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UA26952C2 - Grown single crystal ingot processing method - Google Patents

Grown single crystal ingot processing method

Info

Publication number
UA26952C2
UA26952C2 UA99073925A UA99073925A UA26952C2 UA 26952 C2 UA26952 C2 UA 26952C2 UA 99073925 A UA99073925 A UA 99073925A UA 99073925 A UA99073925 A UA 99073925A UA 26952 C2 UA26952 C2 UA 26952C2
Authority
UA
Ukraine
Prior art keywords
single crystal
ingot
processing method
crystal ingot
grown single
Prior art date
Application number
UA99073925A
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Сергій Борисович Берінгов
Сергей Борисович Берингов
Юрій Володимирович Ушанкін
Юрий Владимирович Ушанкин
Юрій Григорович Шульга
Юрий Григорьевич Шульга
Original Assignee
Закрите Акціонерне Товариство "Піллар"
Закрытое Акционерное Общество "Пиллар"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Закрите Акціонерне Товариство "Піллар", Закрытое Акционерное Общество "Пиллар" filed Critical Закрите Акціонерне Товариство "Піллар"
Priority to UA99073925A priority Critical patent/UA26952C2/en
Publication of UA26952C2 publication Critical patent/UA26952C2/en
Priority to RU2000102095A priority patent/RU2186887C2/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to the grown ingot silicon single crystal processing methods and can be used at manufacturing silicon wafer single crystals of solar cell photovoltaic modules. The grown ingot silicon single crystal processing method includes ingot calibration, determination of surfaces by ingot crystallography with the following ingot pseudosquaring.
UA99073925A 1999-07-09 1999-07-09 Grown single crystal ingot processing method UA26952C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
UA99073925A UA26952C2 (en) 1999-07-09 1999-07-09 Grown single crystal ingot processing method
RU2000102095A RU2186887C2 (en) 1999-07-09 2000-01-31 Method of treatment of grown ingots of silicon single- crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UA99073925A UA26952C2 (en) 1999-07-09 1999-07-09 Grown single crystal ingot processing method

Publications (1)

Publication Number Publication Date
UA26952C2 true UA26952C2 (en) 1999-12-29

Family

ID=21689379

Family Applications (1)

Application Number Title Priority Date Filing Date
UA99073925A UA26952C2 (en) 1999-07-09 1999-07-09 Grown single crystal ingot processing method

Country Status (2)

Country Link
RU (1) RU2186887C2 (en)
UA (1) UA26952C2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2337429C2 (en) * 2005-12-20 2008-10-27 Институт кристаллографии имени А.В. Шубникова Российской академии Наук Method of semi-conductor and optical materials plates manufacture
RU2308556C1 (en) * 2005-12-28 2007-10-20 Открытое акционерное общество "Подольский химико-металлургический завод" Method for producing monocrystalline silicon chips
CN102814866B (en) * 2012-08-31 2014-10-29 北京京运通科技股份有限公司 Quasi-monocrystal silicon ingot cutting method and silicon wafer manufacturing method
RU2682564C1 (en) * 2018-04-09 2019-03-19 Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" (УрФУ) Semiconductor material ingot calibration method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007204A (en) * 1988-09-16 1991-04-16 Shin-Etsu Handotai Company Limited Apparatus for shaping ingots into right circular cylindrical form
RU2036985C1 (en) * 1992-02-12 1995-06-09 Московский авиационный технологический институт им.К.Э.Циолковского Monocrystal treatment method

Also Published As

Publication number Publication date
RU2186887C2 (en) 2002-08-10

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