US20050170199A1

US20050170199A1 - Aluminum silicophosphate glasses

Info

Publication number: US20050170199A1
Application number: US11/026,364
Authority: US
Inventors: Bruce Aitken; George Beall; Linda Pinckney
Original assignee: Corning Inc
Current assignee: Corning Inc
Priority date: 2003-12-31
Filing date: 2004-12-30
Publication date: 2005-08-04
Also published as: CN1902139B; TW200533624A; TWI298316B; JP4977474B2; KR101043181B1; EP1730084B1; US7189672B2; KR20060129347A; CN1902139A; WO2005066087A3; EP1730084A2; JP2007516933A; WO2005066087A2

Abstract

A substrate for flat panel display glasses comprising a glass the P₂O₅—SiO₂—Al₂O₃ternary system which yields stable glasses exhibiting high strain point temperatures, resistance to devitrification, good chemical durability, excellent dielectric properties, coefficients of thermal expansion that can be tailored to match that of silicon, and having liquidus viscosities that enable forming by conventional methods. The glass comprises the following composition as calculated in weight percent on an oxide basis: P₂O₅33-75%, SiO₂2-52%, Al₂O₃8-35%.

Description

RELATED APPLICATION

This application claims the benefit of priority from Provisional U.S. Patent Application No. 60/533,784, filed, Dec. 31, 2003, the content of which is incorporated herein by reference.

FIELD OF THE INVENTION

The invention relates to Al₂O₃—P₂O₅—SiO₂glasses that are characterized by a high strain point, a coefficient of thermal expansion that can be matched to silicon, and exhibiting high viscosities at their liquidus temperatures, rendering them especially suitable for use as substrates in flat panel display devices.

BACKGROUND OF THE INVENTION

Liquid crystal displays (LCDs) are passive displays which depend upon external sources of light for illumination. Most commonly, LCDs are manufactured in an active matrix addressed format in which an array of diodes, metal-insulator-metal (MIM) devices, or thin film transistors (TFTs) supplies an electronic switch to each pixel. Two sheets of glass form the structure of the display. The separation of the sheets is the critical gap dimension of 5-10 um that contains the liquid crystal material. In order to maintain uniformity of the gap dimension, extremely precise flatness of the glass sheet is required.
Active matrix liquid crystal displays (AMLCDs) employ an active device such as a diode or thin film transistor at each pixel thereby enabling high contrast and high response speed. Although many display devices currently utilize amorphous silicon (a-Si), the processing of which may be accomplished at temperatures under 450° C., polycrystalline-silicon (poly-Si) processing is preferred. Poly-Si has a much higher drive current and electron mobility thereby increasing the response time of the pixels. Further, it is possible, using poly-Si processing, to build the display drive circuitry directly on the glass substrate. By contrast, a-Si requires discrete driver chips that must be attached to the display periphery utilizing integrated circuit packaging techniques. Poly-Si processing methods operate at higher temperatures than those employed with a-Si TFTs. Such processes enable formation of poly-Si films having extremely high electron mobility (for rapid switching) and excellent TFT uniformity across large areas. The actual temperature required is mandated by the particular process utilized in fabricating the TFTs. Those TFTs with deposited gate dielectrics require 600-650° C., while those with thermal oxides require about 800° C. Both a-Si and poly-Si processes demand precise alignment of successive photolithographic patterns, thereby necessitating that the thermal shrinkage of the substrate be kept low.
The temperature requirements have mandated the use of glasses exhibiting high strain points in order to avoid thermal deformation at temperatures above 600° C.
It is generally accepted that four properties are deemed mandatory for a glass to exhibit in order to fully satisfy the needs of a substrate for LCDs:

- First, the glass must be essentially free of intentionally added alkali metal oxide to avoid the possibility that alkali metal from the substrate can migrate into the transistor matrix;
- Second, the glass substrate must be sufficiently chemically durable to withstand the reagents used in the TFT deposition process;
- Third, the expansion mismatch between the glass and the silicon present in the TFT array must be maintained at a relatively low level even as processing temperatures for the substrates increase; and,
- Fourth, the glass must be capable of being produced in high quality thin sheet form at low cost; that is, it must not require extensive grinding and polishing to secure the necessary surface finish.

The last requirement is a particularly difficult one to achieve inasmuch as it demands a sheet glass production process capable of producing essentially finished glass sheet, such as the overflow downdraw sheet manufacturing process described in U.S. Pat. No. 3,682,609. That process requires a glass exhibiting a very high viscosity at the liquidus temperature plus long term stability, e.g. periods of 30 days, against devitrification at melting and forming temperatures.
Most glasses to date that fulfill the requirements set forth above are based on eutectic compositions in the alkaline earth boroaluminosilicate systems. The present invention explores a compositional area whose benefits for use as a substrate for display devices will be made evident.

SUMMARY OF THE INVENTION

The present invention describes a glass-forming area in the P₂O₅—SiO₂—Al₂O₃system which yields stable glasses with high use temperatures, resistance to devitrification, good chemical durability, excellent dielectric properties, coefficients of thermal expansion that can be tailored to match that of silicon, and having liquidus viscosities that enable forming by conventional methods. The glass comprises the following composition as calculated in weight percent on an oxide basis: P₂O₅33-75%, SiO₂2-52%, Al₂O₃8-35%, with the stipulation that the P/Al atomic ratio should lie between 1.3 and 4.0.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 describes interpolated liquidus phase relations (dark solid lines) in the SiO₂—Al₂O₃—P₂O₅system from binary data along the SiO₂—P₂O₅, SiO₂—Al₂O₃—Al₂O₃—P₂O₅and AlPO₄—SiO₂joins as given in Phase Diagrams for Ceramists (American Ceramic Society). Cation per cent is used because Si₂O₄and AlPO₄are isostructural. The glass-forming area we claim is outlined in a polygon; the dots indicate good glasses.
FIG. 2 shows absorbance curves of Cr—, V—, Fe—, and Mn-doped glasses (base composition=YVF from Table 1).
FIG. 3 is a plot of viscosity over a range of temperatures for an exemplary composition.
FIG. 4 is a plot demonstrating strain points and annealing points for glasses over a range of SiO₂concentrations.
FIG. 5 is a dielectric constant curve plotting dielectric constant v. temperature for a representative glass composition.
FIG. 6 is a plot of viscosity over a range of temperatures comparing an exemplary composition of the present invention and a commercially available glass made utilizing a downdraw process.

DETAILED DESCRIPTION OF THE INVENTION

Very few ternary glass-forming systems have not already been thoroughly evaluated. Moreover, few compositional systems that contain no alkali or alkaline earth cations are known to provide stable, non-devitrifying glasses of excellent quality.
A novel glass-forming area has been discovered in the basic system P₂O₅—SiO₂—Al₂O₃. While attempting to synthesize the crystalline compound Si₂AlO(PO₄)₃through melting, an excellent glass was formed, to the surprise of the inventors. The glass-forming area was expanded along the join Al(PO₃)₃—SiO₂and on the Al₂O₃-rich (peraluminous) side of this join by further melt exploration (see FIG. 1). Glasses poorer in Al₂O₃from this join (subaluminous) were deemed problematic from the standpoint of chemical durability.
An important feature of these glasses is their thermal stability, specifically their resistance to phase separation, devitrification, and deformation at temperatures of 800° C. or even 900° C. The coefficient of thermal expansion ranges from roughly 25 to 55×10-7/° C. and can be tailored to match that of silicon. No alkali or alkaline earth cations are present in these glasses, allowing excellent dielectric behavior. In addition, low liquidus values are expected along cotectic boundaries between SiO₂, AlPO₄, and Al(PO₃)₃phases in the preferred composition areas. The peraluminous glasses described herein have shown excellent resistance to boiling water.
These properties were recognized as being potentially and particularly important for relatively refractory, low-density substrates for silicon or other substrates where the absence of alkali and related glass modifiers is demanded (such as low dielectric substrates). There is a need for readily-meltable glasses which resist deformation and devitrification at high temperatures, have no mobile cations, and possess a useful range of thermal expansion coefficients.
The advantages of these glasses involve their superior deformation resistance over conventional glasses. They can be heated to 800° C. or even 900° C. without noticeable deformation. Annealing points of many compositions exceed 750° C. Expansion of the glasses range from 25 to 55×10-7/° C. and can be tailored to match that of silicon. The glasses contain no alkali or alkaline earth metals and can be made from relatively inexpensive batch materials. Many of these glasses possess low liquidus temperatures and are compatible with a wide range of forming processes.
The ternary glass composition area-defined herein in weight % is as follows:

- SiO₂2-52
- Al₂O₃8-35
- P₂O₅33-75, where 1.3<P/Al<4.0.

It has also been found that boric oxide, B₂O₃, additions are effective in stiffening glasses that otherwise might deform above 800° C. In addition, B₂O₃is expected to lower the liquidus temperature and further stabilize the glasses against devitrification. The level of B₂O₃added to the ternary compositions is typically up to 10% by weight. With this component added, the broader quaternary glass compositions are as follows:

- SiO₂2-52
- Al₂O₃8-35
- P₂O₅30-75
- B₂O₃0-10, where 1.3<P/Al<4.0.

It is believed that B₂O₃additions help to immobilize P₂O₅in the glass structure as BPO₄units, thereby increasing stiffness and improving chemical durability. Other oxides such as ZrO₂can be added in amounts up to 6% where appropriate. These glasses can also be doped with transition element or rare earth cations to yield potentially useful optical properties.
As noted, glasses in the composition region have excellent dielectric properties with dielectric constants as low as 4.5 (and usually flat with respect to temperature and KHz) and resistivities at 250° C. of 10¹⁴-10^16.5. The dielectric constant curves for a representative glass (908 ZCP) are shown in FIG. 5.
The glasses of the present invention were melted in platinum crucibles at temperatures of 1600-1650° C. (although lower temperatures could be used for many of these glasses), cast into patties, and annealed at 750° C. Typical P₂O₅loss is about 1%. Descriptions of the glasses as melted and as subsequently heat-treated are described in Table 1. Physical properties obtained to date are also listed in the table.
FIG. 2 shows the absorbance curves for a typical aluminosilicophosphate glass (908 YVF in Table 1) doped with various ions. The glass appears to provide a mildly reducing environment, with the iron occurring predominantly as Fe²⁺ and chromium as Cr³⁺ (and no Cr⁶⁺, as evidenced by the UV edge.) The 650 nm absorption of Cr³⁺ also is red-shifted, suggesting a weaker crystal field than obtained in conventional soda lime or aluminosilicate glasses.
FIG. 3 shows a viscosity curve for exemplary composition 908ZCA. As one of skill in the art can appreciate, the composition has a very high viscosity at the liquidus, in excess of 1,000,000 poises. This makes it an excellent candidate for downdraw manufacturing processes (e.g. the fusion or slot draw process). The preferred manufacturing process for the glasses of the present invention is via a downdraw sheet manufacturing process (e.g. the fusion or slot draw process) in which glass sheets are formed while traveling in a downward direction. In the fusion or overflow downdraw forming process, molten glass flows into a trough, then overflows and runs down both sides of a pipe, fusing together at what is called the root, (when the pipe ends and the two overflow portions of glass rejoin) and is drawn downward until cool. The overflow downdraw sheet manufacturing process is described for example in U.S. Pat. No. 3,338,696 and U.S. Pat. No. 3,682,609.

FIG. 6 shows a viscosity curve for another exemplary composition (908 ZAU). The viscosity at the liquidus for this composition is greater than 10,000,000 poise. These low liquidus glasses can be melted as low as 1400-1450° C., significantly minimizing phosphorous volatility during melting. For comparative purposes, a viscosity curve for a commercially produced glass, manufactured by the fusion process, (Corning Incorporated Code 1737) is included in FIG. 6.

TABLE 1


Glass Compositions and Properties

wt % (batched)
908	ZCA	YVF	YVY	YWQ	YWW	YXA	ZAU	ZCD	ZCK

SiO₂	21.4	31.3	30.1	38.8	47.5	39.8	27.4	41.5	39.8
Al₂O₃	13.1	13.3	12.8	16.9	10.7	17.3	13.1	16.4	30.4
P₂O₅	54.7	55.4	53.3	44.3	39.3	40.3	54.7	12.1	49.9
B₂O₃	4.8	0	0	0	2.5	2.6	4.8	0	0
ZrO ₂	0	0	3.8	0	0	0	0	0	0
Glass appearance		clear	clear	Clear	clear	clear, seedy	clear	clear	clear
Heat treatments

900° C.-4 h		some slump		some haze	some haze		clear	some haze	sl haze
				no slump	no slump		sl. slump		sl slump
850° C.-4 h		clear					clear	clear	clear
Liquidus T ° C.	875	1110			>1250
Refractive index		1.499							1.485
Density g/cm³	2.486	2.485					2.486		2.374
CTE 25-500° C.	48	47		32			53		37
(×10⁻⁷/° C.)
Anneal point (° C.)	729	728		713
Strain point (° C.)	681	677		660
2 h boiling water	good	good		good			good		irid.

wt % (batched)
908	ZCP	ZCS	ZCX	ZDA	ZEY	ZFA	ZFC	ZFV	ZFW

SiO₂	39.5	31.2	25.8	24.4	16.9	19.7	16.1	12.4	13.3
Al₂O₃	15.6	19.5	21.1	17.6	20.8	18.3	19.8	22.4	24.1
P₂O₅	40.1	44.5	53.1	53.2	62.3	57.2	59.3	58.2	62.6
B₂O₃	4.8	4.8	0	4.8	0	4.8	4.8	7	0
Glass	Clear	clear	clear	clear	clear	clear	clear
appearance
Heat treatments

900° C.-4 h	Clear	clear	some haze	Clear	clear	clear	clear
	no slump	no slump	slump	sl. slump	slump	some slump	some slump
850° C.-4 h			clear.	Clear
			no slump	sl slump
Liquidus T ° C.
Refractive index			1.491
Density g/cm³	2.313			2.413
CTE 25-500° C.
(×10⁻⁷/° C.)
Anneal point
(° C.)
Strain point (° C.)
2 h boiling water	rough surf				very	rough surf	excellent
					good

An additional series of melting experiments were conducted at 1600-1650° C. for 4 hours on 500-1000 gm batches of the appropriate mixtures of SiO₂, Al(PO₃)₃and Al₂O₃contained within Pt crucibles. For compositions on the Al(PO₃)₃—SiO₂join, it was observed that clear glasses can be formed with SiO₂contents ranging from 7 to nearly 30 weight %. In addition, clear glasses be formed over a similar range of SiO₂concentrations, but with higher content up to about 35% and, thus, expected superior chemical durability. Physical property data including anneal point (T_a), strain point (T_str) and thermal expansion coefficient (CTE) for these glasses is provided in the following Table 2:

TABLE 2


						CTE
				T_a	T_str	25-500° C.
Code	% Al₂O₃	% P₂O₅	% SiO₂	(° C.)	(° C.)	(×10⁻⁷/° C.)

891 HHM	17.9	74.7	7.4	757	709	59
891 HHN	17.4	72.4	10.2	756	714	55
891 HHO	16.8	70	13.2	755	707	56
891 HHP	16.2	67.5	16.3	758	718	56
891 HHQ	15.5	64.8	19.7	743	694	56
891 HHR	14.8	61.9	23.3	741	697	55
891 HHS	14.1	58.8	27.1	731	683	59
891 HLX	18.6	64.9	16.5	725	679	55
891 HLY	21.2	62.2	16.6	701	656	51
891 HLZ	23.7	59.5	16.8	680	631	46
891 HMA	20.4	66.2	13.4	721	678	51
891 HMC	25.4	61	13.6	—	—	—
891 HOQ	26	66.3	7.7	—	—	—
891 HOT	25.1	70	4.9	—	—	—
891 HOW	26.6	71	2.4	—	—	—

The data given above and displayed in FIG. 4 indicate that the highest strain points are achieved for glasses with (1) Al₂O₃/P₂O₅ratios of ⅓ (i.e. lying on the on the Al(PO₃)₃—SiO₂join and (2) SiO₂contents of 7-18%, with glass 891 HHP being a preferred composition. The trend towards lower strain points at SiO₂levels greater than 18% may be a reflection of the existence of a binary eutectic involving SiO₂and Al(PO₃)₃at some higher SiO₂concentration. Similarly, the downward trend in strain point with increasing Al₂O₃content at constant SiO₂levels may be due to the existence of a thermal valley between the liquidus surfaces of Al(PO₃)₃and AlPO₄.
As noted, any number of fluxes (modifying oxides) may be added to the batch in order to impart these and other desired characteristics. While these fluxes typically lower the strain point of the native glass, they are often necessary for any or all of the following purposes: raise the CTE, lower the liquidus temperature, obtain a preferred strain point for compaction, absorption at specific wavelengths, ease the melting, modify density or modify durability. The effects that certain oxides have on the physical and chemical characteristics of glass are generally known. Fluxes may be added in amounts up to 15%, or as limited by solubility. Fluxes are preferably added in amounts less than 10% in total. The glass compositions therefore are identified as:

- SiO₂2-52
- Al₂O₃8-35
- P₂O₅30-75
- RO 0-15

Modifying oxides may be selected from alkali metals, alkaline earth metals, transition metals as well as oxides of the lanthanide series. Specific examples include Y₂O₃, ZrO₂, HfO₂, MgO, CaO, SrO, BaO, As₂O_3,SnO₂, Li₂O La₂O₃GeO₂, Ga₂O₃, Sb₂O₃, Na₂O, K₂O, Rb₂O, Cs₂O, BeO, Sc₂O₃, TiO₂, Nb₂O₅, Ta₂O₅, ZnO, CdO, PbO, Bi₂O₃, Gd₂O₃, Lu₂O₃and/or B₂O_3.As demonstrated, several examples of representative glasses were melted containing various fluxes. Therefore, for purposes of this invention, R shall be Mg, Ca, Y, Sr, Zr, Hf, As, Sn, Li, La, Ge, Ga, Sb, Ba, Sb, Ti, Ta, Zn, or any other element that fits the definition of the appropriate modifiers above.

TABLE 3


wt %	ZHR	ZIR	ZIT	ZIU	ZIV	ZIW	ZIX	ZIY	ZKH	ZJB

SiO₂	23.2	22.3	22.8	22.0	22.9	22.4	22.6	22.1	21.3	25.9
Al₂O₃	15.1	14.5	14.9	14.4	14.9	14.6	14.7	14.4	13.9	12.4
P₂O₅	56.9	54.6	55.8	53.9	56.1	54.9	55.3	54.1	52.2	51.6
B₂O₃	4.8	4.6	4.7	4.5	4.7	4.6	4.6	4.5	4.4	4.5
ZrO₂		4.0							3.8
CaO			1.9
La₂O₃				5.2
MgO					1.3
SrO						3.4
ZnO							2.7			4.8
SnO₂								4.9
Y₂O₃									8.7
Sb₂O₅										0.9
Liq T ° C.	990							˜1240
Density	2.470
CTE	51	47					50	51
Anneal	736	738					705	724	727
Strain	686	685					654	675	670

As can readily be appreciated by the disclosed experimental data, the disclosed glass compositions present excellent candidates for display applications. They have strain points that are slightly higher than the alkaline earth boroaluminosilicate glasses presently in commercial use. They also provide the benefit of having lower viscosities at 1600° C., allowing them to be self-fining. It is believed that the partial volatization of the P₂O₅(in amounts approximating 1%) aid in refining of the glass. As a consequence, arsenic or other common fining agents will likely not be required during the manufacturing process.

Claims

1. A substrate for a flat panel display device comprising the following composition when calculated in weight percent and calculated from the batch on an oxide basis: P₂O₅30-75, SiO₂2-52, Al₂O₃8-35.

2. The substrate of claim 1 wherein said substrate composition has a P/Al atomic ratio of between 1.3 and 4.0.

3. The substrate of claim 1 having a linear coefficient of thermal expansion of 25-55×10⁻⁷/° C. over a temperature range of 25 to 500° C.

4. The substrate of claim 1 having a strain point greater than 600° C.

5. The substrate of claim 1 having a strain point of at least 650° C.

6. The substrate of claim 1 having a strain point of at least 700° C.

7. An aluminum silicophosphate glass exhibiting a density less than about 2.5 g/cm³a strain point greater than approximately 650° C., the glass comprising the following composition as calculated in a weight percent on an oxide basis: 2-52 SiO_2,8-35 Al₂O_3,and 30-75 P₂O_5.

8. The glass composition of claim 7 further comprising at least one modifying oxide as calculated in weight percent on an oxide basis of less than 15%

9. The glass composition of claim 8 wherein the modifying oxide is selected from the group consisting of CaO, La₂O₃, MgO, SrO, Sb₂O5, BaO, Y₂O₃, ZrO₂, and B₂O₃in a total amount not exceeding 10 weight %.

10. The glass of claim 7 further exhibiting a coefficient of thermal expansion of 25-55×10⁻⁷/° C. over a temperature range of 25 to 500° C.

11. A glass substrate for an electronic display device comprising the following composition when calculated in weight percent and calculated from the batch on an oxide basis: P₂O₅30-75, SiO₂2-52, Al₂O₃8-35.