[go: up one dir, main page]

US20120026692A1 - Electronics substrate with enhanced direct bonded metal - Google Patents

Electronics substrate with enhanced direct bonded metal Download PDF

Info

Publication number
US20120026692A1
US20120026692A1 US13/191,281 US201113191281A US2012026692A1 US 20120026692 A1 US20120026692 A1 US 20120026692A1 US 201113191281 A US201113191281 A US 201113191281A US 2012026692 A1 US2012026692 A1 US 2012026692A1
Authority
US
United States
Prior art keywords
metal layer
cooling
substrate
cooling metal
fins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/191,281
Other languages
English (en)
Inventor
Sy-Jenq Loong
Donald Lynn Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolverine Tube Inc
Original Assignee
Wolverine Tube Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US13/191,281 priority Critical patent/US20120026692A1/en
Assigned to WOLVERINE TUBE, INC. reassignment WOLVERINE TUBE, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LOONG, SY-JENQ, SMITH, DONALD LYNN
Application filed by Wolverine Tube Inc filed Critical Wolverine Tube Inc
Priority to PCT/US2011/045623 priority patent/WO2012015982A2/fr
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY AGREEMENT Assignors: WOLVERINE JOINING TECHNOLOGIES, LLC, WOLVERINE TUBE, INC.
Publication of US20120026692A1 publication Critical patent/US20120026692A1/en
Priority to US13/601,206 priority patent/US9681580B2/en
Assigned to PNC BANK, NATIONAL ASSOCIATION reassignment PNC BANK, NATIONAL ASSOCIATION SECURITY AGREEMENT Assignors: WOLVERINE TUBE, INC.
Assigned to WOLVERINE TUBE, INC., WOLVERINE JOINING TECHNOLOGIES, LLC reassignment WOLVERINE TUBE, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JPMORGAN CHASE BANK, N.A.
Priority to US14/307,074 priority patent/US9655294B2/en
Priority to US15/155,568 priority patent/US9795057B2/en
Priority to US15/786,179 priority patent/US10531594B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21JFORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • B21J5/06Methods for forging, hammering, or pressing; Special equipment or accessories therefor for performing particular operations
    • B21J5/068Shaving, skiving or scarifying for forming lifted portions, e.g. slices or barbs, on the surface of the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4878Mechanical treatment, e.g. deforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20218Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
    • H05K7/20254Cold plates transferring heat from heat source to coolant
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00Cutting
    • Y10T83/02Other than completely through work thickness
    • Y10T83/0333Scoring
    • Y10T83/0341Processes

Definitions

  • This invention relates to electronic substrates with direct bonded or direct plated metals, where the surface of the direct bonded or direct plated metal is enhanced for heat transfer purposes.
  • Certain electronic devices generate heat as they operate, and in some cases this heat has to be removed or dissipated for the device to continue operating properly.
  • Several techniques have been used to cool electronic equipment. Examples include fans, which are used to blow air over electronic equipment. This air serves to convectively cool the electronic equipment with normal ambient air.
  • Other techniques that have been used include liquid cold plates. Liquid cold plates are plates with channels through which liquid flows. The electronic equipment is mounted in contact with a liquid cold plate and the heat generated by the electronic equipment is transferred to the liquid coolant inside the plate. This can provide better cooling than the convective cooling provided by a fan with considerably less flow volume. It can also provide better temperature consistency with less acoustic noise.
  • Cold plates can be directly affixed to a heat-producing piece of electronic equipment, such as an electronic chip or an insulated gated bipolar transistor (IGBT). It is also possible to use thermal grease or other heat transfer aid between the electronic equipment and the cold plate to improve heat transfer.
  • the cold plate includes an inlet and an outlet for liquid coolant flow. The liquid coolant absorbs the heat produced by the electronic equipment, and transfers the absorbed heat to the coolant which then flows out of the cold plate.
  • Many cold plates provide cooling with a relatively low flow of liquid coolant. They can provide better temperature consistency than convective cooling, minimal acoustic noise and the cooling power of liquid coolants.
  • Cooling efficiency should be high, and cold plates should be securely sealed to prevent any leak of liquid coolant onto the electronic equipment being cooled.
  • the coolant may not be particularly clean, which can result in plugging of the cold plate.
  • a cold plate used in an automobile may utilize the anti-freeze liquid for cooling, and the anti-freeze can contain small particulates.
  • a cold plate it is also possible for a cold plate to be used for heating a component by replacing the coolant with a heating fluid.
  • One primary difference between a coolant and a heating fluid in one phase heat transfer is that the temperature of a coolant is lower than the item being cooled, and the temperature of a heating fluid is higher than the item being cooled.
  • a substrate for electronic components includes a ceramic tile and a cooling metal layer.
  • the cooling metal layer can include copper, aluminum, nickel, gold, or other metals.
  • the cooling metal layer has an enhanced surface facing away from the ceramic tile, where the enhanced surface includes either fins or pins.
  • Electronic components can be connected to the substrate on a surface opposite the cooling metal layer.
  • FIG. 1 shows a schematic diagram of one embodiment of a cooling system.
  • FIG. 2 depicts a side view of one embodiment of a substrate with an electronic component mounted on the substrate.
  • FIG. 3 is an exploded, perspective view of one embodiment of a substrate with mounted electronic components and a heat exchange device.
  • FIG. 4 is a cross-sectional side view of one embodiment of a substrate with mounted electronic components and heat exchange devices.
  • FIG. 5 is a side view of one embodiment of a tool forming fins from a substrate.
  • FIG. 6 is a perspective view of one embodiment of a tool forming fins from a substrate.
  • Liquids can provide better cooling than gases for several reasons. For example, liquids are denser than gases so more thermal mass is available to absorb heat from the electronic equipment. Also, liquids generally have higher thermal conductivities so heat will transfer into and through the liquid more rapidly than heat will transfer into and through a gas. Furthermore, liquids tend to have a higher specific heat than gases so a set quantity of liquid will absorb and transfer more heat than a comparable amount of gas. Because of this, when electronic equipment is utilized which produces large amounts of heat, many manufacturers desire the use of liquid cooling devices.
  • Liquid cooling systems include at least a liquid coolant and an article or substance that is cooled. Often, there is a barrier between the liquid coolant and the item being cooled, and heat must be transferred through this barrier. In some instances, the barrier can include multiple components and layers. A barrier between the item being cooled and the liquid coolant is generally desired for electronic equipment, because direct contact with liquids can damage some electronic components. Minimizing the resistance to heat flow through the barrier between the item being cooled and the liquid coolant improves the cooling efficiency.
  • Resistance to heat flow through a barrier Two significant forms of resistance to heat flow through a barrier include resistance through one material, and resistance across an interface between two separate components or parts. Resistance to heat flow through a single material is minimized if the material is a heat conductor, instead of a heat insulator. Copper is one material that can be used in a barrier, because it is a good conductor of heat and it is relatively malleable. However, other materials can also be used, including aluminum, steel and other metals, graphite, ceramics, and even insulating materials like plastic or air.
  • Another source of resistance to heat flow is at the interface between two components or parts.
  • heat flows from a first component to another component which contacts the first there is a resistance to heat flow between the two components. Reducing the number of interfaces can improve heat transfer rates.
  • thermal grease can be used to facilitate heat transfer between two different components or layers in a barrier, but a single heat transfer layer is typically more efficient than two separate layers even when thermal grease or other heat transfer agents are used.
  • fins, pins, or other structures on a surface contacting the liquid coolant can increase the surface area and improve heat transfer.
  • Surface area can be further increased by increasing the number of fins, pins, or other structures, or by increasing the surface area of each fin, pin, or structure.
  • a surface with fins, pins, or other structures to improve heat transfer is said to be “enhanced,” so the fins, pins, or other structures can be generically referred to as enhancements.
  • Forming enhancements directly from a heat transfer surface instead of attaching the enhancements to the heat transfer surface, can improve heat transfer because this eliminates the interface between the base of the heat transfer surface and the enhancement. Therefore, by forming fins or other enhancements from the material of the heat transfer surface, resistance to heat flow is minimized. If one were to produce the enhancements separately and then affix them to the heat transfer surface, there would be a resistance to heat flow between the enhancements and the heat transfer surface at the interface, which would have a negative impact on the heat transfer rate. This is true even if separate enhancements and the heat transfer surface were made from the same material, such as copper.
  • the enhancements directly from the material of the heat transfer surface such that the enhancements are an extension of the heat transfer surface, and there is no interface between the enhancements and heat transfer surface. This is referred to as having the enhancements “monolithic” with the heat transfer surface.
  • liquids will flow across a solid in what is referred to as laminar flow.
  • laminar flow the layer of liquid directly contacting the solid surface remains essentially stationary at the solid surface.
  • the layer of liquid directly above that layer moves very gradually across the first layer.
  • the next layer up moves a little more swiftly, etc., such that the highest flow rate will be at a point relatively far from the solid surface.
  • the lowest flow rate, which is essentially zero, will be at the solid surface.
  • Each different layer of liquid which is sliding over the adjacent layers provides its own resistance to heat flow, and each layer can have a different temperature so the warmest liquid is often adjacent the solid surface and the coolest liquid is relatively far from the solid surface. Therefore, if the liquid can be mixed during flow, the liquid directly contacting the solid surface can absorb heat from the solid surface and then be mixed with the entire body of cooling liquid to spread the absorbed heat into the liquid more rapidly.
  • Turbulent flow causes liquids to mix as they flow across a solid surface, as opposed to laminar flow. This tends to keep the liquid in contact with the solid surface cooler, which facilitates a faster transfer of heat from the solid surface to the liquid.
  • Some things which tend to increase turbulent flow include faster flow rates, uneven surfaces, projections into a flowing liquid, and various obstructions that force a liquid to change path and flow another way.
  • To maximize turbulence one can include sharp bends, twisting edges, pins, fins, and any of a wide variety of flow obstructions that cause rapid change in the direction of flow of a liquid.
  • Many structures which increase turbulence can also increase pressure drop across a cold plate. Increased pressure drop can lower the flow rate, so a balance must be observed to ensure efficient heat transfer.
  • Obstructions which tend to increase the amount of fluid flow close to the solid surface also tends to increase heat transfer, because this reduces the thickness of any stagnant liquid layer at the solid liquid interface, and it also reduces the distance heated liquid . has to travel to intermix with the main body of cooling liquid.
  • the liquid can be boiled, or vaporized, in the heat transfer process.
  • This is referred to as two phase cooling because the coolant changes phase from a liquid to a gas in the cooling process.
  • a liquid absorbs heat to vaporize, so the heat of vaporization of the liquid is absorbed, and this can increase the overall cooling effect.
  • Two phase cooling can require some additional components, such as a condenser to re-liquefy the coolant from a gas, as is understood by those skilled in the art.
  • the principles discussed in this description also apply to two phase cooling.
  • the coolant is recirculated and used repeatedly.
  • a fan 2 is used to blow cooling air through a convective cooling device 4 , and the coolant is pumped through the convective cooling device 4 by a pump 6 .
  • the coolant exiting the convective cooling device 4 is relatively cool, and is pumped through a heat transfer device 10 which is connected to an electronic component 8 .
  • the coolant is heated as the electronic component 8 is cooled, and the heated coolant is then pumped back to the convective cooling device 4 to be cooled once again.
  • the coolant can be used to cool many different electronic components 8 before returning to the convective cooling device 4 , and these different electronic components 8 can be connected in series, parallel, or both.
  • the convective cooling device 4 can be replaced with a heat exchanger that cools the coolant with another liquid, such as once through cooling water.
  • the cooling system can use once through cooling liquid, and it is even possible for the system to be used for heating components instead of cooling them because the same heat transfer principles apply to heating as to cooling.
  • the substrate 12 can provide interconnections necessary to form an electric circuit, similar to a printed circuit board.
  • the substrate 12 can also be used to help cool the connected electronic components 8 .
  • One type of substrate 12 used is a direct bonded copper (DBC) substrate 12 , where a layer of copper is directly bonded or directly plated to one or both sides of an insulating material, such as a ceramic tile 14 . It may be possible to use other electrically insulating but thermally conductive materials in place of the ceramic tile 14 , such as different polymers, foams, or other electrical insulators.
  • DBC direct bonded copper
  • a direct plated copper substrate 12 can also be used for electric circuits, where direct plating is an alternative method of fixing metal to a substrate 12 .
  • direct bonded copper and “DBC” are defined to include direct bonded copper and direct plated copper.
  • references to direct bonded aluminum or other direct bonded metals also include direct plating of the metal to the substrate 12 .
  • the copper layer on one side is pre-formed or etched to form at least part of the electrical circuit, and the copper layer essentially covers the other side to help spread and transfer heat to cool the electrical components.
  • aluminum can be directly bonded or directly plated to a ceramic tile 14 instead of copper. It is even possible to use other metals or other materials in place of the copper or aluminum.
  • the ceramic tile 14 has an electronics face 17 opposite a cooling face 15 , and the cooling metal layer 16 is directly bonded to the cooling face 15 while the electronic metal layer 18 is directly bonded to the electronic face 17 .
  • the ceramic tile 14 can be formed from aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), beryllium oxide (BeO), or other materials, and frequently has a thickness between about 0.28 millimeters (mm) and 0.61 mm, but other thicknesses are possible.
  • the cooling and electronic metal layers 16 , 18 can be a wide variety of materials, and the thickness of the metal layers 16 , 18 can depend on the metal used, desired performance, and other factors.
  • a copper layer directly bonded or directly plated to the ceramic tile 14 frequently has thicknesses ranging from 0.25 mm to 0.41 mm, but other thicknesses are possible.
  • the thickness of the aluminum layer can be approximately 0.3 mm, but other thicknesses are possible.
  • the cooling metal layer 14 has a cooling metal layer thickness 19 which can be between 0.2 and 0.5 millimeters.
  • the cooling layer outer surface 20 and/or the electronic layer outer surface 22 can have a first coating layer 24 , the first coating layer 24 can have a second coating layer 26 , and there can be additional coating layers as well.
  • the cooling and electronic layer outer surfaces 20 , 22 are the surfaces facing away from the ceramic tile 14 .
  • the “cooling layer outer surface 20 ” is defined to mean the cooling metal layer 16 outer surface before any fins or other enhancements are formed from the cooling metal layer 16 , or a section of the cooling metal layer 16 which has not had any fins or enhancements formed from it.
  • the electronic layer outer surface 22 is similarly defined, except with reference to the electronic metal layer 18 instead of the cooling metal layer 16 .
  • the first coating layer 24 can be low phosphorus electroless or electrolytic nickel, and the second coating layer 26 can be a gold layer, but other material combinations are possible.
  • the nickel layer can be about 2 to 7 micrometers (um) thick, and the gold layer can be about 80 nanometers (nm) thick, but other thicknesses for each layer are also possible. It is also possible to directly bond a copper layer to one side of a ceramic tile 14 , and an aluminum layer to the other side of the ceramic tile 14 , or to use other combinations of metals for the cooling and electronic metal layer 16 , 18 .
  • the direct bonded or direct plated copper substrates 12 tend to have a relatively low coefficient of thermal expansion that is close to the coefficient of thermal expansion of silicon, due to the high bond strength of copper to the ceramic substrate 12 .
  • Many electronic components 8 contain silicon, so having a substrate 12 with a similar coefficient of thermal expansion can increase thermal cycling performance.
  • the fact that the direct bonded or direct plated copper substrate 12 has a coefficient of thermal expansion similar to that of silicon can also reduce the need for interface layers between the substrate 12 and silicon components.
  • the direct bonded or direct plated copper substrates 12 have many desirable characteristics known to those skilled in the art, including good heat spreading and thermal conductivity, as well as a high electrical insulation value.
  • Connecting the direct bonded or direct plated copper, or the direct bonded or direct plated aluminum substrates 12 to a cold plate or other coolant containing device can provide for liquid cooling.
  • heat has to transfer from the electronic component 8 to the electronic metal layer 18 , then to the ceramic tile 14 , then to the cooling metal layer 16 , then to the wall of the cold plate, and then finally to the cooling liquid.
  • Providing an enhanced surface on the cooling metal layer 16 , and moving coolant directly past the enhanced cooling metal layer 16 would reduce the resistance to heat transfer created by the interface between the substrate 12 and the cold plate, and also the resistance to heat transfer through the barrier wall of the cold plate.
  • a heat exchange device 10 can be affixed to the substrate 12 for thermal management, as seen in FIGS. 3 and 4 with continuing reference to FIGS. 1 and 2 .
  • the heat exchange device 10 can comprise a tub 28 that is affixed to the substrate 12 to create a chamber 30 adjacent to the substrate 12 .
  • the chamber 30 can he made with a spacer and a cover, or many other structures which provide an enclosed space adjacent to the substrate 12 .
  • An inlet 32 and an outlet 34 are provided, where the inlet 32 and outlet 34 penetrate the chamber 30 to allow liquid to flow into and out of the chamber 30 , so the inlet 32 and outlet 34 are in fluid communication through the chamber 30 .
  • the inlet 32 and outlet 34 can penetrate the tub 28 , but it is also possible for one or more of the inlet 32 and outlet 34 to penetrate the substrate 12 to provide access to the chamber 30 , or to penetrate any other structure used to make the chamber 30 .
  • the tub 28 can be affixed to the cooling metal layer 16 such that the cooling metal layer 16 forms a part of the chamber 30 , so fluid flowing through the chamber 30 would contact and pass directly over the cooling metal layer 16 .
  • the cooling metal layer 16 can be machined to form an enhanced surface 35 , where the enhanced surface 35 comprises fins 36 , but it is also possible for the enhanced surface 35 to comprise pins 38 or other structures, as desired.
  • the tub 28 is connected to the cooling metal layer 16 such that the enhanced surface 35 is positioned within the chamber 30 , so coolant will contact and flow directly past the enhanced surface 35 .
  • no enhancements are made to selected portions of the cooling metal layer 16 , so this unenhanced portion of the cooling metal layer 16 can be used to form a seal with the tub 28 , which can help prevent coolant leaks.
  • the chamber 30 maintains liquid coolant over the enhanced surface 35 , but the chamber 30 also serves to contain the liquid coolant and thereby protect the electronic components 8 , the electronic metal layer 18 , and other components from direct contact with the liquid coolant.
  • the chamber 30 is one portion of a liquid coolant containment system.
  • Enhancements primarily include fins 36 and pins 38 of various shapes and dimensions, but can also include other structures like hollow vertical circular protrusions, horizontal hollow boxes, or other shapes.
  • Pins 38 include rectangular or round fingers extending from the cooling layer outer surface 20 , but pins also include other shapes like pyramids or semi spheres.
  • the enhancements can extend from the substrate 12 all the way to the tub 28 , so the enhancements actually touch the inner surface of the tub 28 , or the enhancements can extend to a distance short of the tub inner surface. Enhancements which touch the tub 28 can result in higher heat transfer rates than shorter enhancements, but they can also result in higher pressure drops which may lead to lower coolant flow rates, and lower coolant flow rates can decrease heat transfer rates.
  • the shape and size of the enhancements can also affect the pressure drop and heat transfer rates.
  • the fins 36 provide increased surface area for heat transfer, and also can increase turbulence in the coolant flow, both of which can increase heat transfer rates.
  • Channels 44 are positioned between adjacent fins 36 , and fluid can flow through the channels 44 , as seen in FIGS. 5 and 6 , with continuing reference to FIGS. 1-4 . Fluid flowing through the channels 44 is in close proximity to the fins 36 , and heat transfer between the fluid and the fins 36 can be rapid.
  • Fins 36 have been used for some time to increase heat transfer, and the size, shape, and structure of the fin 36 can all impact the overall heat transfer rate.
  • Fin structures can include such things as platforms at the top of a fin 36 , crenellated fin tops, side projections, etc. Pins 38 provide similar heat transfer improvements for similar reasons, and can also include structural modifications or enhancements.
  • the tub 28 or other structures forming part of the chamber 30 can be over essentially all of the cooling metal layer 16 , but in other embodiments the chamber 30 will cover only a portion of the cooling metal layer 16 , or there may be a plurality of different chambers 30 covering various different portions of the cooling metal layer 16 .
  • the size and spacing of the enhancements can vary between different chambers 30 , and even within one chamber, as desired.
  • There can be a plurality of enhanced surfaces 35 on one cooling metal layer 16 and each different enhanced surface 35 can comprise the same type of enhancement or different types of enhancements.
  • the plurality of different enhanced surfaces 35 on a single cooling metal layer 16 can be discrete, separate “islands,” within discrete, separate chambers 30 .
  • the different enhanced surfaces 35 can be within the same chamber 30 , where the different enhanced surfaces 35 can be connected, or the different enhanced surfaces 35 can be separated by a portion of the cooling metal layer 16 which is not enhanced.
  • the tub 28 or other structures can be connected to the substrate 12 in a wide variety of methods, including but not limited to soldering, screws, pins, adhesive, and sonic welding. The connection between the components that form the chamber 30 should be secure to prevent coolant leaks.
  • Providing a chamber 30 with coolant flow directly contacting the cooling metal layer 16 at the enhanced surface 35 can improve heat transfer rates by reducing the number of interfaces and layers between an electronic component 8 and the coolant, as discussed above. Additionally, providing a thin substrate 12 with a directly connected cooling chamber 30 can reduce the space required for electronic components 8 for several reasons. First, a thin substrate 12 requires less room than a thicker substrate 12 . Secondly, a cooling chamber 30 directly connected to the substrate 12 can reduce the total amount of material between the electronic component 8 and the coolant, and less material takes up less space. Thirdly, the use of liquid coolant can provide increased cooling over convective cooling with air flow, so electronic components 8 may be positioned closer together while still maintaining thermal control.
  • the substrate 12 includes a ceramic tile 14 and a cooling metal layer 16 , and machining can be used to enhance the cooling metal layer 16 to form an enhanced surface 35 .
  • the ceramic tile 14 is a brittle material, so any machining done to the substrate 12 should prevent flexing or bending of the substrate 12 , and should also control other stresses that can fracture or break the ceramic tile 14 .
  • the substrate 12 should be secured to prevent slipping or other motion.
  • the substrate 12 is flat, so the supporting surface should also be flat for machining. Additionally, the machining operation should be very precise, because all the various components of the substrate 12 can be thin, so there is little margin for error.
  • the substrate 12 can be secured to a machining base 50 by several techniques known to those skilled in the art. Some techniques for securing the substrate to the machining base 50 include securing a stop block 52 to the machining base 50 , and abutting the substrate 12 against the stop block 52 such that the stop block 52 prevents the substrate 12 from slipping as the tool 40 passes through the cooling metal layer 16 . Screws 54 can secure the stop block 52 to the machining base 50 , but clamps, bolts, welding, or many other techniques can also be used. The substrate 12 can be further secured to the machining base 50 with clamps, but vacuum applied to the substrate surface contacting the machining base 50 can secure the substrate 12 in place without obstructing the substrate surface being machined.
  • the current invention includes a method of enhancing the cooling layer outer surface 20 , and also a method for enhancing the electronic layer outer surface 22 if desired.
  • the electronic layer outer surface 22 can be enhanced in the same manner as the cooling layer outer surface 20 , so this description will only describe enhancing the cooling layer outer surface 20 with the understanding that the electronic layer outer surface 22 could be enhanced in the same manner.
  • Fins 36 can be formed on the cooling metal layer 16 using a process called micro deformation technology (MDT), which is described in U.S. Pat. No. 5,775,187, issued Jul. 7, 1998, and which is hereby incorporated in full into this description.
  • MDT micro deformation technology
  • the cooling metal layer 16 is sliced with a tool 40 without removing material from the cooling metal layer 16 .
  • the MDT process is different than a saw or router, which removes material as cuts are made, and is more similar to the cutting of meat with a knife.
  • the slicing of the cooling metal layer 16 is done with the tool 40 . As the tool 40 contacts the material of the cooling metal layer 16 , a fin 36 is cut into the cooling metal layer 16 . The slicing of the fins 36 from the cooling metal layer 16 results in the fins 36 being monolithic with the cooling metal layer 16 , which improves heat transfer as discussed above. The fins 36 are formed directly from the material of the cooling metal layer 16 , so there is no joint or break between the fin 36 and the cooling metal layer 16 .
  • the fins 36 are one embodiment of an enhanced surface 35 .
  • the cutting of the cooling metal layer 16 forms a channel 44 between adjacent fins 36 , and can be done without removing Material from the cooling metal layer 16 . Preferably, there are no shavings produced in the formation of the fins 36 .
  • the tool 40 cuts fins 36 into the cooling metal layer 16 , and the space produced as the tool 40 passes through the cooling metal layer 16 forces material in the fins 36 upwards. This cutting and deformation of the cooling metal layer 16 causes the fins 36 to rise to a fin height 46 which is higher than the original cooling layer outer surface 20 .
  • the cutting tool design, the depth of the cut, and the width of the fins 36 and channels 44 are factors which affect the fin height 46 .
  • the tool 40 is moved slightly in one direction for each successive cut, so each cut forms a fin 36 adjacent to the previously cut fin 36 . This process is repeated until a bed of fins 36 has been produced.
  • Pins 38 are made by slicing across the fins 36 with a second series of cuts.
  • the second set of slices can also use the MDT method, and raise the pins 38 to a pin height 48 greater than the fin height 46 .
  • the second set of slices can be made at a wide variety of angles to the fins 36 , including ninety degrees or an angle other than ninety degrees.
  • the incline angle of the pin 38 and/or the fin 36 can be manipulated by the angle of the tool 40 as the slices are made. A modification of the incline angle of the fin 36 can change the incline angle of the pin 38 .
  • the fins 36 are made without using the MDT process, and the pins 38 are then formed from the fins 36 using the MDT process.
  • the fins 36 are made using the MDT process, and the pins 38 are then formed from the fins 36 using a conventional cutting process different than the MDT process.
  • the fins 36 are cut at a specified fin width 37 , with a specified channel width 45 , so there are a predetermined number of fins 36 per centimeter. Similar specific dimensions can be set for pins 38 . Many dimensions of the enhanced surface 35 can be controlled by specifying the tool design and settings for the machining operation used.
  • the production of the tub 28 or comparable structures can be accomplished by traditional methods. This includes stamping, cutting, pouring, molding, machining and other standard metal working techniques.
  • the MDT cutting process can be performed on a CNC milling machine, a lathe, a shaper, or other machining tools.
  • the cutting depth should not be so deep that the integrity of the ceramic tile 14 is compromised, and the cutting depth should be deep enough to produce a fin height 46 sufficient to achieve the desired heat transfer rate.
  • a cutting depth of about 60 to 70 percent of the cooling metal layer thickness 19 can be used.
  • the tool 40 should cut into the cooling metal layer 16 to a depth less than the cooling metal layer thickness 19 .
  • Successful beds of fins 36 have been made with between about 20 to about 60 fins per centimeter (cm), but other fin densities are also possible.
  • fin dimensions on direct bonded substrates includes a cooling metal layer thickness 19 , as measured before the fins 36 are cut, of 0.30 mm, and a fin height 46 of 0.53 mm, a fin width of 0.17 mm, and a channel width of 0.17 mm.
  • the cooling layer outer surface 20 is determined either before the fins 36 are cut or at a point where no fins 36 are formed in the cooling metal layer 16 .
  • the fin height 46 is larger than the cooling metal layer thickness 19 , and the fins 36 begin at a point within the cooling metal layer 16 , so the fins 36 extend beyond the cooling layer outer surface 20 .
  • the pins 38 extend to a pin height 48 which is higher than the fin height 46 before the pins 38 were made. Therefore, the pins 38 extend beyond the cooling layer outer surface 20 , similar to the fins 36 .
  • a lathe is used for machining blank substrates 12 , where a substrate 12 is considered blank before the cooling metal layer 16 is enhanced.
  • the lathe can have a disk-shaped face that is perpendicular to the axis of rotation, and one or more blank substrates 12 can be secured close to the outer edge of the face of a lathe.
  • the blank substrates 12 can be set opposite each other to help balance the lathe face during rotation.
  • the tool 40 can then be directed into the face of the lathe, essentially parallel to the axis of rotation of the lathe, for machining of the substrates 12 .
  • the tool 40 is slowly moved either towards the axis of rotation of the lathe, or away from the axis of rotation of the lathe, so the tool 40 contacts the blank substrates 12 at different positions with every rotation of the lathe. In this manner, several blank substrates 12 can be machined simultaneously on a single lathe. Machining near the edge of the face of lathe produces fins 36 which are not straight, but which have a slight curve determined by the distance of the substrate 12 from the lathe's axis of rotation. Border areas can then be machined flat for mounting a tub 28 sealed to the cooling metal layer 16 , if desired.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
US13/191,281 2010-07-28 2011-07-26 Electronics substrate with enhanced direct bonded metal Abandoned US20120026692A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US13/191,281 US20120026692A1 (en) 2010-07-28 2011-07-26 Electronics substrate with enhanced direct bonded metal
PCT/US2011/045623 WO2012015982A2 (fr) 2010-07-28 2011-07-27 Substrat de circuits électroniques avec métal lié directement amélioré
US13/601,206 US9681580B2 (en) 2010-07-28 2012-08-31 Method of producing an enhanced base plate
US14/307,074 US9655294B2 (en) 2010-07-28 2014-06-17 Method of producing electronics substrate with enhanced direct bonded metal
US15/155,568 US9795057B2 (en) 2010-07-28 2016-05-16 Method of producing a liquid cooled coldplate
US15/786,179 US10531594B2 (en) 2010-07-28 2017-10-17 Method of producing a liquid cooled coldplate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36847510P 2010-07-28 2010-07-28
US13/191,281 US20120026692A1 (en) 2010-07-28 2011-07-26 Electronics substrate with enhanced direct bonded metal

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US13/601,206 Continuation-In-Part US9681580B2 (en) 2010-07-28 2012-08-31 Method of producing an enhanced base plate

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/601,206 Continuation-In-Part US9681580B2 (en) 2010-07-28 2012-08-31 Method of producing an enhanced base plate
US14/307,074 Continuation US9655294B2 (en) 2010-07-28 2014-06-17 Method of producing electronics substrate with enhanced direct bonded metal

Publications (1)

Publication Number Publication Date
US20120026692A1 true US20120026692A1 (en) 2012-02-02

Family

ID=45526534

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/191,281 Abandoned US20120026692A1 (en) 2010-07-28 2011-07-26 Electronics substrate with enhanced direct bonded metal
US14/307,074 Active US9655294B2 (en) 2010-07-28 2014-06-17 Method of producing electronics substrate with enhanced direct bonded metal

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/307,074 Active US9655294B2 (en) 2010-07-28 2014-06-17 Method of producing electronics substrate with enhanced direct bonded metal

Country Status (2)

Country Link
US (2) US20120026692A1 (fr)
WO (1) WO2012015982A2 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120182687A1 (en) * 2011-01-14 2012-07-19 Microsoft Corporation Adaptive thermal management for devices
EP2725612A1 (fr) * 2012-10-29 2014-04-30 TP Vision Holding B.V. Dispositif conducteur de chaleur et procédé de formation d'un dispositif conducteur de chaleur
WO2015112771A3 (fr) * 2014-01-22 2015-11-12 Wolverine Tube, Inc. Micro-plaque à ailettes sur les deux faces pour un échangeur thermique à plaques
US20160021785A1 (en) * 2014-07-21 2016-01-21 Lenovo (Beijing) Limited Electronic device
US20160174414A1 (en) * 2013-08-07 2016-06-16 Abb S.P.A. Cooling Apparatus For An Electrical Or Electronic Device, And Electrical Or Electronic Device, In Particular A Circuit Breaker, Comprising Such Cooling Apparatus
GB2536051A (en) * 2015-03-06 2016-09-07 Hiflux Ltd Heatsink
US9795057B2 (en) 2010-07-28 2017-10-17 Wolverine Tube, Inc. Method of producing a liquid cooled coldplate
US10531594B2 (en) 2010-07-28 2020-01-07 Wieland Microcool, Llc Method of producing a liquid cooled coldplate
WO2022070041A1 (fr) * 2020-09-30 2022-04-07 Coolit Systems, Inc. Dispositifs de refroidissement par liquide, et systèmes, destinés à refroidir des modules multi-puce
US11564307B2 (en) * 2016-12-22 2023-01-24 Rogers Germany Gmbh Carrier substrate with a thick metal interlayer and a cooling structure
WO2025027417A1 (fr) * 2023-07-28 2025-02-06 Dyson Technology Limited Taillage pour la fabrication de composants
US12435732B1 (en) 2024-09-19 2025-10-07 Microsoft Technology Licensing, Llc Centrifugal blower housing

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110543069A (zh) 2018-05-28 2019-12-06 中强光电股份有限公司 液冷式散热器
US10900412B2 (en) * 2018-05-31 2021-01-26 Borg Warner Inc. Electronics assembly having a heat sink and an electrical insulator directly bonded to the heat sink
US11856728B2 (en) * 2020-10-29 2023-12-26 Auras Technology Co., Ltd. Liquid cooling device
US20240030122A1 (en) * 2022-07-19 2024-01-25 Semiconductor Components Industries, Llc Dual side cooled power module with three-dimensional direct bonded metal substrates

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
US6020637A (en) * 1997-05-07 2000-02-01 Signetics Kp Co., Ltd. Ball grid array semiconductor package
US7755185B2 (en) * 2006-09-29 2010-07-13 Infineon Technologies Ag Arrangement for cooling a power semiconductor module
US20100206537A1 (en) * 2007-05-29 2010-08-19 Toshiya Ikeda Heat spreader for semiconductor device and method for manufacturing the same
US8081465B2 (en) * 2008-11-28 2011-12-20 Fuji Electric Systems Co., Ltd. Cooling apparatus for semiconductor chips

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979042A (en) 1975-01-16 1976-09-07 Raytheon Company Vacuum brazing of nickel to aluminum
JP2708495B2 (ja) 1988-09-19 1998-02-04 株式会社日立製作所 半導体冷却装置
US5183104A (en) 1989-06-16 1993-02-02 Digital Equipment Corporation Closed-cycle expansion-valve impingement cooling system
JP2995590B2 (ja) 1991-06-26 1999-12-27 株式会社日立製作所 半導体冷却装置
RU2044606C1 (ru) * 1993-04-30 1995-09-27 Николай Николаевич Зубков Способ получения поверхностей с чередующимися выступами и впадинами (варианты) и инструмент для его осуществления
US5453911A (en) 1994-02-17 1995-09-26 General Motors Corporation Device for cooling power electronics
US5801442A (en) 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
US5796049A (en) 1997-04-04 1998-08-18 Sundstrand Corporation Electronics mounting plate with heat exchanger and method for manufacturing same
US6233149B1 (en) 1997-04-23 2001-05-15 General Electric Company High power inverter air cooling
US5818692A (en) 1997-05-30 1998-10-06 Motorola, Inc. Apparatus and method for cooling an electrical component
IT1297593B1 (it) 1997-08-08 1999-12-17 Itelco S P A Dissipatore per componenti elettronici raffreddato a liquido, dotato di alette dissipatrici disposte in maniera selettiva
JP3552484B2 (ja) 1997-09-16 2004-08-11 三菱電機株式会社 半導体装置
US6400012B1 (en) 1997-09-17 2002-06-04 Advanced Energy Voorhees, Inc. Heat sink for use in cooling an integrated circuit
US6284389B1 (en) 1999-04-30 2001-09-04 Pacific Aerospace & Electronics, Inc. Composite materials and methods for manufacturing composite materials
US20020036881A1 (en) 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
US6250127B1 (en) 1999-10-11 2001-06-26 Polese Company, Inc. Heat-dissipating aluminum silicon carbide composite manufacturing method
US20020006526A1 (en) 1999-10-11 2002-01-17 Polese Frank J. Aluminum silicon carbide and copper clad material and manufacturing process
US6644395B1 (en) 1999-11-17 2003-11-11 Parker-Hannifin Corporation Thermal interface material having a zone-coated release linear
DE19960840A1 (de) 1999-12-16 2001-07-05 Siemens Ag Elektronische Schaltung mit Kühlvorrichtung
JP2003051689A (ja) 2001-08-06 2003-02-21 Toshiba Corp 発熱素子用冷却装置
JP3946018B2 (ja) 2001-09-18 2007-07-18 株式会社日立製作所 液冷却式回路装置
US6988534B2 (en) 2002-11-01 2006-01-24 Cooligy, Inc. Method and apparatus for flexible fluid delivery for cooling desired hot spots in a heat producing device
JP4133170B2 (ja) * 2002-09-27 2008-08-13 Dowaホールディングス株式会社 アルミニウム−セラミックス接合体
TWI295726B (en) 2002-11-01 2008-04-11 Cooligy Inc Method and apparatus for achieving temperature uniformity and hot spot cooling in a heat producing device
US6986382B2 (en) 2002-11-01 2006-01-17 Cooligy Inc. Interwoven manifolds for pressure drop reduction in microchannel heat exchangers
US7836597B2 (en) 2002-11-01 2010-11-23 Cooligy Inc. Method of fabricating high surface to volume ratio structures and their integration in microheat exchangers for liquid cooling system
US7017654B2 (en) 2003-03-17 2006-03-28 Cooligy, Inc. Apparatus and method of forming channels in a heat-exchanging device
US7215545B1 (en) * 2003-05-01 2007-05-08 Saeed Moghaddam Liquid cooled diamond bearing heat sink
DE112004002811T5 (de) 2004-03-30 2008-03-13 Purdue Research Foundation, Lafayette Verbesserte Mikrokanal-Wärmesenke
CN2696126Y (zh) 2004-04-06 2005-04-27 谢步明 Igbt迷宫式水冷散热器
US6989991B2 (en) 2004-05-18 2006-01-24 Raytheon Company Thermal management system and method for electronic equipment mounted on coldplates
US7188662B2 (en) 2004-06-04 2007-03-13 Cooligy, Inc. Apparatus and method of efficient fluid delivery for cooling a heat producing device
US7190581B1 (en) 2005-01-11 2007-03-13 Midwest Research Institute Low thermal resistance power module assembly
EP1858078A4 (fr) 2005-01-20 2009-03-04 Almt Corp Element pour un dispositif semi-conducteur et procede pour sa fabrication
DE102005025381A1 (de) 2005-05-31 2006-12-07 Behr Industry Gmbh & Co. Kg Vorrichtung zur Kühlung von elekronischen Bauelementen
JP4699820B2 (ja) 2005-06-28 2011-06-15 本田技研工業株式会社 パワー半導体モジュール
US7709099B2 (en) 2005-07-04 2010-05-04 Kyocera Corporation Bonded body, wafer support member using the same, and wafer treatment method
US8084870B2 (en) 2006-03-27 2011-12-27 Fairchild Semiconductor Corporation Semiconductor devices and electrical parts manufacturing using metal coated wires
DE102006019376A1 (de) 2006-04-24 2007-10-25 Bombardier Transportation Gmbh Leistungskühler für Stromrichterbaugruppen und Stromrichter, insbesondere für Schienen- und Hybridfahrzeuge
US7557438B2 (en) 2006-04-27 2009-07-07 Intel Corporation Cooling mechanism for stacked die package, and method of manufacturing stacked die package containing same
JP2008098493A (ja) 2006-10-13 2008-04-24 Matsushita Electric Ind Co Ltd 熱伝導基板とその製造方法及び回路モジュール
EP1936683A1 (fr) 2006-12-22 2008-06-25 ABB Technology AG Plaque de base pour dissipateur thermique et dispositif électronique avec plaque de base
JP2008205383A (ja) 2007-02-22 2008-09-04 Toyota Central R&D Labs Inc 半導体モジュールおよびその製造方法
US7564129B2 (en) 2007-03-30 2009-07-21 Nichicon Corporation Power semiconductor module, and power semiconductor device having the module mounted therein
JP5120605B2 (ja) 2007-05-22 2013-01-16 アイシン・エィ・ダブリュ株式会社 半導体モジュール及びインバータ装置
US7884468B2 (en) 2007-07-30 2011-02-08 GM Global Technology Operations LLC Cooling systems for power semiconductor devices
JP5057221B2 (ja) * 2007-08-24 2012-10-24 中村製作所株式会社 放熱部付き金属ベースプリント基板及びその製造方法
KR20090062139A (ko) 2007-12-12 2009-06-17 현대자동차주식회사 아이지비티 모듈용 발열장치
JP4785878B2 (ja) 2008-02-06 2011-10-05 本田技研工業株式会社 冷却装置及び該冷却装置を備える電気車両
WO2010020438A1 (fr) 2008-08-22 2010-02-25 Siemens Aktiengesellschaft Dispositif de refroidissement
JP4634497B2 (ja) 2008-11-25 2011-02-16 三菱電機株式会社 電力用半導体モジュール
US20100147492A1 (en) 2008-12-10 2010-06-17 Ronald David Conry IGBT cooling method
US20100314072A1 (en) 2009-06-11 2010-12-16 Hsing-Chung Lee Base plate with tailored interface
CN201623026U (zh) 2009-12-23 2010-11-03 中国北车集团大连机车研究所有限公司 Igbt板式水冷却器
EP2752104B1 (fr) 2011-09-02 2022-05-04 Wieland Microcool, LLC Assemblage d´une plaque de base en métal plaqué améliorée

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
US6020637A (en) * 1997-05-07 2000-02-01 Signetics Kp Co., Ltd. Ball grid array semiconductor package
US7755185B2 (en) * 2006-09-29 2010-07-13 Infineon Technologies Ag Arrangement for cooling a power semiconductor module
US20100206537A1 (en) * 2007-05-29 2010-08-19 Toshiya Ikeda Heat spreader for semiconductor device and method for manufacturing the same
US8081465B2 (en) * 2008-11-28 2011-12-20 Fuji Electric Systems Co., Ltd. Cooling apparatus for semiconductor chips

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10531594B2 (en) 2010-07-28 2020-01-07 Wieland Microcool, Llc Method of producing a liquid cooled coldplate
US9795057B2 (en) 2010-07-28 2017-10-17 Wolverine Tube, Inc. Method of producing a liquid cooled coldplate
US8712598B2 (en) * 2011-01-14 2014-04-29 Microsoft Corporation Adaptive flow for thermal cooling of devices
US20120182687A1 (en) * 2011-01-14 2012-07-19 Microsoft Corporation Adaptive thermal management for devices
EP2725612A1 (fr) * 2012-10-29 2014-04-30 TP Vision Holding B.V. Dispositif conducteur de chaleur et procédé de formation d'un dispositif conducteur de chaleur
WO2014067775A1 (fr) * 2012-10-29 2014-05-08 Tp Vision Holding B.V. Dispositif thermoconducteur et procédé permettant de former un dispositif thermoconducteur
US9572282B2 (en) 2012-10-29 2017-02-14 Tp Vision Holding B.V. Heat conductor device and method of forming a heat conductor device
US9736967B2 (en) * 2013-08-07 2017-08-15 Abb S.P.A. Cooling apparatus for an electrical or electronic device, and electrical or electronic device, in particular a circuit breaker, comprising such cooling apparatus
US20160174414A1 (en) * 2013-08-07 2016-06-16 Abb S.P.A. Cooling Apparatus For An Electrical Or Electronic Device, And Electrical Or Electronic Device, In Particular A Circuit Breaker, Comprising Such Cooling Apparatus
WO2015112771A3 (fr) * 2014-01-22 2015-11-12 Wolverine Tube, Inc. Micro-plaque à ailettes sur les deux faces pour un échangeur thermique à plaques
CN106105410A (zh) * 2014-01-22 2016-11-09 高克联管件有限公司 用于板热交换器的双侧面微型翅片板
US20160021785A1 (en) * 2014-07-21 2016-01-21 Lenovo (Beijing) Limited Electronic device
US9431596B2 (en) * 2014-07-21 2016-08-30 Beijing Lenovo Software Ltd. Electronic device
GB2536051A (en) * 2015-03-06 2016-09-07 Hiflux Ltd Heatsink
US11564307B2 (en) * 2016-12-22 2023-01-24 Rogers Germany Gmbh Carrier substrate with a thick metal interlayer and a cooling structure
WO2022070041A1 (fr) * 2020-09-30 2022-04-07 Coolit Systems, Inc. Dispositifs de refroidissement par liquide, et systèmes, destinés à refroidir des modules multi-puce
US11924996B2 (en) 2020-09-30 2024-03-05 Coolit Systems, Inc. Liquid-cooling devices, and systems, to cool multi-chip modules
US12363857B2 (en) 2020-09-30 2025-07-15 Coolit Systems, Inc. Liquid-cooling devices, and systems, to cool multi-chip modules
WO2025027417A1 (fr) * 2023-07-28 2025-02-06 Dyson Technology Limited Taillage pour la fabrication de composants
US12435732B1 (en) 2024-09-19 2025-10-07 Microsoft Technology Licensing, Llc Centrifugal blower housing

Also Published As

Publication number Publication date
WO2012015982A3 (fr) 2012-05-24
WO2012015982A2 (fr) 2012-02-02
US20140290042A1 (en) 2014-10-02
US9655294B2 (en) 2017-05-16

Similar Documents

Publication Publication Date Title
US9655294B2 (en) Method of producing electronics substrate with enhanced direct bonded metal
US9681580B2 (en) Method of producing an enhanced base plate
US10531594B2 (en) Method of producing a liquid cooled coldplate
US9795057B2 (en) Method of producing a liquid cooled coldplate
EP2484190B1 (fr) Plaque froide avec broches
US8938880B2 (en) Method of manufacturing an integrated cold plate for electronics
WO2016187131A1 (fr) Plaque de refroidissement refroidie par liquide
EP2711983B1 (fr) Refroidisseur pour un module à semi-conducteur
US8358000B2 (en) Double side cooled power module with power overlay
US7859846B2 (en) Low thermal resistance power module assembly
JP5052350B2 (ja) マイクロチャネル冷却を備えたヒートシンク
JP6050617B2 (ja) 電源モジュール用冷却装置及びそれに関連する方法
EP1768179B1 (fr) Système de refroidissement d'une puce
CN115084058B (zh) 一种功率半导体器件封装结构
CN101238575A (zh) 散热器及其制造方法
CN210325774U (zh) 液冷散热器
EP3698399A1 (fr) Procédé de préparation d'une plaque de refroidissement refroidie par liquide
CN209029677U (zh) 一种复合热沉、半导体激光器及其叠阵

Legal Events

Date Code Title Description
AS Assignment

Owner name: WOLVERINE TUBE, INC., ALABAMA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LOONG, SY-JENQ;SMITH, DONALD LYNN;REEL/FRAME:026652/0636

Effective date: 20110725

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT

Free format text: SECURITY AGREEMENT;ASSIGNORS:WOLVERINE TUBE, INC.;WOLVERINE JOINING TECHNOLOGIES, LLC;REEL/FRAME:027232/0423

Effective date: 20111028

AS Assignment

Owner name: PNC BANK, NATIONAL ASSOCIATION, PENNSYLVANIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:WOLVERINE TUBE, INC.;REEL/FRAME:031485/0767

Effective date: 20131024

AS Assignment

Owner name: WOLVERINE JOINING TECHNOLOGIES, LLC, ALABAMA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:031554/0920

Effective date: 20131014

Owner name: WOLVERINE TUBE, INC., ALABAMA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:031554/0920

Effective date: 20131014

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION