UA98967C2 - Method of crystallographic reorientation of single crystal body - Google Patents

Abstract

A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle.

Description

1. The method of changing the crystallographic orientation of a single crystal body, which includes: studying the crystallographic orientation of a single crystal body; calculation of the misalignment angle between the selected crystallographic direction of the single crystal body and the projection of this crystallographic direction onto the plane of the first outer main surface of the single crystal body; fixing the monocrystalline body in a position inclined to the first axis relative to the initial first outer main surface of this body; and removing material from at least a portion of said first outer major surface to change the misalignment angle. 2. A method for crystallographic reorientation of a single crystal body, which includes: studying a single crystal body by correlating the crystallographic orientation of this single crystal body with the orientation of its initial first outer main surface; fixing the monocrystalline body in a position inclined to the first axis relative to the initial first outer main surface of this body; and removing material from said initial first outer main surface to establish a modified first outer main surface that is not parallel to the original first outer main surface to change the crystallographic orientation of the single crystal body.

C. The method of claim 1, wherein the misalignment angle is greater than about 0.057 before material is removed from the first initial outer main surface. 4. The method of claim 1, wherein the angle of misalignment is less than about 0.05" after material is removed from the first initial outer main surface. 5. The method of claim 1, wherein the angle of misalignment changes by an amount of delta during material removal (A) not less than about 0.017 b. The method of claim 1 or 2 wherein the single crystal body is aluminum oxide 7. The method of claim 1, 2 or 6 wherein the single crystal body is sapphire 8. The method of item 1 or 2, in which the study of the single crystal body additionally includes comparing the selected crystallographic plane with the plane defined by the first initial outer main surface and calculating the misalignment angle.

9. The method of claim 8, wherein the single crystal body is sapphire and the selected crystallographic plane has a substantially c-plane orientation with an inclination angle of no more than about 5.0" from the c-plane.

10. The method according to item 1 or 2, in which the monocrystalline body is a sheet, part of which has substantially polygonal contours, having opposite, generally rectangular, surfaces and side surfaces that are between opposite, generally rectangular, surfaces and connect them .

11. The method of claim 10, further comprising flattening at least one side surface prior to removing material from the first outer main surface.

12. The method according to point 2, in which the fixation of the monocrystalline body in a certain position additionally includes its rotation in a plane parallel to the plane of the first outer main surface.

13. The method according to item 2, in which fixing the monocrystalline body in a certain position additionally includes tilting it about a second axis, and this second axis is an axis orthogonal to the first axis and lies in the same plane as the first axis.

14. Device for changing the crystallographic orientation of a single crystal body, which includes:

a table configured to fix the monocrystalline body in a position inclined to the first axis relative to the initial first outer main surface of the monocrystalline body, which is equipped with means for providing tilting at certain intervals about at least one axis;

an x-ray gun directed at the table and an x-ray detector positioned to detect x-rays refracted by the single crystal body; and a grinding wheel configured to rest on and contact the monocrystalline body, which is on the table, which rotates about the axis and moves in the direction of the axis.

The field of technology

The present invention generally relates to single crystal substrates and methods of final processing of such substrates.

Technical level

Semiconductor components based on single-crystal nitrides of Group Ш and Group M elements are ideal for such devices as light-emitting diodes (LEDs), laser diodes (10), displays, transistors, and detectors. In particular, semiconductor elements using nitride compounds

Groups PI and Group M are used for devices emitting light in the UV range and blue/green wavelength range. For example, gallium nitride (sam) and related materials such as AISam, Ipsam and their combinations are the most common examples of nitride semiconductor materials in high demand.

However, manufacturing ingots and substrates from certain semiconductor materials has proven difficult for many reasons. Accordingly, epitaxial growth of semiconductor materials on foreign substrate materials is considered a viable alternative. Substrates including SiC (silicon carbide), AIgOz (sapphire or corundum), and MoAl2O4 (spinel) are common foreign substrate materials.

Such foreign substrates have a different crystal lattice structure than nitride semiconductor materials, in particular itself, and therefore have a mismatch of crystal lattice parameters. Despite this inconsistency and associated problems, such as stresses and defects in the build-up layer of semiconductor materials, the industry continues to develop technologies for obtaining substrates with improved suitability for semiconductor applications. Currently, there is great interest in high-quality substrates with a large surface area, particularly sapphire substrates.

However, there remain unsolved problems in the production of high-quality substrates in large quantities.

The essence of the invention

According to the first aspect of the present invention, a method of changing the crystallographic orientation of a single crystal body is proposed, which includes the steps of studying the crystallographic orientation of the single crystal body and calculating the orientation mismatch angle between the selected crystallographic direction of the single crystal body and the projection of this crystallographic direction onto the plane of the first outer main surface of the single crystal body. The method also includes removing material from at least a portion of the first outer main surface to change the misalignment angle.

According to another aspect of the present invention, a method for crystallographic reorientation of a single crystal body is provided, which includes studying the single crystal body by correlating the crystallographic orientation of the single crystal body with the orientation of the initial first outer major surface of that body and removing material from said initial first outer major surface to establish a modified first outer major surface surface, which is not parallel to the initial first external main surface, in order to change the crystallographic orientation of this single crystal body.

According to another aspect of the present invention, there is provided an apparatus for changing the crystallographic orientation of a single crystal body, which includes a table configured to hold the single crystal body, having the ability to change the inclination at certain intervals with respect to at least one axis, an X-ray gun directed at the table, and an X-ray detector placed so as to detect X-rays refracted by a single crystal body. Such an apparatus additionally includes a grinding head configured to be placed over and in contact with the monocrystalline body located on the table; at the same time, the grinding head can rotate around the axis and move in the direction of this axis.

According to another aspect of the present invention, there is provided a system for performing operations on a monocrystalline body to remove material at an angle, which includes a monocrystalline body study module having an x-ray gun directed at a single crystal body study table, an x-ray detector positioned to detect x-rays , refracted by a single crystal body lying on a table, and a data output device configured to provide data on the crystallographic orientation of the single crystal body from the refracted X-rays on the X-ray detector. Such a system further includes a processing table having a first actuating mechanism inputted with a command signal and configured to adjust the orientation of the processing table during an angled material removal operation in accordance with the command signal. A data processing module is also provided, the input of which is connected to the output of the monocrystalline body study module, which has such a configuration to receive data from the study of a single crystal body; while the output of the data processing module is connected to the input of the first executive mechanism to provide a command signal based on a comparison between the data of the study of the single crystal body and the predetermined crystallographic orientation.

A brief description of the drawings

The present description will be better understood, and its many distinctive features and advantages will be more apparent to those skilled in the art upon reading the accompanying drawings.

In Fig. 1 presents a block diagram of the process of crystallographic reorientation of a single crystal body according to one embodiment of the present invention.

In Fig. 2 shows a block diagram of another process of crystallographic reorientation of a single crystal body according to one embodiment of the present invention.

In Fig. ZA-3O shows a perspective view of a monocrystalline body and a table suitable for a material removal process according to one embodiment of the present invention.

In Fig. 4A-4E show the orientation of a monocrystalline body on a table for an angled material removal process according to one embodiment of the present invention.

In Fig. 4E shows a cross section of a single crystal body according to one embodiment of the present invention.

In Fig. 5 is a top view showing a sapphire monocrystalline wafer having a generally c-plane orientation and a reference plane in accordance with one embodiment of the present invention.

In Fig. bA shows a perspective view of a sapphire single crystal body and specific angles of misalignment according to one embodiment of the present invention.

In Fig. 68 shows a cross-section of a sapphire monocrystalline body along the X-axis and a change in misalignment angles according to one embodiment of the present invention.

In Fig. bC shows a perspective view of a sapphire single crystal body and specific angles of misalignment according to one embodiment of the present invention.

In Fig. 60 shows a cross-section of a sapphire monocrystalline body along the Y axis and the corresponding misalignment angles according to one embodiment of the present invention.

In Fig. 7 shows a diagram of a system for performing operations to remove material at an angle from a single crystal body according to one variant of the implementation of this invention.

In Fig. 8 presents a detailed diagram of part of the system from Fig. 7 according to one embodiment of the present invention.

In Fig. 9 shows a perspective view of an apparatus for crystallographic reorientation of a single crystal body according to one embodiment of the present invention.

The use of the same designations in different figures means similar or identical positions.

Detailed description of the invention

In Fig. 1 presents a block diagram of the method of crystallographic reorientation of a single crystal body. The process begins at step 101 with the flattening of the side surface of a sheet of monocrystalline material. According to this particular process, the single crystal body is a sheet of single crystal material. The term sheet or sheet of monocrystalline material, as used herein, refers to a monocrystalline article having generally polygonal contours and, in particular, opposite, generally rectangular major surfaces. Moreover, a sheet of monocrystalline material is generally a larger piece of material from which a disk or smaller monocrystalline object can be cut. A monocrystalline body can be obtained using appropriate methods of crystal formation, such as the process of growing a profiled crystal with edge confinement and melt feeding (ECS) or the Kouropoulos method.

When specifically referring to the flattening of the side surface of the sheet, the flattening may include a material removal process. A suitable flattening process includes a grinding process, such as a coarse grinding process or a fine grinding process. According to one embodiment, the flattening of the side surface of the sheet includes a rough grinding process using a grinding wheel with a fixed abrasive and, in particular, a bonded abrasive.

In general, a single crystal body includes an inorganic material. Suitable inorganic materials can be oxides, nitrides, carbides and combinations thereof. In one particular embodiment, the monocrystalline body includes a metal oxide, such as aluminum oxide, or mixed oxides and combinations thereof. More specifically, the monocrystalline body is a sapphire body containing only alumina.

As described below, sapphire single crystal materials have several crystallographic planes and corresponding directions. When referring to specific orientations of sapphire single crystal bodies, typical planes in said sapphire body include c-plane, g-plane, n-plane, a-plane, and t-plane. Depending on the desired application of the single crystal body, certain orientations are desirable.

A sheet of monocrystalline material can have a generally polygonal shape and, in particular, generally rectangular parts, and therefore is characterized by such dimensions as length, width and thickness.

Typically, length is the largest dimension; it can be equal to or greater than the width or thickness. Sheet width is typically the second largest dimension and is typically greater than thickness. Thickness is the smallest dimension and is typically less than length and width. In general, the length of the sheet is not less than about 7.5 cm. According to other embodiments, the length of the sheet is greater, such as not less than about 25 cm or not less than about 50 cm, not less than about 75 cm or not even less than about 100 cm. In general, the length of a sheet of monocrystalline material does not exceed about 200 cm.

The width of the sheet of monocrystalline material is generally not less than about 7.5 cm. In other embodiments, sheets of greater width may be used, such as not less than about 10 cm or not less than about 15 cm or even not less than about 50 cm.

As already described, thickness is generally the smallest dimension, and a sheet of monocrystalline material typically has a thickness of at least 0.5 mm before processing. In other embodiments, thicker sheets may be used, such as sheets with a thickness of at least about 1 mm, or at least 2 mm, or even at least about 5 mm. In general, the thickness of a sheet of monocrystalline material is no more than about 20 mm.

After the flattening of the first side surface of the sheet at step 101, the opposite side surface of the sheet of monocrystalline material can also be subjected to flattening. As such, this flattening step typically involves the same processes used to flatten the first side of the sheet, and in particular the grinding process.

As can be seen from fig. 1, after flattening the side surface of the sheet in step 101, the process continues in step 103 by studying this side surface of the sheet of monocrystalline material to identify the reference plane. Study methods may include direct study methods, which involve measurements directly from the surface, or alternatively, the study process may include indirect methods, where the orientation of the crystal is determined by measurements on another surface. According to one variant of the implementation, the process of studying the side surface of the sheet can be carried out by the X-ray diffraction method. When referring to the study of the lateral surface of a sheet of single crystal material for reference plane identification, in the specific context of sapphire single crystals, reference plane identification generally includes the identification of an a-plane, a p-plane, or a t-plane. However, it should be clear that any of the previously mentioned planes can be used as a reference, depending on the desired orientation of the single crystal body.

After examining the side surface of the sheet in step 103, the process may continue to remove material from that side surface of the sheet to align that side surface of the sheet with the identified reference plane in step 105. Removal of material from the side surface of the sheet may include typical abrasive processes such as grinding, and in particular coarse grinding process or fine grinding process. According to a specific embodiment, a suitable grinding process includes the use of a fixed abrasive, such as a grinding wheel.

In addition, after identifying the reference plane, the sheet can be set at an angle so that when the material is removed, it is removed in such a way that the side surface of the sheet is aligned with the identified reference plane. Such a process is suitable for orientation of the side surface of the sheet and, if so chosen, after removal from the sheet of smaller pieces of monocrystalline material, such as a disk; such disks are correctly oriented with respect to the identified reference plane.

After removing the material from the side surface of the sheet in step 105, the process continues by removing the surface layer (so-called skin layer) from the initial first outer main surface and the initial second outer main surface of the sheet in step 107. As already described, typically the sheet may have a generally polygonal shape with opposite and generally rectangular main surfaces, which are a first outer main surface and a second outer main surface. Removal of the surface layer in step 107 may include generally abrasive processes, such as grinding processes, and in particular a fine grinding process. In general, removing the surface layer includes removing no more than about 2 mm of material from the initial first outer main surface and the initial second outer main surface. It should be understood that all of the processes described above, namely the processes of step 101, step 103, step 105, and step 107, may be performed on individual sheets of monocrystalline material or, alternatively, they may be performed on a number of sheets. In addition, such stages can be interchangeable.

After removal of the surface layer in step 107, the process continues with the study of the initial first outer main surface in step 109. In accordance with one embodiment, the study process can be carried out by diffraction methods, such as, for example, X-ray diffraction. In particular, the study of the initial first outer main surface may include the correlation of the crystallographic orientation of the single crystal body with the orientation of the initial first outer main surface. That is, the general orientation of specific crystallographic planes and directions of a single crystal body can be compared with the orientation of the initial first outer main surface. At the end of such a study, one or more selected crystallographic planes are typically identified and compared to the 3-plane defined by the first initial outer principal surface. When doing this, one or more corners of inconsistent orientation are identified. The term "misalignment angle" as used here,

is defined as the angle between the direction normal to the selected crystallographic plane within the single crystal body and the selected projection of the corresponding crystallographic direction on the surface of the first outer main surface and the second outer main surface.

In the further description of the crystallographic orientation of a single crystal body, the term "tilt angle" is also used. As such, the tilt angle is a specific term that describes the angle formed between a vector normal to the surface of a single crystal body and a direction normal to a chosen crystallographic plane that describes the general orientation of that single crystal body.

For example, in the specific context of a sapphire single crystal, the first outer main surface of the single crystal body may have a generally c-plane orientation. Accordingly, the tilt angle describes only the relationship between the vector normal to the crystallographic c-plane and the vector normal to the surface of the single crystal body. Typically, such a c-plane orientation is not exactly coplanar with the first outer major face of the single crystal body, and typically the c-plane is oriented in such a way that it is inclined to another crystallographic plane (e.g., t-plane, a-plane) . In fact, c-plane orientation may include manufactured or intentional tilting of the generally planar surface away from the c-plane in various directions. For clarity, the tilt angle is only a measurement using the vector normal to the surface of the single crystal body, while the misalignment angle can describe the angle between the projection (ie, perpendicular to the plane or within the plane) of the single crystal body and the direction normal to any from numerous selected crystallographic directions. As such, the misorientation angle and the tilt angle may be the same angle when referring to a chosen crystallographic plane that describes the general orientation of the single crystal body.

In accordance with one particular embodiment, the single crystal body is a sapphire single crystal body having a generally c-plane orientation tilted away from the c-plane at an angle of inclination that does not exceed about 5.0". In other embodiments, a sapphire single crystal may be used, having a c-plane orientation deviated from the c-plane at a tilt angle of no greater than about 3.07, such as no greater than about 2.0" or even no greater than about 1.0". Typically, the tilt angle is not less than about 0.027 or not less than 0.05". Moreover, it should be noted that for certain applications a certain degree of tilt angle is desirable, i.e. such that the c-plane is deliberately not coplanar with the first outer main surface of the monocrystalline body.

After examining the initial first outer main surface in step 109, the process continues in step 111 by removing material from the specified initial first outer main surface to establish a modified first outer main surface. Characteristically, the plane established by the modified first outer main surface is not parallel to the plane defined by the original first outer main surface.

Therefore, the process of removing material in step 111 may include removing material from the initial first outer main surface at an angle. That is, the surface of the monocrystalline body is tilted or placed at an angle during the material removal process. This process contributes to the crystallographic reorientation of the single-crystal body, as well as the new determination of the angles of non-coordinated orientation.

According to one embodiment of the present invention, the material removal process can be carried out as a grinding process, in particular an angle grinding process. In one particular embodiment, and as will be shown in further embodiments, during the grinding process, the monocrystalline body can be fixed in an inclined position along one or more axes relative to the grinding surface to perform an angle grinding operation. Alternatively, the grinding surface may be inclined along one or more axes relative to the surface of the single crystal body.

During the material removal operation at an angle, the direction normal to the initial first outer main surface of the monocrystalline body may define the first axis, and the direction normal to the grinding surface may define the second axis. The angle between the first axis and the second axis also determines the angle between the initial first outer main surface and the grinding surface during the material removal operation. As such, since the initial first outer main surface is angled to the grinding surface, the first axis and the second axis are at an angle to each other and are therefore not coaxial. Typically, the angle between these axes does not exceed about 30", and more typically it does not exceed about 15". In other embodiments, a smaller angle is used during grinding, such as no greater than about 10", or no greater than about 57", or even no greater than about 17".

For clarity, abrasives can generally be classified as free abrasives and fixed or bonded abrasives. Free abrasives generally consist of abrasive grains or small particles in the form of a powder or in the form of a suspension in a liquid medium. Fixed abrasives generally differ from free abrasives in that the abrasive particles are in a matrix of material that fixes their position relative to each other. Fixed abrasives generally include bonded abrasives and coated abrasives. An example of a coated abrasive is sandpaper; coated abrasives are typically flat sheets (or some geometric modification of flat sheets with the formation of strips, cloths, etc.), the basis of which is a flexible substrate on which abrasive particles of different sizes and coatings are applied. On the other hand, bonded abrasives are generally not applied to such a substrate. In this case, the abrasive particles are fixed in position relative to each other due to the matrix of the binding material in which these particles are distributed. Such bonded abrasive components are generally formed and subjected to heat treatment at the vulcanization temperature of the binder matrix (typically above 750 C), at which the binder matrix softens, flows and moistens the abrasive particles, after which they are cooled. Various three-dimensional shapes can be used, such as circular, conical, cylindrical, truncated cone and various polygonal shapes, which can be formed as grinding wheels, grinding blocks, drill bits, etc. The specific grinding processes described here use fixed abrasive components in the form of bonded abrasives.

In accordance with one embodiment, the material removal process includes a rough grinding process. In general, in the rough grinding process, a fixed coarse abrasive may be used, which includes coarse abrasive grains and a matrix of binding material. The coarse abrasive grains may be conventional abrasive grains such as crystalline materials or ceramic materials, including alumina, silica, silicon carbide, zirconium corundum, and the like.

Additionally or alternatively, coarse abrasive grains may include superabrasive grains, including diamond, boron nitride, and mixtures thereof. In certain variants of implementation, it is envisaged to use superabrasive grains. In embodiments where superabrasive grains are used, non-superabrasive ceramic materials such as those mentioned above can be used as a filler.

In further references to a coarse abrasive, the coarse abrasive grains may have an average particle size of no greater than about 300 microns, such as no greater than about 200 microns, or even no greater than about 100 microns. In accordance with one particular embodiment, the average particle size of the coarse abrasive grains is in the range of about 2.0 microns to about 300 microns, such as in the range of about 10 microns to 200 microns, and more specifically in the range of about 10 microns to 100 microns . Typical coarse grains have an average particle size ranging from about 25 microns to 75 microns.

As already described, coarse abrasive includes a matrix of binding material. In general, organic or inorganic material can be used for the matrix. Suitable organic materials may include materials such as resins. Suitable inorganic materials may include ceramics, glass, metals or metal alloys. Suitable ceramic materials generally include oxide, carbides and nitrides. Particularly suitable glass materials may include oxides. Suitable metals include iron, aluminum, titanium, bronze, nickel, silver, zirconium, their alloys, etc. In one embodiment, the coarse abrasive comprises no more than about 90 vol. 95 of binding material, for example no more than about 85 vol. 95 binding material. Typically, the coarse abrasive includes not less than about 30 06.95 of binder material or even not less than about 40 vol. 95 binding material. In one particular embodiment, the coarse abrasive includes an amount of binding material ranging from about 40 06.95 to 90 06.95. Examples of specific abrasive wheels include those described in US Patent Nos. 6,102,789, 6,093,092 and 6,019,668, incorporated herein by reference.

In general, the process of rough grinding involves placing a rough single crystal body on a holder and rotating the single crystal body relative to a rough abrasive surface. In one particular embodiment, the grinding wheel may have an abrasive rim around the periphery.

The monocrystalline body can rotate with respect to the grinding wheel, and such rotation can be carried out in the same direction as the rotation of the grinding wheel, or in the opposite direction, and grinding occurs due to the displacement of the axes of rotation. According to one embodiment, the grinding process includes rotating the abrasive wheel at a speed greater than about 2000 revolutions per minute (rpm), such as greater than about 3000 rpm, say in the range of 3000 to 6000 rpm ./min. Typically, this uses a liquid coolant selected from aqueous or organic coolants.

In one particular embodiment, a coarse abrasive surface with self-sharpening properties is used. Unlike many conventional fixed abrasives, a self-sharpening abrasive generally requires no adjustment or additional conditioning during use and is therefore particularly suitable for precise, stable grinding. Due to the provision of self-sharpening properties, the binder matrix may have a special composition, porosity, and grain concentration to achieve the desired fracture of the binder matrix when wear edges develop in the abrasive grains. That is, the matrix of such a binding material breaks when wear edges develop due to increased load on the matrix. It is desirable that matrix fractures lead to the loss of worn abrasive grains and expose fresh grains and their associated cutting edges. In particular, the matrix of the binding material with the self-sharpening property of coarse abrasive can have a fracture resistance of not less than approximately 6.0 Mpa-m'?,

for example not less than about 5.0 MPa-m'?, or preferably in the range of about 1.0 MPa-m'!? to 3.0 MPa-m'-.

In general, a coarse abrasive with the property of self-sharpening partially replaces the binding material with pores, typically interconnected pores. Accordingly, the actual content of the binding material is reduced relative to the above values. In one particular embodiment, the coarse abrasive has a porosity of no less than about 20 vol. 95, for example not less than approx

ZO ob.95, with a typical range from about 30 06.95 to about 80 ob.95, for example from about 30 ob. 95 to about 70 rev.95. According to one embodiment, the coarse abrasive has a porosity of at least about 20 vol. 95, such as not less than about 30 vol. 95, with a typical range of about 30 06.95 to about 80 rev. 95, for example from approx

ZO vol. 96 to about 70 rev. 95. According to one embodiment, the coarse abrasive has a porosity of about 50 vol. 95 to about 70 rev. 95. It should be understood that the pores may be open or closed and that in coarse abrasives having a higher percentage of porosity, the pores are generally open, interconnected. The pore size may generally range from about 25 microns to about 500 microns, such as from about 150 microns to about 500 microns.

The previous pore numbers and those given here are determined by the various pretreatment or pregrinding components.

According to one embodiment, the content of coarse abrasive grain is limited in order to further improve the self-sharpening ability. For example, a coarse abrasive contains no more than about 50 vol. 95, no more than about 40 vol. 95, no more than about 30 vol. 95, no more than about 20 vol. 95 or even no more than about 10 vol. 95 coarse abrasive grains. In one particular embodiment, the coarse abrasive includes not less than about 0.5 06.95 and not more than about 25 06.95 coarse abrasive grains, for example ranging from about 1.0 vol. 95 to no more than about 15 rev. 95 coarse abrasive grains, or better in the range of about 2.0 vol. 95 to no more than about 10 rev. 95 coarse abrasive grains.

During the angled material removal process used for crystallographic reorientation, a total of not less than about 200 microns of material is removed from the first outer major surface to establish the modified first outer major surface.

In other embodiments, a larger amount of material may be removed depending on the desired orientation, such as not less than about 300 microns or not less than about 400 microns of material. Typically, the amount of material that is removed to install the modified first outer base surface does not exceed about 700 microns. Since the angled material removal process can remove different amounts of material from different parts of the surface, it should be understood that when referring to the amount of material removed, the figures given represent the largest amount of material removed from any part of the surface of the monocrystalline body.

After completing the process of removing material at an angle to install the modified first outer main surface in step 111, the process continues in step 113 by examining the initial second outer main surface. As already described, in general, the initial second outer main surface has the opposite main plane or surface of the first outer main surface. The study of the initial second outer main surface can be carried out in accordance with the process described above in relation to the study of the initial first outer main surface. Alternatively, the study of the initial second outer major surface can be an optional process where the crystallographic orientation of the single crystal body is known from the study of the initial first outer major surface and the misalignment angle can be calculated and adjusted based on the first study.

Accordingly, after optionally examining the initial second outer main surface in step 113, the process continues in step 115 by removing material from said initial second outer main surface to establish a modified second outer main surface.

It should be understood that the removal of material from the original second outer main surface to install the modified second outer main surface may involve the same processes as described above for step 111. Typically, the single crystal body may be at an angle to the grinding surface such that that material is removed at an angle from the original second outer main surface to establish a modified second outer main surface, thereby providing a crystallographic reorientation of the single crystal body and a change in the misalignment angle.

With specific reference to the misalignment angles, generally prior to material removal from the initial first and initial second outer major surfaces, the misalignment angles are generally greater than about 0.05". According to one embodiment, the misalignment angles are greater prior to the material removal process. , such as greater than about 0.17, or greater than about 0.2", or even greater than about 0.37. However, after performing a material removal process to establish modified surfaces and provide crystallographic reorientation, the misorientation angle can be reduced so that the misorientation will not generally exceed about 0.057. In other embodiments, the misalignment angles may be smaller after material removal, such as not exceeding about 0.047, not exceeding about 0.037, or even not exceeding about 0.027.

As such, removal of material to establish the modified first outer main surface and the modified second outer main surface generally changes one or more misalignment angles by an amount of delta (D) that is no less than about 0.017. In other embodiments, it is possible to vary the misalignment angle by a larger delta value, such as not less than about 0.05", or not less than about 0.1", or not less than about 0.27, or even not less than about 0.57. In general, the change in one or more misalignment angles does not exceed about 10", and more specifically does not exceed about 57".

From Fig. 1, it can be seen that after material has been removed from both major surfaces of the sheet, the process continues at step 117 by cutting the sheet to remove the disk. In general, the disc removal process may include a cutting process. In particular, the cutting process may use abrasive water jet treatment to remove one or more discs from a larger sheet.

Alternatively, in another embodiment, the core removal operation may include a column drilling operation in which ultrasound is used. It should be understood that the indicated disc removed from 3 sheets of single crystal material will have the same crystallographic orientation as the machined sheet.

One or more disks can be removed from a larger sheet of monocrystalline material.

In general, a disc is a single crystalline article having a substantially circular outer periphery and a first major surface and a second major surface with side surfaces located between and connecting the first major surface and the second major surface. It should be understood that such disks can form plates, that is, the disk can be a single plate or, alternatively, the disk can be subjected to further processing to obtain a certain number of plates.

It should be understood that before removing the discs or after removing the discs, the single crystal bodies that remain can be further processed to obtain articles suitable for use. Typically, further processing may include additional grinding processes, such as a fine grinding operation, a lapping operation or a polishing operation. During such a fine grinding operation, scratches formed during a previous coarse grinding operation, such as an angled material removal operation, are removed. As such, the fine grinding operation removes no more than approximately 200 microns of material. Other fine grinding operations may remove less, such as no more than about 100 microns, or no more than about 50 microns, or even no more than about 25 microns. In general, however, a fine grinding operation removes no less than about 10 microns of material.

Typically, after such finishing operations, monocrystalline bodies can also be subjected to the process of removing residual stress. Such processes may include etching or annealing. Furthermore, further processing such as polishing may be provided to ensure correct geometry. Typically, such polishing operations involve the use of a free abrasive, such as a chemical mechanical polishing (CMP) process.

The block diagram presented in Fig. 2 illustrates another process of obtaining a crystallographically reoriented single crystal body. In particular, in Fig. 2 presents a process aimed at the crystallographic reorientation of disks of single crystal material, which can later be converted into one or more plates, in contrast to the process of FIG. 1, which is aimed at crystallographic reorientation of a sheet of monocrystalline material from which discs can then be cut. Accordingly, the processing steps are generally the same, except that discs are cut from monocrystalline sheets at an early stage of the process and each of these discs is individually subjected to a material removal operation. As can be seen in Fig. 2, steps 201, 203, 2051 207 are the same steps that were carried out in fig. 1. Accordingly, after initially flattening the sheet, studying the sides of the sheet, removing material from the sides of the sheet to align the sides of the sheet with the reference plane, and removing the surface layer from the sheet of monocrystalline material, discs may be cut at step 209. After removing the disc at step 209 processes continue in the same way as it was described in relation to Fig. 1. As such, steps 211-217 are the same, except that they are performed not on sheets, but on disks.

With specific reference to disc geometry, it generally has a substantially circular outer periphery.

Moreover, the disk generally has a diameter of no less than about 7.5 cm. According to another embodiment, the diameter of the disk may be larger, for example no less than about 8 cm, or 9 cm, or even no less than about 10 cm. Typically, the disc diameter does not exceed approx

ZO see

In general, the thickness of the disk does not exceed about 10 mm before the material is removed. In other embodiments, discs with a thinner profile can be used, the thickness of which does not exceed about 5 mm, or does not exceed about 2.5 mm, or even does not exceed 0.5 mm before removing material from both major outer surfaces.

In Fig. ZA-30 presents a perspective view of a monocrystalline disc that is subject to material removal processing. Disc 301 in Fig. ZA is on table 303, which includes a certain number of parts. In particular, the table 303 includes a part 305 that is capable of rotating, ensuring rotation of the disc during the material removal operation. The table 303 also includes a first part for tilting 307, which is able to tilt the disk 301 lying on it, around the axis 311. Characteristically, the axes 308 and 311 are orthogonal axes that lie in directions parallel to the plane of the disk. This design allows the disk 301 to be tilted to selectively remove material over a large number of angles when rotated 360". In particular, the tilting parts 307 and 309 have the ability to provide tilting in a certain interval, so that each tilting interval does not exceed about 0.025 degrees, and more typically does not exceed about 0.02 degrees Other tables may provide greater precision such that each tilt interval will not exceed 0.01 degrees.

In Fig. 3 shows a perspective view of the disk 301 on the table 303 in relation to the grinding apparatus 315. As can be seen, after tilting the disk to a selected angle, material can be removed from the initial first outer main surface of the disk 301. As already described, one such process for removing material there is a grinding process, for which the grinding device 315 comes into contact with the disk 301. Characteristically, in addition to the rotation of the grinding device 315, the possibility of rotation of the table 303 and the disk 301 is provided. In accordance with one variant of implementation, the grinding device 315 and the table 303 rotate in opposite directions directions In addition to the rotational movement, the table has the ability to move in the direction of the axis 317, or rather the table 303 and the disk 301 can move forward and backward along the axis 317.

In Fig. ZS disc 301 is shown inverted to represent the initial second outer main surface. After removing material from the initial first outer major surface of the disc 301 to install its modified first outer major surface, the disc 301 may be inverted on the table 303 to begin removing material from the initial second outer major surface of the disc 301. It should be understood that after forming the modified first outer major surface of the outer main surface, this surface is set at an angle and oriented accordingly so that after turning over the disk 301 it is possible to remove the material on the initial second outer main surface without another step of study.

As can be seen in Fig. 30, after turning the disk 301, its initial second outer main surface becomes available for the material removal process. As shown and in accordance with one embodiment, such a material removal process again involves a grinding operation.

However, as shown, since the initial first outer main surface of the disc 301 has been modified as described above and the orientation of the disc 301 has been changed with respect to the modified first outer main surface, after grinding the initial second outer main surface, the disc 301 may not need to be tilted. During this operation, the initial second outer main surface is subjected to a grinding operation to modify the crystallographic orientation of the initial second outer main surface and bring it substantially parallel to the plane defined by the modified first outer main surface.

In Fig. 4A-4E show an alternative material removal operation. Yes, Fig. 4A is a top view of a monocrystalline body resting on a table 402 having a rotatable portion 403 and a tilting means 405 that can tilt the table 402 about an axis 406. Accordingly, after examining the monocrystalline body 401 from the side of the first initial outer main surface and determining the misalignment angle, the single crystal body 401 can be mounted and oriented on the table 402.

As shown in Fig. 4A, the first step in the material removal step includes rotating the single crystal body 401 on the table 401 using the rotary part 403 until the single crystal body 401 reaches the desired orientation with respect to the tilt axis 406.

In Fig. 4AB is a side view of a single crystal body 401 on a table 402. After rotating the single crystal body 401 on a table 401, the single crystal body 401 can be further oriented for the material removal process at an angle by tilting means 405. As shown, the single crystal body 401 can be tilted about an axis slope 406, which, as shown in Fig. 4B, is perpendicular to the direction 7 and coaxial with the direction X. The inclination of the single crystal body 401 places it at an angle such that the direction 407, which is normal to the plane defined by the initial first outer main surface, is not coaxial with the direction 7, which the process of removing material at an angle and changing the crystallographic orientation of the single crystal body 401 in relation to the surface of the single crystal body 401 is provided.

In Fig. 4C shows a side view of the monocrystalline body 401 on the table 402 after it has been subjected to the material removal process. It is characteristic that after the orientation of the single crystal body 401 by appropriate rotation and tilt, the process of material removal can be immediately started. As shown in Fig. 4C, the grinding process is carried out in such a way that the original first outer main surface is removed at an angle with respect to the plane defined by the initial first outer main surface, thereby establishing the modified first outer main surface 408. Accordingly, the single crystal body 401 will be shaped such that a portion of this body will have a different thickness in cross-section than other parts of it.

In Fig. 4E shows a side view of the monocrystalline body 401 on the table 402. Characteristically, after removing the material to install the modified first outer main surface 408, the table 402 can be returned to its original position without tilting. In this position, the monocrystalline body 401 can be flipped so that the modified first outer main surface 408 contacts the table 402 and the opposite main surface, which is the original second outer main surface 409, becomes available for the material removal process. The appropriate crystallographic orientation of the single crystal body 401 with respect to the initial second outer major surface may not require a study process or a tilting process in this particular embodiment because the first outer major surface has been modified and the desired crystallographic reorientation has been initiated with respect to the first surface.

In Fig. 4E shows a side view of the monocrystalline body 401 on the table 402 after the angled material removal process has been performed. As can be seen, the original second outer main surface has been removed and a modified second outer main surface 410 has been formed. This modified second outer main surface 410 defines a plane that is parallel to the plane defined by the modified first outer main surface 408.

In Fig. 4E shows a cross section of a single crystal body 401 after treatment of both major surfaces for crystallographic reorientation. The monocrystalline body 401 shown has a modified first outer main surface 408, a modified second outer main surface 410, and side surfaces 412 and 413 at an angle. It should be understood that due to material removal processes at an angle on the main surfaces, the side surfaces 412 and 413 may exhibit an angle that gives the monocrystalline body a parallelogram type cross-sectional shape. According to one embodiment, after forming the modified first and second outer main surfaces 408 and 410, the side surfaces 412 and 413 of the single crystal body 401 may be subjected to a material removal process, such as a grinding process, to make these surfaces perpendicular to the main surfaces. As shown in Fig. 4E, the shaded portions show the volume that is typically removed from the lateral surfaces during such a process.

With specific reference to the types of single crystal materials, in accordance with one embodiment, a suitable single crystal body for crystallographic reorientation may include a sapphire single crystal. As such, Fig. 5 illustrates a top view of the sapphire monocrystalline body 501. Characteristically, the monocrystalline body 501 is disc-shaped, or more precisely, a plate suitable for forming electronic devices on it. Although it is clear that sapphire single crystal bodies can have different orientations, such as a-plane orientation, g-plane orientation, t-plane orientation, or c-plane orientation, presented in FIG. 5 embodiment shows a single crystal sapphire plate having a generally c-plane orientation, since the upper surface 502 of the single crystal body 501 is defined mainly by the crystallographic c-plane. As can also be seen, the single crystal body 501 includes a reference plane 503, which corresponds to the crystallographic c-plane of the sapphire crystal and may also correspond to another plane in addition to the c-plane, such as a-plane, t-plane or g-plane.

For greater clarity, Fig. бА-60О, which show the sapphire single-crystal body and the angles of mismatched orientation (ба, Ус and бт) relative to specific crystallographic planes in the single-crystal body, as well as the directions (or projections) corresponding to these planes on the surface of the single-crystal body. In particular, Fig. bA shows a perspective view of a single crystal body 601 having a first set of axes representing three directions (x, y, and 7) corresponding to the projections of the crystallographic directions a, t, and 7, respectively, within the initial first outer major surface 603 of the single crystal body 601. Additionally, Fig. bA includes a second set of axes representing three directions (a, t, and c) that correspond to crystallographic directions (ie, directions normal to the correspondingly labeled crystallographic planes) within the single crystal body 601. In FIG. Also shown in bA are the misalignment angles 605, 607, and 609, which correspond to the difference between the axes representing the three directions (X, y, and γ) and the axes representing the three crystallographic directions (a, t, and c). More specifically, misalignment angles 605, 607, and 609 represent the misalignment between the projections on the initial first outer main surface 603 and the corresponding crystallographic directions in the single crystal body 601.

In Fig. 6B shows a cross-section of the monocrystalline body 601, viewed along the x-axis.

In particular, Fig. 6B shows misalignment angles 605 (which is also a tilt angle) and 607 between the 7 and y directions, respectively. In accordance with the embodiments described herein, the monocrystalline body may be subjected to a material removal process to change the original first outer main surface 603 to a modified first outer main surface 611 that is not parallel to the original first outer main surface 603. As previously described, the removal process material may include a grinding process and may include tilting the initial first outer main surface of the single crystal body 601 relative to the grinding surface. In order to change the crystallographic orientation of the single crystal body and, in particular, to change the misalignment angles 605 and 607 associated with the c-plane and the t-plane, respectively, material is removed from the single crystal body 601 to establish a modified first outer major surface 611 .For purposes of clarity and illustration, the triangular-shaped portions 612 and 613 show the material removal process at an angle, and in particular, the portions 612 and 613 are removed so that the original first outer base surface 603 is removed to install a modified first outer base surface 611 that does not is parallel to the initial first outer main surface 603.

After removing the material and forming the modified first outer main surface 611, the c-plane and the t-plane are reoriented with respect to the modified first outer main surface 611 and, therefore, the degree of misalignment with respect to the t-plane and the c-plane may change.

As can be seen from Fig. 6C, after the formation of the modified first outer main surface 611, the axis direction of the t-plane shares the same vector. As such, the same process can be carried out so that the angle of misalignment with respect to the direction of the x-axis and the a-plane can be changed.

In Fig. 60 shows a cross-section of a single-crystal body 601, viewed along the y-axis. On

Fig. 60 shows misalignment angles 605 and 609 between the 7-axis and the x-axis, respectively. The previous reorientation that formed the modified first outer main surface 611 with respect to the y-axis and the normal direction of the t-plane effectively re-defined the original first outer main surface for the sapphire single crystal body 601. As such, the sapphire single crystal body 601 can be subjected to a second removal process material for crystallographic reorientation and changing the angles of mismatched orientation 605 and 609 by studying and processing the surface of a single crystal body along the x axis. As shown, the sapphire single crystal body may be subjected to a material removal process such as grinding where the modified first outer main surface 611 is inclined with respect to the grinding surface so that the modified second outer main surface 612 is defined with respect to the x-axis. During such a grinding process, the triangular-shaped areas 612 and 613 are removed, so that the c-plane and a-plane are reoriented with respect to the modified second outer main surface 612 and, therefore, the degree of misalignment with respect to the a-plane changes. It should be understood that although the grinding process has been described as a multi-step process relative to a single grinding process for each of the two different orthogonal directions (ie, the y-axis and the x-axis), this grinding process may be modified as described herein in various embodiments to implement changes in crystallographic orientation in several directions within a single grinding process.

In Fig. 7 presents a system for performing material removal operations at an angle. In Fig. 7 shows the learning module 701, the output of which is connected to the input of the data processing module 703. The data processing module also includes a first output connected to the input of the first processing table 705 and a second output connected to the input of the second processing table 711.

In general, the study module 701 includes an X-ray gun and an X-ray detector oriented around a single crystal body study table. After studying a single crystal body, the study module generates data 707 for that single crystal body and can provide single crystal body study data 707 to the data processing module 703. The study data 707 typically includes crystal orientation data. In accordance with one variant of the implementation, the study data 707 may include data that relates the physical orientation of the single crystal body, as determined by its external surfaces, with the crystallographic orientation. In one particular embodiment, the study data 707 of the single crystal body includes information regarding the identification of a reference plane in the single crystal body. In another embodiment, the study data 707 of the single crystal body may include information regarding the misalignment angles with respect to the initial main first outer surface of the single crystal body.

The data processing module 703 receives the study data 707 of the monocrystalline body and generates a command signal to control the material removal operation at an angle at the selected processing stage. Since this system can perform various angled material removal operations, such as, for example, an angled material removal operation to form a reference plane or an angled material removal operation to change the misaligned orientation angles on the initial first outer main surface, the data processing module 703 can be used to generate various command signals. Such command signals may then be applied to appropriate processing desks (eg, 705 or 711) to perform the appropriate operation.

For example, in one embodiment, the data processing module 703 receives study data 707 from the single crystal body study module 701 and processes this study data 707 to generate a command signal that represents the error between the current orientation of the single crystal body and the desired orientation based on the predetermined crystallographic orientation. The command signal is applied to the processing table and regulates its orientation. In one particular embodiment, the command signal 709 includes data that refers to the first processing table 705, which is suitable for performing a process of removing material at an angle on the first outer main surface of the monocrystalline body in order to change at least one angle of misalignment.

Alternatively, in another embodiment, the data processing module 703 provides a command signal 713 to the second processing table 711, which includes data necessary to perform an angled material removal operation on the side surface of the monocrystalline body to define a reference plane or "flat". Characteristically, such processes are different and may require different machining tables, as well as different command signals, since in one operation the first outer main surface of the monocrystalline body is machined, while in another operation the side surfaces of this monocrystalline body are machined.

In general, the processing of study data 707 by the data processing module 703 may be performed using computer hardware, software, or software.

For example, the data processing module may include a user-programmable gate matrix (PGA), a specialized integrated circuit (ASIC), computer-controlled software, or a combination thereof.

In Fig. 8 shows in more detail the position 715 of Fig. 7 is a diagram of the data processing module 803 and shows the processing table 809 with the monocrystalline body 813. The data processing module 803 contains a memory 805, the input of which is connected to the output of the monocrystalline body study module for obtaining study data 801, and the output is connected with the data processor 807. The memory 805 can store instructions for the data processor 807 and call them after receiving the study data 801, so that the data processor 807 can process the monocrystalline body study data and generate a command signal 815 that is fed to the processing table 809. How already described, the study data 801 may include different types of data depending on the desired process and accordingly the memory 805 and the data processor 807 may include several programs and algorithms to appropriately change the study data 801 via the command signal 815.

As can be seen, the processing table 809 includes an actuator 811, the input of which is connected to the data processor 807 to receive a command signal 815. After receiving the command signal 815, the actuator 811 adjusts the orientation of the processing table 809 and the monocrystalline body 813 located on it, relative to the grinding surface 817 based on the command signal 815. In accordance with one embodiment, the actuator 811 can control the inclination of the machining table 809 about a first axis located in a plane defined by the main surface of the machining table 809. In accordance with another embodiment, processing table 809 includes more than one actuator to control movement of processing table 809 in multiple directions. In one embodiment, another actuator is used to control the tilt of the processing table 809 about a second axis that is generally orthogonal to the first axis and lies in the same plane. In accordance with another embodiment, the processing table 809 may include another executive mechanism that receives a command signal from the data processor 807 and may rotate the processing table 809 in the plane of its main surface.

It should be understood that multiple command signals may refer to multiple actuators to control movement of the processing table in different directions. As such, data processor 803 and processing table 809 may include additional or intermediate components such as multiplexers and digital logic circuits other than those shown. Moreover, while such embodiments have demonstrated changing the angle of the grinding table 809 relative to the grinding surface 817, such controls may be used to change the angle of the grinding surface 817 relative to the grinding table 809 or, alternatively, such controls may be used to control both the grinding surface and the grinding table 809 .

In Fig. 9 shows in perspective the apparatus for changing the crystallographic orientation of a single crystal body. Fig. 9 includes a monocrystalline body 901 on a table 903, an X-ray gun 905 placed above the table 903 and aimed at the monocrystalline body 901. It should be understood that this table has the ability to tilt at certain intervals and is suitable for carrying out the material removal process at an angle.

The apparatus also includes a corresponding detector 907 positioned to detect the X-rays generated by the gun 905 and refracted by the single crystal body 901. The apparatus is equipped with a grinding surface 909, such as a grinding wheel, placed above the single crystal body 901 and a table 903 that comes into contact with the single crystal body during the grinding operation. Such an apparatus provides the implementation of a combination of processes, such as the study of a single crystal body 901 and the removal of material for its crystallographic reorientation. Moreover, presented in Fig. 9, the apparatus provides improved control over the reorientation process, since the single crystal body can be studied before, during, and even after the angled material removal operation.

EXAMPLE

Table 1 shows data for 21 samples obtained according to the following processing method. Twenty-one single-crystal sapphire discs were cut from several larger single-crystal sapphire sheets grown using the edge-confined melt-fed profile crystal growth (ECP) technique. Each of the grown single crystal sheets had an orientation mismatch of approximately 0.5 degrees from the selected crystallographic orientation; typically this was the c-plane orientation. Each of the sheets was first visually inspected for defects, examined under polarized light, after which they were studied using X-ray research methods. After that, a map was drawn on each sheet and marked for cutting and removing single crystal sapphire discs. In total, 4 single crystal disks were removed from each single crystal sheet.

After that, each monocrystalline disc was inspected and ground to a diameter of about 2 inches.

Each single crystal disc was cleaned and studied using X-ray diffraction to determine the orientation of a specific reference plane that would correspond to the base plane. After the identification of the selected reference plane, for example, the α-plane, a base was formed on each of the sapphire single-crystal discs using a surface grinding machine.

After the formation of the base, the monocrystalline disc was mounted on a flat plate with the help of wax and cleaned by grinding the first outer main surface. After cleaning, the single crystal disk was studied using X-ray diffraction and the orientation of the first outer main surface was calculated relative to the predetermined crystallographic orientation. After that, the single crystal disc was fixed on the sine plate and the orientation of the single crystal disc in relation to the grinding surface was adjusted so that the single crystal disc was placed at an angle to the grinding surface. The angle grinding operation of each of the samples listed below lasted from about 30 minutes to about 2 hours, depending on the correction required.

After the angle grinding operation, the first outer main surface of each of the monocrystalline disks was studied using X-ray diffraction. During the study, certain angles of mismatched orientation of single-crystal disks were measured and recorded. If necessary, the monocrystalline discs were again subjected to angle grinding operations for further correction. After processing the first outer main surface, the discs were turned over and the second outer main surface was corrected using the same process as on the first outer main surface.

After adjusting the orientation of the second outer main surface, each of the samples was ground on both sides and cleaned. The side surfaces of each of the monocrystalline discs were ground, and the discs were again cleaned, annealed, polished, cleaned and retested.

Table 1 time: . A-axis (degrees) M-axis (degrees) (degrees) (degrees) y y x PO PO s POLYA POL Tk PO PO Z Z 77772... 006 1... 004 | (ОВ | из 77773... 009 2 yush| 003 | 009 | -0.02 ЖНЧБ 7771774. 009 1 002 | 01 | -008 2 жШ(( 771776. 0021777 salts 7711102 77711102 72877117 1717.1707771007710777100777107771007 01177711 -89.2Y 777798. .605 17777003 | Sh004 |.. 0082 Yuyuzhk 22111111 71111омв 1771111 с005.7. | ов 1777-0062 oo Vymoai// | 77777777777771777771717171717171717171111Ї7111ко2 | -yut

Table 1 shows data for 21 samples obtained in accordance with the above-described method.

Each of the sapphire samples has a generally c-plane orientation. The angles of misalignment relative to the a-axis and t-axis, which correspond to the crystallographic planes in sapphire single-crystal discs, are defined and given above. It is noteworthy that the average angles of misalignment for 21 samples relative to the a-axis and t-axis are small (less than approximately 0.05 degrees). At the same time, the initial orientation of single crystal sheets was 0.5 degrees in the selected crystallographic direction. After the grinding operation, the misalignment angles relative to the a-axis and t-axis had average values of -0.04 degrees and 0.01 degrees, respectively, indicating crystallographic reorientation. In addition, the total angle for the 21 samples had an average value of 0.1, confirming a close crystallographic orientation closer than -0.5 degrees. In addition, the total angle of misalignment of each of the monocrystalline discs when comparing wafer to wafer is reduced, as the standard deviation for the 21 samples is 0.05 degrees. The maximum and minimum values in relation to the measured angles also testify to the reduction of misalignment.

The described embodiments of the present invention provide significant advantages. The proposed methods of studying a single crystal body, processes and methods of orientation, as well as specific grinding processes and articles in combination provide crystallographic reorientation of single crystal bodies. Moreover, this combination of methods is scalable, as certain of the described processes are suitable for processing large sheets of single crystal material. On the other hand, certain combinations of processes are suitable for processing individual discs or wafers of monocrystalline materials. In particular, certain implementation options provide crystallographic reorientation of single crystal bodies after growth, which is especially desirable for reducing waste and improving the quality of products based on them. Moreover, the processes proposed here provide manufacturers with flexibility, as monocrystalline bodies can be designed and adjusted to the end user's technical requirements for specific applications already after the monocrystalline article has been grown.

The above description should be considered illustrative and not restrictive, and

Claims (1)

the appended claims are intended to cover all such modifications, improvements and other embodiments as fall within the scope of the present invention. Therefore, to the maximum extent permitted by law, the scope of this invention shall be determined by the broadest permissible interpretation of the following claims and their equivalents and shall not be limited to the foregoing detailed description. Flattening of the side surface of a sheet of monocrystalline material: lush 3 Study of the side surface of a sheet to identify the reference plane. 0105 material for matching the side surface of the sheet with the reference! PLANE Removal of the surface PR from the initial first external main surface and from the initial second external main surface 1, no Ш! Study of the initial first external OB of the main surface Go by removing material from the indicated initial first external in the main surface to establish the modified first y, external main surface, shk , and Study of the initial elastic external still main surface and removal of material from the specified initial second external 45 main surface for formation of the modified second external main surface of the sun and ry Cutting a sheet for removing a disk / Fig. 1 Flattening of the side surface of a sheet of single crystal material Study of the side surface of a sheet of single crystal material 203 to identify the reference plane Removal of material from the side surface of a sheet of single crystal material | 205 material for comparing the side surface of the sheet with the reference plane. Removal of the surface layer from the initial first outer 207 main surface and from the initial second outer main and , surface. , sh- C, | т у20в Cutting the sheet to remove the disk Study of the initial first outer main and 2nd surfaces of the disk about issuing material from the indicated initial feather of the outer 13 main surface to install the modified first, outer main surface "Study of the initial second outer main 1 more FLOOR DNA 000 days "removal of material from the specified random second outer 217 main surface to install the modified second. OVERALL BASIC SEWING Fig. 2 it ZY re ef v chav os ZO SYA with E Fig. ZA h 5" a 315 -" (5 5, an SO 7 Fig. ZV t "Z y Fig. ZS a" in question 303 Fig. ЗО 402 в 4 403 - я -ча и и и я: Zk 405 406 - чо И "Fig. 4А ve: wound; Sho - 401 -ФТТт у iz essnevskkh pІІІІІ 402 Shegya she Fig. 48. 409 Uh 2 40 i 403 -402 Fig. 4C in E 401 and 403 48-17 | -402 Fig. 40 ra ry and nn OV "08: Der - 402 Fig. 4E schy 7408 m s What i A i 3-7 i x -410 Fig. AE () i--n-- PLOSHYNVO S -503 Fig. 5 g; E vo shNk bo3 i- / uv s-g ? Z ket a j Va o bl u sk - 509 60? Fig, bA with I in - 505 and Axis 807 603. B i pn ya wa -u t Shi peky Do o 813 Fig. 68