US20070069219A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- US20070069219A1 US20070069219A1 US11/429,235 US42923506A US2007069219A1 US 20070069219 A1 US20070069219 A1 US 20070069219A1 US 42923506 A US42923506 A US 42923506A US 2007069219 A1 US2007069219 A1 US 2007069219A1
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- light emitting
- emitting device
- light
- emitting element
- chip
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Definitions
- the present invention relates to light emitting devices and, more particularly, to a light emitting device that can be applied to high power light emitting diodes.
- LEDs light emitting diodes
- LEDs that are characterized by long lifetime, small volume, low heat dissipation, low power consumption, fast response speed and single color light emission are widely used in indicator lights, bill boards, traffic lights, auto lamps, display panels, communication tools, consumer electronics and so on. Accordingly, different packaging techniques are developed for LEDs packaging, which results in different package structures of LEDs.
- FIGS. 1 (A) to 1 (C) show a flip chip packaging process.
- a plurality of conductive bumps 11 is formed on an aluminum substrate 10 .
- an LED chip 12 is attached to the aluminum substrate 10 upside down.
- underfill and package processes are performed and a final package structure is shown in FIG. 1 (C).
- FIGS. 2 (A) to 2 (C) show a wire bonding packaging process.
- an aluminum substrate or ceramic substrate 20 is coated with silver paste 21 .
- a flip chip LED chip device 22 is attached to the substrate and wire bonding process is performed.
- underfill and package processes are performed and a final package structure is shown in FIG. 2 (C).
- the molding compound and the substrate have different expansion factors, deformation and stripping are easy to happen.
- the LED chip is electrically connected to the outside through the aluminum or ceramic substrate, the conductive path is very long, which results in too much heat absorption by the aluminum or ceramic substrate, thereby making the mass production difficult.
- the aluminum or ceramic substrate becomes so weak that it needs to be processed before the reflow process, thereby resulting in high fabrication cost.
- FIGS. 3 (A) to 3 (C) and FIGS. 4 (A) to 4 (C) show two packaging processes which respectively use lead frames 30 and 40 and heat sinks 31 and 41 .
- the heat sinks 31 and 41 located on the lead frames 30 and 40 are respectively coated with silver paste 32 and 42 .
- flip chip LED chip devices 33 and 43 are respectively attached to the lead frames 30 and 40 .
- a wire bonding process is performed.
- the underfill and package processes are performed and final package structures are shown in FIGS. 3 (C) and 4 (C).
- FIGS. 5 (A) to 5 (C) and FIGS. 6 (A) to 6 (C) show two packaging processes which use ceramic substrates and injection molded lead frames. It should be noted that an aluminum substrate must be further attached to the ceramic substrate. Thus, high cost of the ceramic substrate and addition of the aluminum substrate result in high fabrication cost.
- injection molding technique results in high series thermal resistance of light emitting device. Accordingly, the light emitting device can not be used in high power LED package. As described above in FIGS. 4 (A) to 4 (C), there also exists the problem of bad light collecting efficiency.
- a primary objective of the present invention is to provide a thin thickness light emitting device.
- Another objective of the present invention is to provide a light emitting device which can reduce the series thermal resistance.
- a further objective of the present invention is to provide a light emitting device which can reduce the fabrication cost.
- Still another objective of the present invention is to provide a light emitting device which can improve the light collecting efficiency.
- the present invention discloses a light emitting device, at least comprising: a light emitting element with at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
- the light emitting device of the present invention achieves a much simpler light emitting device of thin thickness by combining a light emitting element with a base member which is connected to the power through lead portions of the base member, thereby resulting in short current path and low series thermal resistance and low cost.
- the depth of the recess can be increased to improve the light collecting efficiency.
- FIGS. 1 (A) to 1 (C) are diagrams illustrating a first light emitting diode package structure according to the prior art
- FIGS. 2 (A) to 2 (C) are diagrams illustrating a second light emitting diode package structure according to the prior art
- FIGS. 3 (A) to 3 (C) are diagrams illustrating a third light emitting diode package structure according to the prior art
- FIGS. 4 (A) to 4 (C) are diagrams illustrating a fourth light emitting diode package structure according to the prior art
- FIGS. 5 (A) to 5 (C) are diagrams illustrating a fifth light emitting diode package structure according to the prior art
- FIGS. 6 (A) to 6 (C) are diagrams illustrating a sixth light emitting diode package structure according to the prior art
- FIGS. 7 (A) to 7 (E) are diagrams illustrating detailed structure of a light emitting device according to the present invention.
- FIGS. 8 (A) to 8 (B) are diagrams illustrating structures of a light emitting device according to two other embodiments of the present invention.
- FIGS. 9 (A) to 9 (B) are diagrams respectively illustrating structure of a base member having a deeper recess and structure of a light emitting device comprising such a base member according to the present invention
- FIG. 10 is a side sectional view of a light emitting device according to another embodiment of the present invention.
- FIG. 11 is a plan view of the light emitting device of FIG. 10 ;
- FIG. 12 to 14 are plan views illustrating light emitting devices according to other embodiments of the present invention.
- FIGS. 7 (A) to 7 (E) are diagrams showing detailed structure of a light emitting device according to the present invention.
- the light emitting device of the present invention at least includes a light emitting element 60 (shown in FIG. 7 (A)) and a base member 61 (shown in FIG. 7 (B)) to which the light emitting element 60 can be mounted.
- the light emitting element 60 has at least two electrodes 600 and 601 disposed at the side of the light output surface of the light emitting element 60 for power connection.
- the light emitting element 60 includes at least one light emitting chip 602 and at least one substrate 603 provided with electrodes 600 and 601 for power connection.
- the light emitting chip 602 in a flip chip configuration is mounted to the substrate 603 and electrically connected with the substrate 603 via gold balls, tin balls or any electrically and thermally conductive material.
- the substrate 603 is formed of Si, Al, or C.
- the base member 61 is a lead frame formed of PPA resin, PC thermoplastic material or any insulating material by injection molding or assembly.
- the base member 61 has a recess 610 in which the light emitting element 60 can be received with its light output surface facing toward opening of the recess 610 , the opening of the recess 610 becoming smaller while approaching the light output surface.
- two lead portions 611 and 612 are disposed on the base member 61 to electrically connect electrodes 600 and 601 of the light emitting element 60 .
- the lead portions 611 and 612 are coated with conductive adhesives 613 and 614 to fix the electrodes 600 and 601 to the lead portions 611 and 612 and provide electrical connection between them.
- the conductive adhesives 613 and 614 are formed of silver paste, solder paste or solder paste containing lead.
- the above lead portions and electrodes can also be fixed and electrically connected via gold balls or tin balls by using flip chip technology, or through conductive bonding material by using ultrasonic bonding technology.
- the lead portions 611 and 612 extend from the electrically connecting positions of the light emitting element 60 and the base member 61 to outer edge of the base member 61 for power connection.
- the lead portions are formed of electrically conductive conductor such as Au, Ag, Cu, Sn, Al or the like.
- the light emitting element 60 is attached to the base member 61 in the arrow direction by the conductive adhesives 613 and 614 , thereby forming a structure as shown in FIG. 7 (D). Then, underfill and package processes are performed to fill the recess 610 with sealing member 617 so as to fix the light emitting element 60 to the base member 61 .
- the final structure of the light emitting device is shown in FIG. 7 (E). It should be noted that although the sealing member in FIG. 7 (E) forms a flat plane at the light output surface, it is not limited thereto.
- the sealing member can have a lens shape or the like to improve light collecting efficiency.
- FIG. 7 (E) forms a flat plane at the light output surface
- a light reflecting portion 615 can be disposed in the recess adjacent to the light output surface to reflect the light beam emitted from the light emitting element 60 to walls of the recess 610 , which further reflect the light to form a substantially collimated light beam to improve the light efficiency.
- the light reflecting portion 615 is fixed by the sealing member 617 as described above.
- the light reflecting portion 615 is formed of reflective material by electroplating or assembling.
- a light converting portion 616 is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element 60 , thereby improving light efficiency.
- the light converting portion 616 is fixed by the sealing member 617 as described above and formed of fluorescent converting material by coating.
- the depth of the recess 610 a can be increased to improve light collecting efficiency.
- the light emitting element 60 a is fixed to the base member 61 a by underfill and package.
- the thickness of the light emitting device of the present invention becomes much thinner, thereby reducing the fabrication cost.
- the depth of the recess 610 a can be increased to achieve better light collecting efficiency.
- the present invention proposes another embodiment, as shown in FIG. 10 .
- the surface of the light emitting element 60 b opposite to the light output surface is mounted with a thermal conductor 62 such that the heat generated by the light emitting element 60 b can be dissipated efficiently when the light emitting element 60 b is connected to the power.
- printed circuit board 70 is used to supply power.
- the thermal conductor 62 of a plate shape is formed of Al, Cu, Fe or material having a thermal conductivity of at least 50 W/mK.
- an adhesive layer 63 can be disposed between the thermal conductor 62 and the light emitting element 60 b to fix the light emitting element 60 b to the surface of the thermal conductor 62 .
- the adhesive layer 63 is formed of heat sink paste.
- FIG. 11 is a plan view of the light emitting device in FIG. 10 .
- the light emitting element 60 b comprises a single chip emitting single color.
- the light emitting element 60 b is not limited thereto.
- the light emitting element 60 b could be composed of multiple chips, which outputs single color by light mixing.
- light emitting elements 60 c and 60 d respectively include multiple chips which emit light alternately to output multi-color light source for application.
- the light element could emit ultraviolet.
- the light emitting device of the present invention at least includes a light emitting element having at least two electrodes located at the side of the light output surface thereof and a base member to which the light emitting element can be mounted.
- the light emitting element is received in a recess of the base member with its light output surface facing toward the opening of the recess that gradually decreases while approaching the light output surface and the electrodes of the light emitting elements are electrically connected with lead portions of the base member that extend toward the outer edge of the base member for power connection.
- the present invention achieves a light emitting device of thin thickness, which accordingly has advantages of short current path, low series thermal resistance and low cost.
- the depth of the recess can be increased to improve light collecting efficiency, which is not limited to the depth of 6 mm as in the prior art.
- the light emitting element can be mounted into the recess from the back side of the base member, thereby facilitating the mounting process.
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Abstract
A light emitting device is proposed, which emits light while connected to the power. The light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection. The light emitting device of the present invention has advantages of short current path, low series thermal resistance and low cost. In addition, the depth of the recess can further be increased to improve light collecting efficiency.
Description
- 1. Field of the Invention
- The present invention relates to light emitting devices and, more particularly, to a light emitting device that can be applied to high power light emitting diodes.
- 2. Description of Related Art
- Currently, light emitting diodes (LEDs) that are characterized by long lifetime, small volume, low heat dissipation, low power consumption, fast response speed and single color light emission are widely used in indicator lights, bill boards, traffic lights, auto lamps, display panels, communication tools, consumer electronics and so on. Accordingly, different packaging techniques are developed for LEDs packaging, which results in different package structures of LEDs.
- FIGS. 1(A) to 1(C) show a flip chip packaging process. As shown in
FIG. 1 (A), a plurality ofconductive bumps 11 is formed on analuminum substrate 10. Then, as shown inFIG. 1 (B), anLED chip 12 is attached to thealuminum substrate 10 upside down. Finally, underfill and package processes are performed and a final package structure is shown inFIG. 1 (C). - FIGS. 2(A) to 2(C) show a wire bonding packaging process. As shown in
FIG. 2 (A), an aluminum substrate orceramic substrate 20 is coated withsilver paste 21. Then, as shown inFIG. 2 (B), a flip chipLED chip device 22 is attached to the substrate and wire bonding process is performed. Subsequently, underfill and package processes are performed and a final package structure is shown inFIG. 2 (C). - In the above two packaging processes, because the molding compound and the substrate have different expansion factors, deformation and stripping are easy to happen. In addition, since the LED chip is electrically connected to the outside through the aluminum or ceramic substrate, the conductive path is very long, which results in too much heat absorption by the aluminum or ceramic substrate, thereby making the mass production difficult. Furthermore, if several chip products are applied to the aluminum or ceramic substrate, the aluminum or ceramic substrate becomes so weak that it needs to be processed before the reflow process, thereby resulting in high fabrication cost.
- FIGS. 3(A) to 3(C) and FIGS. 4(A) to 4(C) show two packaging processes which respectively use
30 and 40 andlead frames 31 and 41. As shown in FIGS. 3(A) and 4(A), theheat sinks 31 and 41 located on theheat sinks 30 and 40 are respectively coated withlead frames 32 and 42. As shown in FIGS. 3(B) and 4(B), flip chipsilver paste 33 and 43 are respectively attached to theLED chip devices 30 and 40. Afterwards, a wire bonding process is performed. Subsequently, the underfill and package processes are performed and final package structures are shown in FIGS. 3(C) and 4(C).lead frames - In the above two packaging processes, high series thermal resistance leads to low reliability. Further, since the stack technique is used in the above two packaging processes, the packaged products become very thick. To facilitate processes that are performed from the front side of the package structure, the depth of the recess must be shallow (as shown in FIGS. 4(A) to 4(C)). However, such a shallow recess will affect light collecting efficiency.
- FIGS. 5(A) to 5(C) and FIGS. 6(A) to 6(C) show two packaging processes which use ceramic substrates and injection molded lead frames. It should be noted that an aluminum substrate must be further attached to the ceramic substrate. Thus, high cost of the ceramic substrate and addition of the aluminum substrate result in high fabrication cost. In addition, as shown in FIGS. 6(A) to 6(C), injection molding technique results in high series thermal resistance of light emitting device. Accordingly, the light emitting device can not be used in high power LED package. As described above in FIGS. 4(A) to 4(C), there also exists the problem of bad light collecting efficiency.
- Accordingly, there is a need to develop a low thickness LED package structure which has low series thermal resistance and low packaging and application cost and can improve light collecting efficiency.
- According to the above defects, a primary objective of the present invention is to provide a thin thickness light emitting device.
- Another objective of the present invention is to provide a light emitting device which can reduce the series thermal resistance.
- A further objective of the present invention is to provide a light emitting device which can reduce the fabrication cost.
- Still another objective of the present invention is to provide a light emitting device which can improve the light collecting efficiency.
- To achieve the above and other objectives, the present invention discloses a light emitting device, at least comprising: a light emitting element with at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
- Compared with the prior art, the light emitting device of the present invention achieves a much simpler light emitting device of thin thickness by combining a light emitting element with a base member which is connected to the power through lead portions of the base member, thereby resulting in short current path and low series thermal resistance and low cost. In addition, the depth of the recess can be increased to improve the light collecting efficiency.
- FIGS. 1(A) to 1(C) are diagrams illustrating a first light emitting diode package structure according to the prior art;
- FIGS. 2(A) to 2(C) are diagrams illustrating a second light emitting diode package structure according to the prior art;
- FIGS. 3(A) to 3(C) are diagrams illustrating a third light emitting diode package structure according to the prior art;
- FIGS. 4(A) to 4(C) are diagrams illustrating a fourth light emitting diode package structure according to the prior art;
- FIGS. 5(A) to 5(C) are diagrams illustrating a fifth light emitting diode package structure according to the prior art;
- FIGS. 6(A) to 6(C) are diagrams illustrating a sixth light emitting diode package structure according to the prior art;
- FIGS. 7(A) to 7(E) are diagrams illustrating detailed structure of a light emitting device according to the present invention;
- FIGS. 8(A) to 8(B) are diagrams illustrating structures of a light emitting device according to two other embodiments of the present invention;
- FIGS. 9(A) to 9(B) are diagrams respectively illustrating structure of a base member having a deeper recess and structure of a light emitting device comprising such a base member according to the present invention;
-
FIG. 10 is a side sectional view of a light emitting device according to another embodiment of the present invention; -
FIG. 11 is a plan view of the light emitting device ofFIG. 10 ; and -
FIG. 12 to 14 are plan views illustrating light emitting devices according to other embodiments of the present invention. - Hereunder, embodiments of the present invention will be described in full detail with reference to the accompanying drawings.
- FIGS. 7(A) to 7(E) are diagrams showing detailed structure of a light emitting device according to the present invention. The light emitting device of the present invention at least includes a light emitting element 60 (shown in
FIG. 7 (A)) and a base member 61 (shown inFIG. 7 (B)) to which thelight emitting element 60 can be mounted. - As shown in
FIG. 7 (A), thelight emitting element 60 has at least two 600 and 601 disposed at the side of the light output surface of theelectrodes light emitting element 60 for power connection. Preferably, thelight emitting element 60 includes at least onelight emitting chip 602 and at least onesubstrate 603 provided with 600 and 601 for power connection. Theelectrodes light emitting chip 602 in a flip chip configuration is mounted to thesubstrate 603 and electrically connected with thesubstrate 603 via gold balls, tin balls or any electrically and thermally conductive material. Preferably, thesubstrate 603 is formed of Si, Al, or C. - As shown in
FIG. 7 (B), thebase member 61 is a lead frame formed of PPA resin, PC thermoplastic material or any insulating material by injection molding or assembly. Thebase member 61 has arecess 610 in which thelight emitting element 60 can be received with its light output surface facing toward opening of therecess 610, the opening of therecess 610 becoming smaller while approaching the light output surface. In addition, two 611 and 612 are disposed on thelead portions base member 61 to electrically connect 600 and 601 of theelectrodes light emitting element 60. In the present embodiment, the 611 and 612 are coated withlead portions 613 and 614 to fix theconductive adhesives 600 and 601 to theelectrodes 611 and 612 and provide electrical connection between them. Preferably, thelead portions 613 and 614 are formed of silver paste, solder paste or solder paste containing lead. The above lead portions and electrodes can also be fixed and electrically connected via gold balls or tin balls by using flip chip technology, or through conductive bonding material by using ultrasonic bonding technology. Theconductive adhesives 611 and 612 extend from the electrically connecting positions of thelead portions light emitting element 60 and thebase member 61 to outer edge of thebase member 61 for power connection. The lead portions are formed of electrically conductive conductor such as Au, Ag, Cu, Sn, Al or the like. - As shown in
FIG. 7 (C), thelight emitting element 60 is attached to thebase member 61 in the arrow direction by the 613 and 614, thereby forming a structure as shown inconductive adhesives FIG. 7 (D). Then, underfill and package processes are performed to fill therecess 610 with sealingmember 617 so as to fix thelight emitting element 60 to thebase member 61. The final structure of the light emitting device is shown inFIG. 7 (E). It should be noted that although the sealing member inFIG. 7 (E) forms a flat plane at the light output surface, it is not limited thereto. The sealing member can have a lens shape or the like to improve light collecting efficiency. In addition, as shown inFIG. 8 (A), alight reflecting portion 615 can be disposed in the recess adjacent to the light output surface to reflect the light beam emitted from thelight emitting element 60 to walls of therecess 610, which further reflect the light to form a substantially collimated light beam to improve the light efficiency. Thelight reflecting portion 615 is fixed by the sealingmember 617 as described above. Preferably, thelight reflecting portion 615 is formed of reflective material by electroplating or assembling. - As shown in
FIG. 8 (B), alight converting portion 616 is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from thelight emitting element 60, thereby improving light efficiency. Thelight converting portion 616 is fixed by the sealingmember 617 as described above and formed of fluorescent converting material by coating. - As shown in
FIG. 9 (A), since thebase member 61 a has a thin thickness, the depth of therecess 610 a can be increased to improve light collecting efficiency. As shown inFIG. 9 (B), thelight emitting element 60 a is fixed to thebase member 61 a by underfill and package. Thus, compared with the prior art, the thickness of the light emitting device of the present invention becomes much thinner, thereby reducing the fabrication cost. On the other hand, even if the light emitting device of the present invention has same thickness as that of the prior art, the depth of therecess 610 a can be increased to achieve better light collecting efficiency. - To solve the heat dissipating problem of the light emitting device, the present invention proposes another embodiment, as shown in
FIG. 10 . The surface of thelight emitting element 60 b opposite to the light output surface is mounted with athermal conductor 62 such that the heat generated by thelight emitting element 60 b can be dissipated efficiently when thelight emitting element 60 b is connected to the power. InFIG. 10 , printedcircuit board 70 is used to supply power. Preferably, thethermal conductor 62 of a plate shape is formed of Al, Cu, Fe or material having a thermal conductivity of at least 50 W/mK. Furthermore, anadhesive layer 63 can be disposed between thethermal conductor 62 and thelight emitting element 60 b to fix thelight emitting element 60 b to the surface of thethermal conductor 62. Preferably, theadhesive layer 63 is formed of heat sink paste. Thus, by separating the thermally conductive structure from the electrically conductive structure, the present invention decreases the conductive path, thereby decreasing series thermal resistance and increasing reliability of products. -
FIG. 11 is a plan view of the light emitting device inFIG. 10 . As shown inFIG. 11 , thelight emitting element 60 b comprises a single chip emitting single color. However, thelight emitting element 60 b is not limited thereto. As shown inFIG. 12 , thelight emitting element 60 b could be composed of multiple chips, which outputs single color by light mixing. Alternatively, as shown in FIGS. 13 and 14, 60 c and 60 d respectively include multiple chips which emit light alternately to output multi-color light source for application. In addition, the light element could emit ultraviolet.light emitting elements - Therefore, the light emitting device of the present invention at least includes a light emitting element having at least two electrodes located at the side of the light output surface thereof and a base member to which the light emitting element can be mounted. Therein, the light emitting element is received in a recess of the base member with its light output surface facing toward the opening of the recess that gradually decreases while approaching the light output surface and the electrodes of the light emitting elements are electrically connected with lead portions of the base member that extend toward the outer edge of the base member for power connection. As a result, the present invention achieves a light emitting device of thin thickness, which accordingly has advantages of short current path, low series thermal resistance and low cost. In addition, the depth of the recess can be increased to improve light collecting efficiency, which is not limited to the depth of 6 mm as in the prior art. Further, compared with the prior art that only can mount the light emitting element from the front side of the base member, since a hollow base member is used in the present invention, the light emitting element can be mounted into the recess from the back side of the base member, thereby facilitating the mounting process.
- The invention has been described using exemplary preferred embodiments. However, it is to be understood that the scope of the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements. The scope of the claims, therefore, should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (60)
1. A light emitting device, at least comprising:
a light emitting element having at least two electrodes disposed at a side of a light output surface thereof;
a base member comprising a recess and a plurality of lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward an opening of the recess that converges while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
2. The light emitting device of claim 1 , wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
3. The light emitting device of claim 1 or 2 , wherein the light emitting element is selected from the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
4. The light emitting device of claim 2 , wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
5. The light emitting device of claim 2 , wherein the light emitting chip is an LED chip.
6. The light emitting device of claim 2 , wherein the substrate is selected from the group consisting of Si, Al and C.
7. The light emitting device of claim 1 , wherein the base member is a lead frame.
8. The light emitting device of claim 7 , wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
9. The light emitting device of claim 7 , wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
10. The light emitting device of claim 1 , wherein a light reflecting portion is further disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency.
11. The light emitting device of claim 10 , wherein the light reflecting portion is formed of reflective material by one of the methods consisting of electroplating and assembling.
12. The light emitting device of claim 1 , wherein a light converting portion is further disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element so as to improve light efficiency.
13. The light emitting device of claim 12 , wherein the light converting portion is formed of fluorescent converting material by coating.
14. The light emitting device of claim 10 , wherein the recess is filled with sealing member to fix the light reflecting portion and the light emitting element to the base member.
15. The light emitting device of claim 12 , wherein the recess is filled with sealing member to fix the light converting portion and the light emitting element to the base member.
16. The light emitting device of claim 15 , wherein the sealing member further forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
17. The light emitting device of claim 1 , wherein the lead portions are formed of electrically conductive conductor.
18. The light emitting device of claim 17 , wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
19. The light emitting device of claim 1 or 17 , wherein the lead portions are electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
20. The light emitting device of claim 19 , wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
21. The light emitting device of claim 1 further includes a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
22. The light emitting device of claim 21 , wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
23. The light emitting device of claim 21 , wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
24. The light emitting device of claim 23 , wherein the adhesive layer is formed of heat sink paste.
25. A light emitting device, comprising:
a light emitting element having at least two electrodes disposed at the side of the light output surface thereof;
a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light reflecting portion is disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency, the recess being filled with sealing member to fix the light reflecting portion and the light emitting element to the base member; and
a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
26. The light emitting device of claim 25 , wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
27. The light emitting device of claim 25 or 26 , wherein the light emitting element comprises one of the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
28. The light emitting device of claim 26 , wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
29. The light emitting device of claim 26 or 8 , wherein the light emitting chip is an LED chip.
30. The light emitting device of claim 26 , wherein the substrate is made of one of the group consisting of Si, Al and C.
31. The light emitting device of claim 25 , wherein the base member is a lead frame.
32. The light emitting device of claim 31 , wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
33. The light emitting device of claim 31 or 32 , wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
34. The light emitting device of claim 25 , wherein the lead portions are formed of electrically conductive conductor.
35. The light emitting device of claim 34 , wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
36. The light emitting device of claim 25 or 34 , wherein the lead portions are further electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
37. The light emitting device of claim 36 , wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
38. The light emitting device of claim 25 , wherein the sealing member forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
39. The light emitting device of claim 25 , wherein light reflecting portion is formed of reflective material by one of the methods consisting of electroplating and assembling.
40. The light emitting device of claim 25 , wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
41. The light emitting device of claim 25 , wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
42. The light emitting device of claim 41 , wherein the adhesive layer is formed of heat sink paste.
43. A light emitting device, comprising:
a light emitting element with at least two electrodes disposed at the side of the light output surface thereof;
a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light converting portion is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element so as to improve light efficiency, the recess being filled with sealing member to fix the light converting portion and the light emitting element to the base member; and
a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
44. The light emitting device of claim 43 , wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
45. The light emitting device of claim 43 , wherein the light emitting element comprises one of the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
46. The light emitting device of claim 44 , wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
47. The light emitting device of claim 44 , wherein the light emitting chip is an LED chip.
48. The light emitting device of claim 44 , wherein the substrate is made of one of the group consisting of Si, Al and C.
49. The light emitting device of claim 43 , wherein the substrate is a lead frame.
50. The light emitting device of claim 49 , wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
51. The light emitting device of claim 49 , wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
52. The light emitting device of claim 43 , wherein the lead portions are formed of electrically conductive conductor.
53. The light emitting device of claim 52 , wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
54. The light emitting device of claim 43 or 52 , wherein the lead portions are electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
55. The light emitting device of claim 54 , wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
56. The light emitting device of claim 43 , wherein the sealing member further forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
57. The light emitting device of claim 43 , wherein the light converting portion is formed of fluorescent converting material by coating.
58. The light emitting device of claim 43 , wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
59. The light emitting device of claim 43 , wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
60. The light emitting device of claim 59 , wherein the adhesive layer is formed of heat sink paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/487,651 US8017964B2 (en) | 2005-09-28 | 2009-06-19 | Light emitting device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094133671 | 2005-09-28 | ||
| TW094133671A TWI274430B (en) | 2005-09-28 | 2005-09-28 | Light emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/487,651 Division US8017964B2 (en) | 2005-09-28 | 2009-06-19 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20070069219A1 true US20070069219A1 (en) | 2007-03-29 |
Family
ID=37832775
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/429,235 Abandoned US20070069219A1 (en) | 2005-09-28 | 2006-05-08 | Light emitting device |
| US12/487,651 Active US8017964B2 (en) | 2005-09-28 | 2009-06-19 | Light emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/487,651 Active US8017964B2 (en) | 2005-09-28 | 2009-06-19 | Light emitting device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20070069219A1 (en) |
| JP (1) | JP4825095B2 (en) |
| KR (1) | KR100863612B1 (en) |
| DE (1) | DE102006038099A1 (en) |
| TW (1) | TWI274430B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321778A1 (en) * | 2008-06-30 | 2009-12-31 | Advanced Optoelectronic Technology, Inc. | Flip-chip light emitting diode and method for fabricating the same |
| WO2010074371A1 (en) * | 2008-12-26 | 2010-07-01 | 루미마이크로 주식회사 | Chip-on-board led package and manufacturing method thereof |
| US20100314655A1 (en) * | 2009-03-02 | 2010-12-16 | Thompson Joseph B | Light Emitting Assemblies and Portions Thereof |
| US20110175119A1 (en) * | 2010-01-15 | 2011-07-21 | Kim Deung Kwan | Light emitting apparatus and lighting system |
| US20120133268A1 (en) * | 2010-11-30 | 2012-05-31 | Jon-Fwu Hwu | Airtight multi-layer array type led |
| US8816375B2 (en) | 2010-06-10 | 2014-08-26 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component |
| CN111584471A (en) * | 2020-05-12 | 2020-08-25 | 深圳雷曼光电科技股份有限公司 | Display screen and method of making the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008154952A1 (en) * | 2007-06-18 | 2008-12-24 | Osram Gesellschaft mit beschränkter Haftung | Electronic component and method for the production of an electronic component |
| KR100937136B1 (en) * | 2007-12-24 | 2010-01-18 | (주)루미브라이트 | Light Emitting Diode Module Using Lead Frame Modulated Multiple Packages |
| TWI483418B (en) | 2009-04-09 | 2015-05-01 | 隆達電子股份有限公司 | Light emitting diode packaging method |
| KR101028243B1 (en) * | 2010-04-01 | 2011-04-11 | 엘지이노텍 주식회사 | Light emitting module |
| KR101037508B1 (en) * | 2010-03-25 | 2011-05-26 | 안복만 | LED mounting circuit board and manufacturing method thereof |
| TWI414714B (en) | 2011-04-15 | 2013-11-11 | Lextar Electronics Corp | Light emitting diode cup light |
| CN102588762A (en) * | 2011-01-06 | 2012-07-18 | 隆达电子股份有限公司 | LED Cup Light |
| CN102509761A (en) * | 2012-01-04 | 2012-06-20 | 日月光半导体制造股份有限公司 | Chip package |
| JP7231809B2 (en) * | 2018-06-05 | 2023-03-02 | 日亜化学工業株式会社 | light emitting device |
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- 2006-05-08 US US11/429,235 patent/US20070069219A1/en not_active Abandoned
- 2006-08-14 DE DE102006038099A patent/DE102006038099A1/en not_active Withdrawn
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| US7276739B2 (en) * | 2004-03-11 | 2007-10-02 | Chen-Lun Hsin Chen | Low thermal resistance light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090321778A1 (en) * | 2008-06-30 | 2009-12-31 | Advanced Optoelectronic Technology, Inc. | Flip-chip light emitting diode and method for fabricating the same |
| WO2010074371A1 (en) * | 2008-12-26 | 2010-07-01 | 루미마이크로 주식회사 | Chip-on-board led package and manufacturing method thereof |
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| US20100314655A1 (en) * | 2009-03-02 | 2010-12-16 | Thompson Joseph B | Light Emitting Assemblies and Portions Thereof |
| US8269248B2 (en) * | 2009-03-02 | 2012-09-18 | Thompson Joseph B | Light emitting assemblies and portions thereof |
| US20110175119A1 (en) * | 2010-01-15 | 2011-07-21 | Kim Deung Kwan | Light emitting apparatus and lighting system |
| US8816375B2 (en) | 2010-06-10 | 2014-08-26 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component |
| US20120133268A1 (en) * | 2010-11-30 | 2012-05-31 | Jon-Fwu Hwu | Airtight multi-layer array type led |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20070035951A (en) | 2007-04-02 |
| TWI274430B (en) | 2007-02-21 |
| US8017964B2 (en) | 2011-09-13 |
| JP2007096320A (en) | 2007-04-12 |
| JP4825095B2 (en) | 2011-11-30 |
| DE102006038099A1 (en) | 2007-03-29 |
| KR100863612B1 (en) | 2008-10-15 |
| TW200713635A (en) | 2007-04-01 |
| US20090250717A1 (en) | 2009-10-08 |
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