US20100229917A1 - Solar cell and solar cell module - Google Patents
Solar cell and solar cell module Download PDFInfo
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- US20100229917A1 US20100229917A1 US12/721,353 US72135310A US2010229917A1 US 20100229917 A1 US20100229917 A1 US 20100229917A1 US 72135310 A US72135310 A US 72135310A US 2010229917 A1 US2010229917 A1 US 2010229917A1
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- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000010410 layer Substances 0.000 claims description 98
- 239000011241 protective layer Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910007116 SnPb Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 102
- 229910000679 solder Inorganic materials 0.000 description 60
- 239000000969 carrier Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- -1 region Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F19/85—Protective back sheets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- a solar cell according to an embodiment of the invention is described below in detail with reference to FIGS. 1 to 4 .
- the front surface field layer 120 positioned in the front surface of the substrate 110 is formed by more heavily doping the substrate 110 with impurities (e.g., n-type impurities) of the same conductive type as the substrate 110 than the substrate 110 .
- the impurities of the same conductive type as the substrate 110 may be impurities of a group V element such as P, As, and Sb.
- the movement of carriers (e.g., holes) around the surface of the substrate 110 is prevented or reduced by a potential barrier resulting from a difference between impurity concentrations of the substrate 110 and the front surface field layer 120 .
- a recombination and/or a disappearance of electrons and holes around the front surface of the substrate 110 are prevented or reduced.
- the plurality of solar cells 1 having the same structure may be electrically connected to one another to form a solar cell module for more efficient use of the solar cells 1 .
- the solar cell 1 does not include the first bar for electrically connecting the first solder balls 171 to one another and the second bar for electrically connecting the second solder balls 172 to one another.
- the solar cell module including the plurality of solar cells 1 includes a conductive pattern used to electrically connect the first solder balls 171 of each solar cell 1 to one another and to electrically connect the second solder balls 172 of each solar cell 1 to one another.
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- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Abstract
A solar cell and a solar cell module are disclosed. The solar cell includes a substrate of a first conductive type, a plurality of emitter layers of a second conductive type opposite the first conductive type, a plurality of first conductive members partially connected to the substrate, and a plurality of second conductive members partially connected to each of the plurality of emitter layers.
Description
- This application claims priority to and the benefit of Korean Patent Application No. 10-2009-0020532 filed in the Korean Intellectual Property Office on Mar. 11, 2009, the entire contents of which are incorporated herein by reference.
- 1. Field of the Invention
- Embodiments of the invention relate to a solar cell and a solar cell module.
- 2. Description of the Related Art
- Recently, as existing energy sources such as petroleum and coal are expected to be depleted, interests in alternative energy sources for replacing the existing energy sources are increasing. Among the alternative energy sources, solar cells generating electric energy from solar energy have been particularly spotlighted.
- A silicon solar cell generally includes a substrate and an emitter layer, each of which is formed of a semiconductor, and a plurality of electrodes respectively formed on the substrate and the emitter layer. The semiconductors forming the substrate and the emitter layer have different conductive types, such as a p-type and an n-type. A p-n junction is formed at an interface between the substrate and the emitter layer.
- When light is incident on the solar cell, a plurality of electron-hole pairs are generated in the semiconductors. The electron-hole pairs are separated into electrons and holes by the photovoltaic effect. Thus, the separated electrons move to the n-type semiconductor (e.g., the emitter layer) and the separated holes move to the p-type semiconductor (e.g., the substrate), The electrons and holes are respectively collected by the electrode electrically connected to the emitter layer and the electrode electrically connected to the substrate. The electrodes are connected to one another using electric wires to thereby obtain electric power.
- The electrode connected to the emitter layer and the electrode connected to the substrate may be respectively positioned on an incident surface of the substrate on which light is incident and a surface of the substrate, opposite the incident surface, on which light is not incident. Alternatively, the electrode connected to the emitter layer and the electrode connected to the substrate may be positioned on the surface of the substrate opposite the incident surface.
- When all of the electrodes connected to the emitter layer and the substrate are positioned on the surface of the substrate opposite the incident surface, an incident area of light increases. Hence, efficiency of the solar cell is improved.
- Embodiments of the invention provide a solar cell capable of improving an operational efficiency and a solar cell module including the solar cell.
- In one aspect, there is a solar cell including a substrate of a first conductive type, a plurality of emitter layers of a second conductive type opposite the first conductive type, a plurality of first conductive members partially connected to the substrate, and a plurality of second conductive members partially connected to each of the plurality of emitter layers.
- A first conductive member being an outermost one of the plurality of first conductive members and a second conductive member being an outermost one of the plurality of second conductive members may be positioned on the same line.
- Each of the plurality of first conductive members and each of the plurality of second conductive members may have a ball shape.
- The plurality of emitter layers may be positioned in a surface of the substrate on which light is not incident.
- The solar cell may further include a passivation layer positioned on the plurality of emitter layers.
- The passivation layer may include a plurality of first openings exposing portions of each of the plurality of emitter layers. The plurality of second conductive members may be positioned in the plurality of first openings and may be connected to the exposed portions of each of the plurality of emitter layers exposed through the plurality of first openings.
- The solar cell may further include a plurality of surface field layers that are positioned in the surface of the substrate, on which light is not incident, to be spaced apart from the plurality of emitter layers.
- The plurality of emitter layers and the plurality of surface field layers may extend in the same direction in the surface of the substrate on which light is not incident.
- Ends of the plurality of emitter layers and ends of the plurality of surface field layers may be positioned on the same line.
- The passivation layer may further include a plurality of second openings exposing portions of each of the plurality of surface field layers. The plurality of first conductive members may be positioned in the plurality of second openings and may be connected to the exposed portions of each of the plurality of surface field layers exposed through the plurality of second openings.
- The solar cell may further include a plurality of first electrodes, that are positioned in the plurality of first openings and are positioned between each of the plurality of emitter layers and the plurality of second conductive members, and a plurality of second electrodes, that are positioned in the plurality of second openings and are positioned between each of the plurality of surface field layers and the plurality of first conductive members.
- A first electrode being an outermost one of the plurality of first electrodes and a second electrode being an outermost one of the plurality of second electrodes may be positioned on the same line.
- Each of the plurality of first electrodes and each of the plurality of second electrodes may contain silver (Ag). Each of the plurality of first electrodes and each of the plurality of second electrodes may further contain at least one selected from the group consisting of nickel (Ni), copper (Cu), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof.
- The plurality of first electrodes and the plurality of second electrodes may be formed using at least one of a deposition method, a printing method, an electroplating method, and an electroless plating method.
- Each of the plurality of first openings and each of the plurality of second openings may have a rectangle shape.
- The solar cell may further include a surface field layer of the first conductive type positioned in a surface of the substrate on which light is incident.
- Each of the plurality of first conductive members and each of the plurality of second conductive members may be formed of SnPb-based material or Pb-free material.
- The plurality of first conductive members and the plurality of second conductive members may be formed using a deposition method or an electroplating method.
- The solar cell may further include a plurality of first electrodes positioned between the plurality of first conductive members and the substrate and a plurality of second electrodes positioned between the plurality of second conductive members and each of the plurality of emitter layers.
- The plurality of first electrodes and the plurality of first conductive members may be positioned in the same direction as the plurality of second electrodes and the plurality of second conductive members.
- In another aspect, there is a solar cell module having a plurality of solar cells each including a plurality of surface field layers positioned in a substrate, a plurality of emitter layers positioned in the substrate, a plurality of first conductive members partially connected to each of the plurality of surface field layers, and a plurality of second conductive members partially connected to each of the plurality of emitter layers, first and second protective layers that are positioned on opposite sides of the plurality of solar cells and protect the plurality of solar cells, a transparent member positioned on the first protective layer, and a back sheet underlying the second protective layer, the back sheet having a first electrode pattern part, that contacts the plurality of first conductive members of each of the plurality of solar cells to electrically connect the plurality of first conductive members to one another, and a second electrode pattern part that contacts the plurality of second conductive members of each of the plurality of solar cells to electrically connect the plurality of second conductive members to one another.
- The second protective layer may include a plurality of first openings exposing the plurality of first conductive members of the plurality of solar cells and a plurality of second openings exposing the plurality of second conductive members of the plurality of solar cells. The plurality of first conductive members may contact the first electrode pattern part through the plurality of first openings, and the plurality of second conductive members may contact the second electrode pattern part through the plurality of second openings.
- The first electrode pattern part and the second electrode pattern part may be positioned adjacent to each other and may be connected to each other.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
-
FIG. 1 is a perspective view of a solar cell according to an embodiment of the invention; -
FIG. 2 is a cross-sectional view taken along line II-II ofFIG. 1 ; -
FIG. 3 is a plan view of a back surface of the solar cell shown inFIG. 1 ; -
FIG. 4 is a plan view illustrating a plurality of first and second impurity regions in a back surface of a substrate of a solar cell according to an embodiment of the invention, a plurality of first electrodes on the first impurity regions, and a plurality of second electrodes on the second impurity regions; -
FIG. 5 is a schematic cross-sectional view of a solar cell module according to an embodiment of the invention; and -
FIG. 6 is a cross-sectional view of the solar cell module including one solar cell obtained after laminating the solar cell module shown inFIG. 5 . - The invention will be described more fully hereinafter with reference to the accompanying drawings, in which example embodiments of the inventions are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
- In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals designate like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. Further, it will be understood that when an element such as a layer, film, region, or substrate is referred to as being “entirely” on another element, it may be on the entire surface of the other element and may not be on a portion of an edge of the other element.
- Reference will now be made in detail to embodiments of the invention, examples of which are illustrated in the accompanying drawings.
- A solar cell according to an embodiment of the invention is described below in detail with reference to
FIGS. 1 to 4 . -
FIG. 1 is a perspective view of a solar cell according to an embodiment of the invention.FIG. 2 is a cross-sectional view taken along line II-II ofFIG. 1 .FIG. 3 is a plan view of a back surface of the solar cell shown inFIG. 1 .FIG. 4 is a plan view illustrating a plurality of first and second impurity regions in a back surface of a substrate of a solar cell according to an embodiment of the invention, a plurality of first electrodes on the first impurity regions, and a plurality of second electrodes on the second impurity regions. - As shown in
FIGS. 1 and 2 , a solar cell 1 according to an embodiment of the invention includes a substrate 110, a front surface field layer 120 positioned in a surface (hereinafter, referred to as “a front surface”) of the substrate 110 on which light is incident, an anti-reflection layer 130 positioned on the front surface field layer 120, a plurality of first impurity regions 141 positioned in a surface (hereinafter, referred to as “a back surface”) of the substrate 110, opposite the front surface of the substrate 110, on which the light is not incident, a plurality of second impurity regions 142 that are positioned in the back surface of the substrate 110 to be spaced apart from the plurality of first impurity regions 141, a back passivation layer 150 positioned on the first impurity regions 141 and the second impurity regions 142, a plurality of first electrodes 161 that are positioned on the plurality of first impurity regions 141 and contact the plurality of first impurity regions 141, a plurality of second electrodes 162 that are positioned on the plurality of second impurity regions 142 and contact the plurality of second impurity regions 142, a plurality of first solder balls 171 connected to the plurality of first electrodes 161, and a plurality of second solder balls 172 connected to the plurality of second electrodes 162. - The
substrate 110 is a semiconductor substrate formed of first conductive type silicon, for example, an n-type silicon, though not required. Examples of silicon include crystalline silicon, such as single crystal silicon and polycrystalline silicon, and amorphous silicon. If thesubstrate 110 is of the n-type, thesubstrate 110 may contain impurities of a group V element such as phosphorus (P), arsenic (As), and antimony (Sb). Alternatively, thesubstrate 110 may be of a p-type. If thesubstrate 110 is of the p-type, thesubstrate 110 may contain impurities of a group III element such as boron (B), gallium (Ga), and indium (In). Other semiconductor materials may be used for thesubstrate 110. - The front surface of the
substrate 110 is textured to form a textured surface corresponding to an uneven surface. Hence, a light reflectance of the front surface of thesubstrate 110 is reduced. Further, because a light incident operation and a light reflection operation are many times performed on the textured surface of thesubstrate 110, the light is confined in thesolar cell 1. Hence, a light absorption increases and the efficiency of thesolar cell 1 is improved. A plurality of protrusions of the textured surface may have a non-uniform pyramid structure, and a height of each of the protrusions may be approximately 1 μm to 10 μm. Hence, a light reflectance of the textured surface of the substrate 100 may be reduced to about 11%. - The front
surface field layer 120 positioned in the front surface of thesubstrate 110 is formed by more heavily doping thesubstrate 110 with impurities (e.g., n-type impurities) of the same conductive type as thesubstrate 110 than thesubstrate 110. Thus, the impurities of the same conductive type as thesubstrate 110 may be impurities of a group V element such as P, As, and Sb. Hence, the movement of carriers (e.g., holes) around the surface of thesubstrate 110 is prevented or reduced by a potential barrier resulting from a difference between impurity concentrations of thesubstrate 110 and the frontsurface field layer 120. Thus, a recombination and/or a disappearance of electrons and holes around the front surface of thesubstrate 110 are prevented or reduced. - The
anti-reflection layer 130 on frontsurface field layer 120 is formed of silicon nitride (SiNx) and/or silicon oxide (SiOx). Theanti-reflection layer 130 reduces a reflectance of light incident on thesubstrate 110 and increases a selectivity of a predetermined wavelength band to thereby increase the efficiency of thesolar cell 1. Theanti-reflection layer 130 may have a thickness of about 70 nm to 80 nm. Theanti-reflection layer 130 has a single-layered structure in the embodiment of the invention, but may also have a multi-layered structure such as a double-layered structure. Theanti-reflection layer 130 may be omitted, if desired. - The plurality of
first impurity regions 141 and the plurality ofsecond impurity regions 142 are positioned in the back surface of thesubstrate 110 to be spaced apart from one another. - The plurality of
first impurity regions 141 are spaced apart from one another and extend substantially parallel to one another in a fixed direction. Each of thefirst impurity regions 141 is an impurity region obtained by more heavily doping thesubstrate 110 with impurities (e.g., n-type impurities) of the same conductive type as thesubstrate 110 than thesubstrate 110. Each of thefirst impurity regions 141 serves as a back surface field layer in the same manner as the frontsurface field layer 120. Hence, carriers (e.g., holes) moving to thefirst impurity regions 141 are prevented or reduced from moving to thefirst electrodes 161 by a potential barrier resulting from a difference between impurity concentrations of thesubstrate 110 and thefirst impurity regions 141. Thus, a recombination and/or a disappearance of electrons and holes around thefirst electrodes 161 are prevented or reduced. - The
second impurity regions 142 are separated from thefirst impurity regions 141 and extend substantially parallel to one another in the same direction as an extension direction of thefirst impurity regions 141. Hence, thefirst impurity regions 141 and thesecond impurity regions 142 are alternately positioned in the back surface of thesubstrate 110. - Each of the
second impurity regions 142 is an impurity region obtained by heavily doping thesubstrate 110 with impurities (e.g., p-type impurities) of a second conductive type opposite the first conductive type of thesubstrate 110. Each of thesecond impurity regions 142 serves as an emitter layer, and thus thesubstrate 110 and thesecond impurity regions 142 form a p-n junction. Thus, thesecond impurity regions 142 contain impurities of a group III element such as B, Ga, and In. - A plurality of electron-hole pairs produced by light incident on the
substrate 110 are separated into electrons and holes by a built-in potential difference resulting from the p-n junction between thesubstrate 110 and thesecond impurity regions 142 each serving as the emitter layer. Then, the separated electrons move to the n-type semiconductor, and the separated holes move to the p-type semiconductor. Thus, when thesubstrate 110 is of the n-type and thesecond impurity regions 142 are of the p-type in the embodiment of the invention, the separated electrons move to thefirst impurity regions 141 and the separated holes move to thesecond impurity regions 142. - Because the
substrate 110 and each of thesecond impurity regions 142 form the p-n junction, thesecond impurity regions 142 may be of the n-type if thesubstrate 110 is of the p-type unlike the embodiment of the invention described above. In this case, the separated electrons move to thesecond impurity regions 142 and the separated holes move to thefirst impurity regions 141. - The
back passivation layer 150 on thefirst impurity regions 141 and thesecond impurity regions 142 has a plurality offirst openings 181 exposing a portion of each of thefirst impurity regions 141 and a plurality ofsecond openings 182 exposing a portion of each of thesecond impurity regions 142. Each of the first and 181 and 182 has a rectangle shape. Other shapes may be used. For example, each of the first andsecond openings 181 and 182 may have various shapes such as a circle and an oval.second openings - The
back passivation layer 150 may be formed of silicon nitride (SiNx) and/or silicon oxide (SiOx). Theback passivation layer 150 shows a passivation effect capable converting unstable bonds existing around the surface of thesubstrate 110 into stable bonds to thereby prevent or reduce a recombination and/or a disappearance of carriers moving to the back surface of thesubstrate 110. Further, theback passivation layer 150 reflects light passing through thesubstrate 110 inside thesolar cell 1, so that light incident on thesubstrate 110 is not reflected outside thesolar cell 1. Hence, an amount of light reflected outside thesolar cell 1 is reduced. - The plurality of
first electrodes 161 are positioned on the exposed portions of the plurality offirst impurity regions 141 exposed through the plurality offirst openings 181. Thefirst electrodes 161 are electrically and physically connected to thefirst impurity regions 141. - The plurality of
second electrodes 162 are positioned on the exposed portions of the plurality ofsecond impurity regions 142 exposed through the plurality ofsecond openings 182. Thesecond electrodes 162 are electrically and physically connected to thesecond impurity regions 142. Thus, because thefirst electrodes 161 are positioned along thefirst impurity regions 141 and thesecond electrodes 162 are positioned along thesecond impurity regions 142, the first and 161 and 162 are positioned in the same direction, i.e., an extension direction of the first andsecond electrodes 141 and 142.second impurity regions - The first and
161 and 162 may be formed by depositing a conductive metal material and then patterning the deposited conductive metal material or by directly performing an electroplating method or an electroless plating method. A thermal process is performed on the first andsecond electrodes 161 and 162, that are firstly formed using a deposition method or a plating method, under the hydrogen atmosphere, so that the first andsecond electrodes 161 and 162 and the first andsecond electrodes 141 and 142 form a low resistance ohmic contact. Because each of the firstly formed first andsecond impurity regions 161 and 162 is very thin, it is difficult to bring the first andsecond electrodes 171 and 172 respectively positioned on the very thin first andsecond solder balls 161 and 162 into electrical contact with the very thin first andsecond electrodes 161 and 162. Thus, the electroplating method or the electroless plating method may be performed on the firstly formed first andsecond electrodes 161 and 162 to thereby increase the thickness of each of the firstly formed first andsecond electrodes 161 and 162. In this case, the thickness of each of the first andsecond electrodes 161 and 162 may be approximately 3 μm to 150 μm.second electrodes - The first and
161 and 162 may be formed of silver (Ag) and at least one conductive metal material. Examples of the conductive metal material include at least one selected from the group consisting of nickel (Ni), copper (Cu), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof. Other conductive metal materials may be used. For example, an ohmic contact between thesecond electrodes silicon substrate 110 and aluminum (Al) may be formed using Al as the at least one conductive metal material. - The
first electrodes 161 collect carriers moving to thefirst impurity regions 141 electrically connected to thefirst electrodes 161 to transfer the carriers to thefirst solder balls 171. Thesecond electrodes 162 collect carriers moving to thesecond impurity regions 142 electrically connected to thesecond electrodes 162 to transfer the carriers to thesecond solder balls 172. - In the embodiment of the invention, the plurality of
first solder balls 171 are positioned only on the plurality offirst electrodes 161, and the plurality ofsecond solder balls 172 are positioned only on the plurality ofsecond electrodes 162. The first and 171 and 172 are conductive members formed of a conductive material and may be formed of SnPb-based material. Alternatively, the first andsecond solder balls 171 and 172 may be formed of a material obtained by reducing an amount of Pb contained in a general solder material or Pb-free material obtained by removing Pb from the general solder material, so as to prevent an environmental pollution resulting from Pb.second solder balls - In the embodiment of the invention, the first and
171 and 172 have a ball shape. Other shapes such as a column shape may be used.second solder balls - The first and
171 and 172 are respectively formed on at least a portion of thesecond solder balls first electrode 161 and at least a portion of thesecond electrode 162 using a deposition method or an electroplating method. Hence, the first and 171 and 172 are generally positioned in the first andsecond solder balls 181 and 182.second openings - The plurality of
first solder balls 171 output carriers (e.g., electrons) transferred through the plurality offirst electrodes 161 to the outside, and the plurality ofsecond solder balls 172 output carriers (e.g., holes) transferred through the plurality ofsecond electrodes 162 to the outside. - In the embodiment of the invention, because the first and
141 and 142 may be electrically connected to the first andsecond impurity regions 171 and 172 without the first andsecond solder balls 161 and 162, the first andsecond electrodes 161 and 162 may be omitted. In this case, thesecond electrodes first solder balls 171 are directly connected to thefirst impurity regions 141, and thesecond solder balls 172 are directly connected to thesecond impurity regions 142. Thus, carriers moving to the first and 141 and 142 are collected by the first andsecond impurity regions 171 and 172 and then are output to the outside.second solder balls - As shown in
FIG. 3 , the first and 171 and 172 are used to electrically connect the first andsecond solder balls 141 and 142 to an external device and to perform a point contact in which the first andsecond impurity regions 171 and 172 are partially connected to the first andsecond solder balls 141 and 142 through the first andsecond impurity regions 161 and 162. Hence, a bending of thesecond electrodes substrate 110 resulting from the first and 161 and 162 and the first andsecond electrodes 171 and 172 positioned on the back surface of thesecond solder balls substrate 110 or a bending of thesubstrate 110 resulting from a difference between thermal expansion coefficients between thesubstrate 110 and the 161, 162, 171, and 172 are prevented or reduced.elements - In a solar cell according to a comparative example, a plurality of first electrodes are straightly formed along a plurality of first impurity regions and have a stripe shape, and a plurality of second electrodes are straightly formed along a plurality of second impurity regions and have a stripe shape. In other words, each first electrode is straightly positioned along each first impurity region, and each second electrode is straightly positioned along each second impurity region. Hence, a formation area of each first electrode almost overlaps a formation area of each first impurity region, and a formation area of each second electrode almost overlaps a formation area of each second impurity region.
- On the other hand, in the solar cell according to the embodiment of the invention, the first and
161 and 162 are positioned only in the first andsecond electrodes 181 and 182, and the first andsecond openings 171 and 172 are positioned only in the first andsecond solder balls 181 and 182. Hence, eachsecond openings first electrode 161 and eachfirst solder ball 171 overlap only at an exposed portion of thefirst impurity region 141 exposed through thefirst openings 181, and eachsecond electrode 162 and eachsecond solder ball 172 overlap only at an exposed portion of thesecond impurity region 142 exposed through thesecond openings 182. In other words, the plurality offirst electrodes 161 are positioned on eachfirst impurity region 141 to be spaced apart from one another at a constant distance, and the plurality ofsecond electrodes 162 are positioned on eachsecond impurity region 142 to be spaced apart from one another at a constant distance. Further, the plurality offirst solder balls 171 are positioned on the plurality offirst electrodes 161, and the plurality ofsecond solder balls 172 are positioned on the plurality ofsecond electrodes 162. Hence, formation areas of the first and 161 and 162 and formation areas of the first andsecond electrodes 171 and 172 are greatly reduced, compared with the solar cell according to the comparative example.second solder balls - Accordingly, because the formation areas of the first and
161 and 162 on the back surface of thesecond electrodes substrate 110 are greatly reduced, the weight of the first and 161 and 162 and the weight of the first andsecond electrodes 171 and 172 are greatly reduced, or the bending of thesecond solder balls substrate 110 resulting from the difference between the thermal expansion coefficients between thesubstrate 110 and the 161, 162, 171, and 172 are greatly reduced, compared with the solar cell according to the comparative example. Further, because theelements 171 and 172 are formed instead of a stripe-shaped electrode or a bus bar, a thickness of thesolder balls solar cell 1 is reduced. As a result, the weight of thesolar cell 1 is reduced. - In the embodiment of the invention, the first and
171 and 172 in addition to the first andsecond solder balls 161 and 162 are further formed on the back surface of thesecond electrodes substrate 110, compared with the solar cell according to the comparative example. However, because a sum of the weight of the first and 161 and 162 and the weight of the first andsecond electrodes 171 and 172 is much less than the weight of the electrodes in the comparative example, the bending of thesecond solder balls substrate 110 is prevented or reduced. - The solar cell according to the comparative example includes a first bus bar, that extends in a direction crossing the stripe-shaped first electrodes to connect the stripe-shaped first electrodes to one another, and a second bus bar that extends in a direction crossing the stripe-shaped second electrodes to connect the stripe-shaped second electrodes to one another. The first and second bus bars are generally positioned at an edge of the substrate and are opposite to each other. The first and second bus bars collect all of carriers moving along each first electrode and each second electrode to output the carriers to the outside.
- However, the
solar cell 1 according to the embodiment of the invention does not include a first bar for electrically connecting thefirst solder balls 171 to one another and a second bar for electrically connecting thesecond solder balls 172 to one another. Hence, as shown inFIG. 4 , because the first and 141 and 142 are formed in an area of the substrate 110 (for example, an edge of the substrate 110) for the first and second bus bars, formation areas of the first andsecond impurity regions 141 and 142 increase. As a result, the efficiency of thesecond impurity regions solar cell 1 increases. - Furthermore, because the first and second bus bars are not formed, locations of ends of the first and
141 and 142 are substantially the same as each other. More specifically, as shown insecond impurity regions FIG. 4 , left ends of the first and 141 and 142 are positioned on the same line L1, and right ends of the first andsecond impurity regions 141 and 142 are positioned on the same line L2. Further, a location of an end of the lastsecond impurity regions first electrode 161 in an extension direction of the first electrodes 161 (for example, the leftmost first electrode or the rightmost first electrode in the extension direction of thefirst electrodes 161 inFIG. 4 ) is substantially the same as a location of an end of the lastsecond electrode 162 in an extension direction of the second electrodes 162 (for example, the leftmost second electrode or the rightmost second electrode in the extension direction of thesecond electrodes 162 inFIG. 4 ). In this case, left ends of the first and 161 and 162 are positioned on the same line L11, and right ends of the first andsecond electrodes 161 and 162 are positioned on the same line L21. All of the lines L1, L11, L2, L21 shown insecond electrodes FIG. 4 are lines substantially perpendicular to a transverse direction of thesubstrate 110. Thesolar cell 1 having the above-described structure is a back contact solar cell in which thesecond impurity regions 142, thesecond electrodes 162, and thesecond solder balls 172 are positioned in the back surface of thesubstrate 110 on which light is not incident. An operation of the back contactsolar cell 1 is described below. - When light irradiated to the
solar cell 1 is incident on thesubstrate 110 through theanti-reflection layer 130 and the frontsurface field layer 120, a plurality of electron-hole pairs are generated in thesubstrate 110 by light energy based on the incident light. Further, a reflection loss of light incident on thesubstrate 110 decreases because of the textured surface of thesubstrate 110 and theanti-reflection layer 130, and thus an amount of the light incident on thesubstrate 110 further increases. The electron-hole pairs are separated from one another by the p-n junction between thesubstrate 110 and thesecond impurity regions 142, and the separated electrons move to the n-typefirst impurity regions 141 and the separated holes move to the p-typesecond impurity regions 142. The electrons moving to thefirst impurity regions 141 are collected by thefirst electrodes 161 and then are output to an external device through thefirst solder balls 171, and the holes moving to thesecond impurity regions 142 are collected by thesecond electrodes 162 and then are output to the external device through thesecond solder balls 172. - In the embodiment of the invention, because the first and
161 and 162, which prevent light from being incident on thesecond electrodes substrate 110, are positioned on the back surface of thesubstrate 110, an amount of light incident on thesubstrate 110 increases. Hence, a series resistance of thesolar cell 1 is reduced, and thus the efficiency of thesolar cell 1 is improved. Further, an amount of carriers recombined by the frontsurface field layer 120 and theback passivation layer 150 is reduced, and thus the efficiency of thesolar cell 1 is further improved. - Furthermore, because the
solar cell 1 according to the embodiment of the invention does not include the bus bars, formation locations of the first and 141 and 142 extend to what would be the formation locations of the bus bars. Further, formation locations of thesecond impurity regions first solder balls 171 and thefirst electrodes 161 connected to thefirst impurity regions 141 and formation locations of thesecond solder balls 172 and thesecond electrodes 162 connected to thesecond impurity regions 142 extend. Thus, a generation amount of carriers increases because of an increase in the formation areas of the first and 141 and 142, and also a collection amount of carriers increases because the formation locations of the first andsecond impurity regions 171 and 172 and the formation locations of the first andsecond solder balls 161 and 162 extend. As a result, the efficiency of thesecond electrodes solar cell 1 is further improved. - Although the above-described
solar cell 1 may be individually used, the plurality ofsolar cells 1 having the same structure may be electrically connected to one another to form a solar cell module for more efficient use of thesolar cells 1. As described above, thesolar cell 1 does not include the first bar for electrically connecting thefirst solder balls 171 to one another and the second bar for electrically connecting thesecond solder balls 172 to one another. Thus, the solar cell module including the plurality ofsolar cells 1 includes a conductive pattern used to electrically connect thefirst solder balls 171 of eachsolar cell 1 to one another and to electrically connect thesecond solder balls 172 of eachsolar cell 1 to one another. - A solar cell module according to an embodiment of the invention is described below with reference to
FIGS. 5 and 6 . -
FIG. 5 is a schematic cross-sectional view of a solar cell module according to an embodiment of the invention.FIG. 6 is a cross-sectional view of the solar cell module including one solar cell obtained after laminating the solar cell module shown inFIG. 5 . - As shown in
FIG. 5 , asolar cell module 200 according to an embodiment of the invention includes asolar cell 1, 210 and 220 for protecting theprotective layers solar cell 1, atransparent member 230 on the protective layer 210 (hereinafter, referred to as “upper protective layer”) positioned on a light receiving surface of thesolar cell 1, an insulatinglayer 240 underlying the protective layer 220 (hereinafter, referred to as “lower protective layer”) positioned on a surface, opposite the light receiving surface, on which light is not incident, and aback sheet 250 underlying the insulatinglayer 240. - Although
FIG. 5 illustrates only onesolar cell 1 of thesolar cell module 200, thesolar cell module 200 includes the plurality ofsolar cells 1. The plurality ofsolar cells 1 are arranged in a matrix structure and are connected in series or in parallel to one another. - The upper and lower
210 and 220 prevent corrosion of metal resulting from the moisture penetration and protect theprotective layers solar cell module 200 from an impact. The upper and lower 210 and 220 and theprotective layers solar cell 1 form an integral body when a lamination process is performed in a state where the upper and lower 210 and 220 are respectively positioned on and under theprotective layers solar cell 1. The upper and lower 210 and 220 may be formed of ethylene vinyl acetate (EVA), for example. The lowerprotective layers protective layer 220 has a plurality of 21 and 22 corresponding to a plurality ofopenings first openings 181 and a plurality ofsecond openings 182. - The
transparent member 230 on the upperprotective layer 210 may be formed of a tempered glass having a high transmittance capable of preventing a damage. The tempered glass may be a low iron tempered glass containing a small amount of iron. Thetransparent member 230 may have an embossed inner surface so as to increase a scattering effect of light. - The insulating
layer 240 on theback sheet 250 has a plurality of 41 and 42. The plurality ofopenings openings 41 are positioned at locations corresponding to the plurality ofopenings 21 of the lowerprotective layer 220, and the plurality ofopenings 42 are positioned at locations corresponding to the plurality ofopenings 22 of the lowerprotective layer 220. The insulatinglayer 240 electrically insulates between the lowerprotective layer 220 and theback sheet 250. The insulatinglayer 240 is omitted, if desired. - Thus, the plurality of
41 and 21 substantially overlap the plurality ofopenings openings 181, and the plurality of 42 and 22 substantially overlap the plurality ofopenings openings 182. As a result, the 41 and 21 have substantially the same shape as theopenings openings 181, and the 42 and 22 have substantially the same shape as theopenings openings 182. On the contrary, each of the 41, 21, 42, and 22 may have a stripe shape at locations corresponding to solderopenings 171 and 172 positioned along the correspondingballs 141 and 142. In other words, theimpurity regions 41, 21, 42, and 22 may be positioned on the loweropenings protective layer 220 and the insulatinglayer 240 at locations corresponding to the 141 and 142.impurity regions - The
back sheet 250 prevents moisture or oxygen from penetrating into a back surface of thesolar cell module 200 to protect thesolar cells 1 from an external environment. Theback sheet 250, as shown inFIG. 5 , includes a pattern part 255, i.e., a conductive pattern including a plurality offirst electrode patterns 251 and a plurality ofsecond electrode patterns 252. - A shape of each
first electrode pattern 251 is determined based on a location shape of eachfirst solder ball 171 of thesolar cell 1, and a shape of eachsecond electrode pattern 252 is determined based on a location shape of eachsecond solder ball 172 of thesolar cell 1. - As a result, the
first solder balls 171 contact thefirst electrode patterns 251 passing through the 21 and 41 and are electrically connected to one another through theopenings first electrode patterns 251. Thesecond solder balls 172 contact thesecond electrode patterns 252 passing through the 22 and 42 and are electrically connected to one another through theopenings second electrode patterns 252. - The adjacent first and
251 and 252 are connected to each other. In other words, in plurality ofsecond electrode patterns solar cells 1 positioned on the same row, thefirst electrode patterns 251 corresponding to onesolar cell 1 is connected to thesecond electrode patterns 252 corresponding to asolar cell 1 adjacent to the onesolar cell 1, and thesecond electrode patterns 252 corresponding to the onesolar cell 1 is connected to thefirst electrode patterns 251 corresponding to anothersolar cell 1 adjacent to the onesolar cell 1. For example, thefirst solder balls 171 of a firstsolar cell 1 of two adjacentsolar cells 1 positioned on the same row are electrically connected to thesecond solder balls 172 of a secondsolar cell 1 of the two adjacentsolar cells 1. Further, thesecond solder balls 172 of the firstsolar cell 1 are electrically connected to thefirst solder balls 171 of a thirdsolar cell 1 positioned prior to the firstsolar cell 1, and thefirst solder balls 171 of the secondsolar cell 1 are electrically connected to thesecond solder balls 172 of a fourthsolar cell 1 following the secondsolar cell 1. As a result, thesolar cells 1 arranged in the matrix structure are electrically connected in series to one another. - The pattern part 255 of the
back sheet 250 may be formed in a desired form by attaching a metal thin plate such as copper (Cu) to theback sheet 250 and then patterning the metal thin plate depending on formation locations of the first and 171 and 172.second solder balls - In the
solar cell module 200, carriers transferred by the first and 171 and 172 of eachsecond solder balls solar cell 1 are collected by the pattern part 255, and also the plurality ofsolar cells 1 arranged in the matrix structure are connected in series or in parallel to one another through the pattern part 255. Hence, carriers collected by the plurality ofsolar cells 1 are finally output to an external device. - Although
FIG. 5 illustrates the pattern part 255 positioned inside theback sheet 250, the pattern part 255 may be positioned on theback sheet 250. - The back sheet 50 may have a multi-layered structure including a moisture/oxygen penetrating prevention layer, a chemical corrosion prevention layer, an insulation layer, etc.
- A method for manufacturing the
solar cell module 200 may sequentially include testing the plurality ofsolar cells 1, arranging the testedsolar cells 1 in the matrix structure, disposing the 210, 220, 230, 240, 250, and 1 in fixed order, more particularly successively disposing theelements back sheet 250 including the pattern part 255, the insulatinglayer 240, the lowerprotective layer 220, the plurality ofsolar cells 1, the upperprotective layer 210, and thetransparent member 230 from the bottom of thesolar cell module 200 in the order named, performing a lamination process in a vacuum state to form an integral body of the 210, 220, 230, 240, 250, and 1 (refer toelements FIG. 6 ), performing an edge trimming process to remove an unnecessary portion, testing thesolar cell module 200, and the like. - When a misalignment between the plurality of
solar cells 1 and theback sheet 250 occurs, a bad contact between the 171 and 172 and the pattern part 255 is prevented because of the insulatingsolder balls layer 240. - As above, because the pattern part 255 directly contacting the
171 and 172 is formed in thesolder balls back sheet 250, a distance ranging from the 141 and 142 to the pattern part 255 of theimpurity regions back sheet 250 is greatly reduced to several hundreds of micrometers (μm). Hence, the efficiency of thesolar cell module 200 is improved because of a reduction in a wiring resistance. - Although the explanation was given of an example of the solar cell, in which both the first and
161 and 162 are positioned on the back surface of thesecond electrodes substrate 110, in the embodiments of the invention, the embodiments of the invention may be applied to various solar cells. For example, the embodiments of the invention may be applied to a solar cell in which the plurality offirst electrodes 161 are positioned on the front surface of thesubstrate 110 and the plurality ofsecond electrodes 162 are positioned on the back surface of thesubstrate 110. - Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
Claims (24)
1. A solar cell, comprising:
a substrate of a first conductive type;
a plurality of emitter layers of a second conductive type opposite the first conductive type;
a plurality of first conductive members partially connected to the substrate; and
a plurality of second conductive members partially connected to each of the plurality of emitter layers.
2. The solar cell of claim 1 , wherein a first conductive member being an outermost one of the plurality of first conductive members and a second conductive member being an outermost one of the plurality of second conductive members are positioned on the same line.
3. The solar cell of claim 1 , wherein each of the plurality of first conductive members and each of the plurality of second conductive members have a ball shape.
4. The solar cell of claim 1 , wherein the plurality of emitter layers are positioned in a surface of the substrate on which light is not incident.
5. The solar cell of claim 4 , further comprising a passivation layer positioned on the plurality of emitter layers.
6. The solar cell of claim 5 , wherein the passivation layer comprises a plurality of first openings exposing portions of each of the plurality of emitter layers, and
the plurality of second conductive members are positioned in the plurality of first openings and are connected to the exposed portions of each of the plurality of emitter layers exposed through the plurality of first openings.
7. The solar cell of claim 6 , further comprising a plurality of surface field layers that are positioned in the surface of the substrate, on which light is not incident, to be spaced apart from the plurality of emitter layers.
8. The solar cell of claim 7 , wherein the plurality of emitter layers and the plurality of surface field layers extend in the same direction in the surface of the substrate on which light is not incident.
9. The solar cell of claim 8 , wherein ends of the plurality of emitter layers and ends of the plurality of surface field layers are positioned on the same line.
10. The solar cell of claim 7 , wherein the passivation layer further comprises a plurality of second openings exposing portions of each of the plurality of surface field layers, and
the plurality of first conductive members are positioned in the plurality of second openings and are connected to the exposed portions of each of the plurality of surface field layers exposed through the plurality of second openings.
11. The solar cell of claim 10 , further comprising a plurality of first electrodes, that are positioned in the plurality of first openings and are positioned between each of the plurality of emitter layers and the plurality of second conductive members, and a plurality of second electrodes, that are positioned in the plurality of second openings and are positioned between each of the plurality of surface field layers and the plurality of first conductive members.
12. The solar cell of claim 11 , wherein a first electrode being an outermost one of the plurality of first electrodes and a second electrode being an outermost one of the plurality of second electrodes are positioned on the same line.
13. The solar cell of claim 11 , wherein each of the plurality of first electrodes and each of the plurality of second electrodes contain silver (Ag).
14. The solar cell of claim 13 , wherein each of the plurality of first electrodes and each of the plurality of second electrodes further contain at least one selected from the group consisting of nickel (Ni), copper (Cu), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof.
15. The solar cell of claim 11 , wherein the plurality of first electrodes and the plurality of second electrodes are formed using at least one of a deposition method, a printing method, an electroplating method, and an electroless plating method.
16. The solar cell of claim 10 , wherein each of the plurality of first openings and each of the plurality of second openings have a rectangle shape.
17. The solar cell of claim 1 , further comprising a surface field layer of the first conductive type positioned in a surface of the substrate on which light is incident.
18. The solar cell of claim 1 , wherein each of the plurality of first conductive members and each of the plurality of second conductive members are formed of SnPb-based material or Pb-free material.
19. The solar cell of claim 1 , wherein the plurality of first conductive members and the plurality of second conductive members are formed using a deposition method or an electroplating method.
20. The solar cell of claim 1 , further comprising a plurality of first electrodes positioned between the plurality of first conductive members and the substrate and a plurality of second electrodes positioned between the plurality of second conductive members and each of the plurality of emitter layers.
21. The solar cell of claim 20 , wherein the plurality of first electrodes and the plurality of first conductive members are positioned in the same direction as the plurality of second electrodes and the plurality of second conductive members.
22. A solar cell module, comprising:
a plurality of solar cells each having a plurality of surface field layers positioned in a substrate, a plurality of emitter layers positioned in the substrate, a plurality of first conductive members partially connected to each of the plurality of surface field layers, and a plurality of second conductive members partially connected to each of the plurality of emitter layers;
first and second protective layers that are positioned on opposite sides of the plurality of solar cells and protect the plurality of solar cells;
a transparent member positioned on the first protective layer; and
a back sheet underlying the second protective layer, the back sheet having a first electrode pattern part, that contacts the plurality of first conductive members of each of the plurality of solar cells to electrically connect the plurality of first conductive members to one another, and a second electrode pattern part that contacts the plurality of second conductive members of each of the plurality of solar cells to electrically connect the plurality of second conductive members to one another.
23. The solar cell module of claim 22 , wherein the second protective layer comprises a plurality of first openings exposing the plurality of first conductive members of the plurality of solar cells and a plurality of second openings exposing the plurality of second conductive members of the plurality of solar cells, and
the plurality of first conductive members contact the first electrode pattern part through the plurality of first openings, and the plurality of second conductive members contact the second electrode pattern part through the plurality of second openings.
24. The solar cell module of claim 22 , wherein the first electrode pattern part and the second electrode pattern part are positioned adjacent to each other and are connected to each other.
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| Application Number | Priority Date | Filing Date | Title |
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| US14/341,637 US10784385B2 (en) | 2009-03-11 | 2014-07-25 | Solar cell and solar cell module |
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| KR101948206B1 (en) | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | thin film type solar cell and the fabrication method thereof |
| CN111640802A (en) * | 2020-04-20 | 2020-09-08 | 常州比太黑硅科技有限公司 | HIT battery without back silver electrode and manufacturing method thereof |
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| US12278302B2 (en) * | 2023-06-08 | 2025-04-15 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and method for producing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101135591B1 (en) | 2012-04-19 |
| US20140332060A1 (en) | 2014-11-13 |
| US10784385B2 (en) | 2020-09-22 |
| KR20100102254A (en) | 2010-09-24 |
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