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US20070056778A1 - Sintered polycrystalline diamond material with extremely fine microstructures - Google Patents

Sintered polycrystalline diamond material with extremely fine microstructures Download PDF

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Publication number
US20070056778A1
US20070056778A1 US11/531,389 US53138906A US2007056778A1 US 20070056778 A1 US20070056778 A1 US 20070056778A1 US 53138906 A US53138906 A US 53138906A US 2007056778 A1 US2007056778 A1 US 2007056778A1
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Prior art keywords
diamond
pcd
sintered
metal
grain size
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US11/531,389
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Steven Webb
Ram Raghavan
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Diamond Innovations Inc
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Individual
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Priority to US11/531,389 priority Critical patent/US20070056778A1/en
Assigned to DIAMOND INNOVATIONS, INC. reassignment DIAMOND INNOVATIONS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RAGHAVAN, RAM, WEBB, STEVEN
Priority to KR1020087009020A priority patent/KR101334048B1/ko
Priority to EP06803564A priority patent/EP1931594A4/fr
Priority to PCT/US2006/035801 priority patent/WO2007035394A2/fr
Priority to JP2008531314A priority patent/JP5289957B2/ja
Publication of US20070056778A1 publication Critical patent/US20070056778A1/en
Priority to US12/406,052 priority patent/US9403137B2/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/002—Tools other than cutting tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C04B2235/427—Diamond
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/722—Nitrogen content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/723—Oxygen content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/782—Grain size distributions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/95—Products characterised by their size, e.g. microceramics
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts

Definitions

  • the disclosed embodiments generally relate to the field of sintered diamond cutting and forming tools and more particularly to such diamond tools having extremely fine microstructures imparting improved tool properties, machinability, and an ability to impart improved surface finish to workpiece materials.
  • PCD Polycrystalline diamond
  • PCD is used extensively in industrial applications including metal cutting wire drawing, drilling, and as wear parts.
  • PCD is a two phase polycrystalline diamond product in which the diamond crystals are sintered together to form a continuous diamond lattice.
  • This lattice, the majority phase, comprises interparticle diamond-to-diamond bonds without interposed, non-diamond, bonding phases.
  • a volume of residual catalyst metal, the minor phase may be disposed in interstices between diamond crystals.
  • PCD production methods were first discovered in the 1960's and are well described in patent literature.
  • HP/HT high pressure/high temperature
  • available PCD components have parts having diamond grain sizes after HP/HT sintering (“as-sintered”) of 1 ⁇ m to 100 ⁇ m. Finer, uniform, as-sintered diamond grain sizes, for example, of about 0.1 ⁇ m to about 1.0 ⁇ m (referred to as “submicron”) have proven challenging to produce commercially using the PCD manufacturing process described above. Submicron diamond particles are difficult to produce, and have proven difficult to handle during blending and mixing due to their high surface area's ability to attract and retain contaminants that affect the sintering process and product properties.
  • Submicron diamond particles have low packing densities that cause problems during loading of shielding enclosures and HP/HT processing.
  • the very fine pores between the submicron diamond grains in the initial diamond particle mass are difficult to uniformly penetrate with catalyst metal, leading to incomplete bonding and sintering between diamond particles.
  • the high surface area of submicron diamond powders causes the diamond solution-reprecipitation process to occur non-uniformly. This leads to non-uniform detrimental diamond grain growth and other complications that make the production of larger parts unfeasible when final diamond grain sizes less than 1 micron are attempted.
  • PCD refers to a sintered PCD body that is comprised of a continuous diamond matrix, diamond to diamond bonds, with or without catalyst metal.
  • PCD is generally a two-phase material (diamond and catalyst), and does not contain any significant amount of a third phase interposed between diamond grains, such as bonding carbides, nitrides, or borides.
  • Non PCD diamond products containing at least some submicron diamond grains are well known.
  • U.S. Pat. No. 4,303,442 to Hara et al. describes a method to sinter diamond materials for a cutting tool or wire die in which the grain size of the diamond is less than 1 ⁇ m. Hara et al.
  • Hara et al. discusses the benefits of submicron grain structure in providing high dimensional precision and superb surface finish on workpieces.
  • Hara et al. it was necessary to add a third bonding phase of one or more carbides, nitrides, and borides of IVB, VB, VIB group metals (otherwise known as International Union of Pure and Applied Chemistry (IUPAC) Group 4, Group 5, and Group 6 elements, respectively) and an iron group catalyst metal to the submicron diamond particles.
  • IUPAC International Union of Pure and Applied Chemistry
  • Hara et al. teaches the difficulty of producing submicron PCD.
  • a polycrystalline (PCD) body has diamond crystals that have an arithmetic mean, as-sintered diamond grain size less than 1 ⁇ m.
  • the PCD body comprises grain sizes greater than about 0.1 ⁇ m and less than about 1.0 ⁇ m.
  • the as-sintered grain size of a PCD body is substantially uniform.
  • the PCD body is monolithic; there are no added bonding phases, such as carbides, nitrides, or borides, in the PCD body.
  • An embodiment of a PCD body may have an oxygen content less than about 0.05 weight percent.
  • the nitrogen content is less than about 0.01 weight-percent.
  • a PCD body embodied herein may have diamond crystals wherein at least 63% of the crystals have a grain size that is less than 1.0 ⁇ m.
  • Another embodiment is a PCD body which has a mean as-sintered grain size between about 0.1 ⁇ m and 1.0 ⁇ m, with a body thickness greater than about 0.5 mm.
  • An embodiment includes a method for producing a polycrystalline diamond (PCD) body an average as-sintered grain size less than about 1.0 ⁇ m by: starting with diamond particles having a mean volumetric particle size less that about 1.0 ⁇ m; blending, with the diamond particles, a catalyst metal having an arithmetic mean particle size that is less than that of the diamond grain size, to form a diamond powder blend; and processing the diamond powder blend using a pressure and a temperature for a time sufficient to affect intercrystalline bonding between adjacent diamond particles.
  • the catalyst metal may be an iron group metal.
  • the catalyst metal may be cobalt.
  • the catalyst metal may be about 0.5% to about 15% by weight of the diamond powder blend.
  • An embodiment uses the catalyst metal as nanocrystals, and a further embodiment has the catalyst metal nanocrystals adhered to the diamond particles.
  • the processing pressure may be between about 20 Kbar and about 70 Kbar.
  • the processing temperature may be at least about 1000° C., and the processing time may be between about 3 minutes to about 120 minutes.
  • the processing further includes inclusion of a cemented metal carbide support with the diamond powder blend.
  • a further embodiment uses a metal cemented carbide support in the shape of an annulus, with the diamond powder blend disposed within the support annulus.
  • Still another embodiment includes a polycrystalline diamond (PCD) wear component, such as, but not limited to, a machining tool, wear pad, punch or die, comprising a PCD body that has a mean as-sintered diamond grain size between about 0.1 ⁇ m and about 1.0 ⁇ m.
  • the PCD body is monolithic.
  • the PCD body is bonded to a substrate, and the substrate may be a cemented metal carbide, such as for example, but not limited to, cemented tungsten carbide.
  • FIG. 1 is a scanning electron microscope (“SEM”) image of an exemplary cobalt-diamond powder blend.
  • FIG. 2 describes a process of making a PCD body with average submicron as-sintered grain size.
  • FIG. 3 is an SEM image of one embodiment using 0.8 ⁇ m diamond powder.
  • FIG. 4 is an SEM image of one embodiment using 0.5 ⁇ m diamond powder.
  • FIG. 5 is an SEM image of a product of the prior art.
  • a body is made of submicron polycrystalline diamond (“PCD”), that is, a liquid metal catalyzed sintered diamond product having a sintered arithmetic mean (i.e., average) diamond grain size below 1 ⁇ m and above 0.1 ⁇ m.
  • PCD submicron polycrystalline diamond
  • Average sintered grain size was determined using the line-intercept method. This method is based on the grain dimension determined through the intersection of randomly drawn lines on a microstructure photo, and is familiar to those skilled in the art.
  • a method embodiment may produce high quality PCD with average as-sintered grain sizes from 0.1 ⁇ m to 1.0 ⁇ m.
  • no bonding agents such as carbides, nitrides or borides are present in the PCD bodies.
  • the PCD bodies described herein comprise substantially only diamond and catalyst.
  • Prior PCD technology as demonstrated in the art, was not capable of producing as-sintered monolithic PCD with grain sizes below 1.0 ⁇ m in substantial amounts.
  • the raw material diamond particles may be natural or HP/HT synthetic (preferably not nanocrystalline “shock” diamond) single crystal particles or polycrystalline aggregates with a submicron particle size, between about 0.1 ⁇ m and about 1.0 ⁇ m.
  • the raw material diamond particle size is the volumetric mean particle size measured by a particle size analyzer such as a Microtrac or any other suitable analyzer.
  • the mean volumetric particle size of the diamond particles was 0.8 ⁇ m.
  • the mean volumetric particle size was 0.5 ⁇ m.
  • particles of 0.3 ⁇ m mean volumetric particle size were effectively sintered.
  • the diamond powder blend further contained one or more pre-blended catalyst metals such as cobalt or other iron group metals.
  • the metal catalyst is pure metal or substantially pure with only minor impurities.
  • the catalyst was in the form of nanocrystalline particles adhered directly to the diamond particles made by any method known now or hereafter to one of ordinary skill in the art.
  • the metal catalyst may an average particle size that is less than that of the diamond grains.
  • FIG. 1 shows a Scanning Electron Micrograph of the powder raw material 100 that may be used in one embodiment.
  • 0.8 ⁇ m mean volumetric size diamond particles 110 have 100 nanometer (nm) average size cobalt particles 120 adhered to their surfaces.
  • Other iron group metals could also be used.
  • catalyst metals of 0.5% to up to 10% by weight were contained in the raw material blend.
  • the catalyst may be present in varying amounts in the blend.
  • the catalyst may make up from about 1% to about 10% of the blend by weight.
  • the catalyst may make up from about 0.5% to about 15% by weight of the blend.
  • the catalyst may make up from about 5% to about 7% percent by weight of the blend.
  • FIGS. 2A and 2B represent a process of making a supported submicron PCD body.
  • FIG. 2A refers to the system before HP/HT processing 200 .
  • FIG. 2B refers to the HP/HT processed supported submicron PCD body 250 .
  • a diamond powder blend 210 diamond particles with metal catalyst, described supra
  • a cemented metal carbide support 220 may be disposed in a protective enclosure 230 .
  • the blended diamond particles 210 and the metal carbide support 220 may be sintered simultaneously in a single HP/HT process.
  • the metal carbide support 220 reacts only with a layer of diamond particles at the interface 240 with the metal carbide support, to adhere the resultant PCD body to the support.
  • the resulting product 250 is a sintered PCD body 260 adhered to a metal carbide support 220 .
  • the PCD body 260 comprises diamond to diamond bonds.
  • the product 250 is subsequently removed from the protective enclosure 230 . It should be understood that the methods described herein can be used to make a monolithic (i.e., unsupported) structure. In such a case, the method shown in FIGS. 2A and 2B could be used, without the support 220 .
  • the HP/HT processing conditions selected are sufficient to provide intercrystalline bonding between adjacent diamond grains and, optionally, the joining of sintered diamond particles to the cemented metal carbide support.
  • the processing conditions generally involve the imposition for about 3 to about 120 minutes of a temperature of at least 1000° C. and a pressure of at least 20 kilobars (kbar).
  • pressures between about 50 and about 70 kbar, and temperatures between about 1400° C. and about 1600° C., may be used. Other temperatures and pressures are possible.
  • Pressures, temperatures, and process duration are selected to minimize diamond grain growth during sintering and may be now or hereafter known to one of skill in the art. Temperatures and pressures described herein are approximate.
  • the diamond and catalyst may be sintered in an HP/HT process without the metal carbide support.
  • a subsequent HP/HT or brazing process may be used to attach a cemented metal carbide support.
  • the metal carbide support may be an annulus and the mass of diamond particles with catalyst (diamond powder blend) may be disposed within the support annulus. These maybe sintered together in the HP/HT process with or without the addition of additional catalyst metal.
  • the disclosure contained herein relates to sintered PCD with improved strength and toughness in machining, for example, non-ferrous metals, ceramics, and wood-based composites.
  • it relates to improved machinability during fabrication of wear components such as PCD machining tools, wear pads, punches, and dies.
  • wear components such as PCD machining tools, wear pads, punches, and dies.
  • wear pads such as PCD machining tools, wear pads, punches, and dies.
  • it relates to the ability of such tools to give an improved surface finish on workpieces, including, for example, aluminum castings or steel wire.
  • Tools as described herein may include, for example, monolithic sintered PCD, a sintered PCD layer bonded to a substrate (such as one of a cemented metal carbide, such as cemented tungsten carbide or other material), and sintered PCD inside an annulus of cemented metal carbide such as cemented tungsten carbide or other material as would be used in wire drawing.
  • a substrate such as one of a cemented metal carbide, such as cemented tungsten carbide or other material
  • sintered PCD inside an annulus of cemented metal carbide such as cemented tungsten carbide or other material as would be used in wire drawing.
  • the average, as-sintered diamond grain size measured by the line intercept method may be less than one micron. It may also be greater than 0.1 ⁇ m. In various embodiments, the average grain size may be less than 0.9 ⁇ m, 0.8 ⁇ m, 0.7 ⁇ m, 0.6 ⁇ m or 0.5 ⁇ m.
  • the PCD body may be substantially uniform, These embodiments, based on symmetrical normal grain size distributions, may contain 50%, 63%, 77%, 90%, 98% and 100% of the diamond grains below 1 ⁇ m. Other embodiments may have other ranges. It may also have a low oxygen content, such as an oxygen content below 0.05%, below 0.01% or between a device detection limit and either of the above numbers.
  • the PCD bodies contained herein may have thicknesses (i.e., top surface to substrate interface) of about 0.5 millimeters (mm) to about 1 mm, up to about 1.5 mm, greater than 1 mm, up to about 2 mm, or another size.
  • bodies having a “uniform” grain size or a “substantially uniform” grain size are intended to encompass bodies where the average grain size is less than 1 micron, meaning that more than 50% of the particles are below 1 ⁇ m after sintering.
  • various amounts of cobalt or other catalyst metal may be used.
  • some or all of the catalyst metal may remain in the finished product.
  • some or all of the catalyst metal may remain in the material, it not present as a bonding agent phase.
  • the metal catalyst does not form chemical bonds with the diamond carbon, and is present only as a residual contaminant.
  • this example demonstrates the ability to make PCD composites in which the sintered diamond is integrally bonded to a cemented metal carbide substrate.
  • a diamond-cobalt powder blend with approximately 7% cobalt by weight, distributed as shown in FIG. 1 with approximately 0.8 ⁇ m volumetric mean raw material diamond size 210 was disposed between a tantalum (Ta) shielding enclosure 230 and a cemented tungsten carbide (WC)+13 weight-percent cobalt disk.
  • This assembly was subjected to HP/HT processing at about 55 Kbar at temperature of about 1400° C. for about 20 minutes to form the sintered submicron PCD tool blank 260 .
  • the PCD tool blank 250 was finished to produce a diamond layer 260 1.5 mm thick, and the overall thickness of the blank 250 was 3.2 mm.
  • the average as-sintered diamond grain size assessed by direct line intercept measurement of the microstructure with a field emission scanning electron microscope, was 0.87 ⁇ m.
  • Table 1 Average as-sintered grain size and body thickness of submicron PCD embodiments described herein.
  • Example 1 The sintered PCD bodies in Example 1 were analyzed using the following techniques: scanning electron microscope (SEM), Oxygen and Nitrogen determination. As a comparison, PCD bodies made with prior technology and commercially available materials were also analyzed. Table 2 highlights a few of the differences seen. TABLE 2 Comparison of samples with and without cobalt blending. Analytical Technique New PCD Material Prior Art LECO-Nitrogen 0.009% 0.0165% LECO-Oxygen 0.046% 0.087%
  • Table 2 shows that the PCD materials of the embodiments herein have low nitrogen and oxygen concentrations, as compared with Prior Art PCD materials.
  • Embodiments described herein may have nitrogen contents below about 0.01% (w/w), Embodiments described herein may have oxygen contents below about 0.05% (w/w).
  • FIG. 3 shows the submicron grain size of a PCD body embodiment described herein prepared using diamond powder with a volumetric mean size of 0.8 ⁇ m.
  • FIG. 4 shows the submicron grain size of a PCD body embodiment described herein prepared using diamond powder with a volumetric mean size of 0.5 ⁇ m.
  • FIG. 5 shows the grain size of a Sumitomo Grade DA2200 PCD body, which is a commercially available product.
  • Table 3 shows measurements of the sintered diamond microstructure of the same three materials as FIGS. 5-7 , using the line-intercept method. This method is based on the grain dimension determined through the intersection of randomly drawn lines on a microstructure photo. TABLE 3 Comparison of measured grain sizes using line-intercept method. (sizes in microns) Standard Average grain Deviation Product size ( ⁇ m) ( ⁇ m) 0.8 ⁇ m Starting 0.87 0.41 Powder 0.5 ⁇ m Starting 0.88 0.24 Powder Sumitomo 1.46 0.79 DA2200
  • this example illustrates the ability to make carbide supported wire die blanks 800 .
  • These are materials in which the diamond portion 810 is sintered into a carbide annulus 820 using a separate metal source as the catalyst rather than sintering using the cobalt binder phase from the carbide substrate.
  • diamond powder 810 with a volumetric mean particle size of 0.5 ⁇ m further containing 7% by weight of the fine, dispersed cobalt similar to Example 1 was used.
  • the diamond and cobalt powder blend 810 were loaded into the center of a carbide cylinder 820 encased in a tantalum (Ta) enclosure 830 .
  • a cobalt (Co) disc 840 (shown in exploded view) was placed on top of the powder followed by a Ta shielding enclosure 850 (also in exploded view), Several of these assemblies were loaded into a HP/HT reaction cell and subjected to pressures of about 55 Kbar at temperatures between about 1300° C. and about 1500° C. for about 15 minutes to form the sintered PCD wire die.
  • the PCD wire dies are recovered from the reaction cell and finished such that the entire PCD sintered volume was about 7 mm in diameter and 6 mm thick.
  • the overall diameter of the wire die including the carbide annulus surrounding the diamond was about 14 mm

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WO2007035394A2 (fr) 2007-03-29
EP1931594A4 (fr) 2013-01-02
JP5289957B2 (ja) 2013-09-11
EP1931594A2 (fr) 2008-06-18
KR101334048B1 (ko) 2013-11-29
JP2009508798A (ja) 2009-03-05
WO2007035394A3 (fr) 2007-06-07
KR20080059569A (ko) 2008-06-30

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