[go: up one dir, main page]

US20030137251A1 - Method and apparatus for improved plasma processing uniformity - Google Patents

Method and apparatus for improved plasma processing uniformity Download PDF

Info

Publication number
US20030137251A1
US20030137251A1 US10/359,557 US35955703A US2003137251A1 US 20030137251 A1 US20030137251 A1 US 20030137251A1 US 35955703 A US35955703 A US 35955703A US 2003137251 A1 US2003137251 A1 US 2003137251A1
Authority
US
United States
Prior art keywords
workpiece
electrode
plasma
power
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/359,557
Other languages
English (en)
Inventor
Andrej Mitrovic
Eric Strang
Murray Sirkis
Bill Quon
Richard Parsons
Yuji Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/359,557 priority Critical patent/US20030137251A1/en
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TSUKAMOTO, YUJI, QUON, BILL H., SIRKIS, MURRAY D., MITROVIC, ANDREJ S., PARSONS, RICHARD, STRANG, ERIC
Publication of US20030137251A1 publication Critical patent/US20030137251A1/en
Priority to US10/793,253 priority patent/US7164236B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

  • the present invention pertains to plasma processing of workpieces, and in particular pertains to a method and apparatus for improving the uniformity of plasma processing.
  • Ionized gas or “plasma” may be used during processing and fabrication of semiconductor devices, flat panel displays and other products requiring etching or deposition of materials.
  • Plasma may be used to etch or remove material from semiconductor integrated circuit wafers, or to sputter or deposit material onto a semiconducting, conducting or insulating surface.
  • Creating a plasma for use in manufacturing or fabrication processes typically is done by introducing a low-pressure process gas into a chamber surrounding a workpiece such as an integrated circuit (IC) wafer.
  • the atoms or molecules of the low-pressure gas in the chamber are ionized to form plasma by a radio frequency energy (power) source after the gas molecules enter the chamber.
  • the plasma then flows over and interacts with the workpiece.
  • the chamber is used to maintain the low pressures required for plasma formation, to provide a clean environment for processing the semiconductor devices and to serve as a structure for supporting one or more radio frequency energy sources.
  • Plasma may be created from a low-pressure process gas by inducing an electron flow that ionizes individual gas atoms or molecules by transfer of kinetic energy through individual electron-gas molecule collisions.
  • electrons are accelerated in an electric field such as one produced by radio frequency (RF) energy.
  • RF energy may be low frequency (below 550 KHz), high frequency (e.g., 13.56 MHz), or microwave frequency (e.g., 2.45 GHz).
  • a plasma etching system typically includes a radio frequency energy source and a pair of electrodes. A plasma is generated between the electrodes, and the workpiece (i.e., substrate or wafer) to be processed is arranged parallel to one of the electrodes. The chemical species in the plasma are determined by the source gas(es) used and the desired process to be carried out.
  • a problem that has plagued prior art plasma reactor systems is the control of the plasma to obtain uniform etching and deposition.
  • the degree of etch or deposition uniformity is determined by the design of the overall system, and in particular by the design of the RF feed transmission and the associated control circuitry.
  • the electrode is connected to a RF power supply.
  • the technological trend in plasma reactor design is to increase the fundamental RF driving frequency of the RF power supply from the traditional value of 13.56 MHz to 60 MHz or higher. Doing so improves process performance, but increases the complexity of reactor design.
  • plasma reactor system 8 comprises reactor chamber 10 having an interior 12 , within which is arranged a segmented electrode 16 having separate thick conducting electrode segments 18 each with an upper surface 18 U and a lower surface 18 L.
  • a silicon slab or “facing” may be attached to each of the lower surfaces 18 L of the segmented electrode by suitable attachment means to control contamination due to sputtering of the metal electrode.
  • Electrode segments 18 are separated by an insulator 20 and are powered by corresponding RF power supplies 26 via RF feed lines 30 connected to respective electrode segments. Power control to electrode segments 18 is provided by a main control unit 36 .
  • Match networks 40 arranged between RF power supplies 26 and electrode segments 18 are tuned to provide the best match to the load associated with a plasma 50 formed in interior region 12 , so as to optimize power transfer to the plasma.
  • Reactor system 8 includes a workpiece support member 60 opposite segmented electrode 16 , upon which a workpiece 66 , such as a wafer, is supported.
  • the design of segmented electrode 16 is such that lower surfaces 18 L of electrode segments 18 interfaces with a vacuum region 70 in interior region 12 . This puts electrode segments 18 directly in contact with plasma 50 formed in vacuum region 70 , although if silicon facings as mentioned above (not shown) are used, the surfaces of the silicon electrode facings will be directly in contact with plasma 50 .
  • Numerous seals (not shown) are required between insulators 20 and the electrode segments, and between the chamber 10 and insulators 20 , to isolate vacuum region 70 .
  • one technological trend in plasma reactor design is to increase the fundamental RF frequency from the traditional value of 13.454 MHz to 60 MHz or higher, as mentioned above. Doing so improves process performance, but increases the complexity of reactor design.
  • a second trend in reactor design is to have multiple electrodes, i.e., electrode segments, such as those discussed above in connection with FIG. 1.
  • multiple electrodes combined with increased operating frequencies mean that delivering the correct amount of RF power becomes more complicated because of capacitive coupling between the electrode segments and greater sensitivity to parasitic capacitive and inductive elements. This effect is exacerbated by the shorter wavelengths of higher fundamental frequencies. The result is increased difficulty in reducing process non-uniformity.
  • the present invention pertains to plasma processing of workpieces, and in particular pertains to a method and apparatus for improving the uniformity of the plasma processing.
  • the present invention is a method of and apparatus for generating and controlling a plasma formed in a capacitively coupled plasma system having a plasma electrode and a bias electrode, wherein the plasma electrode has multiple regions defined by RF power feed lines, with the size of each region being dependent on the amount of RF power delivered thereto.
  • the electrode regions can also be defined as electrode segments separated by insulators.
  • the RF power to each electrode region is independently controlled.
  • the amplitude, phase, frequency, and/or “on-time” during which the RF power is applied to each RF feed line of the electrode can be varied, thereby affecting the spatial distribution of the plasma-exciting electric field and the plasma density (i.e., ion density) of the plasma.
  • a first aspect of the invention is an electrode apparatus for use in plasma processing.
  • the apparatus comprises a unitary electrode having an upper surface and a lower surface.
  • a unitary electrode is an electrode, usually planar, for which the entire electrode comprises either a single conductor or a plurality of conductors that are interconnected by means of low resistance ohmic contacts.
  • a silicon facing; i.e., a so-called silicon electrode, can be attached by various attachment means to the lower surface of the unitary electrode in accordance with common practice.
  • An RF multiplexer is electrically connected to a plurality of locations on the electrode upper surface via a corresponding plurality of RF feed lines.
  • the unitary electrode has a plurality of electrode regions corresponding to the plurality of RF feed lines.
  • the apparatus can preferably include a plurality of match networks arranged one in each RF feed line in said plurality of RF feed lines.
  • the apparatus can also preferably include a control system electrically connected to the RF multiplexer, for controlling the operation of said RF multiplexer when performing RF multiplexing.
  • a second aspect of the present invention is a plasma reactor system for processing a workpiece in a manner that achieves a high degree of process uniformity.
  • the system comprises a plasma chamber having sidewalls, an upper surface and a lower surface defining an interior region capable of supporting plasma.
  • a unitary electrode having an upper surface is arranged within the interior region adjacent the upper wall.
  • a RF multiplexer is electrically connected to a plurality of locations on the upper surface of the unitary electrode via a corresponding plurality of RF feed lines.
  • the electrode includes a plurality of electrode regions corresponding to the plurality of RF feed lines.
  • a workpiece support member for supporting the workpiece.
  • the method is carried out in a plasma reactor chamber having an electrode with an upper surface as part of a plasma reactor system.
  • n is the number of RF feed lines connected to the electrode upper surface at locations L i
  • ⁇ i is the on-time of the RF power for the i th RF feed line
  • ⁇ i is the phase of the i th RF feed line relative to a selected one of the other RF feed lines
  • P i is the RF power delivered to the electrode at location L i through the i th RF feed line
  • S is the sequencing of RF power to the electrode through the RF feed lines.
  • the second step includes the steps of forming a first plasma within the reactor chamber having characteristics corresponding to the initial process parameters and processing a first workpiece for a predetermined process time, measuring the workpiece process uniformity, and comparing the workpiece process uniformity to a predetermined standard.
  • the workpiece process non-uniformity is greater than the predetermined standard, then at least one of the process parameters is changed and the above-steps repeated (using either the first workpiece or a different workpiece) until the workpiece process non-uniformity is less than the predetermined standard.
  • a fourth aspect of the invention involves processing a workpiece using the optimized process parameters deduced as described above in connection with the third aspect of the invention.
  • a fifth aspect of the invention is the method of the first aspect of the invention, but carried out to achieve a desired degree of process uniformity. Such a method might be performed where there is a need to purposely provide a certain amount of process non-uniformity to counter other process effects.
  • FIG. 1 is a schematic cross-sectional diagram of a prior art plasma reactor system having a segmented electrode comprising a plurality of electrode segments with corresponding RF power supplies connected thereto;
  • FIG. 2A is a schematic cross-sectional diagram of the plasma reactor system of the present invention having a unitary electrode with multiple RF feed lines connected at one end to various locations on the unitary electrode upper surface, and connected at the opposite ends to a RF power multiplexer;
  • FIG. 2B is a block diagram of an embodiment of one component of the system of FIG. 2A;
  • FIG. 3 is a flow diagram of the method according to the present invention of optimizing the process parameters of the plasma reactor system of FIG. 2;
  • FIG. 4A is a schematic diagram of a first alternate embodiment for the RF power sources and electrode of the present invention, wherein multiple RF power supplies feed power through multiple match networks to electrode segments of a multi-segment electrode;
  • FIG. 4B is a schematic diagram of a second alternate embodiment for the RF power sources and electrode of the present invention, wherein a single RF power supply feeds power through a match network and a multiplexer distributing power to electrode segments in a multi-segment electrode;
  • FIG. 4C is a schematic diagram of the first alternate embodiment for the RF power sources and electrode of the present invention, wherein multiple RF power supplies feed power through multiple match networks to a unitary electrode;
  • FIG. 4D is a schematic diagram of the second alternate embodiment for the RF power sources and electrode of the present invention, wherein a single RF power supply feeds power through a match network and a multiplexer distributing power to electrode regions R i of a unitary electrode.
  • the present invention pertains to plasma processing of workpieces, and in particular pertains to a method and apparatus for improving the uniformity of the plasma processing.
  • plasma reactor system 100 comprises reactor chamber 102 with sidewalls 104 , an upper wall 108 and a lower wall 112 defining an interior region 120 capable of supporting plasma 130 .
  • a unitary electrode 140 Arranged within interior region 120 near upper wall 108 is a unitary electrode 140 having an upper surface 140 U and a lower surface 140 L and a periphery 144 .
  • Electrode 140 is referred to as the “plasma electrode”.
  • Insulators 146 are arranged between electrode periphery 144 and sidewalls 104 to electrically isolate electrode 140 from chamber 102 .
  • System 100 further includes a RF power multiplexer 150 .
  • a RF power supply 152 is included in RF multiplexer 150 .
  • an external RF power supply (as illustrated by RF power supply 154 ) is provided.
  • FIG. 2B shows an exemplary layout of a multiplexer 150 acting to distribute RF power from a single RF generator 154 sequentially to a plurality of electrodes or electrode regions. Although only two electrodes are illustrated for the sake of simplicity, it will be understood that any number of electrodes can be supplied.
  • a central computer, or controller, 230 communicates with RF power generator 154 , multiplexer 150 and one or more match networks 160 .
  • Multiplexer 150 is composed of an isolator and a coax switch.
  • the isolator can be a commercially available product of the type distributed by HD Communications Corporation (1 Comac Loop, Ronkonkoma, N.Y. 11779) who specializes in RF, microwave, fiber optic and wireless communications products.
  • the coax switch can be a commercially available product distributed by Texas Towers, in particular the Ameritron RCS-8V.
  • the specifications for the Ameritron RCS-8V are as follows: a frequency range of 0.5 to 450 MHz, power handling of 5000 W at 30 MHz, power handling of 1000 W at 150 MHz, ⁇ 0.05 dB insertion loss and 50 ⁇ impedance.
  • Generator 154 , match networks 160 and the coax switch of multiplexer 150 are all connected to be controlled by computer 230 to distribute power to the various electrodes in any desired pattern.
  • RF power multiplexer 150 is a device that directs RF power to one or more of the RF feed lines 156 at a given time.
  • the locations L i of RF feed lines 156 define corresponding electrode regions R i (e.g., R 1 , R 2 , . . . .
  • R n to which RF power is provided.
  • the sizes of regions R i depend on the amount of RF power P i provided, relative to the amount of power provided to adjacent regions but typically each of these regions extends over an area of the order of the total electrode area divided by n.
  • process rate etch or deposition rate
  • System 100 also preferably includes match networks 160 arranged in RF feed lines 156 between RF multiplexer 150 and electrode 140 .
  • Match networks 160 are tuned to provide the best match to the load presented by plasma 130 formed within interior region 120 so as to optimize power transfer to the plasma.
  • Reactor system 100 further includes a workpiece support member 170 arranged adjacent lower wall 112 opposite segmented electrode 140 , capable of supporting a workpiece 176 , such as a wafer, to be processed (e.g., etched or coated) by means of plasma 130 .
  • a workpiece 176 such as a wafer
  • System 100 also includes a workpiece handling system 180 in operative communication with plasma chamber 102 (see dashed line 182 ), for placing workpieces 176 onto and removing workpieces 176 from workpiece support member 170 .
  • a gas supply system 190 in pneumatic communication with chamber 102 via a gas supply line 194 for supplying gas to chamber interior 120 to purge the chamber and to create plasma 130 .
  • the particular gases included in gas supply system 190 depend on the application. However, for plasma etching applications, gas supply system 190 preferably includes such gases as chlorine, hydrogen-bromide, octafluorocyclobutane, and various other fluorocarbon compounds, etc.
  • gas supply system 190 preferably includes silane, ammonia, tungsten-tetrachloride, titanium-tetrachloride, and the like.
  • a vacuum system 200 in pneumatic communication with chamber 102 via a vacuum line 204 .
  • a workpiece support power supply 210 electrically connected to workpiece support member 170 , for electrically biasing the workpiece support member. This electrical connection allows workpiece support member 170 to serve as a lower electrode, also referred to as the “bias electrode”.
  • System 100 also includes a main control system 230 , which is in electronic communication with and controls and coordinates the operation of workpiece handling system 180 , gas supply system 190 , vacuum system 200 , workpiece support power supply 210 , and RF power multiplexer 150 through electrical signals.
  • Main control system 230 thus controls the operation of system 100 and the plasma processing of workpieces 176 in the system, as described below.
  • main control system 230 is a computer with a memory unit MU having both random-access memory (RAM) and read-only memory (ROM), a central processing unit CPU with a microprocessor (e.g., a PENTIUMTM processor from Intel Corporation), and a hard disk HD, all electrically connected.
  • Hard disk HD serves as a secondary computer-readable storage medium, and may be, for example, a hard disk drive for storing information corresponding to instructions for control system 230 to carry out the present invention, as described below.
  • Control system 230 also preferably includes a disk drive DD, electrically connected to hard disk HD, memory unit MU and central processing unit CPU, wherein the disk drive is capable of accepting and reading (and even writing to) a computer-readable medium CRM, such as a floppy disk or compact disk (CD), on which is stored information corresponding to instructions for control system 230 to carry out the present invention. It is also preferable that control system 230 has data acquisition and control capability.
  • a suitable control system 230 is a computer, such as a DELL PRECISION WORKSTATION 610 TM, available from Dell Corporation, Dallas, Tex.
  • System 100 also includes a database 240 electrically connected to (or alternatively, integral to) control system 230 for storing data pertaining to the plasma processing of workpiece 176 , and for also including predetermined sets of instructions (e.g., computer software) for operating system 100 via control system 230 to process the workpieces.
  • a database 240 electrically connected to (or alternatively, integral to) control system 230 for storing data pertaining to the plasma processing of workpiece 176 , and for also including predetermined sets of instructions (e.g., computer software) for operating system 100 via control system 230 to process the workpieces.
  • system 100 involves setting numerous process-related parameters that can be modified in optimizing RF power delivery to electrode 140 in a manner that allows the etch or deposition rate to be controlled to obtain a high degree of etch or deposition uniformity (i.e., non-uniformity less than 5%).
  • An additional parameter which is typically fixed but in certain cases can be varied, is the location L i (L 1 , L 2 , . . .
  • the optimum parameter set A* can be achieved empirically using the method comprising the following steps.
  • the first step 301 is setting the parameters n, ⁇ i , ⁇ i , P i , S, and L i to initial values.
  • L i is typically fixed, but could be varied if the need arises, i.e., if varying the other process parameters does not result in an acceptable process uniformity.
  • the second step 302 is forming plasma 130 within interior region 120 based on the initial parameter values set in step 301 and processing workpiece 176 with the plasma.
  • Plasma 130 will have time-varying characteristics (e.g., plasma density, energy, etc.) corresponding to the initial values of the process parameters.
  • the plasma characteristics i.e. plasma density, energy, etc.
  • the plasma characteristics will vary in time in that, in particular, their spatial distributions will vary in time throughout the process run due to the RF power and/or other process parameter sequencing through the process run. For instance, a first electrode or electrode region is initially powered for a short time and corresponding to this condition there is a particular spatial distribution of the plasma properties. This short period of time is followed by a second short period of time during which a second electrode or electrode region is powered with a different corresponding distribution of plasma properties. Each of these short steps adds to form the entire process run.
  • second step 302 workpiece 176 is processed with plasma 130 for a process time T P .
  • RF multiplexer 150 under the direction of controller 230 , delivers an amount of RF power Pi to each of the n RF feed lines 156 i for an “on-time”, ⁇ i ⁇ P .
  • This process is referred to herein as “RF power multiplexing.”
  • the sequencing S and phasing ⁇ i of the n RF feed lines is also varied.
  • the sequencing S can be such that only one location L i at a time is powered, or multiple locations L i at one time are powered.
  • the etch or deposition distribution for the entire process time ⁇ P can be considered as a linear superposition or a non-linear combination of the etch distributions achieved by applying RF power P i to each RF feed line 156 based on the initial set of process parameters A.
  • the various parameters, such as the on-time ⁇ i can be different or the same for each RF feed line 156 i .
  • the amount of RF power P i delivered can the same for all RF feed lines 156 i as well.
  • the next step 303 is measuring the workpiece etch or deposition (i.e., process) uniformity. This is preferably accomplished using well-known optical interferometric techniques.
  • the workpiece uniformity measurement is based on the greatest etch depth/deposition thickness minus the smallest etch depth/deposition thickness divided by two times the mean etch depth/deposition thickness of a large number of sites on the workpiece surface. For a wafer with a diameter of about 20 centimeters, a reasonable number of measurement sites is approximately 50 to 100. This results in a quantitative workpiece uniformity value M U .
  • the next step 304 is assessing whether or not the workpiece uniformity measurement M U is acceptable, i.e., less than a certain predetermined standard (e.g., threshold) T U . It can be the case that a certain degree of non-uniformity is sought to counter other processing effects, such as thin-film thickness variations across the surface of the workpiece. Such variations can be accounted for by measuring the spatial variation in uniformity as a function M U (x,y) and comparing it to a predetermined standard represented by a spatially dependent function T(x,y) that corresponds to the non-uniformity profile sought.
  • a spatially dependent function T(x,y) that corresponds to the non-uniformity profile sought.
  • one or more of the process parameters in set A can be changed with the assistance of a computer program or algorithm that models the plasma etch or deposition process.
  • PR(x,y) is the overall process rate
  • PR i (x,y) is the process rate for each electrode region R i
  • T P is the total process time (i.e., the sum of the ⁇ i )
  • W i is a weighting coefficient.
  • the summation is performed by summing from 1 to n.
  • the weighting coefficient W i is a function of at least one of the above-defined process parameters. For a linear optimization, W i will typically be in the range of 0.9 to 1.1.
  • the weighting coefficients W i may be determined empirically based on the measurements made in step 303 by varying one or more of the parameter values to arrive at the required weighting coefficients W i .
  • n is the number of RF feed lines 156 i chosen to be activated. This number can be less than the total number of feed lines connected to upper surface 140 U of electrode 140 because optimization of the process parameters can require that a certain group of the n RF feed lines not be activated.
  • Steps 302 to 305 are repeated until the measured workpiece uniformity M U is acceptable, thereby defining the optimum process parameter set A*.
  • the optimum process parameter set A* is defined and recorded in database 240 and/or in control system 230 in memory unit MU.
  • a workpiece 176 such as a semiconductor wafer, is provided by placing the workpiece onto workpiece support member 170 via workpiece handling system 180 .
  • main control system 230 controls the formation of an “optimized” version of plasma 130 and controls the processing of workpiece 176 provided in step 307 according to the optimum set of process parameters A* established in step 306 and recorded in database 240 and/or control system 230 .
  • Step 308 is carried out for one or more workpieces 176 . If workpiece 176 needs to be processed with a new plasma process step requiring plasma different from a particular form of plasma 130 , then the steps of flow diagram 300 are repeated for the new plasma process.
  • n can be five, but might also range between two and ten.
  • a typical process time requires on the order of 60 seconds. If only one RF feed is excited at any given time, then if four sequences S occur with five RF feeds, each sequence S will last for 15 sec. If all of the ⁇ i are equal, each ⁇ i will be three seconds. If the ⁇ i are too short, the demands on the RF matching network(s) can be too great; i.e., steady-state conditions may not be attained during the time ⁇ i .
  • one RF feed can be located on the axis of symmetry, with the other four located ninety degrees apart centered on a circle with a diameter approximately equal to 2 ⁇ 3 the wafer diameter.
  • the parameter ⁇ i is meaningful only if two or more RF feeds are powered simultaneously.
  • the value for P i can be nearly equal, but need not be so.
  • the value for Pi should be about the same as the power that would be delivered via a single feed to a conventional electrode.
  • the present invention is a method and apparatus for delivering power at different locations to a unitary electrode.
  • the process parameter optimization and operation method described above can also be applied to a number of alternate structural embodiments as shown in FIGS. 4 A-D, below, including a multi-segment electrode having a plurality of electrode segments.
  • multiple RF power supplies 400 feed power through corresponding multiple RF feed lines 406 and multiple match networks 410 to corresponding electrode segments 420 in a multi-segment electrode. Electrode segments 420 are separated by insulators 426 . In this first alternative embodiment, the number of power supplies, match networks, and electrode segments can be two or greater.
  • a control system 440 similar if not identical to control system 230 is programmed to control the operation of RF power supplies 400 so that they are multiplexed in a manner that replicates the RF power multiplexing operation of RF multiplexer 150 of apparatus 100 .
  • a single RF power supply 400 feeds power through a single match network 410 and a multiplexer 450 distributes power to electrode segments 420 of the multi-segment electrode via multiple RF feed lines 460 .
  • the number of electrode segments 420 can be two or greater.
  • control system 440 similar if not identical to control system 230 , controls the operation of multiplexer 450 during the operation of system 100 .
  • match network 410 may need to be to programmed to adjust itself each time multiplexer 450 switches.
  • multiple RF power supplies 400 feed power through multiple match networks 410 to a unitary electrode 140 , and control system 440 , similar if not identical to control system 230 , is programmed to control the operation of RF power supplies 400 so that they are multiplexed in a manner that replicates the RF power multiplexing operation of RF multiplexer 150 of apparatus 100 .
  • FIG. 4D there is shown a system essentially the same as that described above in connection with system 100 , except that a single adjustable match network 410 is used instead of a plurality of match networks.
  • a single RF power supply 400 feeds power through match network 410 and a multiplexer 450 that distributes power to electrode regions R i of a unitary electrode.
  • FIGS. 4A and 4B are extended to the use coil antennas wherein an electrode 420 can be a RF antenna.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
US10/359,557 2000-08-08 2003-02-07 Method and apparatus for improved plasma processing uniformity Abandoned US20030137251A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/359,557 US20030137251A1 (en) 2000-08-08 2003-02-07 Method and apparatus for improved plasma processing uniformity
US10/793,253 US7164236B2 (en) 2000-08-08 2004-03-05 Method and apparatus for improved plasma processing uniformity

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22383400P 2000-08-08 2000-08-08
PCT/US2001/024491 WO2002013225A2 (fr) 2000-08-08 2001-08-06 Procede et appareil d'amelioration de l'uniformite du traitement au plasma
US10/359,557 US20030137251A1 (en) 2000-08-08 2003-02-07 Method and apparatus for improved plasma processing uniformity

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/024491 Continuation WO2002013225A2 (fr) 2000-08-08 2001-08-06 Procede et appareil d'amelioration de l'uniformite du traitement au plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/793,253 Division US7164236B2 (en) 2000-08-08 2004-03-05 Method and apparatus for improved plasma processing uniformity

Publications (1)

Publication Number Publication Date
US20030137251A1 true US20030137251A1 (en) 2003-07-24

Family

ID=22838144

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/359,557 Abandoned US20030137251A1 (en) 2000-08-08 2003-02-07 Method and apparatus for improved plasma processing uniformity
US10/793,253 Expired - Lifetime US7164236B2 (en) 2000-08-08 2004-03-05 Method and apparatus for improved plasma processing uniformity

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/793,253 Expired - Lifetime US7164236B2 (en) 2000-08-08 2004-03-05 Method and apparatus for improved plasma processing uniformity

Country Status (4)

Country Link
US (2) US20030137251A1 (fr)
AU (1) AU2001279189A1 (fr)
TW (1) TW511397B (fr)
WO (1) WO2002013225A2 (fr)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040210407A1 (en) * 2002-12-31 2004-10-21 Tokyo Electron Limited Non-linear test load and method of calibrating a plasma system
US20050130620A1 (en) * 2003-12-16 2005-06-16 Andreas Fischer Segmented radio frequency electrode apparatus and method for uniformity control
EP2053630A3 (fr) * 2007-10-22 2010-09-01 New Power Plasma Co., Ltd. Réacteur à plasma à couplage capacitif
EP2239760A1 (fr) 2009-03-19 2010-10-13 Forschungs- und Applikationslabor Plasmatechnik GmbH Dresden Dispositif et procédé de modification superficielle protégée par plasma de substrats sous vide
EP2232958A4 (fr) * 2007-12-25 2011-01-19 Applied Materials Inc Excitation rf asymétrique pour électrode de chambre à plasma
US20120055915A1 (en) * 2010-09-08 2012-03-08 Hitachi High-Technologies Corporation Heat treatment apparatus
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
WO2013078368A3 (fr) * 2011-11-22 2016-05-19 Lam Research Corporation Systèmes et méthodes de contrôle d'une région de bord de plasma
US9396900B2 (en) 2011-11-16 2016-07-19 Tokyo Electron Limited Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
WO2017189222A1 (fr) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Réacteur à plasma à électrodes divisées
US20180019102A1 (en) * 2016-07-14 2018-01-18 Tokyo Electron Limited Method for rf power distribution in a multi-zone electrode array
US20180174800A1 (en) * 2016-12-15 2018-06-21 Toyota Jidosha Kabushiki Kaisha Plasma device
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US11315767B2 (en) 2017-09-25 2022-04-26 Toyota Jidosha Kabushiki Kaisha Plasma processing apparatus
US11594400B2 (en) * 2011-11-23 2023-02-28 Lam Research Corporation Multi zone gas injection upper electrode system
US11776790B2 (en) * 2018-12-18 2023-10-03 Krones Ag Apparatus and method for coating and in particular plasma coating of containers

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
IES20050301A2 (en) 2005-05-11 2006-11-15 Univ Dublin City Plasma source
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
US7341954B2 (en) * 2005-08-24 2008-03-11 Tokyo Electron Limited Method and apparatus for determining an operation status of a plasma processing apparatus, program and storage medium storing same
US7777599B2 (en) 2007-11-02 2010-08-17 Applied Materials, Inc. Methods and apparatus for controlling characteristics of a plasma
CN101933402B (zh) * 2008-01-31 2013-03-27 应用材料公司 用于等离子体腔室的电极的多相射频电源
US20100123502A1 (en) * 2008-07-09 2010-05-20 Bhutta Imran A System for providing a substantially uniform potential profile
US20100015357A1 (en) * 2008-07-18 2010-01-21 Hiroji Hanawa Capacitively coupled plasma etch chamber with multiple rf feeds
US8438990B2 (en) * 2008-09-30 2013-05-14 Applied Materials, Inc. Multi-electrode PECVD source
KR101627297B1 (ko) * 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
WO2012164050A1 (fr) 2011-05-31 2012-12-06 Surcoatec Ag Dispositif et procédé de dépôt et/ou d'enlèvement d'un matériau au moyen d'un dépôt chimique en phase vapeur assisté par plasma/d'une gravure chimique sèche
US20140299273A1 (en) * 2013-04-08 2014-10-09 Lam Research Corporation Multi-segment electrode assembly and methods therefor
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
KR20170075887A (ko) * 2015-12-23 2017-07-04 삼성전자주식회사 플라즈마 처리 장치, 그의 플라즈마 처리 방법, 및 플라즈마 식각 방법
US9721759B1 (en) * 2016-04-04 2017-08-01 Aixtron Se System and method for distributing RF power to a plasma source
JP7072572B2 (ja) * 2016-12-27 2022-05-20 エヴァテック・アーゲー Ｒｆ容量結合二重周波数エッチング反応器
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11538662B2 (en) 2019-05-21 2022-12-27 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US5540781A (en) * 1993-03-23 1996-07-30 Canon Kabushiki Kaisha Plasma CVD process using a very-high-frequency and plasma CVD apparatus
US5693238A (en) * 1993-05-03 1997-12-02 Balzers Aktiengesellschaft Method for improving the rate of a plasma enhanced vacuum treatment
US5783102A (en) * 1996-02-05 1998-07-21 International Business Machines Corporation Negative ion deductive source for etching high aspect ratio structures
US6024827A (en) * 1993-10-04 2000-02-15 Tokyo Electron Limited Plasma processing apparatus
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US6050217A (en) * 1997-08-26 2000-04-18 Murata Manufacturing Co., Ltd. Parallel plate plasma CVD apparatus
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6363881B2 (en) * 1998-04-28 2002-04-02 Mitsubishi Heavy Industries, Ltd. Plasma chemical vapor deposition apparatus
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366553A (en) * 1985-11-07 1994-11-22 Burford Corporation Sequence controller
US4827219A (en) * 1988-01-07 1989-05-02 The Regents Of The University Of California Remotely adjustable MRI RF coil impedance matching circuit with mutualy coupled resonators
DE3923661A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5128602A (en) * 1991-04-26 1992-07-07 Metcal, Inc. Parallel supply for multiple loads from a single power supply
US6514376B1 (en) * 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
JPH08236294A (ja) * 1995-02-28 1996-09-13 Jeol Ltd 高周波プラズマ応用装置
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5770922A (en) * 1996-07-22 1998-06-23 Eni Technologies, Inc. Baseband V-I probe
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US5889252A (en) * 1996-12-19 1999-03-30 Lam Research Corporation Method of and apparatus for independently controlling electric parameters of an impedance matching network
US6905578B1 (en) * 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
AU725612B2 (en) * 1998-05-29 2000-10-12 Mitsubishi Heavy Industries, Ltd. Plasma CVD apparatus

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US5540781A (en) * 1993-03-23 1996-07-30 Canon Kabushiki Kaisha Plasma CVD process using a very-high-frequency and plasma CVD apparatus
US5693238A (en) * 1993-05-03 1997-12-02 Balzers Aktiengesellschaft Method for improving the rate of a plasma enhanced vacuum treatment
US6024827A (en) * 1993-10-04 2000-02-15 Tokyo Electron Limited Plasma processing apparatus
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5783102A (en) * 1996-02-05 1998-07-21 International Business Machines Corporation Negative ion deductive source for etching high aspect ratio structures
US6050217A (en) * 1997-08-26 2000-04-18 Murata Manufacturing Co., Ltd. Parallel plate plasma CVD apparatus
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6363881B2 (en) * 1998-04-28 2002-04-02 Mitsubishi Heavy Industries, Ltd. Plasma chemical vapor deposition apparatus
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7216067B2 (en) * 2002-12-31 2007-05-08 Tokyo Electron Limited Non-linear test load and method of calibrating a plasma system
US20040210407A1 (en) * 2002-12-31 2004-10-21 Tokyo Electron Limited Non-linear test load and method of calibrating a plasma system
US20050130620A1 (en) * 2003-12-16 2005-06-16 Andreas Fischer Segmented radio frequency electrode apparatus and method for uniformity control
US20070235412A1 (en) * 2003-12-16 2007-10-11 Lam Research Corporation Segmented radio frequency electrode apparatus and method for uniformity control
EP2053630A3 (fr) * 2007-10-22 2010-09-01 New Power Plasma Co., Ltd. Réacteur à plasma à couplage capacitif
EP2232958A4 (fr) * 2007-12-25 2011-01-19 Applied Materials Inc Excitation rf asymétrique pour électrode de chambre à plasma
EP2239760A1 (fr) 2009-03-19 2010-10-13 Forschungs- und Applikationslabor Plasmatechnik GmbH Dresden Dispositif et procédé de modification superficielle protégée par plasma de substrats sous vide
DE102009015178B4 (de) * 2009-03-19 2012-09-06 Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden Vorrichtung und Verfahren für die plasmagestützte Oberflächenmodifizierung von Substraten im Vakuum
US20120055915A1 (en) * 2010-09-08 2012-03-08 Hitachi High-Technologies Corporation Heat treatment apparatus
US9271341B2 (en) * 2010-09-08 2016-02-23 Hitachi High-Technologies Corporation Heat treatment apparatus that performs defect repair annealing
US9396900B2 (en) 2011-11-16 2016-07-19 Tokyo Electron Limited Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
WO2013078368A3 (fr) * 2011-11-22 2016-05-19 Lam Research Corporation Systèmes et méthodes de contrôle d'une région de bord de plasma
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US11127571B2 (en) 2011-11-22 2021-09-21 Lam Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US10622195B2 (en) 2011-11-22 2020-04-14 Lam Research Corporation Multi zone gas injection upper electrode system
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US11594400B2 (en) * 2011-11-23 2023-02-28 Lam Research Corporation Multi zone gas injection upper electrode system
WO2017189222A1 (fr) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Réacteur à plasma à électrodes divisées
TWI680491B (zh) * 2016-07-14 2019-12-21 日商東京威力科創股份有限公司 電漿處理系統與方法
KR20190019205A (ko) * 2016-07-14 2019-02-26 도쿄엘렉트론가부시키가이샤 다중 구역 전극 어레이에서의 rf 전력 분배 방법
US10777385B2 (en) * 2016-07-14 2020-09-15 Tokyo Electron Limited Method for RF power distribution in a multi-zone electrode array
KR102162949B1 (ko) 2016-07-14 2020-10-07 도쿄엘렉트론가부시키가이샤 다중 구역 전극 어레이에서의 rf 전력 분배 방법
WO2018013681A1 (fr) * 2016-07-14 2018-01-18 Tokyo Electron Limited Procédé de distribution d'énergie rf dans un réseau d'électrodes multizones
US20180019102A1 (en) * 2016-07-14 2018-01-18 Tokyo Electron Limited Method for rf power distribution in a multi-zone electrode array
US20180174800A1 (en) * 2016-12-15 2018-06-21 Toyota Jidosha Kabushiki Kaisha Plasma device
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
US11315767B2 (en) 2017-09-25 2022-04-26 Toyota Jidosha Kabushiki Kaisha Plasma processing apparatus
US11776790B2 (en) * 2018-12-18 2023-10-03 Krones Ag Apparatus and method for coating and in particular plasma coating of containers

Also Published As

Publication number Publication date
TW511397B (en) 2002-11-21
US7164236B2 (en) 2007-01-16
AU2001279189A1 (en) 2002-02-18
US20040168770A1 (en) 2004-09-02
WO2002013225A2 (fr) 2002-02-14
WO2002013225A3 (fr) 2002-08-01

Similar Documents

Publication Publication Date Title
US7164236B2 (en) Method and apparatus for improved plasma processing uniformity
US20030201069A1 (en) Tunable focus ring for plasma processing
US6884635B2 (en) Control of power delivered to a multiple segment inject electrode
JP4852189B2 (ja) プラズマ処理装置及びプラズマ処理方法
US6232236B1 (en) Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
EP1686611B9 (fr) Réacteur et methode plasma à confinement de plasma élevé et à haute conductibilité de gaz
US6916401B2 (en) Adjustable segmented electrode apparatus and method
EP1057205B1 (fr) Reacteur de depot chimique en phase vapeur active par plasma, a alimentation hf, et procedes d'execution d'un tel depot
US20040011466A1 (en) Plasma processing apparatus
JPH09120956A (ja) 物質処理用容量結合式二重周波数プラズマリアクタ
JPH09115893A (ja) プログラミングされた反応物ガスの散布を有するプラズマリアクタ
US20040037971A1 (en) Plasma processing apparatus and processing method
US20030094238A1 (en) Plasma processing apparatus for spatial control of dissociation and ionization
WO2022081535A1 (fr) Systèmes de commande de profils de distribution de densité de plasma comprenant des supports de substrat à zones rf multiples
US6204604B1 (en) Method and apparatus for controlling electrostatic coupling to plasmas
US8017526B2 (en) Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process
US5998931A (en) Method and apparatus for controlling electrostatic coupling to plasmas
US20230126058A1 (en) Dielectric window for substrate processing chamber
KR100878467B1 (ko) 반도체 기판 처리장치
JP3927464B2 (ja) プラズマ処理方法
KR102077512B1 (ko) 멀티 채널 rf 전원 공급장치
JP2003059841A (ja) プラズマ処理装置およびプラズマ処理方法
KR20210025223A (ko) 기판 처리 장치 및 기판 처리 방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: TOKYO ELECTRON LIMITED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MITROVIC, ANDREJ S.;SIRKIS, MURRAY D.;PARSONS, RICHARD;AND OTHERS;REEL/FRAME:013909/0239;SIGNING DATES FROM 20030124 TO 20030207

STCB Information on status: application discontinuation

Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION