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US10497882B2 - Light emitting diode and method of fabricating the same - Google Patents

Light emitting diode and method of fabricating the same Download PDF

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US10497882B2
US10497882B2 US15/589,061 US201715589061A US10497882B2 US 10497882 B2 US10497882 B2 US 10497882B2 US 201715589061 A US201715589061 A US 201715589061A US 10497882 B2 US10497882 B2 US 10497882B2
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transport layer
light emitting
emitting diode
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hole transport
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Tzung-Fang Guo
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National Cheng Kung University NCKU
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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H01L51/0077—
    • H01L51/0003—
    • H01L51/0008—
    • H01L51/0029—
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H01L2251/303—
    • H01L51/5012—
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers

Definitions

  • the present disclosure relates to a diode and a method of fabricating the same, and more particularly to a light emitting diode and a method of fabricating the same.
  • DSSC dye-sensitized solar cells
  • organic-inorganic hybrid perovskite crystalline material methylammonium lead iodide (CH 3 NH 3 Pbl 3 )
  • organic polymers including (Poly (3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT: PSS) as a hole transport layer to prepare a solid state DSSC.
  • PEDOT poly(styrene-sulfonate)
  • a perovskite structure can also be used as an active layer of a light emitting diode for emitting a light.
  • the conventional light emitting diode with the perovskite structure cannot achieve a satisfying requirement on a highest luminous intensity and a luminous efficiency.
  • An object of the present disclosure is to provide a light emitting diode, which uses an active layer with a mesophase structure (also referred to as an intermediate structure) to improve a luminous intensity and a luminous efficiency of the light emitting diode.
  • a mesophase structure also referred to as an intermediate structure
  • Another object of the present disclosure is to provide a method of fabricating a light emitting diode, which uses an organic amine compound gas to perform a modifying step on a perovskite structure compound layer, so as to form an active layer with a mesophase structure of an organic amine compound and a perovskite structure compound. Therefore, a luminous intensity and a luminous efficiency of the resulting light emitting diode are improved.
  • the present disclosure provides a light emitting diode, comprising: a hole transport layer, an active layer, and an electron transport layer.
  • the active layer is disposed on the hole transport layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound.
  • the electron transport layer is disposed on the active layer.
  • the hole transport layer is formed of nickel oxide.
  • the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
  • the organic amine compound is selected from alkylamine or alkylenediamine.
  • a structural formula of the perovskite structure compound is AMX 3 , wherein the A is selected from group IA metal, H, NH 4 , alkylamine, or alkylenediamine; the M is Pb, Sn, or Ge; and the X is Cl, Br, or I.
  • the present disclosure provides a method of fabricating a light emitting diode, comprising steps of: providing a hole transport layer; forming a perovskite structure compound layer on the hole transport layer; performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; and forming an electron transport layer on the active layer.
  • the organic amine compound gas is selected from alkylamine gas or alkylenediamine gas.
  • the hole transport layer is formed of nickel oxide, wherein the nickel oxide is NiO, Ni 2 O 3 or a complex thereof.
  • the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
  • a structural formula of the perovskite structure compound is AMX 3 , wherein A is selected from group IA metal, H, NH 4 , alkylamine, or alkylenediamine; M is Pb, Sn, or Ge; and X is Cl, Br, or I.
  • FIG. 1 is a cross-sectional schematic diagram of a light emitting diode according to one embodiment of the present disclosure.
  • FIG. 2 is a flow chart of a method of fabricating a light emitting diode according to one embodiment of the present disclosure.
  • FIG. 3A is an experimental data diagram of luminous intensity versus voltage, during the modifying step, which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively).
  • FIG. 3B is an experimental data diagram of luminous efficiency versus current density, during the modifying step, which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively).
  • FIG. 1 is a cross-sectional schematic diagram of a light emitting diode 10 according to one embodiment of the present disclosure.
  • the light emitting diode 10 includes a hole transport layer 11 , an active layer 12 , and an electron transport layer 13 .
  • the hole transport layer 11 can be disposed on a transparent conductive substrate 14 .
  • the transparent conductive substrate 14 is formed by coating Indium tin oxide (ITO) on a glass substrate.
  • ITO Indium tin oxide
  • PEDOT:PSS poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)
  • PEDOT:PSS poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)
  • the hole transport layer cab be formed of nickel oxide (NiO x ), such as NiO, Ni 2 O 3 or a complex thereof.
  • a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm).
  • the active layer 12 is disposed on the hole transport layer 11 , wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound.
  • the active layer 12 is used to produce a light.
  • the organic amine compound can be selected from alkylamine (R n NH 2 ) or alkylenediamine (R n (NH 2 ) 2 ).
  • the alkylamine is, for example, Methylamine (MA; CH 3 NH 2 ).
  • the perovskite structure compound includes methylamine lead halide (CH 3 NH 3 PbX 3 ), wherein X is Cl, Br, or I.
  • a thickness of the active layer 12 is ranged from 380 nm to 400 nm (e.g., 390 nm).
  • mesophase structure or “intermediate structure” means that a structure is formed after the perovskite structure compound is modified by an organic amine compound.
  • a mesophase structure of CH 3 NH 2 /CH 3 NH 3 PbX 3 is obtained by using a methylamine gas to modify a methylamine lead halide.
  • the electron transport layer 13 is disposed on the active layer 12 .
  • the electron transport layer 13 can be formed of TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), Bphen, BCP, TpPyPB, DPPS, or ZnO. It is to be noted that other materials commonly used in the electron transport layer 13 in the art may also be used.
  • a thickness of the electron transport layer 13 is, for example, ranged from 1 to 1000 nm.
  • the thickness can be 50 nm, 100 nm, 200 nm, 500 nm, or 750 nm.
  • an electrode 15 can be disposed on the electron transport layer 13 .
  • a lithium fluoride (LiF) layer 151 and an aluminum (Al) layer 152 is sequentially stacked on the electron transport layer 13 .
  • a thickness of the lithium fluoride layer 151 is ranged from 0.8 to 1.2 nm (e.g., 0.9 nm, 1.0 nm, or 1.1 nm).
  • a thickness of the aluminum layer 152 is ranged from 70 to 100 nm (e.g., 75 nm, 80 nm, 85 nm, 90 nm, or 95 nm).
  • FIG. 2 is a flow chart of a method 20 of fabricating a light emitting diode according to one embodiment of the present disclosure.
  • the method 20 of fabricating the light emitting diode 10 mainly includes the following steps 21 to 24 of: providing a hole transport layer 11 (step 21 ); forming a perovskite structure compound layer on the hole transport layer 11 (step 22 ); performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer 12 , wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound (step 23 ); and forming an electron transport layer 13 on the active layer 12 (step 24 ).
  • steps 21 to 24 of: providing a hole transport layer 11 (step 21 ); forming a perovskite structure compound layer on the hole transport layer 11 (step 22 ); performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer
  • the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 21 of: providing a hole transport layer 11 .
  • the hole transport layer 11 is formed on a transparent conductive substrate 14 .
  • the transparent conductive substrate 14 is formed by coating Indium tin oxide (ITO) on a glass substrate.
  • ITO Indium tin oxide
  • a commercially available PEDOT:PSS poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)
  • the hole transport layer 11 can be formed of nickel oxide (NiO x ), such as NiO, Ni 2 O 3 or a complex thereof.
  • a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm).
  • a nickel dicarboxylate (Ni(HCOO) 2 ) powder (or other organic metal salt powders, such as an organic nickel salt powder, an organic copper salt powder or an organic gold salt powder) is put in a container, and ethylene glycol (or other alcohols), ethanolamine and ethylenediamine solvents are added into the container. After stirring and dissolving, an organic metal gel solution is formed. Thereafter, the organic metal gel solution is spin-coated on the transparent conductive substrate 14 at a rotation speed of 4500 RPM for 90 seconds.
  • the coated transparent conductive substrate 14 is heated in an air atmosphere or an oxygen atmosphere at a temperature from 10 to 1000° C. (e.g., about 400° C.) for about 1 to 600 minutes (for example, about 10 minutes), so as to achieve the flat hole transport layer 11 .
  • a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm).
  • the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 22 of: forming a perovskite structure compound layer on the hole transport layer 11 .
  • step 22 for example, CH 3 NH 3 Br powder and PbBr 2 powder can be mixed at a molar ration of 1.05:1 and added into a solvent (such as N,N-Dimethylmethanamide, Dimethyl sulfoxide(DMSO) or ⁇ -Butyrolactone), so as to prepare a mixed solution of 50% by weight. Thereafter, the mixed solution is spin-coated on the hole transport layer 11 and heated at a temperature from 50 to 500° C.
  • a solvent such as N,N-Dimethylmethanamide, Dimethyl sulfoxide(DMSO) or ⁇ -Butyrolactone
  • the spin-coated process can be divided into two stages. For example, a first stage has a rotation speed of 10-3000 RPM (e.g., 500 RPM) for 1-7 seconds (e.g., 7 seconds); and a second stage has a rotation speed of 3000-10000 RPM (e.g., 3000 RPM) for 1-1000 seconds (e.g., 90 seconds), wherein when the second stage is at 60 seconds, an organic solvent (chlorobenzene, benzene, toluene, diethyl ether, hexane, cyclohexane, chloroform, dichloromethane, or trichloromethane) can be added for washing the mixed solution spin-coated on the hole transport layer 11 , so as to improve a rapid precipitation of CH 3 NH 3 PbBr 2 .
  • an organic solvent chlorobenzene, benzene, toluene, diethyl ether, hexane, cyclohexane, chlor
  • the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 23 of: performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer 12 , wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound.
  • the organic amine compound gas is selected from alkylamine (R n NH 2 ) gas or alkylenediamine (Rn(NH 2 ) 2 ) gas.
  • a solid-state strong alkali e.g., potassium hydroxide, sodium hydroxide
  • a solid-state alkylamine halide e.g., CH 3 NH 2 Cl
  • an alkylamine (R n NH 2 ) gas e.g., methylamine gas
  • a solid-state strong alkali e.g., potassium hydroxide, sodium hydroxide
  • a solid-state alkyl diamine halide can be reacted with a solid-state alkyl diamine halide to form an alkyl diamine (Rn(NH 2 ) 2 ) gas.
  • a water-absorbing agent e.g., calcium oxide
  • the above reaction of producing the alkylamine gas (or the alkylenediamine gas) and the modifying step can be performed in a closed environment.
  • a thickness of the active layer 12 is such as ranged from 380 to 400 nm (e.g., 390 nm).
  • the modifying step is performed for a time ranged from 0.1 to 1000 seconds.
  • the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 24 of: forming an electron transport layer 13 on the active layer 12 .
  • a material selected from TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO can be vapor-deposited on the active layer 12 by a commercially available vacuum thermal evaporator, so as to form the electron transport layer 13 .
  • a thickness of the electron transport layer 13 is, for example, ranged from 1 to 1000 nm (e.g., 50 nm).
  • an electrode 15 can be formed on the electron transport layer 13 by using a vapor-deposition method.
  • a lithium fluoride layer 151 and an aluminum layer 152 is sequentially stacked on the electron transport layer 13 .
  • a thickness of the lithium fluoride layer 151 is ranged from 0.8 to 1.2 nm
  • a thickness of the aluminum layer 152 is ranged from 70 to 100 nm.
  • FIG. 3A is an experimental data diagram of luminous intensity versus voltage, during the modifying step which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively); and FIG. 3B is an experimental data diagram of luminous efficiency versus current density, during the modifying step which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively). It is noted that, the experimental data in FIGS. 3A and 3B also includes an experimental data without performing the modifying step (i.e., 0 seconds) as a comparative example.
  • a light turn-on voltage of the comparative example is about 5.8 V, and light turn-on voltages of the embodiments are all smaller than 4 V.
  • the comparative example has a luminous efficiency of 0.07 cd/A and has a highest luminous intensity of 583.0 cd/m 2 upon a voltage being 9.0 V.
  • a luminous efficiency is 3.1 cd/A and a highest luminous intensity is 6670.0 cd/m 2 upon a voltage being 9.0 V.
  • a luminous efficiency is 3.14 cd/A, and a highest luminous intensity is 16900 cd/m 2 upon a voltage being 9.0 V.
  • a luminous efficiency is 15.9 cd/A and a highest luminous intensity is 65300 cd/m 2 upon a voltage being 9.0 V.
  • a luminous efficiency is 6.04 cd/A and a highest luminous intensity is 31900 cd/m 2 upon a voltage being 9.0 V.
  • the highest luminous intensity and the luminous efficiency of the embodiment of the present disclosure are respectively far more than the highest luminous intensity (20000 cd/m 2 ) and the luminous efficiency (5 cd/A) of the conventional technology.

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Abstract

A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.

Description

CROSS REFERENCE TO RELATED APPLICATION
This application claims priority to U.S. Provisional Application No. 62/369,331, filed Aug. 1, 2016, titled “NiOx electrode interlayer and CH3NH2/CH3NH3PbBr3 interface treatment to markedly advance hybrid perovskite-based light-emitting diodes”, which is incorporated herein by reference in its entirety.
FIELD OF THE DISCLOSURE
The present disclosure relates to a diode and a method of fabricating the same, and more particularly to a light emitting diode and a method of fabricating the same.
BACKGROUND OF THE DISCLOSURE
Currently, dye-sensitized solar cells (DSSC) have been developed to use an organic-inorganic hybrid perovskite crystalline material, methylammonium lead iodide (CH3NH3Pbl3), as a dye-sensitized light-absorbing layer, and organic polymers including (Poly (3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT: PSS) as a hole transport layer to prepare a solid state DSSC. However, a perovskite structure can also be used as an active layer of a light emitting diode for emitting a light. In general, the conventional light emitting diode with the perovskite structure cannot achieve a satisfying requirement on a highest luminous intensity and a luminous efficiency.
Therefore, there is still room for improvement on the highest luminous intensity and the luminous efficiency of the conventional light emitting diode. As a result, it is necessary to provide a light emitting diode and a method of fabricating the same, so as to solve the problems existing in the conventional technologies, as described above.
SUMMARY OF THE DISCLOSURE
An object of the present disclosure is to provide a light emitting diode, which uses an active layer with a mesophase structure (also referred to as an intermediate structure) to improve a luminous intensity and a luminous efficiency of the light emitting diode.
Another object of the present disclosure is to provide a method of fabricating a light emitting diode, which uses an organic amine compound gas to perform a modifying step on a perovskite structure compound layer, so as to form an active layer with a mesophase structure of an organic amine compound and a perovskite structure compound. Therefore, a luminous intensity and a luminous efficiency of the resulting light emitting diode are improved.
In order to achieve the above object, the present disclosure provides a light emitting diode, comprising: a hole transport layer, an active layer, and an electron transport layer. The active layer is disposed on the hole transport layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.
In one embodiment of the present disclosure, the hole transport layer is formed of nickel oxide.
In one embodiment of the present disclosure, the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
In one embodiment of the present disclosure, the organic amine compound is selected from alkylamine or alkylenediamine.
In one embodiment of the present disclosure, a structural formula of the perovskite structure compound is AMX3, wherein the A is selected from group IA metal, H, NH4, alkylamine, or alkylenediamine; the M is Pb, Sn, or Ge; and the X is Cl, Br, or I.
In order to achieve the above object, the present disclosure provides a method of fabricating a light emitting diode, comprising steps of: providing a hole transport layer; forming a perovskite structure compound layer on the hole transport layer; performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; and forming an electron transport layer on the active layer.
In one embodiment of the present disclosure, the organic amine compound gas is selected from alkylamine gas or alkylenediamine gas.
In one embodiment of the present disclosure, the hole transport layer is formed of nickel oxide, wherein the nickel oxide is NiO, Ni2O3 or a complex thereof.
In one embodiment of the present disclosure, the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
In one embodiment of the present disclosure, a structural formula of the perovskite structure compound is AMX3, wherein A is selected from group IA metal, H, NH4, alkylamine, or alkylenediamine; M is Pb, Sn, or Ge; and X is Cl, Br, or I.
DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional schematic diagram of a light emitting diode according to one embodiment of the present disclosure.
FIG. 2 is a flow chart of a method of fabricating a light emitting diode according to one embodiment of the present disclosure.
FIG. 3A is an experimental data diagram of luminous intensity versus voltage, during the modifying step, which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively).
FIG. 3B is an experimental data diagram of luminous efficiency versus current density, during the modifying step, which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively).
 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The structure and the technical means adopted by the present disclosure to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings. Furthermore, directional terms described by the present disclosure, such as upper, lower, front, back, left, right, inner, outer, side, longitudinal/vertical, transverse/horizontal, etc., are only directions by referring to the accompanying drawings, and thus the used directional terms are used to describe and understand the present disclosure, but the present disclosure is not limited thereto.
Please refer to FIG. 1, which is a cross-sectional schematic diagram of a light emitting diode 10 according to one embodiment of the present disclosure. In one embodiment of the present disclosure, the light emitting diode 10 includes a hole transport layer 11, an active layer 12, and an electron transport layer 13. In one embodiment, the hole transport layer 11 can be disposed on a transparent conductive substrate 14. For example, the transparent conductive substrate 14 is formed by coating Indium tin oxide (ITO) on a glass substrate. In one embodiment, a commercially available PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) can be used as the hole transport layer 11. In another embodiment, the hole transport layer cab be formed of nickel oxide (NiOx), such as NiO, Ni2O3 or a complex thereof. In another embodiment, a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm).
The active layer 12 is disposed on the hole transport layer 11, wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound. In one embodiment, the active layer 12 is used to produce a light. In another embodiment, the organic amine compound can be selected from alkylamine (RnNH2) or alkylenediamine (Rn(NH2)2). The alkylamine is, for example, Methylamine (MA; CH3NH2). In one embodiment, the perovskite structure compound includes methylamine lead halide (CH3NH3PbX3), wherein X is Cl, Br, or I. In one embodiment, a thickness of the active layer 12 is ranged from 380 nm to 400 nm (e.g., 390 nm). In another embodiment, a structural formula of the perovskite structure compound is AMX3, wherein the A is selected from group IA metal (Li, Na, K, Rb, or Cs), H, NH4, alkylamine (RnNH2, n=1, 2, 3, or a positive integer greater than 3) or alkylenediamine (Rn(NH2)2, n=1, 2, 3, or a positive integer greater than 3); the M is Pb, Sn, or Ge; and the X is Cl, Br, or I.
It is noted that, of the term “mesophase structure” or “intermediate structure” means that a structure is formed after the perovskite structure compound is modified by an organic amine compound. For example, a mesophase structure of CH3NH2/CH3NH3PbX3 is obtained by using a methylamine gas to modify a methylamine lead halide.
The electron transport layer 13 is disposed on the active layer 12. In one embodiment, the electron transport layer 13 can be formed of TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), Bphen, BCP, TpPyPB, DPPS, or ZnO. It is to be noted that other materials commonly used in the electron transport layer 13 in the art may also be used. In one embodiment, a thickness of the electron transport layer 13 is, for example, ranged from 1 to 1000 nm. For example, the thickness can be 50 nm, 100 nm, 200 nm, 500 nm, or 750 nm.
In one embodiment, an electrode 15 can be disposed on the electron transport layer 13. For example, a lithium fluoride (LiF) layer 151 and an aluminum (Al) layer 152 is sequentially stacked on the electron transport layer 13. In one embodiment, a thickness of the lithium fluoride layer 151 is ranged from 0.8 to 1.2 nm (e.g., 0.9 nm, 1.0 nm, or 1.1 nm). In one embodiment, a thickness of the aluminum layer 152 is ranged from 70 to 100 nm (e.g., 75 nm, 80 nm, 85 nm, 90 nm, or 95 nm).
Please referring to FIGS. 1 and 2. FIG. 2 is a flow chart of a method 20 of fabricating a light emitting diode according to one embodiment of the present disclosure. In one embodiment of the present disclosure, the method 20 of fabricating the light emitting diode 10 mainly includes the following steps 21 to 24 of: providing a hole transport layer 11 (step 21); forming a perovskite structure compound layer on the hole transport layer 11 (step 22); performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer 12, wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound (step 23); and forming an electron transport layer 13 on the active layer 12 (step 24). The implementation details of the above-described steps and the principles thereof will be described in detail below.
At first, the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 21 of: providing a hole transport layer 11. In step 21, the hole transport layer 11 is formed on a transparent conductive substrate 14. For example, the transparent conductive substrate 14 is formed by coating Indium tin oxide (ITO) on a glass substrate. In one embodiment, a commercially available PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) can be used as the hole transport layer 11. In another embodiment, the hole transport layer cab be formed of nickel oxide (NiOx), such as NiO, Ni2O3 or a complex thereof.
In another embodiment, a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm). Specifically, for example, a nickel dicarboxylate (Ni(HCOO)2) powder (or other organic metal salt powders, such as an organic nickel salt powder, an organic copper salt powder or an organic gold salt powder) is put in a container, and ethylene glycol (or other alcohols), ethanolamine and ethylenediamine solvents are added into the container. After stirring and dissolving, an organic metal gel solution is formed. Thereafter, the organic metal gel solution is spin-coated on the transparent conductive substrate 14 at a rotation speed of 4500 RPM for 90 seconds. Then, the coated transparent conductive substrate 14 is heated in an air atmosphere or an oxygen atmosphere at a temperature from 10 to 1000° C. (e.g., about 400° C.) for about 1 to 600 minutes (for example, about 10 minutes), so as to achieve the flat hole transport layer 11. In another embodiment, a thickness of the hole transport layer 11 is ranged from 0.1 nm to 5 nm (e.g., 1 nm).
Then, the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 22 of: forming a perovskite structure compound layer on the hole transport layer 11. In step 22, for example, CH3NH3Br powder and PbBr2 powder can be mixed at a molar ration of 1.05:1 and added into a solvent (such as N,N-Dimethylmethanamide, Dimethyl sulfoxide(DMSO) or γ-Butyrolactone), so as to prepare a mixed solution of 50% by weight. Thereafter, the mixed solution is spin-coated on the hole transport layer 11 and heated at a temperature from 50 to 500° C. (e.g., about 90° C.) for about 1 to 1000 minutes (for example, about 10 minutes). In one embodiment, the spin-coated process can be divided into two stages. For example, a first stage has a rotation speed of 10-3000 RPM (e.g., 500 RPM) for 1-7 seconds (e.g., 7 seconds); and a second stage has a rotation speed of 3000-10000 RPM (e.g., 3000 RPM) for 1-1000 seconds (e.g., 90 seconds), wherein when the second stage is at 60 seconds, an organic solvent (chlorobenzene, benzene, toluene, diethyl ether, hexane, cyclohexane, chloroform, dichloromethane, or trichloromethane) can be added for washing the mixed solution spin-coated on the hole transport layer 11, so as to improve a rapid precipitation of CH3NH3PbBr2.
Then, the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 23 of: performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer 12, wherein the active layer 12 has a mesophase structure of an organic amine compound and a perovskite structure compound. In step 23, the organic amine compound gas is selected from alkylamine (RnNH2) gas or alkylenediamine (Rn(NH2)2) gas. For example, a solid-state strong alkali (e.g., potassium hydroxide, sodium hydroxide) can be reacted with a solid-state alkylamine halide (e.g., CH3NH2Cl) to form an alkylamine (RnNH2) gas (e.g., methylamine gas); or a solid-state strong alkali (e.g., potassium hydroxide, sodium hydroxide) can be reacted with a solid-state alkyl diamine halide to form an alkyl diamine (Rn(NH2)2) gas. It is noted that, when a solid-state potassium hydroxide is reacted with a solid-state CH3NH2Cl, a water vapor is generated. Therefore, a water-absorbing agent (e.g., calcium oxide) can further be used to adsorb the water vapor in the modifying step. In one embodiment, the above reaction of producing the alkylamine gas (or the alkylenediamine gas) and the modifying step can be performed in a closed environment. In one embodiment, a thickness of the active layer 12 is such as ranged from 380 to 400 nm (e.g., 390 nm). In one embodiment, the modifying step is performed for a time ranged from 0.1 to 1000 seconds.
Finally, the method 20 of fabricating the light emitting diode 10 of one embodiment of the present disclosure has the step 24 of: forming an electron transport layer 13 on the active layer 12. In one embodiment, a material selected from TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO can be vapor-deposited on the active layer 12 by a commercially available vacuum thermal evaporator, so as to form the electron transport layer 13. In one embodiment, a thickness of the electron transport layer 13 is, for example, ranged from 1 to 1000 nm (e.g., 50 nm).
In one embodiment, an electrode 15 can be formed on the electron transport layer 13 by using a vapor-deposition method. For example, a lithium fluoride layer 151 and an aluminum layer 152 is sequentially stacked on the electron transport layer 13. In one embodiment, a thickness of the lithium fluoride layer 151 is ranged from 0.8 to 1.2 nm, and a thickness of the aluminum layer 152 is ranged from 70 to 100 nm.
Please refer to FIGS. 3A and 3B. FIG. 3A is an experimental data diagram of luminous intensity versus voltage, during the modifying step which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively); and FIG. 3B is an experimental data diagram of luminous efficiency versus current density, during the modifying step which is performed using different times (20 seconds, 60 seconds, 80 seconds, and 100 seconds, respectively). It is noted that, the experimental data in FIGS. 3A and 3B also includes an experimental data without performing the modifying step (i.e., 0 seconds) as a comparative example.
As can be seen from FIGS. 3A and 3B, a light turn-on voltage of the comparative example is about 5.8 V, and light turn-on voltages of the embodiments are all smaller than 4 V. The comparative example has a luminous efficiency of 0.07 cd/A and has a highest luminous intensity of 583.0 cd/m2 upon a voltage being 9.0 V In one embodiment of performing the modifying step for 20 seconds, a luminous efficiency is 3.1 cd/A and a highest luminous intensity is 6670.0 cd/m2 upon a voltage being 9.0 V. In one embodiment of performing the modifying step for 60 seconds, a luminous efficiency is 3.14 cd/A, and a highest luminous intensity is 16900 cd/m2 upon a voltage being 9.0 V. In one embodiment of performing the modifying step for 80 seconds, a luminous efficiency is 15.9 cd/A and a highest luminous intensity is 65300 cd/m2 upon a voltage being 9.0 V. In one embodiment of performing the modifying step for 100 seconds, a luminous efficiency is 6.04 cd/A and a highest luminous intensity is 31900 cd/m2 upon a voltage being 9.0 V. From above, the embodiments of the present disclosure can indeed improve the luminous efficiency and the luminous intensity of the resulting light emitting diode by the modifying step. Further, it is noted that, when the modifying step is performed for 80 seconds, the highest luminous intensity and the luminous efficiency of the embodiment of the present disclosure are respectively far more than the highest luminous intensity (20000 cd/m2) and the luminous efficiency (5 cd/A) of the conventional technology.
The present disclosure has been described with a preferred embodiments thereof and it is understood that many changes and modifications to the described embodiment can be carried out without departing from the scope and the spirit of the disclosure that is intended to be limited only by the appended claims.

Claims (10)

What is claimed is:
1. A light emitting diode, comprising:
a hole transport layer;
an active layer disposed on the hole transport layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; and
an electron transport layer disposed on the active layer.
2. The light emitting diode according to claim 1, wherein the hole transport layer is formed of nickel oxide.
3. The light emitting diode according to claim 1, wherein the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
4. The light emitting diode according to claim 1, wherein the organic amine compound is selected from alkylamine or alkylenediamine.
5. The light emitting diode according to claim 1, wherein a structural formula of the perovskite structure compound is AMX3, wherein the A is selected from group IA metal, H, NH4, alkylamine, or alkylenediamine; the M is Pb, Sn, or Ge; and the X is Cl, Br, or I.
6. A method of fabricating a light emitting diode, comprising steps of:
providing a hole transport layer;
forming a perovskite structure compound layer on the hole transport layer;
performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; and
forming an electron transport layer on the active layer.
7. The method of fabricating the light emitting diode according to claim 6, wherein the organic amine compound gas is selected from alkylamine gas or alkylenediamine gas.
8. The method of fabricating the light emitting diode according to claim 6, wherein the hole transport layer is formed of nickel oxide, wherein the nickel oxide is NiO, Ni2O3 or a complex thereof.
9. The method of fabricating the light emitting diode according to claim 6, wherein the electron transport layer is formed of TPBi, Bphen, BCP, TpPyPB, DPPS, or ZnO.
10. The method of fabricating the light emitting diode according to claim 6, wherein a structural formula of the perovskite structure compound is AMX3, wherein A is selected from group IA metal, H, NH4, alkylamine, or alkylenediamine; M is Pb, Sn, or Ge; and X is Cl, Br, or I.
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