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US20020022346A1 - Gettering regions and methods of forming gettering regions within a semiconductor wafer - Google Patents

Gettering regions and methods of forming gettering regions within a semiconductor wafer Download PDF

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US20020022346A1
US20020022346A1 US09/544,342 US54434200A US2002022346A1 US 20020022346 A1 US20020022346 A1 US 20020022346A1 US 54434200 A US54434200 A US 54434200A US 2002022346 A1 US2002022346 A1 US 2002022346A1
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region
type
gettering
phosphorus
conductivity enhancing
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US6391746B1 (en
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Fernando Gonzalez
Jeffrey Honeycutt
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Definitions

  • This invention relates generally to methods of forming gettering regions within silicon semiconductor wafers and to gettering regions formed by such methods.
  • Impurity contamination of Si semiconductor wafers is a problem within the semiconductor industry. Of particular concern are metallic contaminants, such as iron, nickel and copper. When such impurities are present in a Si semiconductor device, the impurities degrade the characteristics and reliability of the device. As integration in semiconductor devices becomes increasingly dense, the tolerance for metallic contaminants becomes increasingly stringent.
  • a 8 semiconductor wafer 10 comprises a front-side surface 12 and a backside surface 14 .
  • Front-side surface 12 is defined as a surface where device formation will ultimately occur.
  • a damage region 16 is formed beneath front-side surface 12 and is placed deep enough within the substrate that later devices formed on front-side surface 12 are isolated from the damage region 16 .
  • Damage region 16 is typically formed by introducing impurities into the lattice of the semiconductor material of wafer 10 .
  • damage region 16 is a layer within the middle of substrate 10
  • damage region 16 is a layer along back-side 14 of wafer 10 . After damage region 16 is formed, wafer 10 is heated to drive metallic contaminants into the damage region.
  • a problem of increasing concern as semiconductor devices become increasingly smaller is substrate-background current, or diffusion current.
  • diffusion current is function of device temperature and increases exponentially with temperature.
  • the diffusion current generally also increases.
  • more diffusion current will generally form from a defect region of a semiconductor wafer than from a region without defects.
  • damage regions 16 tend to generate more diffusion current at a given temperature than do other regions of a semiconductor wafer 10 .
  • the diffusion current electrons formed in damage region 16 will generally drift away from damage region 16 , potentially toward front-side surface 12 . Such electrons at front-side surface 12 may degrade the performance of devices that are later formed on surface 12 .
  • FIG. 1 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment containing a gettering region of a type known in the prior art.
  • FIG. 2 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment containing a gettering region of a type known in the prior art.
  • FIG. 3 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment shown at a processing step in accordance with the invention.
  • FIG. 4 is a view of the FIG. 3 fragment shown at a processing step subsequent to that shown in FIG. 3.
  • FIG. 5 is a view of the FIG. 3 wafer shown at a step subsequent to that of FIG. 4.
  • FIG. 6 is a view of the FIG. 3 wafer shown at a step subsequent to that of FIG. 5.
  • FIG. 7 is an expanded view of area 7 of FIG. 6 showing one embodiment of the invention.
  • FIG. 8 is an expanded view of area 7 of FIG. 6 showing an embodiment of the invention different from the embodiment shown in FIG. 7.
  • the invention is a method of forming a gettering region within an Si semiconductor wafer comprising the following steps:
  • the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type;
  • the invention is a method of forming a gettering region within an Si semiconductor wafer comprising the following steps:
  • the invention is a gettering diode within an Si semiconductor material wafer comprising:
  • a background region within the semiconductor material wafer comprising a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type;
  • a second-type conductivity implant region entirely contained within the background region, the second-type implant region comprising a second-type conductivity enhancing dopant, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant;
  • a metals gettering damage region entirely contained within the second-type implant region in the semiconductor material, the first-type background region and the second-type implant region together forming a gettering diode which surrounds the damage region.
  • the invention relates to methods of forming gettering regions within silicon semiconductor wafers and of forming gettering diodes which may collect positive or negative charges, as either electrons or holes, depending on the polarity of the collector.
  • the invention is further described with reference to FIGS. 3 - 5 .
  • a wafer 10 of semiconductor material preferably silicon
  • Wafer 10 preferably comprises a background region 18 which is conductively doped with a first-type conductivity enhancing dopant (not shown).
  • the first-type conductivity enhancing dopant is either n-type or p-type, so that background region 18 is either an n-type or p-type region.
  • Wafer 10 further comprises contaminants 20 , which may include metallic contaminants, such as metallic contaminants selected from the group consisting of iron, nickel and copper.
  • a second-type conductivity enhancing dopant 22 is implanted into background region 18 to form second-type implant region 24 entirely contained within background region 18 .
  • Second-type dopant 22 is of an opposite type than the first-type dopant. Thus, if background region 18 is n-type, implant region 24 is p-type, and vice versa.
  • dopant 22 preferably comprises phosphorus.
  • phosphorus implant region 24 contains a peak concentration depth 26 , which is defined as the depth at which the maximum concentration of phosphorus from phosphorus implant 22 is found.
  • an implant such as implant 22 will produce a Gaussian distribution of implanted material across a thickness “X”.
  • the peak concentration depth 26 is typically found at approximately the center of implanted region 24 .
  • dopant 22 is implanted at an energy of 2800 KeV and a dose of from about 1 ⁇ 10 12 atoms/cm 2 to about 5 ⁇ 10 13 atoms/cm 2 , with a most preferred dose being about 5 ⁇ 10 12 atoms/cm 2 .
  • the phosphorus peak concentration depth 26 is greater than or equal to about 1 micron beneath an outer surface 28 of the semiconductor material of wafer 10 , and most preferably is greater than or equal to about 2 microns beneath an outer surface 28 , and less than or equal to about 4 microns beneath the outer surface.
  • phosphorus implant region 24 will have a thickness “X” within which substantially all of the implanted phosphorus is contained which is greater than about 2 microns and less than about 5 microns.
  • dopant 22 preferably comprises boron.
  • implant 22 most preferably comprises atomic boron, and is preferably implanted a dose of from about 1 ⁇ 10 12 atoms/cm 2 to about 5 ⁇ 10 13 atoms/cm 2 , and an energy of about 930 KeV.
  • a neutral-conductivity-type dopant 30 is implanted to form a neutral-conductivity-type-dopant implant region 32 within wafer 10 .
  • Neutral-type dopant 30 preferably comprises an element selected from the group consisting of Si, O, C, N, Ar and Ge.
  • Region 32 is shown as being entirely contained within region 24 , however, in other embodiments of the invention which are not shown, region 32 may extend beyond region 24 . Regardless of whether region 32 is entirely contained within region 24 , the implant of dopant 30 preferably forms a metals gettering damage region 36 entirely contained within second-type implant region 24 .
  • Neutral-conductivity-type-dopant-implant region 32 has a peak concentration depth 34 wherein the concentration of neutral-conductivity-type-dopant is maximized. As shown, peak concentration depth 34 preferably lies within implant region 24 .
  • Damage region 36 has a thickness “Y”, which is preferably from about 0.5 microns to about 0.8 microns. Accordingly, if dopant 30 comprises atomic silicon, the implant of dopant 30 is preferably conducted at an energy of from about 2500 KeV to about 2800 KeV and with a dose of from about 9 ⁇ 10 12 atoms/cm 2 to about 9.5 ⁇ 10 14 atoms/cm 2 . Most preferably, the dose is about 1 ⁇ 10 14 atoms/cm 2 .
  • neutral-conductivity-type-dopant 30 is implanted after the implant of second-type dopant 22 .
  • neutral-conductivity-type dopant 30 could also be implanted before, or simultaneously with, dopant 22 .
  • dopant 30 is preferably comprises atomic silicon and dopant 22 preferably comprises atomic phosphorus.
  • the atomic silicon will preferably be generated from a source gas comprising one or more of the compounds silicon hexafluoride and silicon hexachloride, and the atomic phosphorus will preferably be generated from a source gas comprising phosphine.
  • the total combined dose of the dopants 22 and 30 is preferably from 1 ⁇ 10 13 atoms/cm 2 to about 1 ⁇ 10 15 atoms/cm 2 , and most preferably is about 1 ⁇ 10 14 atoms/cm 2 .
  • the neutral-type dopant 30 will generally make the largest contribution to the formation of damage layer 36
  • the implant of second-type dopant 22 will likely also create some damage to wafer 10 .
  • the total combined dose of dopant 22 and dopant 30 can be an important parameter to control in regulating the overall size of damage region 36 .
  • FIG. 6 the wafer of FIG. 4 is shown subsequent to a thermal processing step.
  • the thermal processing step has driven metallic contaminants 20 into damage region 36 .
  • contaminants 20 are effectively gathered within the damage region 36 , so that the region functions as a gettering region 36 .
  • neutral-type-dopant implant region 32 of FIG. 5 is not shown in FIG. 6. This is because a gettering thermal processing step will typically diffuse neutral type dopant 30 throughout a semiconductor material. Accordingly, there will generally be no clearly defined neutral-type-dopant implant region 32 subsequent to such a thermal processing step.
  • FIGS. 7 and 8 illustrate expanded views of FIG. 6 and further illustrate two separate embodiments of the invention.
  • FIG. 7 illustrates an embodiment of the invention in which background region 18 is a p-type region and in which implant region 24 is an n-type region.
  • FIG. 8 illustrates the opposite arrangement of regions wherein background region 18 is an n-type region and implant region 24 is a p-type region.
  • FIGS. 7 and 8 illustrate separate embodiments in which a p-type region and an n-type region together form a gettering diode 40 which can be used to restrict the flow of electrons 42 within a semiconductor material 10 and to thereby contain the spurious electrons 42 .
  • FIG. 7 the figure illustrates an embodiment of the invention in which a damage region 36 is contained within an n-type region 24 which itself is contained within a p-type region 18 . Together, n-type region 24 and p-type region 18 form the gettering diode 40 . As illustrated, a reverse bias is applied to the gettering diode 40 to effectively contain diffusion current electrons 42 within n-type region 24 . In the shown embodiment, contaminants 20 are illustrated as metallic contaminants “M” which have gettered into damage region 36 .
  • a damage region 36 is contained within a p-type region 24 which in turn is contained within an n-type region 18 .
  • n-type region 18 and p-type region 24 form a gettering diode 40 within which spurious electrons 42 are contained.
  • a reverse bias is applied to gettering diode 40 to contain holes 43 within p-type region 24 .
  • Such holes 43 may, for instance, comprise the positive counterpart of diffusion current electrons 42 .

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Abstract

In one aspect, the invention pertains to a method of forming a gettering region within an Si semiconductor wafer, the method including: a) providing a semiconductor material wafer; b) providing a background region within the semiconductor material wafer, the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type; c) implanting a second-type conductivity enhancing dopant into the background region to form a second-type implant region entirely contained within the background region, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant of the background region; and d) implanting a neutral-conductivity-type conductivity enhancing dopant into the second-type implant region to form a metals gettering damage region entirely contained within the second-type implant region. The invention also pertains to gettering region structures.

Description

    TECHNICAL FIELD
  • This invention relates generally to methods of forming gettering regions within silicon semiconductor wafers and to gettering regions formed by such methods. [0001]
    • BACKGROUND OF THE INVENTION
  • Impurity contamination of Si semiconductor wafers is a problem within the semiconductor industry. Of particular concern are metallic contaminants, such as iron, nickel and copper. When such impurities are present in a Si semiconductor device, the impurities degrade the characteristics and reliability of the device. As integration in semiconductor devices becomes increasingly dense, the tolerance for metallic contaminants becomes increasingly stringent. [0002]
  • Among the methods for decreasing metallic contamination in semiconductor wafers are methods for improving cleanliness in plants which manufacture such semiconductive devices. However, regardless of how many steps are taken to insure clean production of semiconductor devices, some degree of contamination by metals is inevitable. Accordingly, it is desirable to develop methods and structure for isolating metallic contaminants present in semiconductor wafers from devices which are ultimately formed within and upon such wafers. The act of isolating these contaminants is generally referred to as gettering, as the contaminants are gathered, or gettered, to specific areas within a semiconductor wafer. [0003]
  • Conventional processes for gettering metallic contaminants often focus on creating defects or damage within a semiconductor wafer in a region where gettering is sought to occur. Generally, such gettering regions are formed well below the regions of a wafer where device formation will ultimately occur and separated from such regions by an expanse of substrate. Two embodiments of such prior art methods are shown with reference to FIGS. 1 and 2. Referring to these figures, a [0004] 8 semiconductor wafer 10 comprises a front-side surface 12 and a backside surface 14. Front-side surface 12 is defined as a surface where device formation will ultimately occur. A damage region 16 is formed beneath front-side surface 12 and is placed deep enough within the substrate that later devices formed on front-side surface 12 are isolated from the damage region 16. Damage region 16 is typically formed by introducing impurities into the lattice of the semiconductor material of wafer 10. In FIG. 1, damage region 16 is a layer within the middle of substrate 10, while in FIG. 2, damage region 16 is a layer along back-side 14 of wafer 10. After damage region 16 is formed, wafer 10 is heated to drive metallic contaminants into the damage region.
  • A problem of increasing concern as semiconductor devices become increasingly smaller is substrate-background current, or diffusion current. Such diffusion current is function of device temperature and increases exponentially with temperature. Thus, if the temperature of a semiconductor wafer increases, such as typically occurs during operation of semiconductor devices, the diffusion current generally also increases. At a given temperature, more diffusion current will generally form from a defect region of a semiconductor wafer than from a region without defects. Thus, [0005] damage regions 16 tend to generate more diffusion current at a given temperature than do other regions of a semiconductor wafer 10.
  • The diffusion current electrons formed in [0006] damage region 16 will generally drift away from damage region 16, potentially toward front-side surface 12. Such electrons at front-side surface 12 may degrade the performance of devices that are later formed on surface 12.
  • For the above-described reasons, it would be desirable to develop a gettering region which could collect diffusion current electrons. Also, since hole counterparts of the diffusion current electrons can also be generated as the diffusion current electrons are generated, it would also be desirable to develop a gettering region which could collect such holes.[0007]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0008]
  • FIG. 1 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment containing a gettering region of a type known in the prior art. [0009]
  • FIG. 2 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment containing a gettering region of a type known in the prior art. [0010]
  • FIG. 3 is a diagrammatic fragmentary sectional view of a semiconductor wafer fragment shown at a processing step in accordance with the invention. [0011]
  • FIG. 4 is a view of the FIG. 3 fragment shown at a processing step subsequent to that shown in FIG. 3. [0012]
  • FIG. 5 is a view of the FIG. 3 wafer shown at a step subsequent to that of FIG. 4. [0013]
  • FIG. 6 is a view of the FIG. 3 wafer shown at a step subsequent to that of FIG. 5. [0014]
  • FIG. 7 is an expanded view of area [0015] 7 of FIG. 6 showing one embodiment of the invention.
  • FIG. 8 is an expanded view of area [0016] 7 of FIG. 6 showing an embodiment of the invention different from the embodiment shown in FIG. 7.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8). [0017]
  • In one aspect of the invention, the invention is a method of forming a gettering region within an Si semiconductor wafer comprising the following steps: [0018]
  • providing a semiconductor material wafer; [0019]
  • providing a background region within the semiconductor material wafer, the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type; [0020]
  • implanting a second-type conductivity enhancing dopant into the background region to form a second-type implant region entirely contained within the background region, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant of the background region; and [0021]
  • implanting a neutral-conductivity-type conductivity enhancing dopant into the second-type implant region to form a metals gettering damage region entirely contained within the second-type implant region. [0022]
  • In another aspect of the invention, the invention is a method of forming a gettering region within an Si semiconductor wafer comprising the following steps: [0023]
  • providing a semiconductor material wafer; [0024]
  • implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region therein; [0025]
  • implanting silicon within the semiconductor material wafer to form a silicon implant region; and [0026]
  • the step of implanting silicon occurring simultaneously with the step of implanting phosphorus. [0027]
  • In yet another aspect of the invention, the invention is a gettering diode within an Si semiconductor material wafer comprising: [0028]
  • a background region within the semiconductor material wafer, the background region comprising a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type; [0029]
  • a second-type conductivity implant region entirely contained within the background region, the second-type implant region comprising a second-type conductivity enhancing dopant, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant; and [0030]
  • a metals gettering damage region entirely contained within the second-type implant region in the semiconductor material, the first-type background region and the second-type implant region together forming a gettering diode which surrounds the damage region. [0031]
  • More specifically, the invention relates to methods of forming gettering regions within silicon semiconductor wafers and of forming gettering diodes which may collect positive or negative charges, as either electrons or holes, depending on the polarity of the collector. The invention is further described with reference to FIGS. [0032] 3-5.
  • Referring to FIG. 3, a [0033] wafer 10 of semiconductor material, preferably silicon, is provided. Wafer 10 preferably comprises a background region 18 which is conductively doped with a first-type conductivity enhancing dopant (not shown). The first-type conductivity enhancing dopant is either n-type or p-type, so that background region 18 is either an n-type or p-type region. Wafer 10 further comprises contaminants 20, which may include metallic contaminants, such as metallic contaminants selected from the group consisting of iron, nickel and copper.
  • Referring to FIG. 4, a second-type [0034] conductivity enhancing dopant 22 is implanted into background region 18 to form second-type implant region 24 entirely contained within background region 18. Second-type dopant 22 is of an opposite type than the first-type dopant. Thus, if background region 18 is n-type, implant region 24 is p-type, and vice versa.
  • In the embodiment of the invention in which [0035] background region 18 is p-type and dopant 22 is n-type, dopant 22 preferably comprises phosphorus. In such a preferred embodiment, phosphorus implant region 24 contains a peak concentration depth 26, which is defined as the depth at which the maximum concentration of phosphorus from phosphorus implant 22 is found. Typically, an implant such as implant 22 will produce a Gaussian distribution of implanted material across a thickness “X”. Thus, the peak concentration depth 26 is typically found at approximately the center of implanted region 24. Preferably, dopant 22 is implanted at an energy of 2800 KeV and a dose of from about 1×1012 atoms/cm2 to about 5×1013 atoms/cm2, with a most preferred dose being about 5×1012 atoms/cm2. Under such preferable conditions, the phosphorus peak concentration depth 26 is greater than or equal to about 1 micron beneath an outer surface 28 of the semiconductor material of wafer 10, and most preferably is greater than or equal to about 2 microns beneath an outer surface 28, and less than or equal to about 4 microns beneath the outer surface. Also, under such preferable conditions, phosphorus implant region 24 will have a thickness “X” within which substantially all of the implanted phosphorus is contained which is greater than about 2 microns and less than about 5 microns.
  • In the embodiment of the invention in which the [0036] background region 18 is n-type and dopant 22 is p-type, dopant 22 preferably comprises boron. In this embodiment, implant 22 most preferably comprises atomic boron, and is preferably implanted a dose of from about 1×1012 atoms/cm2 to about 5×1013 atoms/cm2, and an energy of about 930 KeV.
  • Referring to FIG. 5, a neutral-conductivity-[0037] type dopant 30 is implanted to form a neutral-conductivity-type-dopant implant region 32 within wafer 10. Neutral-type dopant 30 preferably comprises an element selected from the group consisting of Si, O, C, N, Ar and Ge. Region 32 is shown as being entirely contained within region 24, however, in other embodiments of the invention which are not shown, region 32 may extend beyond region 24. Regardless of whether region 32 is entirely contained within region 24, the implant of dopant 30 preferably forms a metals gettering damage region 36 entirely contained within second-type implant region 24.
  • Neutral-conductivity-type-dopant-[0038] implant region 32 has a peak concentration depth 34 wherein the concentration of neutral-conductivity-type-dopant is maximized. As shown, peak concentration depth 34 preferably lies within implant region 24.
  • [0039] Damage region 36 has a thickness “Y”, which is preferably from about 0.5 microns to about 0.8 microns. Accordingly, if dopant 30 comprises atomic silicon, the implant of dopant 30 is preferably conducted at an energy of from about 2500 KeV to about 2800 KeV and with a dose of from about 9×1012 atoms/cm2 to about 9.5×1014 atoms/cm2. Most preferably, the dose is about 1×1014 atoms/cm2.
  • In the shown embodiment, neutral-conductivity-type-[0040] dopant 30 is implanted after the implant of second-type dopant 22. However, neutral-conductivity-type dopant 30 could also be implanted before, or simultaneously with, dopant 22. If dopant 30 is implanted simultaneously with dopant 22, dopant 30 is preferably comprises atomic silicon and dopant 22 preferably comprises atomic phosphorus. Under such preferable conditions, the atomic silicon will preferably be generated from a source gas comprising one or more of the compounds silicon hexafluoride and silicon hexachloride, and the atomic phosphorus will preferably be generated from a source gas comprising phosphine.
  • Under the preferred conditions in which dopant [0041] 22 comprises phosphorus and dopant 30 comprises silicon, the total combined dose of the dopants 22 and 30 is preferably from 1×1013 atoms/cm2 to about 1×1015 atoms/cm2, and most preferably is about 1×1014 atoms/cm2. Even though the neutral-type dopant 30 will generally make the largest contribution to the formation of damage layer 36, the implant of second-type dopant 22 will likely also create some damage to wafer 10. Thus, the total combined dose of dopant 22 and dopant 30 can be an important parameter to control in regulating the overall size of damage region 36.
  • Referring to FIG. 6, the wafer of FIG. 4 is shown subsequent to a thermal processing step. As shown, the thermal processing step has driven [0042] metallic contaminants 20 into damage region 36. Thus, contaminants 20 are effectively gathered within the damage region 36, so that the region functions as a gettering region 36. It will be noted that neutral-type-dopant implant region 32 of FIG. 5 is not shown in FIG. 6. This is because a gettering thermal processing step will typically diffuse neutral type dopant 30 throughout a semiconductor material. Accordingly, there will generally be no clearly defined neutral-type-dopant implant region 32 subsequent to such a thermal processing step.
  • FIGS. 7 and 8 illustrate expanded views of FIG. 6 and further illustrate two separate embodiments of the invention. FIG. 7 illustrates an embodiment of the invention in which [0043] background region 18 is a p-type region and in which implant region 24 is an n-type region. In contrast, FIG. 8 illustrates the opposite arrangement of regions wherein background region 18 is an n-type region and implant region 24 is a p-type region. FIGS. 7 and 8 illustrate separate embodiments in which a p-type region and an n-type region together form a gettering diode 40 which can be used to restrict the flow of electrons 42 within a semiconductor material 10 and to thereby contain the spurious electrons 42.
  • Referring first to FIG. 7, the figure illustrates an embodiment of the invention in which a [0044] damage region 36 is contained within an n-type region 24 which itself is contained within a p-type region 18. Together, n-type region 24 and p-type region 18 form the gettering diode 40. As illustrated, a reverse bias is applied to the gettering diode 40 to effectively contain diffusion current electrons 42 within n-type region 24. In the shown embodiment, contaminants 20 are illustrated as metallic contaminants “M” which have gettered into damage region 36.
  • Referring to FIG. 8, an embodiment of the invention is shown in which a [0045] damage region 36 is contained within a p-type region 24 which in turn is contained within an n-type region 18. Together, n-type region 18 and p-type region 24 form a gettering diode 40 within which spurious electrons 42 are contained. As illustrated, a reverse bias is applied to gettering diode 40 to contain holes 43 within p-type region 24. Such holes 43 may, for instance, comprise the positive counterpart of diffusion current electrons 42.
  • Methods for applying reverse bias to diodes are generally known to persons of ordinary skill in the art. [0046]
  • In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. [0047]

Claims (44)

1. A method of forming a gettering region within an Si semiconductor wafer comprising the following steps:
providing a semiconductor material wafer;
providing a background region within the semiconductor material wafer, the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type;
implanting a second-type conductivity enhancing dopant into the background region to form a second-type implant region entirely contained within the background region, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant of the background region, the first-type background region and the second-type implant region together forming a gettering diode;
implanting a neutral-conductivity-type conductivity enhancing dopant into the second-type implant region to form a metals gettering damage region entirely contained within the second-type implant region, and
applying a voltage bias to the gettering diode to effectively collect electrons within the gettering diode.
2. The method of claim 1 wherein the neutral-conductivity-type conductivity enhancing dopant comprises an element selected from the group consisting of Si, O, C, N, Ar, and Ge.
3. The method of claim 1 wherein the step of implanting the neutral-conductivity-type conductivity enhancing dopant occurs after the step of implanting the second-type conductivity enhancing dopant.
4. The method of claim 1 wherein the step of implanting the neutral-conductivity-type conductivity enhancing dopant occurs before the step of implanting the second-type conductivity enhancing dopant.
5. The method of claim 1 wherein the step of implanting the neutral-conductivity-type conductivity enhancing dopant occurs simultaneously with the step of implanting the second-type conductivity enhancing dopant.
6. The method of claim 1 wherein the first-type conductivity enhancing dopant is n-type and wherein the second-type conductivity enhancing dopant is p-type.
7. The method of claim 1 wherein the first-type conductivity enhancing dopant is n-type, wherein the second-type conductivity enhancing dopant is p-type, and wherein the second-type conductivity enhancing dopant comprises boron.
8. The method of claim 1 wherein the first-type conductivity enhancing dopant is n-type, wherein the second-type conductivity enhancing dopant is p-type, wherein the n-type background region and the p-type implant region together form the gettering diode, and wherein the step of applying a bias to the gettering diode comprises applying a reverse bias to the gettering diode.
9. The method of claim 1 wherein the first-type conductivity enhancing dopant is p-type and wherein the second-type conductivity enhancing dopant is n-type.
10. The method of claim 1 wherein the first-type conductivity enhancing dopant is p-type, wherein the second-type conductivity enhancing dopant is n-type, and wherein the second-type conductivity enhancing dopant comprises phosphorus.
11. The method of claim 1 wherein the first-type conductivity enhancing dopant is p-type, wherein the second-type conductivity enhancing dopant is n-type, wherein the p-type background region and the n-type implant region together form the gettering diode, and wherein the step of applying bias to the gettering diode comprises applying a reverse bias to the gettering diode.
12. A method of forming a gettering region within an Si semiconductor wafer comprising the following steps:
providing a semiconductor material wafer;
implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region therein;
implanting silicon within the semiconductor material wafer to form a silicon implant region, the silicon implant region having a peak concentration depth lying within the phosphorus implant region; and
the combined silicon and phosphorus implants being provided to implant doses effective to form a metals gettering damage region which is entirely contained within the phosphorus implant region.
13. The method of forming a gettering region of claim 12 wherein the semiconductor material wafer comprises a background p-type region and wherein the phosphorus implant region is entirely contained within the p-type region.
14. The method of forming a gettering region of claim 12 wherein the step of implanting silicon occurs after the step of implanting phosphorus.
15. The method of forming a gettering region of claim 12 wherein the step of implanting silicon occurs before the step of implanting phosphorus.
16. The method of forming a gettering region of claim 12 wherein the step of implanting silicon occurs simultaneously with the step of implanting phosphorus.
17. The method of forming a gettering region of claim 12 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, and the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface.
18. The method of forming a gettering region of claim 12 wherein the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, and the thickness being greater than about 2 microns and less than about 5 microns.
19. The method of forming a gettering region of claim 12 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface, the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, and the thickness being greater than about 2 microns and less than about 5 microns.
20. The method of forming a bettering region of claim 12 wherein the damage region has a thickness of from about 0.5 microns and to about 0.8 microns.
21. The method of forming a gettering region of claim 12 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface, the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, the thickness of the phosphorus implant region being greater than about 2 microns and less than about 5 microns, and the damage region has a thickness of from about 0.5 microns and to about 0.8 microns.
22. The method of forming a gettering region of claim 12 wherein the combined dose of implanted silicon and implanted phosphorus is from about 1×1013 atoms/cm2 to about 1×1015 atoms/cm2.
23. The method of forming a gettering region of claim 12 wherein the silicon implant dose is from about 9×1012 atoms/cm2 to about 9.5×1014 atoms/cm2, and the phosphorus implant dose is from about 1×1012 atoms/cm2 to about 5×1013 atoms/cm2.
24. A semiconductor wafer processed in accordance with the method of claim 12.
25. A method of forming a gettering region within an Si semiconductor wafer comprising the following steps:
providing a semiconductor material wafer;
implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region therein;
implanting silicon within the semiconductor material wafer to form a silicon implant region; and
the step of implanting silicon occurring simultaneously with the step of implanting phosphorus.
26. A method of forming a gettering region within an Si semiconductor wafer, comprising:
providing a semiconductor material wafer, the semiconductor material having an outer surface;
implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region within the wafer, the phosphorus implant region having a peak concentration depth, the phosphorus peak concentration depth being greater than or equal to about 1 microns beneath the outer surface; and
implanting a neutral-conductivity-type dopant within the material wafer, the combined neutral-conductivity-type dopant implant and phosphorus implant forming a metals gettering damage region that is entirely contained within the phosphorus implant region.
27. The method of forming a gettering region of claim 26 wherein the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, the thickness being more than about 2 microns and less than about 5 microns.
28. A semiconductor wafer processed in accordance with the method of claim 26.
29. A gettering region within an Si semiconductor material wafer comprising:
a background region within the semiconductor material wafer, the background region comprising a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type;
a second-type conductivity implant region entirely contained within the background region, the second-type implant region comprising a second-type conductivity enhancing dopant, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant;
a metals gettering damage region entirely contained within the second-type implant region; and
a gettering diode comprising the. first-type background region and the second-type implant region, the gettering diode surrounding the damage region.
30. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is n-type, and wherein the second-type conductivity enhancing dopant is p-type.
31. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is n-type, wherein the second-type conductivity enhancing dopant is p-type, and wherein the second-type conductivity enhancing dopant comprises boron.
32. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is n-type, wherein the second-type conductivity enhancing dopant is p-type, and further comprising a reverse bias applied to the gettering diode.
33. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is p-type, and wherein the second-type conductivity enhancing dopant is n-type.
34. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is p-type, wherein the second-type conductivity enhancing dopant is n-type, and wherein the second-type conductivity enhancing dopant comprises phosphorus.
35. The gettering region of claim 29 wherein the first-type conductivity enhancing dopant is p-type, wherein the second-type conductivity enhancing dopant is n-type, and further comprising a reverse bias applied to the gettering diode.
36. A gettering region within an Si semiconductor material wafer comprising:
a phosphorus implant region formed within a background p-type region in the semiconductor material;
a silicon implant region having a peak silicon implant concentration depth located within the phosphorus implant region; and
a metals gettering damage region encompassing the peak silicon implant concentration depth and being entirely contained within the phosphorus implant region, the phosphorus implant region and the background p-type region together forming a gettering diode which surrounds the damage region.
37. The gettering region of claim 36 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, and the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface.
38. The gettering region of claim 36 wherein the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, and the thickness being greater than about 2 microns and less than about 5 microns.
39. The gettering region of claim 36 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface, the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, and the thickness being greater than about 2 microns and less than about 5 microns.
40. The gettering region of claim 36 wherein the damage region has a thickness greater than about 0.5 microns and less than about 0.8 microns.
41. The gettering region of claim 36 wherein the semiconductor material has an outer surface, the phosphorus implant region has a peak concentration depth, the phosphorus peak concentration depth is greater than or equal to about 1 micron beneath the outer surface, the phosphorus implant region has a thickness within which substantially all of the implanted phosphorus is contained, the thickness being greater than about 2 microns and less than about 5 microns, and the damage region having a thickness greater than about 0.5 microns and less than about 0.8 microns.
42. A gettering region within an Si semiconductor wafer, the semiconductor wafer having an outer surface, the gettering region comprising:
a phosphorus implant region, the phosphorus implant region having a peak concentration depth, the peak concentration depth being greater than or equal to about 1 microns deep beneath the wafer outer surface; and
a metals gettering damage region entirely contained within the phosphorus implant region.
43. The gettering region of claim 42 wherein the damage region is within a neutral-conductivity-type-dopant implant region.
44. An Si semiconductor wafer comprising:
a phosphorus implant region; and
a silicon implant region, the silicon implant region having a peak silicon implant concentration depth, the peak silicon implant concentration depth lying within the phosphorus implant region.
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