US20170241931A1

US20170241931A1 - Sensing system

Info

Publication number: US20170241931A1
Application number: US15/515,090
Authority: US
Inventors: Tazuko Kitazawa; Noboru Iwata; Takanobu Sato
Original assignee: Sharp Corp
Current assignee: Sharp Corp
Priority date: 2014-09-30
Filing date: 2015-08-31
Publication date: 2017-08-24
Also published as: JP6495312B2; CN106796191A; JPWO2016052050A1; WO2016052050A1

Abstract

Provided is a sensing system that has a long life span. The sensing system includes a first detector (1) and a second detector (2) that detect at least one type of detection target which is included in a first concept which is common to both of detection targets, and which is included in a subordinate concept of the first concept; and a controller (3) that controls, according to a detected value from any one of the first detector (1) and the second detector (2), start, stop, or a detection condition of detection operations of the other detector.

Description

TECHNICAL FIELD

The invention relates to a sensing system.

BACKGROUND ART

Recently, various sensing systems that detect detection targets have been developed. Among these, a technique in order to realize a sensing system having a long life span has been developed.
For example, in PTL 1, a sensitive membrane array-type gas detector having a purpose of obtaining a long life span, long stability, and high detection accuracy is disclosed.
Specifically, a plurality of gas detection elements are provided, and one of the gas detection elements is caused to be in an operation state, and all the others are caused to be in a non-operation state. Also, a function of the gas detection element is the operation state is always checked, and if there is a disorder, the gas detection element is substituted with one of the other gas detection elements. Thereafter, in the same manner, ever time when there is a disorder in the gas detection element in the operation state, the gas detection element is substituted with remaining gas detection elements.

CITATION LIST

Patent literature

PTL 1: Japanese Unexamined Patent Application Publication No. 11-160267 (Laid-Open on Jun. 18, 1999)

Non Patent literature

NPL 1: Study on the Low-cost Process of High Performance Gas Sensing Materials by the Sol-Gel Method, by Masashi SHOYAMA and Noritsugu HASHIMOTO, Research Report of 2002 in Industrial Research Division, Science and Technology Promotion Center, Mie Prefecture No. 27-8 (2003)
NPL 2: Study on the improvement of the gas selectivity of thin-film gas sensors, Kazuhiro HARA, Hidekazu IMAI, Superconductivity Technology Center/High Tech Research Center Research Report (2002)

SUMMARY OF INVENTION

Technical Problem

Accordingly, the related art described above has a configuration in which a plurality of gas detection elements for substitution are provided in advance and has a configuration of detecting end of a life span of the gas detection element in use and substituting the detection element to a new gas detection element.
Accordingly, the related art described above has a problem that a plurality of gas detection elements for substitution have to be provided.
The invention has been conceived in view of the problem described above, and the purpose thereof is to provide a sensing system that does not require a plurality of gas detection elements for substitution and that has a long life span.

Solution to Problem

In order to solve the problem described above, according to one aspect of the invention, there is provided a sensing system including a first detector that detects a first detection target; a second detector that detects a second detection target; and a controller that controls start or stop of detection operations of the first detector and the second detector, in which the first detection target and the second detection target are detection targets included in a first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and is included in a subordinate concept or the first concept, and, according to a detected value from any one detector of the first detector and the second detector, the controller controls start, stop, or a detection condition of the detection operation of the other detector.

Advantageous Effects of Invention

According to an aspect of the invention, an effect in which a sensing system has a long life span is exhibited.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating an overview of a sensing system according to the invention.

FIGS. 2(a), 2(b), and 2(c) are diagrams illustrating an example of an external appearance of an alcohol detecting system according to Embodiment 1 of the invention.

FIG. 3 is a functional block diagram schematically illustrating a configuration of the alcohol detecting system according to Embodiment 1 of the invention.

FIGS. 4(a) and 4(b) are examples of a graph illustrating detected values with respect to humidity in a hygrometer and a semiconductor gas sensor according to Embodiment 1 of the invention.

FIGS. 5(a), 5(b) and 5(c) are flow charts illustrating flows of data processes performed by a controller according to Embodiment 1 of the invention.

FIG. 6 is a diagram illustrating an example of an external appearance of an air quality monitoring system according to Embodiment 2 of the invention.

FIG. 7 is a functional block diagram schematically illustrating a configuration of the air quality monitoring system according to Embodiment 2 of the invention.

FIGS. 8(a), 8(b) and 8(c) are flow charts illustrating flows of data processes performed by a controller according to Embodiment 2 of the invention.

FIG. 9 is a graph illustrating sensitivity dependency to an operation temperature (detected temperature) of a gas sensor using a ZnO—SO2 composite thin film.

FIGS. 10(a) and 10(b) are graphs illustrating gas selectivity of a semiconductor gas sensor depending on a combination with Pt or Pd catalyst.

FIG. 11 is a diagram illustrating an example of an external appearance of a gas sensing system according to Embodiment 3 of the invention.

FIG. 12 is a functional block diagram schematically illustrating a configuration of the gas sensing system according to Embodiment 3 of the invention.

FIGS. 13(a) and 13(b) are flow charts illustrating flows of data processes performed by a controller according to Embodiment 3 of the invention.

FIGS. 14(a) and 14(b) are diagrams illustrating an example of an eternal appearance of a light sensing system according to Embodiment 4 of the invention.

FIG. 15 is a functional block diagram schematically illustrating a configuration of the light sensing system according to Embodiment 4 of the invention.

FIGS. 16(a), 16(b) and 16(c) are flow charts illustrating flows of data processes performed by a controller according to Embodiment 4 of the invention.

FIG. 17 is a functional block diagram schematically illustrating a configuration of a light sensing system according to Embodiment 5 of the invention.

FIG. 18 is a flow chart illustrating a flow of data processes performed by a controller according to Embodiment 5 of the invention.

DESCRIPTION OF EMBODIMENTS

An overview of a sensing system according to the invention is described as follows with reference to FIG. 1. FIG. 1 is a diagram illustrating an overview of a sensing system 10 according to the invention.
(Main Configurations of Sensing System 10)
The sensing system 10 according to the invention includes a first detector 1, a second detector 2, and a controller (control means) 3.
(Detectors 1 and 2)
As the first detector 1 and the second detector 2, a photodetector, a microphone, a piezoelectric element, an ammeter, a voltmeter, a Tesla meter, a thermometer, an ion counter, a Geiger counter, a particle counter, a semiconductor gas sensor, an optical sensor, and a surface plasmon resonance (SPR) sensor can be used.
Detection principles of the first detector 1 and detection principles of the second detector 2 may be identical to or different from each other.
In this specification, parameters that the respective detectors directly detect are set as physical parameters (detection targets), and substances that changes the physical parameters are set as measurement targets, and a purpose of detecting the detection target is set as a detection purpose.
For example, a physical parameter is set as light intensity. The respective detectors detect changes of the inspection light that are generated by causing the inspection light applied to the measurement targets to penetrate the measurement target. The respective detectors detects light (fluorescent light and the like) generated by irradiating the measurement targets with inspection light (excitation light).
The detection purpose is to obtain information relating to a state of the detection targets by analyzing the physical parameters and calculating transmittance and wavelength shifts.
The physical parameters (detection targets) are, for example, electromagnetic wave intensity, sounds, forces, currents, voltages, magnetism, temperatures, and distances.
The detection purpose is to obtain information relating to states of the detection targets or bodies that include or generate the detection targets.
A first detection target and a second detection target are detection targets that are included in the first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and included in a subordinate concept of the first concept.
At least one of the first detection target or the second detection target includes a detection target other than the detection targets.
(Controller 3)
According to detected values from any one detector of the first detector or the second detector, the controller 3 controls detection conditions of starting, stopping (ending), or detecting the detection operation of the other detector.
Specifically, the controller 3 illustrated in FIG. 1 determines the detected value from one detector and controls a detection start, a detection stop, refreshment, and calibration of the other detector. Otherwise, the controller 3 determines a detected value from one detector and sets conditions of detection start, detection stop, refresh, and calibration of the other detector.
The controller 3 may be realized by a computer. In this case, the controller 3 may be a control program of the sensing system 10 that realizes the sensing system 10 with the computer by operating the computer as respective sections included in the sensing system 10. The controller 3 may be formed only with an electronic circuit.
The sensing system 10 may include a storage section or a display section.
The storage section stores, for example, a detected value from the first detector 1 and/or a detected value from the second detector 2. The storage section may store contents desired by a user who uses the sensing system 10.
The display section displays measured values corresponding to the detected value from the first detector 1 and/or the detected value from the second detector 2. The display section may display the contents desired by the user who uses the sensing system 10.
(Operation of Sensing System)
Subsequently, an operation of the sensing system 10 according to the invention is described. Examples of the operation of the sensing system 10 mainly include three operations below.
In the first operation, only one detector is operated, if the detected value from the corresponding detector is a prescribed value or greater or a prescribed value or less, or a change amount of the detected value from the detector is a prescribed value or greater or a prescribed value or less, the controller 3 causes the operation of the other detector to start.
In the second operation, the first detector 1 and the second detector 2 operate, detection results of one detector is a certain value or greater or a certain value or less or is changed to a certain value or less, the controller 3 stops (ends) the operation of the other detector.
In the third operation, at least one detector operates, and according to the detected value from the corresponding detector, the controller 3 sets the detection condition of the other detector. Refreshment or calibration is also included in this detection condition.
Hereinafter, some configurations of the operation of the sensing system 10 according to the invention are specifically described with reference to embodiments.

Embodiment 1

The embodiment of the invention is described as follows based on FIGS. 1 to 5. For convenience of explanation, members having the same functions as members described in the embodiment are denoted by the same reference numerals, and the descriptions thereof are omitted.
(External Appearance of Alcohol Detecting System 10 a)
An example of an external appearance of the sensing system according to an embodiment is described by using FIGS. 2(a) to 2(c). The sensing system according to an embodiment is an alcohol detecting system 10 a (sensing system). For example, the alcohol detecting system 10 a is used for checking a drinking amount or a degree of drunkenness of a human. According to the embodiment, an example in which the alcohol detecting system 10 a is used for checking alcohol of a driver in a vehicle is described. The detection purpose according to the embodiment is to obtain information on an ethanol concentration contained in exhaled breath of a human.
For example, FIG. 2(a) illustrates an example in which the alcohol detecting system 10 a is included a handle 101 of an automobile. FIG. 2(b) illustrates an example in which the alcohol detecting system 10 a is included in a seat 102 of an automobile. FIG. 2(c) is a block diagram schematically illustrating the alcohol detecting system 10 a.
As illustrated in FIG. 2(c), the alcohol detecting system 10 a detects water vapor included in sweat or exhaled breath of a human who gets in the automobile by a hygrometer 1 a (first detector) and starts the detection of a semiconductor gas sensor (second detector) 2 a that detects ethanol according to the detection.
(Main Configurations of Alcohol Detecting System 10 a)
Subsequently, with reference to FIG. 3, main configurations of the alcohol detecting system 10 a according to the embodiment are described. FIG. 3 is a functional block diagram schematically illustrating a configuration of the alcohol detecting system 10 a. As illustrated in FIG. 3, the alcohol detecting system 10 a includes the hygrometer 1 a, the semiconductor gas sensor 2 a, a controller 3 a, a display section 4 a, and a storage section 5 a.
(Hygrometer 1 a)
The hygrometer 1 a is a digital hygrometer using changes of electric resistance by absorbing moisture. The hygrometer 1 a detects humidity as the detection target. Here, the humidity indicates a water vapor concentration. The hygrometer 1 a sends the detected value to the controller 3 a.
(Semiconductor Gas Sensor 2 a)
The semiconductor gas sensor 2 a is a semiconductor gas sensor (semiconductor-type gas sensor and semiconductor film-type gas sensor). The semiconductor gas sensor 2 a detects an ethanol concentration and humidity as the detection targets. The semiconductor gas sensor 2 a sends the detected values to the controller 3 a.
Here, a semiconductor gas sensor, a contact combustion-type gas sensor, an optical gas sensor, and the like detect changes of physical parameters of a reaction film when the reaction film such as an oxide semiconductor reacts with gas. Generally, the physical parameter of the reaction film changes by humidity, and thus the physical parameter is greatly influenced by water vapor. Accordingly, the detection targets of the semiconductor gas sensor 2 a include water vapor.
The detection target of the hygrometer 1 a and the detection target of the semiconductor gas sensor 2 a are detection targets included in the first concept called gas. A common detection target of hygrometer 1 a and the semiconductor gas sensor 2 a is humidity included in the subordinate concept of the first concept, that is, the water vapor concentration.
(Controller 3 a)
The controller 3 a includes a detected value receiving section 31 a, a sensor operation determining section (control means) 32 a, a display controller 33 a, and a calculating section (calculating means) 34 a.
The detected value receiving section 31 a receives detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a and sends the detected values to the sensor operation determining section 32 a, the display controller 33 a, the calculating section 34 a, and the storage section 5 a.
The sensor operation determining section 32 a determines detected values from the hygrometer 1 a and/or the semiconductor gas sensor 2 a and controls operations of the hygrometer 1 a or the semiconductor gas sensor 2 a.
The control of the operation specifically described in “flow of processes of controller 3 a” described below.
The display controller 33 a receives detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a from the detected value receiving section 31 a, or the humidity and the ethanol concentration calculated by the calculating section 34 a and instructs the display section 4 a to display the detected values and the ethanol concentration on the display section 4 a.
If the detected value is disclosed to the user, the user can check whether the alcohol detecting system 10 a normally functions. The user can manipulate control conditions such as a detected temperature of the semiconductor gas sensor 2 a based on the display data, for example, in order to adjust sensitivity of the semiconductor gas sensor 2 a.
The display controller 33 a may perform instruction so as to display only the ethanol concentration calculated based on the hygrometer 1 a and the semiconductor gas sensor 2 a. Otherwise, the display controller 33 a may perform instruction so as to display a sobriety level determined from the calculated ethanol concentration.
The calculating section 34 a calculates a detected value and a concentration of ethanol from the detected values of the hygrometer 1 a and the semiconductor gas sensor 2 a.
That is, the calculating section 34 a excludes a detected value (detected value of humidity) of the detection target common to both of the hygrometer 1 a and the semiconductor gas sensor 2 a from the detected value from the semiconductor gas sensor 2 a and sets the detected value of the detection target (detected value of ethanol), which is not common to the hygrometer 1 a, of the semiconductor gas sensor 2 a as the detected value from the semiconductor gas sensor 2 a. The detected value is sent to the display controller 33 a and the storage section 5 a.
FIG. 4(a) is an example of a graph illustrating detected values of humidity in the hygrometer 1 a and the semiconductor gas sensor 2 a.
Here, the detected value from the hygrometer 1 a (first detector) is indicated by Z=cX+d. The detected value from the semiconductor gas sensor 2 a (second detector) is indicated by Y=aX+b.
If the value of Y is indicated with Z by using two equations above, Y=a(Z−d)/c+b can be indicated. Accordingly, if the value of Z can be indicated, the value of Y can be calculated. That is, a degree (detected value of the corresponding humidity in the semiconductor gas sensor 2 a) in which the humidity influence on the detected value from the semiconductor gas sensor can be calculated from the detected value detected by a hygrometer in a specific humidity by using a relation expression between humidity and the detected value from the hygrometer 1 a and a relation expression between humidity and the detected value from the semiconductor gas sensor 2 a.
Subsequently, the calculating section 34 a calculates a difference value between a detected value (sum of detected values of ethanol and humidity) measured in the semiconductor gas sensor 2 a and the detected value of the humidity in the semiconductor gas sensor 2 a calculated as described above. The detected value of ethanol can be calculated by calculating the difference value.
FIG. 4(b) is another example of a graph illustrating detected values with respect to the humidity of the hygrometer 1 a and the semiconductor gas sensor 2 a.
Here, the detected value from the hygrometer 1 a (first detector) is indicated by Z=g(X). The detected value from the semiconductor gas sensor 2 a (second detector) is indicated by Y=f(X).
As illustrated in FIG. 4(b), Z=g(X) or Y=f(X) are not simple functions such as a linear function.
The storage section 5 a may store a graph of relation expression with humidity and detected values from the hygrometer 1 a and humidity and a semiconductor gas sensor 2 a as illustrated in FIG. 4(b).
The calculating section 34 a calculates a degree (the detected value of the corresponding humidity in the semiconductor gas sensor 2 a) in which specific humidity influences on the detected value in the semiconductor gas sensor 2 a by using the corresponding table.
Specifically, the calculating section 34 a illustrated in FIG. 4(b) specifics an intersection point P1 with Z=g(X) by moving a detected value P0 detected by the hygrometer 1 a in an X axis in parallel. Subsequently, the calculating section 34 a specifies an intersection point P2 with Y=f(X) by moving the point P1 in a Y axis in parallel. Subsequently, the calculating section 34 a specifies an intersection point P3 with a Y axis by moving the intersection point P2 in an X axis in parallel. If the Y coordinate of the intersection point P3 is specified, degree (detected value in the corresponding humidity in the semiconductor gas sensor 2 a) in which the corresponding humidity influence on the detected value from the semiconductor gas sensor is calculated from the detected value detected by the hygrometer 1 a in specified humidity.
Subsequently, the detected value of ethanol in the semiconductor gas sensor 2 a is calculated by calculating a difference value between the detected value measured in the semiconductor gas sensor 2 a and the detected value of the humidity in the semiconductor gas sensor 2 a calculated as described above.
The calculating section 34 a may have a configuration of calculating an ethanol concentration from the corresponding detected value of ethanol.
The display section 4 a displays the humidity, the ethanol concentration, and the like, according to the instruction of the display controller 33 a.
The storage section 5 a stores correction formulae and correction factors calculated by the calculating section 34 a. The storage section 5 a stores the detected value from the semiconductor gas sensor 2 a and the detected value from the hygrometer 1 a. The storage section 5 a stores a control program or the like in the controller 3 a.
(Flow of Processes of Controller 3 a)
Subsequently, a flow of data processes performed by the controller 3 a is described by using FIG. 5(a). FIG. 5(a) is a flow chart illustrating a flow of data processes performed by the controller 3 a according to the embodiment.
The alcohol detecting system 10 a starts an operation, for example, when a door of a vehicle opens, when a person sits in a driver's seat, or when an engine is started. That is, at this point of time, the hygrometer 1 a and the semiconductor gas sensor 2 a start detection. If the detected value receiving section 31 a receives detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a, the corresponding detected values are stored in the storage section 5 a. The calculating section 34 a reads detected values stored in the storage section 5 a and calculates an ethanol concentration excluding humidity and influence on the humidity, according to the method described above (Step S1).
The sensor operation determining section 32 a stops detection of the semiconductor gas sensor 2 a after the calculation of the ethanol concentration (Step S2).
The sensor operation determining section 32 a stops an operation of the alcohol detecting system 10 a when a person disappears from a driver's seat or in a case where an engine stops (Step S3).
In the case of NO in Step S3, the hygrometer 1 a performs detection operation continuously or in a prescribed time interval. The sensor operation determining section 32 a monitors the detected value from the hygrometer 1 a at a prescribed time interval and determines whether a change amount of the detected value from the hygrometer 1 a is within a prescribed value (Step S4).
In a case where the sensor operation determining section 32 a determines that a change amount of the detected value from the hygrometer 1 a is within prescribed value (NO in Step S4), the sensor operation determining section 32 a proceeds to Step S3 without starting an operation of the semiconductor gas sensor 2 a.
In a case where the sensor operation determining section 32 a determines that the change amount of the detected value from the hygrometer 1 a is not within the prescribed value (YES in Step S4), the sensor operation determining section 32 a instructs the start of detection of the semiconductor gas sensor 2 a (Step S3). Thereafter, the process proceeds to Step S1.
It is assumed that, if a person in the vehicle drinks alcohol, humidity included in sweat or exhaled breath drastically changes, and thus the value detected by the hygrometer 1 a drastically changes. Accordingly, it is possible to increase a life span of the semiconductor gas sensor 2 a by operating the semiconductor gas sensor 2 a only when the operation is necessary.
In a case where the sensor operation determining section 32 a determines the change amount of the detected value from the hygrometer 1 a is within the prescribed value (NO in Step S4), the process proceeds to Step S3.

MODIFICATION EXAMPLE 1

Subsequently, a flow of other data processes is described by using FIG. 5(b).
The alcohol detecting system 10 a starts an operation, for example, when a door of a vehicle opens, when a person sits in a driver's seat, or when an engine is started. That is, at this point of time, the hygrometer 1 a and the semiconductor gas sensor 2 a start detection. If the detected value receiving section 31 a receives detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a, the corresponding detected values are stored in the storage section 5 a. The calculating section 34 a reads detected values stored in the storage section 5 a and calculates an ethanol concentration excluding humidity and influence on the humidity, according to the method described above (Step S11).
Subsequently to Step S11, the detected value receiving section 31 a receives detected values from the hygrometer 1 a and sends the detected values to the sensor operation determining section 32 a. The sensor operation determining section 32 a determines whether the detected value from the hygrometer 1 a drastically changes (Step S12). In the corresponding determination, in a case where the change amount of the detected value from the hygrometer 1 a per prescribed time changes twice or more, or in a case where a change amount of the detected value from the hygrometer 1 a is a prescribed value (for example, in a case where a detected temperature in the semiconductor gas sensor 2 a is set, a value of humidity that influences on the detected value from the semiconductor gas sensor 2 a in the detected temperature) or greater, the sensor operation determining section 32 a may determine that the detected value from the hygrometer 1 a drastically changes.
In a case where the sensor operation determining section 32 a determines that the detected value from the hygrometer 1 a drastically changes (YES in Step S12), the sensor operation determining section 32 a instructs the semiconductor gas sensor 2 a to heat the reaction film. That is, by controlling the temperature of the reaction film of the semiconductor gas sensor 2 a, performs control so that the semiconductor gas sensor 2 a does not detect the humidity which is the detection target common to the hygrometer 1 a (control the detection condition of the semiconductor gas sensor 2 a) (Step S13).
For example, the heating of the corresponding reaction film may be performed until the detected value from the semiconductor gas sensor 2 a becomes constant. The heating may be performed at a temperature and for a time in which the reaction film of the semiconductor gas sensor 2 a is sufficiently refreshed. The semiconductor gas sensor 2 a may restart the detection when the heating ends at a prescribed temperature or may perform detection while the reaction film is heated.
If a detected value receiving section 31 b receives the detected value from the hygrometer 1 a and the semiconductor gas sensor 2 a, the detected value receiving section 31 b sends the detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a to the calculating section 34 a. The calculating section 34 a calculates the ethanol concentration from the detected values from the hygrometer 1 a and the semiconductor gas sensor 2 a (Step S1).
A configuration in which an operation of the alcohol detecting system 10 a also stops when a person disappears from a driver's seat or when engine stops (Step S14) may be performed.
In the configuration above, the reaction film of the semiconductor gas sensor 2 a can be refreshed when the humidity increases. Therefore, the semiconductor gas sensor 2 a can perform detection in a state in which the influence of the humidity immediately after the refreshment is small. The water vapor concentration and the ethanol concentration can be independently (selectively) measured from the detected value from the hygrometer 1 a and the detected value from the semiconductor gas sensor 2 a.
Immediately after the reaction film of the semiconductor gas sensor 2 a is heated, the detected value from the semiconductor gas sensor 2 a does not receive an influence of the humidity and only detects ethanol. If time elapses from the heating of the reaction film, the reaction film of the semiconductor gas sensor 2 a becomes colder, the detected value from the semiconductor gas sensor 2 a receives an influence of the humidity.
At this point, if there is no change in the detected value from the hygrometer 1 a, the humidity does not change. Accordingly, the detected value from the semiconductor gas sensor 2 a in a case where the temperature of the reaction film of the semiconductor gas sensor 2 a under constant humidity changes (decreases) can be measured.
In a case where there are changes in the detected value from the hygrometer 1 a, the humidity can be calculated from the detected value from the hygrometer 1 a. Accordingly, the detected value from the semiconductor gas sensor 2 a in a case where the temperature of the reaction film of the semiconductor gas sensor 2 a under specific humidity changes (decreases) can be measured.
That is, relationships among the humidity, the temperature of the semiconductor gas sensor 2 a, and the detected value from the semiconductor gas sensor 2 a can be analyzed by accumulating these measured data.
It is possible to determine whether the state of the reaction film of the semiconductor gas sensor 2 a is normal (whether refreshment us sufficient or deterioration does not occur) by comparing the relationships among the detected value from the semiconductor gas sensor 2 a after the reaction film of the semiconductor gas sensor 2 a is heated, the temperature, and the humidity with the analyzed results.
After the detection start of the semiconductor gas sensor 2 a, in a case where the sensor operation determining section 32 a determines that the detected value from the hygrometer 1 a changes to a prescribed value or greater, the sensor operation determining section 32 a may perform instruction such that a temperature of the reaction film of the semiconductor gas sensor 2 a is maintained to a temperature in which an influence of the humidity is sufficiently suppressed.
According to the configuration, the semiconductor gas sensor 2 a can detect ethanol in a state in which influence of humidity is sufficiently suppressed. That is, the hygrometer 1 a selectively performs detection and the semiconductor gas sensor 2 a can selectively detects ethanol. The alcohol detecting system 10 a according to the embodiment can suppress power consumption by comparing with a configuration in which the reaction film of the semiconductor gas sensor 2 a is caused to be in a temperature in which influence of the humidity is always sufficiently suppressed. The alcohol detecting system 10 a does not have a configuration in which the reaction film of the semiconductor gas sensor 2 a is always heated at the time of detection. That is, the reaction film of the semiconductor gas sensor 2 a has a configuration of being heated, if necessary. Therefore, the consumption of the heated reaction film can be reduced, and the life span of the semiconductor gas sensor 2 a can be increased. Accordingly, the life span of the alcohol detecting system 10 a can be increased.
According to the detected value from the hygrometer 1 a, a configuration in which the detection of the semiconductor gas sensor 2 a is started or stopped (ended) or the detection condition is controlled or a configuration in which detection of the hygrometer 1 a starts or stops (ends) or the detection condition is controlled may be performed according to the detected value from the semiconductor gas sensor 2 a.

MODIFICATION EXAMPLE 2

Subsequently, a modification example of the flow of the data processes performed by the controller 3 a is described by using FIG. 5(c). According to this modification example, the first detector is set as a semiconductor gas sensor, and the second detector is set as a digital hygrometer. The controller 3 a determines operations of the first detector and the second detector based on the detected values from the semiconductor gas sensor which is the first detector and the digital hygrometer which is the second detector. FIG. 5(c) is a flow chart illustrating a flow of data processes performed by the controller 3 a according to this modification example.
The alcohol detecting system 10 a according to this modification example starts an operation when a door of a vehicle opens, when a person sits in a driver's seat, or when an engine is started. That is, at this point of time, the hygrometer and the semiconductor gas sensor start detection. If the detected value receiving section receives detected values from the hygrometer and the semiconductor gas sensor 2 a, the corresponding detected values are stored in the storage section 5 a. The calculating section 34 a reads detected values stored in the storage section 5 a and calculates an ethanol concentration excluding humidity and influence on the humidity, according to the method described above (Step S11).
The sensor operation determining section 32 a determines whether the change amount of the detected value from the semiconductor gas sensor 2 a is within the prescribed value (Step S15).
In a case where the sensor operation determining section 32 a determines whether the change amount of the detected value from the semiconductor gas sensor 2 a is within the prescribed value (is not changed) (NO in Step S15), the sensor operation determining section 32 a instructs the hygrometer 1 a to stop (end) detection (Step S16).
If the sensor operation determining section 32 a instructs the hygrometer 1 a to stop (end) the detection, the sensor operation determining section 32 a determines whether prescribed time has elapsed from the corresponding instruction (Step S17). For example, the sensor operation determining section 32 a refers to a timer section that can measure the elapsed time and performs the determination.
In a case where the sensor operation determining section 32 a determines that prescribed time has elapsed (YES in Step S17), the sensor operation determining section 32 a instructs the hygrometer 1 a to start the detection (Step S18).
An operation of the alcohol detecting system 10 a also stops when a person disappears from a driver's seat or in a case where engine stops (Step S14).
In a case where the sensor operation determining section 32 a determines that the change amount of the detected value from the semiconductor gas sensor 2 a is not within the prescribed value (changed) (YES in Step S15), the process proceeds to Step S11.
After the sensor operation determining section 32 a instructs the hygrometer 1 a to stop (end) the detection (Step S16), in a case where the sensor operation determining section 32 a determines whether the change amount of the detected value from the semiconductor gas sensor 2 a is within the prescribed value and determines the change amount of the detected value from the semiconductor gas sensor 2 a is within the prescribed value, the operation of the hygrometer may restart.
In this manner, this modification example has a configuration in which the detected values from the semiconductor gas sensor that reacts with both of humidity and ethanol are monitored. Therefore, if the detected value from the semiconductor gas sensor is within a prescribed range, it is possible to determine that humidity is not changed, and the hygrometer can be operated when the hygrometer is necessary. Accordingly, it is possible to suppress the usage frequency of the hygrometer and thus it is possible to increase the life span of the hygrometer.
In the period of time of stopping the hygrometer 1 a, the ethanol concentration is accurately measured without consideration and also the changes of the humidity and power consumption can be reduced by an amount of stopping the detection of the hygrometer 1 a.
In the above, according to this embodiment and this modification example, the alcohol detecting system 10 a is described as an example, but a methane/hydrogen sensor that is used in the fuel cell may be applied, instead of the semiconductor gas sensor 2 a. According to the configuration, it is possible to realize the sensing system that can perform detection without receiving an influence of the humidity. Accordingly, fuel cells and vehicles to which the fuel cells are mounted can be operated with low power consumption and low running cost.
In a case where a detector that optically detects changes of the physical parameter of reaction film (oxide semiconductor and the like) that reacts with the detection target in the semiconductor gas sensor 2 a is used, refreshment of the reaction film may be performed by photo irradiation.

Embodiment 2

Another embodiment according to the invention is described below based on FIGS. 6 to 9. For convenience of explanation, members having the same functions as members described in the embodiment are denoted by the same reference numerals, and the descriptions thereof are omitted.
(External Appearance of Air Quality Monitoring System 10 b)
An example of an external appearance of the sensing system according to the embodiment is described by using FIG. 6. The sensing system according to the embodiment is an air quality monitoring system 10 b (sensing system). The detection purpose of the air quality monitoring system 10 b is to obtain information relating to the air quality.
FIG. 6 is a diagram illustrating an example in which the air quality monitoring system 10 b is mounted on an air cleaner 103. The air cleaner 103 sucks the air in a direction of a direction b1 and discharges the air in a direction of a direction b2. For example, the air quality monitoring system 10 b may be included in an air conditioner (not illustrated).
In the air quality monitoring system 10 b according to the embodiment, for example, a semiconductor gas sensor (first detector) 1 b always detects a gas concentration of a volatile organic compound (VOC). If a detected value from a semiconductor gas sensor 1 b is a prescribed value or greater, detection of a light absorbance-type gas sensor (second detector) 2 b that detects the concentration of aldehyde-based gas is started.
The air quality monitoring system 10 b independently (selectively) measures the detected value from the semiconductor gas sensor 1 b and an aldehyde-based gas concentration and other gas concentrations from the light absorbance-type gas sensor 2 b.
For example, the air quality monitoring system 10 b may be mounted to an air purifier. For example, in a case where the air purifier cleans toluene and xylene having a heavy specific gravity, the air (toluene or xylene) close to a floor surface is circulated by causing exhaust air from the air purifier to be an air flow blowing diagonally forward and is and sucked. Meanwhile, in a case where the air cleaner cleans aldehyde-based gas having a light specific gravity and easily being collected at a ceiling, the air throughout the room is circulated by causing the exhaust air from the air purifier to be a vertical air flow and sucks the aldehyde-based gas.
(Main Configurations of Air Quality Monitoring System 10 b)
Subsequently, with reference to FIG. 7, main configurations of the air quality monitoring system 10 b according to the embodiment are described. FIG. 7 is a functional block diagram schematically illustrating a configuration of the air quality monitoring system 10 b. As illustrated in FIG. 7, the air quality monitoring system 10 b includes the semiconductor gas sensor 1 b, the light absorbance-type gas sensor 2 b, a controller 3 b, a display section 4 b, and a storage section 5 b.
(Semiconductor Gas Sensor 1 b)
The semiconductor gas sensor 1 b is a semiconductor gas sensor. The semiconductor gas sensor 1 b detects general VOC gas as a detection target. The semiconductor gas sensor 1 b sends the detected value to the controller 3 b.
(Light Absorbance-Type Gas Sensor 2 b)
The light absorbance-type gas sensor 2 b is a light absorbance-type gas sensor. The light absorbance-type gas sensor 2 b detects aldehyde-based gas as the detection target. The light absorbance-type gas sensor 2 b includes a reaction chip of which color changes when aldehyde-based gas comes into contact with the reaction chip and a measuring apparatus that measures absorbance of the chip. The light absorbance-type gas sensor 2 b sends the detected value to the controller 3 b.
The detection target of the semiconductor gas sensor 1 b and the detection target of the light absorbance-type gas sensor 2 b are detection targets included in the first concept. The common detection target of the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b is aldehyde-based gas included in a subordinate concept of the first concept.
The controller 3 b include the detected value receiving section 31 b, a sensor operation determining section 32 b, a display controller 33 b, and a calculating section 34 b.
The detected value receiving section 31 b is the same as the detected value receiving section 31 a described in Embodiment 1, and thus descriptions thereof are omitted.
The sensor operation determining section 32 b determines detected values from the semiconductor gas sensor 1 b and/or the light absorbance-type gas sensor 2 b and controls of the operation of the semiconductor gas sensor 1 b or the light absorbance-type gas sensor 2 b.
The control of the operation is described in “flow of processes controller 3 b” below.
The display controller 33 b receives detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b from the detected value receiving section 31 b or VOC gas concentration, aldehyde-based gas concentration calculated by the calculating section 34 a, and the like and instructs the display section 4 b to display the corresponding values.
If the detected values are disclosed to the user, the user can check whether the air quality monitoring system 10 b normally functions.
The user can manipulate control conditions for temporarily stopping the detection or refreshing the reaction film based on the display data.
The display controller 33 b perform instruction for displaying only the aldehyde-based gas concentration calculated from the detected value from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b. Otherwise, the display controller 33 b may perform instruction for displaying a cleanness level of the air determined from the calculated aldehyde-based gas concentration.
The calculating section 34 b calculates the detected values and the concentrations of gas other than aldehyde-based gas from the detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b. The calculated value is sent to the display controller 33 b and the storage section 5 b.
The calculating section 34 b may delete a detected value (detected value of aldehyde-based gas) of the detection target common to both of the light absorbance-type gas sensor 2 b and the semiconductor gas sensor 1 b from detected values from the semiconductor gas sensor 1 b and set a detected value (detected value of gas other than aldehyde-based gas) of the detection target, which is not common to the light absorbance-type gas sensor 2 b, of the semiconductor gas sensor 1 b as the detected value from the semiconductor gas sensor 1 b.
With respect to the calculation of the detected value of gas other than the aldehyde-based gas, a method described in the calculation of the detected value of ethanol from the calculating section 34 a described in Embodiment 1 can be applied. For example, the detected value and the concentration of the gas other than the aldehyde-based gas may be calculated by substituting the detected value from the hygrometer 1 a in the calculation of the detected value of ethanol described above to the detected value of the light absorbance-type gas sensor 2 b and substituting the detected value of the semiconductor gas sensor 2 a to the detected value of the semiconductor gas sensor 1 b.
The display section 4 b displays detected values, concentrations of aldehyde-based gas, and VOC gas and gas other than aldehyde-based gas in VOC gas, and the like, in response to the instruction of the display controller 33 b.
The storage section 5 b stores a correction formula, a correction factor, a graph, and the like calculated by the calculating section 34 b. The storage section 5 b stores a detected value of the light absorbance-type gas sensor 2 b and a detected value of the semiconductor gas sensor 1 b. The storage section 5 b stores a control program executed by the controller 3 b.
(Flow of Process of Controller 3 b)
Subsequently, the flow of data processes performed by the controller 3 b is described by using FIG. 8(a). FIG. 8(a) is a flow chart illustrating a flow of the data processes performed by the controller 3 b according to the embodiment.
The detected value receiving section 31 b receives the detected value from the semiconductor sensor 1 b and sends the detected value to the sensor operation determining section 32 b. The sensor operation determining section 32 b determines whether the detected value from the semiconductor gas sensor 1 b is the prescribed value or greater (Step S21).
For example, the corresponding prescribed value may be set as the detected value corresponding to the minimum concentration that damages health of the human body in any gas that can be detected by the semiconductor gas sensor 1 b. The any gas may set as the most toxic gas among gas that can be detected by the semiconductor gas sensor 1 b.
In a case where the sensor operation determining section 32 b determines that the detected value from the semiconductor gas sensor 1 b is the prescribed value or greater (YES in Step S21), the sensor operation determining section 32 b instructs the light absorbance-type gas sensor 2 b to start detection (Step S22).
If the detected value receiving section 31 b receives the detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b, the detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b are sent to the calculating section 34 b. The calculating section 34 b calculates the concentrations of VOC gas, aldehyde-based gas, and gas other than aldehyde-based gas in VOC gas from the detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b and the concentration is displayed on the display section 4 b (Step S23).
The sensor operation determining section 32 b determines whether the detected value from the semiconductor gas sensor 1 b is a prescribed target value or less (Step S24). In the corresponding step, the sensor operation determining section 32 b monitors the detected values from the semiconductor gas sensor 1 b at a prescribed time interval and determines whether a change amount of the detected value from the semiconductor gas sensor 1 b is a prescribed value or less. The corresponding target value may be a target value configured in an apparatus to which the air quality monitoring system 10 b is mounted.
In a case where the sensor operation determining section 32 b determines that the detected value from the semiconductor gas sensor 1 b is a prescribed target value or less (YES in Step S24), the sensor operation determining section 32 b instructs the light absorbance-type gas sensor 2 b to stop (end) the detection (Step S25).
In a case where the sensor operation determining section 32 b does not determine that the detected value from the semiconductor gas sensor 1 b is prescribed value or greater (NO in Step S21), the sensor operation determining section 32 b receives the detected value from the semiconductor gas sensor 1 b. Thereafter, the process proceeds to Step S21.
In a case where the sensor operation determining section 32 b does not determine that the detected value from the semiconductor gas sensor 1 b is within the prescribed target value or less (NO in Step S24), the process proceeds to Step S23.
For example, the light absorbance-type gas sensor 2 b needs time for initialize (refresh) the reaction chip. In the configuration in which the reaction film is refreshed while the light absorbance-type gas sensor 2 b does not perform detection, the detection of the light absorbance-type gas sensor 2 b can be accurately performed at a desired timing (when the detected value from the semiconductor gas sensor 1 b is a prescribed value or greater). Therefore, if the air quality monitoring system 10 b according to the embodiment is mounted to an air conditioner or an air purifier, the air conditioner or the air purifier can be controlled according to accurate detection results of the air quality monitoring system 10 b. Therefore, the corresponding air conditioner and the corresponding air purifier can effectively control the air quality in a room.
In a case where the reaction chip of the light absorbance-type gas sensor 2 b is dealt as consumables, if the light absorbance-type gas sensor 2 b is always detected, a lot of reaction chips are consumed.
The air quality monitoring system 10 b can control the light absorbance-type gas sensor 2 b so as to perform detection only when necessary according to the detected value from the semiconductor gas sensor 1 b. Therefore, the life span of the reaction chip of the light absorbance-type gas sensor 2 b increases, and thus the user does not have to frequently replace the reaction chips.
The calculating section 34 b calculates the concentration VOC gas, the concentration of aldehyde-based gas, and the concentration of gas other than aldehyde-based gas in VOC gas from the detected values from the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b. Accordingly, the air quality monitoring system 10 b can independently (selectively) measure VOC gas, aldehyde-based gas, and gas other than aldehyde-based gas in VOC gas.
If the detection speed of the semiconductor gas sensor 1 b responses faster than the detection of the light absorbance-type gas sensor 2 b, the followings can be said. That is, the response of the air quality monitoring system 10 b is fast, compared with the air quality monitoring system in which the light absorbance-type gas sensor 2 b always perform detection.
According to this embodiment, the air quality monitoring system 10 b in which the detection target is set as gas is exemplified. However, a water quality monitoring system in which the detection target is set as components in a liquid may be used.

MODIFICATION EXAMPLE

A modification example of the flow of the data processes performed by the controller 3 b is described by using FIG. 8(b). The controller 3 b according to this modification example controls the detection of the semiconductor gas sensor 1 b according to the detected value from the light absorbance-type gas sensor 2 b. FIG. 8(b) is a flow chart illustrating a flow of data processes performed by the controller 3 b according to this modification example.
As illustrated in FIG. 8(b), the detected value receiving section 31 b receives the detected value from the light absorbance-type gas sensor 2 b and sends the detected value to the sensor operation determining section 32 b. The sensor operation determining section 32 b determines whether the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or greater (Step S31). For example, the corresponding prescribed value may be set as a detected value corresponding to the minimum concentration that damages health of the human body in any gas that can be detected by the light absorbance-type gas sensor 2 b. The any gas may set as the most toxic gas among gas that can be detected by the light absorbance-type gas sensor 2 b.
In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or greater (YES in Step S31), the sensor operation determining section 32 b instructs the semiconductor gas sensor 1 b to start detection (Step S32).
Subsequently, the process proceeds to Step S23. Since Step S23 is described above, details descriptions thereof are omitted.
Subsequently to Step S23, the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or greater (Step S34). In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or greater (YES in Step S34), the sensor operation determining section 32 b instructs the semiconductor gas sensor 1 b to raise the temperature of the reaction film (Step S35).
Subsequently, the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is the prescribed target value or less (Step S36). In the corresponding step, the sensor operation determining section 32 b may monitor the detected value from the light absorbance-type gas sensor 2 b at a prescribed time interval and may determine whether the change amount of the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or less. The corresponding target value may be a target value that is configured in equipment to which the air quality monitoring system 10 b is mounted.
In a case where the sensor operation determining section 32 b determines whether the detected value from the light absorbance-type gas sensor 2 b is the prescribed target value or less (YES in Step S36), the sensor operation determining section 32 b instructs the semiconductor gas sensor 1 b stop (end) detection (Step S37).
In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is not the prescribed value or greater (NO in Step S31), the sensor operation determining section 32 b receives the detected value from the light absorbance-type gas sensor 2 b and the process proceeds to Step S31.
In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is not the prescribed value or greater (NO in Step S34), the process proceeds to Step S36.
In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is not less than the prescribed target value (NO in Step S36), the process proceeds to Step S23.
Another data process according to this modification example is described by using FIG. 8(c). Only the differences from the modification example are described.
After the detection of the semiconductor gas sensor 1 b and the detection of the light absorbance-type gas sensor 2 b start (Step S32 a), the process proceeds to Step S23. The processes from Step S23 to Step S36 are described above and thus the descriptions thereof are omitted.
In a case where the sensor operation determining section 32 b determines that the detected value from the light absorbance-type gas sensor 2 b is the prescribed target value or less (YES in Step S36), the sensor operation determining section 32 b raises the detected temperature of the semiconductor gas sensor (Step S37 a).
Subsequently, the process proceeds to Step S23. Step S23 is described above, and thus detailed descriptions thereof are omitted.
The sensor operation determining section 32 b is determined whether there is an ending instruction from the user (Step S38 a). In a case where there is an ending instruction from the user (YES in Step S38 a), the detection of the semiconductor gas sensor 1 b and the light absorbance-type gas sensor 2 b is ended. In a case where there is not an ending instruction from the user (NO in Step S38 a), the process proceeds to Step S23.
Here, the relationship with the detected temperature of the semiconductor gas sensor and the sensitivity to the detected gas is described. FIG. 9 is a graph illustrating sensitivity dependency to an operation temperature (detected temperature) of a gas sensor using a ZnO—SO2 composite thin film disclosed in NPL 1. FIG. 10(a) is a graph illustrating gas selectivity of the semiconductor gas sensor at 200° C. depending on whether Pt or Pd catalysts are combined disclosed in NPL 2. FIG. 10(b) is a graph illustrating gas selectivity of the semiconductor gas sensor at 200° C. depending on whether Pt or Pd catalysts are combined disclosed in NPL 2.
As illustrated in FIGS. 9 and 10, the semiconductor gas sensor changes sensitivity to the detected gas by the detected temperature. Accordingly, the selectivity of the detection target of the semiconductor gas sensor 1 b can be changed by adjusting the temperature of the reaction film of the semiconductor gas sensor 1 b and adjusting the detected temperature.
According to the data processes, in a case where the detected value from the light absorbance-type gas sensor 2 b is the prescribed value or greater, the temperature of the reaction film of the semiconductor gas sensor 1 b is raised. Therefore, in the same principle as the selectivity of the semiconductor gas sensor described above, the semiconductor gas sensor 1 b can be controlled such that the semiconductor gas sensor 1 b seldom detects aldehyde-based gas.
In this embodiment and the modification example, the sensor operation determining section 32 b may stop detection of the light absorbance-type gas sensor 2 b when the detected value from the semiconductor gas sensor 1 b becomes a constant value. In this case, timing for starting the detection of the light absorbance-type gas sensor 2 b may be determined according to the change amount of the detected value from the semiconductor gas sensor 1 b. According to the detected value from the semiconductor gas sensor 1 b, another operation condition (configured temperature, flow rate of detection target, applied voltage, and the like) of the light absorbance-type gas sensor 2 b may be determined.
The operation condition influences on the detection sensitivity, the life span, and the power consumption of the light absorbance-type gas sensor 2 b and the like. The air quality monitoring system 10 b determines these operation conditions of the light absorbance-type gas sensor 2 b according to the detected value from the semiconductor gas sensor 1 b. Therefore, in view of detection sensitivity of the light absorbance-type gas sensor 2 b, a usage period of time of the light absorbance-type gas sensor 2 b, a period of time until refreshment, a power consumption of the light absorbance-type gas sensor 2 b, a running cost of the light absorbance-type gas sensor 2 b, and reduction of the consumption of the light absorbance-type gas sensor 2 b, the suitable detection condition of the light absorbance-type gas sensor 2 b can be configured.

Embodiment 3

Another embodiment of the invention is described below based on FIGS. 11 to 13. For convenience of explanation, members having the same functions as members described in the embodiment are denoted by the same reference numerals, and the descriptions thereof are omitted.
(External Appearance of Gas Sensing System 10 c)
An example of an external appearance of the sensing system according to the embodiment is described by using FIG. 11. The sensing system according to the embodiment is a gas sensing system 10 c (gas sensing system). FIG. 11 is a diagram illustrating an example in which the gas sensing system 10 c is mounted on an automobile 104. That is, the detection purpose of the gas sensing system 10 c is to obtain information relating to the exhaust air gas concentration of the automobile 104.
In the gas sensing system 10 c according to the embodiment, for example, a first semiconductor gas sensor (first detector) 1 c of which the detection condition is configured as 200° C. always detect CO, NO, and NO2 gas concentrations, and if the detected value from the first semiconductor gas sensor 1 c is the prescribed value or greater, the detection of a second semiconductor gas sensor 2 c (second detector) of which the detection condition for detecting CO is configured as 400° C. starts.
That is, the gas sensing system 10 c according to the embodiment has a configuration in which the detectors having the same detection principle detect the detection targets by the different detection condition. For example, as illustrated in FIG. 9, in the gas sensor using a ZnO—SO2 composite thin film, sensitivity dependency of the detection target varies depending on the operation temperature (detected temperature).
If it is determined that the detected value of CO from the gas sensing system 10 c from the detected value from the second semiconductor gas sensor 2 c is high, feed back is performed to the generation source of the detected gas. For example, if the detected gas having a high detected value is CO, the possibility of incomplete combustion of fuel is considered. The gas sensing system 10 c sends the information illustrating that the CO concentration is high to a combustion controlling device 20 that controls the combustion of fuel. Accordingly, the combustion controlling device 20 can perform the control of diluting the fuel according to the corresponding information.
(Main Configurations of Gas Sensing System 10 c)
Subsequently, with reference to FIG. 12, main configurations of the gas sensing system 10 c according to the embodiment are described. FIG. 12 is a functional block diagram schematically illustrating a configuration of the gas sensing system 10 c. As illustrated in FIG. 12, the gas sensing system 10 c includes the first semiconductor gas sensor 1 c, the second semiconductor gas sensor 2 c, a controller 3 c, a display section 4 c, and a storage section 5 c.
(First Semiconductor Gas Sensor 1 c)
The first semiconductor gas sensor 1 c is a semiconductor gas sensor of which the detection condition is configured as 200° C. As illustrated in FIG. 12, the first semiconductor gas sensor 1 c sets NO, NO2, and CO as detection targets. The first semiconductor gas sensor 1 c sends the detected values to the controller 3 c.
(Second Semiconductor Gas Sensor 2 c)
The second semiconductor gas sensor 2 c is a semiconductor gas sensor of which the detection condition is configured as 400° C. As illustrated in FIG. 12, the second semiconductor gas sensor 2 c sets CO as a detection target. The second semiconductor gas sensor 2 c sends the detected value to the controller 3 c.
The detection target of the first semiconductor gas sensor 1 c and the detection target of the second semiconductor gas sensor 2 c are detection targets included in the first concept which is gas. The detection target common to the detection target of the first semiconductor gas sensor 1 c and the detection target of the second semiconductor gas sensor 2 c is CO included in the subordinate concept of the first concept.
The controller 3 c includes a detected value acquiring section 31 c, the sensor operation determining section 32 c, the display controller 33 c, a calculating section 34 c, and a gas concentration determining section 35 c.
The detected value acquiring section 31 c receives the detected values from the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c, and sends the detected values to a sensor operation determining section 32 c, a display controller 33 c, the calculating section 34 c, the gas concentration determining section 35 c, and the storage section 5 c.
The sensor operation determining section 32 c determines detected values from the first semiconductor gas sensor 1 c and/or the second semiconductor gas sensor 2 c and controls an operation of the first semiconductor gas sensor 1 c or the second semiconductor gas sensor 2 c.
The control of the operation is specifically described in “flow of processes of controller 3 c”.
The display controller 33 c receives detected values from the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c from the detected value acquiring section 31 c or the CO gas concentration calculated by the calculating section 34 c and instructs the display section 4 c to display the corresponding value.
If the detected value is disclosed to the user, the user can check whether the gas sensing system 10 c normally functions.
The user can manipulate control conditions of an automobile such as accelerator and brake manipulation based on the display data.
The display controller 33 c may display only the CO concentration and may display the combustion state determined from the CO concentration.
The calculating section 34 c calculates the detected value of gas other than CO in the gas detected by the first semiconductor gas sensor 1 c and the CO concentration from the detected value from the second semiconductor gas sensor 2 c. The calculated value is sent to the gas concentration determining section 35 c, the display controller 33 c, and the storage section 5 c.
The calculation section 34 c may exclude a detected value (detected values of CO concentration) of the detection target common to both of the second semiconductor gas sensor 2 c and the first semiconductor gas sensor 1 c from the detected value from the first semiconductor gas sensor 1 c and set a detected value (detected value of gas other than CO) of the detection target, which is not common to the second semiconductor gas sensor 2 c, of the first semiconductor gas sensor 1 c as the detected value from the semiconductor gas sensor 1 c.
The gas concentration determining section 35 c determines whether the CO concentration received from the calculating section 34 c is the prescribed value or greater. The gas concentration determining section 35 c may determine whether the detected value from the second semiconductor gas sensor 2 c is the prescribed value or greater. If the calculated value or the detected value is the prescribed value or greater, the high concentration CO information indicating that CO is higher than the prescribed concentration is sent to the combustion controlling device 20.
The display section 4 c displays the detected values from the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c and the concentration calculated from the corresponding detected values according to the instruction of the display controller 33 c.
The storage section 5 c stores the correction formula, the correction factor, the graph, and the like that are used by the calculating section 34 c in calculation. The storage section 5 c stores the detected values from the first semiconductor gas sensor 1 c, the second semiconductor gas sensor 2 c, and the like. The storage section 5 c stores the control programs executed by the controller 3 c.
(Flow of Processes of Controller 3 c)
Subsequently, the flow of the data processes performed by the controller 3 c is described by using FIG. 13(a). FIG. 13(a) is a flow chart illustrating a flow of data processes performed by the controller 3 c according to the embodiment.
The detected value acquiring section 31 c receives the detected values from the first semiconductor gas sensor 1 c and sends the detected values to the sensor operation determining section 32 c. The sensor operation determining section 32 c determines whether the detected value from the first semiconductor gas sensor 1 c is the prescribed value or greater (Step S41).
For example, the corresponding prescribed value is the detected value corresponding to the minimum concentration in which CO damages health of the human body.
In a case where the sensor operation determining section 32 c determines that the detected value from the first semiconductor gas sensor 1 c is a prescribed value or greater (YES in Step S41), the sensor operation determining section 32 c instructs the second semiconductor gas sensor 2 c to start detection (Step S42).
In Step S42, if the sensor operation determining section 32 c instructs the second semiconductor gas sensor 2 c to start detection, the sensor operation determining section 32 c determines that prescribed time has elapsed from the corresponding instruction (Step S43). For example, the sensor operation determining section 32 c may perform the determination with reference to the timer section that can measure the elapsed time.
The prescribed time is equal to or longer than the time in which an operation of the second semiconductor gas sensor 2 c becomes stable, and the generation of CO gas can be accurately detected. For example, in a case where the corresponding prescribed time is configured, the corresponding prescribed time can be configured with reference to the detection result of the CO gas.
The prescribed time is a sufficient time that can detect the generation of the CO gas in which the concentration of CO gas becomes stable, the average value of the change can be determined, and the like.
The prescribed time is the time in which the power consumption of the second semiconductor gas sensor 2 c is suppressed as much as possible.
In a case where the sensor operation determining section 32 c determines that the prescribed time has not elapsed from the instruction of the detection start of the second semiconductor gas sensor 2 c (NO in Step S43), the sensor operation determining section 32 c does not instruct the second semiconductor gas sensor 2 c to stop (end) the detection.
Subsequently, the calculating section 34 c calculates the concentrations of CO and gas other than CO from the detected values from the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c received from the detected value acquiring section 31 c. The calculating section 34 c sends the calculated concentrations of CO and gas other than CO to the gas concentration determining section 35 c (Step S44).
The gas concentration determining section 35 c determines whether the concentration of the received CO is prescribed value or greater (Step S45).
In a case where the gas concentration determining section 35 c determines that the received concentration of CO is a prescribed value or greater (YES in Step S45), the gas concentration determining section 35 c sends the high concentration CO information to the combustion controlling device 20 (Step S46). Thereafter, the process proceeds to Step S43.
In a case where the sensor operation determining section 32 c determines that the detected value from the first semiconductor gas sensor 1 c is not the prescribed value or greater (NO in Step S41), the detected values are received from the first semiconductor gas sensor 1 c and the process proceeds to Step S41.
In a case where the gas concentration determining section 35 c determines that the received concentration of CO is not the prescribed value or greater (NO in Step S45), the process proceeds to Step S43.
In a case where the sensor operation determining section 32 c determines that the prescribed time has elapsed from the start instruction of the second semiconductor gas sensor 2 c (YES in Step S43), the sensor operation determining section 32 c instructs the second semiconductor gas sensor 2 c to stop (end) the detection (Step S47).
According to the configuration above, the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c are semiconductor gas sensors having the same detection principles. Accordingly, the process amounts of the control processes of two detectors can be reduced. Therefore, the controller 3 c can be formed with the simple configuration.
If both of the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c always perform detection, power consumption is applied, and the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c are extremely consumed and thus the life spans thereof are shortened.
The gas sensing system 10 c starts selective detection of the second semiconductor gas sensor 2 c for detecting specific gas according to the detected values to the plurality types of gas of the first semiconductor gas sensor 1 c.
Accordingly, the selective detection of the detection target and the realization of the gas sensing system 10 c in which the energy saving and a long life span are compatible with each other becomes possible.
If the first semiconductor gas sensor 1 c responses faster than the second semiconductor gas sensor 2 c, the following can be said. That is, the response of the gas sensing system 10 c is fast, compared with the gas sensing system in which the second semiconductor gas sensor 2 c always perform detection.

MODIFICATION EXAMPLE

Subsequently, a modification example of the flow of the data processes performed by the controller 3 c is described by using FIG. 13(b). The controller 3 c according to this modification example starts the detection of the second semiconductor gas sensor 2 c according to the detected value from the first semiconductor gas sensor 1 c and configures detection condition of the second semiconductor gas sensor 2 c according to the detected value from the first semiconductor gas sensor 1 c and/or the second semiconductor gas sensor 2 c. FIG. 13(b) is a flow chart illustrating a flow of data processes performed by the controller 3 b according to this modification example.
Steps S41, S42, and S43 are described above and thus the descriptions thereof are omitted.
As illustrated in FIG. 13(b), in a case where the sensor operation determining section 32 c determines that the prescribed time has not elapsed from the instruction of the detection start of the second semiconductor gas sensor 2 c (NO in Step S43), the sensor operation determining section 32 c does not instruct the second semiconductor gas sensor 2 c to stop (end) the detection the process proceeds to Step S53.
The sensor operation determining section 32 c configures the detection condition of the second semiconductor gas sensor 2 c according to the detected value from the second semiconductor gas sensor 2 c received from the detected value acquiring section 31 c. The sensor operation determining section 32 c instructs the second semiconductor gas sensor 2 c to detect the configured detection condition (Step S53).
Here, the detection condition of the second semiconductor gas sensor 2 c configured by the sensor operation determining section 32 c is described.
For example, in a case where the sensor operation determining section 32 c determines that the concentration of gas other than CO is sufficiently low with respect to the CO concentration (for example, one tenth of CO concentration), the temperature of the reaction film of the second semiconductor gas sensor 2 c is adjusted in order to raise the detection sensitivity of CO. For example, as illustrated in FIG. 9, detection sensitivity with respect to CO in a case where the reaction film is 300° C. is high, compared with a case where the reaction film of the second semiconductor gas sensor 2 c is 400° C. Also in a case where the reaction film is 300° C., specificity of the detection with respect to CO can be maintained. Accordingly, the sensor operation determining section 32 c may perform instruction such that the reaction film of the second semiconductor gas sensor 2 c becomes 300° C.
If the sensor operation determining section 32 c determines that the detected value from the second semiconductor gas sensor 2 c is low, the detection time is configured to be long, and if the sensor operation determining section 32 c determines that the detected value from the second semiconductor gas sensor 2 c is high, the detection time is configured to be short.
The second semiconductor gas sensor 2 c receives the instruction of the detection condition and performs detection in the corresponding configured detection condition (Step S54). Thereafter, the process proceeds to Step S44.
Steps S44, S45, S46, and S47 are described above, and thus the descriptions thereof are omitted.
Other operation conditions (configured temperature flow, rate of detection target, applied voltage, and the like) of the second semiconductor gas sensor 2 c may be determined according to the detected value from the first semiconductor gas sensor 1 c.
The operation conditions influence on the detection sensitivity, a life span, and a power consumption of the second semiconductor or gas sensor 2 c and the like.
The gas sensing system 10 c determines these operation conditions of the second semiconductor gas sensor 2 c according to the detected value from the first semiconductor gas sensor 1 c. Therefore, in view of the detection sensitivity of the second semiconductor gas sensor 2 c, a period of time to the refreshment in the second semiconductor gas sensor 2 c, a power consumption of the second semiconductor gas sensor 2 c, a running cost of the second semiconductor gas sensor 2 c, and consumption suppression of the second semiconductor gas sensor 2 c, the suitable detection condition of the second semiconductor gas sensor 2 c can be configured.
Particularly, in a case where the second semiconductor gas sensor 2 c has the characteristics in that the life span is short, the power consumption is great, the running cost is high, a consumption section is included, and initialization (refreshment) is difficult, and the like, compared with that of the first semiconductor gas sensor 1 c, the detection of the second semiconductor gas sensor 2 c can be controlled in the gas sensing system 10 c in the detection condition in which these disadvantages of the second semiconductor gas sensor 2 c are suppressed.
According to the detected value from the second semiconductor gas sensor 2 c received from the detected value acquiring section 31 c, the sensor operation determining section 32 c perform instruction such that the temperature of the reaction film of the second semiconductor gas sensor 2 c is decreased from 400° C. to 300° C. Accordingly, as described above, while specificity of the detection to CO is maintained, detection sensitivity to CO can be raised. It is possible to reduce the power consumption by decreasing the detected temperature of the second semiconductor gas sensor 2 c.
In this embodiment and the modification example, a gas sensing system for detecting CO is exemplified, but the target of the gas sensing system is not limited to CO. It is possible to realize the gas sensing system causing gas other than CO to be a target, for example, by the types of the reaction films of the first semiconductor gas sensor 1 c and the second semiconductor gas sensor 2 c, and detection conditions.
According to this embodiment, the gas sensing system 10 c that detects the exhaust air gas of the automobile is exemplified, but the gas sensing system 10 c can be applied to a system that detects organic gas such as ethylene, mercaptan, and the like generated from food in a refrigerator.
According to this embodiment, the gas sensing system in which the detection target is set as gas is exemplified, but the invention may be applied to a water quality monitoring system in which the detection target is set as components in the liquid.
In Embodiments 1, 2, and 3, the following configurations can be applied to the heating of the reaction film of the semiconductor gas sensor.
That is, in the semiconductor gas sensor that optically detects the changes of the physical parameter of the reaction film formed by the oxide semiconductor and the like, in a case where the reaction film is heated by light, the detection condition can be caused to be the light intensity that heats the reaction film.

Embodiment 4

The embodiment of the invention is described below based on FIGS. 14 to 16. For convenience of explanation, members having the same functions as members described in the embodiment are denoted by the same reference numerals, and the descriptions thereof are omitted.
(External Appearance of Light Sensing System 10 d)
An example of the external appearance of the sensing system according to the embodiment is described by using FIGS. 14(a) and 14(b). The sensing system according to the embodiment is a light sensing system 10 d (sensing system) of which the detection purpose is to obtain information on existence or a state of a substance from the penetration, reflection, absorption, diffusion, and a light emission spectrum of light.
FIGS. 14(a) and 14(b) are diagrams illustrating external appearances of the light sensing system 10 d. As illustrated in FIG. 14(a), for example, the light sensing system 10 d irradiates a leaf 120 with light from a light source 110 by using an optical fiber. The light sensing system 10 d detects light that penetrates the leaf 120 (penetrating light).
As an example of the light sensing system 10 d, as illustrated in FIG. 14(b), the light sensing system 10 d irradiates the leaf 120 with light from the light source 110 by using a lens 115. The light sensing system 10 d detects light that penetrates the leaf 120 by using the lens 115.
The state of the leaf 120 can be analyzed by the light sensing system 10 d.
The configuration in which the light sensing system 10 d detects penetrating light is exemplified. However, a configuration in which the light sensing system 10 d detects reflected or diffused light may be applied.
(Main Configurations of Light Sensing System 10 d)
Subsequently, with reference to FIG. 15, main configurations of the light sensing system 10 d according to the embodiment are described. FIG. 15 is a functional block diagram schematically illustrating a configuration of the light sensing system 10 d. As illustrated in FIG. 15, the light sensing system 10 d includes a Si photodetector (first detector) 1 d, a spectrometer (second detector) 2 d, a controller 3 d, a display section 4 d, and a storage section 5 d.
(Si Photodetector 1 d)
The Si photodetector 1 d detects light in a red to infrared wavelength range (for example, 600 nm to 1,100 nm), as the detection target. The Si photodetector 1 d sends the detected value to the controller 3 d.
(Spectrometer 2 d)
The spectrometer 2 d detects light in an ultraviolet to near infrared wavelength range (for example, 300 nm to 750 nm) as the detection target. The spectrometer 2 d sends the detected value to the controller 3 d.
Here, the detection target of the Si photodetector 1 d and the detection target of the spectrometer 2 d are detection targets included in the first concept that is light intensity. The detection target common to the Si photodetector 1 d and the spectrometer 2 d is light intensity in a wavelength of 600 nm to 750 nm included in the subordinate concept of the first concept.
(Controller 3 d)
The controller 3 d includes a detected value acquiring section 31 d, a sensor operation determining section 32 d, a display controller 33 d, and a calculating section 34 d.
The detected value acquiring section 31 d receives the detected value from the Si photodetector 1 d and the spectrometer 2 d and sends the sensor operation determining section 32 d, the display controller 33 d, the calculating section 34 d, and the storage section 5 d.
The sensor operation determining section 32 d determines the detected values from the Si photodetector 1 d and/or the spectrometer 2 d and controls the detection operations of the Si photodetector 1 d or the spectrometer 2 d.
The control of the detection operation is specifically described below in “flow of processes of controller 3 d”.
The display controller 33 d receives the detected values from the Si photodetector 1 d and the spectrometer 2 d from the detected value acquiring section 31 d or the light intensity in a wavelength calculated by the calculating section 34 d and instructs the display section 4 d to display the detected value and the light intensities of the respective wavelengths on the display section 4 d.
If the detected value and the light intensity in the respective wavelengths are displayed on the display section 4 d, the user can look at the corresponding display section 4 d, so as to check whether the light sensing system 10 d normally functions. The user can manipulate the control conditions such as a wavelength range of light to be measured, for example, based on the display data (detected value and the light intensity in the respective wavelengths) displayed on the display section 4 d.
The display controller 33 d may instruct the display section 4 d to display the light intensity calculated from the detected values from the Si photodetector 1 d and the spectrometer 2 d. The display controller 33 d may instruct the display section 4 d to display a growth state or a moisture amount of the leaf determined from the detected values from the Si photodetector 1 d and the spectrometer 2 d.
The calculating section 34 d calculates the detected value of the light intensity in a wavelength of 750 to 1,100 nm from the detected values from the Si photodetector 1 d and the spectrometer 2 d. The calculated values are sent to the display controller 33 d and the storage section 5 d.
The calculating section 34 d may exclude a detected values (600 to 750 nm) of the detection target common to both of the Si photodetector 1 d and the spectrometer 2 d from the detected values of the Si photodetector 1 d and set a detected value (detected value of 750 to 1,100 nm) from the detection target, which is not common to the spectrometer 2 d, of the Si photodetector 1 d as the detected value from the Si photodetector 1 d.
In the calculation of the detected value of the light intensity in a wavelength of 750 to 1,100 nm, the calculation method described in the calculation of the detected value of ethanol of the calculating section 34 a described in Embodiment 1 can be applied. For example, the integral detected value of the light intensity and the light intensity at a wavelength of 750 to 1,100 nm may be calculated by substituting the detected value from the hygrometer 1 a in the calculation of the detected value of ethanol of Embodiment 1 to a detected value integrated with 600 nm to 750 nm of the spectrometer 2 d and substituting the detected value from the semiconductor gas sensor 2 a of Embodiment 1 to the detected value from the Si photodetector 1 d.
The “integrated detected value” and the “integral detected value” are integral value of the light intensity in a certain wavelength range in a case where a horizontal axis is set as a light wavelength, and a vertical axis is set as a light intensity, and detected values from the spectrometer are displayed as a chart.
The storage section 5 d stores the correction formula, the correction factor, and the graph used by the calculating section 34 d in calculation. The storage section 5 d stores the detected values from the Si photodetector 1 d and the spectrometer 2 d, and the like. The storage section 5 d stores the control programs executed by the controller 3 d.
(Flow of Processes of Controller 3 d)
Subsequently, the flow of the data processes performed by the controller 3 d is described by using FIG. 16(a). FIG. 16(a) is a flow chart illustrating a flow of the data processes performed by the controller 3 d according to the embodiment.
The detected value acquiring section 31 d receives the detected value from the Si photodetector 1 d and sends the detected value to the sensor operation determining section 32 d. The sensor operation determining section 32 d determines whether the detected value from the Si photodetector 1 d is changed (Step S61).
For example, in the determination, in a case where the change amount of the detected value from the Si photodetector 1 d for each prescribed time is changed by two times or greater, or in a case where the detected value from the Si photodetector 1 d at the time of detection start is changed by one time or greater, it is possible to determine that the detected value from the Si photodetector 1 d is changed.
In a case where the sensor operation determining section 32 d determines that the detected value from the Si photodetector 1 d is changed (YES in Step S61), the sensor operation determining section 32 d instructs the spectrometer 2 d to start the detection (Step S62).
The detected value acquiring section 31 d receives the detected values from the Si photodetector 1 d and the spectrometer 2 d and sends the detected values from the Si photodetector 1 d and the spectrometer 2 d to the calculating section 34 d. The calculating section 34 d calculates the light intensity in a wavelength of 750 to 1,100 nm from the detected values from the Si photodetector 1 d and the spectrometer 2 d (Step S63).
The sensor operation determining section 32 d monitors the detected values from the Si photodetector 1 d at a prescribed time interval and determines whether the change amount of the detected values from the Si photodetector 1 d is within the prescribed value (Step S64).
In a case where the sensor operation determining section 32 d determines that the change amount of the detected value from the Si photodetector 1 d is within the prescribed value (YES in Step S64), the sensor operation determining section 32 d instructs the spectrometer 2 d to stop (end) the detection.
In a case where the sensor operation determining section 32 d does not determine that the detected value from the Si photodetector 1 d is changed (in a case of NO in Step S61), the detected value acquiring section 31 d receives the detected value from the Si photodetector 1 d and the process proceeds to Step S61.
In a case where the sensor operation determining section 32 d determines that the change amount of the detected value from the Si photodetector 1 d not within the prescribed value (NO in Step S64), the process proceeds to Step S63.
According to the configuration described above, in a case where it is determined that the detected value from the Si photodetector 1 d is changed, the detection of the spectrometer 2 d starts.
The change of the detected values from the Si photodetector 1 d means a state in which the light in a specific wavelength performs penetration, reflection, absorption, diffusion, and emission with respect to the substance. That is, in the configuration of this embodiment, the detection of the spectrometer 2 d starts when the light in a specific wavelength performs penetration, reflection, absorption, diffusion, and emission with respect to the substance. Since a spectrum can be measured in the spectrometer 2 d, detailed analysis becomes possible. Accordingly, only when the specific analysis of the spectrometer 2 d is required, the spectrometer 2 d can be started. Accordingly, the power consumption of the light sensing system 10 d can be reduced. The spectrometer 2 d does not have to always perform detection. Therefore, the consumption generated according to the detection time can be suppressed. That is, the life span of the sensing system can be increased.
The detected value from the Si photodetector 1 d and the detected value from the spectrometer 2 d are analyzed together, so as to obtain detailed information.
The sensor operation determining section 32 d may configure the detection condition (measuring time, a configured temperature, an applied voltage, and the like) of the spectrometer 2 d from the detected value from the Si photodetector 1 d, For example, according to the detected value from the Si photodetector 1 d, the applied voltage may be adjusted such that the detection sensitivity of the spectrometer 2 d becomes suitable sensitivity. Accordingly, it is not concerned that the spectrometer 2 d breaks due to an input exceeding the detection limit.
The sensor operation determining section 32 d determines the time duration for detecting the spectrometer 2 d from the detected value from the Si photodetector 1 d.
According to the configuration above, the detection condition described above influence on the detection sensitivity, the life span, and the power consumption of the spectrometer 2 d and the like. Therefore, in view of detection sensitivity of the spectrometer 2 d, the usage period of time of the spectrometer 2 d, the period of time until the refreshment, the power consumption, the running cost, the reduction of the consumption, the detection condition of the suitable spectrometer 2 d can be configured determining the detection condition described above from the detected value from the Si photodetector 1 d in the light sensing system 10 d.
With respect to the substance having an absorption peak specific to red by using the light sensing system 10 d, an example of detecting the substance state change by using the penetration of light is illustrated below.
The light intensity of the red to infrared wavelength range that is detected by the Si photodetector 1 d changes. The sensor operation determining section 32 d starts the detection of the spectrometer 2 d. The user can analyze whether the changes of the light intensity in a red to infrared wavelength range by checking the spectrum in 600 nm to 750 nm from the detected value from the spectrometer 2 d are derived from a shift of the absorption peak or a change of an absorption amount.
For example, with respect to the target that detects the change of the substance state, if the substance having an absorption peak specific to read is metal fine particles, a change of a plasmon absorption peak can be known, and thus an optical constant change near the metal fine particles or form changes of the metal fine particles can be detected. Accordingly, a gas sensor or a liquid senor using a plasmon absorption peak is obtained. That is, the substance that generates the optical constant changes near the metal fine particles or the form changes of the metal fine particles is a target for detecting changes of the substance state and the detection purpose is to obtain information on the concentration of gas or liquid. The same applied to a substance having a specific light emission peak in red. At this point, if the emitted light is fluorescent, the detection of the spectrometer 2 d is started, a spectrum at 300 nm to 750 nm is measured, and a relative ratio between intensity of an excitation wavelength and intensity of a fluorescent wavelength can be analyzed.
The spectrometer 2 d may be substituted with a Si photodetector that can detect light in a red to infrared wavelength range (for example, 600 nm to 1,100 nm) by substituting the Si photodetector 1 d to a spectrometer that can detect light in an ultraviolet to infrared region wavelength range (for example, in 300 nm to 1,100 nm).
The spectrometer 2 d may be substituted with a spectrometer that can detect light in an ultraviolet to infrared wavelength range (for example, 300 nm to 1,100 nm) by substituting the Si photodetector 1 d to a Si photodetector that can detect light in a red to infrared wavelength range (for example, 600 nm to 1,100 nm). In this case, according to the detected value from one detector, the sensor operation determining section 32 d determines a detection operation of the other detector.
The light sensing system 10 d may be mounted on a system that detects gas from a leaf of a plant, a system that detects components of a liquid fertilizer, a system that detects fluorescence of a leaf, and the like.
For example, in a case of detecting slight changes such as a growth state or a moisture amount of a leaf, all the detectors included in the light sensing system do not have to always perform detection. Therefore, it is effective to apply light sensing system 10 d according to the embodiment.
In this embodiment, the light sensing system that detects light intensity is exemplified, but may be a sensing system, for example, for other continuous physical parameters (detection targets) such as vibration, sounds, radiation, and electron energy.

MODIFICATION EXAMPLE 1

In this modification example, the first detector is the spectrometer 2 d that can detect light in an ultraviolet to infrared region wavelength range (for example, 300 nm to 1,000 nm) and the second detector is the Si photodetector 1 d that can detect light in a red to infrared wavelength range (for example, 600 nm to 1,100 nm). This modification example corresponds to a system that determines an operation of the first detector based on the second detection result.
The modification example of the flow of the data process performed by the controller 3 d is described by using FIG. 16(b). FIG. 16(b) is a flow chart illustrating a flow of data processes performed by the controller 3 d according to this modification example.
In this modification example, the Si photodetector 1 d and the spectrometer 2 d start operations together by the user starting an operation of the light sensing system 10 d.
The sensor operation determining section 32 d illustrated in FIG. 16(b) monitors the detected value from the spectrometer 2 d at a prescribed time interval and determines whether the detected value from the spectrometer 2 d is changed (Step S71).
In a case where the sensor operation determining section 32 d determines that the detected value from the spectrometer 2 d is changed (YES in Step S71), the sensor operation determining section 32 d determines the change amount of the detected value from the Si photodetector 1 d is within the prescribed value (Step S72).
In a case where it is determined that the change amount of the detected value from the Si photodetector 1 d is within a prescribed value (YES in Step S72), the sensor operation determining section 32 d instructs the Si photodetector 1 d to stop (end) detection (Step S73).
In a case where the sensor operation determining section 32 d determines that the detected value from the spectrometer 2 d is not changed or in a case where the sensor operation determining section 32 d determines that the change amount of the detected value from the Si photodetector 1 d is not within the prescribed value (NO in Step S71 or S72), the calculating section 34 d calculates a spectrum of 300 nm to 1,000 nm and the light intensity of 1,000 nm to 1,100 nm from the detection results of the Si photodetector 1 d and the spectrometer 2 d (Step S74). Thereafter, the process proceeds to Step S71.
According to the configuration, time for stopping the detection of the Si photodetector 1 d can be provided. Therefore, the power consumption of the light sensing system 10 d can be reduced.

MODIFICATION EXAMPLE 2

Subsequently, a modification example of a flow of the data process performed by the controller 3 d is described by using FIG. 16(c). FIG. 16(c) is a flow chart illustrating a flow of data processes performed by the controller 3 d according to this modification example.
In this modification example, the Si photodetector 1 d and the spectrometer 2 d start operations together by the user starting an operation of the light sensing system 10 d.
As illustrated in FIG. 16(c), the sensor operation determining section 32 d monitors the detected value from the spectrometer 2 d at a prescribed time interval and determines whether the detected value from the spectrometer 2 d is changed (Step S71).
In a case where the sensor operation determining section 32 d determines that the detected value from the spectrometer 2 d is changed (YES in Step S71), the calculating section 34 d calculates an integral value of a change amount (Step S75).
Subsequently, the sensor operation determining section 32 d determines that the change amount of the detected value from the Si photodetector 1 d is the same as the integral value of the change amount of the spectrometer 2 d calculated by the calculating section 34 d (Step S76). In a case where it is determined that the change amount of the detected value from the Si photodetector 1 d is the same as the change amount and the integral value of the spectrometer 2 d calculated by the calculating section 34 d (YES in Step S76), the sensor operation determining section 32 d instructs the spectrometer 2 d to stop (end) the detection (Step S77).
Until the sensor operation determining section 32 d monitors the detected value from the spectrometer 2 d, the detected value acquiring section 31 d acquires the detected value only from the Si photodetector 1 d (Step S78). Thereafter, the process proceeds to Step S71.
In a case where the sensor operation determining section 32 d determines that the detected value from the spectrometer 2 d is not changed or in a case where the sensor operation determining section 32 d determines that the change amount of the detected value from the Si photodetector 1 d is not the same as the change amount and the integral value of the spectrometer 2 d calculated by the calculating section 34 d (NO in Step S71 or S72), the calculating section 34 d calculates a spectrum of 300 nm to 1,000 nm and light intensity of 1,000 nm to 1,100 nm from the detection results of the Si photodetector 1 d and the spectrometer 1 d (Step S79). Thereafter, the process proceeds to Step S71.
The data process described in this modification example may have a configuration of receiving a data process ending instruction from the user and ending the data process.
According to the configuration, when it is determined that the Si photodetector 1 d and the spectrometer 2 d measure changes of the common detection targets, time at which the detection by the spectrometer 2 d is stopped can be provided. Therefore, the power consumption of the light sensing system 10 d can be reduced.

Embodiment 5

The embodiment according to the invention is described below based on FIGS. 17 and 18. For convenience of explanation, members having the same functions as members described in the embodiment are denoted by the same reference numerals, and the descriptions thereof are omitted.
The sensing system according to the embodiment is a light sensing system 10 e (the sensing system 10) of which the detection purpose is to obtain information on existence or a state of a substance from the penetration, reflection, absorption, diffusion, light emission spectrum of light.
An example of the external appearance of the light sensing system 10 e is the same as the light sensing system 10 d described in Embodiment 4. Accordingly, the descriptions thereof are omitted.
(Main Configurations of Light Sensing System 10 e)
Subsequently, main configurations of the light sensing system 10 e according to the embodiment are described with reference to FIG. 17. FIG. 17 is a functional block diagram schematically illustrating a configuration of the light sensing system 10 e. As illustrated in FIG. 17, the light sensing system 10 e include a first Si photodetector le (first detector), a second Si photodetector 2 e (second detector), a controller 3 e, a display section 4 e, and a storage section 5 e.
(First Si Photodetector 1 e)
The first Si photodetector 1 e detect light in a red to infrared wavelength range (for example, 600 nm to 1,000 nm) as a detection target. The first Si photodetector 1 e sends the detected value to the controller 3 e.
(Second Si photodetector 2 e)
The second Si photodetector 2 e detects light in a specific wavelength range (for example, 600 nm to 700 nm) as a detection target. The second Si photodetector 2 e sends the detected value to the controller 3 e. For example, the second Si photodetector 2 e is a configuration including a band pass filter that transmits only light in a specific wavelength range.
Here, the detection target of the first Si photodetector 1 e and the detection target of the second Si photodetector 2 e are detection targets included in the first concept which is the light intensity. The detection target common to the first Si photodetector 1 e and the second Si photodetector 2 e is light intensity at a wavelength of 600 nm to 700 nm included in the subordinate concept of the first concept.
The first Si photodetector 1 e is set as a Si photodetector with a band pass filter and may be the second Si photodetector 2 e.
(Controller 3 e)
The controller 3 e includes a detected value acquiring section 31 e, a sensor operation determining section 32 e, a display controller 33 e, and a calculating section 34 e.
The detected value acquiring section 31 e receives the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e and sends the detected values to the sensor operation determining section 32 e, the display controller 33 e, the calculating section 34 e, and the storage section 5 e.
The sensor operation determining section 32 e determines the detected values from the first Si photodetector 1 e and/or the second Si photodetector 2 e and controls the detection operations of the first Si photodetector 1 e or the second Si photodetector 2 e.
The control of the detection operation is described in “flow of processes of controller 3 e” is specifically described.
The display controller 33 e receives the detected value from the first Si photodetector 1 e or the second Si photodetector 2 e from the detected value acquiring section 31 e or the light intensity calculated by the calculated section 34 e and instructs the display section 4 e to display the detected value and the light intensity in respective wavelength regions on the display section 4 e.
If the detected value is disclosed to the user, the user can check whether the light sensing system 10 e normally functions. The user can manipulate the control condition such as sensitivity of the respective photodetectors based on the display data by adjusting a circuit constant relating to the first Si photodetector 1 e and/or the second Si photodetector 2 e.
The display controller 33 e may perform instruction such that the light intensity calculated from the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e to be displayed. A growth state and a moisture amount of a leaf and the like determined from the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e may be displayed.
The calculating section 34 e calculates the detected values of the light intensity in a wavelength of 700 to 1,000 nm from the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e. The calculated value is sent to the display controller 33 e and the storage section 5 e.
The calculating section 34 e may exclude a detected values (600 to 700 nm) of the detection target common to both of the first Si photodetector 1 e and the second Si photodetector 2 e from the detected values from the first Si photodetector 1 e and set a detected value (detected value of 700 to 1,000 nm) of the detection target, which is not common to the second Si photodetector 2 e, of the first Si photodetector 1 e as the detected value from the first Si photodetector 1 e.
A calculation method described in the calculation of the detected value of ethanol from the calculating section 34 a described in Embodiment 1 can be applied to the calculation of the detected values of the light intensity in a wavelength of 700 to 1,000 nm. The detected value of the light intensity and the light intensity in a wavelength of 700 to 1,000 nm may be calculated, for example, by substituting the detected value from the hygrometer 1 a in the calculation of the detected value of ethanol in Embodiment 1 to the detected value from the second Si photodetector 2 e and substituting the detected value from the semiconductor gas sensor 2 a in Embodiment 1 to the detected value from the first Si photodetector 1 e.
The storage section 5 e stores the correction formula, the correction factor, and the graph used by the calculating section 34 e in calculation. The storage section 5 e stores the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e, and the like. The storage section 5 e stores the control program executed by the controller 3 e.
(Flow of Processes of Controller 3 e)
Subsequently, the flow of the data processes performed by the controller 3 e is described by using FIG. 18. FIG. 18 is a flow chart illustrating a flow of data processes performed by the controller 3 e according to the embodiment.
The detected value acquiring section 31 e receives the detected value from the first Si photodetector 1 e and sends the detected value to the sensor operation determining section 32 e. The sensor operation determining section 32 e determines that the detected value from the first Si photodetector 1 e is changed (Step S81).
For example, in the determination, in a case where the change amount of the detected value from the first Si photodetector 1 e for each prescribed time is changed two times or greater or in a case where the detected value from the first Si photodetector 1 e at the time of detection start is changed by 10% or greater, it is possible to determine that the detected value from the first Si photodetector 1 e is changed.
In a case where the sensor operation determining section 32 e determines that the detected value from the first Si photodetector 1 e is changed (YES in Step S81), the sensor operation determining section 32 e instructs the second Si photodetector 2 e to start the detection (Step S82).
If the detected value acquiring section 31 e receives the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e, the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e are sent to the calculating section 34 e. The calculating section 34 e calculates the light intensity in a wavelength of 700 to 1,000 nm from the detected values from the first Si photodetector 1 e and the second Si photodetector 2 e (Step S83).
The sensor operation determining section 32 e monitors the detected value from the first Si photodetector 1 e at a prescribed time interval and determines whether the change amount of the detected value from the first Si photodetector 1 e is within the prescribed value (Step S84).
In a case where the sensor operation determining section 32 e determines that the change amount of the detected value from the first Si photodetector 1 e is within the prescribed value (YES in Step S84), the sensor operation determining section 32 e instructs the second Si photodetector 2 e to stop (end) the detection.
In a case where the sensor operation determining section 32 e does not determine that the detected value from the first Si photodetector 1 e is changed (in a case of NO in Step S81), the detected value acquiring section 31 e receives the detected value from the first Si photodetector 1 e and the process proceeds to Step S81.
In a case where the sensor operation determining section 32 e determines that the change amount of the detected value from the first Si photodetector 1 e is within the prescribed value (NO in Step S84), the process proceeds to Step S83.
In the configuration above, in a case where it is determined that the detected value from the first Si photodetector 1 e is changed, the detection of the second Si photodetector 2 e starts.
The change of the detected value from the first Si photodetector 1 e occurs due to penetration, reflection, absorption, diffusion, and emission of light in a specific wavelength in the detection target of the first Si photodetector 1 e with respect to the substance. That is, the configuration of this embodiment is a configuration in which the detection of the second Si photodetector 2 e starts, when the light in a specific wavelength in the detection target of the first Si photodetector 1 e becomes in a state of penetration (a state of reflection, absorption, diffusion, or emission is possible).
If the detection of the second Si photodetector 2 e starts, the second Si photodetector 2 e detects only light in a limited wavelength range (600 nm to 700 nm) among light being the detection targets (600 nm to 1,000 nm) of the first Si photodetector 1 e. Therefore, it is possible to determine that whether the change of the detected values from the first Si photodetector 1 e is the detection target of the second Si photodetector 2 e or a change of another detection target. That is, the light sensing system 10 e can independently (selectively) detect the light intensity in 600 nm to 700 nm and in 700 nm to 1,000 nm.
The light sensing system 10 e can approximately determine a phenomenon that occurs in a substance of an observation target with a simple configuration including two Si photodetectors and a band pass filter. A detection target which is common to both of the detection target of the first Si photodetector 1 e and the detection target of the second Si photodetector 2 e exists (the detection target of the second Si photodetector 2 e is included in the detection target of the first Si photodetector 1 e). Therefore, it is not required to always operate the second Si photodetector 2 e and thus it is possible to increase the life span and reduce the power consumption of the light sensing system 10 e.
For example, the sensor operation determining section 32 e starts the detection operation of the second Si photodetector 2 e according to the detected value from the first Si photodetector 1 e. Thereafter, in a case where the sensor operation determining section 32 e determines that the change of the detected value from the first Si photodetector 1 e changes according to the change of the detected value from the second Si photodetector 2 e (there is no change in the detection targets other than the detection target of the second Si photodetector 2 e), the sensor operation determining section 32 e may instruct the first Si photodetector 1 e to stop the detection.
According to the configuration, time at which the detection of the first Si photodetector 1 e is stopped can be provided. Therefore, the power consumption of the light sensing system 10 e can be reduced.
The light sensing system 10 e can be used for the detection of a change in a state of a substance of which penetration, reflection, and absorption peaks with respect to light at a wavelength of 600 nm to 700 nm are changed by a specific phenomenon. That is, it the detected value from the first Si photodetector 1 e changes (the light intensity in a red to infrared wavelength range changes), the sensor operation determining section 32 e starts the detection by the second Si photodetector 2 e. Therefore, it is possible to analyze whether the change of the detected value from the first photodetector 1 e is a change of the light intensity in 600 nm to 700 nm. Accordingly, the light sensing system 10 e can be used for obtaining information on a change in a state of a substance of which penetration, reflection, and an absorption peak with respect to light in a wavelength of 600 nm to 700 nm are changed due to a specific phenomenon.
Here, obtaining the information on the change of the state of the substance of which the penetration, reflection, and an absorption peak with respect to the light in a wavelength of 600 nm to 700 nm due to specific phenomenon by using the light sensing system 10 e is specifically described.
For example, the specific phenomenon is decomposition of chlorophyll which is a dye of a chloroplast of a plant and the detection purpose thereof is to obtain information on the change of the state of the leaf.
The first Si photodetector 1 e always detects light in a red to infrared wavelength range (600 nm to 1,000 nm). If the detected value from the first Si photodetector 1 e increases or decreases by a prescribed value or greater, the sensor operation determining section 32 e starts the detection of the second Si photodetector 2 e. The second Si photodetector 2 e detects the light intensity of a limited wavelength range (600 nm to 700 nm) among light being the detection targets (600 nm to 1,000 nm) of the first Si photodetector 1 e.
Accordingly, from the detected value from the second Si photodetector 2 e, the user can determine whether the change of the detected value from the first Si photodetector 1 e is the change of the light intensity in a wavelength of 600 nm to 700 nm which have one absorption peak of chlorophyll or a change in other light intensity in a wavelength of 600 nm to 700 nm (for example, the change of fluorescence in a wavelength region of the detection target of the first Si photodetector 1 e and the decrease of absorption in an infrared range caused by the deficiency of the moisture amount in the leaf). For example, the calculating section 34 e compares the intensity change of 600 nm to 700 nm and the intensity change of 600 nm to 1,000 nm so as to perform this determination based on the corresponding comparison. This determination may be performed by the calculating section 34 e, but the invention is not limited thereto.
It is possible to detect temporal changes of the detected value from the first Si photodetector 1 e and the detected value from the second Si photodetector 2 e by simultaneously detecting the first Si photodetector 1 e and the second Si photodetector 2 e.
In this embodiment, the second Si photodetector 2 e is set as a Si photodetector with a band pass filter but the second Si photodetector 2 e may be another type of detector having higher sensitivity than the first Si photodetector 1 e. In this case, a detector having high sensitivity generally has a low detection limit, and thus if the detection operation is always performed, it is concerned that the detector breaks due to an input exceeding the detection limit. If the sensor operation determining section 32 e starts the detection of the second detector from the detected value from the first Si photodetector 1 e, the concern can be reduced.
The sensor operation determining section 32 e may have a configuration of determining the detection condition of the second Si photodetector 2 e from the detected value from the first Si photodetector 1 e. In this case, the corresponding detection condition may influence on the detection sensitivity on the detection target of the second Si photodetector 2 e, the life span of the second Si photodetector 2 e, the power consumption of the second Si photodetector 2 e, and the like. In view of the detection sensitivity with respect to the detection target of the second Si photodetector 2 e, the life span of the second Si photodetector 2 e, the period of time until the refreshment of the second Si photodetector 2 e, and the power consumption of the second Si photodetector 2 e, the sensor operation determining section 32 e may configure the suitable detection condition of the second Si photodetector 2 e.
The light sensing system 10 e may be mounted on a system that detects gas from a leaf of a plant, a system that detects components of a liquid fertilizer, a system that detects fluorescence of a leaf, and the like.
For example, in a case of detecting slight changes such as a growth state or a moisture amount of a leaf, all the detectors included in the light sensing system do not have to always perform detection. Therefore, it is effective to apply the light sensing system 10 e according to the embodiment.
In this embodiment, the light sensing system that detects light intensity is exemplified, but may be a sensing system, for example, for other continuous physical parameters (detection targets) such as vibration, sounds, radiation, and electron energy.
[Realization Example of Software]
Control blocks 3 a to 3 e of the sensing systems 10 a to 10 e may be realized by a logical circuit (hardware) formed with an integrated circuit (IC chip), and the like or may be realized by software by using a central processing unit (CPU).
In the case of the latter, the sensing systems 10 a to 10 e each include a CPU that executes instructions of programs that are software realizing respective functions, a read only memory (ROM) or a storage device (also referred to as a “recording medium”) in which the programs and respective types of data are recorded readable by computer (or CPU), a random access memory (RAM) in which the programs are developed, and the like. Also, if the computer (or CPU) executes reading the programs from the recording medium, the purpose of the invention is achieved. As the recording medium, a “medium that is not temporary”, for example, a tape, a disc, a card, a semiconductor memory, and a programmable logical circuit can be used. The programs may be supplied to the computer via an arbitrary transmission medium (communication networks, broadcast waves, and the like) that can transmit the programs. The invention may be realized in a form of data signals embedded in carrier waves in which the programs are realized by electronic transmission.
[Additional Notes]
The invention can be presented as follows.
A sensing system includes: a first detector that detects a first detection target; a second detector that detects a second detection target; and a controller that controls start or stop of detection operations of the first detector and the second detector, the first detection target and the second detection target are detection targets included in a first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and is included in a subordinate concept of the first concept, and, according to the detected value from any one detector of the first detector and the second detector, the controller controls start, stop, or a detection condition of the detection operation of the other detector.
A sensing system in which, in a case where the first detection target only includes a detection target common to the second detection target and the second detection target includes a detection target other than the common detection target, the controller controls start or stop of a detection operation by the second detector according to the detected value of the common detection target included in the first detection target detected by the first detector.
A sensing system in which, in a case where the first detection target includes a detection target other than the detection target common to the second detection target and the second detection target includes only the common detection target, the controller controls starting or stop of the detection operation by the second detector according to the detected value of the first detection target detected by the first detector.
A sensing system, in which, in a case where all the detection targets included in the first detection target and the second detection target are the same, the controller performs control such that detected temperatures of the first detector and the second detector are different from each other.

CONCLUSION

According to a sensing system (the sensing system 10, the alcohol detecting system 10 a, the air quality monitoring system 10 b, the gas sensing system 10 c, the light sensing system 10 d, or the light sensing system 10 e) of a first aspect of the invention includes a first detector (the first detector 1, the hygrometer 1 a, the semiconductor gas sensor 1 b, the first semiconductor gas sensor 1 c, the Si photodetector 1 d, or the first Si photodetector 1 e) that detects a first detection target; a second detector (the second detector 2, the semiconductor gas sensor 2 a, the light absorbance-type gas sensor 2 b, the second semiconductor gas sensor 2 c, the spectrometer 2 d, or the second Si photodetector 2 e) that detects a second detection target; and a controller (the controller 3, the controllers 3 a to 3 e, or the sensor operation determining sections 32 a to 32 e) that controls start or stop of detection operations of the first detector and the second detector, in which the first detection target and the second detection target are detection targets included in a first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and is included in a subordinate concept of the first concept, and, according to the detected value from any one detector of the first detector and the second detector, the controller controls start, stop, or a detection condition of the detection operation of the other detector.
In the configuration, according to the detected value from any one detector of the first detector and the second detector, the controller controls starting, stopping, or detection conditions of a detection operation of the other detector. For example, in the configuration of controlling start or stop of the detection operation of the other detector according to the detected value from one detector, all the detector do not have to always perform detection. Accordingly, it is possible to suppress the consumption generated according to the detection time of the respective detectors. That is, the sensing system of the sensing system can be increased.
The first detection target and the second detection target are detection targets included in a first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and is included in a subordinate concept of the first concept. Each of the detectors can obtain a detection result of each other according to the at least one type of detection target which is common to both of the first detection target and the second detection target and which is included in a subordinate concept of the first concept.
In the configuration in which, according to the detected value from one detector, the detection condition of the detection operation of the other detector is controlled, for example, the detector of which the detection condition is controlled is a semiconductor film-type gas sensor. According to the control of the detection condition, in a case where the detected temperature is set to be low, a reaction film of the semiconductor film-type gas sensor hardly degraded, compared with the configuration in which the detected temperature is set to as a high temperature. Therefore, the life span of the sensing system can be increased.
According to a sensing system of a second aspect of the invention, in the first aspect, a calculating section (the calculating sections 34 a to 34 e) is further included, and the calculating section may exclude a detected value of the detection target which is common to the both from the detected values of the detection targets of the one detector and may set a detected value of the detection target, which is not common to the other detected value, of the one detector, as the detected value of the one detector.
According to the configuration, the calculating section calculates the detected value of the detection target, which is not common to the other detector, of the one detector.
Accordingly, in the detection target of the one detector, the detected value of the detection target, which is not common to the other detector, of the one detector can be selectively calculated.
According to a sensing system (the alcohol detecting system 10 a) of a third aspect of the invention, in the first aspect,
according to a detected value of any one detector of the first detector and the second detector, the controller (the controller 3 a or the sensor operation determining section 32 a) controls a detection condition of a detection operation of the other detector, the first or second detector is a semiconductor film-type gas sensor (the semiconductor gas sensor 1 b), and the controller (the controller 3 a or the sensor operation determining section 32 a) may control a temperature of a reaction film of the semiconductor film-type gas sensor and may perform control such that the semiconductor film-type gas sensor does not detect at least one type of detection target which is common to the both and is included in a subordinate concept of the first concept.
According to the configuration, the controller, by controlling the temperature of the reaction film of the semiconductor film-type gas sensor, performs control such that the at least one type of detection target which is common to the both and is included in the subordinate concept of the first concept is not detected.
Accordingly, one detector can detect a detection target except for at least one type of detection target which is common to the both and is included in the subordinate concept of the first concept.
According to the sensing system (the alcohol detecting system 10 a, the air quality monitoring system 10 b, the light sensing system 10 d) of a fourth aspect of the invention, in the first to third aspects, a detection principle of the first detector (the hygrometer 1 a, the semiconductor gas sensor 1 b, or the Si photodetector 1 d) and a detection principle of the second detector (semiconductor gas sensor 2 a, the light absorbance-type gas sensor 2 b, and the spectrometer 2 d) are different from each other.
According to the configuration, start or stop (end) of detection of a detector having performances of hard refreshment, high running cost, and being wasted, high power consumption can be controlled according to the detected value from the other detector.
Accordingly, the detector of which the start or stop (end) is controlled is not required to always perform detection.
Accordingly, according to the configuration, it is possible to realize a sensing system having low power consumption, low cost, and a long life span.
According to a sensing system (the gas sensing system 10 c and the light sensing system 10 e) of a fifth aspect of the invention, in the first to third aspects, a detection principle of the first detector (the first semiconductor gas sensor 1 c or the first Si photodetector 1 e) and a detection principle of the second detector (the second semiconductor gas sensor 2 c or the second Si photodetector 2 e) are the same and detection conditions of the first detector and the second detector are different from each other.
According to the configuration, the two detectors have the same detection principle. Therefore, since the control method of each of the detectors is common, it is possible to reduce process amounts of control processes of the two detectors.
For example, in a case where two semiconductor film-type gas sensors having the same detection principles are respectively have different types of reaction films, start or end of the detection of the detector including a reaction film that is hardly refreshed can be controlled according to the detected value from the other detector. Accordingly, it is possible to start the detection of the detector including a reaction film that is hardly refreshed, only when necessary.
Accordingly, if the detector is not operated, the detection target does not react with the reaction film, and thus it is possible to cause the saturation of the reaction between the detection target and the reaction film of the detector to be slow.
Accordingly, it is possible to suppress the number of refreshment of the reaction film performed at the time of the corresponding saturation state. Since the temperature of the reaction film is generally increased in order to refresh the reaction film, it is possible to achieve a long life span of the detector of the sensing system by suppressing the number of refreshment and preventing the degradation of the reaction film.
The sensing system according to the respective aspects of the invention may be realized by a computer. In this case, a control program of the sensing system that realizes the sensing system with the computer by causing the computer to be operated as respective sections included in the sensing system and a computer readable recording medium in which the control program is stored are included in the invention.
The invention is not limited to the respective embodiments, and various changes can be made within the scope recited in the claims, and embodiments that can be obtained by appropriately combining technical means respectively disclosed in other embodiments are also included in the technical scope of the invention. It is possible to form new technical features by combining technical means described in the respective embodiments.

INDUSTRIAL APPLICABILITY

The invention can be used in a sensing system.

REFERENCE SIGNS LIST

1 first detector
1 a hygrometer (first detector)
1 b semiconductor gas sensor (first detector)
1 c first semiconductor gas sensor (first detector)
1 d Si photodetector (first detector)
1 e first Si photodetector (first detector)
2 second detector
2 a semiconductor gas sensor (second detector)
2 b gas sensor (second detector)
2 b light absorbance-type gas sensor (second detector)
2 c second semiconductor gas sensor (second detector)
2 d spectrometer (second detector)
2 e second Si photodetector (second detector)
3, 3 a to 3 e controller
10 sensing system
10 a alcohol detecting system (sensing system)
10 b air quality monitoring system (sensing system)
10 c gas sensing system (sensing system)
10 d light sensing system (sensing system)
10 e light sensing system (sensing system)
32 a to 32 e sensor operation determining section (controller)
34 a to 34 e calculating section

Claims

1. A sensing system comprising:

a first detector that detects a first detection target;

a second detector that detects a second detection target; and

a controller that controls start or stop of detection operations of the first detector and the second detector,

wherein the first detection target and the second detection target are detection targets included in a first concept and include at least one type of detection target which is common to both of the first detection target and the second detection target and is included in a subordinate concept of the first concept, and

wherein, according to a detected value from any one detector of the first detector and the second detector, the controller controls start, stop, or a detection condition of the detection operation of the other detector.

2. The sensing system according to claim 1,

wherein the controller includes a calculating section, and

wherein the calculating section excludes a detected value of the detection target which is common to the both from detected values of the detection targets of the one detector and sets a detected value of the detection target, which is not common to the other detector, of the one detector, as the detected value of the one detector.

3. The sensing system according to claim 1,

wherein, according to a detected value of any one detector of the first detector and the second detector, the controller controls a detection condition of a detection operation of the other detector,

wherein the first detector or the second detector is a semiconductor film-type gas sensor,

wherein the controller controls start of the detection of the first detector or the second detector, and

wherein the controller, by controlling a temperature of a reaction film of the semiconductor film-type gas sensor, performs control so that the semiconductor film-type gas sensor does not detect at least one type of detection target which is common to the both and is included in the subordinate concept of the first concept.

4. The sensing system according to claim 1,

wherein a detection principle of the first detector and a detection principle of the second detector are different from each other.

5. The sensing system according to claim 1,

wherein a detection principle of the first detector and a detection principle of the second detector are the same and detection conditions of the first detector and the second detector are different from each other.