystal diode until the silicon crystal diode is short-circuited and the silicon crystal diode's
  • the silicon crystal diode is short circuited when current can pass in either direction through the diode.
  • the short-circuited diode somehow prevents a person contacting an electric current that passes through it from being electrocuted.
  • the inventors cannot determine or define how the electric current's properties change and believe that in time the phenomenon will be determined by the scientific community.
  • the inventors also believe that electro-medical devices that use electrical currents to treat infirmities will be developed or improved using the short-circuited diodes of the present invention.
  • An advantage of the present invention is that it provides a short-circuited diode that changes the properties of electricity (alternating current in the range from 110 to 220 volts) that passes through it so that it will not electrocute a person contacting the current.
  • Another advantage of the present invention is that it prevents a person from dying contacting an electric device that has the short-circuited diode incorporated within the device.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electronic Switches (AREA)
  • Electrotherapy Devices (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

A process of making a short-circuited diode that changes the properties of an electric current that passes through the short-circuited diode so that the current does not harm a human that contacts the current after it passes through the diode.

Description

    BACKGROUND
  • The present invention is a process of making a short-circuited diode that changes the properties of the electric current that passes through the diode so that the current will not harm a human that contacts the current after it passes through the diode.
  • The present invention was conceived via divine intervention, for the inventor was not killed while contacting a live wire that was passing 110 volts of alternating current.
  • In 2011, one of the inventors of the present invention was checking a fault in one of the circuits of a radio. While checking the capacitor of the radio with a multimeter, he accidentally touched the terminals of the multimeter and felt a moderate electric shock. He did not pay much attention to the shock, for he believed that the capacitor was damaged. He continued checking the welds and/or false contacts of the radio and he carelessly shocked himself again. After the second incident, he noticed that the electric shock he received was a moderate one. He checked the voltage of the radio and realized that it was reading 110 volts. To his surprise he was not electrocuted and curiously he started touching other electronic parts of the radio that discharged electricity. Again, to his surprise he only felt moderate shocks while touching the circuits of the radio. After checking the circuits of the radio, he realized that the fault in the radio was a diode and he replaced the diode.
  • The next day, his curiosity got the best of him and he again tested the connections to the diode with the same voltage. He again tested the diode with the multimeter and the diode shorted. He again touched the terminals and felt a moderate electric shock. He realized that the shorted diode somehow reduced the electric shock he should have received when he touched the live wire carrying the 110 volts of alternating current. His experience with the shorted diode led him to investigate what prevented him from getting electrocuted. He realized that the shorted diode did something to the electric properties of the current that passed through the diode so that current that passed through the diode would not electrocute a person contacting the current.
  • In 2018, the inventor's son was to present a project in the school that was related to electricity. The project was to build a Tesla coil and the inventor wanted to help his son with the project. His son was afraid to conduct the experiment for he was afraid of getting electrocuted. The inventor told his son not to be afraid to conduct the experiment, for he would ensure that he would not get shocked by the electricity passing through the system by installing his present invention in the system. His son did not trust him.
  • The inventor then spoke to the second inventor and they both realized that if they could re-produce diodes that were short circuited that they could save lives by preventing people from being electrocuted. After much trial and error, the inventors developed a process of making the present invention. The process created short-circuited diode that appears to change the electric properties of an electric current that passes through the short-circuited diode so that the current does not harm a person contacting the current.
  • For the foregoing reason there is a need for a process of making a short-circuited diode that will change the properties of an electrical current that passes through the diode so that a person contacting the current will not be electrocuted.
    • SUMMARY
  • The present invention describes a process of making a short-circuited diode that changes the properties of an electric current that passes through it so that the current does not harm a human that contacts the current after it passes through the short-circuited diode.
  • The short-circuited diode is made using a process comprising the steps of first providing a silicon crystal diode having two terminals, determining the silicon crystal diode's amperage rating, providing a heat gun or similar heating device, providing a multimeter, providing an electronic device that will provide a charge and connecting the multimeter to the terminals of the diode. Then heating the body of the diode with the heating device until the diode's impedance is below one ohm. Upon the impedance being below one ohm, then discharging a plurality of low voltage charges, the charges being of an amperage that is approximately double the amperage rating of the silicon crystal diode, of the electronic device on to one of the terminals of the silicon crystal diode until the silicon crystal diode is short-circuited and the silicon crystal diode's amperage is recalibrated to be below five ohms. And lastly, ensuring that the silicon crystal diode is short-circuited and that the silicon crystal diode's amperage is below five ohms after the silicon crystal diode cools by measuring the silicon crystal diode's properties with the multimeter.
  • An object of the present invention is to provide a short-circuited diode that changes the properties of electricity that passes through it so that is does not electrocute a person contacting the current.
  • Another object of the present invention is to prevent a person from dying that contacts an electric device that has the short-circuited diode incorporated within the device.
    • DESCRIPTION
  • The present invention is a short-circuited diode that changes the properties of an electric current that passes through it so that it does not electrocute a person contacting the current. The short-circuited diode is prepared by a process comprising the steps of: providing a silicon crystal diode having two terminals; determining the silicon crystal diode's amperage rating; providing a heat gun or similar heating device; providing a multimeter; providing an electronic device that will provide a charge; connecting the multimeter to the terminals of the diode; heating the body of the diode with the heating device until the diode's impedance is below one ohm; upon the impedance being below one ohm, then discharging a plurality of low voltage charges, the charges being of an amperage that is approximately double the amperage rating of the silicon crystal diode, of the electronic device on to one of the terminals of the silicon crystal diode until the silicon crystal diode is short-circuited and the silicon crystal diode's amperage is recalibrated to be below five ohms; and ensuring that the silicon crystal diode is short-circuited and that the silicon crystal diode's amperage is below five ohms after the silicon crystal diode cools by measuring the silicon crystal diode's properties with the multimeter.
  • The silicon crystal diode is short circuited when current can pass in either direction through the diode.
  • The short-circuited diode somehow prevents a person contacting an electric current that passes through it from being electrocuted. The inventors cannot determine or define how the electric current's properties change and believe that in time the phenomenon will be determined by the scientific community.
  • The inventors believe that using the short-circuited diodes of the present invention will conserve energy transmitted through electrical conductors that are downstream from the short-circuited diodes because they theorize that the electrical conductors will not heat to the same level that they would heat if passed through diodes that are not short-circuited.
  • The inventors also believe that electro-medical devices that use electrical currents to treat infirmities will be developed or improved using the short-circuited diodes of the present invention.
  • An advantage of the present invention is that it provides a short-circuited diode that changes the properties of electricity (alternating current in the range from 110 to 220 volts) that passes through it so that it will not electrocute a person contacting the current.
  • Another advantage of the present invention is that it prevents a person from dying contacting an electric device that has the short-circuited diode incorporated within the device.
  • While the inventor's above description contains many specificities, these should not be construed as limitations on the scope, but rather as an exemplification of several preferred embodiments thereof. Accordingly, the scope should not be determined by the embodiments illustrated, but by the appended claims and their legal equivalents.

Claims (1)

1. A short-circuited diode that changes the properties of an electric current that passes through it so that it does not electrocute a person contacting the current is prepared/made by a process comprising the steps of:
providing a silicon crystal diode having two terminals;
determining the silicon crystal diode's amperage rating;
providing a heat gun or heating device;
providing a multimeter;
providing an electronic device that provides a charge;
connecting the multimeter to the terminals of the diode;
heating the body of the diode with the heat gun or the heating device until the diode's impedance is below one ohm;
upon the impedance being below one ohm, then discharging a plurality of low voltage charges, the charges being of an amperage that is approximately double the amperage rating of the silicon crystal diode, of the electronic device on to one of the terminals of the silicon crystal diode until the silicon crystal diode is short-circuited and the silicon crystal diode's amperage is recalibrated to be below five ohms; and
ensuring that the silicon crystal diode is short-circuited and that the silicon crystal diode's amperage is below five ohms after the silicon crystal diode cools by measuring the silicon crystal diode's properties with the multimeter.
US16/281,082 2019-02-20 2019-02-20 Process of making a short-circuited diode that prevents electrocution Active US10756201B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US16/281,082 US10756201B1 (en) 2019-02-20 2019-02-20 Process of making a short-circuited diode that prevents electrocution
EP20758633.0A EP3928355A4 (en) 2019-02-20 2020-02-18 METHOD OF MANUFACTURING A SHORT-CIRCUITED DIODE WHICH PREVENTS ELECTROCUTION
MX2021010047A MX2021010047A (en) 2019-02-20 2020-02-18 A MANUFACTURING PROCESS OF A DIODE IN SHORT CIRCUIT THAT PREVENTS ELECTROCUTION.
CA3131147A CA3131147A1 (en) 2019-02-20 2020-02-18 A process of making a short-circuited diode that prevents electrocution
CN202080029429.7A CN114072924A (en) 2019-02-20 2020-02-18 Method for manufacturing short-circuit diode capable of preventing death caused by electric shock
PCT/US2020/018533 WO2020172104A1 (en) 2019-02-20 2020-02-18 A process of making a short-circuited diode that prevents electrocution
CONC2021/0011856A CO2021011856A2 (en) 2019-02-20 2021-09-09 Manufacturing process of a short-circuit diode that prevents electrocution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16/281,082 US10756201B1 (en) 2019-02-20 2019-02-20 Process of making a short-circuited diode that prevents electrocution

Publications (2)

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US20200266283A1 true US20200266283A1 (en) 2020-08-20
US10756201B1 US10756201B1 (en) 2020-08-25

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US16/281,082 Active US10756201B1 (en) 2019-02-20 2019-02-20 Process of making a short-circuited diode that prevents electrocution

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US (1) US10756201B1 (en)
EP (1) EP3928355A4 (en)
CN (1) CN114072924A (en)
CA (1) CA3131147A1 (en)
CO (1) CO2021011856A2 (en)
MX (1) MX2021010047A (en)
WO (1) WO2020172104A1 (en)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217621A (en) * 1978-09-22 1980-08-12 General Motors Corporation Circuit for detecting diode shorting
CA1162611A (en) * 1978-12-15 1984-02-21 Shohichi Kamata Diode faults detecting apparatus
CN87212903U (en) * 1987-08-28 1988-03-23 莫艺华 Multi-functional electroscope
DE4402023A1 (en) * 1993-12-07 1995-06-08 Elpro Ag Overvoltage protection device for electrified rail track
US5578936A (en) * 1995-01-23 1996-11-26 Fluke Corporation Method and apparatus for automatically testing semiconductor diodes
US7652480B2 (en) * 2007-04-26 2010-01-26 General Electric Company Methods and systems for testing a functional status of a light unit
CN201156061Y (en) * 2008-01-03 2008-11-26 江苏省电力公司南京供电公司 Counter strike preventing mechanical megameter
US9160164B2 (en) * 2010-03-02 2015-10-13 Accumetrics, Inc. Method and apparatus for fault detection of series diodes in rectifiers
EP2878964B8 (en) * 2013-12-02 2016-09-21 ABB Schweiz AG Detecting shorted diodes
US9829511B1 (en) * 2015-09-14 2017-11-28 The United States Of America As Represented By The Secretary Of The Navy Diode checker
CN105591368B (en) * 2015-12-31 2018-03-06 北京天诚同创电气有限公司 Method and device for revising working parameters of fuse

Also Published As

Publication number Publication date
WO2020172104A1 (en) 2020-08-27
CA3131147A1 (en) 2020-08-27
EP3928355A4 (en) 2023-03-08
US10756201B1 (en) 2020-08-25
CO2021011856A2 (en) 2022-01-17
MX2021010047A (en) 2021-11-18
EP3928355A1 (en) 2021-12-29
CN114072924A (en) 2022-02-18

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