TWM619170U - Probe structure - Google Patents
Probe structure Download PDFInfo
- Publication number
- TWM619170U TWM619170U TW110208181U TW110208181U TWM619170U TW M619170 U TWM619170 U TW M619170U TW 110208181 U TW110208181 U TW 110208181U TW 110208181 U TW110208181 U TW 110208181U TW M619170 U TWM619170 U TW M619170U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- probe structure
- contact section
- structure according
- probe
- Prior art date
Links
- 239000000523 sample Substances 0.000 title claims abstract description 139
- 239000010410 layer Substances 0.000 claims abstract description 102
- 239000002346 layers by function Substances 0.000 claims abstract description 83
- 239000011247 coating layer Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical group [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims description 2
- OVMJQLNJCSIJCH-UHFFFAOYSA-N azanylidyneneodymium Chemical compound [Nd]#N OVMJQLNJCSIJCH-UHFFFAOYSA-N 0.000 claims description 2
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009530 blood pressure measurement Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- -1 hafnium nitride Chemical class 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical group [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
Landscapes
- Measuring Leads Or Probes (AREA)
Abstract
本創作公開一種探針結構,其包括探針本體與功能層。探針本體包括中央段、第一接觸段與第二接觸段,第一接觸段連接於中央段的其中一端,第二接觸段相對於第一接觸段連接於中央段的另一端。功能層設置於第一接觸段或第二接觸段的至少其一上,且包括附著層及外披覆層,外披覆層的至少一部分覆蓋於附著層上。本創作的探針結構能夠提升探針的耐用性,以延長探針的使用壽命。This creation discloses a probe structure, which includes a probe body and a functional layer. The probe body includes a central section, a first contact section and a second contact section. The first contact section is connected to one end of the central section, and the second contact section is connected to the other end of the central section relative to the first contact section. The functional layer is disposed on at least one of the first contact section or the second contact section, and includes an adhesion layer and an outer coating layer, and at least a part of the outer coating layer covers the adhesion layer. The probe structure of this creation can improve the durability of the probe to extend the service life of the probe.
Description
本創作涉及一種探針結構,特別是涉及一種用於積體電路測試的探針結構。The present creation relates to a probe structure, in particular to a probe structure for integrated circuit testing.
為了避免將不良品繼續封裝而增加不必要的成本,在封裝之前,一般會使用探針卡對晶圓(Wafer)上未切割之晶粒(Die)進行功能性測試,以預先篩選出不良品。具體而言,探針卡包含多個金屬探針。當測試時,會將每個金屬探針的其中一端抵接於待測晶圓上的錫球,另一端耦接於測試儀器,從而使待測晶圓的晶粒(元件)與測試儀器電性連接。測試儀器接收信號並依據所測量的信號分析待測晶圓品質,而篩選出不良品。In order to avoid unnecessary cost increase due to the continued packaging of defective products, probe cards are generally used to perform functional tests on the uncut die on the wafer before packaging, so as to pre-screen the defective products . Specifically, the probe card contains a plurality of metal probes. When testing, one end of each metal probe is abutted against the solder ball on the wafer to be tested, and the other end is coupled to the testing instrument, so that the die (component) of the wafer to be tested is electrically connected to the testing instrument. Sexual connection. The test instrument receives the signal and analyzes the quality of the wafer to be tested based on the measured signal, and screens out defective products.
現有的金屬探針以銅(Cu)作為基材,並在基材外表面鍍上金(Au)層,以使金屬探針具有較佳的導電性。但是如何通過結構設計的改良,來提升探針的耐用性,以延長探針的使用壽命,仍為該項事業所欲解決的重要課題之一。Existing metal probes use copper (Cu) as a substrate, and a gold (Au) layer is plated on the outer surface of the substrate, so that the metal probe has better conductivity. However, how to improve the durability of the probe and extend the service life of the probe through the improvement of the structural design is still one of the important issues to be solved by this business.
本創作所要解決的技術問題在於,針對現有技術的不足提供一種探針結構,以提升探針結構的耐用性,並延長探針結構的壽命。The technical problem to be solved by this creation is to provide a probe structure in response to the shortcomings of the prior art, so as to improve the durability of the probe structure and extend the life of the probe structure.
為了解決上述的技術問題,本創作提供一種探針結構,其包括一探針本體與一功能層。探針本體包括一中央段、一第一接觸段與一第二接觸段。第一接觸段連接於中央段的其中一端,第二接觸段相對於第一接觸段連接於中央段的另一端。功能層設置於第一接觸段或第二接觸段的至少其一上。功能層包括一附著層及一外披覆層,外披覆層的至少一部分覆蓋於附著層上。In order to solve the above technical problems, the author provides a probe structure, which includes a probe body and a functional layer. The probe body includes a central section, a first contact section and a second contact section. The first contact section is connected to one end of the central section, and the second contact section is connected to the other end of the central section relative to the first contact section. The functional layer is disposed on at least one of the first contact section or the second contact section. The functional layer includes an adhesion layer and an outer covering layer, and at least a part of the outer covering layer covers the adhesion layer.
本創作的其中一有益效果在於,本創作所提供的探針結構,其能通過“功能層包括一附著層及一外披覆層”以及“功能層設置於第一接觸段或第二接觸段的至少其一上”的技術方案,以提升功能層在探針本體的附著力,進而增加探針結構的耐用性與延長探針結構的壽命。One of the beneficial effects of this creation is that the probe structure provided by this creation can pass through "the functional layer includes an adhesion layer and an outer covering layer" and "the functional layer is arranged in the first contact section or the second contact section" "At least one of the above" technical solutions to improve the adhesion of the functional layer to the probe body, thereby increasing the durability of the probe structure and prolonging the life of the probe structure.
為使能更進一步瞭解本創作的特徵及技術內容,請參閱以下有關本創作的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本創作加以限制。In order to further understand the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation. However, the drawings provided are only for reference and explanation, and are not used to limit this creation.
以下是通過特定的具體實施例來說明本創作所公開有關“探針結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本創作的優點與效果。本創作可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本創作的構思下進行各種修改與變更。另外,本創作的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本創作的相關技術內容,但所公開的內容並非用以限制本創作的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following is a specific embodiment to illustrate the implementation of the "probe structure" disclosed in this creation, and those skilled in the art can understand the advantages and effects of this creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings of this creation are merely schematic illustrations, and are not depicted in actual size, and are stated in advance. The following implementations will further describe the related technical content of this creation in detail, but the disclosed content is not intended to limit the scope of protection of this creation. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.
[第一實施例][First Embodiment]
參閱圖1至圖3所示,本創作第一實施例提供一種探針結構P,其包括探針本體1與功能層2。本創作所提供的探針結構P可被裝設在探針卡(圖未示)上,以對待測物(如:晶圓)進行測試。詳細而言,本實施例的探針結構P可以是眼鏡蛇探針(cobra pin)、懸臂式探針(cantilever pin)、微立方體探針(micro cube pin)、無管探針(tubeless pin)、VI探針(VI probe pin)、彈簧探針(pogo pin)或 微機電探針(MEMS pin)等等,本創作並不限制。在圖1所繪示的探針結構P僅作為一示範例來說明本創作,並非用以作為限制。在本創作的探針結構P中,探針本體1可包括中央段11與分別連接在中央段11兩相反端的第一接觸段12以及第二接觸段13。換言之,第一接觸段12與第二接觸段13分別由中央段11的兩相反端朝相反方向延伸。詳細而言,第一接觸段12設置在中央段11的其中一端,第二接觸段13相對於第一接觸段12連接於中央段11的另一端。Referring to FIG. 1 to FIG. 3, the first embodiment of the present creation provides a probe structure P, which includes a
實際使用時,可將多個探針結構P固定在探針卡上,使每個探針結構P的第一接觸段12可以用於接觸待測物表面的接點,第二接觸段13可用於連接一轉接載板上的接點,但本創作並不以此為限。在本創作實施例中,第一接觸段12的末端的直徑是沿著遠離中央段11的方向漸縮而形成尖端,但本創作不以此為限。在另一實施例中,第一接觸段12也可以具有扁平狀的接觸端。在又另一實施例中,第一接觸段12的直徑也可以沿著探針本體1的長軸方向保持一致。In actual use, multiple probe structures P can be fixed on the probe card, so that the
此外,中央段11的長度可以大於第一接觸段12以及第二接觸段13的長度,第一接觸段12的長度可以等於第二接觸段13的長度。舉例來說,中央段11的長度可以是探針本體1總長度的40%至60%。另外,第一接觸段12的長度可以是探針本體1總長度的20%至40%,且第二接觸段13的長度可以是探針本體1總長度的20%至40%。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本創作。In addition, the length of the central section 11 may be greater than the lengths of the
如圖2所示,在本實施例中,探針本體1的截面形狀可為圓形。然而,探針本體1的截面形狀也可以是橢圓形、三邊形、四邊形或等其他幾何形狀,本創作並不以此為限。另外,在本實施例中,中央段11的截面形狀與第一接觸段11(或者第二接觸段12)的截面形狀相同,但本創作並不限制。As shown in FIG. 2, in this embodiment, the cross-sectional shape of the
在實際應用時,同一個探針結構P可能需要被反覆使用,以對批量的待測物進行檢測。因此,本實施例的探針結構P還進一步地包括功能層2,可增加探針結構P的耐用性、耐磨性以及抗沾黏性。詳細而言,功能層2包覆探針本體1的第一接觸段12與第二接觸段13的至少其中一者。在本實施例中,功能層2是包覆在探針本體1的第一接觸段12上。在其他實施例中,功能層2也可以包覆在探針本體1的第二接觸段13上。In practical applications, the same probe structure P may need to be used repeatedly to detect bulk test objects. Therefore, the probe structure P of this embodiment further includes a
請參照圖2以及圖3,在本實施例中,功能層2包括附著層21與外披覆層22。附著層21可提升功能層2對探針本體1的附著性,而外披覆層22可以提升探針結構P的耐磨性以及抗沾黏性。Please refer to FIG. 2 and FIG. 3. In this embodiment, the
詳言之,功能層2設置在第一接觸段12或第二接觸段13上。當探針結構P接觸待測物表面或轉接載板的接點並進行量測之後,需要將探針結構P與待測物或轉接載板的接點分離。在將探針結構P與待測物或轉接載板的接點分離時,功能層2會受到較大的外力。因此,在本創作的一實施例中,功能層2還包括直接與探針本體1接觸的附著層21,藉以提升功能層2與探針本體1之間的附著性。如此,在對大量的待測物進行檢測之後,功能層2較不容易因反覆受到外力而剝離,汙染待測物或轉接載板的接點,並影響檢測效果。此外,提升功能層2與探針本體1之間的附著性,也可提升探針結構P的耐用性。In detail, the
在一實施例中,功能層2的厚度的範圍可由10 nm至400 nm,且附著層21的厚度可以小於或等於外披覆層22的厚度。在一實施例中,附著層21的厚度範圍可由1 nm至10 nm。當附著層21的厚度小於1 nm時,不足以增加功能層2與探針本體1之間的附著性,當附著層21的厚度大於10 nm時,可能會增加附著層21的製造成本。In an embodiment, the thickness of the
另外,在較佳實施例中,外披覆層22的厚度範圍可由10 nm至400 nm,較佳為10 nm至200 nm。進一步而言,當外披覆層22的厚度小於10 nm時,難以顯著提升功能層2的耐磨性與與抗沾黏性。當外披覆層22的厚度大於400 nm時,容易使電阻上升,影響探針結構P的測試性能。In addition, in a preferred embodiment, the thickness of the
另外,附著層21的材料可以選擇低電阻(高導電性)的材料,例如:金屬。在一實施例中,附著層21的材料可以選自由鋯(Zr)、鈦(Ti)、銀(Ag)、金(Au)、鈀(Pd)、鉑(Pt)、鎳(Ni)、銅(Cu)、鉻(Cr)、鉬(Mo)、鎢(W)、釩(V)、鈮(Nb)、鉭(Ta)、鐵(Fe)、鈷(Co)、釕(Ru)、銠(Rh)、銥(Ir)及其任意組合所組成的群組。In addition, the material of the
須說明的是,在利用探針結構P對待測物(如:晶圓)進行檢測時,會以探針結構P的第一接觸段12劃破與其電性接觸之接點(如:錫球)表面的氧化層。因此,設置於第一接觸段12上的功能層2會受到摩擦力而被磨損。隨著測試次數增加,功能層2磨耗的程度越嚴重。因此,在本創作中,功能層2的外披覆層22的材料可以選擇低電阻且硬度較高的材料,以增加探針結構P的耐磨性,並延長探針結構P的使用壽命。It should be noted that when the probe structure P is used to detect the object to be tested (such as a wafer), the
此外,在利用現有的探針進行檢測時,探針會因通電而產生熱能,導致錫球可能被局部熔融,沾黏到探針上。若繼續以被沾黏的探針對另一待測物進行檢測時,可能會因探針被沾黏而使檢測數值產生誤差。In addition, when the existing probes are used for detection, the probes will generate heat due to energization, which may cause the solder balls to be partially melted and stick to the probes. If you continue to use the stuck probe to detect another object to be tested, the probe may be stuck, which may cause errors in the detection value.
因此,在本創作中,功能層2的外披覆層22的材料除了選擇具有低電阻及硬度較高的之外,還可進一步選擇可抗沾黏的材料,以避免降低量測的準確度。在一實施例中,外披覆層22的材料可至少包括金屬氮化物。舉例而言,外披覆層22的材料可以選自由氮化鋯(ZrN)、氮化鈦(TiN)、氮化釔(YN)、氮化鉿(HfN)、氮化鑭(LaN)、氮化釹(NdN)及其任意組合所組成的群組。Therefore, in this creation, in addition to choosing the material of the
在本創作一實施例中,附著層21與外披覆層22都可以通過濺鍍製程而形成於探針本體1的外表面上,但本創作不以此為限。在一實施例中,附著層21與外披覆層22的材料具有相同的金屬元素。舉例而言,當附著層21的材料為鋯時,外披覆層22的材料可以是氮化鋯。In an embodiment of the invention, both the
在利用濺鍍製程來製作功能層2時,可以在不更換靶材的情況下,在探針本體1上形成附著層21與外披覆層22,以避免在附著層21與外披覆層22之間形成氧化物。舉例來說,在探針本體1形成附著層21之後,可以直接於濺鍍腔體內通入氮氣,以使金屬原子與反應氣體進行氮化反應,而在附著層21上形成外披覆層22。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本創作。When the
本創作的一實施例中,先將附著層21覆蓋於第一接觸段12上,再形成外披覆層22覆蓋於附著層21上。整體而言,功能層2不僅可以使探針結構P具有低電阻,且對於探針本體1具有較高的附著力,而可增加探針結構P的耐用性。另外,功能層2還可增加探針結構P的硬度與抗沾黏性。In an embodiment of the present invention, the
[第二實施例][Second Embodiment]
圖4為本創作第二實施例的探針結構P的局部放大示意圖。第二實施例與第一實施例相同的元件具有相同的標號,且相同的部分不再敘述。FIG. 4 is a partial enlarged schematic diagram of the probe structure P according to the second embodiment of the creation. The same elements in the second embodiment and the first embodiment have the same reference numerals, and the same parts are not described again.
如圖4所示,功能層2可以設置在第一接觸段12或第二接觸段13上。另外,在本實施例的功能層2中,附著層21並未完全被外披覆層22覆蓋。進一步而言,在本實施例中,附著層21直接形成於探針本體1的第一接觸段12或第二接觸段13,而外披覆層22部分地覆蓋附著層21的外表面。As shown in FIG. 4, the
舉例而言,外披覆層22可以覆蓋附著層21總表面積的40%至60%。具體而言,外披覆層22可以覆蓋在設置於第一接觸段12末端的附著層21上。然而,只要在第一接觸段12上用於接觸待測物的接點的區域,形成具有附著層21與外披覆層22的雙層結構,本創作並不以此例為限。For example, the
據此,在本實施例中,功能層2的不同區域的厚度可以不一致。詳言之,由於外披覆層22只有形成在第一接觸段12或第二接觸段13末端的附著層21上,因此,功能層2在較遠離中央段11之部分的厚度大於較靠近中央段11的部分的厚度。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本創作。Accordingly, in this embodiment, the thickness of different regions of the
[第三實施例][Third Embodiment]
圖5為本創作第三實施例的探針結構P的局部放大示意圖。第三實施例與第一實施例相同的元件具有相同的標號,且相同的部分不再敘述。FIG. 5 is a partial enlarged schematic diagram of the probe structure P according to the third embodiment of the creation. The same elements in the third embodiment and the first embodiment have the same reference numerals, and the same parts will not be described again.
功能層2可以設置在第一接觸段12或第二接觸段13上。如圖5所示,功能層2包括附著層21與外披覆層22。在本實施例中,外披覆層22除了完全覆蓋附著層21之外,有一部份外披覆層22會覆蓋在探針本體1的外表面。也就是說,外披覆層22的總表面積大於附著層21的總表面積,使外披覆層22的其中一部份覆蓋附著層21,而外披覆層22的另一部分直接覆蓋於第一接觸段12。在本實施例中,外披覆層22的總表面積約為附著層21的總表面積的1.2至2倍。此外,附著層21可設置在第一接觸段12或者第二接觸段13的末端上,使探針結構P在接觸待測物的接點的區域具有附著層21與外披覆層22的雙層結構。The
在本實施例中,功能層2在不同區域可具有相同的厚度,但外披覆層22在不同的區域具有不同的厚度。具體而言,包覆於附著層21的一部分外披覆層22的厚度小於未包覆附著層21但直接接觸第一接觸段12之另一部分外披覆層22的厚度。換言之,外披覆層22在第一接觸段12末端(較遠離中央段11)的厚度大於外披覆層22在第一接觸段12外表面(較靠近中央段11)的厚度。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本創作。In this embodiment, the
[第四實施例][Fourth Embodiment]
圖6為本創作第四實施例的探針結構P的縱向剖面示意圖。第四實施例與第一實施例相同的元件具有相同的標號,且相同的部分將不再贅述。FIG. 6 is a schematic longitudinal cross-sectional view of the probe structure P according to the fourth embodiment of the creation. The same elements in the fourth embodiment and the first embodiment have the same reference numerals, and the same parts will not be repeated.
在本實施例中,功能層2可以形成在探針本體1的第一接觸段12與第二接觸段13上。具體而言,功能層2的附著層21與外披覆層22會形成在第一接觸段12與第二接觸段13的末端,以使探針結構P的兩端部皆具有耐磨性與抗沾黏性。In this embodiment, the
當利用探針結構P對待測物(如:晶圓)進行檢測時,可以減少探針結構P與待測物的接點以及轉接載板的接點接觸造成的損耗。因此,相較於功能層2僅設置在第一接觸段12或第二接觸段13的實施例而言,本實施例的探針結構P具有更高的耐用性。When the probe structure P is used to detect the object to be measured (such as a wafer), the loss caused by the contact of the probe structure P and the contact of the object to be measured and the contact of the transfer carrier board can be reduced. Therefore, compared with the embodiment in which the
值得一提的是,既然功能層2是形成在第一接觸段12與第二接觸段13的至少其中一者上,而第一接觸段12與第二接觸段13又是用以分別電性接觸待測物的接點與轉接載板上的接點,功能層2的電阻值不能太高,以避免影響對待測物的電性測試。進一步地,以霍爾量測儀(Hall effect analyzer)量測本創作功能層2的表面電阻,再將表面電阻乘以厚度以得到總電阻率。本創作實施例的功能層2的總電阻率範圍由20x10
-6ohm.cm至80x10
-6ohm.cm。
It is worth mentioning that since the
為了進一步說明本創作之附著層22對於功能層2之附著性的影響,以奈米壓痕/刮痕儀進行刮測來測試功能層2的附著性。實驗方法是將已具有膜層的試片固定於奈米壓痕/刮痕儀上,再以鑽石刮針在已具有膜層的試片上逐漸增加荷重來進行刮測,荷重範圍是由300到400 mN。以膜層破裂時的刮痕深度來推算膜層的臨界負載。臨界負載越大代表該膜層的附著力越強。本創作實施例所提供的功能層2的臨界負載範圍可由100 mN至300 mN。In order to further illustrate the influence of the
請參照下表1,分別以比較例與本創作實施例的功能層2來進行上述測試。比較例與實施例的功能層總厚度皆為100 nm,但比較例的膜層不具有附著層,而實施例的功能層是包含10 nm的附著層與90 nm的外披覆層。進一步而言,比較例沒有附著層,僅具有氮化鋯層,而實施例的功能層包含附著層與外披覆層,其中附著層的材料為鋯,外披覆層的材料為氮化鋯。實驗結果顯示於表1。Please refer to Table 1 below to perform the above tests with the
表1(單位:mN)
根據表1的結果,在比較例(無附著層)中,不同測試點所測得的平均臨界負載為172.32 mN。在實施例(包含附著層與外披覆層)中,不同測試點所測得的臨界負載至少200 mN。進一步而言,本實施例的功能層在不同測試點的臨界負載範圍可由220 mN至300 mN。具體而言,本實施例的功能層的不同測試點所得到的平均臨界負載為254.49 mN。表1的實驗結果證明附著層21確實可以增加探針本體1與功能層2之間的附著力,可避免功能層2隨著檢測次數的增加而逐漸由探針本體1剝離,而能夠增加探針結構P的耐用性。此外,避免功能層2剝離,也可避免影響檢測的準確性。According to the results in Table 1, in the comparative example (without adhesion layer), the average critical load measured at different test points is 172.32 mN. In the embodiment (including the adhesion layer and the outer coating layer), the critical load measured at different test points is at least 200 mN. Furthermore, the critical load range of the functional layer of this embodiment at different test points can be 220 mN to 300 mN. Specifically, the average critical load obtained by different test points of the functional layer of this embodiment is 254.49 mN. The experimental results in Table 1 prove that the
另外,以奈米壓痕/刮痕儀同樣對前述比較例與實施例進行壓測。測試方法是將具有膜層的試片固定於奈米壓痕/刮痕儀上,再使用奈米鑽石壓頭對具有功能層的試片的不同測試點施加0.0001 mN至0.1 mN的荷重,最大負載維持時間為63秒,於不同測試點所測得的硬度的平均值。在本創作實施例中,功能層2的平均硬度範圍是由26 GPa至32 GPa。實驗結果顯示於表2。In addition, a nanoindenter/scratch meter was also used to perform pressure measurement on the aforementioned comparative examples and examples. The test method is to fix the test piece with the film layer on the nanoindenter/scratch tester, and then use the nano-diamond indenter to apply a load of 0.0001 mN to 0.1 mN to the different test points of the test piece with the functional layer. The load holding time is 63 seconds, and the average value of the hardness measured at different test points. In this creative embodiment, the average hardness of the
表2(單位:GPa)
根據表2的結果,本實施例的功能層的硬度也高於比較例的膜層。進一步而言,比較例的膜層的平均硬度為23.34 GPa,而本實施例的功能層的平均硬度達到26.00 GPa。據此,本創作實施例的功能層2確實具有較高的硬度,可以提升探針結構P的耐磨性。此外,本創作實施例的功能層2的磨耗速度也較低,可增加探針結構P的使用壽命。According to the results of Table 2, the hardness of the functional layer of this example is also higher than that of the film layer of the comparative example. Furthermore, the average hardness of the film layer of the comparative example was 23.34 GPa, while the average hardness of the functional layer of this example reached 26.00 GPa. Accordingly, the
另外,將去離子水滴在具有功能層的試片上,並使用水滴接觸角量測儀來量測本創作實施例的功能層2上的液滴的水滴接觸角。水滴接觸角指的是液體/氣體界面與固體(功能層2)表面接觸所形成的夾角。水滴接觸角的數值越大代表表面能越小,也就是液滴所接觸的表面疏水性越高,而具有較佳的抗沾黏性。一般而言,若是表面為疏水,則水滴接觸角將大於90°。經過實際測試,在本實施例中,液滴在功能層2的表面上所形成的水滴接觸角可以大於或等於100°。在一實施例中,液滴在功能層2上的水滴接觸角可為108.82°。因此,本創作的功能層2可以提升探針結構P的抗沾黏性,以避免在測試過程中因受熱而局部熔融的錫沾黏到探針結構P上,而影響後續另一待測物的測試準確性。此外,提升探針結構P的抗沾黏性,也可以減少清潔探針結構P的頻率。In addition, deionized water is dropped on a test piece with a functional layer, and a water drop contact angle measuring instrument is used to measure the water drop contact angle of the drop on the
基於上述,本創作實施例所提供的功能層2不僅具有較低的電阻而可使探針結構P符合用來進行封測的要求,也可使探針結構P具有較高的耐磨性與抗沾黏性,進而達到提升量測效率與延長探針結構P使用壽命之功效。Based on the above, the
[實施例的有益效果][Beneficial effects of the embodiment]
本創作的其中一有益效果在於,本創作所提供的探針結構P,其能通過“功能層2包括一附著層21及一外披覆層22”以及“功能層2設置於第一接觸段12或第二接觸段13的至少其一上”的技術方案,以提升功能層附著在探針本體的附著效果,增加探針結構的耐用性。One of the beneficial effects of this creation is that the probe structure P provided by this creation can pass through "the
更進一步來說,在本創作的一實施例中,通過濺鍍製程,可在探針本體1上形成附著層21與外披覆層22,以形成功能層2。本創作所提供的外披覆層22可提升探針結構P的抗沾黏性與耐磨性,而在探針本體1與外披覆層22之間的附著層21,能夠提升探針本體1與功能層2之間的附著性,並使探針結構P具有較低的電阻。因此,本創作的探針結構P可以具有更佳的耐用性,減少清潔或更換探針結構P的頻率,進而提升產能稼動率。Furthermore, in an embodiment of the present invention, an
以上所公開的內容僅為本創作的優選可行實施例,並非因此侷限本創作的申請專利範圍,所以凡是運用本創作說明書及圖式內容所做的等效技術變化,均包含於本創作的申請專利範圍內。The content disclosed above is only a preferred and feasible embodiment of this creation, and does not limit the scope of patent application for this creation. Therefore, all equivalent technical changes made using this creation specification and schematic content are included in the application for this creation. Within the scope of the patent.
P:探針結構 1:探針本體 11:中央段 12:第一接觸段 13:第二接觸段 2:功能層 21:附著層 22:外披覆層 P: Probe structure 1: Probe body 11: Central section 12: The first contact segment 13: The second contact section 2: Functional layer 21: Adhesion layer 22: Outer cladding layer
圖1為本創作第一實施例的探針結構的縱向剖面示意圖。FIG. 1 is a schematic longitudinal cross-sectional view of the probe structure of the first embodiment of the creation.
圖2為本創作第一實施例的探針結構沿著圖1的線II-II的剖面示意圖。FIG. 2 is a schematic cross-sectional view of the probe structure of the first embodiment of the creation along the line II-II in FIG. 1.
圖3為本創作第一實施例的探針結構在圖1的區域III的局部放大示意圖。FIG. 3 is a partial enlarged schematic diagram of the probe structure of the first embodiment of the creation in the area III of FIG. 1.
圖4為本創作第二實施例的探針結構的局部放大示意圖。Fig. 4 is a partial enlarged schematic diagram of the probe structure of the second embodiment of the creation.
圖5為本創作第三實施例的探針結構的局部放大示意圖。FIG. 5 is a partial enlarged schematic diagram of the probe structure of the third embodiment of the creation.
圖6為本創作第四實施例的探針結構的縱向剖面示意圖。FIG. 6 is a schematic longitudinal cross-sectional view of the probe structure of the fourth embodiment of the creation.
P:探針結構 P: Probe structure
1:探針本體 1: Probe body
11:中央段 11: Central section
12:第一接觸段 12: The first contact segment
13:第二接觸段 13: The second contact section
2:功能層 2: Functional layer
21:附著層 21: Adhesion layer
22:外披覆層 22: Outer cladding layer
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110208181U TWM619170U (en) | 2021-07-13 | 2021-07-13 | Probe structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110208181U TWM619170U (en) | 2021-07-13 | 2021-07-13 | Probe structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM619170U true TWM619170U (en) | 2021-11-01 |
Family
ID=79908238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110208181U TWM619170U (en) | 2021-07-13 | 2021-07-13 | Probe structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM619170U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116921489A (en) * | 2023-07-27 | 2023-10-24 | 湖州金钛导体技术有限公司 | A high-strength and high-toughness probe and its manufacturing method |
| TWI859700B (en) * | 2022-05-11 | 2024-10-21 | 南韓商Tse有限公司 | Method of manufacturing probe tip and probe tip manufactured by the same |
-
2021
- 2021-07-13 TW TW110208181U patent/TWM619170U/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI859700B (en) * | 2022-05-11 | 2024-10-21 | 南韓商Tse有限公司 | Method of manufacturing probe tip and probe tip manufactured by the same |
| US12210038B2 (en) | 2022-05-11 | 2025-01-28 | Tse Co., Ltd. | Method of manufacturing a probe tip and a probe tip manufactured by the same |
| CN116921489A (en) * | 2023-07-27 | 2023-10-24 | 湖州金钛导体技术有限公司 | A high-strength and high-toughness probe and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107257928B (en) | Contact probes for test heads | |
| US6939142B2 (en) | Semiconductor device testing contactor having a circuit-side contact piece and test-board-side contact piece | |
| TW567317B (en) | Conductive contactor | |
| CN102884437B (en) | Contact probe | |
| TWI574013B (en) | Probe card, probe structure and method for manufacturing the same | |
| TWM619170U (en) | Probe structure | |
| WO2003005042A1 (en) | Conductive contact | |
| WO2007146186A2 (en) | Knee probe having increased scrub motion | |
| CN110537100A (en) | Electrical connection device | |
| JP2010223852A (en) | Electrical inspection probe, method for manufacturing the same, and method for manufacturing a semiconductor device | |
| US20050162177A1 (en) | Multi-signal single beam probe | |
| US20150301081A1 (en) | Electrical contact member and inspection connection device | |
| US20090293619A1 (en) | Method and apparatus for evaluating adhesion strength of a thin film | |
| TWI777667B (en) | Probe structure | |
| KR20160028527A (en) | Electrical contact member | |
| TWI790716B (en) | Space transformer | |
| US6366105B1 (en) | Electrical test apparatus with gas purge | |
| TWM620236U (en) | Space transformer | |
| CN101294983A (en) | Structure and manufacturing method of multi-layer electric probe | |
| TW201610447A (en) | Property inspection and classification device for chip electronic components | |
| CN221124682U (en) | Improved structure of spring type probe | |
| JP2008096293A (en) | Manufacturing method of contact for inspection, contact for inspection, tool for inspection, and inspection device | |
| TWI871484B (en) | Contact probe | |
| TWM619151U (en) | Probe structure | |
| TWI332086B (en) | Multi-layer electric probe and fabricating method |