US20070116592A1 - Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content - Google Patents
Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content Download PDFInfo
- Publication number
- US20070116592A1 US20070116592A1 US11/562,050 US56205006A US2007116592A1 US 20070116592 A1 US20070116592 A1 US 20070116592A1 US 56205006 A US56205006 A US 56205006A US 2007116592 A1 US2007116592 A1 US 2007116592A1
- Authority
- US
- United States
- Prior art keywords
- ruthenium
- preform
- pressure
- powders
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910000929 Ru alloy Inorganic materials 0.000 title claims abstract description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 13
- 238000005477 sputtering target Methods 0.000 title claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 10
- 239000001301 oxygen Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 238000001513 hot isostatic pressing Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 150000002739 metals Chemical class 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 5
- 238000003754 machining Methods 0.000 claims abstract description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract 4
- 150000002843 nonmetals Chemical class 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000008240 homogeneous mixture Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 2
- 238000002156 mixing Methods 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000009694 cold isostatic pressing Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0466—Alloys based on noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Definitions
- This invention relates to methods for fabricating ruthenium and ruthenium alloy sputtering targets.
- Sputtering targets for sputtering processes can be prepared from ruthenium and alloys of ruthenium with one or more other components, typically one or more elemental metals or ceramic materials. These other components can be added to ruthenium and ruthenium alloy compositions for sputtering targets to provide specific characteristics to the sputtering target or to the film that is deposited on a substrate in a sputtering process. In some instances, it may desirable to reduce the oxygen content of the composition.
- the invention is a method for fabricating ruthenium and ruthenium alloy sputtering targets having an oxygen content of 200 ppm or less by subjecting ruthenium or ruthenium alloy preforms to hydrogen reduction.
- the hydrogen reduction step is performed after the billet is pressed and before obtaining final density.
- the preform can be machined to form a sputter target after final density has been obtained.
- the invention provides a hydrogen reduction step prior to encapsulation and hot isostatic pressing (HIPing) the perform.
- Ruthenium and ruthenium alloy powders are blended to create a homogenous mixture and then consolidated into a preform or billet that is used for fabricating the sputtering targets.
- the blended powders from which the preform is pressed can include any additional elemental metals, alloys, nonmetallic materials, and ceramic materials, including oxides.
- other components may be added to the ruthenium or ruthenium alloy in amounts that can vary from less than about 1% to more than about 30% by weight of the powder mixture. The specific amount of other components added, if any, depends on the properties desired in the target or film formed from the target. More or less may be used depending on the specific properties being sought.
- elemental metals include any of the metals from the periodic table, including, but not limited to, chromium, cobalt, nickel, and iron. Various alloys of these metals can be used. Nonmetallic and ceramic materials include boron, carbon, silicon, various oxides, and others.
- the homogeneous powder should be consolidated into a preform by cold isostatic pressing (CIPing) or, alternatively, mechanical pressing, followed by hydrogen reduction, encapsulating, hot isostatic pressing (HIPing), and machining.
- Pressures for initial consolidation of the powders normally are in the range of from about 10 to 100 ksi.
- a CIP unit is typically a cylindrical pressure vessel that is large enough to house one or more flexible containers, normally latex or plastic, in which the powders are placed to form the preform.
- the pressure within the pressure vessel can be increased by introduction of a liquid, typically either an oil or water with a rust inhibitor added.
- preforms Once the preforms have been pressed, they should be subjected to hydrogen reduction prior to encapsulation and hot isostatic pressing (HIP) cycles.
- the preform is heated in a hydrogen furnace to reduce oxygen.
- the reduction furnace should be operated at a temperature of from about 500 to 3,800° F.
- pressure will be about 1,000 psi or less, including less than atmospheric pressure.
- the broad temperature and pressure ranges are directed to achieving low oxygen content. Specific conditions within these ranges may be selected depending on particular desired properties in the target or film formed from the target.
- the preforms After the preforms have been heated in the hydrogen reduction atmosphere and the oxygen removed, they should be encapsulated in a deformable metal container.
- the deformable metal container is evacuated and sealed after heating to ensure the removal of any moisture or trapped gases that may be present.
- the deformable metal container will have a geometry that is close to the final material configuration that is desired for the sputtering target.
- the preforms can be subjected to a HIP cycle to obtain the final density for the preform.
- the HIP unit is similar to a CIP unit, except the HIP unit includes resistance-heating elements lining the inner walls of the vessel.
- the pressure is controlled by the introduction of an inert gas.
- the HIP conditions should include a temperature from about 500 to 3,800° F. at a pressure from about 5 to 50 ksi.
- the HIP cycle will be run from about 1 to 24 hours. Thereafter, the dense billet can be machined to form a sputter target.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Sputtering targets of ruthenium, ruthenium alloy, and mixtures thereof with other elemental metals, alloys, nonmetals, or ceramic materials are prepared with low oxygen content of 200 ppm or less by hydrogen reduction of the preform prior to encapsulation, HIPing (hot isostatic pressing), and machining to form a sputter target.
Description
- This application claims priority from provisional application Ser. No. 60/738,945 filed Nov. 22, 2005 for “Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content.”
- This invention relates to methods for fabricating ruthenium and ruthenium alloy sputtering targets.
- Sputtering targets for sputtering processes can be prepared from ruthenium and alloys of ruthenium with one or more other components, typically one or more elemental metals or ceramic materials. These other components can be added to ruthenium and ruthenium alloy compositions for sputtering targets to provide specific characteristics to the sputtering target or to the film that is deposited on a substrate in a sputtering process. In some instances, it may desirable to reduce the oxygen content of the composition.
- The invention is a method for fabricating ruthenium and ruthenium alloy sputtering targets having an oxygen content of 200 ppm or less by subjecting ruthenium or ruthenium alloy preforms to hydrogen reduction. The hydrogen reduction step is performed after the billet is pressed and before obtaining final density. The preform can be machined to form a sputter target after final density has been obtained. Thus, the invention provides a hydrogen reduction step prior to encapsulation and hot isostatic pressing (HIPing) the perform.
- Ruthenium and ruthenium alloy powders are blended to create a homogenous mixture and then consolidated into a preform or billet that is used for fabricating the sputtering targets. The blended powders from which the preform is pressed can include any additional elemental metals, alloys, nonmetallic materials, and ceramic materials, including oxides. Typically, other components may be added to the ruthenium or ruthenium alloy in amounts that can vary from less than about 1% to more than about 30% by weight of the powder mixture. The specific amount of other components added, if any, depends on the properties desired in the target or film formed from the target. More or less may be used depending on the specific properties being sought. Other elemental metals include any of the metals from the periodic table, including, but not limited to, chromium, cobalt, nickel, and iron. Various alloys of these metals can be used. Nonmetallic and ceramic materials include boron, carbon, silicon, various oxides, and others.
- The homogeneous powder should be consolidated into a preform by cold isostatic pressing (CIPing) or, alternatively, mechanical pressing, followed by hydrogen reduction, encapsulating, hot isostatic pressing (HIPing), and machining. Pressures for initial consolidation of the powders normally are in the range of from about 10 to 100 ksi. A CIP unit is typically a cylindrical pressure vessel that is large enough to house one or more flexible containers, normally latex or plastic, in which the powders are placed to form the preform. The pressure within the pressure vessel can be increased by introduction of a liquid, typically either an oil or water with a rust inhibitor added.
- Once the preforms have been pressed, they should be subjected to hydrogen reduction prior to encapsulation and hot isostatic pressing (HIP) cycles. The preform is heated in a hydrogen furnace to reduce oxygen. The reduction furnace should be operated at a temperature of from about 500 to 3,800° F. Typically, pressure will be about 1,000 psi or less, including less than atmospheric pressure. The broad temperature and pressure ranges are directed to achieving low oxygen content. Specific conditions within these ranges may be selected depending on particular desired properties in the target or film formed from the target.
- After the preforms have been heated in the hydrogen reduction atmosphere and the oxygen removed, they should be encapsulated in a deformable metal container. The deformable metal container is evacuated and sealed after heating to ensure the removal of any moisture or trapped gases that may be present. Typically, the deformable metal container will have a geometry that is close to the final material configuration that is desired for the sputtering target.
- Once encapsulated, the preforms can be subjected to a HIP cycle to obtain the final density for the preform. The HIP unit is similar to a CIP unit, except the HIP unit includes resistance-heating elements lining the inner walls of the vessel. The pressure is controlled by the introduction of an inert gas. The HIP conditions should include a temperature from about 500 to 3,800° F. at a pressure from about 5 to 50 ksi. Typically the HIP cycle will be run from about 1 to 24 hours. Thereafter, the dense billet can be machined to form a sputter target.
Claims (13)
1. A method for fabricating preforms for sputtering targets, said method comprising the steps of fabricating a preform from a mixture of powders selected from the group consisting of ruthenium, ruthenium alloy and mixtures thereof, and subjecting the preform to hydrogen reduction.
2. The method of claim 1 wherein the oxygen content of the preform after hydrogen reduction is 200 ppm or less.
3. The method of claim 1 wherein the step of subjecting the preform to hydrogen reduction comprises heating the preform in a hydrogen atmosphere at a temperature of from about 500 to 3,800° F.
4. The method of claim 3 wherein the hydrogen atmosphere is at a pressure of about 1000 psi or less.
5. The method of claim 4 wherein the hydrogen atmosphere is at a pressure less than atmospheric.
6. The method of claim 1 wherein the mixture of powders further comprises additional powders selected from the group consisting of other elemental metals, alloys, nonmetal materials, ceramics, and mixtures thereof.
7. The method of claim 1 wherein the step of fabricating the preform includes the steps of blending precursor powders to provide a homogeneous mixture of powders and forming preforms from the mixture at a pressure of from about 10 to 100 ksi.
8. The method of claim 1 further comprising the steps of encapsulating the preform in a deformable metal canister and hot isostatic pressing the preform.
9. The method of claim 8 wherein the step of hot isostatic pressing the perform is at a temperature from about 500 to 3,800° F. and at a pressure from about 5 to 50 ksi for a period of time of from about 1 to 24 hours.
10. A method for fabricating ruthenium and ruthenium alloy sputtering targets, having an oxygen content of 200 ppm or less, said method comprising the steps of:
a) blending precursor powders to provide a homogeneous mixture, the powders selected from the group consisting of ruthenium, ruthenium alloy, and mixtures thereof;
b) forming preforms of the homogeneous mixture at a pressure from 10 to 100 ksi;
c) heating the preform in a hydrogen atmosphere at a temperature of from about 500 to 3,800° F. and at a pressure of about 1,000 psi or less;
d) encapsulating the perform in a deformable metal canister;
e) hot isostatic pressing the pre-form at a temperature from about 500 to 3,800° F. and at a pressure from about 5 to 50 ksi for a period of time of from about 1 to 24 hours; and
f) machining the pre-form to form a sputter target.
11. The method of claim 10 wherein the ruthenium alloy comprises an alloy of ruthenium and another metal, nonmetal, or ceramic material.
12. The method of claim 10 wherein the precursor powders include in addition to elemental ruthenium or ruthenium alloy or both a powder selected from the group consisting of other elemental metals, alloys, nonmetals, ceramics, and mixtures thereof.
13. The method of claim 10 wherein the preform is heated in a hydrogen atmosphere by placing the preform in a hydrogen reduction furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/562,050 US20070116592A1 (en) | 2005-11-22 | 2006-11-21 | Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73894505P | 2005-11-22 | 2005-11-22 | |
| US11/562,050 US20070116592A1 (en) | 2005-11-22 | 2006-11-21 | Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20070116592A1 true US20070116592A1 (en) | 2007-05-24 |
Family
ID=37946093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/562,050 Abandoned US20070116592A1 (en) | 2005-11-22 | 2006-11-21 | Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070116592A1 (en) |
| WO (1) | WO2007062089A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017111700A1 (en) * | 2015-12-24 | 2017-06-29 | Heraeus Materials Singapore Pte. Ltd. | Sputtering target of ruthenium-containing alloy and production method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090010792A1 (en) * | 2007-07-02 | 2009-01-08 | Heraeus Inc. | Brittle metal alloy sputtering targets and method of fabricating same |
| CN102922231A (en) * | 2012-10-25 | 2013-02-13 | 昆明贵金属研究所 | Method for machining ruthenium and ruthenium alloy target |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030077199A1 (en) * | 2001-09-17 | 2003-04-24 | Michael Sandlin | Refurbishing spent sputtering targets |
| US20040062675A1 (en) * | 2002-06-07 | 2004-04-01 | Wenjun Zhang | Fabrication of ductile intermetallic sputtering targets |
| US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
| US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
| US20050189401A1 (en) * | 2004-02-27 | 2005-09-01 | Howmet Corporation | Method of making sputtering target |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000034563A (en) * | 1998-07-14 | 2000-02-02 | Japan Energy Corp | Method for producing high-purity ruthenium sputtering target and high-purity ruthenium sputtering target |
| JP4503817B2 (en) * | 2000-11-30 | 2010-07-14 | 株式会社東芝 | Sputtering target and thin film |
| US6666901B1 (en) * | 2001-11-08 | 2003-12-23 | Technology Assessment & Transfer, Inc. | Thermal shock resistant quasicrystalline alloy target |
| US20040144204A1 (en) * | 2002-06-24 | 2004-07-29 | Akira Hisano | Airu spattering target and method for preparation thereof |
-
2006
- 2006-11-21 US US11/562,050 patent/US20070116592A1/en not_active Abandoned
- 2006-11-21 WO PCT/US2006/045147 patent/WO2007062089A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
| US20040188249A1 (en) * | 2001-04-11 | 2004-09-30 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal |
| US20030077199A1 (en) * | 2001-09-17 | 2003-04-24 | Michael Sandlin | Refurbishing spent sputtering targets |
| US20040062675A1 (en) * | 2002-06-07 | 2004-04-01 | Wenjun Zhang | Fabrication of ductile intermetallic sputtering targets |
| US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
| US20040208774A1 (en) * | 2002-07-23 | 2004-10-21 | Wenjun Zhang | Fabrication of B/C/N/O/Si doped sputtering targets |
| US20050189401A1 (en) * | 2004-02-27 | 2005-09-01 | Howmet Corporation | Method of making sputtering target |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017111700A1 (en) * | 2015-12-24 | 2017-06-29 | Heraeus Materials Singapore Pte. Ltd. | Sputtering target of ruthenium-containing alloy and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007062089A1 (en) | 2007-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: BODYCOTE IMT, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TYLUS, PAUL;ZICK, DANIEL;HALL, JONATHAN;REEL/FRAME:018811/0458 Effective date: 20070125 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |