[go: up one dir, main page]

US20070069219A1 - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
US20070069219A1
US20070069219A1 US11/429,235 US42923506A US2007069219A1 US 20070069219 A1 US20070069219 A1 US 20070069219A1 US 42923506 A US42923506 A US 42923506A US 2007069219 A1 US2007069219 A1 US 2007069219A1
Authority
US
United States
Prior art keywords
light emitting
emitting device
light
emitting element
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/429,235
Inventor
Ming-Te Lin
Ming-Yao Lin
Chia-Chang Kuo
Sheng-Pan Huang
Wen-Yung Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrial Technology Research Institute ITRI
Original Assignee
Industrial Technology Research Institute ITRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrial Technology Research Institute ITRI filed Critical Industrial Technology Research Institute ITRI
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE reassignment INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUANG, SHENG-PAN, KUO, CHIA-CHANG, LIN, MING-TE, LIN, MING-YAO, YEH, WEN-YUNG
Publication of US20070069219A1 publication Critical patent/US20070069219A1/en
Priority to US12/487,651 priority Critical patent/US8017964B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Definitions

  • the present invention relates to light emitting devices and, more particularly, to a light emitting device that can be applied to high power light emitting diodes.
  • LEDs light emitting diodes
  • LEDs that are characterized by long lifetime, small volume, low heat dissipation, low power consumption, fast response speed and single color light emission are widely used in indicator lights, bill boards, traffic lights, auto lamps, display panels, communication tools, consumer electronics and so on. Accordingly, different packaging techniques are developed for LEDs packaging, which results in different package structures of LEDs.
  • FIGS. 1 (A) to 1 (C) show a flip chip packaging process.
  • a plurality of conductive bumps 11 is formed on an aluminum substrate 10 .
  • an LED chip 12 is attached to the aluminum substrate 10 upside down.
  • underfill and package processes are performed and a final package structure is shown in FIG. 1 (C).
  • FIGS. 2 (A) to 2 (C) show a wire bonding packaging process.
  • an aluminum substrate or ceramic substrate 20 is coated with silver paste 21 .
  • a flip chip LED chip device 22 is attached to the substrate and wire bonding process is performed.
  • underfill and package processes are performed and a final package structure is shown in FIG. 2 (C).
  • the molding compound and the substrate have different expansion factors, deformation and stripping are easy to happen.
  • the LED chip is electrically connected to the outside through the aluminum or ceramic substrate, the conductive path is very long, which results in too much heat absorption by the aluminum or ceramic substrate, thereby making the mass production difficult.
  • the aluminum or ceramic substrate becomes so weak that it needs to be processed before the reflow process, thereby resulting in high fabrication cost.
  • FIGS. 3 (A) to 3 (C) and FIGS. 4 (A) to 4 (C) show two packaging processes which respectively use lead frames 30 and 40 and heat sinks 31 and 41 .
  • the heat sinks 31 and 41 located on the lead frames 30 and 40 are respectively coated with silver paste 32 and 42 .
  • flip chip LED chip devices 33 and 43 are respectively attached to the lead frames 30 and 40 .
  • a wire bonding process is performed.
  • the underfill and package processes are performed and final package structures are shown in FIGS. 3 (C) and 4 (C).
  • FIGS. 5 (A) to 5 (C) and FIGS. 6 (A) to 6 (C) show two packaging processes which use ceramic substrates and injection molded lead frames. It should be noted that an aluminum substrate must be further attached to the ceramic substrate. Thus, high cost of the ceramic substrate and addition of the aluminum substrate result in high fabrication cost.
  • injection molding technique results in high series thermal resistance of light emitting device. Accordingly, the light emitting device can not be used in high power LED package. As described above in FIGS. 4 (A) to 4 (C), there also exists the problem of bad light collecting efficiency.
  • a primary objective of the present invention is to provide a thin thickness light emitting device.
  • Another objective of the present invention is to provide a light emitting device which can reduce the series thermal resistance.
  • a further objective of the present invention is to provide a light emitting device which can reduce the fabrication cost.
  • Still another objective of the present invention is to provide a light emitting device which can improve the light collecting efficiency.
  • the present invention discloses a light emitting device, at least comprising: a light emitting element with at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
  • the light emitting device of the present invention achieves a much simpler light emitting device of thin thickness by combining a light emitting element with a base member which is connected to the power through lead portions of the base member, thereby resulting in short current path and low series thermal resistance and low cost.
  • the depth of the recess can be increased to improve the light collecting efficiency.
  • FIGS. 1 (A) to 1 (C) are diagrams illustrating a first light emitting diode package structure according to the prior art
  • FIGS. 2 (A) to 2 (C) are diagrams illustrating a second light emitting diode package structure according to the prior art
  • FIGS. 3 (A) to 3 (C) are diagrams illustrating a third light emitting diode package structure according to the prior art
  • FIGS. 4 (A) to 4 (C) are diagrams illustrating a fourth light emitting diode package structure according to the prior art
  • FIGS. 5 (A) to 5 (C) are diagrams illustrating a fifth light emitting diode package structure according to the prior art
  • FIGS. 6 (A) to 6 (C) are diagrams illustrating a sixth light emitting diode package structure according to the prior art
  • FIGS. 7 (A) to 7 (E) are diagrams illustrating detailed structure of a light emitting device according to the present invention.
  • FIGS. 8 (A) to 8 (B) are diagrams illustrating structures of a light emitting device according to two other embodiments of the present invention.
  • FIGS. 9 (A) to 9 (B) are diagrams respectively illustrating structure of a base member having a deeper recess and structure of a light emitting device comprising such a base member according to the present invention
  • FIG. 10 is a side sectional view of a light emitting device according to another embodiment of the present invention.
  • FIG. 11 is a plan view of the light emitting device of FIG. 10 ;
  • FIG. 12 to 14 are plan views illustrating light emitting devices according to other embodiments of the present invention.
  • FIGS. 7 (A) to 7 (E) are diagrams showing detailed structure of a light emitting device according to the present invention.
  • the light emitting device of the present invention at least includes a light emitting element 60 (shown in FIG. 7 (A)) and a base member 61 (shown in FIG. 7 (B)) to which the light emitting element 60 can be mounted.
  • the light emitting element 60 has at least two electrodes 600 and 601 disposed at the side of the light output surface of the light emitting element 60 for power connection.
  • the light emitting element 60 includes at least one light emitting chip 602 and at least one substrate 603 provided with electrodes 600 and 601 for power connection.
  • the light emitting chip 602 in a flip chip configuration is mounted to the substrate 603 and electrically connected with the substrate 603 via gold balls, tin balls or any electrically and thermally conductive material.
  • the substrate 603 is formed of Si, Al, or C.
  • the base member 61 is a lead frame formed of PPA resin, PC thermoplastic material or any insulating material by injection molding or assembly.
  • the base member 61 has a recess 610 in which the light emitting element 60 can be received with its light output surface facing toward opening of the recess 610 , the opening of the recess 610 becoming smaller while approaching the light output surface.
  • two lead portions 611 and 612 are disposed on the base member 61 to electrically connect electrodes 600 and 601 of the light emitting element 60 .
  • the lead portions 611 and 612 are coated with conductive adhesives 613 and 614 to fix the electrodes 600 and 601 to the lead portions 611 and 612 and provide electrical connection between them.
  • the conductive adhesives 613 and 614 are formed of silver paste, solder paste or solder paste containing lead.
  • the above lead portions and electrodes can also be fixed and electrically connected via gold balls or tin balls by using flip chip technology, or through conductive bonding material by using ultrasonic bonding technology.
  • the lead portions 611 and 612 extend from the electrically connecting positions of the light emitting element 60 and the base member 61 to outer edge of the base member 61 for power connection.
  • the lead portions are formed of electrically conductive conductor such as Au, Ag, Cu, Sn, Al or the like.
  • the light emitting element 60 is attached to the base member 61 in the arrow direction by the conductive adhesives 613 and 614 , thereby forming a structure as shown in FIG. 7 (D). Then, underfill and package processes are performed to fill the recess 610 with sealing member 617 so as to fix the light emitting element 60 to the base member 61 .
  • the final structure of the light emitting device is shown in FIG. 7 (E). It should be noted that although the sealing member in FIG. 7 (E) forms a flat plane at the light output surface, it is not limited thereto.
  • the sealing member can have a lens shape or the like to improve light collecting efficiency.
  • FIG. 7 (E) forms a flat plane at the light output surface
  • a light reflecting portion 615 can be disposed in the recess adjacent to the light output surface to reflect the light beam emitted from the light emitting element 60 to walls of the recess 610 , which further reflect the light to form a substantially collimated light beam to improve the light efficiency.
  • the light reflecting portion 615 is fixed by the sealing member 617 as described above.
  • the light reflecting portion 615 is formed of reflective material by electroplating or assembling.
  • a light converting portion 616 is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element 60 , thereby improving light efficiency.
  • the light converting portion 616 is fixed by the sealing member 617 as described above and formed of fluorescent converting material by coating.
  • the depth of the recess 610 a can be increased to improve light collecting efficiency.
  • the light emitting element 60 a is fixed to the base member 61 a by underfill and package.
  • the thickness of the light emitting device of the present invention becomes much thinner, thereby reducing the fabrication cost.
  • the depth of the recess 610 a can be increased to achieve better light collecting efficiency.
  • the present invention proposes another embodiment, as shown in FIG. 10 .
  • the surface of the light emitting element 60 b opposite to the light output surface is mounted with a thermal conductor 62 such that the heat generated by the light emitting element 60 b can be dissipated efficiently when the light emitting element 60 b is connected to the power.
  • printed circuit board 70 is used to supply power.
  • the thermal conductor 62 of a plate shape is formed of Al, Cu, Fe or material having a thermal conductivity of at least 50 W/mK.
  • an adhesive layer 63 can be disposed between the thermal conductor 62 and the light emitting element 60 b to fix the light emitting element 60 b to the surface of the thermal conductor 62 .
  • the adhesive layer 63 is formed of heat sink paste.
  • FIG. 11 is a plan view of the light emitting device in FIG. 10 .
  • the light emitting element 60 b comprises a single chip emitting single color.
  • the light emitting element 60 b is not limited thereto.
  • the light emitting element 60 b could be composed of multiple chips, which outputs single color by light mixing.
  • light emitting elements 60 c and 60 d respectively include multiple chips which emit light alternately to output multi-color light source for application.
  • the light element could emit ultraviolet.
  • the light emitting device of the present invention at least includes a light emitting element having at least two electrodes located at the side of the light output surface thereof and a base member to which the light emitting element can be mounted.
  • the light emitting element is received in a recess of the base member with its light output surface facing toward the opening of the recess that gradually decreases while approaching the light output surface and the electrodes of the light emitting elements are electrically connected with lead portions of the base member that extend toward the outer edge of the base member for power connection.
  • the present invention achieves a light emitting device of thin thickness, which accordingly has advantages of short current path, low series thermal resistance and low cost.
  • the depth of the recess can be increased to improve light collecting efficiency, which is not limited to the depth of 6 mm as in the prior art.
  • the light emitting element can be mounted into the recess from the back side of the base member, thereby facilitating the mounting process.

Landscapes

  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A light emitting device is proposed, which emits light while connected to the power. The light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection. The light emitting device of the present invention has advantages of short current path, low series thermal resistance and low cost. In addition, the depth of the recess can further be increased to improve light collecting efficiency.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to light emitting devices and, more particularly, to a light emitting device that can be applied to high power light emitting diodes.
  • 2. Description of Related Art
  • Currently, light emitting diodes (LEDs) that are characterized by long lifetime, small volume, low heat dissipation, low power consumption, fast response speed and single color light emission are widely used in indicator lights, bill boards, traffic lights, auto lamps, display panels, communication tools, consumer electronics and so on. Accordingly, different packaging techniques are developed for LEDs packaging, which results in different package structures of LEDs.
  • FIGS. 1(A) to 1(C) show a flip chip packaging process. As shown in FIG. 1(A), a plurality of conductive bumps 11 is formed on an aluminum substrate 10. Then, as shown in FIG. 1(B), an LED chip 12 is attached to the aluminum substrate 10 upside down. Finally, underfill and package processes are performed and a final package structure is shown in FIG. 1(C).
  • FIGS. 2(A) to 2(C) show a wire bonding packaging process. As shown in FIG. 2(A), an aluminum substrate or ceramic substrate 20 is coated with silver paste 21. Then, as shown in FIG. 2(B), a flip chip LED chip device 22 is attached to the substrate and wire bonding process is performed. Subsequently, underfill and package processes are performed and a final package structure is shown in FIG. 2(C).
  • In the above two packaging processes, because the molding compound and the substrate have different expansion factors, deformation and stripping are easy to happen. In addition, since the LED chip is electrically connected to the outside through the aluminum or ceramic substrate, the conductive path is very long, which results in too much heat absorption by the aluminum or ceramic substrate, thereby making the mass production difficult. Furthermore, if several chip products are applied to the aluminum or ceramic substrate, the aluminum or ceramic substrate becomes so weak that it needs to be processed before the reflow process, thereby resulting in high fabrication cost.
  • FIGS. 3(A) to 3(C) and FIGS. 4(A) to 4(C) show two packaging processes which respectively use lead frames 30 and 40 and heat sinks 31 and 41. As shown in FIGS. 3(A) and 4(A), the heat sinks 31 and 41 located on the lead frames 30 and 40 are respectively coated with silver paste 32 and 42. As shown in FIGS. 3(B) and 4(B), flip chip LED chip devices 33 and 43 are respectively attached to the lead frames 30 and 40. Afterwards, a wire bonding process is performed. Subsequently, the underfill and package processes are performed and final package structures are shown in FIGS. 3(C) and 4(C).
  • In the above two packaging processes, high series thermal resistance leads to low reliability. Further, since the stack technique is used in the above two packaging processes, the packaged products become very thick. To facilitate processes that are performed from the front side of the package structure, the depth of the recess must be shallow (as shown in FIGS. 4(A) to 4(C)). However, such a shallow recess will affect light collecting efficiency.
  • FIGS. 5(A) to 5(C) and FIGS. 6(A) to 6(C) show two packaging processes which use ceramic substrates and injection molded lead frames. It should be noted that an aluminum substrate must be further attached to the ceramic substrate. Thus, high cost of the ceramic substrate and addition of the aluminum substrate result in high fabrication cost. In addition, as shown in FIGS. 6(A) to 6(C), injection molding technique results in high series thermal resistance of light emitting device. Accordingly, the light emitting device can not be used in high power LED package. As described above in FIGS. 4(A) to 4(C), there also exists the problem of bad light collecting efficiency.
  • Accordingly, there is a need to develop a low thickness LED package structure which has low series thermal resistance and low packaging and application cost and can improve light collecting efficiency.
  • SUMMARY OF THE INVENTION
  • According to the above defects, a primary objective of the present invention is to provide a thin thickness light emitting device.
  • Another objective of the present invention is to provide a light emitting device which can reduce the series thermal resistance.
  • A further objective of the present invention is to provide a light emitting device which can reduce the fabrication cost.
  • Still another objective of the present invention is to provide a light emitting device which can improve the light collecting efficiency.
  • To achieve the above and other objectives, the present invention discloses a light emitting device, at least comprising: a light emitting element with at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
  • Compared with the prior art, the light emitting device of the present invention achieves a much simpler light emitting device of thin thickness by combining a light emitting element with a base member which is connected to the power through lead portions of the base member, thereby resulting in short current path and low series thermal resistance and low cost. In addition, the depth of the recess can be increased to improve the light collecting efficiency.
  • BRIEF DESCRIPTION OF DRAWINGS
  • FIGS. 1(A) to 1(C) are diagrams illustrating a first light emitting diode package structure according to the prior art;
  • FIGS. 2(A) to 2(C) are diagrams illustrating a second light emitting diode package structure according to the prior art;
  • FIGS. 3(A) to 3(C) are diagrams illustrating a third light emitting diode package structure according to the prior art;
  • FIGS. 4(A) to 4(C) are diagrams illustrating a fourth light emitting diode package structure according to the prior art;
  • FIGS. 5(A) to 5(C) are diagrams illustrating a fifth light emitting diode package structure according to the prior art;
  • FIGS. 6(A) to 6(C) are diagrams illustrating a sixth light emitting diode package structure according to the prior art;
  • FIGS. 7(A) to 7(E) are diagrams illustrating detailed structure of a light emitting device according to the present invention;
  • FIGS. 8(A) to 8(B) are diagrams illustrating structures of a light emitting device according to two other embodiments of the present invention;
  • FIGS. 9(A) to 9(B) are diagrams respectively illustrating structure of a base member having a deeper recess and structure of a light emitting device comprising such a base member according to the present invention;
  • FIG. 10 is a side sectional view of a light emitting device according to another embodiment of the present invention;
  • FIG. 11 is a plan view of the light emitting device of FIG. 10; and
  • FIG. 12 to 14 are plan views illustrating light emitting devices according to other embodiments of the present invention.
  • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • Hereunder, embodiments of the present invention will be described in full detail with reference to the accompanying drawings.
  • FIGS. 7(A) to 7(E) are diagrams showing detailed structure of a light emitting device according to the present invention. The light emitting device of the present invention at least includes a light emitting element 60 (shown in FIG. 7(A)) and a base member 61 (shown in FIG. 7(B)) to which the light emitting element 60 can be mounted.
  • As shown in FIG. 7(A), the light emitting element 60 has at least two electrodes 600 and 601 disposed at the side of the light output surface of the light emitting element 60 for power connection. Preferably, the light emitting element 60 includes at least one light emitting chip 602 and at least one substrate 603 provided with electrodes 600 and 601 for power connection. The light emitting chip 602 in a flip chip configuration is mounted to the substrate 603 and electrically connected with the substrate 603 via gold balls, tin balls or any electrically and thermally conductive material. Preferably, the substrate 603 is formed of Si, Al, or C.
  • As shown in FIG. 7(B), the base member 61 is a lead frame formed of PPA resin, PC thermoplastic material or any insulating material by injection molding or assembly. The base member 61 has a recess 610 in which the light emitting element 60 can be received with its light output surface facing toward opening of the recess 610, the opening of the recess 610 becoming smaller while approaching the light output surface. In addition, two lead portions 611 and 612 are disposed on the base member 61 to electrically connect electrodes 600 and 601 of the light emitting element 60. In the present embodiment, the lead portions 611 and 612 are coated with conductive adhesives 613 and 614 to fix the electrodes 600 and 601 to the lead portions 611 and 612 and provide electrical connection between them. Preferably, the conductive adhesives 613 and 614 are formed of silver paste, solder paste or solder paste containing lead. The above lead portions and electrodes can also be fixed and electrically connected via gold balls or tin balls by using flip chip technology, or through conductive bonding material by using ultrasonic bonding technology. The lead portions 611 and 612 extend from the electrically connecting positions of the light emitting element 60 and the base member 61 to outer edge of the base member 61 for power connection. The lead portions are formed of electrically conductive conductor such as Au, Ag, Cu, Sn, Al or the like.
  • As shown in FIG. 7(C), the light emitting element 60 is attached to the base member 61 in the arrow direction by the conductive adhesives 613 and 614, thereby forming a structure as shown in FIG. 7(D). Then, underfill and package processes are performed to fill the recess 610 with sealing member 617 so as to fix the light emitting element 60 to the base member 61. The final structure of the light emitting device is shown in FIG. 7(E). It should be noted that although the sealing member in FIG. 7(E) forms a flat plane at the light output surface, it is not limited thereto. The sealing member can have a lens shape or the like to improve light collecting efficiency. In addition, as shown in FIG. 8(A), a light reflecting portion 615 can be disposed in the recess adjacent to the light output surface to reflect the light beam emitted from the light emitting element 60 to walls of the recess 610, which further reflect the light to form a substantially collimated light beam to improve the light efficiency. The light reflecting portion 615 is fixed by the sealing member 617 as described above. Preferably, the light reflecting portion 615 is formed of reflective material by electroplating or assembling.
  • As shown in FIG. 8(B), a light converting portion 616 is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element 60, thereby improving light efficiency. The light converting portion 616 is fixed by the sealing member 617 as described above and formed of fluorescent converting material by coating.
  • As shown in FIG. 9(A), since the base member 61 a has a thin thickness, the depth of the recess 610 a can be increased to improve light collecting efficiency. As shown in FIG. 9(B), the light emitting element 60 a is fixed to the base member 61 a by underfill and package. Thus, compared with the prior art, the thickness of the light emitting device of the present invention becomes much thinner, thereby reducing the fabrication cost. On the other hand, even if the light emitting device of the present invention has same thickness as that of the prior art, the depth of the recess 610 a can be increased to achieve better light collecting efficiency.
  • To solve the heat dissipating problem of the light emitting device, the present invention proposes another embodiment, as shown in FIG. 10. The surface of the light emitting element 60 b opposite to the light output surface is mounted with a thermal conductor 62 such that the heat generated by the light emitting element 60 b can be dissipated efficiently when the light emitting element 60 b is connected to the power. In FIG. 10, printed circuit board 70 is used to supply power. Preferably, the thermal conductor 62 of a plate shape is formed of Al, Cu, Fe or material having a thermal conductivity of at least 50 W/mK. Furthermore, an adhesive layer 63 can be disposed between the thermal conductor 62 and the light emitting element 60 b to fix the light emitting element 60 b to the surface of the thermal conductor 62. Preferably, the adhesive layer 63 is formed of heat sink paste. Thus, by separating the thermally conductive structure from the electrically conductive structure, the present invention decreases the conductive path, thereby decreasing series thermal resistance and increasing reliability of products.
  • FIG. 11 is a plan view of the light emitting device in FIG. 10. As shown in FIG. 11, the light emitting element 60 b comprises a single chip emitting single color. However, the light emitting element 60 b is not limited thereto. As shown in FIG. 12, the light emitting element 60 b could be composed of multiple chips, which outputs single color by light mixing. Alternatively, as shown in FIGS. 13 and 14, light emitting elements 60 c and 60 d respectively include multiple chips which emit light alternately to output multi-color light source for application. In addition, the light element could emit ultraviolet.
  • Therefore, the light emitting device of the present invention at least includes a light emitting element having at least two electrodes located at the side of the light output surface thereof and a base member to which the light emitting element can be mounted. Therein, the light emitting element is received in a recess of the base member with its light output surface facing toward the opening of the recess that gradually decreases while approaching the light output surface and the electrodes of the light emitting elements are electrically connected with lead portions of the base member that extend toward the outer edge of the base member for power connection. As a result, the present invention achieves a light emitting device of thin thickness, which accordingly has advantages of short current path, low series thermal resistance and low cost. In addition, the depth of the recess can be increased to improve light collecting efficiency, which is not limited to the depth of 6 mm as in the prior art. Further, compared with the prior art that only can mount the light emitting element from the front side of the base member, since a hollow base member is used in the present invention, the light emitting element can be mounted into the recess from the back side of the base member, thereby facilitating the mounting process.
  • The invention has been described using exemplary preferred embodiments. However, it is to be understood that the scope of the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements. The scope of the claims, therefore, should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

Claims (60)

1. A light emitting device, at least comprising:
a light emitting element having at least two electrodes disposed at a side of a light output surface thereof;
a base member comprising a recess and a plurality of lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward an opening of the recess that converges while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection.
2. The light emitting device of claim 1, wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
3. The light emitting device of claim 1 or 2, wherein the light emitting element is selected from the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
4. The light emitting device of claim 2, wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
5. The light emitting device of claim 2, wherein the light emitting chip is an LED chip.
6. The light emitting device of claim 2, wherein the substrate is selected from the group consisting of Si, Al and C.
7. The light emitting device of claim 1, wherein the base member is a lead frame.
8. The light emitting device of claim 7, wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
9. The light emitting device of claim 7, wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
10. The light emitting device of claim 1, wherein a light reflecting portion is further disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency.
11. The light emitting device of claim 10, wherein the light reflecting portion is formed of reflective material by one of the methods consisting of electroplating and assembling.
12. The light emitting device of claim 1, wherein a light converting portion is further disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element so as to improve light efficiency.
13. The light emitting device of claim 12, wherein the light converting portion is formed of fluorescent converting material by coating.
14. The light emitting device of claim 10, wherein the recess is filled with sealing member to fix the light reflecting portion and the light emitting element to the base member.
15. The light emitting device of claim 12, wherein the recess is filled with sealing member to fix the light converting portion and the light emitting element to the base member.
16. The light emitting device of claim 15, wherein the sealing member further forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
17. The light emitting device of claim 1, wherein the lead portions are formed of electrically conductive conductor.
18. The light emitting device of claim 17, wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
19. The light emitting device of claim 1 or 17, wherein the lead portions are electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
20. The light emitting device of claim 19, wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
21. The light emitting device of claim 1 further includes a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
22. The light emitting device of claim 21, wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
23. The light emitting device of claim 21, wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
24. The light emitting device of claim 23, wherein the adhesive layer is formed of heat sink paste.
25. A light emitting device, comprising:
a light emitting element having at least two electrodes disposed at the side of the light output surface thereof;
a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light reflecting portion is disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency, the recess being filled with sealing member to fix the light reflecting portion and the light emitting element to the base member; and
a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
26. The light emitting device of claim 25, wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
27. The light emitting device of claim 25 or 26, wherein the light emitting element comprises one of the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
28. The light emitting device of claim 26, wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
29. The light emitting device of claim 26 or 8, wherein the light emitting chip is an LED chip.
30. The light emitting device of claim 26, wherein the substrate is made of one of the group consisting of Si, Al and C.
31. The light emitting device of claim 25, wherein the base member is a lead frame.
32. The light emitting device of claim 31, wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
33. The light emitting device of claim 31 or 32, wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
34. The light emitting device of claim 25, wherein the lead portions are formed of electrically conductive conductor.
35. The light emitting device of claim 34, wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
36. The light emitting device of claim 25 or 34, wherein the lead portions are further electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
37. The light emitting device of claim 36, wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
38. The light emitting device of claim 25, wherein the sealing member forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
39. The light emitting device of claim 25, wherein light reflecting portion is formed of reflective material by one of the methods consisting of electroplating and assembling.
40. The light emitting device of claim 25, wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
41. The light emitting device of claim 25, wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
42. The light emitting device of claim 41, wherein the adhesive layer is formed of heat sink paste.
43. A light emitting device, comprising:
a light emitting element with at least two electrodes disposed at the side of the light output surface thereof;
a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light converting portion is disposed in the recess adjacent to the light output surface to change the wavelength of the light emitted from the light emitting element so as to improve light efficiency, the recess being filled with sealing member to fix the light converting portion and the light emitting element to the base member; and
a thermal conductor attached to a surface of the light emitting element opposite to the light output surface for heat dissipation.
44. The light emitting device of claim 43, wherein the light emitting element comprises at least one substrate provided with electrodes for power connection and at least one light emitting chip mounted on the substrate and electrically connected with the substrate.
45. The light emitting device of claim 43, wherein the light emitting element comprises one of the group consisting of single color single chip, single color multi-chip, multi-color multi-chip and chip(s) emitting ultraviolet light.
46. The light emitting device of claim 44, wherein the light emitting chip in a flip-chip configuration is electrically connected with the substrate via one of the group consisting of gold balls, tin balls and electrically and thermally conductive material.
47. The light emitting device of claim 44, wherein the light emitting chip is an LED chip.
48. The light emitting device of claim 44, wherein the substrate is made of one of the group consisting of Si, Al and C.
49. The light emitting device of claim 43, wherein the substrate is a lead frame.
50. The light emitting device of claim 49, wherein the lead frame is formed by one of the methods consisting of injection molding and assembly.
51. The light emitting device of claim 49, wherein the lead frame is mainly formed of one of the group consisting of PPA resin, PC thermoplastic material and insulating material.
52. The light emitting device of claim 43, wherein the lead portions are formed of electrically conductive conductor.
53. The light emitting device of claim 52, wherein the conductor is one of the group consisting of Au, Ag, Cu, Sn, Al and conductive material.
54. The light emitting device of claim 43 or 52, wherein the lead portions are electrically connected with the electrodes of the light emitting element through one of the group consisting of conductive adhesive, gold balls, tin balls and conductive bonding material.
55. The light emitting device of claim 54, wherein the conductive adhesive is one of the group consisting of silver paste, solder paste and solder paste containing lead.
56. The light emitting device of claim 43, wherein the sealing member further forms a lens shape at the light output surface of the light emitting element to improve light collecting efficiency.
57. The light emitting device of claim 43, wherein the light converting portion is formed of fluorescent converting material by coating.
58. The light emitting device of claim 43, wherein the thermal conductor is formed of one of the group consisting of Al, Cu, Fe and material having a thermal conductivity of at least 50 W/mK.
59. The light emitting device of claim 43, wherein an adhesive layer is further disposed between the thermal conductor and the light emitting element.
60. The light emitting device of claim 59, wherein the adhesive layer is formed of heat sink paste.
US11/429,235 2005-09-28 2006-05-08 Light emitting device Abandoned US20070069219A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/487,651 US8017964B2 (en) 2005-09-28 2009-06-19 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094133671 2005-09-28
TW094133671A TWI274430B (en) 2005-09-28 2005-09-28 Light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/487,651 Division US8017964B2 (en) 2005-09-28 2009-06-19 Light emitting device

Publications (1)

Publication Number Publication Date
US20070069219A1 true US20070069219A1 (en) 2007-03-29

Family

ID=37832775

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/429,235 Abandoned US20070069219A1 (en) 2005-09-28 2006-05-08 Light emitting device
US12/487,651 Active US8017964B2 (en) 2005-09-28 2009-06-19 Light emitting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/487,651 Active US8017964B2 (en) 2005-09-28 2009-06-19 Light emitting device

Country Status (5)

Country Link
US (2) US20070069219A1 (en)
JP (1) JP4825095B2 (en)
KR (1) KR100863612B1 (en)
DE (1) DE102006038099A1 (en)
TW (1) TWI274430B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090321778A1 (en) * 2008-06-30 2009-12-31 Advanced Optoelectronic Technology, Inc. Flip-chip light emitting diode and method for fabricating the same
WO2010074371A1 (en) * 2008-12-26 2010-07-01 루미마이크로 주식회사 Chip-on-board led package and manufacturing method thereof
US20100314655A1 (en) * 2009-03-02 2010-12-16 Thompson Joseph B Light Emitting Assemblies and Portions Thereof
US20110175119A1 (en) * 2010-01-15 2011-07-21 Kim Deung Kwan Light emitting apparatus and lighting system
US20120133268A1 (en) * 2010-11-30 2012-05-31 Jon-Fwu Hwu Airtight multi-layer array type led
US8816375B2 (en) 2010-06-10 2014-08-26 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component
CN111584471A (en) * 2020-05-12 2020-08-25 深圳雷曼光电科技股份有限公司 Display screen and method of making the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008154952A1 (en) * 2007-06-18 2008-12-24 Osram Gesellschaft mit beschränkter Haftung Electronic component and method for the production of an electronic component
KR100937136B1 (en) * 2007-12-24 2010-01-18 (주)루미브라이트 Light Emitting Diode Module Using Lead Frame Modulated Multiple Packages
TWI483418B (en) 2009-04-09 2015-05-01 隆達電子股份有限公司 Light emitting diode packaging method
KR101028243B1 (en) * 2010-04-01 2011-04-11 엘지이노텍 주식회사 Light emitting module
KR101037508B1 (en) * 2010-03-25 2011-05-26 안복만 LED mounting circuit board and manufacturing method thereof
TWI414714B (en) 2011-04-15 2013-11-11 Lextar Electronics Corp Light emitting diode cup light
CN102588762A (en) * 2011-01-06 2012-07-18 隆达电子股份有限公司 LED Cup Light
CN102509761A (en) * 2012-01-04 2012-06-20 日月光半导体制造股份有限公司 Chip package
JP7231809B2 (en) * 2018-06-05 2023-03-02 日亜化学工業株式会社 light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060097276A1 (en) * 2004-11-05 2006-05-11 Jeffrey Chen Flip chip type LED lighting device manufacturing method
US7075225B2 (en) * 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7276739B2 (en) * 2004-03-11 2007-10-02 Chen-Lun Hsin Chen Low thermal resistance light emitting diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592169A (en) * 1982-06-29 1984-01-07 Fujitsu Ltd Three-dimensional picture memory setting system
JP2000006467A (en) * 1998-06-24 2000-01-11 Matsushita Electron Corp Image writing device
JP2002134793A (en) * 2000-10-26 2002-05-10 Omron Corp Optical device for optical element
JP2004055168A (en) * 2002-07-16 2004-02-19 Ichikoh Ind Ltd LED lamp module
KR20040020240A (en) * 2002-08-30 2004-03-09 엘지이노텍 주식회사 Light Emitting Diode Lamp and method for fabricating thereof
US7091653B2 (en) * 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
JP2005071798A (en) * 2003-08-25 2005-03-17 Seiko Epson Corp LIGHTING DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075225B2 (en) * 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7276739B2 (en) * 2004-03-11 2007-10-02 Chen-Lun Hsin Chen Low thermal resistance light emitting diode
US20060097276A1 (en) * 2004-11-05 2006-05-11 Jeffrey Chen Flip chip type LED lighting device manufacturing method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090321778A1 (en) * 2008-06-30 2009-12-31 Advanced Optoelectronic Technology, Inc. Flip-chip light emitting diode and method for fabricating the same
WO2010074371A1 (en) * 2008-12-26 2010-07-01 루미마이크로 주식회사 Chip-on-board led package and manufacturing method thereof
KR100989579B1 (en) 2008-12-26 2010-10-25 루미마이크로 주식회사 Chip on board LED package and manufacturing method thereof
US20100314655A1 (en) * 2009-03-02 2010-12-16 Thompson Joseph B Light Emitting Assemblies and Portions Thereof
US8269248B2 (en) * 2009-03-02 2012-09-18 Thompson Joseph B Light emitting assemblies and portions thereof
US20110175119A1 (en) * 2010-01-15 2011-07-21 Kim Deung Kwan Light emitting apparatus and lighting system
US8816375B2 (en) 2010-06-10 2014-08-26 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component
US20120133268A1 (en) * 2010-11-30 2012-05-31 Jon-Fwu Hwu Airtight multi-layer array type led
US8253330B2 (en) * 2010-11-30 2012-08-28 GEM Weltronics TWN Corporation Airtight multi-layer array type LED
CN111584471A (en) * 2020-05-12 2020-08-25 深圳雷曼光电科技股份有限公司 Display screen and method of making the same

Also Published As

Publication number Publication date
KR20070035951A (en) 2007-04-02
TWI274430B (en) 2007-02-21
US8017964B2 (en) 2011-09-13
JP2007096320A (en) 2007-04-12
JP4825095B2 (en) 2011-11-30
DE102006038099A1 (en) 2007-03-29
KR100863612B1 (en) 2008-10-15
TW200713635A (en) 2007-04-01
US20090250717A1 (en) 2009-10-08

Similar Documents

Publication Publication Date Title
US8017964B2 (en) Light emitting device
US7264378B2 (en) Power surface mount light emitting die package
US8188488B2 (en) Power surface mount light emitting die package
CN101432896B (en) Submount for semiconductor light emitting device package and semiconductor light emitting device package including same
US8445928B2 (en) Light-emitting diode light source module
US6940704B2 (en) Semiconductor light emitting device
TWI528508B (en) High-power light-emitting diode ceramic package manufacturing method
TWI305062B (en)
US20050199884A1 (en) High power LED package
US20070064429A1 (en) Light emitting diode arrays with improved light extraction
US20100301372A1 (en) Power surface mount light emitting die package
US20060022216A1 (en) Semiconductor light-emitting device and method of manufacturing the same
JP2005117041A (en) High power light emitting diode device
CN101728466A (en) Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof
US9425373B2 (en) Light emitting module
JP2004207367A (en) Light emitting diode and light emitting diode arrangement plate
US20100084673A1 (en) Light-emitting semiconductor packaging structure without wire bonding
WO2004102685A1 (en) Light emitting device, package structure thereof and manufacturing method thereof
KR100828174B1 (en) Surface-Mount LED Lamps and Manufacturing Method Thereof
KR100665182B1 (en) High output LED package and manufacturing method
KR20130015482A (en) Lighting emitting diode package and method for manufacturing the same
CN100499188C (en) light emitting device
CN101110407A (en) Light emitting diode module
KR101739095B1 (en) Light emitting device

Legal Events

Date Code Title Description
AS Assignment

Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIN, MING-TE;LIN, MING-YAO;KUO, CHIA-CHANG;AND OTHERS;REEL/FRAME:017842/0820

Effective date: 20060323

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION