US10465310B2 - Method and apparatus for electrochemical etching - Google Patents
Method and apparatus for electrochemical etching Download PDFInfo
- Publication number
- US10465310B2 US10465310B2 US15/309,022 US201515309022A US10465310B2 US 10465310 B2 US10465310 B2 US 10465310B2 US 201515309022 A US201515309022 A US 201515309022A US 10465310 B2 US10465310 B2 US 10465310B2
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- Prior art keywords
- electrolyte
- voltage
- magnetic field
- reaction
- electrode
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- Expired - Fee Related, expires
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000005530 etching Methods 0.000 title claims abstract description 25
- 239000003792 electrolyte Substances 0.000 claims abstract description 36
- 238000003487 electrochemical reaction Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 10
- 239000012777 electrically insulating material Substances 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 150000001721 carbon Chemical class 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 75
- 230000008569 process Effects 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000000523 sample Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- C25D5/006—
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
Definitions
- the present invention relates to a method and apparatus for electrochemical etching and relates particularly, but not exclusively, to a method and apparatus for electrochemical etching for the purpose of sharpening probes or blades.
- Microscopy methods such as scanning tunnelling microscopy, require the use of probes having extremely sharp tips with well-defined shapes in order to provide a desired level of resolution for high quality images.
- a sharper probe that is a probe with a narrower tip, provides higher resolution information about a sample while a well-defined probe shape lowers noise levels on resulting images.
- Probes with sharp tips are known to be made using a process known as the “drop-off method”.
- an object to be etched such as a piece of tungsten wire
- an electrolyte such as sodium hydroxide or potassium hydroxide
- the depth of immersion of the lower portion is chosen depending on a desired drop-off time, which governs the ultimate shape of the tips formed by the process.
- a ring-shaped electrode is placed around the immersed portion of the piece of wire and a voltage is applied between the piece of wire and the electrode.
- the shape of the tips can be further affected by the behaviour of the meniscus. As the neck radius decreases and the surface area of the neck increases during the reaction, the meniscus position can change, which leads to the formation of a second neck. This causes undesired variations in the shapes of the final tips, rendering them unsuitable for use in very sensitive applications. Control of the apparatus is required to prevent this from happening.
- Preferred embodiments of the present invention seek to overcome one or more of the above disadvantages associated with the prior art.
- an electrochemical etching method comprising: immersing at least part of one first part of at least one object to be etched and at least part of at least one electrode in an electrolyte; and applying a voltage between at least one said object and at least one said electrode to cause an electrochemical reaction between at least one said first part and said electrolyte to cause at least one reaction product; wherein at least one said first part and at least one said electrode are positioned relative to each other such that at least part of at least one said reaction product accumulates by means of gravity on at least one said first part to reduce a reaction rate of said electrochemical reaction.
- the rate of the electrochemical reaction at each point on the surface of said first part is made dependent on its orientation, providing a scalable etching procedure with a simpler apparatus.
- the method may further comprise providing a magnetic field in the vicinity of at least one said first part to cause flow of said electrolyte to adjust said reaction rate.
- the magnetic field may be adjustable.
- This provides the advantage of providing further control of the rate of electrochemical etching of the object.
- the method may further comprise surrounding at least one second part of at least one said object by at least one electrically insulating material.
- This provides the advantage of protecting the second part of the object from the etching process.
- At least one said electrically insulating material may be immiscible with the electrolyte and more dense than the electrolyte.
- At least one said electrically insulating material may comprise perfluorinated carbon fluid.
- the method may further comprise controlling said voltage.
- Said voltage may be controlled in dependence on an electrical current drawn by said electrochemical reaction.
- Said voltage may be controlled in dependence on a profile of at least part of at least one said first part.
- At least one said first part may be elongate.
- At least one said first part may be a sheet of material.
- an electrochemical etching apparatus comprising: at least one electrode; container means for accommodating at least one first part of at least one object to be etched such that at least one said first part and at least part of at least one said electrode are immersed in an electrolyte; and voltage application means for applying a voltage between at least one said object and at least one said electrode to cause an electrochemical reaction between at least one said first part and said electrolyte to cause at least one reaction product; wherein at least one said first part and at least one said electrode are positioned relative to each other such that at least part of at least one said reaction product accumulates by means of gravity on at least one said first part to reduce a reaction rate of said electrochemical reaction.
- the apparatus may further comprise magnetic field generating means for providing a magnetic field in the vicinity of at least one said first part to cause flow of said electrolyte to adjust said reaction rate.
- the magnetic field generating means may be adapted to provide an adjustable magnetic field.
- the container means may be adapted to accommodate at least one second part of at least one said object such that at least one said second part is surrounded by at least one electrically insulating material.
- the apparatus may further comprise voltage control means for controlling said voltage.
- the voltage control means may be adapted to control said voltage in dependence on an electrical current drawn by at least part of said apparatus.
- the voltage control means may be adapted to control said voltage in dependence on a profile of at least part of at least one said first part.
- FIG. 1 is a front view of an electrochemical etching apparatus embodying the present invention
- FIG. 2 is a side view of the apparatus of FIG. 1 ;
- FIG. 3 is a perspective view of the apparatus of FIG. 1 ;
- FIG. 4 is a graph showing a profile of a current drawn from the power supplying means during a process embodying the present invention
- FIG. 5 is an image, generated by a scanning electron microscope, of a probe etched according to an embodiment of the present invention.
- FIG. 6 is an image, generated by a scanning electron microscope, of an edge of a razor blade etched according to an embodiment of the present invention.
- FIGS. 1 to 3 five cylindrically-shaped pieces of tungsten wire ( 2 ) of diameter 10 mm are secured to a stainless steel block ( 12 ) using stainless steel screws ( 14 ).
- One end of an insulated wire ( 16 ) is also secured to the block ( 12 ) by means of a screw ( 14 ), while another end of the wire ( 16 ) is connected to a power supply (not shown).
- each of the pieces of tungsten wire ( 2 ) are immersed in an electrically insulating layer of C-15 perfluorinated carbon fluid ( 10 ), while the upper parts of the pieces of tungsten wire ( 2 ) protrude upwards from the fluid ( 10 ) into a layer of potassium hydroxide electrolyte ( 4 ) above.
- Positioned above the pieces of tungsten wire ( 2 ) are two U-shaped stainless steel electrodes ( 6 ) connected to the power supply and a substantially rectangular permanent magnet ( 8 ), the magnet ( 8 ) secured between the electrodes ( 6 ) by means of two plastic struts ( 18 ) adhered to both the magnet ( 8 ) and each electrode ( 6 ).
- the magnet ( 8 ) is oriented such that one of its poles points towards the pieces ( 2 ). In FIGS. 1-3 , the face of the magnet ( 8 ) nearest the pieces ( 2 ) is a pole of the magnet.
- the magnet ( 8 ), struts ( 18 ) and a part of each electrode ( 6 ) are immersed in the electrolyte ( 4 ).
- the electrodes ( 8 ) are placed at a distance of 20 mm above the ends of the pieces of tungsten wire ( 2 ).
- the fluid ( 10 ) and electrolyte ( 4 ) are contained within a glass container ( 20 ).
- the pieces of tungsten wire ( 2 ) and electrodes ( 4 ) are energised by a voltage supplied by the power supply.
- the voltage supplied by the power supply to the pieces of tungsten wire ( 2 ) and the electrodes ( 4 ) is controlled by a microcontroller and a computer program.
- the microcontroller measures a current drawn from the power supply during the etching process and the computer program adjusts a duty cycle and polarity of the voltage supplied depending on the current drawn.
- FIG. 4 An example of a profile of the current drawn from the power supply during an etching process embodying the present invention is shown in FIG. 4 .
- Each layer of the product surrounding each piece of tungsten wire ( 2 ) partially insulates the surface of the respective piece of tungsten wire ( 2 ) from the electrolyte ( 4 ), consequently reducing a rate at which the surface of that piece of tungsten wire ( 2 ) decomposes.
- each piece of tungsten wire ( 2 ) accumulates, creating a layer of product near to each piece of tungsten wire ( 2 ) which is thinner at the ends of the pieces of tungsten wire ( 2 ) closest to the electrodes ( 6 ) than at the opposite ends of the pieces of tungsten wire ( 2 ), consequently causing the rate at which each point on the surface of each piece of tungsten wire ( 2 ) decomposes to be dependent on a distance of those points from the electrodes ( 6 ).
- each piece ( 2 ) decomposes into a substantially conically-shaped piece of tungsten with a sharp point at the end of each piece of tungsten nearest the electrodes ( 6 ).
- the magnet ( 8 ) radiates a magnetic field (not shown) which interacts with ions in the electrolyte.
- the magnetic field accelerates the ions moving toward each piece of tungsten wire ( 2 ), by means of a Lorentz force, along a substantially circular path around each piece ( 2 ), creating a flow. Since the magnetic field strength decreases with distance from the magnet ( 8 ), a rate of the flow around each piece of tungsten wire ( 2 ) also decreases with that distance, the flow rate being proportional to the Lorentz force and therefore to the magnetic field strength.
- each piece of tungsten wire ( 2 ) nearest the magnet ( 8 ) causes faster circulation of the electrolyte around each piece of tungsten wire ( 2 ).
- the rate of decomposition of the surface of each piece of tungsten wire ( 2 ) is proportional to a rate of this circulation, therefore the generation of a circulation profile around each piece ( 2 ), via the presence of the magnetic field in the electrolyte, causes the decomposition of the surface of each piece of tungsten wire ( 2 ) to be well-defined and controllable in terms of the magnetic field.
- the etching process may be allowed to continue for a period of time after one or more sharp points have been formed, for the purpose of equalising the lengths and sharpnesses of the pieces of tungsten wire ( 2 ).
- the combination of the divergent magnetic field and the accumulation of the product during the reaction ensures that each piece of tungsten wire ( 2 ) experiences a rate of etching dependent on its proximity to the magnet ( 8 ), and therefore that a piece of tungsten wire ( 2 ) to be etched that is longer than another when the reaction begins, and therefore is closer to the magnet ( 8 ), is etched at a greater rate than a shorter piece of tungsten wire ( 2 ).
- the embodiment described above may be adapted for the etching of conductive sheets such as stainless steel razor blades rather than the aforementioned pieces of tungsten wire ( 2 ) by replacing the piece or pieces of tungsten wire ( 2 ) with the sheet or sheets, substituting the potassium hydroxide for 2M hydrochloric acid as the electrolyte ( 4 ) and appropriately adjusting the computer program.
- the object or objects to be etched may be made from a material other than tungsten or stainless steel. Any conductive material that can be electrochemically etched and that has a chemical by-product that flows downwards and partially insulates the object from further etching in the manner described above is suitable. Examples of such materials are nickel, copper, and silicon.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1408655.7A GB201408655D0 (en) | 2014-05-15 | 2014-05-15 | Magnetically enhanced batch electrosharpening |
| GB1408655.7 | 2014-05-15 | ||
| PCT/GB2015/051230 WO2015173541A1 (en) | 2014-05-15 | 2015-04-28 | Method and apparatus for electrochemical etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20170088972A1 US20170088972A1 (en) | 2017-03-30 |
| US10465310B2 true US10465310B2 (en) | 2019-11-05 |
Family
ID=51134928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/309,022 Expired - Fee Related US10465310B2 (en) | 2014-05-15 | 2015-04-28 | Method and apparatus for electrochemical etching |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10465310B2 (en) |
| EP (1) | EP3143186B1 (en) |
| GB (1) | GB201408655D0 (en) |
| WO (1) | WO2015173541A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201905138D0 (en) * | 2019-04-11 | 2019-05-29 | Spts Technologies Ltd | Apparatus and method for processing a substrate |
| CN110484962A (en) * | 2019-08-14 | 2019-11-22 | 东南大学 | Automation array nanometer pinpoint electrochemistry prepares platform and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2803595A (en) | 1954-09-29 | 1957-08-20 | Raytheon Mfg Co | Electropolishing magnetic articles |
| GB2220602A (en) | 1988-03-10 | 1990-01-17 | Atomic Energy Authority Uk | Method of, and apparatus for, cutting |
| US20060124472A1 (en) * | 2004-12-10 | 2006-06-15 | Ryszard Rokicki | Apparatus and method for enhancing electropolishing utilizing magnetic fields |
| US20100243430A1 (en) | 2009-03-27 | 2010-09-30 | Biing-Hwa Yan | Apparatus and method for magnetic field assisted electrochemical discharge machining |
| CN102554376A (en) | 2011-10-31 | 2012-07-11 | 北京理工大学 | Electrochemical combined machining device using variable auxiliary magnetic field |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472651B (en) * | 2012-07-27 | 2015-02-11 | Academia Sinica | Preparation method of nanoscale tip |
-
2014
- 2014-05-15 GB GBGB1408655.7A patent/GB201408655D0/en not_active Ceased
-
2015
- 2015-04-28 EP EP15723280.2A patent/EP3143186B1/en active Active
- 2015-04-28 WO PCT/GB2015/051230 patent/WO2015173541A1/en not_active Ceased
- 2015-04-28 US US15/309,022 patent/US10465310B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2803595A (en) | 1954-09-29 | 1957-08-20 | Raytheon Mfg Co | Electropolishing magnetic articles |
| GB2220602A (en) | 1988-03-10 | 1990-01-17 | Atomic Energy Authority Uk | Method of, and apparatus for, cutting |
| US20060124472A1 (en) * | 2004-12-10 | 2006-06-15 | Ryszard Rokicki | Apparatus and method for enhancing electropolishing utilizing magnetic fields |
| US20100243430A1 (en) | 2009-03-27 | 2010-09-30 | Biing-Hwa Yan | Apparatus and method for magnetic field assisted electrochemical discharge machining |
| CN102554376A (en) | 2011-10-31 | 2012-07-11 | 北京理工大学 | Electrochemical combined machining device using variable auxiliary magnetic field |
Non-Patent Citations (2)
| Title |
|---|
| "International Search Report and Written Opinion", International Application No. PCT/GB2015/051230, dated Jul. 24, 2015, 11 pages. |
| Stone, "Tungstate sharpening: A versatile method for extending the profile of ultra sharp tungsten probes", Review of Scientific Instruments, AIP, Melville, NY, US, vol. 84, No. 3, Mar. 1, 2013, pp. 35107-1-35107-5. |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3143186B1 (en) | 2019-07-31 |
| GB201408655D0 (en) | 2014-07-02 |
| EP3143186A1 (en) | 2017-03-22 |
| US20170088972A1 (en) | 2017-03-30 |
| WO2015173541A1 (en) | 2015-11-19 |
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