US20040262163A1 - Molten salt bath for electroforming and method of manufacturing metal product using the same - Google Patents
Molten salt bath for electroforming and method of manufacturing metal product using the same Download PDFInfo
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- US20040262163A1 US20040262163A1 US10/776,264 US77626404A US2004262163A1 US 20040262163 A1 US20040262163 A1 US 20040262163A1 US 77626404 A US77626404 A US 77626404A US 2004262163 A1 US2004262163 A1 US 2004262163A1
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- United States
- Prior art keywords
- electroforming
- molten salt
- salt bath
- csbr
- libr
- Prior art date
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Links
- 238000005323 electroforming Methods 0.000 title claims abstract description 149
- 150000003839 salts Chemical class 0.000 title claims abstract description 89
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 61
- 239000002184 metal Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 claims abstract description 81
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 150000004820 halides Chemical class 0.000 claims abstract description 28
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 16
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 16
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 12
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 230000001376 precipitating effect Effects 0.000 claims abstract description 5
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 239000011651 chromium Substances 0.000 description 17
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 13
- 150000001768 cations Chemical class 0.000 description 12
- 238000001556 precipitation Methods 0.000 description 11
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 10
- 150000001450 anions Chemical class 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 6
- 239000001103 potassium chloride Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 6
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Chemical compound [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 6
- 235000011164 potassium chloride Nutrition 0.000 description 5
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 5
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 5
- 229910013618 LiCl—KCl Inorganic materials 0.000 description 4
- 229910001626 barium chloride Inorganic materials 0.000 description 4
- 229910001632 barium fluoride Inorganic materials 0.000 description 4
- 229910001640 calcium iodide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 4
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 229910001631 strontium chloride Inorganic materials 0.000 description 4
- 229910001637 strontium fluoride Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 3
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 3
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 3
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 2
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910001620 barium bromide Inorganic materials 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001638 barium iodide Inorganic materials 0.000 description 2
- 229910001622 calcium bromide Inorganic materials 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- UDJQAOMQLIIJIE-UHFFFAOYSA-L dichlorotungsten Chemical compound Cl[W]Cl UDJQAOMQLIIJIE-UHFFFAOYSA-L 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910001623 magnesium bromide Inorganic materials 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910001641 magnesium iodide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229940102127 rubidium chloride Drugs 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 229910001625 strontium bromide Inorganic materials 0.000 description 2
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 2
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 2
- 229910001643 strontium iodide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019620 CsBr—CsCl Inorganic materials 0.000 description 1
- 229910019618 CsBr—CsF Inorganic materials 0.000 description 1
- 229910019615 CsBr—CsI Inorganic materials 0.000 description 1
- 229910019627 CsBr—KBr Inorganic materials 0.000 description 1
- 229910019673 CsBr—NaBr Inorganic materials 0.000 description 1
- 229910019671 CsBr—RbBr Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910020249 KBr—KCl Inorganic materials 0.000 description 1
- 229910020309 KBr—KF Inorganic materials 0.000 description 1
- 229910020296 KBr—KI Inorganic materials 0.000 description 1
- 229910020316 KBr—NaBr Inorganic materials 0.000 description 1
- 229910020318 KBr—RbBr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 1
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229940046413 calcium iodide Drugs 0.000 description 1
- XZQOHYZUWTWZBL-UHFFFAOYSA-L chromium(ii) bromide Chemical compound [Cr+2].[Br-].[Br-] XZQOHYZUWTWZBL-UHFFFAOYSA-L 0.000 description 1
- XBWRJSSJWDOUSJ-UHFFFAOYSA-L chromium(ii) chloride Chemical compound Cl[Cr]Cl XBWRJSSJWDOUSJ-UHFFFAOYSA-L 0.000 description 1
- RNFYGEKNFJULJY-UHFFFAOYSA-L chromium(ii) fluoride Chemical compound [F-].[F-].[Cr+2] RNFYGEKNFJULJY-UHFFFAOYSA-L 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 description 1
- YXPHMGGSLJFAPL-UHFFFAOYSA-J tetrabromotungsten Chemical compound Br[W](Br)(Br)Br YXPHMGGSLJFAPL-UHFFFAOYSA-J 0.000 description 1
- ZWYDDDAMNQQZHD-UHFFFAOYSA-L titanium(ii) chloride Chemical compound [Cl-].[Cl-].[Ti+2] ZWYDDDAMNQQZHD-UHFFFAOYSA-L 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
Definitions
- the present invention relates to a molten salt bath for electroforming and a method of manufacturing a metal product using the same, and more particularly to a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same.
- LiCl—KCl-based eutectic mixture obtained by mixing lithium chloride (LiCl) and potassium chloride (KCl) has generally been used as a molten salt bath for electroforming.
- tungsten chloride (WCl 2 ) with respect to the total mass of the molten salt bath for electroforming is added to the molten salt bath for electroforming prepared by mixing 45 mass % of LiCl and 55 mass % of KCl with respect to the total mass of the molten salt bath for electroforming. Then, a pair of electrodes consisting of an anode and a cathode is immersed into the molten salt bath for electroforming, and thereafter, a current of several A/dm 2 is fed between these electrodes in a heated state around 500° C. under an Argon (Ar) atmosphere. In this manner, tungsten (W) is precipitated on the surface of the cathode, thereby forming a metal product with a prescribed shape.
- tungsten chloride (WCl 2 ) with respect to the total mass of the molten salt bath for electroforming is added to the molten salt bath for electroforming prepared by mixing 45 mass % of LiCl and 55 mass % of KCl with respect to the
- the LiCl—KCl-based molten salt bath for electroforming has a high melting point around 352° C., and accordingly, electroforming had to be performed at a temperature higher than that, for example, at approximately 500° C. as described above. If an electroforming mold having a resist pattern formed on the surface of a conductive substrate made of stainless or the like is used as the cathode, the resist consisting essentially of acrylic or the like is pyrolyzed, and the metal product in a prescribed shape cannot be obtained.
- an electroforming mold obtained by silicon (Si) trench etching or an electroforming mold obtained by glass transfer may be employed as the cathode.
- FIGS. 4A to 4 D A method of manufacturing an electroforming mold using Si trench etching will now be described with reference to FIGS. 4A to 4 D. It is noted that the same reference characters refer to the same or corresponding components in the figures.
- a nickel (Ni) film 11 is formed on an Si substrate 10 by sputtering. Then, Ni is further precipitated on Ni film 11 by electroplating, so as to increase a thickness of Ni film 11 , as shown in FIG. 4B. Thereafter, as shown in FIG. 4C, Si substrate 10 is subjected to trench etching, so as to pattern Si substrate 10 in a prescribed shape. Finally, as shown in FIG. 4D, a metal film 12 is vapor-deposited on the surface of exposed Ni film 11 and Si substrate 10 . Thus, the electroforming mold is manufactured by using Si trench etching.
- FIG. 5A a resist 19 is patterned on the surface of conductive substrate 1 made of stainless or the like by SR lithography using synchtron radiation (SR) light.
- SR synchtron radiation
- FIG. 5B Ni film 11 is formed on conductive substrate 1 in a prescribed shape by electroforming.
- FIG. 5C resist 19 is removed, and Ni film. 11 is separated from conductive substrate 1 .
- the shape of Ni film 11 is transferred onto a glass 14 as shown in FIG. 5D, and thereafter, metal film 12 is vapor-deposited on the surface of glass 14 . In this manner, the electroforming mold is manufactured by using glass transfer.
- an object of the present invention is to provide a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same.
- a molten salt bath for electroforming containing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal is provided.
- a substance contained in the molten salt bath for electroforming according to the present invention is at least partially ionized in the molten salt bath for electroforming.
- the halide of the alkali metal is potassium bromide.
- the sum of a mole fraction of lithium bromide and a mole fraction of cesium bromide is set to be within a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming.
- a mole ratio of lithium bromide to cesium bromide is set to be within a range from at least 1.8 to at most 2.5.
- the molten salt bath for electroforming according to the present invention has a eutectic composition.
- a method of manufacturing a metal product including the steps of: forming a resist pattern on a conductive substrate and exposing a portion of the conductive substrate; immersing the conductive substrate having the resist pattern formed into the molten salt bath for electroforming described above, the molten salt bath for electroforming containing a metal to be precipitated and/or a compound of a metal to be precipitated; and precipitating the metal at a portion where the conductive substrate is exposed, is provided.
- a temperature of the molten salt bath for electroforming is set to at most 300° C. in precipitating the metal.
- a molten salt bath for electroforming is obtained by mixing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal.
- FIGS. 1A to 1 C are schematic cross-sectional views of a conductive substrate used in the present invention.
- FIG. 2 is a perspective side view schematically showing one example of an electroforming apparatus used in the present invention.
- FIG. 3 is a schematic perspective side view of an experimental apparatus used in Examples.
- FIGS. 4A to 4 D are schematic cross-sectional views showing a flow in manufacturing an electroforming mold using conventional Si trench etching.
- FIGS. 5A to 5 D are schematic cross-sectional views showing a flow in manufacturing an electroforming mold using conventional glass transfer.
- a molten salt bath for electroforming containing lithium bromide (LiBr), cesium bromide (CsBr), and a halide of an alkali metal and/or a halide of an alkaline-earth metal.
- a bromide instead of a chloride such as a conventional LiCl—KCl-based substance is mixed so that the molten salt bath for electroforming contains anions having a larger size as well as cations (Li + , Cs + ) having a size different from each other, thereby lowering affinity between anions and cations.
- the melting point of the molten salt composing the molten salt bath for electroforming is lowered.
- the molten salt bath for electroforming allowing electroforming at low temperature has been completed from such a technical concept. Though the molten salt bath for electroforming consisting essentially of iodides is assumed to allow electroforming at further lower temperature, the molten salt bath for electroforming has become unstable and actual electroforming could not be performed.
- electroforming can be performed at a low temperature, for example, in a range from at least 230° C. to at most 300° C. Accordingly, electroforming can be performed at a temperature at which the resist is not pyrolyzed. Therefore, instead of the electroforming mold obtained through conventional complex process steps, an electroforming mold solely having a resist pattern formed on the conductive substrate made of stainless or the like, that is, readily fabricated, is employed, so as to manufacture with high accuracy a metal product composed of a metal with high melting point and high strength such as chromium (Cr), tungsten (W) or titanium (Ti).
- Cr chromium
- W tungsten
- Ti titanium
- the molten salt bath for electroforming can be obtained by melting and mixing LiBr powder, CsBr powder, and powder of the halide of the alkali metal and/or powder of the halide of the alkaline-earth metal. It is to be noted that the molten salt bath for electroforming according to the present invention may contain other substances such as an oxide which is inevitably produced.
- Examples of the halides of the alkali metal other than LiBr and CsBr include lithium fluoride (LiF), lithium chloride (LiCl), lithium iodide (LiI), sodium fluoride (NaF), sodium chloride (NaCl), sodium bromide (NaBr), sodium iodide (NaI), potassium fluoride (KF), potassium chloride (KCl ), potassium bromide (KBr), potassium iodide (KI), rubidium fluoride (RbF), rubidium chloride (RbCl), rubidium bromide (RbBr), rubidium iodide (RbI), cesium fluoride (CsF), cesium chloride (CsCl), or cesium iodide (CsI).
- LiF lithium fluoride
- LiCl lithium chloride
- LiI lithium iodide
- NaF sodium fluoride
- NaCl sodium chloride
- NaBr sodium bromid
- Examples of the halides of the alkaline-earth metal include magnesium fluoride (MgF 2 ), magnesium chloride (MgCl 2 ), magnesium bromide (MgBr 2 ), magnesium iodide (MgI 2 ), calcium fluoride (CaF 2 ), calcium chloride (CaCl 2 ), calcium bromide (CaBr 2 ), calcium iodide (CaI 2 ), strontium fluoride (SrF 2 ), strontium chloride (SrCl 2 ), strontium bromide (SrBr 2 ), strontium iodide (SrI 2 ), barium fluoride (BaF 2 ), barium chloride (BaCl 2 ), barium bromide (BaBr 2 ), or barium iodide (BaI 2 ).
- magnesium fluoride MgF 2
- magnesium chloride MgCl 2
- magnesium bromide MgBr 2
- KBr is preferably mixed as a halide of the alkali metal.
- cations (K + ) of the alkali metal having a size intermediate between that of Li + and Cs + can further be contained in the molten salt bath for electroforming. Therefore, affinity between the cation and the anion in the molten salt bath for electroforming can further be lowered.
- electroforming at further low temperature can be performed.
- at least one of the halide of the alkali metal and the halide of the alkaline-earth metal should only be contained.
- one type or two or more types of the halides may be contained.
- mixing is performed such that the sum of the mole fraction of LiBr and the mole fraction of CsBr is set to be within a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming having an amount of substance of 1. If the sum of the mole fractions is less than 0.5, an effect to lower the affinity between the anion and the cation by containing anions having a larger size and cations (Li + , Cs + ) having different sizes in the molten salt bath for electroforming cannot sufficiently be attained.
- mixing is performed such that the mole ratio of LiBr to CsBr (LiBr/CsBr) is set to be within a range from at least 1.8 to at most 2.5. If the mole ratio (LiBr/CsBr) is less than 1.8, too many cations (Cs + ) having a larger size tend to be present in the molten salt bath for electroforming. Accordingly, an effect to lower the affinity between the anion and the cation by containing cations having different sizes cannot sufficiently be attained.
- LiBr, CsBr, and the halide of the alkali metal and/or the halide of the alkaline-earth metal are mixed such that the molten salt bath for electroforming has a eutectic composition.
- electroforming can be performed at a temperature in the vicinity of a eutectic temperature.
- the molten salt bath for electroforming according to the present invention can have at least ternary composition, for example: LiBr—CsBr—KBr, LiBr—CsBr—LiF, LiBr—CsBr—LiCl, LiBr—CsBr—LiI, LiBr—CsBr—NaF, LiBr—CsBr—NaCl, LiBr—CsBr—NaBr, LiBr—CsBr—NaI, LiBr—CsBr—KF, LiBr—CsBr—KCl, LiBr—CsBr—KI, LiBr—CsBr—RbF, LiBr—CsBr—RbCl, LiBr—CsBr—RbBr, LiBr—CsBr—RbI, LiBr—CsBr—CsF, LiBr—CsBr—CsBr—CsF, LiB
- conductive substrate 1 made, for example, of stainless, copper (Cu), iron (Fe), nickel (Ni), or the like is prepared.
- resist 2 is applied to conductive substrate 1 and irradiated with UV (ultraviolet) light or SR light.
- UV ultraviolet
- a UV resist or the like used as resist 2 if UV light is used for irradiating resist 2
- PMMA polymethylmethacrylate
- Electroforming mold 3 is thus formed.
- electroforming mold 3 formed with such a simplified method can be employed.
- electroforming mold 3 is placed as a cathode in an electroforming apparatus 4 shown in the schematic perspective side view in FIG. 2 , for example, so as to perform electroforming.
- electroforming apparatus 4 including a stainless holder 5 , a cover 6 capable of sealing stainless holder 5 , an anode 7 , a crucible 8 made of high-purity alumina, a reference electrode 13 , and a thermocouple 15 for measuring a temperature is placed in a globe box (not shown) under an Ar atmosphere.
- Molten salt bath for electroforming 9 obtained by melting and mixing LiBr powder, CsBr powder and the like is placed in crucible 8 .
- molten salt bath for electroforming 9 contains a metal to be precipitated and/or a compound of the metal to be precipitated in electroforming mold 3 .
- a metal with high melting point and high strength such as Cr, W or Ti is suitably used as the metal to be precipitated in electroforming mold 3 . If such a metal is added in a solution and electroforming is performed, H 2 is produced at the cathode in an amount larger than the metal, because a reduction potential of such a metal is lower (baser) than that of hydrogen in the entire pH range.
- the metal such as Cr, W or Ti has a reduction potential lower (baser) than that of the alkali metal and the alkaline-earth metal, and therefore, such a metal can be precipitated at the cathode.
- examples of the compound of the metal to be precipitated include tungsten chloride (WCl 2 ), chromium chloride (CrCl 2 ), titanium chloride (TiCl 2 ), tungsten bromide (WBr 2 ), chromium bromide (CrBr 2 ), tungsten fluoride (WF 2 ), and chromium fluoride (CrF 2 ).
- Electroforming is performed in a state in which molten salt bath for electroforming 9 is heated to approximately 200 to 300° C.
- a current having current density of not smaller than 1 mA/cm 2 to not larger than 500 mA/cm 2 preferably not smaller than 10 mA/cm 2 to not larger than 500 mA/cm 2 , and further preferably not smaller than 50 mA/cm 2 to not larger than 500 mA/cm 2 is fed between anode 7 and electroforming mold 3 serving as the cathode, the metal described above is precipitated on the surface of electroforming mold 3 serving as the cathode, thereby forming a metal product having a prescribed shape.
- electroforming mold 3 is taken out from molten salt bath for electroforming 9 and washed with water. Then, a desired metal product is separated from electroforming mold 3 , and resist 2 adhered to the separated metal product is removed, for example, by ashing. Thus, a metal product having a prescribed shape is obtained.
- the temperature of molten salt bath for electroforming 9 in precipitation of the metal is set to not larger than 300° C. Therefore, even if electroforming mold 3 is immersed in molten salt bath for electroforming 9 , resist 2 formed on electroforming mold 3 is not pyrolyzed. Since electroforming mold 3 solely having resist 2 formed on conductive substrate 1 can be employed, a metal product with high accuracy can be obtained with further lower cost.
- the molten salt bath for electroforming and the method of manufacturing a metal product using the same according to the present invention have characteristics as described above. Therefore, the molten salt bath for electroforming and the method are suitably used for manufacturing a metal product having a Vickers hardness (HV) of not smaller than 600 to not larger than 2000 (a metal mold, for example).
- HV Vickers hardness
- molten salt baths for electroforming 9 in Examples 1 to 9 having compositions shown in Table 1 were prepared. Then, CrCl 2 was added to each molten salt bath for electroforming in such an amount that the mole fraction thereof attains 0.01 with respect to the entire molten salt bath for electroforming. Thereafter, in a state in which the temperatures of respective molten salt baths for electroforming 9 in Examples 1 to 9 were set to 250° C. or 300° C., a current of 10 mA/cm 2 , 50 mA/cm 2 or 100 mA/cm 2 was fed between a Cr plate 17 and an Ni plate 16 in experimental apparatus 18 for 10 minutes.
- Example 3 was found to be considerably suitable as the molten salt bath for electroforming at low temperature.
- a photoresist having a thickness of 50 ⁇ m consisting of PMMA was applied on the surface of an Ni substrate in a square shape having a side of 1 cm.
- the photoresist was irradiated with SR light, and the resist in an area other than the area irradiated with the SR light was removed.
- a resist pattern in a grid having a line/space of 50 ⁇ m/50 ⁇ m was thus formed on the Ni substrate.
- CrCl 2 was added to molten salt bath for electroforming 9 in such an amount that the mole fraction thereof attains 0.01 with respect to the entire molten salt bath for electroforming 9 .
- electroforming mold 3 was taken out from electroforming apparatus 4 and washed with water, whereby salt adhered to the electroformed product composed of Cr was removed. Then, after electroforming mold 3 and the electroformed product were dried, the surface of the electroformed product was polished in order to improve smoothness and to adjust thickness thereof to 200 ⁇ m.
- the electrode potential at the cathode with respect to reference electrode 13 during electroforming gradually increased from ⁇ 0.85V, and attained to ⁇ 0.76V 30 minutes later. Then, immediately after the current amount was doubled, the electrode potential fell to ⁇ 0.90V, and thereafter rose again to attain ⁇ 0.75V at completion of electroforming.
- a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same can be provided.
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Abstract
A molten salt bath for electroforming containing lithium bromide, cesium bromide and a halide of an alkali metal and/or a halide of an alkaline-earth metal is provided. In addition, a method of manufacturing a metal product including the steps of: forming a resist pattern on a conductive substrate and exposing a portion of the conductive substrate; immersing the conductive substrate having the resist pattern formed into the molten salt bath for electroforming, the molten salt bath for electroforming containing a metal to be precipitated and/or a compound of a metal to be precipitated; and precipitating the metal at a portion where the conductive substrate is exposed, is provided. Further, a molten salt bath for electroforming obtained by mixing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal is provided.
Description
- 1. Field of the Invention
- The present invention relates to a molten salt bath for electroforming and a method of manufacturing a metal product using the same, and more particularly to a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same.
- 2. Description of the Background Art
- Conventionally, an LiCl—KCl-based eutectic mixture obtained by mixing lithium chloride (LiCl) and potassium chloride (KCl) has generally been used as a molten salt bath for electroforming.
- For example, 0.1 to 10 mass % of tungsten chloride (WCl 2) with respect to the total mass of the molten salt bath for electroforming is added to the molten salt bath for electroforming prepared by mixing 45 mass % of LiCl and 55 mass % of KCl with respect to the total mass of the molten salt bath for electroforming. Then, a pair of electrodes consisting of an anode and a cathode is immersed into the molten salt bath for electroforming, and thereafter, a current of several A/dm2 is fed between these electrodes in a heated state around 500° C. under an Argon (Ar) atmosphere. In this manner, tungsten (W) is precipitated on the surface of the cathode, thereby forming a metal product with a prescribed shape.
- On the other hand, the LiCl—KCl-based molten salt bath for electroforming has a high melting point around 352° C., and accordingly, electroforming had to be performed at a temperature higher than that, for example, at approximately 500° C. as described above. If an electroforming mold having a resist pattern formed on the surface of a conductive substrate made of stainless or the like is used as the cathode, the resist consisting essentially of acrylic or the like is pyrolyzed, and the metal product in a prescribed shape cannot be obtained.
- Then, for the molten salt bath for electroforming requiring a high temperature such as the LiCl—KCl-based molten salt bath, an electroforming mold obtained by silicon (Si) trench etching or an electroforming mold obtained by glass transfer may be employed as the cathode.
- A method of manufacturing an electroforming mold using Si trench etching will now be described with reference to FIGS. 4A to 4D. It is noted that the same reference characters refer to the same or corresponding components in the figures.
- First, as shown in FIG. 4A, a nickel (Ni)
film 11 is formed on anSi substrate 10 by sputtering. Then, Ni is further precipitated on Nifilm 11 by electroplating, so as to increase a thickness ofNi film 11, as shown in FIG. 4B. Thereafter, as shown in FIG. 4C,Si substrate 10 is subjected to trench etching, so as to patternSi substrate 10 in a prescribed shape. Finally, as shown in FIG. 4D, ametal film 12 is vapor-deposited on the surface of exposed Nifilm 11 andSi substrate 10. Thus, the electroforming mold is manufactured by using Si trench etching. - A method of manufacturing an electroforming mold using glass transfer will now be described with reference to FIGS. 5A to 5D. First, as shown in FIG. 5A, a
resist 19 is patterned on the surface ofconductive substrate 1 made of stainless or the like by SR lithography using synchtron radiation (SR) light. Then, as shown in FIG. 5B, Nifilm 11 is formed onconductive substrate 1 in a prescribed shape by electroforming. Thereafter, as shown in FIG. 5C,resist 19 is removed, and Ni film. 11 is separated fromconductive substrate 1. Finally, the shape of Nifilm 11 is transferred onto aglass 14 as shown in FIG. 5D, and thereafter,metal film 12 is vapor-deposited on the surface ofglass 14. In this manner, the electroforming mold is manufactured by using glass transfer. - In the electroforming mold obtained by Si trench etching, however, a stripe pattern caused by trench etching is formed. Accordingly, a similar stripe pattern is also formed on the surface of the metal product obtained by using the electroforming mold.
- In addition, in the electroforming mold obtained by glass transfer, a metal precipitation surface of the electroforming mold is made coarse by repeating transfer for a plurality of times. Accordingly, the metal product obtained by using the electroforming mold has had poor accuracy.
- Moreover, a number of process steps are required in manufacturing the electroforming molds as described above. Therefore, manufacturing the electroforming mold has been expensive.
- In view of the problems above, an object of the present invention is to provide a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same.
- According to the present invention, a molten salt bath for electroforming containing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal is provided. Here, it is considered that a substance contained in the molten salt bath for electroforming according to the present invention is at least partially ionized in the molten salt bath for electroforming.
- Preferably, in the molten salt bath for electroforming according to the present invention, the halide of the alkali metal is potassium bromide.
- In addition, preferably in the molten salt bath for electroforming according to the present invention, the sum of a mole fraction of lithium bromide and a mole fraction of cesium bromide is set to be within a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming.
- Further, preferably in the molten salt bath for electroforming according to the present invention, a mole ratio of lithium bromide to cesium bromide (lithium bromide/cesium bromide) is set to be within a range from at least 1.8 to at most 2.5.
- Preferably, the molten salt bath for electroforming according to the present invention has a eutectic composition.
- In addition, according to the present invention, a method of manufacturing a metal product including the steps of: forming a resist pattern on a conductive substrate and exposing a portion of the conductive substrate; immersing the conductive substrate having the resist pattern formed into the molten salt bath for electroforming described above, the molten salt bath for electroforming containing a metal to be precipitated and/or a compound of a metal to be precipitated; and precipitating the metal at a portion where the conductive substrate is exposed, is provided.
- In the method of manufacturing a metal product according to the present invention, preferably, a temperature of the molten salt bath for electroforming is set to at most 300° C. in precipitating the metal.
- Further according to the present invention, a molten salt bath for electroforming is obtained by mixing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal.
- The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
- FIGS. 1A to 1C are schematic cross-sectional views of a conductive substrate used in the present invention.
- FIG. 2 is a perspective side view schematically showing one example of an electroforming apparatus used in the present invention.
- FIG. 3 is a schematic perspective side view of an experimental apparatus used in Examples.
- FIGS. 4A to 4D are schematic cross-sectional views showing a flow in manufacturing an electroforming mold using conventional Si trench etching.
- FIGS. 5A to 5D are schematic cross-sectional views showing a flow in manufacturing an electroforming mold using conventional glass transfer.
- (Molten Salt Bath for Electroforming)
- According to the present invention, a molten salt bath for electroforming containing lithium bromide (LiBr), cesium bromide (CsBr), and a halide of an alkali metal and/or a halide of an alkaline-earth metal is provided. Here, a bromide instead of a chloride such as a conventional LiCl—KCl-based substance is mixed so that the molten salt bath for electroforming contains anions having a larger size as well as cations (Li +, Cs+) having a size different from each other, thereby lowering affinity between anions and cations. In addition, by mixing three or more halides, the melting point of the molten salt composing the molten salt bath for electroforming is lowered. The molten salt bath for electroforming allowing electroforming at low temperature has been completed from such a technical concept. Though the molten salt bath for electroforming consisting essentially of iodides is assumed to allow electroforming at further lower temperature, the molten salt bath for electroforming has become unstable and actual electroforming could not be performed.
- When the molten salt bath for electroforming is used, electroforming can be performed at a low temperature, for example, in a range from at least 230° C. to at most 300° C. Accordingly, electroforming can be performed at a temperature at which the resist is not pyrolyzed. Therefore, instead of the electroforming mold obtained through conventional complex process steps, an electroforming mold solely having a resist pattern formed on the conductive substrate made of stainless or the like, that is, readily fabricated, is employed, so as to manufacture with high accuracy a metal product composed of a metal with high melting point and high strength such as chromium (Cr), tungsten (W) or titanium (Ti).
- The molten salt bath for electroforming can be obtained by melting and mixing LiBr powder, CsBr powder, and powder of the halide of the alkali metal and/or powder of the halide of the alkaline-earth metal. It is to be noted that the molten salt bath for electroforming according to the present invention may contain other substances such as an oxide which is inevitably produced.
- Examples of the halides of the alkali metal other than LiBr and CsBr include lithium fluoride (LiF), lithium chloride (LiCl), lithium iodide (LiI), sodium fluoride (NaF), sodium chloride (NaCl), sodium bromide (NaBr), sodium iodide (NaI), potassium fluoride (KF), potassium chloride (KCl ), potassium bromide (KBr), potassium iodide (KI), rubidium fluoride (RbF), rubidium chloride (RbCl), rubidium bromide (RbBr), rubidium iodide (RbI), cesium fluoride (CsF), cesium chloride (CsCl), or cesium iodide (CsI).
- Examples of the halides of the alkaline-earth metal include magnesium fluoride (MgF 2), magnesium chloride (MgCl2), magnesium bromide (MgBr2), magnesium iodide (MgI2), calcium fluoride (CaF2), calcium chloride (CaCl2), calcium bromide (CaBr2), calcium iodide (CaI2), strontium fluoride (SrF2), strontium chloride (SrCl2), strontium bromide (SrBr2), strontium iodide (SrI2), barium fluoride (BaF2), barium chloride (BaCl2), barium bromide (BaBr2), or barium iodide (BaI2).
- Among others, KBr is preferably mixed as a halide of the alkali metal. In this case, cations (K +) of the alkali metal having a size intermediate between that of Li+ and Cs+ can further be contained in the molten salt bath for electroforming. Therefore, affinity between the cation and the anion in the molten salt bath for electroforming can further be lowered. In particular, when the molten salt bath for electroforming obtained by mixing LiBr, CsBr and KBr is used, electroforming at further low temperature can be performed. Here, at least one of the halide of the alkali metal and the halide of the alkaline-earth metal should only be contained. In addition, one type or two or more types of the halides may be contained.
- Preferably, mixing is performed such that the sum of the mole fraction of LiBr and the mole fraction of CsBr is set to be within a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming having an amount of substance of 1. If the sum of the mole fractions is less than 0.5, an effect to lower the affinity between the anion and the cation by containing anions having a larger size and cations (Li +, Cs+) having different sizes in the molten salt bath for electroforming cannot sufficiently be attained. On the other hand, if the sum of the mole fractions is 0.95 or over, an effect to lower the melting point of the molten salt composing the molten salt bath for electroforming by mixing a halide other than LiBr and CsBr cannot sufficiently be attained.
- Moreover, preferably, mixing is performed such that the mole ratio of LiBr to CsBr (LiBr/CsBr) is set to be within a range from at least 1.8 to at most 2.5. If the mole ratio (LiBr/CsBr) is less than 1.8, too many cations (Cs +) having a larger size tend to be present in the molten salt bath for electroforming. Accordingly, an effect to lower the affinity between the anion and the cation by containing cations having different sizes cannot sufficiently be attained. On the other hand, if the mole ratio (LiBr/CsBr) is over 2.5, too many cations (Li+) having a smaller size tend to be present in the molten salt bath for electroforming. Accordingly, an effect to lower the affinity between the anion and the cation by containing cations having different sizes cannot sufficiently be attained.
- Furthermore, preferably, LiBr, CsBr, and the halide of the alkali metal and/or the halide of the alkaline-earth metal are mixed such that the molten salt bath for electroforming has a eutectic composition. In this case, as the molten salt bath for electroforming can be prepared at a eutectic point, electroforming can be performed at a temperature in the vicinity of a eutectic temperature.
- From the viewpoint of the technical concept described above, the molten salt bath for electroforming according to the present invention can have at least ternary composition, for example: LiBr—CsBr—KBr, LiBr—CsBr—LiF, LiBr—CsBr—LiCl, LiBr—CsBr—LiI, LiBr—CsBr—NaF, LiBr—CsBr—NaCl, LiBr—CsBr—NaBr, LiBr—CsBr—NaI, LiBr—CsBr—KF, LiBr—CsBr—KCl, LiBr—CsBr—KI, LiBr—CsBr—RbF, LiBr—CsBr—RbCl, LiBr—CsBr—RbBr, LiBr—CsBr—RbI, LiBr—CsBr—CsF, LiBr—CsBr—CsCl, LiBr—CsBr—CsI, LiBr—CsBr—MgF 2, LiBr—CsBr—MgCl2, LiBr—CsBr—MgBr2, LiBr—CsBr—MgI2, LiBr—CsBr—CaF2, LiBr—CsBr—CaCl2, LiBr—CsBr—CaBr2, LiBr—CsBr—CaI2, LiBr—CsBr—SrF2, LiBr—CsBr—SrCl2, LiBr—CsBr—SrBr2, LiBr—CsBr—SrI2, LiBr—CsBr—BaF2, LiBr—CsBr—BaCl2, LiBr—CsBr—BaBr2, LiBr—CsBr—BaI2, LiBr—CsBr—KBr—LiF, LiBr—CsBr—KBr—LiCl, LiBr—CsBr—KBr—LiI, LiBr—CsBr—KBr—NaF, LiBr—CsBr—KBr—NaCl, LiBr—CsBr—KBr—NaBr, LiBr—CsBr—KBr—NaI, LiBr—CsBr—KBr—KF, LiBr—CsBr—KBr—KCl, LiBr—CsBr—KBr—KI, LiBr—CsBr—KBr—RbF, LiBr—CsBr—KBr—RbCl, LiBr—CsBr—KBr—RbBr, LiBr—CsBr—KBr—RbI, LiBr—CsBr—KBr—CsF, LiBr—CsBr—KBr—CsCl, LiBr—CsBr—KBr—CsI, LiBr—CsBr—KBr—MgF2, LiBr—CsBr—KBr—MgCl2, LiBr—CsBr—KBr—MgBr2, LiBr—CsBr—KBr—MgI2, LiBr—CsBr—KBr—CaF2, LiBr—CsBr—KBr—CaCl2, LiBr—CsBr—KBr—CaBr2, LiBr—CsBr—KBr—CaI2, LiBr—CsBr—KBr—SrF2, LiBr—CsBr—KBr—SrCl2, LiBr—CsBr—KBr—SrBr2, LiBr—CsBr—KBr—SrI2, LiBr—CsBr—KBr—BaF2, LiBr—CsBr—KBr—BaCl2, LiBr—CsBr—KBr—BaBr2, or LiBr—CsBr—KBr—BaI2. It is to be noted that notation such as LiBr—CsBr—MX in the description above means that LiBr, CsBr and MX are mixed to compose the molten salt bath for electroforming according to the present invention.
- (Method of Manufacturing Metal Product)
- In the following, a preferred example of a method of manufacturing a metal product according to the present invention will be described with reference to the figures.
- First, referring to FIG. 1A,
conductive substrate 1 made, for example, of stainless, copper (Cu), iron (Fe), nickel (Ni), or the like is prepared. Then, referring to FIG. 1B, resist 2 is applied toconductive substrate 1 and irradiated with UV (ultraviolet) light or SR light. Here, a UV resist or the like used as resist 2 if UV light is used for irradiating resist 2, and PMMA (polymethylmethacrylate) or the like is used as resist 2 if SR light is used for irradiation. - Then, referring to FIG. 1C, a portion except for resist 2 irradiated with the UV light or the SR light is removed to form a resist pattern on
conductive substrate 1, and the surface ofconductive substrate 1 is partially exposed.Electroforming mold 3 is thus formed. In the present invention,electroforming mold 3 formed with such a simplified method can be employed. -
Such electroforming mold 3 is placed as a cathode in anelectroforming apparatus 4 shown in the schematic perspective side view in FIG. 2, for example, so as to perform electroforming. Referring to FIG. 2,electroforming apparatus 4 including astainless holder 5, acover 6 capable of sealingstainless holder 5, ananode 7, acrucible 8 made of high-purity alumina, areference electrode 13, and athermocouple 15 for measuring a temperature is placed in a globe box (not shown) under an Ar atmosphere. - Molten salt bath for
electroforming 9 obtained by melting and mixing LiBr powder, CsBr powder and the like is placed incrucible 8. Here, molten salt bath forelectroforming 9 contains a metal to be precipitated and/or a compound of the metal to be precipitated inelectroforming mold 3. A metal with high melting point and high strength such as Cr, W or Ti is suitably used as the metal to be precipitated inelectroforming mold 3. If such a metal is added in a solution and electroforming is performed, H2 is produced at the cathode in an amount larger than the metal, because a reduction potential of such a metal is lower (baser) than that of hydrogen in the entire pH range. Accordingly, if a sufficiently low (base) potential initiating precipitation of a metal is applied, H2 is produced in a large amount, and it is extremely difficult to precipitate a metal in a film shape. If molten salt bath forelectroforming 9 according to the present invention is used, however, the metal such as Cr, W or Ti has a reduction potential lower (baser) than that of the alkali metal and the alkaline-earth metal, and therefore, such a metal can be precipitated at the cathode. Here, examples of the compound of the metal to be precipitated include tungsten chloride (WCl2), chromium chloride (CrCl2), titanium chloride (TiCl2), tungsten bromide (WBr2), chromium bromide (CrBr2), tungsten fluoride (WF2), and chromium fluoride (CrF2). - Electroforming is performed in a state in which molten salt bath for
electroforming 9 is heated to approximately 200 to 300° C. Here, if a current having current density of not smaller than 1 mA/cm2 to not larger than 500 mA/cm2, preferably not smaller than 10 mA/cm2 to not larger than 500 mA/cm2, and further preferably not smaller than 50 mA/cm2 to not larger than 500 mA/cm2 is fed betweenanode 7 andelectroforming mold 3 serving as the cathode, the metal described above is precipitated on the surface ofelectroforming mold 3 serving as the cathode, thereby forming a metal product having a prescribed shape. - In other words, if a current having a current density in the above-described range is fed, a metal product with higher hardness can be formed in a shorter period of time.
- After electroforming is completed,
electroforming mold 3 is taken out from molten salt bath forelectroforming 9 and washed with water. Then, a desired metal product is separated from electroformingmold 3, and resist 2 adhered to the separated metal product is removed, for example, by ashing. Thus, a metal product having a prescribed shape is obtained. - As described above, in the present invention, the temperature of molten salt bath for
electroforming 9 in precipitation of the metal is set to not larger than 300° C. Therefore, even if electroformingmold 3 is immersed in molten salt bath forelectroforming 9, resist 2 formed onelectroforming mold 3 is not pyrolyzed. Since electroformingmold 3 solely having resist 2 formed onconductive substrate 1 can be employed, a metal product with high accuracy can be obtained with further lower cost. - (Application)
- The molten salt bath for electroforming and the method of manufacturing a metal product using the same according to the present invention have characteristics as described above. Therefore, the molten salt bath for electroforming and the method are suitably used for manufacturing a metal product having a Vickers hardness (HV) of not smaller than 600 to not larger than 2000 (a metal mold, for example).
- In
crucible 8 in anexperimental apparatus 18 shown in the schematic perspective side view in FIG. 3, molten salt baths forelectroforming 9 in Examples 1 to 9 having compositions shown in Table 1 were prepared. Then, CrCl2 was added to each molten salt bath for electroforming in such an amount that the mole fraction thereof attains 0.01 with respect to the entire molten salt bath for electroforming. Thereafter, in a state in which the temperatures of respective molten salt baths forelectroforming 9 in Examples 1 to 9 were set to 250° C. or 300° C., a current of 10 mA/cm2, 50 mA/cm2 or 100 mA/cm2 was fed between aCr plate 17 and anNi plate 16 inexperimental apparatus 18 for 10 minutes. States of Cr precipitated onNi plate 16 were evaluated with visual inspection and with an optical microscope, based on a standard described below. Evaluation results are shown in Table 1. Note that the experiment was conducted in the globe box under the Ar atmosphere.TABLE 1 Cr Precipitation State Composition Ratio 250° C. 300° C. Composition (mol) 10 50 100 10 50 100 1 2 3 1:2:3 1 + 2/ total 1/2 (mA/cm2) (mA/cm2) (mA/cm2) (mA/cm2) (mA/cm2) (mA/cm2) Example 1 LiBr CsBr KBr 31.1:13.9:55.0 0.45 2.24 C C C B C C Example 2 LiBr CsBr KBr 34.6:15.4:50.0 0.50 2.24 B B B B B B Example 3 LiBr CsBr KBr 56.1:25.0:18.9 0.811 2.24 A A A A A A Example 4 LiBr CsBr KBr 65.7:29.2:5.1 0.949 2.24 B B B B B B Example 5 LiBr CsBr KBr 67.1:29.9:3.0 0.97 2.24 C C C B C C Example 6 LiBr CsBr KBr 49.9:31.2:18.9 0.811 1.6 B B C B B C Example 7 LiBr CsBr KBr 52.1:29.0:18.9 0.811 1.8 B B B B B B Example 8 LiBr CsBr KBr 57.9:23.2:18.9 0.811 2.5 B B B B B B Example 9 LiBr CsBr KBr 59.2:21.9:18.9 0.811 2.7 B B C B B C - Standard of Evaluation
- A . . . Extremely good precipitation and metallic luster were observed.
- B . . . Good precipitation and metallic luster were observed.
- C . . . Precipitation was observed, however, smoothness was insufficient. No metallic luster was observed.
- D . . . Almost no precipitation was observed.
- Consequently, as shown in Table 1, in Examples 2 to 4 and Examples 6 to 9 where the sum of the mole fraction of LiBr and the mole fraction of CsBr is in a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming, the precipitation state of Cr at 250° C. and 300° C. was better than that in Example 1 (0.45) and Example 5 (0.97) where the sum of the mole fractions was not in the above-described range. Examples 2 to 4 and Examples 6 to 9 were found to be more suitable as the molten salt bath for electroforming.
- In addition, in Examples 2 to 4 and Examples 7 to 8 where the sum of the mole fraction of LiBr and the mole fraction of CsBr is in a range from at least 0.5 to less than 0.95 with respect to the entire molten salt bath for electroforming and the mole ratio of LiBr to CsBr is in a range from at least 1.8 to at most 2.5, the precipitation state of Cr when the current of 100 mA/cm 2 was fed was better than that in Example 6 (1.6) and Example 9 (2.7) where the mole ratio (LiBr/CsBr) was not in the above-described range. Examples 2 to 4 and Examples 7 to 8 were found to be more suitable as the molten salt bath for electroforming.
- Moreover, in Example 3 having the eutectic composition (having mole ratio of LiBr:CsBr:KBr=56.1:25:18.9), the precipitation state of Cr was considerably better than that in other Examples not having the eutectic composition (Examples 1 to 2 and 4 to 9) not only at 300° C. but also at a low temperature of 250° C. Example 3 was found to be considerably suitable as the molten salt bath for electroforming at low temperature.
- A photoresist having a thickness of 50 μm consisting of PMMA was applied on the surface of an Ni substrate in a square shape having a side of 1 cm. The photoresist was irradiated with SR light, and the resist in an area other than the area irradiated with the SR light was removed. A resist pattern in a grid having a line/space of 50 μm/50 μm was thus formed on the Ni substrate.
- The Ni substrate was immersed as
electroforming mold 3 in 500 grams of molten salt bath forelectroforming 9 placed incrucible 8 inelectroforming apparatus 4 shown in FIG. 2. Here, molten salt bath forelectroforming 9 is composed of LiBr, CsBr and KBr (mole ratio of LiBr:CsBr:KBr=56.1:25:18.9). CrCl2 was added to molten salt bath forelectroforming 9 in such an amount that the mole fraction thereof attains 0.01 with respect to the entire molten salt bath forelectroforming 9. - Then, a current having a current density of 100 mA/cm 2 was fed between
anode 7 composed of Cr andelectroforming mold 3 for 50 minutes in a state where the temperature of molten salt bath forelectroforming 9 was set to 250° C. Thereafter, an amount of the current was doubled, and the current of doubled amount was fed for further 200 minutes. In this manner, an electroformed product composed of Cr was obtained onelectroforming mold 3. Here, an electrode potential at the cathode with respect toreference electrode 13 during electroforming gradually increased from −0.90V, and attained to −0.80V 30 minutes later. Then, immediately after the current amount was doubled, the electrode potential fell to −0.93V, and thereafter rose again to attain −0.79V at completion of electroforming. - Thereafter,
electroforming mold 3 was taken out fromelectroforming apparatus 4 and washed with water, whereby salt adhered to the electroformed product composed of Cr was removed. Then, after electroformingmold 3 and the electroformed product were dried, the surface of the electroformed product was polished in order to improve smoothness and to adjust thickness thereof to 200 μm. - Finally, a resin adhered to the electroformed product mechanically separated from electroforming
mold 3 was removed with plasma ashing, and a metal product composed of Cr and having convex portions formed in a grid and concave portions arranged in a grid between protrusions was obtained. - Thus obtained metal product composed of Cr had a Vickers hardness (HV) of 800. Here, the metal product in Example 10 was also manufactured in the globe box under the Ar atmosphere.
- A metal product composed of Cr was obtained in the same manner as in Example 10, except that molten salt bath for
electroforming 9 composed of LiCl and KCl (having a mass ratio of LiCl:KCl=45:55) was used to perform electroforming at a high temperature of 400° C. Here, the electrode potential at the cathode with respect toreference electrode 13 during electroforming gradually increased from −0.85V, and attained to −0.76V 30 minutes later. Then, immediately after the current amount was doubled, the electrode potential fell to −0.90V, and thereafter rose again to attain −0.75V at completion of electroforming. - When the metal product composed of Cr obtained in Comparative Example 1 was observed with an SEM (scanning electron microscope), it was found that the resist pattern was not transferred to this metal product. This may be because the resist on
electroforming mold 3 deformed during electroforming due to the high temperature at 400° C. - As described above, according to the present invention, a molten salt bath for electroforming allowing electroforming at low temperature and a method of manufacturing a metal product using the same can be provided.
- Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.
Claims (8)
1. A molten salt bath for electroforming, containing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal.
2. The molten salt bath for electroforming according to claim 1 , wherein
said halide of the alkali metal is potassium bromide.
3. The molten salt bath for electroforming according to claim 1 , wherein
a sum of a mole fraction of said lithium bromide and a mole fraction of said cesium bromide is set to be within a range from at least 0.5 to less than 0.95 with respect to entire said molten salt bath for electroforming.
4. The molten salt bath for electroforming according to claim 1 , wherein
a mole ratio of said lithium bromide to said cesium bromide (lithium bromide/cesium bromide) is set to be within a range from at least 1.8 to at most 2.5.
5. The molten salt bath for electroforming according to claim 1 , wherein
said molten salt bath for electroforming has a eutectic composition.
6. A method of manufacturing a metal product, comprising the steps of:
forming a resist pattern on a conductive substrate and exposing a portion of said conductive substrate;
immersing said conductive substrate having said resist pattern formed into the molten salt bath for electroforming according to claim 1 , the molten salt bath for electroforming containing a metal to be precipitated and/or a compound of a metal to be precipitated; and
precipitating said metal at a portion where said conductive substrate is exposed.
7. The method of manufacturing a metal product according to claim 6 , wherein
a temperature of said molten salt bath for electroforming is set to at most 300° C. in precipitating said metal.
8. A molten salt bath for electroforming, obtained by mixing lithium bromide, cesium bromide, and a halide of an alkali metal and/or a halide of an alkaline-earth metal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003-179788(P) | 2003-06-24 | ||
| JP2003179788A JP3901133B2 (en) | 2003-06-24 | 2003-06-24 | Molten salt bath for electroforming and method for producing metal product using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20040262163A1 true US20040262163A1 (en) | 2004-12-30 |
Family
ID=33535090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/776,264 Abandoned US20040262163A1 (en) | 2003-06-24 | 2004-02-12 | Molten salt bath for electroforming and method of manufacturing metal product using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20040262163A1 (en) |
| JP (1) | JP3901133B2 (en) |
| KR (1) | KR101079892B1 (en) |
| CN (1) | CN100344796C (en) |
| DE (1) | DE102004014402A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100243456A1 (en) * | 2009-03-27 | 2010-09-30 | Sumitomo Electric Industries, Ltd. | Molten salt bath, method for preparing the same, and tungsten film |
| US20140353159A1 (en) * | 2013-06-04 | 2014-12-04 | The Ohio State University | Electrochemical method of lithium iron arsenic superconductor preparation |
| US20180209057A1 (en) * | 2015-07-16 | 2018-07-26 | Battelle Energy Alliance, Llc | Methods and systems for aluminum electroplating |
| US20230159340A1 (en) * | 2020-05-06 | 2023-05-25 | The University Of Chicago | Covalent surface modification of two-dimensional metal carbides |
| US11746434B2 (en) | 2021-07-21 | 2023-09-05 | Battelle Energy Alliance, Llc | Methods of forming a metal coated article |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4883534B2 (en) * | 2008-03-26 | 2012-02-22 | 住友電気工業株式会社 | Molten salt bath, method for producing molten salt bath, and tungsten precipitate |
| JP5544746B2 (en) * | 2009-04-20 | 2014-07-09 | 東ソー株式会社 | Method for producing metallic indium |
| CN102569836A (en) * | 2010-12-24 | 2012-07-11 | 中国电子科技集团公司第十八研究所 | Preparation method of quadruple inorganic molten salt electrolyte |
| CN102544536A (en) * | 2010-12-24 | 2012-07-04 | 中国电子科技集团公司第十八研究所 | Electrolyte for thermal battery and provided with 4-component inorganic fused salt |
| CN102437345A (en) * | 2011-12-19 | 2012-05-02 | 梅岭化工厂 | Low-melting-point high-conductivity thermal battery electrolyte and preparation method thereof |
| JP6889447B2 (en) * | 2016-11-22 | 2021-06-18 | 住友電気工業株式会社 | Titanium plating solution manufacturing method and titanium plating product manufacturing method |
| JP7097572B2 (en) * | 2018-08-31 | 2022-07-08 | 国立大学法人京都大学 | Manufacturing method of metallic titanium |
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| US6458218B1 (en) * | 2001-01-16 | 2002-10-01 | Linamar Corporation | Deposition and thermal diffusion of borides and carbides of refractory metals |
| JP2003213484A (en) * | 2002-01-16 | 2003-07-30 | Nippon Steel Corp | Mg-added electric Zn plating bath and plating method using the bath |
| JP2004084059A (en) | 2002-07-04 | 2004-03-18 | Sumitomo Electric Ind Ltd | Plating mold having fine pattern, fine metal structure, fine processing mold, method of manufacturing plating mold having fine pattern, and method of manufacturing fine metal structure |
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- 2003-06-24 JP JP2003179788A patent/JP3901133B2/en not_active Expired - Fee Related
-
2004
- 2004-02-12 US US10/776,264 patent/US20040262163A1/en not_active Abandoned
- 2004-02-16 CN CNB2004100050435A patent/CN100344796C/en not_active Expired - Fee Related
- 2004-03-24 DE DE102004014402A patent/DE102004014402A1/en not_active Withdrawn
- 2004-06-09 KR KR1020040042024A patent/KR101079892B1/en not_active Expired - Fee Related
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|---|---|---|---|---|
| US2935454A (en) * | 1953-05-01 | 1960-05-03 | Tokumoto Shin-Ichi | Method of the electrodeposition of titanium metal |
| US2913332A (en) * | 1957-04-05 | 1959-11-17 | Dow Chemical Co | Production of titanium metal |
| US3368949A (en) * | 1963-06-10 | 1968-02-13 | Bendix Corp | Process for electroforming inlaid circuits |
| US3371020A (en) * | 1964-12-14 | 1968-02-27 | Union Carbide Corp | Process for the electrodeposition of metals |
| US5215631A (en) * | 1982-06-25 | 1993-06-01 | Cel Systems Corporation | Electrolytic preparation of tin, other metals, alloys and compounds |
| US4564423A (en) * | 1984-11-28 | 1986-01-14 | General Dynamics Pomona Division | Permanent mandrel for making bumped tapes and methods of forming |
| US5647966A (en) * | 1994-10-04 | 1997-07-15 | Matsushita Electric Industrial Co., Ltd. | Method for producing a conductive pattern and method for producing a greensheet lamination body including the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100243456A1 (en) * | 2009-03-27 | 2010-09-30 | Sumitomo Electric Industries, Ltd. | Molten salt bath, method for preparing the same, and tungsten film |
| US20140353159A1 (en) * | 2013-06-04 | 2014-12-04 | The Ohio State University | Electrochemical method of lithium iron arsenic superconductor preparation |
| US20180209057A1 (en) * | 2015-07-16 | 2018-07-26 | Battelle Energy Alliance, Llc | Methods and systems for aluminum electroplating |
| US11136686B2 (en) * | 2015-07-16 | 2021-10-05 | Battelle Energy Alliance, Llc. | Methods and systems for aluminum electroplating |
| US20230159340A1 (en) * | 2020-05-06 | 2023-05-25 | The University Of Chicago | Covalent surface modification of two-dimensional metal carbides |
| US11746434B2 (en) | 2021-07-21 | 2023-09-05 | Battelle Energy Alliance, Llc | Methods of forming a metal coated article |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005015821A (en) | 2005-01-20 |
| CN1572909A (en) | 2005-02-02 |
| DE102004014402A1 (en) | 2005-01-13 |
| KR101079892B1 (en) | 2011-11-04 |
| CN100344796C (en) | 2007-10-24 |
| KR20050001320A (en) | 2005-01-06 |
| JP3901133B2 (en) | 2007-04-04 |
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