US20120264359A1 - Membrane - Google Patents
Membrane Download PDFInfo
- Publication number
- US20120264359A1 US20120264359A1 US13/085,489 US201113085489A US2012264359A1 US 20120264359 A1 US20120264359 A1 US 20120264359A1 US 201113085489 A US201113085489 A US 201113085489A US 2012264359 A1 US2012264359 A1 US 2012264359A1
- Authority
- US
- United States
- Prior art keywords
- membrane
- included angle
- polishing
- polishing pad
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 46
- 238000005498 polishing Methods 0.000 claims abstract description 67
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Definitions
- the disclosure is related to a membrane, and in particular to a membrane suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus.
- the planarization of the chip then depends on the chemical mechanical polishing (CMP) process.
- CMP chemical mechanical polishing
- the unique anisotropic polishing property of the CMP process is not only used for the planarization of the surface contour of the chip, but can also be applied in the fabrication of damascene structures of perpendicular and horizontal metal interconnections, the fabrication of shallow trench isolations in devices and the fabrication of advanced devices in the previous stage, and the fabrication of micro-electromechanical system planarization and the fabrication of flat displays, etc.
- the CMP process mainly utilizes a reagent in the polishing slurry for generating a chemical reaction on the front side of the wafer to form a polishable layer. Further, with the wafer on the polishing pad, the protruding portions of the polishable layer are polished off by the mechanical polishing with the facilitation of abrasive particles in the polishing slurry. The chemical reactions and the mechanical polishing are then repeated to form a planar surface.
- the disclosure provides a membrane which effectively solves problems of non-uniform polishing rates.
- the disclosure provides a membrane, suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus.
- the membrane comprises a main portion and an edge portion.
- the edge portion is located at an edge of the main portion, wherein a first included angle between the main portion and the edge portion is an obtuse angle.
- a frame of the polishing head includes a frame main body and a retainer ring, the membrane is mounted on the frame main body, and the retainer ring surrounds and is connected to the frame main body, when the retainer ring presses against a polishing pad, the polishing pad in the retainer ring forms a protruding portion, a second included angle is formed between a planar portion of the polishing pad and the protruding portion, and the first included angle is, for example, substantially equal to the second included angle.
- an area within which the edge portion of the membrane operates is, for example, substantially equal to the area within which the protruding portion of the polishing pad is located.
- the second included angle is, for example, 90 degrees to 180 degrees.
- the first included angle is, for example, 90 degrees to 180 degrees.
- a material of the membrane is, for example, rubber.
- the main portion and the edge portion are, for example, integrally formed.
- the included angle between the main portion and the edge portion is an obtuse angle, pressure caused by the protruding portion of the polishing pad pressing against an edge of a substrate is effectively pre-released, thereby increasing uniformity of polishing rates at each position of the substrate, so that the substrate has better surface planarity after being polished.
- FIG. 1 is a sectional axonometric drawing of a membrane according to an embodiment of the disclosure.
- FIG. 2 is a schematic view of the membrane in FIG. 1 mounted on a polishing head of a chemical mechanical polishing apparatus.
- FIG. 1 is a sectional axonometric drawing of a membrane according to an embodiment of the disclosure.
- a membrane 100 is suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus.
- the membrane 100 includes a main portion 102 and an edge portion 104 .
- the edge portion 104 is located at an edge of the main portion 102 .
- a material of the membrane 100 is, for example, rubber.
- the main portion 102 and the edge portion 104 are, for example, integrally formed.
- a first included angle ⁇ 1 between the main portion 102 and the edge portion 104 is an obtuse angle.
- the first included angle ⁇ 1 is designed as an obtuse angle so that the edge portion 104 of the membrane 100 tilts upward, forming an object-containing space S between the edge portion 104 and an extending line EL of the main portion 102 .
- the first included angle ⁇ 1 is defined as an included angle between a longitudinal extending direction L 1 of the main portion 102 and a longitudinal extending direction L 2 of the edge portion 104 .
- the longitudinal extending direction L 1 and the longitudinal extending direction L 2 respectively represent overall extending directions of the main portion 102 and the edge portion 104 .
- the first included angle is, for example, from 90 degrees to 180 degrees.
- the object-containing space S is formed between the edge portion 104 and the extending line EL of the main portion 102 .
- the object-containing space S is able to contain a protrusion caused by deformation of a polishing pad, so that the membrane 100 effectively pre-releases the pressure caused by a protruding portion of the polishing pad pressing against an edge of a substrate.
- FIG. 2 is a schematic view of the membrane in FIG. 1 mounted on a polishing head of a chemical mechanical polishing apparatus.
- a frame 204 of a polishing head 202 includes a frame main body 206 and a retainer ring 208 , and the retainer ring 208 surrounds and is connected to the frame main body 206 .
- the membrane 100 is mounted on the frame main body 206 of the polishing head 202 . Designs, materials, and functions of the membrane 100 have been described in detail in the embodiment shown in FIG. 1 and are hence not repeatedly described.
- a substrate for polishing is, for example, a wafer W.
- the polishing head 202 is used to place the wafer W on the polishing pad 210 .
- the retainer ring 208 presses against the polishing pad 210 , causing the polishing pad 210 in the retainer ring 208 to form a protruding portion 212 . Therefore, a second included angle ⁇ 2 is formed between a planar portion 214 and the protruding portion 212 of the polishing pad 210 , and the second included angle ⁇ 2 is an obtuse angle.
- the first included angle ⁇ 1 is substantially equal to the second included angle ⁇ 2 , for example.
- the second included angle ⁇ 2 is defined as an included angle between a longitudinal extending direction L 3 of the planar portion 214 and a longitudinal extending direction L 4 of the protruding portion 212 in FIG. 2 .
- the longitudinal extending direction L 3 and the longitudinal extending direction L 4 respectively represent overall extending directions of the planar portion 214 and the protruding portion 212 .
- the second included angle ⁇ 2 is, for example, from 90 degrees to 180 degrees.
- An area within which the edge portion 104 of the membrane 100 operates is substantially equal to the area within which the protruding portion 212 of the polishing pad 210 is located, for example.
- the first included angle ⁇ 1 of the membrane 100 and an area within which the edge portion 104 of the membrane 100 operates are, for example, designed according to the second included angle ⁇ 2 of the polishing pad 210 and according to the area within which the protruding portion 212 of the polishing pad 210 is located.
- the object-containing space S is formed between the edge portion 104 and the extending line EL of the main portion 102 .
- the object-containing space S below the edge portion 104 of the membrane 100 is capable of containing the deformed portion of the wafer W caused by pressure from the protruding portion 212 , thereby pre-releasing the pressure caused by the protrusion portion 212 of the polishing pad 210 pressing against the edge of the wafer W. Therefore, uniformity of polishing rates at each position of the wafer is increased, so that the wafer W has better surface planarity after being polished.
- the membrane according to the above embodiment has at least the following features:
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A membrane is suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus and includes a main portion and an edge portion. The edge portion is located at an edge of the main portion, wherein a first included angle between the main portion and the edge portion is an obtuse angle.
Description
- 1. Field of the Invention
- The disclosure is related to a membrane, and in particular to a membrane suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus.
- 2. Description of Related Art
- Because the resolution of photolithography exposure increases along with the decrease in device size and the depth of field at exposure is reduced, the requirement to planarity of chip surface increases drastically. Thus, when performing the deep sub-micron process, the planarization of the chip then depends on the chemical mechanical polishing (CMP) process. The unique anisotropic polishing property of the CMP process is not only used for the planarization of the surface contour of the chip, but can also be applied in the fabrication of damascene structures of perpendicular and horizontal metal interconnections, the fabrication of shallow trench isolations in devices and the fabrication of advanced devices in the previous stage, and the fabrication of micro-electromechanical system planarization and the fabrication of flat displays, etc.
- The CMP process mainly utilizes a reagent in the polishing slurry for generating a chemical reaction on the front side of the wafer to form a polishable layer. Further, with the wafer on the polishing pad, the protruding portions of the polishable layer are polished off by the mechanical polishing with the facilitation of abrasive particles in the polishing slurry. The chemical reactions and the mechanical polishing are then repeated to form a planar surface.
- However, when a polishing head of a chemical mechanical polishing apparatus is placed on the polishing pad, a retainer ring of the polishing head presses against the polishing pad, causing the polishing pad to deform. When polishing the wafer, a protruding portion formed by deformation of the polishing pad exerts pressure on an edge of the wafer, making a polishing speed at the edge of the wafer too fast. The deformation of the polishing pad also causes polishing rates at some portions of the wafer to become slower. These phenomenon cause inferior planarity of the surface of the wafer after polishing.
- The disclosure provides a membrane which effectively solves problems of non-uniform polishing rates.
- The disclosure provides a membrane, suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus. The membrane comprises a main portion and an edge portion. The edge portion is located at an edge of the main portion, wherein a first included angle between the main portion and the edge portion is an obtuse angle.
- According to an embodiment of the disclosure, in the above membrane, a frame of the polishing head includes a frame main body and a retainer ring, the membrane is mounted on the frame main body, and the retainer ring surrounds and is connected to the frame main body, when the retainer ring presses against a polishing pad, the polishing pad in the retainer ring forms a protruding portion, a second included angle is formed between a planar portion of the polishing pad and the protruding portion, and the first included angle is, for example, substantially equal to the second included angle.
- According to an embodiment of the disclosure, in the above membrane, an area within which the edge portion of the membrane operates is, for example, substantially equal to the area within which the protruding portion of the polishing pad is located.
- According to an embodiment of the disclosure, in the above membrane, the second included angle is, for example, 90 degrees to 180 degrees.
- According to an embodiment of the disclosure, in the above membrane, the first included angle is, for example, 90 degrees to 180 degrees.
- According to an embodiment of the disclosure, in the above membrane, a material of the membrane is, for example, rubber.
- According to an embodiment of the disclosure, in the above membrane, the main portion and the edge portion are, for example, integrally formed.
- In light of the above, in the membrane provided by the disclosure, since the included angle between the main portion and the edge portion is an obtuse angle, pressure caused by the protruding portion of the polishing pad pressing against an edge of a substrate is effectively pre-released, thereby increasing uniformity of polishing rates at each position of the substrate, so that the substrate has better surface planarity after being polished.
- In order to make the aforementioned and other objects, features of the disclosure comprehensible, embodiments accompanied with figures are described in detail below.
- The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the disclosure and, together with the description, serve to explain the principles of the disclosure.
-
FIG. 1 is a sectional axonometric drawing of a membrane according to an embodiment of the disclosure. -
FIG. 2 is a schematic view of the membrane inFIG. 1 mounted on a polishing head of a chemical mechanical polishing apparatus. -
FIG. 1 is a sectional axonometric drawing of a membrane according to an embodiment of the disclosure. - Please refer to
FIG. 1 , amembrane 100 is suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus. Themembrane 100 includes amain portion 102 and anedge portion 104. Theedge portion 104 is located at an edge of themain portion 102. A material of themembrane 100 is, for example, rubber. Themain portion 102 and theedge portion 104 are, for example, integrally formed. - A first included angle θ1 between the
main portion 102 and theedge portion 104 is an obtuse angle. The first included angle θ1 is designed as an obtuse angle so that theedge portion 104 of themembrane 100 tilts upward, forming an object-containing space S between theedge portion 104 and an extending line EL of themain portion 102. According to the present embodiment, the first included angle θ1 is defined as an included angle between a longitudinal extending direction L1 of themain portion 102 and a longitudinal extending direction L2 of theedge portion 104. The longitudinal extending direction L1 and the longitudinal extending direction L2 respectively represent overall extending directions of themain portion 102 and theedge portion 104. The first included angle is, for example, from 90 degrees to 180 degrees. - According to the above embodiment, since the first included angle θ1 between the
main portion 102 and theedge portion 104 is designed as an obtuse angle, the object-containing space S is formed between theedge portion 104 and the extending line EL of themain portion 102. The object-containing space S is able to contain a protrusion caused by deformation of a polishing pad, so that themembrane 100 effectively pre-releases the pressure caused by a protruding portion of the polishing pad pressing against an edge of a substrate. -
FIG. 2 is a schematic view of the membrane inFIG. 1 mounted on a polishing head of a chemical mechanical polishing apparatus. - Please refer to both
FIGS. 1 and 2 . In a chemicalmechanical polishing apparatus 200, aframe 204 of apolishing head 202 includes a framemain body 206 and aretainer ring 208, and theretainer ring 208 surrounds and is connected to the framemain body 206. - The
membrane 100 is mounted on the framemain body 206 of thepolishing head 202. Designs, materials, and functions of themembrane 100 have been described in detail in the embodiment shown inFIG. 1 and are hence not repeatedly described. - According to the present embodiment, a substrate for polishing is, for example, a wafer W. When polishing the wafer W, the
polishing head 202 is used to place the wafer W on thepolishing pad 210. Theretainer ring 208 presses against thepolishing pad 210, causing thepolishing pad 210 in theretainer ring 208 to form a protrudingportion 212. Therefore, a second included angle θ2 is formed between aplanar portion 214 and theprotruding portion 212 of thepolishing pad 210, and the second included angle θ2 is an obtuse angle. The first included angle θ1 is substantially equal to the second included angle θ2, for example. According to the present embodiment, the second included angle θ2 is defined as an included angle between a longitudinal extending direction L3 of theplanar portion 214 and a longitudinal extending direction L4 of theprotruding portion 212 inFIG. 2 . The longitudinal extending direction L3 and the longitudinal extending direction L4 respectively represent overall extending directions of theplanar portion 214 and theprotruding portion 212. The second included angle θ2 is, for example, from 90 degrees to 180 degrees. An area within which theedge portion 104 of themembrane 100 operates is substantially equal to the area within which theprotruding portion 212 of thepolishing pad 210 is located, for example. According to the above, the first included angle θ1 of themembrane 100 and an area within which theedge portion 104 of themembrane 100 operates are, for example, designed according to the second included angle θ2 of thepolishing pad 210 and according to the area within which theprotruding portion 212 of thepolishing pad 210 is located. - According to the above embodiment, when the
retainer ring 208 of thepolishing head 202 presses against thepolishing pad 210 and forms theprotruding portion 212, since the included angle θ1 between themain portion 102 and theedge portion 104 of themembrane 100 is designed as an obtuse angle, the object-containing space S is formed between theedge portion 104 and the extending line EL of themain portion 102. The object-containing space S below theedge portion 104 of themembrane 100 is capable of containing the deformed portion of the wafer W caused by pressure from the protrudingportion 212, thereby pre-releasing the pressure caused by theprotrusion portion 212 of thepolishing pad 210 pressing against the edge of the wafer W. Therefore, uniformity of polishing rates at each position of the wafer is increased, so that the wafer W has better surface planarity after being polished. - In light of the above, the membrane according to the above embodiment has at least the following features:
-
- 1. The membrane according to the above embodiment effectively pre-releases the pressure caused by the protruding portion of the polishing pad pressing against the edge of the substrate.
- 2. By utilizing the membrane according to the above embodiment, uniformity of polishing rates of the wafer is increased, so that the substrate has better surface planarity after being polished.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.
Claims (7)
1. A membrane, suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus, the membrane comprising:
a main portion; and
an edge portion, located at an edge of the main portion, wherein a first included angle between the main portion and the edge portion is an obtuse angle.
2. The membrane as claimed in claim 1 , wherein a frame of the polishing head comprises a frame main body and a retainer ring, the membrane is mounted on the frame main body, and the retainer ring surrounds and is connected to the frame main body, when the retainer ring presses against a polishing pad, the polishing pad in the retainer ring forms a protruding portion, a second included angle is formed between a planar portion of the polishing pad and the protruding portion, and the first included angle is substantially equal to the second included angle.
3. The membrane as claimed in claim 2 , wherein an area within which the edge portion operates is substantially equal to the area within which the protruding portion of the polishing pad is located.
4. The membrane as claimed in claim 2 , wherein the second included angle is from 90 degrees to 180 degrees.
5. The membrane as claimed in claim 1 , wherein the first included angle is from 90 degrees to 180 degrees.
6. The membrane as claimed in claim 1 , wherein a material of the membrane comprises rubber.
7. The membrane as claimed in claim 1 , wherein the main portion and the edge portion are integrally formed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/085,489 US20120264359A1 (en) | 2011-04-13 | 2011-04-13 | Membrane |
| TW100115167A TWI442998B (en) | 2011-04-13 | 2011-04-29 | Membrane |
| CN201110144307.5A CN102729142B (en) | 2011-04-13 | 2011-05-31 | film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/085,489 US20120264359A1 (en) | 2011-04-13 | 2011-04-13 | Membrane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20120264359A1 true US20120264359A1 (en) | 2012-10-18 |
Family
ID=46985806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/085,489 Abandoned US20120264359A1 (en) | 2011-04-13 | 2011-04-13 | Membrane |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120264359A1 (en) |
| CN (1) | CN102729142B (en) |
| TW (1) | TWI442998B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117325076A (en) * | 2023-10-08 | 2024-01-02 | 杭州众硅电子科技有限公司 | Polishing device for improving edge grinding uniformity |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020094767A1 (en) * | 2000-03-27 | 2002-07-18 | Zuniga | Carrier head with multi-part flexible membrane |
| US20020173242A1 (en) * | 1999-04-19 | 2002-11-21 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
| US20020177395A1 (en) * | 2001-05-23 | 2002-11-28 | Samsung Electronics Co., Ltd. | Polishing head of a chemical and mechanical polishing apparatus for polishing a wafer |
| US20050239371A1 (en) * | 2003-09-09 | 2005-10-27 | Tetsuji Togawa | Pressure control system and polishing apparatus |
| US20050272346A1 (en) * | 2004-06-04 | 2005-12-08 | Jae-Phil Boo | Carrier head of chemical mechanical polishing apparatus having barriers dividing pressure chamber into a plurality of pressure zones |
| US6979250B2 (en) * | 2000-07-11 | 2005-12-27 | Applied Materials, Inc. | Carrier head with flexible membrane to provide controllable pressure and loading area |
| US7001245B2 (en) * | 2003-03-07 | 2006-02-21 | Applied Materials Inc. | Substrate carrier with a textured membrane |
| US20060079092A1 (en) * | 2002-04-18 | 2006-04-13 | Tetsuji Togawa | Polishing method |
| US20060199479A1 (en) * | 2003-02-10 | 2006-09-07 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US20070232209A1 (en) * | 2000-11-23 | 2007-10-04 | Samsung Electronics Co., Ltd. | Method for polishing a semiconductor wafer |
| US20070293129A1 (en) * | 2004-12-10 | 2007-12-20 | Tetsuji Togawa | Substrate Holding Device And Polishing Apparatus |
| US20080119121A1 (en) * | 2001-12-06 | 2008-05-22 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US20090142996A1 (en) * | 2007-11-29 | 2009-06-04 | Ebara Corporation | Polishing apparatus and method |
| US20100035523A1 (en) * | 2008-08-08 | 2010-02-11 | Fujitsu Microelectronics Limited | Semiconductor device fabricating method, and semiconductor fabricating device |
| US20110070810A1 (en) * | 2004-03-26 | 2011-03-24 | Hung Chih Chen | Multiple zone carrier head with flexible membrane |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040005842A1 (en) * | 2000-07-25 | 2004-01-08 | Chen Hung Chih | Carrier head with flexible membrane |
| KR100421445B1 (en) * | 2001-09-28 | 2004-03-09 | 삼성전자주식회사 | Method for rebuild of polishing head and Apparatus for inspecting an air leakage during rebuild of polishing head |
| CN101474771B (en) * | 2003-02-10 | 2012-07-11 | 株式会社荏原制作所 | Substrate holding flexible assembly, substrate polishing apparatus and method |
-
2011
- 2011-04-13 US US13/085,489 patent/US20120264359A1/en not_active Abandoned
- 2011-04-29 TW TW100115167A patent/TWI442998B/en active
- 2011-05-31 CN CN201110144307.5A patent/CN102729142B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020173242A1 (en) * | 1999-04-19 | 2002-11-21 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
| US20020094767A1 (en) * | 2000-03-27 | 2002-07-18 | Zuniga | Carrier head with multi-part flexible membrane |
| US20020182996A1 (en) * | 2000-03-27 | 2002-12-05 | Zuniga Steven M. | Methods for carrier head with multi-part flexible membrane |
| US6979250B2 (en) * | 2000-07-11 | 2005-12-27 | Applied Materials, Inc. | Carrier head with flexible membrane to provide controllable pressure and loading area |
| US20070232209A1 (en) * | 2000-11-23 | 2007-10-04 | Samsung Electronics Co., Ltd. | Method for polishing a semiconductor wafer |
| US20020177395A1 (en) * | 2001-05-23 | 2002-11-28 | Samsung Electronics Co., Ltd. | Polishing head of a chemical and mechanical polishing apparatus for polishing a wafer |
| US20080119121A1 (en) * | 2001-12-06 | 2008-05-22 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US20060079092A1 (en) * | 2002-04-18 | 2006-04-13 | Tetsuji Togawa | Polishing method |
| US20060199479A1 (en) * | 2003-02-10 | 2006-09-07 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US20080166957A1 (en) * | 2003-02-10 | 2008-07-10 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US20090233532A1 (en) * | 2003-02-10 | 2009-09-17 | Tetsuji Togawa | Substrate holding apparatus and polishing apparatus |
| US7001245B2 (en) * | 2003-03-07 | 2006-02-21 | Applied Materials Inc. | Substrate carrier with a textured membrane |
| US20050239371A1 (en) * | 2003-09-09 | 2005-10-27 | Tetsuji Togawa | Pressure control system and polishing apparatus |
| US20110070810A1 (en) * | 2004-03-26 | 2011-03-24 | Hung Chih Chen | Multiple zone carrier head with flexible membrane |
| US20050272346A1 (en) * | 2004-06-04 | 2005-12-08 | Jae-Phil Boo | Carrier head of chemical mechanical polishing apparatus having barriers dividing pressure chamber into a plurality of pressure zones |
| US20070293129A1 (en) * | 2004-12-10 | 2007-12-20 | Tetsuji Togawa | Substrate Holding Device And Polishing Apparatus |
| US20090142996A1 (en) * | 2007-11-29 | 2009-06-04 | Ebara Corporation | Polishing apparatus and method |
| US20100035523A1 (en) * | 2008-08-08 | 2010-02-11 | Fujitsu Microelectronics Limited | Semiconductor device fabricating method, and semiconductor fabricating device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI442998B (en) | 2014-07-01 |
| CN102729142B (en) | 2014-07-02 |
| TW201240771A (en) | 2012-10-16 |
| CN102729142A (en) | 2012-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: NANYA TECHNOLOGY CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIAO, CHIEN-MAO;CHEN, YI-NAN;LIU, HSIEN-WEN;REEL/FRAME:026139/0506 Effective date: 20110411 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |