UA16735A1 - Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку - Google Patents
Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhкуInfo
- Publication number
- UA16735A1 UA16735A1 UA4710781A UA4710781A UA16735A1 UA 16735 A1 UA16735 A1 UA 16735A1 UA 4710781 A UA4710781 A UA 4710781A UA 4710781 A UA4710781 A UA 4710781A UA 16735 A1 UA16735 A1 UA 16735A1
- Authority
- UA
- Ukraine
- Prior art keywords
- treatment
- crystal elements
- zinc selenide
- based crystal
- carried out
- Prior art date
Links
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 title abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Винахід належить до області одержання напівпровідникових матеріалів. Обробку кристалічних елементів проводять шляхом їх витримки при нагріванні в газовій атмосфері. Обробку ведуть при 1000-1080 °С в середовищі порошкоподібного селеніду цинку в потоці водню протягом 3-10 год.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UA4710781A UA16735A1 (uk) | 1989-06-27 | 1989-06-27 | Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UA4710781A UA16735A1 (uk) | 1989-06-27 | 1989-06-27 | Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA16735A1 true UA16735A1 (uk) | 1997-08-29 |
Family
ID=74558241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UA4710781A UA16735A1 (uk) | 1989-06-27 | 1989-06-27 | Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку |
Country Status (1)
| Country | Link |
|---|---|
| UA (1) | UA16735A1 (uk) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD680878S1 (en) | 2011-12-14 | 2013-04-30 | Thomas C. Ford | Combined fragrance bottle and cap |
| USD681461S1 (en) | 2011-12-14 | 2013-05-07 | Thomas C. Ford | Cap for a fragrance bottle |
| USD689774S1 (en) | 2011-12-14 | 2013-09-17 | Thomas C. Ford | Fragrance bottle |
| USD691890S1 (en) | 2011-12-14 | 2013-10-22 | Thomas C. Ford | Fragrance bottle |
-
1989
- 1989-06-27 UA UA4710781A patent/UA16735A1/uk unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD680878S1 (en) | 2011-12-14 | 2013-04-30 | Thomas C. Ford | Combined fragrance bottle and cap |
| USD681461S1 (en) | 2011-12-14 | 2013-05-07 | Thomas C. Ford | Cap for a fragrance bottle |
| USD689774S1 (en) | 2011-12-14 | 2013-09-17 | Thomas C. Ford | Fragrance bottle |
| USD691890S1 (en) | 2011-12-14 | 2013-10-22 | Thomas C. Ford | Fragrance bottle |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE76631T1 (de) | Erneut gesintertes, borreiches, polykristallines, kubisches bornitrid und verfahren zu dessen herstellung. | |
| NZ219347A (en) | Apparatus and method for mist cultivation of cells | |
| JPS57135796A (en) | Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method | |
| UA16735A1 (uk) | Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку | |
| EP0105463A3 (en) | Silicon article and method of manufacturing the same | |
| HU9600504D0 (en) | Method of production of transgenic plants wholly transformed into to generation, from meristems | |
| ATE253108T1 (de) | Gekapselte/luftfreie schrotung und maischeerzeugung | |
| ES8608032A1 (es) | Procedimiento para la utilizacion del gas de pirolisis e instalacion perfeccionada para la puesta en practica del procedimiento | |
| EP0252279A3 (en) | Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon | |
| NO953464L (no) | Fremgangsmåte for fremstilling av et substramateriale for solceller | |
| JPS52155603A (en) | Loquefaction of polymer waste | |
| ZA831909B (en) | Process for the production of silicon,in particular for use in the manufacture of solar cells | |
| JPS5542267A (en) | Production of high purity glass | |
| EP0134536A3 (en) | Process for obtaining and multiplying virus genones and their derivatives | |
| EP0355833A3 (en) | Method of producing compound semiconductor single crystal | |
| ZA887848B (en) | Method for introducing and bonding gas into water,apparatus for carrying out the method and water produced by the method | |
| JPS5632304A (en) | Metal oxide film forming method | |
| EP0366276A3 (en) | Method for forming crystal | |
| JPS6412524A (en) | Vertical type diffusion cvd device | |
| JPS5244166A (en) | Method of growing semiconductor | |
| JPS576195A (en) | Manufacturing method of vacuume structure | |
| SU1297523A1 (ru) | Способ получения эпитаксиальных слоев твердых растворов (sic)*001*00-*00x(aln)*00x | |
| JPS56134508A (en) | Synthetic method of diamond | |
| JPS5216989A (en) | Process of semiconductor thin film | |
| JPS6487598A (en) | Treatment of raw material for compound semiconductor polycrystal |